TWI781551B - 半導體器件安裝裝置 - Google Patents

半導體器件安裝裝置 Download PDF

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Publication number
TWI781551B
TWI781551B TW110108649A TW110108649A TWI781551B TW I781551 B TWI781551 B TW I781551B TW 110108649 A TW110108649 A TW 110108649A TW 110108649 A TW110108649 A TW 110108649A TW I781551 B TWI781551 B TW I781551B
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Taiwan
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semiconductor
semiconductor device
unit
adhesive
substrate
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TW110108649A
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English (en)
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TW202205480A (zh
Inventor
崔倫華
朴廷敏
李相勳
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南韓商暐寶皮亞股份有限公司
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    • H—ELECTRICITY
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    • H01L24/75—Apparatus for connecting with bump connectors or layer connectors
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    • H01L24/90—Methods for connecting semiconductor or solid state bodies using means for bonding not being attached to, or not being formed on, the body surface to be connected, e.g. pressure contacts using springs or clips
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    • B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
    • B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
    • B22F7/062—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts
    • B22F7/064—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts using an intermediate powder layer
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    • B23K1/0016—Brazing of electronic components
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    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/005—Soldering by means of radiant energy
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    • B23K1/012—Soldering with the use of hot gas
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Abstract

一種半導體器件安裝裝置，包括：基板裝載單元，其供應排列有半導體單元的基板；一個或多個半導體器件裝載器，其供應半導體器件；第一視覺檢測單元，其檢測半導體單元的排列狀態；一個或多個半導體器件拾取器，其將半導體器件安裝在半導體單元上；一個或多個黏合劑固化單元，其固化介於半導體單元和半導體器件之間的黏合劑並進行安裝；基板卸載單元，其取出安裝有半導體器件的基板。其中，黏合劑固化單元將熱源僅有限地傳遞到一個或多個要固化的半導體單元，從而在基板上每個被提供熱源的半導體單元與沒有被提供熱源的半導體單元產生溫差。

Description

半導體器件安裝裝置
本發明涉及一種半導體器件安裝裝置，該裝置可以單獨地固化半導體單元以使由於在固化期間傳遞的熱源而對產品特性的影響最小化，並且通過半導體裝置的內聯以連續地連接至後續製程裝置。
通常，裝夾裝置是使用需要熱源的燒結或焊接來安裝半導體晶片和夾子，以製造半導體。
與此相關的多夾裝置將多個夾子一次性切割並安裝在被點塗導電黏合劑的引線框架上，並在回流爐中成批進行燒結或焊接。
例如，通過將安裝有半導體晶片和夾子的整個基板放置到烘箱或回流爐中，同時施加熱量以固化黏合劑來進行批量生產，雖然這可能易於批量生產，但是對所有半導體器件施加相同的溫度，即使是不需要該溫度的器件或基板的溫度也會升高，從而會對產品性能產生不利影響。
此外，在使用現有烘箱或回流爐焊接的情況下，當焊料熔化時，焊料會像水一樣熔化，雖然無法用肉眼識別，但會在20μm至30μm的範圍內隨機 流動並在特定的流動位置固化，即使將夾子安裝在正確的位置，焊料也會在回流過程中再流動，因此，在一般的回流製程中，必須考慮大約50μm的排列誤差。
另一方面，夾子上升並焊接的區域，即半導體晶片上的金屬焊盤的安裝公差約為50μm，如果金屬焊盤較小，則在安裝一個夾子時可通過視覺檢測識別並安裝，但同時安裝多個時，在之前的半導體晶片安裝製程中，半導體晶片本身可能未排列正中央，導致安裝時出現誤差，因此，如果金屬焊盤小的情況下，即使正確安裝了夾子，也存在脫離金屬焊盤的問題。
因此，與通過烘箱或熔爐將熱量施加到整個基板上進行固化，與同時將相同的熱量施加到所有半導體器件上的現有方式不同，需要一種僅對特定的半導體單元進行有限或單獨的固化，使不需要熱源的半導體器件或基板部分由於熱源引起的特性變化最小化的技術。
現有技術文獻 專利文獻
(專利文獻1)韓國註冊專利公報第1949334號(半導體封裝的夾子接合裝置以及夾子拾取器，20190218)
(專利文獻2)韓國註冊專利公報第1544086號(半導體封裝的裝夾方法以及用於該方法的多夾安裝裝置，20150812)
(專利文獻3)韓國註冊專利公報第1612730號(半導體封裝的裝夾方法以及用於該方法的多夾安裝裝置，20160426)
通過本發明構思要解決的技術問題是提供一種半導體器件安裝裝置，該半導體器件安裝裝置單獨地固化半導體單元，以使由於在固化時傳遞的熱源而對產品特性的影響最小化，並且通過半導體裝置的內聯可以連續地連接至後續的製程裝置。
為實現上述目的，本發明提供一種半導體器件安裝裝置，其作為用於執行半導體封裝件的電連接的半導體器件安裝裝置，包括：基板裝載單元，其用於供應基板，該基板上排列有可製造一個或多個半導體封裝的一個或多個半導體單元；一個或多個半導體器件裝載器，其用於供應半導體器件；第一視覺檢測單元，其用於在所述基板上檢測所述半導體單元的排列狀態、黏合劑施加位置及黏合劑施加與否中的至少一個；一個或多個半導體器件拾取器，其用於將所述半導體器件移送至所述基板並安裝在所述半導體單元上；一個或多個黏合劑固化單元，其用於固化介於所述半導體單元和所述半導體器件之間的黏合劑並進行安裝；以及基板卸載單元，其用於取出基板，所述半導體器件被所述黏合劑固化並安裝在所述基板的所述半導體單元上。其中，所述黏合劑固化單元，將熱源僅有限地傳遞到一個或多個要固化的半導體單元，從而在基板上的每個被提供熱源的半導體單元與沒有被提供熱源的半導體單元產生溫差。
在此，還可以包括一個或多個黏合劑供給單元，所述黏合劑供給單元供應用於將半導體器件黏接到半導體單元的所述黏合劑。
另外，所述基板的Cu含量可以為60%以上。
另外，所述基板可以包括絕緣材料。
在這種情況下，所述基板可以是用於氣密性半導體封裝的基板。
另外，所述半導體器件裝載器可以供應半導體晶片。
在此，所述半導體晶片可以是IGBT、二極體、MOSFET、GaN器件及SiC器件中的至少一種。
另外，所述半導體器件裝載器可以提供電連接到半導體晶片的金屬夾。
另外，所述黏合劑供給單元可以通過注射針向所述半導體單元點塗並供應所述黏合劑，或者從所述半導體單元的上部通過噴射來供應所述黏合劑。
在此，所述黏合劑可以是焊料合金。
另外，所述黏合劑可以是包含Ag或Cu的燒結材料。
在這種情況下，所述焊料合金為糊狀，並且所述糊中包含的焊料顆粒的尺寸可以為25μm或更小。
另外，所述焊料合金可以包括以預定比例混合的Au和Sn。
另外，所述半導體器件拾取器可以提供60℃以上的熱源。
另外，所述黏合劑固化單元可以通過半導體器件拾取器將所述半導體器件安裝在黏合劑上部的同時固化所述黏合劑。
另外，所述黏合劑固化單元可以通過所述半導體器件拾取器將所述半導體器件安裝在黏合劑的上部之後固化所述黏合劑。
在此，所述黏合劑固化單元可以通過焊接或燒結方式來固化所述黏合劑。
另外，所述黏合劑固化單元可以通過鐳射加熱來固化所述黏合劑。
另外，所述黏合劑固化單元可以通過加熱器直接接觸半導體單元以固化所述黏合劑。
另外，所述黏合劑固化單元可以不直接接觸半導體單元，而是通過熱空氣固化所述黏合劑。
在此，所述熱空氣的溫度為50℃至450℃，並且熱空氣可以包含預定比例(%)的氮或氫。
另外，所述黏合劑固化單元在所述基板上可以依次固化每個半導體單元的所述黏合劑。
另外，所述黏合劑固化單元可以對基板上的由兩個或更多個半導體單元組成的每個半導體單元塊，依次固化所述黏合劑。
在此，所述黏合劑固化單元對所述基板上的由兩個或更多個所述半導體單元組成的每一個半導體單元塊，依次固化所述黏合劑，其中，所述黏合劑固化單元對兩個或更多個所述半導體單元塊中的每一個，依次固化所述黏合劑。
另外，所述黏合劑固化單元可以對以一個或多個列或行分組並排列在基板上的每組半導體單元塊，依次固化所述黏合劑。
另外，半導體器件安裝製程可以通過如下步驟執行：通過所述基板裝載單元供給所述基板；通過所述半導體器件拾取器將所述半導體器件安裝在所述半導體單元；通過所述黏合劑固化單元固化介於所述半導體單元和所述半導體器件之間的黏合劑；通過所述基板卸載單元將所述半導體單元上安裝有所述半導體器件的所述基板取出。
另外，半導體器件安裝製程可以通過如下步驟執行：通過所述基板裝載單元供應所述基板；通過所述半導體器件拾取器將第一半導體器件安裝在所述半導體單元上；通過所述半導體器件拾取器將第二半導體器件安裝在所 述半導體單元上；通過所述黏合劑固化單元固化介於所述半導體單元和所述第一半導體器件之間的黏合劑以及介於所述第一半導體器件和所述第二半導體器件之間的黏合劑；以及通過所述基板卸載單元將所述基板取出，其中，所述基板的所述半導體單元上堆疊安裝有所述第一半導體器件和第二半導體器件。
另外，半導體器件安裝製程可以通過如下步驟執行：通過所述基板裝載單元供應所述基板；通過所述半導體器件拾取器將第一半導體器件安裝在所述半導體單元上；通過所述黏合劑固化單元一次固化介於所述半導體單元和所述第一半導體器件之間的黏合劑；通過所述半導體器件拾取器將第二半導體器件安裝在所述半導體單元上；通過所述黏合劑固化單元二次固化介於所述第一半導體器件和所述第二半導體器件之間的黏合劑；以及通過所述基板卸載單元將所述基板取出，其中，所述基板的所述半導體單元上堆疊安裝有所述第一半導體器件和第二半導體器件。
在此，所述半導體器件可以是半導體晶片或金屬夾。
另外，所述半導體器件裝載器可以進一步包括半導體器件排列緩衝部，並且所述半導體器件拾取器可以將從所述半導體器件裝載器移送到所述半導體器件排列緩衝部的所述半導體器件移送到所述半導體單元。
另外，可以進一步包括檢測安裝在所述半導體單元的所述半導體器件位置的第二視覺檢測單元。
另外，半導體單元還可以包括等離子清潔單元，所述等離子清潔單元對所述半導體單元上通過黏合劑固化安裝有所述半導體器件的所述基板，進行等離子清洗，並移送到所述基板卸載單元。
根據本發明，本發明不同於通過烘箱或熔爐將熱量施加到整個基板上成批固化，從而將相同的熱量施加到所有半導體器件的現有方式，本發明將熱源僅有限地傳遞到一個或多個要固化的半導體單元，使在基板上每個被提供熱源的半導體單元和沒有被提供熱源的半導體單元發生溫差，從而具有使在固化期間傳遞的熱源對產品特性的影響最小化的功效。
另外，通過針對每個半導體器件安裝製程單獨地執行黏合劑固化，可以內聯相應的裝置以便與用於其他後續製程的裝置連接，從而提高裝置的運轉效率。
110:基板裝載單元
120A:晶片裝載器
120B:半導體晶片裝載器
120C:金屬夾裝載器
121a:半導體晶片排列緩衝部
121b:金屬夾排列緩衝部
130:第一視覺檢測單元
140A:半導體晶片拾取器
140B:金屬夾拾取器
150:黏合劑固化單元
151:加熱器
160:基板卸載單元
170:黏合劑供給單元
171:注射針
180:第二視覺檢測單元
10:基板
11:半導體單元
12:連接堆體
21:半導體晶片
22:金屬夾
23:晶片
圖1是示出根據本發明實施例的半導體器件安裝裝置的整體構成的平面圖。
圖2是示出將用於圖1的半導體器件安裝裝置的基板分離的視圖。
圖3和圖4是示出根據製程順序將圖1的半導體器件安裝裝置分離的視圖。
圖5是示出半導體器件安裝裝置的另一示例的整體構成的平面圖。
圖6至圖8是示出根據製程順序將圖5的半導體器件安裝裝置分離的視圖。
圖9是示出根據另一示例的半導體器件安裝裝置的整體構成的平面圖。
圖10至圖12是示出根據製程順序將圖9的半導體器件安裝裝置分離的視圖。
在下文中，將參考附圖詳細描述本發明的實施例，以使本發明所屬技術領域具有通常知識者可以容易地實施本發明。本發明可以以各種不同的形式來實現，並且不限於在此描述的實施例。
根據本發明的實施例的半導體器件安裝裝置整體上包括：基板裝載單元110，其用於供應排列有半導體單元11的基板10；一個或多個半導體器件裝載器，其用於供應半導體器件；第一視覺檢測單元130，其用於檢測半導體單元11的排列狀態；一個或多個半導體器件拾取器，其用於將半導體器件安裝在半導體單元11；一個或多個黏合劑固化單元150，其用於固化介於半導體單元11和半導體器件之間的黏合劑並進行安裝；以及基板卸載單元160，其用於取出安裝有半導體器件的基板10。黏合劑固化單元150的主要目的在於，將熱源僅有限地傳遞到一個或多個要固化的半導體單元11，從而在基板10上每個被提供熱源的半導體單元11和沒有被提供熱源的半導體單元11產生溫差，從而最大限度地減少固化過程中傳遞的熱源對產品特性的影響。
在下文中，參考圖1至圖12，將詳細描述用於執行上述半導體封裝的電連接的半導體器件安裝裝置的構成。
首先，基板裝載單元110將排列有能夠製造一個或多個半導體封裝的一個或多個半導體單元11的基板10移送並提供給第一視覺檢測單元130。
在此，基板裝載單元110可配置為：將多個堆疊的基板10依次移送到第一視覺檢測單元130的料盒(參照圖3(a)、圖6(a)、圖6(b)、圖10(a))；或者放置在托盤上依次移送到第一視覺檢測單元130；或者粘貼到載帶上依次移送到第一視覺檢測單元130。
作為參考，儘管未示出，但是可以通過來回滑動的推動器推動基板10的後端來將料盒依次移送到第一視覺檢測單元130。
同時，如圖2(a)中所示，一個或多個半導體單元11可以以列和行的矩陣形式排列，該列和行通過連接堆體12互連。
此外，基板10的Cu含量可以為60%以上，可以包括絕緣材料，可以用於氣密性半導體封裝。
接下來，半導體器件裝載器由一個或多個構成，並提供半導體晶片21或金屬夾22等半導體器件，如圖1、圖5及圖9所示，半導體器件裝載器可配置為：半導體晶片裝載器120B，其在由晶片裝載器120A移送的晶片23上拾取並供應半導體晶片21；以及金屬夾裝載器120C，其拾取並供應電連接半導體晶片21的金屬夾22。
在此，半導體晶片21可以是IGBT、二極體、MOSFET、GaN器件及SiC器件中的至少一種。
同時，半導體器件裝載器還包括半導體器件排列緩衝部121a和金屬夾排列緩衝部121b，半導體器件拾取器可以將從半導體器件裝載器移送到半導體器件排列緩衝部121a和金屬夾排列緩衝部121b的半導體器件移送到半導體單元11。
例如，在半導體晶片21的情況下，通過半導體晶片裝載器120B將半導體晶片21從晶片23移送到半導體晶片排列緩衝部121a並排列，然後通過半導體器件拾取器將半導體晶片21從半導體晶片排列緩衝部121a移送到半導體單元11；在金屬夾22的情況下，可以通過金屬夾裝載器120C將從夾陣列(未示出)切割出的金屬夾22移送到金屬夾排列緩衝部121b並排列，然後，通過半導體器件拾取器將金屬夾22從金屬夾排列緩衝部121b移送到半導體單元11。
接下來，第一視覺檢測單元130結合並形成於與基板10的上部間隔開地形成的XYR軸平臺(未示出)，以檢測並確認半導體單元11在基板10上的排列狀態、黏合劑的施加位置以及是否施加黏合劑等。作為一個實施例，第一視 覺檢測單元130單獨拍攝基板10上的半導體單元11，並檢測半導體單元11的排列狀態以檢查黏合劑的施加位置，檢查黏合劑供給單元170將黏合劑施加到半導體單元11的結果。
在此，上述黏合劑可以在基板裝載製程之前預先施加到基板10的半導體單元11，或者在基板裝載製程之後通過一個或多個黏合劑供給單元170施加到半導體單元11，該黏合劑用於黏接半導體器件。
接下來，半導體器件拾取器由一個或多個組成，並將半導體器件直接從晶片23移送到基板10並將其安裝在半導體單元11上，或者將半導體器件從半導體器件排列緩衝部121a和金屬夾排列緩衝部121b移送到基板10上並安裝在半導體單元11上。
例如，半導體器件拾取器可以配置為：半導體晶片拾取器140A，其利用半導體晶片排列緩衝部121a拾取半導體晶片21(參照圖3(c)、圖6(c)和圖10(c))；金屬夾拾取器140B，其利用金屬夾排列緩衝部121b拾取金屬夾22(參照圖7(f)和圖11(f))。
在此，半導體器件拾取器可以提供60℃以上的熱源以預熱拾取的半導體器件，從而可以促使更快地執行通過黏合劑固化單元150進行的黏合劑固化。
接下來，黏合劑固化單元150由一個或多個構成，其將介於半導體單元11和半導體晶片21及金屬夾22的半導體器件之間的黏合劑通過熱源進行固化並安裝。
另一方面，黏合劑固化單元150僅將熱源有限地移送到一個或多個要固化的半導體單元11，使得在基板10上每個被供應熱源的半導體單元11和 沒有被供應熱源的半導體單元產生溫差，可以使由固化時傳遞的熱源引起的對產品特性的影響最小化。
換句話說，與通過烘箱或熔爐將熱量施加到整個基板並同時固化，從而將相同的熱量施加到所有半導體器件的現有方式不同，可以僅有限地固化半導體單元11，從而使不需要熱源的半導體器件或基板部分由於熱源而引起的特性變化降到最低。
另外，黏合劑固化單元150可根據半導體器件的特性有選擇性地固化黏合劑，例如：通過半導體器件拾取器將半導體器件安裝在黏合劑的上部的同時固化黏合劑；或者通過半導體器件拾取器將半導體器件安裝在黏合劑上部後固化黏合劑。
例如，黏合劑固化單元150可以通過焊接或燒結方式來固化黏合劑。
另外，黏合劑固化單元150可以通過鐳射加熱以非接觸方式固化黏合劑，或者可以由加熱器151直接接觸半導體單元11的接觸方式固化黏合劑。
例如，如圖4(d)所示，黏合劑固化單元150使加熱器151上升並與半導體單元11的下端接觸，從而固化介於半導體單元11與半導體晶片21之間的黏合劑，因此黏合劑固化單元150可以配置為包括半導體器件裝載器、半導體器件拾取器和黏合劑固化單元的單個裝置構成。
或者，儘管未在附圖中示出，但是黏合劑固化單元可以通過熱空氣不直接接觸半導體單元，從而通過間接接觸來固化黏合劑。此時，熱空氣的溫度可以是50℃至450℃，熱空氣可以包含預定比率(%)的，即，預定比率的氮或氫。
或者，如圖7(d)所示，黏合劑固化單元150使加熱器151上升並與半導體單元11的下端接觸，從而固化介於半導體單元11與半導體晶片21之間 的黏合劑，如圖8(g)所示，黏合劑固化單元150使加熱器151上升並與半導體單元11的下端接觸，從而單獨固化介於半導體晶片21和金屬夾22之間的黏合劑，從而按每個半導體晶片21和金屬夾22黏接製程單獨執行黏合劑固化，使執行安裝半導體晶片21的一次裝置及執行安裝金屬夾的二次裝置實現內聯，以便於連接至用於其他後續處理的裝置。
即，在通過現有烘箱、熔爐或回流爐進行黏合劑的成批固化的情況下，由於無法與其他裝置連接而難以內聯，相反地，通過在安裝半導體晶片和金屬夾等半導體器件之後將它們單獨固化，可以取得能夠與後續製程裝置連續內聯的功效。
或者，如圖12(h)所示，黏合劑固化單元150使加熱器151上升並與半導體單元11的下端接觸，可以同時固化介於半導體單元11和半導體晶片21以及半導體晶片21和金屬夾22之間的黏合劑，從而可以在金屬夾22的安裝製程之後一併進行黏合劑固化。
在此，例示了用於安裝半導體晶片的一次裝置和用於安裝金屬夾的二次裝置，但本發明不限於此，而是可以連續地內聯用於安裝其他半導體器件的N次裝置。
另外，黏合劑固化單元150可以以各種方式固化基板10，例如，如圖2(b1)所示，黏合劑固化單元150可以依次固化基板10上的每個半導體單元11的黏合劑；或者如圖2(b2)所示，黏合劑固化單元150可以對基板10上的由兩個或更多個半導體單元11組成的每個半導體單元塊，依次固化黏合劑；或者如圖2的(b3)所示，黏合劑固化單元150可以對於兩個或更多個半導體單元塊，依次對每一個固化黏合劑；或者如圖2的(b4、b5和b6)所示，可以對以一個或多個列或行分組並排列在基板上的每組半導體單元塊，依次固化黏合劑。
接下來，基板卸載單元160將基板10取出，並將其提供給後續製程，該基板10的半導體單元11上安裝有通過黏合劑固化安裝的半導體器件。
另一方面，黏合劑供給單元170可以通過注射針171向半導體單元11點塗並供應黏合劑(參照圖3(b))，或者從半導體單元11的上部通過噴嘴(未示出)噴射供應黏合劑。
在此，黏合劑可以是焊料合金或包含Ag或Cu的燒結材料，焊料合金可以包括以預定比例混合的Au和Sn。
另外，焊料合金為糊狀，並且糊中包含的焊料顆粒的尺寸可以為25μm或更小。
同時，如上所述，可以通過構成包括半導體器件裝載器、半導體器件拾取器以及黏合劑固化單元的單獨裝置來執行半導體器件安裝製程，如圖3和圖4所示，可以通過如下步驟執行半導體器件安裝製程：通過基板裝載單元110供給基板10的步驟(a)；通過黏合劑供給單元170將黏合劑施加到半導體單元11的步驟(b)；通過作為半導體器件拾取器即半導體晶片拾取器140A，將半導體器件即半導體晶片21安裝在半導體單元11上的步驟(c)；通過黏合劑固化單元150固化黏合劑的步驟(d)；通過基板卸載單元160將半導體單元11上安裝有半導體器件的基板10取出的步驟(e)。
另外，也可以通過用於安裝半導體晶片的一次裝置和用於安裝金屬夾的二次裝置進行內聯來執行半導體器件的安裝製程。如圖6至圖8所示，可以通過如下步驟執行半導體器件安裝製程：通過基板裝載單元110供給基板10的步驟(a)；通過黏合劑供給單元170將黏合劑施加到半導體單元11的步驟(b)；通過半導體器件拾取器即半導體晶片拾取器140A，將第一半導體器件即半導體晶片21安裝在半導體單元11上的步驟(c)；通過黏合劑固化單元150對黏合劑進行一次固化，並將半導體晶片21安裝到半導體單元11上的步驟(d)；通過黏合 劑供給單元170將黏合劑施加到第一半導體器件上的步驟(e)；通過半導體器件拾取器即金屬夾拾取器140B，將第二半導體器件即金屬夾22安裝在半導體單元11上的步驟(f)；通過黏合劑固化單元150對黏合劑進行二次固化，並將金屬夾22安裝到半導體晶片21的步驟(g)；以及通過基板卸載單元160將基板10取出的步驟(h)，其中，基板10的半導體單元11上堆疊安裝有第一半導體器件和第二半導體器件。
或者，可以通過同時固化分別介於半導體單元11和半導體晶片21之間以及半導體晶片21和金屬夾22之間的黏合劑來執行半導體器件安裝製程。如圖10至圖12所示，可以通過如下步驟執行半導體器件安裝製程：通過基板裝載單元110供給基板10的步驟(a)；通過黏合劑供給單元170將黏合劑施加到半導體單元11的步驟(b)；通過作為半導體器件拾取器的半導體晶片拾取器140A，將第一半導體器件即半導體晶片21安裝在半導體單元11上的步驟(c，d)；通過黏合劑供給單元170將黏合劑施加到第一半導體器件的步驟(e)；通過半導體器件拾取器即金屬夾拾取器140B，將第二半導體器件即金屬夾22安裝在半導體單元11上的步驟(f，g)；通過黏合劑固化單元150固化黏合劑的步驟(h)；以及通過基板卸載單元160將基板10取出的步驟(i)，其中，基板10的半導體單元11上堆疊安裝有第一半導體器件和第二半導體器件。
另一方面，如圖3(c)、圖6(c)、圖7(f)、圖10(c)和圖11(f)所示，可以進一步包括檢測安裝在半導體單元11的半導體器件位置的第二視覺檢測單元180，第二視覺檢測單元180可以由頂部/底部排列視覺攝影機構成，該頂部/底部排列視覺攝影機執行如下檢測：向上分別檢測由半導體晶片拾取器140A排列的半導體晶片21的排列位置以及通過金屬夾拾取器140B排列的金屬夾22的排列位置；向下分別檢測半導體晶片21和金屬夾22在半導體單元11上的安裝位置。
另外，還可以包括等離子清潔單元(未示出)，等離子清潔單元(未示出)對半導體單元11上通過黏合劑固化安裝有半導體器件的基板10進行等離子清洗，從而氣化並去除吸附在半導體晶片21或金屬夾22上的雜質，並移送到基板卸載單元160。
因此，與通過烘箱或熔爐將熱量施加到整個基板並同時固化，將相同的熱量施加到所有半導體器件的現有方式不同，通過如上所述的半導體器件安裝裝置的構成，熱源僅有限地傳遞到所要固化的一個或多個半導體單元，使得每個在基板上被提供熱源的半導體單元和沒有被提供熱源的半導體單元發生溫差，從而使固化時傳遞的熱源對產品特性的影響最小化。並且針對每個半導體器件安裝製程分別執行黏合劑固化，從而內聯相應的裝置，以便於連接用於其它後續製程的裝置。
以上，參照附圖中所示的實施方式描述了本發明。然而，本發明不限於此，並且本發明所屬技術領域具有通常知識者可以在與本發明均等的範圍內進行各種修改或其他實施方式。因此，本發明的真正的保護範圍應由所附申請專利範圍來確定。
110:基板裝載單元
120A:晶片裝載器
120B:半導體晶片裝載器
121a:半導體晶片排列緩衝部
130:第一視覺檢測單元
140A:半導體晶片拾取器
150:黏合劑固化單元
160:基板卸載單元
170:黏合劑供給單元
10:基板
21:半導體晶片
23:晶片

Claims (25)

  1. 一種半導體器件安裝裝置，其執行半導體封裝的電連接，其特徵在於，包括：基板裝載單元，其供應基板，所述基板上排列有可製造一個或多個半導體封裝的一個或多個半導體單元；一個或多個半導體器件裝載器，其供應半導體器件；第一視覺檢測單元，其檢測在所述基板上的所述半導體單元的排列狀態、黏合劑施加位置以及黏合劑施加與否中的一個或多個；一個或多個半導體器件拾取器，其將所述半導體器件移送至所述基板並安裝在所述半導體單元上；一個或多個黏合劑固化單元，其固化介於所述半導體單元和所述半導體器件之間的黏合劑並進行安裝；以及基板卸載單元，其用於取出所述基板，所述半導體器件被所述黏合劑固化並安裝在所述基板的所述半導體單元上，其中，所述黏合劑固化單元，將熱源僅有限地傳遞到一個或多個要固化的所述半導體單元，從而在所述基板上每個被提供熱源的所述半導體單元與沒有被提供熱源的所述半導體單元產生溫差，所述黏合劑固化單元通過所述半導體器件拾取器，將所述半導體器件安裝在所述黏合劑上部的同時固化所述黏合劑，或所述黏合劑固化單元通過所述半導體器件拾取器，將所述半導體器件安裝在所述黏合劑的上部之後固化所述黏合劑， 所述黏合劑固化單元被配置為：包括加熱器，所述加熱器設於安裝有所述半導體器件的所述半導體單元的底部，當固化所述黏合劑時，所述加熱器上升，從而直接接觸所述半導體單元以固化所述黏合劑；其中，所述黏合劑固化單元對所述基板上的由兩個或更多個所述半導體單元組成的每一個半導體單元塊，依次固化所述黏合劑。
  2. 如請求項1所述的半導體器件安裝裝置，其特徵在於，進一步包括一個或多個黏合劑供給單元，所述黏合劑供給單元供應用於將所述半導體器件黏接到所述半導體單元的所述黏合劑。
  3. 如請求項1所述的半導體器件安裝裝置，其特徵在於，所述基板的Cu含量為60%以上。
  4. 如請求項1所述的半導體器件安裝裝置，其特徵在於，所述基板包括絕緣材料。
  5. 如請求項4所述的半導體器件安裝裝置，其特徵在於，所述基板是用於氣密性半導體封裝的基板。
  6. 如請求項1所述的半導體器件安裝裝置，其特徵在於，所述半導體器件裝載器供應半導體晶片。
  7. 如請求項6所述的半導體器件安裝裝置，其特徵在於，所述半導體晶片可以是IGBT、二極體、MOSFET、GaN器件及SiC器件中的一個或多個。
  8. 如請求項1所述的半導體器件安裝裝置，其特徵在於，所述半導體器件裝載器提供電連接到半導體晶片的金屬夾。
  9. 如請求項2所述的半導體器件安裝裝置，其特徵在於，所述黏合劑供給單元通過注射針向所述半導體單元點塗並供應所述黏合劑，或者從所述半導體單元的上部通過噴射來供應所述黏合劑。
  10. 如請求項9所述的半導體器件安裝裝置，其特徵在於，所述黏合劑是焊料合金。
  11. 如請求項9所述的半導體器件安裝裝置，其特徵在於，所述黏合劑是包含Ag或Cu的燒結材料。
  12. 如請求項10所述的半導體器件安裝裝置，其特徵在於，所述焊料合金為糊狀，並且所述糊中包含的焊料顆粒的尺寸為25μm或更小。
  13. 如請求項10所述的半導體器件安裝裝置，其特徵在於，所述焊料合金包括以預定比例混合的Au和Sn。
  14. 如請求項1所述的半導體器件安裝裝置，其特徵在於，所述半導體器件拾取器提供60℃以上的熱源。
  15. 如請求項1所述的半導體器件安裝裝置，其特徵在於，所述黏合劑固化單元通過焊接或燒結方式來固化所述黏合劑。
  16. 如請求項1所述的半導體器件安裝裝置，其特徵在於，所述黏合劑固化單元在所述基板上依次固化每個所述半導體單元的所述黏合劑。
  17. 如請求項1所述的半導體器件安裝裝置，其特徵在於，所述黏合劑固化單元對兩個或更多個所述半導體單元塊中的每一個，依次固化所述黏合劑。
  18. 如請求項1所述的半導體器件安裝裝置，其特徵在於，所述黏合劑固化單元對以一個或多個列或行分組並排列在基板上的每組半導體單元塊，依次固化所述黏合劑。
  19. 如請求項1所述的半導體器件安裝裝置，其特徵在於，所述半導體器件安裝裝置執行如下製程，所述製程步驟包括：通過所述基板裝載單元供應所述基板；通過所述半導體器件拾取器將所述半導體器件安裝在所述半導體單元上；通過所述黏合劑固化單元固化介於所述半導體單元和所述半導體器件之間的黏合劑；通過所述基板卸載單元將所述半導體單元上安裝有所述半導體器件的所述基板取出。
  20. 如請求項1所述的半導體器件安裝裝置，其特徵在於，所述半導體器件安裝裝置執行如下製程，所述製程步驟包括：通過所述基板裝載單元供應所述基板；通過所述半導體器件拾取器將第一半導體器件安裝在所述半導體單元上；通過所述半導體器件拾取器將第二半導體器件安裝在所述半導體單元上；通過所述黏合劑固化單元固化介於所述半導體單元和所述第一半導體器件之間的黏合劑以及介於所述第一半導體器件和所述第二半導體器件之間的黏合劑；以及通過所述基板卸載單元將所述基板取出，其中，所述基板的所述半導體單元上堆疊安裝有所述第一半導體器件和第二半導體器件。
  21. 如請求項1所述的半導體器件安裝裝置，其特徵在於，所述半導體器件安裝裝置執行如下製程，所述製程步驟包括：通過所述基板裝載單元供應所述基板；通過所述半導體器件拾取器將第一半導體器件安裝在所述半導體單元上；通過所述黏合劑固化單元一次固化介於所述半導體單元和所述第一半導體器件之間的黏合劑；通過所述半導體器件拾 取器將第二半導體器件安裝在所述半導體單元上；通過所述黏合劑固化單元二次固化介於所述第一半導體器件和所述第二半導體器件之間的黏合劑；通過所述基板卸載單元將所述基板取出，其中，所述基板的所述半導體單元上堆疊安裝有所述第一半導體器件和第二半導體器件。
  22. 如請求項19至21中任一項所述的半導體器件安裝裝置，其特徵在於，所述半導體器件是半導體晶片或金屬夾。
  23. 如請求項1所述的半導體器件安裝裝置，其特徵在於，所述半導體器件裝載器進一步包括半導體器件排列緩衝部，所述半導體器件拾取器將從所述半導體器件裝載器移送到所述半導體器件排列緩衝部的所述半導體器件移送到所述半導體單元。
  24. 如請求項1所述的半導體器件安裝裝置，其特徵在於，進一步包括檢測安裝在所述半導體單元的所述半導體器件位置的第二視覺檢測單元。
  25. 如請求項1所述的半導體器件安裝裝置，其特徵在於，進一步包括等離子清潔單元，所述等離子清潔單元對所述半導體單元上通過所述黏合劑固化安裝有所述半導體器件的所述基板，進行等離子清洗，並移送到所述基板卸載單元。
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