TWI789636B - 縱向氮化物半導體電晶體裝置 - Google Patents

縱向氮化物半導體電晶體裝置 Download PDF

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TWI789636B
TWI789636B TW109134516A TW109134516A TWI789636B TW I789636 B TWI789636 B TW I789636B TW 109134516 A TW109134516 A TW 109134516A TW 109134516 A TW109134516 A TW 109134516A TW I789636 B TWI789636 B TW I789636B
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nitride semiconductor
insulating film
semiconductor layer
electrode
layer
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TW109134516A
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Chinese (zh)
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TW202129970A (zh
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高谷信一郎
白田理一郎
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高谷信一郎
白田理一郎
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/477—Vertical HEMTs or vertical HHMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
    • H—ELECTRICITY
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/478—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] the 2D charge carrier gas being at least partially not parallel to a main surface of the semiconductor body
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H10D30/694—IGFETs having charge trapping gate insulators, e.g. MNOS transistors characterised by the shapes, relative sizes or dispositions of the gate electrodes
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/114—PN junction isolations
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
    • H—ELECTRICITY
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/118—Electrodes comprising insulating layers having particular dielectric or electrostatic properties, e.g. having static charges
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials

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TW109134516A 2020-01-16 2020-10-06 縱向氮化物半導體電晶體裝置 TWI789636B (zh)

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Application Number Priority Date Filing Date Title
JP2020005312A JP2021114496A (ja) 2020-01-16 2020-01-16 縦型窒化物半導体トランジスタ装置
JP2020-005312 2020-03-18

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TW202129970A TW202129970A (zh) 2021-08-01
TWI789636B true TWI789636B (zh) 2023-01-11

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US (1) US11489050B2 (enExample)
JP (1) JP2021114496A (enExample)
CN (1) CN113140629B (enExample)
TW (1) TWI789636B (enExample)

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JP7398885B2 (ja) * 2019-05-30 2023-12-15 ローム株式会社 窒化物半導体装置およびその製造方法
US20220140125A1 (en) * 2020-10-26 2022-05-05 Kabushiki Kaisha Toshiba Semiconductor device
US12218232B2 (en) * 2021-08-25 2025-02-04 Kabushiki Kaisha Toshiba Semiconductor device including compound and nitride members
JP7702345B2 (ja) * 2021-12-22 2025-07-03 信一郎 高谷 電界効果型トランジスタ装置
CN114551584A (zh) * 2022-04-22 2022-05-27 绍兴中芯集成电路制造股份有限公司 氮化镓基异质结场效应晶体管及其制造方法
DE112022007260T5 (de) * 2022-05-19 2025-03-13 Sumitomo Electric Industries, Ltd. Halbleiterchip
CN118872069A (zh) * 2022-05-19 2024-10-29 住友电气工业株式会社 半导体芯片
DE102022209800A1 (de) 2022-09-19 2024-03-21 Robert Bosch Gesellschaft mit beschränkter Haftung Halbleiterelemente mit Feldabschirmung durch Polarisationsdotierung
JPWO2024116612A1 (enExample) * 2022-11-30 2024-06-06

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TW201438320A (zh) * 2013-03-28 2014-10-01 Univ Southern Taiwan Sci & Tec 垂直式氮化物發光二極體的製造方法
US20190296157A1 (en) * 2011-11-11 2019-09-26 Alpha And Omega Semiconductor Incorporated Vertical gallium nitride schottky diode
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JP5122165B2 (ja) * 2007-03-20 2013-01-16 株式会社豊田中央研究所 半導体装置とその製造方法
DE112011103675T5 (de) * 2010-11-04 2013-10-02 Sumitomo Electric Industries, Ltd. Halbleitervorrichtung und Herstellungsverfahren hierfür
JP6035007B2 (ja) * 2010-12-10 2016-11-30 富士通株式会社 Ｍｉｓ型の窒化物半導体ｈｅｍｔ及びその製造方法
US10312361B2 (en) * 2011-06-20 2019-06-04 The Regents Of The University Of California Trenched vertical power field-effect transistors with improved on-resistance and breakdown voltage
JP2014520405A (ja) 2011-06-20 2014-08-21 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 電流アパーチャ垂直電子トランジスタ
JP5646569B2 (ja) * 2012-09-26 2014-12-24 株式会社東芝 半導体装置
KR20150007546A (ko) * 2013-07-11 2015-01-21 서울반도체 주식회사 p형 갈륨나이트라이드 전류장벽층을 갖는 수직형 트랜지스터 및 그 제조방법
JP2015079806A (ja) * 2013-10-16 2015-04-23 三菱電機株式会社 へテロ接合電界効果型トランジスタおよびその製造方法
JP6260435B2 (ja) * 2014-04-25 2018-01-17 株式会社デンソー 半導体装置およびその製造方法
JP2016066641A (ja) * 2014-09-22 2016-04-28 株式会社東芝 半導体装置及び半導体装置の製造方法
JP6444789B2 (ja) * 2015-03-24 2018-12-26 株式会社東芝 半導体装置及びその製造方法
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Publication number Priority date Publication date Assignee Title
TW200849494A (en) * 2007-06-08 2008-12-16 Nanya Technology Corp Vertical NROM cell and method for fabricating the same
US20190296157A1 (en) * 2011-11-11 2019-09-26 Alpha And Omega Semiconductor Incorporated Vertical gallium nitride schottky diode
TW201438320A (zh) * 2013-03-28 2014-10-01 Univ Southern Taiwan Sci & Tec 垂直式氮化物發光二極體的製造方法
US20190334024A1 (en) * 2016-02-24 2019-10-31 Quanzhong Jiang Layered vertical field effect transistor and methods of fabrication

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JP2021114496A (ja) 2021-08-05
US11489050B2 (en) 2022-11-01
CN113140629B (zh) 2024-12-31
US20210226019A1 (en) 2021-07-22
TW202129970A (zh) 2021-08-01
CN113140629A (zh) 2021-07-20

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