KR102685142B1 - 마이크로일렉트로닉스(microelectronics) 제조를 위한 캐리어 - Google Patents

마이크로일렉트로닉스(microelectronics) 제조를 위한 캐리어 Download PDF

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Publication number
KR102685142B1
KR102685142B1 KR1020217003378A KR20217003378A KR102685142B1 KR 102685142 B1 KR102685142 B1 KR 102685142B1 KR 1020217003378 A KR1020217003378 A KR 1020217003378A KR 20217003378 A KR20217003378 A KR 20217003378A KR 102685142 B1 KR102685142 B1 KR 102685142B1
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South Korea
Prior art keywords
substrate
glass
less
carrier
compressive stress
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KR1020217003378A
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Korean (ko)
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KR20210031477A (ko
Inventor
올라다포 올라레칸 벨로
도날드 아더 클라크
그레고리 스콧 글레세만
파스칼 오람
찰스 도나휴 리졸로
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코닝 인코포레이티드
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C21/00—Treatment of glass, not in the form of fibres or filaments, by diffusing ions or metals in the surface
    • C03C21/001—Treatment of glass, not in the form of fibres or filaments, by diffusing ions or metals in the surface in liquid phase, e.g. molten salts, solutions
    • C03C21/002—Treatment of glass, not in the form of fibres or filaments, by diffusing ions or metals in the surface in liquid phase, e.g. molten salts, solutions to perform ion-exchange between alkali ions
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/083—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound
    • C03C3/085—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal
    • C03C3/087—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal containing calcium oxide, e.g. common sheet or container glass
    • H01L21/568—
    • H01L21/6835—
    • H01L24/19—
    • H01L24/96—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/019—Manufacture or treatment using temporary auxiliary substrates
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
    • C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
    • C03C3/093—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium containing zinc or zirconium
    • H01L2221/68345—
    • H01L2221/68372—
    • H01L2224/04105—
    • H01L2924/3511—
    • H01L2924/3512—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7424—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used as a support during the manufacture of self-supporting substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7436—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used to support a device or a wafer when forming electrical connections thereto
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/08—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers by depositing layers on the chip or wafer, e.g. "chip-first" RDLs
    • H10W70/09—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers by depositing layers on the chip or wafer, e.g. "chip-first" RDLs extending onto an encapsulation that laterally surrounds the chip or wafer, e.g. fan-out wafer level package [FOWLP] RDLs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241—Dispositions, e.g. layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/9413—Dispositions of bond pads on encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/014—Manufacture or treatment using batch processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/016—Manufacture or treatment using moulds

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Surface Treatment Of Glass (AREA)
  • Manufacturing & Machinery (AREA)
  • Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
  • Silicon Polymers (AREA)
KR1020217003378A 2018-07-13 2019-06-25 마이크로일렉트로닉스(microelectronics) 제조를 위한 캐리어 Active KR102685142B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862697661P 2018-07-13 2018-07-13
US62/697,661 2018-07-13
PCT/US2019/038946 WO2020013984A1 (en) 2018-07-13 2019-06-25 Carriers for microelectronics fabrication

Publications (2)

Publication Number Publication Date
KR20210031477A KR20210031477A (ko) 2021-03-19
KR102685142B1 true KR102685142B1 (ko) 2024-07-17

Family

ID=67211976

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020217003378A Active KR102685142B1 (ko) 2018-07-13 2019-06-25 마이크로일렉트로닉스(microelectronics) 제조를 위한 캐리어

Country Status (6)

Country Link
US (1) US10829412B2 (https=)
JP (2) JP7811062B2 (https=)
KR (1) KR102685142B1 (https=)
CN (1) CN112424136A (https=)
TW (1) TWI795580B (https=)
WO (1) WO2020013984A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210110510A (ko) * 2020-02-28 2021-09-08 쇼오트 아게 유리 부재의 분리 방법 및 유리 서브부재
ES2976069T3 (es) 2020-03-06 2024-07-22 Schott Ag Procedimiento para la preparación y/o realización de la separación de un elemento de sustrato y un elemento parcial de sustrato
JP7814673B2 (ja) 2020-05-28 2026-02-17 日本電気硝子株式会社 支持ガラス基板及びこれを用いた積層基板
CN113754289B (zh) * 2021-09-18 2023-06-06 重庆鑫景特种玻璃有限公司 一种低翘曲的强化微晶玻璃、及其制备方法和用途

Citations (1)

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Publication number Priority date Publication date Assignee Title
JP2018536615A (ja) 2015-12-11 2018-12-13 コーニング インコーポレイテッド 金属酸化物濃度勾配を含むフュージョン成形可能なガラス系物品

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KR20100091228A (ko) 2007-11-29 2010-08-18 코닝 인코포레이티드 개선된 인성 및 내스크래치성을 갖는 유리
US8341976B2 (en) 2009-02-19 2013-01-01 Corning Incorporated Method of separating strengthened glass
US9031813B2 (en) 2010-08-27 2015-05-12 Corning Incorporated Methods and apparatus for estimating gravity-free shapes
FR2964655B1 (fr) 2010-09-13 2017-05-19 Saint Gobain Feuille de verre
JP5834793B2 (ja) * 2010-12-24 2015-12-24 旭硝子株式会社 化学強化ガラスの製造方法
US9850162B2 (en) * 2012-02-29 2017-12-26 Corning Incorporated Glass packaging ensuring container integrity
US9701580B2 (en) * 2012-02-29 2017-07-11 Corning Incorporated Aluminosilicate glasses for ion exchange
JP5376032B1 (ja) * 2012-05-25 2013-12-25 旭硝子株式会社 化学強化ガラス板、カバーガラスおよびディスプレイ装置
DE202013012920U1 (de) 2012-05-31 2022-01-24 Corning Incorporated Zirkon-kompatibles, ionenaustauschbares Glas mit hoher Schadensresistenz
US20140127857A1 (en) 2012-11-07 2014-05-08 Taiwan Semiconductor Manufacturing Company, Ltd. Carrier Wafers, Methods of Manufacture Thereof, and Packaging Methods
JP6725416B2 (ja) * 2013-11-19 2020-07-15 コーニング インコーポレイテッド 損傷抵抗性の高いイオン交換可能なガラス
JP6135773B2 (ja) * 2013-12-13 2017-05-31 旭硝子株式会社 化学強化用ガラスおよび化学強化ガラス並びに化学強化ガラスの製造方法
TWI697403B (zh) * 2014-06-19 2020-07-01 美商康寧公司 無易碎應力分布曲線的玻璃
TWI861872B (zh) 2014-10-08 2024-11-11 美商康寧公司 具有葉長石及矽酸鋰結構的高強度玻璃陶瓷
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WO2017126605A1 (ja) * 2016-01-21 2017-07-27 旭硝子株式会社 化学強化ガラス及び化学強化ガラスの製造方法
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Also Published As

Publication number Publication date
CN112424136A (zh) 2021-02-26
WO2020013984A1 (en) 2020-01-16
KR20210031477A (ko) 2021-03-19
US10829412B2 (en) 2020-11-10
TWI795580B (zh) 2023-03-11
JP2024103808A (ja) 2024-08-01
JP2021533074A (ja) 2021-12-02
US20200017407A1 (en) 2020-01-16
JP7811062B2 (ja) 2026-02-04
TW202012331A (zh) 2020-04-01

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