CN112424136A - 用于微电子制造的载体 - Google Patents

用于微电子制造的载体 Download PDF

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Publication number
CN112424136A
CN112424136A CN201980047122.7A CN201980047122A CN112424136A CN 112424136 A CN112424136 A CN 112424136A CN 201980047122 A CN201980047122 A CN 201980047122A CN 112424136 A CN112424136 A CN 112424136A
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CN
China
Prior art keywords
equal
substrate
less
glass
carrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201980047122.7A
Other languages
English (en)
Chinese (zh)
Inventor
O·O·贝洛
D·A·克拉克
G·S·格莱泽曼
P·奥拉姆
C·D·里佐罗
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Corning Inc
Original Assignee
Corning Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Corning Inc filed Critical Corning Inc
Publication of CN112424136A publication Critical patent/CN112424136A/zh
Pending legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C21/00—Treatment of glass, not in the form of fibres or filaments, by diffusing ions or metals in the surface
    • C03C21/001—Treatment of glass, not in the form of fibres or filaments, by diffusing ions or metals in the surface in liquid phase, e.g. molten salts, solutions
    • C03C21/002—Treatment of glass, not in the form of fibres or filaments, by diffusing ions or metals in the surface in liquid phase, e.g. molten salts, solutions to perform ion-exchange between alkali ions
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/083—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound
    • C03C3/085—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal
    • C03C3/087—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal containing calcium oxide, e.g. common sheet or container glass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/019—Manufacture or treatment using temporary auxiliary substrates
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
    • C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
    • C03C3/093—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium containing zinc or zirconium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7424—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used as a support during the manufacture of self-supporting substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7436—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used to support a device or a wafer when forming electrical connections thereto
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/08—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers by depositing layers on the chip or wafer, e.g. "chip-first" RDLs
    • H10W70/09—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers by depositing layers on the chip or wafer, e.g. "chip-first" RDLs extending onto an encapsulation that laterally surrounds the chip or wafer, e.g. fan-out wafer level package [FOWLP] RDLs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241—Dispositions, e.g. layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/9413—Dispositions of bond pads on encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/014—Manufacture or treatment using batch processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/016—Manufacture or treatment using moulds

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Surface Treatment Of Glass (AREA)
  • Manufacturing & Machinery (AREA)
  • Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
  • Silicon Polymers (AREA)
CN201980047122.7A 2018-07-13 2019-06-25 用于微电子制造的载体 Pending CN112424136A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862697661P 2018-07-13 2018-07-13
US62/697,661 2018-07-13
PCT/US2019/038946 WO2020013984A1 (en) 2018-07-13 2019-06-25 Carriers for microelectronics fabrication

Publications (1)

Publication Number Publication Date
CN112424136A true CN112424136A (zh) 2021-02-26

Family

ID=67211976

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201980047122.7A Pending CN112424136A (zh) 2018-07-13 2019-06-25 用于微电子制造的载体

Country Status (6)

Country Link
US (1) US10829412B2 (https=)
JP (2) JP7811062B2 (https=)
KR (1) KR102685142B1 (https=)
CN (1) CN112424136A (https=)
TW (1) TWI795580B (https=)
WO (1) WO2020013984A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210110510A (ko) * 2020-02-28 2021-09-08 쇼오트 아게 유리 부재의 분리 방법 및 유리 서브부재
ES2976069T3 (es) 2020-03-06 2024-07-22 Schott Ag Procedimiento para la preparación y/o realización de la separación de un elemento de sustrato y un elemento parcial de sustrato
JP7814673B2 (ja) 2020-05-28 2026-02-17 日本電気硝子株式会社 支持ガラス基板及びこれを用いた積層基板
CN113754289B (zh) * 2021-09-18 2023-06-06 重庆鑫景特种玻璃有限公司 一种低翘曲的强化微晶玻璃、及其制备方法和用途

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120297829A1 (en) * 2011-05-23 2012-11-29 Asahi Glass Company, Limited Method for producing chemically tempered glass
US20130224491A1 (en) * 2012-02-29 2013-08-29 Morten Mattrup Smedskjaer Aluminosilicate glasses for ion exchange
CN104428266A (zh) * 2012-02-29 2015-03-18 康宁股份有限公司 确保容器完整性的玻璃封装
US20150368148A1 (en) * 2014-06-19 2015-12-24 Corning Incorporated Glasses having non-frangible stress profiles
CN105916824A (zh) * 2013-11-19 2016-08-31 康宁股份有限公司 可离子交换的具有高耐损坏性的玻璃
US20160355430A1 (en) * 2013-12-13 2016-12-08 Asahi Glass Company, Limited Glass for chemical strengthening, chemically-strengthened glass, and method for producing chemically-strengthened glass

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100091228A (ko) 2007-11-29 2010-08-18 코닝 인코포레이티드 개선된 인성 및 내스크래치성을 갖는 유리
US8341976B2 (en) 2009-02-19 2013-01-01 Corning Incorporated Method of separating strengthened glass
US9031813B2 (en) 2010-08-27 2015-05-12 Corning Incorporated Methods and apparatus for estimating gravity-free shapes
FR2964655B1 (fr) 2010-09-13 2017-05-19 Saint Gobain Feuille de verre
JP5376032B1 (ja) * 2012-05-25 2013-12-25 旭硝子株式会社 化学強化ガラス板、カバーガラスおよびディスプレイ装置
DE202013012920U1 (de) 2012-05-31 2022-01-24 Corning Incorporated Zirkon-kompatibles, ionenaustauschbares Glas mit hoher Schadensresistenz
US20140127857A1 (en) 2012-11-07 2014-05-08 Taiwan Semiconductor Manufacturing Company, Ltd. Carrier Wafers, Methods of Manufacture Thereof, and Packaging Methods
TWI861872B (zh) 2014-10-08 2024-11-11 美商康寧公司 具有葉長石及矽酸鋰結構的高強度玻璃陶瓷
WO2016073539A1 (en) * 2014-11-04 2016-05-12 Corning Incorporated Deep non-frangible stress profiles and methods of making
KR102636900B1 (ko) 2015-10-02 2024-02-16 에이지씨 가부시키가이샤 유리 기판, 적층 기판 및 적층체
TWI697463B (zh) * 2015-12-11 2020-07-01 美商康寧公司 具有金屬氧化物濃度梯度之可熔融成形的玻璃基物件
KR102602900B1 (ko) 2015-12-28 2023-11-16 에이지씨 가부시키가이샤 유리 기판, 적층 기판, 적층체, 및 반도체 패키지의 제조 방법
WO2017126605A1 (ja) * 2016-01-21 2017-07-27 旭硝子株式会社 化学強化ガラス及び化学強化ガラスの製造方法
US11453612B2 (en) * 2016-04-20 2022-09-27 Corning Incorporated Glass-based articles including a metal oxide concentration gradient

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120297829A1 (en) * 2011-05-23 2012-11-29 Asahi Glass Company, Limited Method for producing chemically tempered glass
US20130224491A1 (en) * 2012-02-29 2013-08-29 Morten Mattrup Smedskjaer Aluminosilicate glasses for ion exchange
CN104428266A (zh) * 2012-02-29 2015-03-18 康宁股份有限公司 确保容器完整性的玻璃封装
CN105916824A (zh) * 2013-11-19 2016-08-31 康宁股份有限公司 可离子交换的具有高耐损坏性的玻璃
US20160355430A1 (en) * 2013-12-13 2016-12-08 Asahi Glass Company, Limited Glass for chemical strengthening, chemically-strengthened glass, and method for producing chemically-strengthened glass
US20150368148A1 (en) * 2014-06-19 2015-12-24 Corning Incorporated Glasses having non-frangible stress profiles

Also Published As

Publication number Publication date
KR102685142B1 (ko) 2024-07-17
WO2020013984A1 (en) 2020-01-16
KR20210031477A (ko) 2021-03-19
US10829412B2 (en) 2020-11-10
TWI795580B (zh) 2023-03-11
JP2024103808A (ja) 2024-08-01
JP2021533074A (ja) 2021-12-02
US20200017407A1 (en) 2020-01-16
JP7811062B2 (ja) 2026-02-04
TW202012331A (zh) 2020-04-01

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