JP7786388B2 - エッチングガス、エッチング方法、及び半導体素子の製造方法 - Google Patents
エッチングガス、エッチング方法、及び半導体素子の製造方法Info
- Publication number
- JP7786388B2 JP7786388B2 JP2022556926A JP2022556926A JP7786388B2 JP 7786388 B2 JP7786388 B2 JP 7786388B2 JP 2022556926 A JP2022556926 A JP 2022556926A JP 2022556926 A JP2022556926 A JP 2022556926A JP 7786388 B2 JP7786388 B2 JP 7786388B2
- Authority
- JP
- Japan
- Prior art keywords
- etching
- gas
- fluorobutene
- etched
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
- H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
- H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
- H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
- H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
- H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
- H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
- H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020173915 | 2020-10-15 | ||
| JP2020173915 | 2020-10-15 | ||
| PCT/JP2021/037422 WO2022080268A1 (ja) | 2020-10-15 | 2021-10-08 | エッチングガス、エッチング方法、及び半導体素子の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2022080268A1 JPWO2022080268A1 (https=) | 2022-04-21 |
| JP7786388B2 true JP7786388B2 (ja) | 2025-12-16 |
Family
ID=81208185
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022556926A Active JP7786388B2 (ja) | 2020-10-15 | 2021-10-08 | エッチングガス、エッチング方法、及び半導体素子の製造方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20230386850A1 (https=) |
| EP (1) | EP4231332A4 (https=) |
| JP (1) | JP7786388B2 (https=) |
| KR (1) | KR20230061542A (https=) |
| CN (1) | CN116325089A (https=) |
| IL (1) | IL302057A (https=) |
| TW (1) | TWI798870B (https=) |
| WO (1) | WO2022080268A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102919972B1 (ko) * | 2022-06-21 | 2026-01-28 | 세메스 주식회사 | 식각 가스 조성물, 기판 처리 장치, 및 이를 이용한 패턴 형성 방법 |
| KR102938468B1 (ko) | 2022-06-21 | 2026-03-11 | 세메스 주식회사 | 식각 가스 조성물, 기판 처리 장치, 및 이를 이용한 패턴 형성 방법 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009041560A1 (ja) | 2007-09-28 | 2009-04-02 | Zeon Corporation | プラズマエッチング方法 |
| JP2014185111A (ja) | 2013-03-25 | 2014-10-02 | Nippon Zeon Co Ltd | 高純度２，２−ジフルオロブタン |
| JP2015533029A (ja) | 2012-10-30 | 2015-11-16 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | 高アスペクト比酸化物エッチング用のフルオロカーボン分子 |
| JP2017092357A (ja) | 2015-11-16 | 2017-05-25 | セントラル硝子株式会社 | ドライエッチングガスおよびドライエッチング方法 |
| WO2017169809A1 (ja) | 2016-03-30 | 2017-10-05 | 日本ゼオン株式会社 | フィルターおよびその製造方法、並びに、ドライエッチング用装置およびドライエッチング方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6788176B2 (ja) * | 2015-04-06 | 2020-11-25 | セントラル硝子株式会社 | ドライエッチングガスおよびドライエッチング方法 |
-
2021
- 2021-10-08 JP JP2022556926A patent/JP7786388B2/ja active Active
- 2021-10-08 EP EP21880007.6A patent/EP4231332A4/en active Pending
- 2021-10-08 IL IL302057A patent/IL302057A/en unknown
- 2021-10-08 KR KR1020237011836A patent/KR20230061542A/ko not_active Ceased
- 2021-10-08 CN CN202180070326.XA patent/CN116325089A/zh active Pending
- 2021-10-08 WO PCT/JP2021/037422 patent/WO2022080268A1/ja not_active Ceased
- 2021-10-08 US US18/031,816 patent/US20230386850A1/en active Pending
- 2021-10-15 TW TW110138267A patent/TWI798870B/zh active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009041560A1 (ja) | 2007-09-28 | 2009-04-02 | Zeon Corporation | プラズマエッチング方法 |
| JP2015533029A (ja) | 2012-10-30 | 2015-11-16 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | 高アスペクト比酸化物エッチング用のフルオロカーボン分子 |
| JP2014185111A (ja) | 2013-03-25 | 2014-10-02 | Nippon Zeon Co Ltd | 高純度２，２−ジフルオロブタン |
| JP2017092357A (ja) | 2015-11-16 | 2017-05-25 | セントラル硝子株式会社 | ドライエッチングガスおよびドライエッチング方法 |
| WO2017169809A1 (ja) | 2016-03-30 | 2017-10-05 | 日本ゼオン株式会社 | フィルターおよびその製造方法、並びに、ドライエッチング用装置およびドライエッチング方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP4231332A1 (en) | 2023-08-23 |
| TW202231612A (zh) | 2022-08-16 |
| KR20230061542A (ko) | 2023-05-08 |
| JPWO2022080268A1 (https=) | 2022-04-21 |
| IL302057A (en) | 2023-06-01 |
| CN116325089A (zh) | 2023-06-23 |
| WO2022080268A1 (ja) | 2022-04-21 |
| TWI798870B (zh) | 2023-04-11 |
| EP4231332A4 (en) | 2024-11-13 |
| US20230386850A1 (en) | 2023-11-30 |
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