KR20230061542A - 에칭 가스, 에칭 방법, 및 반도체 소자의 제조 방법 - Google Patents

에칭 가스, 에칭 방법, 및 반도체 소자의 제조 방법 Download PDF

Info

Publication number
KR20230061542A
KR20230061542A KR1020237011836A KR20237011836A KR20230061542A KR 20230061542 A KR20230061542 A KR 20230061542A KR 1020237011836 A KR1020237011836 A KR 1020237011836A KR 20237011836 A KR20237011836 A KR 20237011836A KR 20230061542 A KR20230061542 A KR 20230061542A
Authority
KR
South Korea
Prior art keywords
etching
gas
etched
fluorobutene
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020237011836A
Other languages
English (en)
Korean (ko)
Inventor
아츠시 스즈키
Original Assignee
가부시끼가이샤 레조낙
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시끼가이샤 레조낙 filed Critical 가부시끼가이샤 레조낙
Publication of KR20230061542A publication Critical patent/KR20230061542A/ko
Ceased legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H01L21/31116—
    • H01L21/32135—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
KR1020237011836A 2020-10-15 2021-10-08 에칭 가스, 에칭 방법, 및 반도체 소자의 제조 방법 Ceased KR20230061542A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020173915 2020-10-15
JPJP-P-2020-173915 2020-10-15
PCT/JP2021/037422 WO2022080268A1 (ja) 2020-10-15 2021-10-08 エッチングガス、エッチング方法、及び半導体素子の製造方法

Publications (1)

Publication Number Publication Date
KR20230061542A true KR20230061542A (ko) 2023-05-08

Family

ID=81208185

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020237011836A Ceased KR20230061542A (ko) 2020-10-15 2021-10-08 에칭 가스, 에칭 방법, 및 반도체 소자의 제조 방법

Country Status (8)

Country Link
US (1) US20230386850A1 (https=)
EP (1) EP4231332A4 (https=)
JP (1) JP7786388B2 (https=)
KR (1) KR20230061542A (https=)
CN (1) CN116325089A (https=)
IL (1) IL302057A (https=)
TW (1) TWI798870B (https=)
WO (1) WO2022080268A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102919972B1 (ko) * 2022-06-21 2026-01-28 세메스 주식회사 식각 가스 조성물, 기판 처리 장치, 및 이를 이용한 패턴 형성 방법
KR102938468B1 (ko) 2022-06-21 2026-03-11 세메스 주식회사 식각 가스 조성물, 기판 처리 장치, 및 이를 이용한 패턴 형성 방법

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6527214B2 (ja) 2012-10-30 2019-06-05 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード エッチング耐性ポリマー層を堆積させる方法及びパターンエッチング構造の製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009041560A1 (ja) * 2007-09-28 2009-04-02 Zeon Corporation プラズマエッチング方法
JP2014185111A (ja) * 2013-03-25 2014-10-02 Nippon Zeon Co Ltd 高純度２，２−ジフルオロブタン
JP6788176B2 (ja) * 2015-04-06 2020-11-25 セントラル硝子株式会社 ドライエッチングガスおよびドライエッチング方法
JP6822763B2 (ja) * 2015-11-16 2021-01-27 セントラル硝子株式会社 ドライエッチング方法
EP3437709A4 (en) * 2016-03-30 2020-03-04 Zeon Corporation FILTER, METHOD FOR PRODUCING THE SAME, DRY-ETCHING DEVICE AND DRY-ETCHING METHOD

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6527214B2 (ja) 2012-10-30 2019-06-05 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード エッチング耐性ポリマー層を堆積させる方法及びパターンエッチング構造の製造方法

Also Published As

Publication number Publication date
EP4231332A1 (en) 2023-08-23
TW202231612A (zh) 2022-08-16
JPWO2022080268A1 (https=) 2022-04-21
JP7786388B2 (ja) 2025-12-16
IL302057A (en) 2023-06-01
CN116325089A (zh) 2023-06-23
WO2022080268A1 (ja) 2022-04-21
TWI798870B (zh) 2023-04-11
EP4231332A4 (en) 2024-11-13
US20230386850A1 (en) 2023-11-30

Similar Documents

Publication Publication Date Title
TWI788052B (zh) 蝕刻氣體、蝕刻方法，及半導體元件之製造方法
CN115868011B (zh) 蚀刻方法以及半导体元件的制造方法
KR20230061542A (ko) 에칭 가스, 에칭 방법, 및 반도체 소자의 제조 방법
US12406854B2 (en) Dry etching method, production method for semiconductor element, and cleaning method
KR102828130B1 (ko) 에칭 가스 및 그 제조 방법, 및 에칭 방법, 반도체 소자의 제조 방법
KR102828127B1 (ko) 에칭 가스 및 그 제조 방법, 및 에칭 방법, 반도체 소자의 제조 방법
JP7677157B2 (ja) エッチング方法及び半導体素子の製造方法
TWI815331B (zh) 蝕刻氣體及其製造方法、蝕刻方法以及半導體元件之製造方法
KR20240038985A (ko) 에칭 방법 및 반도체 소자의 제조 방법

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

B15 Application refused following examination

Free format text: ST27 STATUS EVENT CODE: N-2-6-B10-B15-EXM-PE0601 (AS PROVIDED BY THE NATIONAL OFFICE)

PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

P11 Amendment of application requested

Free format text: ST27 STATUS EVENT CODE: A-2-2-P10-P11-NAP-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

B17 Application discontinued following pre-grant review

Free format text: ST27 STATUS EVENT CODE: N-2-6-B10-B17-REX-PX0601 (AS PROVIDED BY THE NATIONAL OFFICE)

PX0601 Decision of rejection after re-examination

St.27 status event code: N-2-6-B10-B17-rex-PX0601