JP7811062B2 - マイクロエレクトロニクス製品製作用担体 - Google Patents

マイクロエレクトロニクス製品製作用担体

Info

Publication number
JP7811062B2
JP7811062B2 JP2021523550A JP2021523550A JP7811062B2 JP 7811062 B2 JP7811062 B2 JP 7811062B2 JP 2021523550 A JP2021523550 A JP 2021523550A JP 2021523550 A JP2021523550 A JP 2021523550A JP 7811062 B2 JP7811062 B2 JP 7811062B2
Authority
JP
Japan
Prior art keywords
substrate
reinforced substrate
less
glass
carrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2021523550A
Other languages
English (en)
Japanese (ja)
Other versions
JP2021533074A5 (https=
JP2021533074A (ja
Inventor
オラレカン ベッロ，オラダポ
アーサー クラーク，ドナルド
スコット グレーズマン，グレゴリー
オラム，パスカル
ドナヒュー リッツォロ，チャールズ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Corning Inc
Original Assignee
Corning Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Corning Inc filed Critical Corning Inc
Publication of JP2021533074A publication Critical patent/JP2021533074A/ja
Publication of JP2021533074A5 publication Critical patent/JP2021533074A5/ja
Priority to JP2024093481A priority Critical patent/JP2024103808A/ja
Application granted granted Critical
Publication of JP7811062B2 publication Critical patent/JP7811062B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C21/00—Treatment of glass, not in the form of fibres or filaments, by diffusing ions or metals in the surface
    • C03C21/001—Treatment of glass, not in the form of fibres or filaments, by diffusing ions or metals in the surface in liquid phase, e.g. molten salts, solutions
    • C03C21/002—Treatment of glass, not in the form of fibres or filaments, by diffusing ions or metals in the surface in liquid phase, e.g. molten salts, solutions to perform ion-exchange between alkali ions
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/083—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound
    • C03C3/085—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal
    • C03C3/087—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal containing calcium oxide, e.g. common sheet or container glass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7424—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used as a support during the manufacture of self-supporting substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7436—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used to support a device or a wafer when forming electrical connections thereto
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/08—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers by depositing layers on the chip or wafer, e.g. "chip-first" RDLs
    • H10W70/09—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers by depositing layers on the chip or wafer, e.g. "chip-first" RDLs extending onto an encapsulation that laterally surrounds the chip or wafer, e.g. fan-out wafer level package [FOWLP] RDLs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241—Dispositions, e.g. layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/9413—Dispositions of bond pads on encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/019—Manufacture or treatment using temporary auxiliary substrates
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
    • C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
    • C03C3/093—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium containing zinc or zirconium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/014—Manufacture or treatment using batch processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/016—Manufacture or treatment using moulds

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Surface Treatment Of Glass (AREA)
  • Manufacturing & Machinery (AREA)
  • Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
  • Silicon Polymers (AREA)
JP2021523550A 2018-07-13 2019-06-25 マイクロエレクトロニクス製品製作用担体 Active JP7811062B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2024093481A JP2024103808A (ja) 2018-07-13 2024-06-10 マイクロエレクトロニクス製品製作用担体

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862697661P 2018-07-13 2018-07-13
US62/697,661 2018-07-13
PCT/US2019/038946 WO2020013984A1 (en) 2018-07-13 2019-06-25 Carriers for microelectronics fabrication

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2024093481A Division JP2024103808A (ja) 2018-07-13 2024-06-10 マイクロエレクトロニクス製品製作用担体

Publications (3)

Publication Number Publication Date
JP2021533074A JP2021533074A (ja) 2021-12-02
JP2021533074A5 JP2021533074A5 (https=) 2023-04-04
JP7811062B2 true JP7811062B2 (ja) 2026-02-04

Family

ID=67211976

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2021523550A Active JP7811062B2 (ja) 2018-07-13 2019-06-25 マイクロエレクトロニクス製品製作用担体
JP2024093481A Abandoned JP2024103808A (ja) 2018-07-13 2024-06-10 マイクロエレクトロニクス製品製作用担体

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2024093481A Abandoned JP2024103808A (ja) 2018-07-13 2024-06-10 マイクロエレクトロニクス製品製作用担体

Country Status (6)

Country Link
US (1) US10829412B2 (https=)
JP (2) JP7811062B2 (https=)
KR (1) KR102685142B1 (https=)
CN (1) CN112424136A (https=)
TW (1) TWI795580B (https=)
WO (1) WO2020013984A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210110510A (ko) * 2020-02-28 2021-09-08 쇼오트 아게 유리 부재의 분리 방법 및 유리 서브부재
ES2976069T3 (es) 2020-03-06 2024-07-22 Schott Ag Procedimiento para la preparación y/o realización de la separación de un elemento de sustrato y un elemento parcial de sustrato
JP7814673B2 (ja) 2020-05-28 2026-02-17 日本電気硝子株式会社 支持ガラス基板及びこれを用いた積層基板
CN113754289B (zh) * 2021-09-18 2023-06-06 重庆鑫景特种玻璃有限公司 一种低翘曲的强化微晶玻璃、及其制备方法和用途

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015512853A (ja) 2012-02-29 2015-04-30 コーニング インコーポレイテッド 容器健全性を確保するガラス包装
JP2016538221A (ja) 2013-11-19 2016-12-08 コーニング インコーポレイテッド 損傷抵抗性の高いイオン交換可能なガラス

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100091228A (ko) 2007-11-29 2010-08-18 코닝 인코포레이티드 개선된 인성 및 내스크래치성을 갖는 유리
US8341976B2 (en) 2009-02-19 2013-01-01 Corning Incorporated Method of separating strengthened glass
US9031813B2 (en) 2010-08-27 2015-05-12 Corning Incorporated Methods and apparatus for estimating gravity-free shapes
FR2964655B1 (fr) 2010-09-13 2017-05-19 Saint Gobain Feuille de verre
JP5834793B2 (ja) * 2010-12-24 2015-12-24 旭硝子株式会社 化学強化ガラスの製造方法
US9701580B2 (en) * 2012-02-29 2017-07-11 Corning Incorporated Aluminosilicate glasses for ion exchange
JP5376032B1 (ja) * 2012-05-25 2013-12-25 旭硝子株式会社 化学強化ガラス板、カバーガラスおよびディスプレイ装置
DE202013012920U1 (de) 2012-05-31 2022-01-24 Corning Incorporated Zirkon-kompatibles, ionenaustauschbares Glas mit hoher Schadensresistenz
US20140127857A1 (en) 2012-11-07 2014-05-08 Taiwan Semiconductor Manufacturing Company, Ltd. Carrier Wafers, Methods of Manufacture Thereof, and Packaging Methods
JP6135773B2 (ja) * 2013-12-13 2017-05-31 旭硝子株式会社 化学強化用ガラスおよび化学強化ガラス並びに化学強化ガラスの製造方法
TWI697403B (zh) * 2014-06-19 2020-07-01 美商康寧公司 無易碎應力分布曲線的玻璃
TWI861872B (zh) 2014-10-08 2024-11-11 美商康寧公司 具有葉長石及矽酸鋰結構的高強度玻璃陶瓷
WO2016073539A1 (en) * 2014-11-04 2016-05-12 Corning Incorporated Deep non-frangible stress profiles and methods of making
KR102636900B1 (ko) 2015-10-02 2024-02-16 에이지씨 가부시키가이샤 유리 기판, 적층 기판 및 적층체
TWI697463B (zh) * 2015-12-11 2020-07-01 美商康寧公司 具有金屬氧化物濃度梯度之可熔融成形的玻璃基物件
KR102602900B1 (ko) 2015-12-28 2023-11-16 에이지씨 가부시키가이샤 유리 기판, 적층 기판, 적층체, 및 반도체 패키지의 제조 방법
WO2017126605A1 (ja) * 2016-01-21 2017-07-27 旭硝子株式会社 化学強化ガラス及び化学強化ガラスの製造方法
US11453612B2 (en) * 2016-04-20 2022-09-27 Corning Incorporated Glass-based articles including a metal oxide concentration gradient

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015512853A (ja) 2012-02-29 2015-04-30 コーニング インコーポレイテッド 容器健全性を確保するガラス包装
JP2016538221A (ja) 2013-11-19 2016-12-08 コーニング インコーポレイテッド 損傷抵抗性の高いイオン交換可能なガラス

Also Published As

Publication number Publication date
CN112424136A (zh) 2021-02-26
KR102685142B1 (ko) 2024-07-17
WO2020013984A1 (en) 2020-01-16
KR20210031477A (ko) 2021-03-19
US10829412B2 (en) 2020-11-10
TWI795580B (zh) 2023-03-11
JP2024103808A (ja) 2024-08-01
JP2021533074A (ja) 2021-12-02
US20200017407A1 (en) 2020-01-16
TW202012331A (zh) 2020-04-01

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