TWI798870B - 蝕刻氣體、蝕刻方法，及半導體元件之製造方法 - Google Patents

蝕刻氣體、蝕刻方法，及半導體元件之製造方法 Download PDF

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Publication number
TWI798870B
TWI798870B TW110138267A TW110138267A TWI798870B TW I798870 B TWI798870 B TW I798870B TW 110138267 A TW110138267 A TW 110138267A TW 110138267 A TW110138267 A TW 110138267A TW I798870 B TWI798870 B TW I798870B
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TW
Taiwan
Prior art keywords
etching
gas
fluorobutene
etched
silicon
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TW110138267A
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English (en)
Chinese (zh)
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TW202231612A (zh
Inventor
鈴木淳
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日商昭和電工股份有限公司
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Publication of TW202231612A publication Critical patent/TW202231612A/zh
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
TW110138267A 2020-10-15 2021-10-15 蝕刻氣體、蝕刻方法，及半導體元件之製造方法 TWI798870B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020173915 2020-10-15
JP2020-173915 2021-10-15

Publications (2)

Publication Number Publication Date
TW202231612A TW202231612A (zh) 2022-08-16
TWI798870B true TWI798870B (zh) 2023-04-11

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TW110138267A TWI798870B (zh) 2020-10-15 2021-10-15 蝕刻氣體、蝕刻方法，及半導體元件之製造方法

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Country Link
US (1) US20230386850A1 (https=)
EP (1) EP4231332A4 (https=)
JP (1) JP7786388B2 (https=)
KR (1) KR20230061542A (https=)
CN (1) CN116325089A (https=)
IL (1) IL302057A (https=)
TW (1) TWI798870B (https=)
WO (1) WO2022080268A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102919972B1 (ko) * 2022-06-21 2026-01-28 세메스 주식회사 식각 가스 조성물, 기판 처리 장치, 및 이를 이용한 패턴 형성 방법
KR102938468B1 (ko) 2022-06-21 2026-03-11 세메스 주식회사 식각 가스 조성물, 기판 처리 장치, 및 이를 이용한 패턴 형성 방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201422780A (zh) * 2012-10-30 2014-06-16 液態空氣喬治斯克勞帝方法研究開發股份有限公司 用於高縱橫比氧化物蝕刻之氟碳分子
JP2017092357A (ja) * 2015-11-16 2017-05-25 セントラル硝子株式会社 ドライエッチングガスおよびドライエッチング方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009041560A1 (ja) * 2007-09-28 2009-04-02 Zeon Corporation プラズマエッチング方法
JP2014185111A (ja) * 2013-03-25 2014-10-02 Nippon Zeon Co Ltd 高純度２，２−ジフルオロブタン
JP6788176B2 (ja) * 2015-04-06 2020-11-25 セントラル硝子株式会社 ドライエッチングガスおよびドライエッチング方法
EP3437709A4 (en) * 2016-03-30 2020-03-04 Zeon Corporation FILTER, METHOD FOR PRODUCING THE SAME, DRY-ETCHING DEVICE AND DRY-ETCHING METHOD

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201422780A (zh) * 2012-10-30 2014-06-16 液態空氣喬治斯克勞帝方法研究開發股份有限公司 用於高縱橫比氧化物蝕刻之氟碳分子
JP2017092357A (ja) * 2015-11-16 2017-05-25 セントラル硝子株式会社 ドライエッチングガスおよびドライエッチング方法

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Publication number Publication date
EP4231332A1 (en) 2023-08-23
TW202231612A (zh) 2022-08-16
KR20230061542A (ko) 2023-05-08
JPWO2022080268A1 (https=) 2022-04-21
JP7786388B2 (ja) 2025-12-16
IL302057A (en) 2023-06-01
CN116325089A (zh) 2023-06-23
WO2022080268A1 (ja) 2022-04-21
EP4231332A4 (en) 2024-11-13
US20230386850A1 (en) 2023-11-30

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