TWI780324B - 掃描電子顯微術系統、電子光學系統及表徵系統 - Google Patents

掃描電子顯微術系統、電子光學系統及表徵系統 Download PDF

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Publication number
TWI780324B
TWI780324B TW108114249A TW108114249A TWI780324B TW I780324 B TWI780324 B TW I780324B TW 108114249 A TW108114249 A TW 108114249A TW 108114249 A TW108114249 A TW 108114249A TW I780324 B TWI780324 B TW I780324B
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Taiwan
Prior art keywords
deflector
electron
electron beam
optical
trimmed
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TW108114249A
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English (en)
Chinese (zh)
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TW202001970A (zh
Inventor
亞歷克斯 里普金
亞隆 羅森瑟
法藍克 區利塞
約翰 葛林
勞倫斯 穆雷
羅伯特 海尼斯
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美商克萊譚克公司
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Publication of TW202001970A publication Critical patent/TW202001970A/zh
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Publication of TWI780324B publication Critical patent/TWI780324B/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B21/00—Microscopes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1471—Arrangements for directing or deflecting the discharge along a desired path for centering, aligning or positioning of ray or beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1472—Deflecting along given lines
    • H01J37/1474—Scanning means
    • H01J37/1477—Scanning means electrostatic
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B21/00—Microscopes
    • G02B21/36—Microscopes arranged for photographic purposes or projection purposes or digital imaging or video purposes including associated control and data processing arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/153—Electron-optical or ion-optical arrangements for the correction of image defects, e.g. stigmators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/063—Electron sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H01J2237/151—Electrostatic means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/153—Correcting image defects, e.g. stigmators
    • H01J2237/1534—Aberrations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/2448—Secondary particle detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/2449—Detector devices with moving charges in electric or magnetic fields

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Computer Vision & Pattern Recognition (AREA)
TW108114249A 2018-05-02 2019-04-24 掃描電子顯微術系統、電子光學系統及表徵系統 TWI780324B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/969,555 US10438769B1 (en) 2018-05-02 2018-05-02 Array-based characterization tool
US15/969,555 2018-05-02

Publications (2)

Publication Number Publication Date
TW202001970A TW202001970A (zh) 2020-01-01
TWI780324B true TWI780324B (zh) 2022-10-11

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW108114249A TWI780324B (zh) 2018-05-02 2019-04-24 掃描電子顯微術系統、電子光學系統及表徵系統

Country Status (7)

Country Link
US (1) US10438769B1 (https=)
EP (1) EP3765886A4 (https=)
JP (3) JP7271572B2 (https=)
KR (2) KR102608083B1 (https=)
CN (2) CN115047608A (https=)
TW (1) TWI780324B (https=)
WO (1) WO2019213000A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11239048B2 (en) * 2020-03-09 2022-02-01 Kla Corporation Arrayed column detector
WO2022122320A1 (en) * 2020-12-10 2022-06-16 Asml Netherlands B.V. Charged-particle beam apparatus with beam-tilt and methods thereof
JP7680923B2 (ja) * 2021-09-16 2025-05-21 株式会社ニューフレアテクノロジー マルチ電子ビーム検査装置、多極子アレイの制御方法、及びマルチ電子ビーム検査方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020117967A1 (en) * 2001-02-23 2002-08-29 Gerlach Robert L. Electron beam system using multiple electron beams
US20030001095A1 (en) * 2001-07-02 2003-01-02 Schlumberger Technologies, Inc. Method and apparatus for multiple charged particle beams
US20100237240A1 (en) * 2009-03-20 2010-09-23 Physical Electronics USA, Inc. Sample holder apparatus to reduce energy of electrons in an analyzer system and method
TW201511065A (zh) * 2013-08-30 2015-03-16 Hermes Microvision Inc 具有多光軸磁透鏡之多帶電粒子束裝置
US20170084423A1 (en) * 2015-09-21 2017-03-23 Kla-Tencor Corporation Method and System for Noise Mitigation in a Multi-Beam Scanning Electron Microscopy System
TW201721224A (zh) * 2015-09-23 2017-06-16 克萊譚克公司 用於多波束掃描式電子顯微系統之聚焦調整之方法及系統
TW201833968A (zh) * 2016-12-01 2018-09-16 以色列商應用材料以色列公司 用於檢查試樣之方法以及帶電粒子多束裝置

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4390789A (en) * 1981-05-21 1983-06-28 Control Data Corporation Electron beam array lithography system employing multiple parallel array optics channels and method of operation
JPS6293931A (ja) * 1985-10-19 1987-04-30 Nippon Telegr & Teleph Corp <Ntt> 荷電ビ−ム露光装置
EP0281743B1 (de) * 1987-02-02 1994-03-30 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Detektorobjectiv für Rastermikroskope
US4926054A (en) * 1988-03-17 1990-05-15 Ict Integrated Circuit Testing Gesellschaft Fur Halbleiterpruftechnik Mbh Objective lens for focusing charged particles in an electron microscope
JP2775812B2 (ja) * 1989-02-21 1998-07-16 株式会社ニコン 荷電粒子線装置
WO1999034397A1 (en) * 1997-12-23 1999-07-08 Koninklijke Philips Electronics N.V. Sem provided with an electrostatic objective and an electrical scanning device
US6633034B1 (en) * 2000-05-04 2003-10-14 Applied Materials, Inc. Method and apparatus for imaging a specimen using low profile electron detector for charged particle beam imaging apparatus including electrostatic mirrors
DE60105199T2 (de) 2000-12-22 2005-08-11 Fei Co., Hillsboro Sem mit einem sekundärelektronendetektor mit einer zentralelektrode
JP4493495B2 (ja) 2002-07-11 2010-06-30 アプライド マテリアルズ インコーポレイテッド サブミクロン断面を有する構造素子の断面特徴を決定するためのシステム及び方法
AU2003276779A1 (en) * 2002-10-30 2004-05-25 Mapper Lithography Ip B.V. Electron beam exposure system
TWI323004B (en) * 2005-12-15 2010-04-01 Nuflare Technology Inc Charged particle beam writing method and apparatus
JP4977509B2 (ja) * 2007-03-26 2012-07-18 株式会社日立ハイテクノロジーズ 走査電子顕微鏡
JP5107812B2 (ja) * 2008-07-08 2012-12-26 株式会社日立ハイテクノロジーズ 検査装置
DE102008062450B4 (de) * 2008-12-13 2012-05-03 Vistec Electron Beam Gmbh Anordnung zur Beleuchtung eines Substrats mit mehreren individuell geformten Partikelstrahlen zur hochauflösenden Lithographie von Strukturmustern
JP5890652B2 (ja) * 2011-10-28 2016-03-22 株式会社荏原製作所 試料観察装置及び試料観察方法
JP5934965B2 (ja) * 2012-04-26 2016-06-15 国立研究開発法人理化学研究所 電子線装置
US9431209B2 (en) 2014-08-26 2016-08-30 Hermes-Microvision, Inc. Apparatus of plural charged particle beams with multi-axis magnetic lenses
NL2013411B1 (en) * 2014-09-04 2016-09-27 Univ Delft Tech Multi electron beam inspection apparatus.
CN111261481B (zh) * 2015-03-24 2022-12-16 科磊股份有限公司 用于带电粒子显微镜的方法及系统
WO2016182948A1 (en) * 2015-05-08 2016-11-17 Kla-Tencor Corporation Method and system for aberration correction in electron beam system
US10515778B2 (en) * 2016-03-16 2019-12-24 Ngr Inc. Secondary particle detection system of scanning electron microscope
US10497536B2 (en) * 2016-09-08 2019-12-03 Rockwell Collins, Inc. Apparatus and method for correcting arrayed astigmatism in a multi-column scanning electron microscopy system

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020117967A1 (en) * 2001-02-23 2002-08-29 Gerlach Robert L. Electron beam system using multiple electron beams
US20030001095A1 (en) * 2001-07-02 2003-01-02 Schlumberger Technologies, Inc. Method and apparatus for multiple charged particle beams
US20100237240A1 (en) * 2009-03-20 2010-09-23 Physical Electronics USA, Inc. Sample holder apparatus to reduce energy of electrons in an analyzer system and method
TW201511065A (zh) * 2013-08-30 2015-03-16 Hermes Microvision Inc 具有多光軸磁透鏡之多帶電粒子束裝置
US20170084423A1 (en) * 2015-09-21 2017-03-23 Kla-Tencor Corporation Method and System for Noise Mitigation in a Multi-Beam Scanning Electron Microscopy System
TW201721224A (zh) * 2015-09-23 2017-06-16 克萊譚克公司 用於多波束掃描式電子顯微系統之聚焦調整之方法及系統
TW201833968A (zh) * 2016-12-01 2018-09-16 以色列商應用材料以色列公司 用於檢查試樣之方法以及帶電粒子多束裝置

Also Published As

Publication number Publication date
JP2021522659A (ja) 2021-08-30
JP7271572B2 (ja) 2023-05-11
KR102547554B1 (ko) 2023-06-23
US10438769B1 (en) 2019-10-08
WO2019213000A1 (en) 2019-11-07
EP3765886A1 (en) 2021-01-20
JP2023033554A (ja) 2023-03-10
KR20200139257A (ko) 2020-12-11
CN115047608A (zh) 2022-09-13
JP2025061364A (ja) 2025-04-10
CN112136070A (zh) 2020-12-25
CN112136070B (zh) 2022-06-10
KR102608083B1 (ko) 2023-11-29
EP3765886A4 (en) 2022-11-09
TW202001970A (zh) 2020-01-01
JP7745790B2 (ja) 2025-09-29
KR20230037694A (ko) 2023-03-16

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