JP2021114496A - 縦型窒化物半導体トランジスタ装置 - Google Patents

縦型窒化物半導体トランジスタ装置 Download PDF

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JP2021114496A
JP2021114496A JP2020005312A JP2020005312A JP2021114496A JP 2021114496 A JP2021114496 A JP 2021114496A JP 2020005312 A JP2020005312 A JP 2020005312A JP 2020005312 A JP2020005312 A JP 2020005312A JP 2021114496 A JP2021114496 A JP 2021114496A
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nitride semiconductor
insulating film
semiconductor layer
layer
electrode
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JP2021114496A5 (enExample
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信一郎 高谷
Shinichiro Takatani
信一郎 高谷
理一郎 白田
Riichiro Shirata
理一郎 白田
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Priority to TW109134516A priority patent/TWI789636B/zh
Priority to CN202011230488.9A priority patent/CN113140629B/zh
Priority to US17/143,144 priority patent/US11489050B2/en
Publication of JP2021114496A publication Critical patent/JP2021114496A/ja
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    • H—ELECTRICITY
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/477—Vertical HEMTs or vertical HHMTs
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    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
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    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
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    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
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    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/478—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] the 2D charge carrier gas being at least partially not parallel to a main surface of the semiconductor body
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    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
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    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H10D30/694—IGFETs having charge trapping gate insulators, e.g. MNOS transistors characterised by the shapes, relative sizes or dispositions of the gate electrodes
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    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/114—PN junction isolations
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    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
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    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/118—Electrodes comprising insulating layers having particular dielectric or electrostatic properties, e.g. having static charges
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    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies
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    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
    • H—ELECTRICITY
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    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
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    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 
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    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials

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JP2020005312A 2020-01-16 2020-01-16 縦型窒化物半導体トランジスタ装置 Pending JP2021114496A (ja)

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Application Number Priority Date Filing Date Title
JP2020005312A JP2021114496A (ja) 2020-01-16 2020-01-16 縦型窒化物半導体トランジスタ装置
TW109134516A TWI789636B (zh) 2020-01-16 2020-10-06 縱向氮化物半導體電晶體裝置
CN202011230488.9A CN113140629B (zh) 2020-01-16 2020-11-06 纵向氮化物半导体晶体管装置
US17/143,144 US11489050B2 (en) 2020-01-16 2021-01-06 Vertical nitride semiconductor transistor device

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JP2020005312A JP2021114496A (ja) 2020-01-16 2020-01-16 縦型窒化物半導体トランジスタ装置

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JP2021114496A5 JP2021114496A5 (enExample) 2022-09-06

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023223588A1 (ja) * 2022-05-19 2023-11-23 住友電気工業株式会社 半導体チップ
WO2023223590A1 (ja) * 2022-05-19 2023-11-23 住友電気工業株式会社 半導体チップ
WO2024116612A1 (ja) * 2022-11-30 2024-06-06 パナソニックホールディングス株式会社 窒化物半導体デバイス

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* Cited by examiner, † Cited by third party
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JP7398885B2 (ja) * 2019-05-30 2023-12-15 ローム株式会社 窒化物半導体装置およびその製造方法
US20220140125A1 (en) * 2020-10-26 2022-05-05 Kabushiki Kaisha Toshiba Semiconductor device
US12218232B2 (en) * 2021-08-25 2025-02-04 Kabushiki Kaisha Toshiba Semiconductor device including compound and nitride members
JP7702345B2 (ja) * 2021-12-22 2025-07-03 信一郎 高谷 電界効果型トランジスタ装置
CN114551584A (zh) * 2022-04-22 2022-05-27 绍兴中芯集成电路制造股份有限公司 氮化镓基异质结场效应晶体管及其制造方法
DE102022209800A1 (de) 2022-09-19 2024-03-21 Robert Bosch Gesellschaft mit beschränkter Haftung Halbleiterelemente mit Feldabschirmung durch Polarisationsdotierung

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JP2008235543A (ja) * 2007-03-20 2008-10-02 Toyota Central R&D Labs Inc 半導体装置とその製造方法
WO2012060206A1 (ja) * 2010-11-04 2012-05-10 住友電気工業株式会社 半導体装置およびその製造方法
JP2014067909A (ja) * 2012-09-26 2014-04-17 Toshiba Corp 半導体装置
JP2015019070A (ja) * 2013-07-11 2015-01-29 ソウル セミコンダクター カンパニー リミテッド ｐ型ガリウムナイトライド電流障壁層を有する垂直型トランジスタおよびその製造方法
JP2015211103A (ja) * 2014-04-25 2015-11-24 株式会社デンソー 半導体装置およびその製造方法
JP2016066641A (ja) * 2014-09-22 2016-04-28 株式会社東芝 半導体装置及び半導体装置の製造方法
JP2016181632A (ja) * 2015-03-24 2016-10-13 株式会社東芝 半導体装置及びその製造方法
JP2017123383A (ja) * 2016-01-06 2017-07-13 白田　理一郎 窒化物半導体トランジスタ装置

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JP6035007B2 (ja) * 2010-12-10 2016-11-30 富士通株式会社 Ｍｉｓ型の窒化物半導体ｈｅｍｔ及びその製造方法
US10312361B2 (en) * 2011-06-20 2019-06-04 The Regents Of The University Of California Trenched vertical power field-effect transistors with improved on-resistance and breakdown voltage
JP2014520405A (ja) 2011-06-20 2014-08-21 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 電流アパーチャ垂直電子トランジスタ
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TWI517475B (zh) * 2013-03-28 2016-01-11 南臺科技大學 垂直式氮化物發光二極體的製造方法
JP2015079806A (ja) * 2013-10-16 2015-04-23 三菱電機株式会社 へテロ接合電界効果型トランジスタおよびその製造方法
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JP2008235543A (ja) * 2007-03-20 2008-10-02 Toyota Central R&D Labs Inc 半導体装置とその製造方法
WO2012060206A1 (ja) * 2010-11-04 2012-05-10 住友電気工業株式会社 半導体装置およびその製造方法
JP2014067909A (ja) * 2012-09-26 2014-04-17 Toshiba Corp 半導体装置
JP2015019070A (ja) * 2013-07-11 2015-01-29 ソウル セミコンダクター カンパニー リミテッド ｐ型ガリウムナイトライド電流障壁層を有する垂直型トランジスタおよびその製造方法
JP2015211103A (ja) * 2014-04-25 2015-11-24 株式会社デンソー 半導体装置およびその製造方法
JP2016066641A (ja) * 2014-09-22 2016-04-28 株式会社東芝 半導体装置及び半導体装置の製造方法
JP2016181632A (ja) * 2015-03-24 2016-10-13 株式会社東芝 半導体装置及びその製造方法
JP2017123383A (ja) * 2016-01-06 2017-07-13 白田　理一郎 窒化物半導体トランジスタ装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023223588A1 (ja) * 2022-05-19 2023-11-23 住友電気工業株式会社 半導体チップ
WO2023223590A1 (ja) * 2022-05-19 2023-11-23 住友電気工業株式会社 半導体チップ
WO2024116612A1 (ja) * 2022-11-30 2024-06-06 パナソニックホールディングス株式会社 窒化物半導体デバイス

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US11489050B2 (en) 2022-11-01
CN113140629B (zh) 2024-12-31
US20210226019A1 (en) 2021-07-22
TW202129970A (zh) 2021-08-01
TWI789636B (zh) 2023-01-11
CN113140629A (zh) 2021-07-20

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