TWI778007B - 晶圓生成方法 - Google Patents

晶圓生成方法 Download PDF

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Publication number
TWI778007B
TWI778007B TW107100855A TW107100855A TWI778007B TW I778007 B TWI778007 B TW I778007B TW 107100855 A TW107100855 A TW 107100855A TW 107100855 A TW107100855 A TW 107100855A TW I778007 B TWI778007 B TW I778007B
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TW
Taiwan
Prior art keywords
ingot
wafer
crystal sic
single crystal
peeling
Prior art date
Application number
TW107100855A
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English (en)
Chinese (zh)
Other versions
TW201835995A (zh
Inventor
平田和也
山本涼兵
Original Assignee
日商迪思科股份有限公司
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Publication of TW201835995A publication Critical patent/TW201835995A/zh
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Publication of TWI778007B publication Critical patent/TWI778007B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02378—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02598—Microstructure monocrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
TW107100855A 2017-02-16 2018-01-10 晶圓生成方法 TWI778007B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017027113A JP6858586B2 (ja) 2017-02-16 2017-02-16 ウエーハ生成方法
JP2017-027113 2017-12-05

Publications (2)

Publication Number Publication Date
TW201835995A TW201835995A (zh) 2018-10-01
TWI778007B true TWI778007B (zh) 2022-09-21

Family

ID=63191135

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107100855A TWI778007B (zh) 2017-02-16 2018-01-10 晶圓生成方法

Country Status (4)

Country Link
JP (1) JP6858586B2 (ja)
KR (1) KR102350390B1 (ja)
CN (1) CN108447769B (ja)
TW (1) TWI778007B (ja)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7327920B2 (ja) * 2018-09-28 2023-08-16 株式会社ディスコ ダイヤモンド基板生成方法
JP7120903B2 (ja) * 2018-10-30 2022-08-17 浜松ホトニクス株式会社 レーザ加工装置及びレーザ加工方法
US20220009039A1 (en) 2018-10-30 2022-01-13 Hamamatsu Photonics K.K. Laser processing apparatus and laser processing method
US11897056B2 (en) 2018-10-30 2024-02-13 Hamamatsu Photonics K.K. Laser processing device and laser processing method
JP7166893B2 (ja) * 2018-11-21 2022-11-08 株式会社ディスコ ウエーハの生成方法
US11024501B2 (en) 2018-12-29 2021-06-01 Cree, Inc. Carrier-assisted method for parting crystalline material along laser damage region
US10562130B1 (en) 2018-12-29 2020-02-18 Cree, Inc. Laser-assisted method for parting crystalline material
US10576585B1 (en) 2018-12-29 2020-03-03 Cree, Inc. Laser-assisted method for parting crystalline material
US10611052B1 (en) 2019-05-17 2020-04-07 Cree, Inc. Silicon carbide wafers with relaxed positive bow and related methods
JP7443053B2 (ja) 2019-12-26 2024-03-05 株式会社ディスコ レーザー加工装置
JP7368246B2 (ja) * 2020-01-22 2023-10-24 浜松ホトニクス株式会社 レーザ加工装置及びレーザ加工方法
CN111889896B (zh) * 2020-07-02 2022-05-03 松山湖材料实验室 一种超声协同激光的晶锭剥离方法
JP2022096455A (ja) * 2020-12-17 2022-06-29 株式会社ディスコ ウエーハの生成装置
CN112620973B (zh) * 2020-12-18 2023-04-07 西安晟光硅研半导体科技有限公司 一种碳化硅晶片单向三层双向六级台阶切割工艺
CN113714649B (zh) * 2021-08-25 2023-07-14 深圳市大族半导体装备科技有限公司 晶片的制造方法
CN113714650A (zh) * 2021-08-25 2021-11-30 大族激光科技产业集团股份有限公司 晶片的制造方法
CN114932634A (zh) * 2022-04-13 2022-08-23 深圳市米珈来智能装备有限公司 一种晶圆分离的设备以及方法
CN116093006B (zh) * 2023-03-06 2023-07-25 西北电子装备技术研究所(中国电子科技集团公司第二研究所) SiC晶片高低频复合振动加热剥离装置及SiC晶片制备方法

Citations (6)

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JP2013049161A (ja) * 2011-08-30 2013-03-14 Hamamatsu Photonics Kk 加工対象物切断方法
TW201417905A (zh) * 2012-09-21 2014-05-16 Kurita Water Ind Ltd 洗淨方法及洗淨裝置
TW201635363A (zh) * 2015-01-06 2016-10-01 Disco Corp 晶圓的生成方法
TW201639018A (zh) * 2015-02-09 2016-11-01 Disco Corp 晶圓的生成方法
TW201639017A (zh) * 2015-02-09 2016-11-01 Disco Corp 晶圓的生成方法
TW201639016A (zh) * 2015-02-09 2016-11-01 Disco Corp 晶圓的生成方法

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JPS5736282Y2 (ja) * 1976-12-06 1982-08-11
JP2000094221A (ja) 1998-09-24 2000-04-04 Toyo Advanced Technologies Co Ltd 放電式ワイヤソー
JP2007150164A (ja) * 2005-11-30 2007-06-14 Renesas Technology Corp 基板洗浄方法
JPWO2008129982A1 (ja) * 2007-04-19 2010-07-22 株式会社ニコン 基板処理方法及びシステム、並びにデバイス製造方法
EP2706562A3 (de) * 2009-09-01 2014-09-03 EV Group GmbH Vorrichtung und Verfahren zum Ablösen eines Halbleiterwafers von einem Trägersubstrat mittels Kippens eines Filmrahmens
CN103299416A (zh) 2011-01-17 2013-09-11 Ev集团E·索尔纳有限责任公司 用于从载体基质剥离产品基质的方法
DE102014013107A1 (de) * 2013-10-08 2015-04-09 Siltectra Gmbh Neuartiges Waferherstellungsverfahren
JP2015223589A (ja) * 2014-05-26 2015-12-14 株式会社ディスコ ＳｉＣ板状ワーク製造方法
JP6401021B2 (ja) * 2014-11-18 2018-10-03 株式会社荏原製作所 基板洗浄装置、基板処理装置、および基板洗浄方法
JP6399913B2 (ja) 2014-12-04 2018-10-03 株式会社ディスコ ウエーハの生成方法
JP6396853B2 (ja) * 2015-06-02 2018-09-26 信越化学工業株式会社 酸化物単結晶薄膜を備えた複合ウェーハの製造方法
JP6552898B2 (ja) * 2015-07-13 2019-07-31 株式会社ディスコ 多結晶ＳｉＣウエーハの生成方法
JP2017150164A (ja) * 2016-02-22 2017-08-31 フクビ化学工業株式会社 気密保持部材及び気密保持工法

Patent Citations (6)

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Publication number Priority date Publication date Assignee Title
JP2013049161A (ja) * 2011-08-30 2013-03-14 Hamamatsu Photonics Kk 加工対象物切断方法
TW201417905A (zh) * 2012-09-21 2014-05-16 Kurita Water Ind Ltd 洗淨方法及洗淨裝置
TW201635363A (zh) * 2015-01-06 2016-10-01 Disco Corp 晶圓的生成方法
TW201639018A (zh) * 2015-02-09 2016-11-01 Disco Corp 晶圓的生成方法
TW201639017A (zh) * 2015-02-09 2016-11-01 Disco Corp 晶圓的生成方法
TW201639016A (zh) * 2015-02-09 2016-11-01 Disco Corp 晶圓的生成方法

Also Published As

Publication number Publication date
CN108447769B (zh) 2023-06-20
CN108447769A (zh) 2018-08-24
KR102350390B1 (ko) 2022-01-11
JP2018133484A (ja) 2018-08-23
JP6858586B2 (ja) 2021-04-14
KR20180094785A (ko) 2018-08-24
TW201835995A (zh) 2018-10-01

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