TWI795580B - 用於微電子製造的載具 - Google Patents

用於微電子製造的載具 Download PDF

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Publication number
TWI795580B
TWI795580B TW108124652A TW108124652A TWI795580B TW I795580 B TWI795580 B TW I795580B TW 108124652 A TW108124652 A TW 108124652A TW 108124652 A TW108124652 A TW 108124652A TW I795580 B TWI795580 B TW I795580B
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TW
Taiwan
Prior art keywords
equal
substrate
less
glass
compressive stress
Prior art date
Application number
TW108124652A
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English (en)
Chinese (zh)
Other versions
TW202012331A (zh
Inventor
奧拉達波奧拉勒肯 貝羅
唐諾亞瑟 克拉克
格瑞格利史考特 葛萊思曼
帕斯卡爾 奧朗
查爾斯多納惠 里佐羅
Original Assignee
美商康寧公司
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Application filed by 美商康寧公司 filed Critical 美商康寧公司
Publication of TW202012331A publication Critical patent/TW202012331A/zh
Application granted granted Critical
Publication of TWI795580B publication Critical patent/TWI795580B/zh

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    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C21/00—Treatment of glass, not in the form of fibres or filaments, by diffusing ions or metals in the surface
    • C03C21/001—Treatment of glass, not in the form of fibres or filaments, by diffusing ions or metals in the surface in liquid phase, e.g. molten salts, solutions
    • C03C21/002—Treatment of glass, not in the form of fibres or filaments, by diffusing ions or metals in the surface in liquid phase, e.g. molten salts, solutions to perform ion-exchange between alkali ions
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/083—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound
    • C03C3/085—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal
    • C03C3/087—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal containing calcium oxide, e.g. common sheet or container glass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/019—Manufacture or treatment using temporary auxiliary substrates
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
    • C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
    • C03C3/093—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium containing zinc or zirconium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7424—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used as a support during the manufacture of self-supporting substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7436—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used to support a device or a wafer when forming electrical connections thereto
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/08—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers by depositing layers on the chip or wafer, e.g. "chip-first" RDLs
    • H10W70/09—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers by depositing layers on the chip or wafer, e.g. "chip-first" RDLs extending onto an encapsulation that laterally surrounds the chip or wafer, e.g. fan-out wafer level package [FOWLP] RDLs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241—Dispositions, e.g. layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/9413—Dispositions of bond pads on encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/014—Manufacture or treatment using batch processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/016—Manufacture or treatment using moulds

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Surface Treatment Of Glass (AREA)
  • Manufacturing & Machinery (AREA)
  • Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
  • Silicon Polymers (AREA)
TW108124652A 2018-07-13 2019-07-12 用於微電子製造的載具 TWI795580B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201862697661P 2018-07-13 2018-07-13
US62/697,661 2018-07-13

Publications (2)

Publication Number Publication Date
TW202012331A TW202012331A (zh) 2020-04-01
TWI795580B true TWI795580B (zh) 2023-03-11

Family

ID=67211976

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108124652A TWI795580B (zh) 2018-07-13 2019-07-12 用於微電子製造的載具

Country Status (6)

Country Link
US (1) US10829412B2 (https=)
JP (2) JP7811062B2 (https=)
KR (1) KR102685142B1 (https=)
CN (1) CN112424136A (https=)
TW (1) TWI795580B (https=)
WO (1) WO2020013984A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210110510A (ko) * 2020-02-28 2021-09-08 쇼오트 아게 유리 부재의 분리 방법 및 유리 서브부재
ES2976069T3 (es) 2020-03-06 2024-07-22 Schott Ag Procedimiento para la preparación y/o realización de la separación de un elemento de sustrato y un elemento parcial de sustrato
JP7814673B2 (ja) 2020-05-28 2026-02-17 日本電気硝子株式会社 支持ガラス基板及びこれを用いた積層基板
CN113754289B (zh) * 2021-09-18 2023-06-06 重庆鑫景特种玻璃有限公司 一种低翘曲的强化微晶玻璃、及其制备方法和用途

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201307240A (zh) * 2011-05-23 2013-02-16 Asahi Glass Co Ltd 用於製造化學強化玻璃之方法
CN104428266A (zh) * 2012-02-29 2015-03-18 康宁股份有限公司 确保容器完整性的玻璃封装
TW201533001A (zh) * 2013-11-19 2015-09-01 康寧公司 離子可交換的高抗損傷玻璃
WO2017126605A1 (ja) * 2016-01-21 2017-07-27 旭硝子株式会社 化学強化ガラス及び化学強化ガラスの製造方法
TW201731788A (zh) * 2015-12-11 2017-09-16 康寧公司 具有金屬氧化物濃度梯度之可熔融成形的玻璃基物件
TW201806902A (zh) * 2016-04-20 2018-03-01 康寧公司 包含金屬氧化物濃度梯度之玻璃基物件

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US8341976B2 (en) 2009-02-19 2013-01-01 Corning Incorporated Method of separating strengthened glass
US9031813B2 (en) 2010-08-27 2015-05-12 Corning Incorporated Methods and apparatus for estimating gravity-free shapes
FR2964655B1 (fr) 2010-09-13 2017-05-19 Saint Gobain Feuille de verre
US9701580B2 (en) * 2012-02-29 2017-07-11 Corning Incorporated Aluminosilicate glasses for ion exchange
JP5376032B1 (ja) * 2012-05-25 2013-12-25 旭硝子株式会社 化学強化ガラス板、カバーガラスおよびディスプレイ装置
DE202013012920U1 (de) 2012-05-31 2022-01-24 Corning Incorporated Zirkon-kompatibles, ionenaustauschbares Glas mit hoher Schadensresistenz
US20140127857A1 (en) 2012-11-07 2014-05-08 Taiwan Semiconductor Manufacturing Company, Ltd. Carrier Wafers, Methods of Manufacture Thereof, and Packaging Methods
JP6135773B2 (ja) * 2013-12-13 2017-05-31 旭硝子株式会社 化学強化用ガラスおよび化学強化ガラス並びに化学強化ガラスの製造方法
TWI697403B (zh) * 2014-06-19 2020-07-01 美商康寧公司 無易碎應力分布曲線的玻璃
TWI861872B (zh) 2014-10-08 2024-11-11 美商康寧公司 具有葉長石及矽酸鋰結構的高強度玻璃陶瓷
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KR102602900B1 (ko) 2015-12-28 2023-11-16 에이지씨 가부시키가이샤 유리 기판, 적층 기판, 적층체, 및 반도체 패키지의 제조 방법

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201307240A (zh) * 2011-05-23 2013-02-16 Asahi Glass Co Ltd 用於製造化學強化玻璃之方法
CN104428266A (zh) * 2012-02-29 2015-03-18 康宁股份有限公司 确保容器完整性的玻璃封装
TW201533001A (zh) * 2013-11-19 2015-09-01 康寧公司 離子可交換的高抗損傷玻璃
TW201731788A (zh) * 2015-12-11 2017-09-16 康寧公司 具有金屬氧化物濃度梯度之可熔融成形的玻璃基物件
WO2017126605A1 (ja) * 2016-01-21 2017-07-27 旭硝子株式会社 化学強化ガラス及び化学強化ガラスの製造方法
TW201806902A (zh) * 2016-04-20 2018-03-01 康寧公司 包含金屬氧化物濃度梯度之玻璃基物件

Also Published As

Publication number Publication date
CN112424136A (zh) 2021-02-26
KR102685142B1 (ko) 2024-07-17
WO2020013984A1 (en) 2020-01-16
KR20210031477A (ko) 2021-03-19
US10829412B2 (en) 2020-11-10
JP2024103808A (ja) 2024-08-01
JP2021533074A (ja) 2021-12-02
US20200017407A1 (en) 2020-01-16
JP7811062B2 (ja) 2026-02-04
TW202012331A (zh) 2020-04-01

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