TWI794121B - 正型阻劑材料及圖案形成方法 - Google Patents

正型阻劑材料及圖案形成方法 Download PDF

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Publication number
TWI794121B
TWI794121B TW111123175A TW111123175A TWI794121B TW I794121 B TWI794121 B TW I794121B TW 111123175 A TW111123175 A TW 111123175A TW 111123175 A TW111123175 A TW 111123175A TW I794121 B TWI794121 B TW I794121B
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TW
Taiwan
Prior art keywords
group
carbons
atom
bond
hydrocarbon
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TW111123175A
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English (en)
Chinese (zh)
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TW202307572A (zh
Inventor
畠山潤
藤原敬之
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日商信越化學工業股份有限公司
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Publication of TW202307572A publication Critical patent/TW202307572A/zh
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C317/00Sulfones; Sulfoxides
    • C07C317/02Sulfones; Sulfoxides having sulfone or sulfoxide groups bound to acyclic carbon atoms
    • C07C317/06Sulfones; Sulfoxides having sulfone or sulfoxide groups bound to acyclic carbon atoms of a saturated carbon skeleton containing rings
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C317/00Sulfones; Sulfoxides
    • C07C317/24Sulfones; Sulfoxides having sulfone or sulfoxide groups and doubly-bound oxygen atoms bound to the same carbon skeleton
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G63/00Macromolecular compounds obtained by reactions forming a carboxylic ester link in the main chain of the macromolecule
    • C08G63/02Polyesters derived from hydroxycarboxylic acids or from polycarboxylic acids and polyhydroxy compounds
    • C08G63/06Polyesters derived from hydroxycarboxylic acids or from polycarboxylic acids and polyhydroxy compounds derived from hydroxycarboxylic acids
    • C08G63/065Polyesters derived from hydroxycarboxylic acids or from polycarboxylic acids and polyhydroxy compounds derived from hydroxycarboxylic acids the hydroxy and carboxylic ester groups being bound to aromatic rings
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0046Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2002Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/30Imagewise removal using liquid means
    • G03F7/32Liquid compositions therefor, e.g. developers

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Materials For Photolithography (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW111123175A 2021-06-22 2022-06-22 正型阻劑材料及圖案形成方法 TWI794121B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021-102960 2021-06-22
JP2021102960 2021-06-22

Publications (2)

Publication Number Publication Date
TW202307572A TW202307572A (zh) 2023-02-16
TWI794121B true TWI794121B (zh) 2023-02-21

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW111123175A TWI794121B (zh) 2021-06-22 2022-06-22 正型阻劑材料及圖案形成方法

Country Status (4)

Country Link
US (1) US20230023593A1 (https=)
JP (1) JP7677240B2 (https=)
KR (1) KR102682701B1 (https=)
TW (1) TWI794121B (https=)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201431922A (zh) * 2012-10-26 2014-08-16 羅門哈斯電子材料有限公司 光酸產生化合物及包括該化合物之光阻劑組成物、包括該光阻劑之經塗覆物件及製造物件之方法
TW201506045A (zh) * 2013-07-29 2015-02-16 Shinetsu Chemical Co 抗蝕劑保護膜組成物及圖案形成方法
TW202014800A (zh) * 2018-08-29 2020-04-16 日商信越化學工業股份有限公司 光阻材料及圖案形成方法
US20200272048A1 (en) * 2019-02-27 2020-08-27 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5940455B2 (ja) * 2010-10-15 2016-06-29 Jsr株式会社 レジストパターン形成方法
JP2014219487A (ja) * 2013-05-02 2014-11-20 富士フイルム株式会社 パターン形成方法、電子デバイス及びその製造方法、現像液
JP6427670B2 (ja) * 2015-07-01 2018-11-21 富士フイルム株式会社 パターン形成方法、及び電子デバイスの製造方法
CN106257244B (zh) 2015-11-30 2018-11-23 深圳市华盛昌科技实业股份有限公司 背光仪表
KR101960596B1 (ko) 2016-06-28 2019-07-15 신에쓰 가가꾸 고교 가부시끼가이샤 레지스트 재료 및 패턴 형성 방법
US10871711B2 (en) * 2017-09-25 2020-12-22 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process
US11054742B2 (en) 2018-06-15 2021-07-06 Taiwan Semiconductor Manufacturing Co., Ltd. EUV metallic resist performance enhancement via additives
JP7099418B2 (ja) * 2018-09-18 2022-07-12 信越化学工業株式会社 レジスト材料及びパターン形成方法
JPWO2020175495A1 (ja) * 2019-02-26 2021-11-04 富士フイルム株式会社 塩の製造方法
JP7363687B2 (ja) * 2019-08-14 2023-10-18 信越化学工業株式会社 化学増幅レジスト材料及びパターン形成方法
US11914291B2 (en) * 2019-08-22 2024-02-27 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process
JP7354954B2 (ja) * 2019-09-04 2023-10-03 信越化学工業株式会社 レジスト材料及びパターン形成方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201431922A (zh) * 2012-10-26 2014-08-16 羅門哈斯電子材料有限公司 光酸產生化合物及包括該化合物之光阻劑組成物、包括該光阻劑之經塗覆物件及製造物件之方法
TW201506045A (zh) * 2013-07-29 2015-02-16 Shinetsu Chemical Co 抗蝕劑保護膜組成物及圖案形成方法
TW202014800A (zh) * 2018-08-29 2020-04-16 日商信越化學工業股份有限公司 光阻材料及圖案形成方法
US20200272048A1 (en) * 2019-02-27 2020-08-27 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process

Also Published As

Publication number Publication date
TW202307572A (zh) 2023-02-16
JP2023002465A (ja) 2023-01-10
KR20220170361A (ko) 2022-12-29
JP7677240B2 (ja) 2025-05-15
US20230023593A1 (en) 2023-01-26
KR102682701B1 (ko) 2024-07-05

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