CN115047608A - 基于阵列的表征工具 - Google Patents

基于阵列的表征工具 Download PDF

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Publication number
CN115047608A
CN115047608A CN202210723696.5A CN202210723696A CN115047608A CN 115047608 A CN115047608 A CN 115047608A CN 202210723696 A CN202210723696 A CN 202210723696A CN 115047608 A CN115047608 A CN 115047608A
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CN
China
Prior art keywords
electron
deflector
optical
electron beam
trim
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202210723696.5A
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English (en)
Chinese (zh)
Inventor
A·利普金德
A·罗森塔尔
F·基莱塞
J·格尔林
L·穆劳伊
R·海恩斯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KLA Corp
Original Assignee
KLA Tencor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KLA Tencor Corp filed Critical KLA Tencor Corp
Publication of CN115047608A publication Critical patent/CN115047608A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1472—Deflecting along given lines
    • H01J37/1474—Scanning means
    • H01J37/1477—Scanning means electrostatic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1471—Arrangements for directing or deflecting the discharge along a desired path for centering, aligning or positioning of ray or beam
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B21/00—Microscopes
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B21/00—Microscopes
    • G02B21/36—Microscopes arranged for photographic purposes or projection purposes or digital imaging or video purposes including associated control and data processing arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/153—Electron-optical or ion-optical arrangements for the correction of image defects, e.g. stigmators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/063—Electron sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H01J2237/151—Electrostatic means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/153—Correcting image defects, e.g. stigmators
    • H01J2237/1534—Aberrations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/2448—Secondary particle detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/2449—Detector devices with moving charges in electric or magnetic fields

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Computer Vision & Pattern Recognition (AREA)
CN202210723696.5A 2018-05-02 2019-04-30 基于阵列的表征工具 Pending CN115047608A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US15/969,555 US10438769B1 (en) 2018-05-02 2018-05-02 Array-based characterization tool
US15/969,555 2018-05-02
CN201980029659.0A CN112136070B (zh) 2018-05-02 2019-04-30 基于阵列的表征工具
PCT/US2019/029764 WO2019213000A1 (en) 2018-05-02 2019-04-30 Array-based characterization tool

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201980029659.0A Division CN112136070B (zh) 2018-05-02 2019-04-30 基于阵列的表征工具

Publications (1)

Publication Number Publication Date
CN115047608A true CN115047608A (zh) 2022-09-13

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
CN202210723696.5A Pending CN115047608A (zh) 2018-05-02 2019-04-30 基于阵列的表征工具
CN201980029659.0A Active CN112136070B (zh) 2018-05-02 2019-04-30 基于阵列的表征工具

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201980029659.0A Active CN112136070B (zh) 2018-05-02 2019-04-30 基于阵列的表征工具

Country Status (7)

Country Link
US (1) US10438769B1 (https=)
EP (1) EP3765886A4 (https=)
JP (3) JP7271572B2 (https=)
KR (2) KR102608083B1 (https=)
CN (2) CN115047608A (https=)
TW (1) TWI780324B (https=)
WO (1) WO2019213000A1 (https=)

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* Cited by examiner, † Cited by third party
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US11239048B2 (en) * 2020-03-09 2022-02-01 Kla Corporation Arrayed column detector
WO2022122320A1 (en) * 2020-12-10 2022-06-16 Asml Netherlands B.V. Charged-particle beam apparatus with beam-tilt and methods thereof
JP7680923B2 (ja) * 2021-09-16 2025-05-21 株式会社ニューフレアテクノロジー マルチ電子ビーム検査装置、多極子アレイの制御方法、及びマルチ電子ビーム検査方法

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US4390789A (en) * 1981-05-21 1983-06-28 Control Data Corporation Electron beam array lithography system employing multiple parallel array optics channels and method of operation
US20020117967A1 (en) * 2001-02-23 2002-08-29 Gerlach Robert L. Electron beam system using multiple electron beams
CN1708826A (zh) * 2002-10-30 2005-12-14 迈普尔平版印刷Ip有限公司 电子束曝光系统
CN107112183A (zh) * 2014-09-04 2017-08-29 代尔夫特工业大学 多电子束检查装置
CN107533943A (zh) * 2015-05-08 2018-01-02 科磊股份有限公司 用于电子束系统中像差校正的方法及系统

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EP0281743B1 (de) * 1987-02-02 1994-03-30 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Detektorobjectiv für Rastermikroskope
US4926054A (en) * 1988-03-17 1990-05-15 Ict Integrated Circuit Testing Gesellschaft Fur Halbleiterpruftechnik Mbh Objective lens for focusing charged particles in an electron microscope
JP2775812B2 (ja) * 1989-02-21 1998-07-16 株式会社ニコン 荷電粒子線装置
WO1999034397A1 (en) * 1997-12-23 1999-07-08 Koninklijke Philips Electronics N.V. Sem provided with an electrostatic objective and an electrical scanning device
US6633034B1 (en) * 2000-05-04 2003-10-14 Applied Materials, Inc. Method and apparatus for imaging a specimen using low profile electron detector for charged particle beam imaging apparatus including electrostatic mirrors
DE60105199T2 (de) 2000-12-22 2005-08-11 Fei Co., Hillsboro Sem mit einem sekundärelektronendetektor mit einer zentralelektrode
US6750455B2 (en) 2001-07-02 2004-06-15 Applied Materials, Inc. Method and apparatus for multiple charged particle beams
JP4493495B2 (ja) 2002-07-11 2010-06-30 アプライド マテリアルズ インコーポレイテッド サブミクロン断面を有する構造素子の断面特徴を決定するためのシステム及び方法
TWI323004B (en) * 2005-12-15 2010-04-01 Nuflare Technology Inc Charged particle beam writing method and apparatus
JP4977509B2 (ja) * 2007-03-26 2012-07-18 株式会社日立ハイテクノロジーズ 走査電子顕微鏡
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DE102008062450B4 (de) * 2008-12-13 2012-05-03 Vistec Electron Beam Gmbh Anordnung zur Beleuchtung eines Substrats mit mehreren individuell geformten Partikelstrahlen zur hochauflösenden Lithographie von Strukturmustern
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US4390789A (en) * 1981-05-21 1983-06-28 Control Data Corporation Electron beam array lithography system employing multiple parallel array optics channels and method of operation
US20020117967A1 (en) * 2001-02-23 2002-08-29 Gerlach Robert L. Electron beam system using multiple electron beams
CN1708826A (zh) * 2002-10-30 2005-12-14 迈普尔平版印刷Ip有限公司 电子束曝光系统
CN107112183A (zh) * 2014-09-04 2017-08-29 代尔夫特工业大学 多电子束检查装置
CN107533943A (zh) * 2015-05-08 2018-01-02 科磊股份有限公司 用于电子束系统中像差校正的方法及系统

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Also Published As

Publication number Publication date
JP2021522659A (ja) 2021-08-30
JP7271572B2 (ja) 2023-05-11
KR102547554B1 (ko) 2023-06-23
US10438769B1 (en) 2019-10-08
WO2019213000A1 (en) 2019-11-07
EP3765886A1 (en) 2021-01-20
JP2023033554A (ja) 2023-03-10
KR20200139257A (ko) 2020-12-11
JP2025061364A (ja) 2025-04-10
CN112136070A (zh) 2020-12-25
CN112136070B (zh) 2022-06-10
KR102608083B1 (ko) 2023-11-29
EP3765886A4 (en) 2022-11-09
TW202001970A (zh) 2020-01-01
TWI780324B (zh) 2022-10-11
JP7745790B2 (ja) 2025-09-29
KR20230037694A (ko) 2023-03-16

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