TWI794127B - 發光元件及其製作方法 - Google Patents

發光元件及其製作方法 Download PDF

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Publication number
TWI794127B
TWI794127B TW111127725A TW111127725A TWI794127B TW I794127 B TWI794127 B TW I794127B TW 111127725 A TW111127725 A TW 111127725A TW 111127725 A TW111127725 A TW 111127725A TW I794127 B TWI794127 B TW I794127B
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layer
light
wavelength conversion
light emitting
barrier layer
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TW111127725A
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Chinese (zh)
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TW202249305A (zh
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謝明勳
盧宗宏
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晶元光電股份有限公司
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8515—Wavelength conversion means not being in contact with the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/872—Periodic patterns for optical field-shaping, e.g. photonic bandgap structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/882—Scattering means

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  • Led Device Packages (AREA)
  • Optical Filters (AREA)
  • Led Devices (AREA)
  • Control Of Motors That Do Not Use Commutators (AREA)
  • Vehicle Body Suspensions (AREA)
  • Control Of El Displays (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Heating, Cooling, Or Curing Plastics Or The Like In General (AREA)
TW111127725A 2018-02-20 2019-02-20 發光元件及其製作方法 TWI794127B (zh)

Applications Claiming Priority (2)

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US201862632732P 2018-02-20 2018-02-20
US62/632,732 2018-02-20

Publications (2)

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TW202249305A TW202249305A (zh) 2022-12-16
TWI794127B true TWI794127B (zh) 2023-02-21

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TW108105622A TWI774927B (zh) 2018-02-20 2019-02-20 發光元件及其製作方法
TW108105645A TWI797259B (zh) 2018-02-20 2019-02-20 一種發光單元及其發光裝置

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TW108105645A TWI797259B (zh) 2018-02-20 2019-02-20 一種發光單元及其發光裝置

Country Status (6)

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US (2) US10833233B2 (enExample)
JP (1) JP7224201B2 (enExample)
KR (1) KR102453678B1 (enExample)
CN (2) CN114613896A (enExample)
DE (1) DE102019104268A1 (enExample)
TW (3) TWI794127B (enExample)

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KR102551354B1 (ko) * 2018-04-20 2023-07-04 삼성전자 주식회사 반도체 발광 소자 및 그 제조 방법
TWI800548B (zh) * 2018-11-06 2023-05-01 晶元光電股份有限公司 發光裝置及其製作方法
CN112635640A (zh) * 2020-12-14 2021-04-09 深圳信息职业技术学院 量子点发光器件及其制备方法与应用
TWI811625B (zh) * 2021-01-29 2023-08-11 台灣愛司帝科技股份有限公司 晶片移轉方法、晶片移轉裝置以及影像顯示器
EP4160704B1 (en) * 2021-09-29 2024-12-18 Nichia Corporation Light emitting device and method of manufacturing light emitting device
JP7401809B2 (ja) * 2021-09-29 2023-12-20 日亜化学工業株式会社 発光装置及び発光装置の製造方法
CN114300586B (zh) * 2021-12-29 2024-03-29 深圳市思坦科技有限公司 一种发光器件制备方法、发光器件及显示装置
CN117153995A (zh) * 2023-10-30 2023-12-01 罗化芯显示科技开发(江苏)有限公司 一种led封装膜层及led封装结构

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TWI774927B (zh) 2022-08-21
TW201935716A (zh) 2019-09-01
JP2019145794A (ja) 2019-08-29
DE102019104268A1 (de) 2019-08-22
US20190259922A1 (en) 2019-08-22
CN114613896A (zh) 2022-06-10
CN110176529A (zh) 2019-08-27
CN110176529B (zh) 2022-03-08
KR102453678B1 (ko) 2022-10-11
US10833233B2 (en) 2020-11-10
KR20190100076A (ko) 2019-08-28
TW201935714A (zh) 2019-09-01
JP7224201B2 (ja) 2023-02-17
US20210020815A1 (en) 2021-01-21
TW202249305A (zh) 2022-12-16
TWI797259B (zh) 2023-04-01
US11430925B2 (en) 2022-08-30

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