WO2022080268A1 - エッチングガス、エッチング方法、及び半導体素子の製造方法 - Google Patents

エッチングガス、エッチング方法、及び半導体素子の製造方法 Download PDF

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Publication number
WO2022080268A1
WO2022080268A1 PCT/JP2021/037422 JP2021037422W WO2022080268A1 WO 2022080268 A1 WO2022080268 A1 WO 2022080268A1 JP 2021037422 W JP2021037422 W JP 2021037422W WO 2022080268 A1 WO2022080268 A1 WO 2022080268A1
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WO
WIPO (PCT)
Prior art keywords
etching
gas
etched
fluorobutene
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2021/037422
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English (en)
French (fr)
Japanese (ja)
Inventor
淳 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Holdings Corp
Original Assignee
Showa Denko KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko KK filed Critical Showa Denko KK
Priority to CN202180070326.XA priority Critical patent/CN116325089A/zh
Priority to IL302057A priority patent/IL302057A/en
Priority to JP2022556926A priority patent/JP7786388B2/ja
Priority to KR1020237011836A priority patent/KR20230061542A/ko
Priority to EP21880007.6A priority patent/EP4231332A4/en
Priority to US18/031,816 priority patent/US20230386850A1/en
Publication of WO2022080268A1 publication Critical patent/WO2022080268A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas

Definitions

  • the etching of the present embodiment can be achieved by either plasma etching using plasma or plasmaless etching using plasma.
  • plasma etching include reactive ion etching (RIE), inductively coupled plasma (ICP) etching, capacitively coupled plasma (CCP: Capacitive Coupled Plasma) etching, and electron etching.
  • RIE reactive ion etching
  • ICP inductively coupled plasma
  • CCP capacitively coupled plasma
  • electron etching Electron Cyclotron Resonance
  • Plasma etching microwave plasma etching can be mentioned.
  • those having a boiling point at 1 atm of 50 ° C. or lower are preferable, and those having a boiling point of 40 ° C. or lower are more preferable.
  • the boiling point at 1 atm is within the above range, when the fluorobutene gas is introduced into, for example, a plasma etching apparatus, the fluorobutene gas is difficult to liquefy inside a pipe or the like into which the fluorobutene gas is introduced. Therefore, it is possible to suppress the occurrence of troubles caused by the liquefaction of the fluorobutene gas, so that the plasma etching process can be efficiently performed.
  • the etching gas is a gas containing the above-mentioned fluorobutene.
  • the etching gas may be a gas consisting only of the above-mentioned fluorobutene or a mixed gas containing the above-mentioned fluorobutene and a diluting gas. Further, it may be a mixed gas containing the above-mentioned fluorobutene, a diluting gas and an added gas.
  • the diluting gas at least one selected from nitrogen gas (N 2 ), helium (He), neon (Ne), argon (Ar), krypton (Kr), and xenon (Xe) can be used.
  • an oxidizing gas for example, an oxidizing gas, a fluorocarbon gas, or a hydrofluorocarbon gas
  • the oxidizing gas include oxygen gas (O 2 ), ozone (O 3 ), carbon monoxide (CO), carbon dioxide (CO 2 ), nitric oxide (NO), and nitrous oxide (N 2 ). O) and nitrogen dioxide (NO 2 ) can be mentioned.
  • fluorocarbons include carbon tetrafluoride (CF 4 ), hexafluoromethane (C 2 F 6 ), and octafluoropropane (C 3 F 8 ).
  • the sum of the concentrations of copper, zinc, manganese, cobalt and silicon may be 1 mass ppb or more.
  • concentration of metal impurities such as copper, zinc, manganese, cobalt and silicon in the etching gas can be quantified by an inductively coupled plasma mass spectrometer (ICP-MS).
  • the etching selectivity tends to be high.
  • the etching selection ratio which is the ratio of the etching rate of the object to be etched containing silicon to the etching rate of the non-etched object, tends to be 10 or more.
  • the bias power constituting the potential difference between the plasma generated during etching and the member to be etched may be selected from 0 to 10000 W depending on the desired etching shape, and 0 to 1000 W when selectively etching is performed. The degree is preferable. Anisotropic etching can be performed by this potential difference.
  • the non-etching target can be used as a resist or a mask for suppressing etching of the etching target by the etching gas. Therefore, in the etching method according to the present embodiment, the patterned non-etched object is used as a resist or a mask to process the etched object into a predetermined shape (for example, the film-shaped etched object of the member to be etched). Since it can be used for a method such as (processing an object to a predetermined film thickness), it can be suitably used for manufacturing a semiconductor element. Further, since the non-etched object is hardly etched, it is possible to suppress the etching of the portion of the semiconductor element that should not be etched, and it is possible to prevent the characteristics of the semiconductor element from being lost by etching. can.
  • the non-etching object remaining after patterning can be removed by a removal method generally used in the semiconductor device manufacturing process. For example, ashing with an oxidizing gas such as oxygen plasma or ozone, or dissolution using a chemical solution such as APM (mixed solution of ammonia water and hydrogen peroxide solution), SPM (mixed solution of sulfuric acid and hydrogen peroxide solution) or organic solvent. Removal is mentioned.
  • ashing with an oxidizing gas such as oxygen plasma or ozone
  • a chemical solution such as APM (mixed solution of ammonia water and hydrogen peroxide solution), SPM (mixed solution of sulfuric acid and hydrogen peroxide solution) or organic solvent. Removal is mentioned.
  • the etching apparatus of FIG. 1 is a plasma etching apparatus that performs etching using plasma. First, the etching apparatus of FIG. 1 will be described.
  • the type of plasma generation mechanism of the plasma generator is not particularly limited, and may be one in which a high frequency voltage is applied to a parallel plate or one in which a high frequency current is passed through a coil.
  • a high frequency voltage is applied to the member 12 to be etched in plasma
  • a negative voltage is applied to the member 12 to be etched, and positive ions are incident on the member 12 to be etched at high speed and vertically, so that anisotropic etching is possible.
  • the etching apparatus of FIG. 1 is provided with an etching gas supply unit that supplies the etching gas inside the chamber 10.
  • This etching gas supply unit is a fluorobutene gas supply unit 1 that connects a fluorobutene gas supply unit 1 that supplies a fluorobutene gas, a dilution gas supply unit 2 that supplies a dilution gas, a fluorobutene gas supply unit 1 and a chamber 10. It has a diluting gas supply pipe 6 for connecting a diluting gas supply unit 2 to an intermediate portion of the fluorobutene gas supply pipe 5 and a diluting gas supply pipe 5.
  • nickel-based alloys include Inconel (registered trademark), Hastelloy (registered trademark), Monel (registered trademark) and the like.
  • fluororesin include polytetrafluoroethylene (PTFE), polychlorotrifluoroethylene (PCTFE), tetrafluoroethylene / perfluoroalkoxyethylene copolymer (PFA), polyvinylidene fluoride (PVDF), and Teflon.
  • PTFE polytetrafluoroethylene
  • PCTFE polychlorotrifluoroethylene
  • PFA tetrafluoroethylene / perfluoroalkoxyethylene copolymer
  • PVDF polyvinylidene fluoride
  • Teflon Teflon
  • Preparation Example 4 Samples 4-1 to 4-5 were prepared in the same manner as in Preparation Example 1 except that 2,3,3,4,4,4-hexafluoro-1-butene was used as the fluorobutene. .. Then, the concentrations of various metal impurities in each sample were measured by an inductively coupled plasma mass spectrometer. The results are shown in Table 4.
  • the test piece was taken out from the chamber, the thicknesses of the silicon oxide film, the silicon nitride film, and the photoresist film were measured, and the amount of decrease in the thickness from each film before etching was calculated.
  • the etching rate of each film was calculated by dividing this decrease by the etching time. As a result, the etching rate of the photoresist film was less than 1 nm / min, the etching rate of the silicon oxide film was 64 nm / min, and the etching rate of the silicon nitride film was 57 nm / min. From this result, it was confirmed that the silicon oxide film and the silicon nitride film, which are the objects to be etched, are selectively etched as compared with the photoresist film, which is the object to be etched.
  • the etching target is selectively etched as compared with the non-etching target, and the etching is selected. It can be seen that the ratio is 10 or more.
  • the etching selectivity of the etching target to the non-etching target is lowered, and the etching is performed. It can be seen that the selection ratio is less than 10.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
PCT/JP2021/037422 2020-10-15 2021-10-08 エッチングガス、エッチング方法、及び半導体素子の製造方法 Ceased WO2022080268A1 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
CN202180070326.XA CN116325089A (zh) 2020-10-15 2021-10-08 蚀刻气体、蚀刻方法以及半导体元件的制造方法
IL302057A IL302057A (en) 2020-10-15 2021-10-08 Etching gas, etching method, and method for producing semiconductor element
JP2022556926A JP7786388B2 (ja) 2020-10-15 2021-10-08 エッチングガス、エッチング方法、及び半導体素子の製造方法
KR1020237011836A KR20230061542A (ko) 2020-10-15 2021-10-08 에칭 가스, 에칭 방법, 및 반도체 소자의 제조 방법
EP21880007.6A EP4231332A4 (en) 2020-10-15 2021-10-08 Etching gas, etching method, and method for producing semiconductor element
US18/031,816 US20230386850A1 (en) 2020-10-15 2021-10-08 Etching gas, etching method, and method for producing semiconductor device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020173915 2020-10-15
JP2020-173915 2021-10-15

Publications (1)

Publication Number Publication Date
WO2022080268A1 true WO2022080268A1 (ja) 2022-04-21

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PCT/JP2021/037422 Ceased WO2022080268A1 (ja) 2020-10-15 2021-10-08 エッチングガス、エッチング方法、及び半導体素子の製造方法

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US (1) US20230386850A1 (https=)
EP (1) EP4231332A4 (https=)
JP (1) JP7786388B2 (https=)
KR (1) KR20230061542A (https=)
CN (1) CN116325089A (https=)
IL (1) IL302057A (https=)
TW (1) TWI798870B (https=)
WO (1) WO2022080268A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102938468B1 (ko) 2022-06-21 2026-03-11 세메스 주식회사 식각 가스 조성물, 기판 처리 장치, 및 이를 이용한 패턴 형성 방법

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102919972B1 (ko) * 2022-06-21 2026-01-28 세메스 주식회사 식각 가스 조성물, 기판 처리 장치, 및 이를 이용한 패턴 형성 방법

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014185111A (ja) * 2013-03-25 2014-10-02 Nippon Zeon Co Ltd 高純度２，２−ジフルオロブタン
JP2015533029A (ja) * 2012-10-30 2015-11-16 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード 高アスペクト比酸化物エッチング用のフルオロカーボン分子
JP2017092357A (ja) * 2015-11-16 2017-05-25 セントラル硝子株式会社 ドライエッチングガスおよびドライエッチング方法
WO2017169809A1 (ja) * 2016-03-30 2017-10-05 日本ゼオン株式会社 フィルターおよびその製造方法、並びに、ドライエッチング用装置およびドライエッチング方法

Family Cites Families (2)

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Publication number Priority date Publication date Assignee Title
WO2009041560A1 (ja) * 2007-09-28 2009-04-02 Zeon Corporation プラズマエッチング方法
JP6788176B2 (ja) * 2015-04-06 2020-11-25 セントラル硝子株式会社 ドライエッチングガスおよびドライエッチング方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015533029A (ja) * 2012-10-30 2015-11-16 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード 高アスペクト比酸化物エッチング用のフルオロカーボン分子
JP2014185111A (ja) * 2013-03-25 2014-10-02 Nippon Zeon Co Ltd 高純度２，２−ジフルオロブタン
JP2017092357A (ja) * 2015-11-16 2017-05-25 セントラル硝子株式会社 ドライエッチングガスおよびドライエッチング方法
WO2017169809A1 (ja) * 2016-03-30 2017-10-05 日本ゼオン株式会社 フィルターおよびその製造方法、並びに、ドライエッチング用装置およびドライエッチング方法

Non-Patent Citations (1)

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Title
See also references of EP4231332A4 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102938468B1 (ko) 2022-06-21 2026-03-11 세메스 주식회사 식각 가스 조성물, 기판 처리 장치, 및 이를 이용한 패턴 형성 방법

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Publication number Publication date
EP4231332A1 (en) 2023-08-23
TW202231612A (zh) 2022-08-16
KR20230061542A (ko) 2023-05-08
JPWO2022080268A1 (https=) 2022-04-21
JP7786388B2 (ja) 2025-12-16
IL302057A (en) 2023-06-01
CN116325089A (zh) 2023-06-23
TWI798870B (zh) 2023-04-11
EP4231332A4 (en) 2024-11-13
US20230386850A1 (en) 2023-11-30

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