TWI778007B - Wafer Creation Method - Google Patents

Wafer Creation Method Download PDF

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TWI778007B
TWI778007B TW107100855A TW107100855A TWI778007B TW I778007 B TWI778007 B TW I778007B TW 107100855 A TW107100855 A TW 107100855A TW 107100855 A TW107100855 A TW 107100855A TW I778007 B TWI778007 B TW I778007B
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ingot
wafer
crystal sic
single crystal
peeling
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TW201835995A (en
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平田和也
山本涼兵
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日商迪思科股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L21/02373—Group 14 semiconducting materials
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    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components

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Abstract

[課題]提供可以從單結晶SiC錠將晶圓效率佳地剝離的晶圓生成方法。 　　[技術內容]本發明的晶圓生成方法，是至少由：將對於單結晶SiC具有透過性的波長的雷射光線(LB)的集光點(FP)而定位在從錠(2)的第一面(4)(端面)的相當於欲生成的晶圓厚度的深度並將雷射光線(LB)照射在錠(2)而形成由使SiC分離成Si及C的改質部(18)及從改質部(18)朝c面同向地形成的龜裂(20)所構成的剝離層(22)的剝離層形成過程；及在形成有剝離層(22)的外周領域的全部或是一部分進一步將雷射光線LB照射使龜裂(20)成長而形成剝離的起頭部(23)的剝離起頭部形成過程；及藉由將錠(2)浸漬在液體(26)中將具有與錠(2)的特有振動數近似的頻率以上的頻率的超音波透過液體(26)朝錠(2)賦予，而以剝離層(22)作為界面將錠(2)的一部分剝離並生成晶圓(34)的晶圓生成過程所構成。[Subject] To provide a wafer generation method that can efficiently peel a wafer from a single crystal SiC ingot. [Technical content] The wafer production method of the present invention is performed at least by positioning a light collection point (FP) of a laser beam (LB) having a wavelength that is transparent to single crystal SiC at the second position from the ingot (2). A modified portion (18) for separating SiC into Si and C is formed by irradiating the ingot (2) with a laser beam (LB) at a depth corresponding to the thickness of the wafer to be produced on one side (4) (end face). and the peeling layer formation process of the peeling layer (22) composed of the cracks (20) formed in the same direction from the modified part (18) to the c-plane; It is a part of the formation process of the peeling starter part (23) by further irradiating the laser light LB to grow the crack (20) to form the peeling starter part (23); and by immersing the ingot (2) in the liquid (26), Ultrasonic waves having a frequency equal to or higher than a frequency similar to the unique vibration number of the ingot (2) are imparted to the ingot (2) through the liquid (26), and a part of the ingot (2) is exfoliated with the peeling layer (22) as an interface to generate The wafer (34) is formed by the wafer generation process.

Description

晶圓生成方法Wafer Creation Method

[0001] 本發明，是有關於從單結晶SiC錠生成晶圓的晶圓生成方法。[0001] The present invention relates to a wafer production method for producing a wafer from a single crystal SiC ingot.

[0002] IC、LSI、LED等的器件，是在將Si(矽)和Al2 O3 (藍寶石)等作為材料的晶圓的表面層疊功能層並藉由分割預定線被區劃而形成。且，功率元件、LED等是在將單結晶SiC(碳化矽)作為材料的晶圓的表面層疊功能層並藉由分割預定線被區劃而形成。形成有器件的晶圓，是藉由切削裝置、雷射加工裝置在分割預定線進行加工而被分割成各器件，被分割的各器件是被利用在行動電話、個人電腦等的電器。 　　[0003] 形成有器件的晶圓，是藉由將一般圓柱形狀的錠由線鋸被薄地切斷而生成。被切斷的晶圓的表面及背面，是藉由研磨而被精加工成鏡面(專利文獻1參照)。但是，將錠由線鋸切斷，將已被切斷的晶圓的表面及背面研磨的話，錠的大部分(70～80%)會被拋棄而具有不經濟的問題。尤其是在單結晶SiC錠中，硬度高，欲由線鋸切斷是困難的，因為需要相當的時間，所以生產性差，並且因為錠的單價高，所以具有效率佳地生成晶圓的課題。 　　[0004] 在此本申請人已提案了，將對於單結晶SiC具有透過性的波長的雷射光線的集光點定位在單結晶SiC錠的內部且將雷射光線照射在單結晶SiC錠而在切斷預定面形成剝離層，從剝離層將晶圓剝離的技術(專利文獻2參照)。但是，從剝離層將晶圓剝離是困難的，而具有生產效率差的問題。 [先前技術文獻] [專利文獻] 　　[0005] 　　[專利文獻1]日本特開2000-94221號公報 　　[專利文獻2]日本特開2016-111143號公報[0002] Devices such as ICs, LSIs, and LEDs are formed by laminating functional layers on the surface of a wafer made of materials such as Si (silicon), Al 2 O 3 (sapphire), and dividing by lines to divide. In addition, power elements, LEDs, and the like are formed by laminating a functional layer on the surface of a wafer made of single-crystal SiC (silicon carbide), and dividing it by a line to divide. The wafer on which the devices are formed is processed by a cutting device or a laser processing device on a line to be divided into individual devices, and each of the divided devices is an electrical appliance used in a mobile phone, a personal computer, or the like. [0003] A wafer on which devices are formed is produced by thinly cutting a generally cylindrical ingot with a wire saw. The front and back surfaces of the cut wafers are polished into mirror surfaces (refer to Patent Document 1). However, when the ingot is cut with a wire saw and the front and back surfaces of the cut wafer are ground, most (70 to 80%) of the ingot is discarded, which is uneconomical. In particular, single-crystal SiC ingots have high hardness and are difficult to cut with a wire saw, and require considerable time, resulting in poor productivity. In addition, the unit price of the ingot is high, so there is a problem in efficiently producing wafers. Here, the present applicant has proposed that a light-collecting point of a laser beam having a wavelength having transmittance to single-crystal SiC is positioned inside a single-crystal SiC ingot, and the single-crystal SiC ingot is irradiated with the laser beam. A technique in which a peeling layer is formed on the plane to be cut, and the wafer is peeled off from the peeling layer (refer to Patent Document 2). However, it is difficult to peel off the wafer from the peeling layer, and there is a problem that the production efficiency is poor. [Prior Art Document] [Patent Document] [0005] [Patent Document 1] Japanese Patent Laid-Open No. 2000-94221 [Patent Document 2] Japanese Patent Laid-Open No. 2016-111143

[本發明所欲解決的課題] 　　[0006] 有鑑於上述事實的本發明的課題，是提供可以從單結晶SiC錠將晶圓效率佳地剝離的晶圓生成方法。 [用以解決課題的手段] 　　[0007] 為了解決上述課題，本發明是提供以下的晶圓生成方法。即，一種晶圓生成方法，是從具有c軸及與c軸垂直交叉的c面的單結晶SiC錠生成晶圓的晶圓生成方法，至少由：將對於單結晶SiC具有透過性的波長的雷射光線的集光點，定位在從單結晶SiC錠的端面的相當於欲生成的晶圓厚度的深度，將雷射光線照射在單結晶SiC錠，而形成由使SiC分離成Si及C的改質部及從改質部朝c面同向地形成的龜裂所構成的剝離層的剝離層形成過程；及在形成有剝離層的外周領域的全部或是一部分進一步將雷射光線照射使龜裂成長而形成剝離的起頭部的剝離起頭部形成過程；及藉由將單結晶SiC錠浸漬在液體中將具有與單結晶SiC錠的特有振動數近似的頻率以上的頻率的超音波透過液體朝單結晶SiC錠賦予，而將剝離層作為界面將單結晶SiC錠的一部分剝離而生成晶圓的晶圓生成過程所構成。 　　[0008] 較佳是，上述與單結晶SiC錠的特有振動數近似的頻率是單結晶SiC錠的特有振動數的0.8倍。該液體是水，設定成可抑制氣泡發生的溫度較佳。水的溫度是0～25℃最佳。在該剝離層形成過程中，單結晶SiC錠的端面的垂線及c軸是一致的情況，在不超過從連續地形成的改質部朝c面同向地形成的龜裂的寬度範圍，將單結晶SiC錠及集光點相對地分度(index)給進將改質部連續地形成將龜裂及龜裂連結使形成剝離層較佳。在該剝離層形成過程中，c軸是對於單結晶SiC錠的端面的垂線傾斜的情況，朝與由c面及端面形成偏角的方向垂直交叉的方向將改質部連續地形成從改質部朝c面同向地形成龜裂，朝形成該偏角的方向由不超過龜裂的寬度範圍將單結晶SiC錠及集光點相對地分度給進，朝與形成該偏角的方向垂直交叉的方向將改質部連續地形成從改質部朝c面同向地將龜裂依序形成而形成剝離層較佳。 [發明的效果] 　　[0009] 本發明所提供的晶圓生成方法，因為是至少由：將對於單結晶SiC具有透過性的波長的雷射光線的集光點，定位在從單結晶SiC錠的端面的相當於欲生成的晶圓厚度的深度，將雷射光線照射在單結晶SiC錠，而形成由使SiC分離成Si及C的改質部及從改質部朝c面同向地形成的龜裂所構成的剝離層的剝離層形成過程；及在形成有剝離層的外周領域的全部或是一部分進一步將雷射光線照射使龜裂成長而形成剝離的起頭部的剝離起頭部形成過程；及藉由將單結晶SiC錠浸漬在液體中，將具有與單結晶SiC錠的特有振動數近似的頻率以上的頻率的超音波透過液體朝單結晶SiC錠賦予，而以剝離層作為界面將單結晶SiC錠的一部分剝離而生成晶圓的晶圓生成過程所構成，所以可以透過剝離的起頭部從單結晶SiC錠將晶圓效率佳地剝離，因此可達成生產性的提高。[Problem to be Solved by the Invention] [0006] In view of the above-mentioned facts, the subject of the present invention is to provide a wafer generation method that can efficiently peel a wafer from a single crystal SiC ingot. [Means for Solving the Problems] [0007] In order to solve the above-mentioned problems, the present invention provides the following wafer production method. That is, a wafer generation method for generating a wafer from a single-crystal SiC ingot having a c-axis and a c-plane perpendicular to the c-axis, comprising at least: The collection point of the laser light is positioned at a depth corresponding to the thickness of the wafer to be formed from the end face of the single crystal SiC ingot, and the single crystal SiC ingot is irradiated with the laser light, and the formation is formed by separating SiC into Si and C. The modified part and the peeling layer formation process of the peeling layer composed of the cracks formed in the same direction from the modified part toward the c-plane; and further irradiating the whole or part of the outer peripheral area where the peeling layer is formed A process of forming a peeling starter part by growing a crack to form a peeling starter part; A sound wave is applied to a single crystal SiC ingot through a liquid, and a part of the single crystal SiC ingot is peeled off with a peeling layer as an interface to form a wafer. [0008] Preferably, the above-mentioned frequency approximate to the unique vibration number of the single crystal SiC ingot is 0.8 times the unique vibration number of the single crystal SiC ingot. The liquid is water, and it is preferable to set the temperature at which the generation of air bubbles can be suppressed. The temperature of the water is 0-25 ℃ best. In the process of forming the peeling layer, when the vertical line and the c-axis of the end face of the single crystal SiC ingot are the same, the width of the crack formed in the same direction from the continuously formed modified portion to the c-plane is not exceeded. It is preferable that the single crystal SiC ingot and the light collecting point are relatively indexed and fed to form the modified portion continuously, to connect the cracks and the cracks, and to form the peeling layer. In this peeling layer formation process, the c-axis is inclined with respect to the vertical line of the end face of the single-crystal SiC ingot, and the modified portion is continuously formed in the direction perpendicular to the direction in which the c-plane and the end face form an off-angle. A crack is formed in the same direction as the c-plane, and the single crystal SiC ingot and the light collecting point are relatively indexed and fed in the direction of forming the off-angle from the width range not exceeding the crack, and the direction of forming the off-angle It is preferable that the modified portion is continuously formed in the direction intersecting perpendicularly, and the cracks are sequentially formed in the same direction from the modified portion toward the c-plane to form the peeling layer. [Effect of the Invention] [0009] The wafer production method provided by the present invention is based on at least positioning the light-collecting point of the laser light having a wavelength that is transparent to single-crystal SiC on the surface of the single-crystal SiC ingot. The depth of the end face corresponding to the thickness of the wafer to be produced is irradiated with a single crystal SiC ingot to form a modified portion that separates SiC into Si and C, and the modified portion is formed in the same direction toward the c-plane. The peeling layer forming process of the peeling layer composed of the cracks; and the peeling starter part which further irradiates the laser light to the whole or part of the outer peripheral area where the peeling layer is formed to grow the cracks and form the peeling starter part The formation process; and by immersing the single crystal SiC ingot in the liquid, the ultrasonic wave having a frequency more than a frequency similar to the unique vibration number of the single crystal SiC ingot is imparted to the single crystal SiC ingot through the liquid, and the exfoliation layer is used as the single crystal SiC ingot. The interface is composed of a wafer generation process in which a part of the single crystal SiC ingot is peeled off to generate a wafer. Therefore, the wafer can be efficiently peeled off from the single crystal SiC ingot through the peeling start portion, so that the productivity can be improved.

[0011] 本發明的晶圓生成方法，是無關於單結晶SiC錠的c軸是否對於端面的垂線傾斜皆可以使用，首先，對於端面的垂線及c軸是一致的單結晶SiC錠的本發明的晶圓生成方法的實施例一邊參照第1圖至第8圖一邊說明。 　　[0012] 第1圖所示的圓柱形狀的六方晶單結晶SiC錠2(以下稱為「錠2」)，是具有：圓形狀的第一面4(端面)、及第一面4的相反側的圓形狀的第二面6、及位於第一面4及第二面6之間的周面8、及從第一面4至第二面6的c軸(＜0001＞方向)、及與c軸垂直交叉的c面({0001}面)。在錠2中，c軸沒有對於第一面4的垂線10傾斜，垂線10及c軸是一致。 　　[0013] 在圖示的實施例中，首先實施，在從第一面4的相當於欲生成的晶圓厚度的深度形成由使SiC分離成Si及C的改質部及從改質部朝c面同向地形成的龜裂所構成的剝離層的剝離層形成過程。剝離層形成過程，是可以使用例如在第2圖顯示其一部分的雷射加工裝置12實施。雷射加工裝置12，是具備：將被加工物保持的挾盤載置台14、及朝被保持在挾盤載置台14的被加工物將脈衝雷射光線LB照射的集光器16。挾盤載置台14，是藉由旋轉手段而以朝上下方向延伸的軸線為中心被旋轉，並且藉由X方向移動手段而朝X方向被進退，藉由Y方向移動手段而朝Y方向被進退(皆未圖示)。集光器16，是包含將從雷射加工裝置12的脈衝雷射光線振盪器被振盪的脈衝雷射光線LB集光並朝被加工物照射用的集光透鏡(皆未圖示)。又，X方向是在第2圖由箭頭X顯示的方向，Y方向是在第2圖由箭頭Y顯示的方向且與X方向垂直交叉的方向。X方向及Y方向所限定的平面是實質上水平。 　　[0014] 在剝離層形成過程中，首先，將黏著劑(例如環氧樹脂系黏著劑)位在錠2的第二面6及挾盤載置台14的上面之間，將錠2固定在挾盤載置台14。或是在挾盤載置台14的上面形成複數吸引孔，在挾盤載置台14的上面生成吸引力將錠2保持也可以。接著，藉由雷射加工裝置12的攝像手段(未圖示)而從第一面4的上方將錠2攝像。接著，依據藉由攝像手段被攝像的錠2的畫像，藉由雷射加工裝置12的X方向移動手段及Y方向移動手段而將挾盤載置台14移動，而調整錠2及集光器16的XY平面中的位置。接著，藉由雷射加工裝置12的集光點位置調整手段(未圖示)而使集光器16昇降，將集光點FP定位在從第一面4的相當於欲生成的晶圓厚度的深度。接著，一邊將錠2及集光點FP相對地移動，一邊將對於單結晶SiC具有透過性的波長的脈衝雷射光線LB從集光器16朝錠2照射來進行改質部形成加工。在圖示的實施例中如第2圖所示，在改質部形成加工中，不將集光點FP移動而對於集光點FP將挾盤載置台14由規定的加工給進速度藉由X方向移動手段而朝X方向加工給進。藉由改質部形成加工，就可以在從第一面4的相當於欲生成的晶圓厚度的深度，將使SiC分離成Si及C的直線狀的改質部18沿著X方向連續地形成，並且如第3圖所示，可以形成從改質部18沿著c面同向地延伸的龜裂20。在第3圖中將以改質部18為中心形成龜裂20的領域由二點鎖線所示。參照第4圖進行說明的話，將改質部18的直徑設成D，將在加工給進方向相鄰接的集光點FP的間隔設成L的話，在具有D＞L的關係(即在加工給進方向也就是X方向相鄰接的改質部18及改質部18是重複的關係)的領域從改質部18沿著c面同向地形成龜裂20。在加工給進方向相鄰接的集光點FP的間隔L，是藉由集光點FP及挾盤載置台14的相對速度V、及脈衝雷射光線LB的反覆頻率F被規定(L=V/F)。在圖示的實施例中，藉由調整：挾盤載置台14對於集光點FP的朝X方向的加工給進速度V、及脈衝雷射光線LB的反覆頻率F，就可以滿足D＞L的關係。 　　[0015] 在剝離層形成過程中接著改質部形成加工之後，在不超過龜裂20的寬度的範圍，將錠2及集光點FP相對地分度(index)給進。在圖示的實施例中在分度給進中，在不超過龜裂20的寬度的範圍，不將集光點FP移動而對於集光點FP將挾盤載置台14藉由Y方向移動手段而朝Y方向只有規定分度量Li分度給進。且，藉由將改質部形成加工及分度給進交互地反覆，將沿著X方向連續地延伸的改質部18在Y方向隔有分度量Li的間隔複數形成，並且將在Y方向相鄰接的龜裂20及龜裂20連結。藉此，可以在從第一面4的相當於欲生成的晶圓厚度的深度，形成由使SiC分離成Si及C的改質部18及從改質部18朝c面同向地形成的龜裂20所構成的從錠2將晶圓剝離用的剝離層22。又，在剝離層形成過程中，藉由將改質部形成加工及分度給進交互地反覆，而在錠2的相同部分將改質部形成加工進行複數次(例如4次)也可以。 　　[0016] 在剝離層形成過程的改質部形成加工中，將錠2及集光點FP相對地移動即可，如第5圖所示，一邊不將集光點FP移動而對於集光點FP將挾盤載置台14從上方所見朝逆時針(順時針也可以)由規定的旋轉速度藉由雷射加工裝置12的旋轉手段而旋轉，一邊將對於單結晶SiC具有透過性的波長的脈衝雷射光線LB從集光器16朝錠2照射也可以。藉此，可以在從第一面4的相當於欲生成的晶圓厚度的深度，沿著錠2的周方向連續地形成使SiC分離成Si及C的環狀的改質部18，並且可以形成從改質部18沿著c面同向地延伸的龜裂20。如上述，將改質部18的直徑設成D，將在加工給進方向相鄰接的集光點FP的間隔設成L的話，在具有D＞L的關係的領域從改質部18沿著c面同向地形成龜裂20，且在加工給進方向相鄰接的集光點FP的間隔L，是藉由集光點FP及挾盤載置台14的相對速度V、及脈衝雷射光線LB的反覆頻率F被規定(L=V/F)的話，第5圖所示的情況時，藉由調整：集光點FP位置中挾盤載置台14對於集光點FP的周速度V、及脈衝雷射光線LB的反覆頻率F，就可以滿足D＞L的關係。 　　[0017] 將改質部形成加工沿著錠2的周方向環狀地進行的情況時，在不超過龜裂20的寬度的範圍，例如，不將集光點FP移動而將挾盤載置台14對於集光點FP藉由X方向移動手段或是Y方向移動手段而朝錠2的徑方向只有規定分度量Li分度給進。且，藉由將改質部形成加工及分度給進交互地反覆，將沿著錠2的周方向連續地延伸的改質部18在錠2的徑方向隔有分度量Li的間隔地複數形成，並且將在錠2的徑方向相鄰接的龜裂20及龜裂20連結。藉此，可以在從第一面4的相當於欲生成的晶圓厚度的深度，形成由使SiC分離成Si及C的改質部18及從改質部18朝c面同向地形成的龜裂20所構成的從錠2將晶圓剝離用的剝離層22。又，第5圖所示的情況時，藉由將改質部形成加工及分度給進交互地反覆，在錠2的相同部分將改質部形成加工進行複數次(例如4次)也可以。 　　[0018] 參照第6圖進行說明。將剝離層形成過程實施之後，實施：在形成有剝離層22的外周領域的全部或是一部分進一步將雷射光線照射使龜裂20成長而形成適宜的寬度Ls的剝離的起頭部23的剝離起頭部形成過程。剝離起頭部形成過程，可以使用上述的雷射加工裝置12實施。在剝離起頭部形成過程中，依據在剝離層形成過程中藉由雷射加工裝置12的攝像手段而被攝像的錠2的畫像，藉由雷射加工裝置12的X方向移動手段及Y方向移動手段，來移動固定了錠2的挾盤載置台14，而將集光器16定位在形成有剝離層22的錠2的外周的上方。集光點FP的上下方向位置，是與剝離層形成過程中的集光點FP的上下方向位置相同，即，從第一面4的相當於欲生成的晶圓厚度的深度。接著，一邊將錠2及集光點FP相對地移動，一邊將對於單結晶SiC具有透過性的波長的脈衝雷射光線LB從集光器16朝錠2照射來進行使龜裂20成長的剝離起頭部形成加工。在圖示的實施例中在剝離起頭部形成加工中，不將集光點FP移動而對於集光點FP將挾盤載置台14由規定的加工給進速度藉由X方向移動手段而朝X方向加工給進。 　　[0019] 在剝離起頭部形成過程中接著剝離起頭部形成加工之後，將錠2及集光點FP相對地分度給進。在圖示的實施例中在分度給進中，不將集光點FP移動而將挾盤載置台14藉由Y方向移動手段對於集光點FP朝Y方向只有規定分度量Li分度給進。剝離起頭部形成過程的分度給進中的分度量，是與剝離層形成過程的分度給進中的分度量相同即可。且，藉由將剝離起頭部形成加工及分度給進交互地反覆，可以在形成有剝離層22的外周領域的全部或是一部分(在圖示的實施例中如第6圖所示，形成有剝離層22的外周領域的一部分)形成剝離的起頭部23。剝離的起頭部23，與剝離層22中的其他的部分相比較，因為脈衝雷射光線LB的照射次數多使強度下降所以剝離容易產生，成為剝離的起點的部分。剝離的起頭部23的寬度Ls(在圖示的實施例中為Y方向的寬度)是10mm程度即可。又，在剝離起頭部形成過程中，藉由將剝離起頭部形成加工及分度給進交互地反覆，在錠2的相同部分將剝離起頭部形成加工進行複數次(例如4次)也可以。且，剝離起頭部形成過程是在剝離層形成過程之前實施也可以。 　　[0020] 在剝離起頭部形成過程的剝離起頭部形成加工中，將錠2及集光點FP相對地移動即可，例如上述的第5圖所示的情況時，一邊不將集光點FP移動而對於集光點FP將挾盤載置台14從上方所見朝逆時針(順時針也可以)由規定的旋轉速度藉由雷射加工裝置12的旋轉手段而旋轉，一邊將對於單結晶SiC具有透過性的波長的脈衝雷射光線LB從集光器16朝錠2照射來使龜裂20成長也可以。 　　[0021] 將剝離起頭部形成加工沿著錠2的周方向環狀地進行的情況時，例如，不將集光點FP移動而將挾盤載置台14對於集光點FP藉由X方向移動手段或是Y方向移動手段而朝錠2的徑方向只有規定分度量Li分度給進。將剝離起頭部形成加工沿著錠2的周方向環狀地進行的情況時，剝離起頭部形成過程的分度給進中的分度量，是與剝離層形成過程的分度給進中的分度量相同即可。將剝離起頭部形成加工沿著錠2的周方向環狀地進行而在形成有剝離層22的外周領域的全部形成了剝離的起頭部23的情況是如第7圖所示。第7圖所示的情況時，剝離的起頭部23的寬度Ls(錠2的徑方向中的寬度)是10mm程度較佳，且，藉由將剝離起頭部形成加工及分度給進交互地反覆，在錠2的相同部分將剝離起頭部形成加工進行複數次(例如4次)也可以。 　　[0022] 將剝離起頭部形成過程實施之後，實施：以剝離層22作為界面將錠2的一部分剝離而生成晶圓的晶圓生成過程。晶圓生成過程，可以使用例如第8圖所示的剝離裝置24實施。剝離裝置24，是具備：收容液體26的液槽28、及被配置於液槽28內的超音波振動板30、及朝超音波振動板30賦予超音波振動的超音波振動賦予手段32。 　　[0023] 參照第8圖持續說明的話，在晶圓生成過程中，首先，將剝離層22及接近剝離的起頭部23的端面也就是第一面4朝向上，將錠2放入液槽28內浸漬在液體26中並且載置在超音波振動板30的上面。接著，將具有與錠2的特有振動數近似的頻率以上的頻率的超音波振動從超音波振動賦予手段32朝超音波振動板30賦予。如此的話，具有與錠2的特有振動數近似的頻率以上的頻率的超音波是從超音波振動板30透過液體26朝錠2被賦予。藉此，可以以剝離的起頭部23為起點以剝離層22作為界面將錠2的一部分效率佳地剝離而生成晶圓34，因此可達成生產性的提高。 　　[0024] 又，與錠2的特有振動數近似的頻率，是藉由將錠2浸漬在液體26中透過液體26朝錠2賦予超音波而以剝離層22作為界面將錠2的一部分剝離時，從比錠2的特有振動數更規定量低的頻率漸漸地將超音波的頻率上昇時，以剝離的起頭部23為起點以剝離層22作為界面的錠2的一部分剝離開始的頻率，且是比錠2的特有振動數更小的頻率。具體而言，是與錠2的特有振動數近似的頻率是錠2的特有振動數的0.8倍程度。且，將晶圓生成過程實施時的液層28內的液體26是水，水的溫度，是設定成從超音波振動賦予手段32朝超音波振動板30被賦予超音波振動時可抑制氣泡發生的溫度較佳。具體而言，水的溫度是設定成0～25℃最佳，藉此使超音波的能量不會被轉換成氣泡，可以有效地朝錠2賦予超音波的能量。 　　[0025] 接著，對於c軸是對於端面的垂線傾斜的單結晶SiC錠中的本發明的晶圓生成方法的實施例一邊參照第9圖至第12圖一邊說明。 　　[0026] 第9圖所示的整體圓柱形狀的六方晶單結晶SiC錠40(以下稱為「錠40」)，是具有：圓形狀的第一面42(端面)、及第一面42的相反側的圓形狀的第二面44、及位於第一面42及第二面44之間的周面46、及從第一面42至第二面44的c軸(＜0001＞方向)、及與c軸垂直交叉的c面({0001}面)。在錠40中，c軸是對於第一面42的垂線48傾斜，由c面及第一面42形成偏角α(例如α=1、3、6度)。將形成偏角α的方向在第9圖由箭頭A所示。且，在錠40的周面46中，形成有顯示結晶方位的矩形狀的第一定向平面50及第二定向平面52。第一定向平面50，是與形成偏角α的方向A平行，第二定向平面52，是與形成偏角α的方向A垂直交叉。如第9圖(b)所示，從垂線48的方向看，第二定向平面52的長度L2，是比第一定向平面50的長度L1更短(L2＜L1)。 　　[0027] 在圖示的實施例中，首先，實施：在從第一面42的相當於欲生成的晶圓厚度的深度形成由使SiC分離成Si及C的改質部及從改質部朝c面同向地形成的龜裂所構成的剝離層的剝離層形成過程。剝離層形成過程，是可以使用上述的雷射加工裝置12實施。在剝離層形成過程中，首先，將黏著劑(例如環氧樹脂系黏著劑)位在錠40的第二面44及挾盤載置台14的上面之間，將錠40固定在挾盤載置台14。或是在挾盤載置台14的上面形成複數吸引孔，在挾盤載置台14的上面生成吸引力將錠40保持也可以。接著，藉由雷射加工裝置12的攝像手段而從第一面42的上方將錠40攝像。接著，依據藉由攝像手段被攝像的錠40的畫像，藉由雷射加工裝置12的X方向移動手段、Y方向移動手段及旋轉手段而將挾盤載置台14移動及旋轉，而將錠40的方向朝規定的方向調整，並且調整錠40及集光器16的XY平面中的位置。將錠40的方向朝規定的方向調整時，如第10圖(a)所示，藉由將第一定向平面50整合在Y方向，並且將第二定向平面52整合在X方向，而將形成偏角α的方向A整合在Y方向，並且將與形成偏角α的方向A垂直交叉的方向整合在X方向。接著，藉由雷射加工裝置12的集光點位置調整手段而將集光器16昇降，而將集光點FP定位在從第一面42的相當於欲生成的晶圓厚度的深度。接著，一邊朝和與形成偏角α的方向A垂直交叉的方向整合的X方向將錠40及集光點FP相對地移動，一邊將對於單結晶SiC具有透過性的波長的脈衝雷射光線LB從集光器16朝錠40照射來進行改質部形成加工。在圖示的實施例中如第10圖所示，在改質部形成加工中，不將集光點FP移動而對於集光點FP將挾盤載置台14由規定的加工給進速度藉由X方向移動手段而朝X方向加工給進。藉由改質部形成加工，就可以在從第一面42的相當於欲生成的晶圓厚度的深度，將使SiC分離成Si及C的直線狀的改質部18沿著與形成偏角α的方向A垂直交叉的方向(X方向)連續地形成，並且如第11圖所示，可以形成從改質部54沿著c面同向地延伸的龜裂56。如上述，將改質部54的直徑設成D，將在加工給進方向相鄰接的集光點FP的間隔設成L的話，在具有D＞L的關係的領域從改質部54沿著c面同向地形成龜裂56，且在加工給進方向相鄰接的集光點FP的間隔L，是藉由集光點FP及挾盤載置台14的相對速度V、及脈衝雷射光線LB的反覆頻率F被規定(L=V/F)的話，在本實施例中，是藉由調整：挾盤載置台14對於集光點FP的朝X方向的加工給進速度V、及脈衝雷射光線LB的反覆頻率F，就可以滿足D＞L的關係。 　　[0028] 在剝離層形成過程中接著改質部形成加工之後，在不超過龜裂56的寬度的範圍，朝整合在形成偏角α的方向A的Y方向將錠40及集光點FP相對地分度給進。在圖示的實施例中在分度給進中，在不超過龜裂56的寬度的範圍，不將集光點FP移動而對於集光點FP將挾盤載置台14藉由Y方向移動手段而朝Y方向只有規定分度量Li’分度給進。且，藉由將改質部形成加工及分度給進交互地反覆，而將沿著與形成偏角α的方向A垂直交叉的方向連續地延伸的改質部54，在形成偏角α的方向A隔有分度量Li’的間隔地複數形成，並且將在形成偏角α的方向A相鄰接的龜裂56及龜裂56連結。藉此，可以在從第一面42的相當於欲生成的晶圓厚度的深度，形成從由使SiC分離成Si及C的改質部54及從改質部54朝c面同向地形成的龜裂56所構成的錠40將晶圓剝離用的剝離層58。又，在剝離層形成過程中，藉由將改質部形成加工及分度給進交互地反覆，而在錠40的相同部分將改質部形成加工進行複數次(例如4次)也可以。 　　[0029] 參照第12圖進行說明。將剝離層形成過程實施之後，實施：在形成有剝離層58的外周領域的全部或是一部分進一步將雷射光線照射使龜裂56成長而形成適宜的寬度Ls’的剝離的起頭部59的剝離起頭部形成過程。剝離起頭部形成過程，可以使用上述的雷射加工裝置12實施。在剝離起頭部形成過程中，在剝離層形成過程中依據藉由雷射加工裝置12的攝像手段而被攝像的錠40的畫像，藉由雷射加工裝置12的X方向移動手段、Y方向移動手段及旋轉手段，而將固定了錠40的挾盤載置台14移動及旋轉，來調整形成了剝離層58的錠40的方向，並且將集光器16定位在錠40的外周的上方。對於錠40的方向，是與剝離層形成過程同樣地，藉由將第一定向平面50整合在Y方向，並且將第二定向平面52整合在X方向，而將形成偏角α的方向A整合在Y方向，並且將與形成偏角α的方向A垂直交叉的方向整合在X方向。且，集光點FP的上下方向位置，是與剝離層形成過程中的集光點FP的上下方向位置相同，即，從第一面42的相當於欲生成的晶圓厚度的深度。接著，一邊朝和與形成偏角α的方向A垂直交叉的方向整合的X方向將錠40及集光點FP相對地移動，一邊進行將對於單結晶SiC具有透過性的波長的脈衝雷射光線LB從集光器16朝錠40照射使龜裂56成長的剝離起頭部形成加工。在圖示的實施例中在剝離起頭部形成加工中，不將集光點FP移動而對於集光點FP將挾盤載置台14由規定的加工給進速度藉由X方向移動手段而朝X方向加工給進。 　　[0030] 在剝離起頭部形成過程中接著剝離起頭部形成加工之後，朝整合在形成偏角α的方向A的Y方向將錠40及集光點FP相對地分度給進。在圖示的實施例中在分度給進中，不將集光點FP移動而對於集光點FP將挾盤載置台14藉由Y方向移動手段而朝Y方向只有規定分度量Li’分度給進。剝離起頭部形成過程的分度給進中的分度量，是與剝離層形成過程的分度給進中的分度量相同即可。且，藉由將剝離起頭部形成加工及分度給進交互地反覆，就可以在形成有剝離層58的外周領域的全部或是一部分(在圖示的實施例中如第12圖所示，形成有剝離層58的外周領域的一部分)形成剝離的起頭部59。剝離的起頭部59，是與剝離層58中的其他的部分相比較，因為脈衝雷射光線LB的照射次數多使強度下降所以剝離容易產生，成為剝離的起點的部分。剝離的起頭部59的寬度Ls(在圖示的實施例中Y方向的寬度)是10mm程度即可。又，在剝離起頭部形成過程中，藉由將剝離起頭部形成加工及分度給進交互地反覆，在錠40的相同部分將剝離起頭部形成加工進行複數次(例如4次)也可以。且，剝離起頭部形成過程是在剝離層形成過程之前實施也可以。 　　[0031] 將剝離起頭部形成過程實施之後，實施：將剝離層58作為界面將錠40的一部分剝離來生成晶圓的晶圓生成過程。晶圓生成過程，可以使用上述的剝離裝置24實施。在晶圓生成過程中，首先，將剝離層58及接近剝離的起頭部59的端面也就是第一面42朝向上，將錠40放入液槽28內浸漬在液體26中並且載置在超音波振動板30的上面。接著，將具有與錠40的特有振動數近似的頻率以上的頻率的超音波振動從超音波振動賦予手段32朝超音波振動板30賦予。如此的話，具有與錠40的特有振動數近似的頻率以上的頻率的超音波是從超音波振動板30透過液體26朝錠40被賦予。藉此，可以以剝離的起頭部59為起點以剝離層58作為界面將錠40的一部分效率佳地剝離並生成晶圓，因此可達成生產性的提高。 　　[0032] 在本實施例中，與錠40的特有振動數近似的頻率，也是藉由將錠40浸漬在液體26中透過液體26朝錠40賦予超音波而以剝離層58作為界面將錠40的一部分剝離時，從比錠40的特有振動數更規定量低的頻率漸漸地使超音波的頻率上昇時，以剝離的起頭部59為起點以剝離層58作為界面的錠40的一部分剝離開始的頻率，且是比錠40的特有振動數更小的頻率。具體而言，是與錠40的特有振動數近似的頻率是錠40的特有振動數的0.8倍程度。且，將晶圓生成過程實施時的液層28內的液體26是水，水的溫度，是設定成從超音波振動賦予手段32朝超音波振動板30被賦予超音波振動時可抑制氣泡發生的溫度較佳。具體而言，水的溫度是設定成0～25℃最佳，藉此使超音波的能量不會被轉換成氣泡，可以有效地朝錠40賦予超音波的能量。 　　[0033] 在此說明，對於與單結晶SiC錠的特有振動數近似的頻率、及收容在剝離裝置的液槽中的液體的溫度，由下述的雷射加工條件下本發明人所進行的實驗的結果。 　　[0034] [雷射加工條件] 　　脈衝雷射光線的波長 ：1064nm 　　反覆頻率F ：60kHz 　　平均輸出 ：1.5W 　　脈衝寬度 ：4ns 　　束點徑 ：3μm 　　集光透鏡的開口數(NA) ：0.65 　　加工給進速度V ：200mm/s 　　[0035] [實驗1]適切的剝離層的形成 　　將脈衝雷射光線的集光點定位在從厚度3mm的單結晶SiC錠的端面的100μm內側將脈衝雷射光線照射在單結晶SiC錠，形成使SiC分離成Si及C的直徑φ17μm的改質部，在加工給進方向由相鄰接的改質部彼此的重疊率R=80%連續地形成改質部，從改質部朝c面同向地形成直徑φ150μm的龜裂。其後，將集光器150μm分度給進同樣地將改質部連續地形成並且形成龜裂而在相當於晶圓的厚度的100μm的深度形成剝離層。又，改質部彼此的重疊率R，是從改質部的直徑D=φ17μm、及在加工給進方向相鄰接的集光點彼此的間隔L，如以下被算出。且，在加工給進方向相鄰接的集光點彼此的間隔L，是如上述，由加工給進速度V (在本實驗中為200mm/s)、及脈衝雷射光線的反覆頻率F (在本實驗中為60kHz)被限定(L=V/F)。

Figure 02_image001
[0036] [實驗2]對於特有振動數的超音波的頻率依存性 　　所求得的厚度3mm的上述單結晶SiC錠的特有振動數是25kHz。在此在實驗2中，將在實驗1形成的剝離層的上述單結晶SiC錠浸漬在25℃的水將賦予的超音波的輸出設成100W，將超音波的頻率上昇至10kHz、15kHz、20kHz、23kHz、25kHz、27kHz、30kHz、40kHz、50kHz、100kHz、120kHz、150kHz，測量以在實驗1形成的剝離層作為界面從上述單結晶SiC錠使晶圓剝離的時間，檢證了頻率依存性。 [實驗2的結果] 　　 頻率 剝離時間 　　10kHz 即使經過10分鐘仍未剝離：NG 　　15kHz 即使經過10分鐘仍未剝離：NG 　　20kHz 由90秒剝離 　　23kHz 由30秒剝離 　　25kHz 由25秒剝離 　　27kHz 由30秒剝離 　　30kHz 由70秒剝離 　　40kHz 由170秒剝離 　　50kHz 由200秒剝離 　　100kHz 由220秒剝離 　　120kHz 由240秒剝離 　　150kHz 由300秒剝離 　　[0037] [實驗3]超音波的輸出依存性 　　在實驗2中將超音波的輸出固定在100W，將超音波的頻率變化，測量從由實驗1形成的剝離層的上述單結晶SiC錠的晶圓的剝離時間，在實驗3中，在各超音波的頻率將超音波的輸出上昇至200W、300W、400W、500W，測量以在實驗1形成的剝離層作為界面使晶圓從上述單結晶SiC錠剝離的時間，檢證了輸出依存性。又，下述「NG」，是與實驗2的結果同樣地，朝單結晶SiC錠開始超音波的賦予之後即使經過10分鐘，晶圓仍未從單結晶SiC錠剝離的意思。 [實驗3的結果] 各輸出的剝離時間 頻率 200W 300W 400W 500W 10kHz NG NG NG NG 15kHz NG NG NG NG 20kHz 50秒 33秒 15秒 6秒 23kHz 16秒 10秒 4秒 3秒 25kHz 3秒 1秒 1秒以下 1秒以下 27kHz 15秒 11秒 5秒 2秒 30kHz 48秒 40秒 18秒 3秒 40kHz 90秒 47秒 23秒 4秒 50kHz 100秒 58秒 24秒 6秒 100kHz 126秒 63秒 26秒 7秒 120kHz 150秒 70秒 27秒 8秒 150kHz 170秒 82秒 42秒 20秒 　　[0038] [實驗4]溫度依存性 　　在實驗4中，使將在實驗1形成的剝離層的上述單結晶SiC錠浸漬的水的溫度從0℃上昇，測量以在實驗1形成的剝離層作為界面使晶圓從上述單結晶SiC錠剝離的時間，檢證了溫度依存性。又，在實驗4中，將超音波的頻率設定成25kHz，將超音波的輸出設定成500W。 [實驗4的結果] 溫度 剝離時間 　　0℃ 0.07秒 　　5℃ 0.09秒 　　10℃ 0.12秒 　　15℃ 0.6秒 　　20℃ 0.8秒 　　25℃ 0.9秒 　　30℃ 3.7秒 　　35℃ 4.2秒 　　40℃ 6.1秒 　　45℃ 7.1秒 　　50℃ 8.2秒 　　[0039] 從實驗2的結果可以確認，以剝離層作為界面從單結晶SiC錠將晶圓剝離用的超音波的頻率是依存於單結晶SiC錠的特有振動數(在本實驗所使用的單結晶SiC錠中為25kHz)，也就是與單結晶SiC錠的特有振動數近似的20kHz(單結晶SiC錠的特有振動數的0.8倍的頻率)。且可以確認，由單結晶SiC錠的特有振動數的附近的20～30kHz (單結晶SiC錠的特有振動數的0.8～1.5倍的頻率)，就可將以剝離層作為界面從單結晶SiC錠使晶圓有效地(由比較短的時間)剝離。且，從實驗3的結果可以確認，即使超過單結晶SiC錠的特有振動數附近的20～30kHz的頻率，也可藉由提高超音波的輸出，以剝離層作為界面從單結晶SiC錠使晶圓是有效地剝離。進一步，從實驗4的結果可以確認，收容在剝離裝置的液槽中的液體是水的情況，水的溫度是超過25℃的話超音波的能量因為會被轉換成氣泡，所以無法以剝離層作為界面從單結晶SiC錠將晶圓有效地剝離。The wafer production method of the present invention can be used regardless of whether the c-axis of the single-crystal SiC ingot is inclined with respect to the vertical line of the end face, first, the present invention of the single-crystal SiC ingot with the same vertical line and c-axis of the end face. The embodiment of the wafer generation method of the invention will be described with reference to FIGS. 1 to 8 . The cylindrically shaped hexagonal single crystal SiC ingot 2 (hereinafter referred to as "ingot 2") shown in FIG. 1 has a circular first surface 4 (end surface) and the opposite side of the first surface 4. The circular second surface 6 on the side, the peripheral surface 8 located between the first surface 4 and the second surface 6, and the c-axis (<0001> direction) from the first surface 4 to the second surface 6, and The c-plane ({0001}-plane) perpendicular to the c-axis. In the ingot 2, the c-axis is not inclined with respect to the vertical line 10 of the first surface 4, and the vertical line 10 and the c-axis coincide. In the embodiment shown in the figure, first, a modified portion for separating SiC into Si and C is formed at a depth corresponding to the thickness of the wafer to be generated from the first surface 4, and the modified portion is formed from the modified portion toward the The peeling layer forming process of the peeling layer composed of the cracks formed in the same direction on the c-plane. The peeling layer formation process can be implemented using, for example, a laser processing apparatus 12 of which a part is shown in FIG. 2 . The laser processing apparatus 12 is provided with the chuck mounting base 14 which holds the workpiece, and the light collector 16 which irradiates the pulsed laser beam LB toward the workpiece held on the chuck mounting base 14 . The pinch plate mounting table 14 is rotated around an axis extending in the up-down direction by the rotating means, advanced and retracted in the X direction by the X-direction moving means, and advanced and retreated in the Y-direction by the Y-direction moving means (None of them are shown). The concentrator 16 includes a condensing lens (not shown) for condensing the pulsed laser beam LB oscillated from the pulsed laser beam oscillator of the laser processing apparatus 12 and irradiating the object to be processed. In addition, the X direction is a direction indicated by arrow X in FIG. 2, and the Y direction is a direction indicated by arrow Y in FIG. 2 and perpendicularly intersecting the X direction. The planes defined by the X and Y directions are substantially horizontal. In the process of forming the peeling layer, first, an adhesive (such as an epoxy resin based adhesive) is positioned between the second surface 6 of the ingot 2 and the upper surface of the pinch plate mounting table 14, and the ingot 2 is fixed on the pinch plate. The disk mounting table 14 . Alternatively, a plurality of suction holes may be formed on the upper surface of the pinch mounting table 14 , and an attractive force may be generated on the upper surface of the pinch mounting table 14 to hold the ingot 2 . Next, the ingot 2 is imaged from above the first surface 4 by the imaging means (not shown) of the laser processing apparatus 12 . Next, according to the image of the ingot 2 captured by the imaging means, the pinch plate mounting table 14 is moved by the X-direction moving means and the Y-direction moving means of the laser processing apparatus 12, and the ingot 2 and the light collector 16 are adjusted. position in the XY plane. Next, the light collector 16 is moved up and down by the light collecting point position adjustment means (not shown) of the laser processing apparatus 12 , and the light collecting point FP is positioned at the thickness of the wafer to be produced from the first surface 4 . depth. Next, while moving the ingot 2 and the light collecting point FP relatively, the modified portion forming process is performed by irradiating the ingot 2 with pulsed laser light LB having a wavelength transparent to single crystal SiC from the light collector 16 . In the illustrated embodiment, as shown in FIG. 2 , in the reformed portion forming process, the light collecting point FP is not moved, and the pinch plate mounting table 14 is moved at a predetermined processing feed speed with respect to the light collecting point FP. Move the means in the X direction to feed in the X direction. By the modified portion forming process, the linear modified portion 18 that separates SiC into Si and C can be continuous along the X direction at a depth corresponding to the thickness of the wafer to be produced from the first surface 4 . As shown in FIG. 3 , cracks 20 extending in the same direction from the modified portion 18 along the c-plane can be formed. In FIG. 3 , the area where the crack 20 is formed with the modified portion 18 as the center is indicated by the two-dot chain line. Referring to FIG. 4 , if the diameter of the reforming portion 18 is D, and the interval between the light collecting points FP adjacent to each other in the machining feed direction is L, the relationship of D>L is satisfied (that is, in the Cracks 20 are formed from the modified portion 18 in the same direction along the c-plane in the area of the modified portion 18 and the modified portion 18 adjacent to each other in the machining feed direction, that is, in the X direction. The interval L between the light collecting points FP adjacent to each other in the machining feed direction is defined by the relative velocity V of the light collecting point FP and the pinch table 14, and the repetition frequency F of the pulsed laser beam LB (L= V/F). In the illustrated embodiment, D>L can be satisfied by adjusting: the processing feed speed V of the chuck mounting table 14 in the X direction with respect to the light collecting point FP, and the repetition frequency F of the pulsed laser beam LB. Relationship. [0015] In the peeling layer forming process, after the reforming part forming process, the ingot 2 and the light collecting point FP are relatively indexed and fed within a range not exceeding the width of the crack 20. In the illustrated embodiment, in the index feeding, the light collecting point FP is not moved within the range not exceeding the width of the crack 20, and the pinch plate 14 is moved by the Y-direction moving means with respect to the light collecting point FP. In the Y-direction, only the specified subscale Li is fed by subdivision. Then, by alternately repeating the reforming part forming process and the index feeding, the reforming part 18 extending continuously along the X direction is formed in plural at intervals of the index amount Li in the Y direction, and the reforming parts 18 are formed in the Y direction at intervals of the index amount Li. The adjacent cracks 20 and the cracks 20 are connected. As a result, the modified portion 18 for separating SiC into Si and C can be formed at a depth corresponding to the thickness of the wafer to be produced from the first surface 4 , and the modified portion 18 formed in the same direction toward the c-plane can be formed. The peeling layer 22 for peeling the wafer from the ingot 2 is constituted by the cracks 20 . In addition, in the peeling layer forming process, by alternately repeating the reforming part forming process and the index feeding, the reforming part forming process may be performed a plurality of times (for example, four times) in the same part of the ingot 2 . In the modified portion forming process of the peeling layer forming process, the ingot 2 and the light collecting point FP can be relatively moved. As shown in FIG. 5, the light collecting point FP is not moved while the light collecting point is The FP rotates the pinch table 14 counterclockwise (or clockwise) as seen from above by the rotation means of the laser processing apparatus 12 at a predetermined rotational speed, and transmits a pulse having a wavelength that is transparent to single crystal SiC. The laser beam LB may be irradiated toward the ingot 2 from the light collector 16 . As a result, the annular modified portion 18 that separates SiC into Si and C can be continuously formed along the circumferential direction of the ingot 2 at a depth corresponding to the thickness of the wafer to be produced from the first surface 4 , and can Cracks 20 extending from the modified portion 18 in the same direction along the c-plane are formed. As described above, if the diameter of the modified portion 18 is D, and the interval between the light collecting points FP adjacent to each other in the machining feed direction is L, the diameter of the modified portion 18 is set to L in the area having the relationship of D>L. The cracks 20 are formed in the same direction on the c-plane, and the interval L between the converging points FP adjacent to each other in the machining feed direction is determined by the relative velocity V of the condensing points FP and the pinch table 14, and the pulse lightning. If the repetition frequency F of the incident light beam LB is specified (L=V/F), in the case shown in FIG. 5, by adjusting: the peripheral speed of the puck mount 14 relative to the light collection point FP in the position of the light collection point FP V and the repetition frequency F of the pulsed laser light LB can satisfy the relationship of D>L. [0017] In the case where the modified portion is formed annularly along the circumferential direction of the ingot 2, within the range not exceeding the width of the crack 20, for example, the pinch plate is placed without moving the light collecting point FP. 14. The light-collecting point FP is indexed and fed only by the predetermined index amount Li in the radial direction of the ingot 2 by the X-direction moving means or the Y-direction moving means. Then, by alternately repeating the reforming part forming process and the index feeding, the reforming parts 18 extending continuously along the circumferential direction of the ingot 2 are plurally separated by the interval of the index amount Li in the radial direction of the ingot 2 The fissures 20 and the fissures 20 adjacent to each other in the radial direction of the ingot 2 are formed and connected. As a result, the modified portion 18 for separating SiC into Si and C can be formed at a depth corresponding to the thickness of the wafer to be produced from the first surface 4 , and the modified portion 18 formed in the same direction toward the c-plane can be formed. The peeling layer 22 for peeling the wafer from the ingot 2 is constituted by the cracks 20 . In addition, in the case shown in FIG. 5, by alternately repeating the reforming part forming process and the index feeding, the reforming part forming process may be carried out a plurality of times (for example, four times) on the same part of the ingot 2 . [0018] The description will be made with reference to FIG. 6 . After the peeling layer forming process is performed, the peeling of the starting portion 23 of the peeling with a suitable width Ls is performed by further irradiating the whole or a part of the outer peripheral region where the peeling layer 22 is formed to grow the crack 20 and form the peeling. Start the head formation process. The lift-off head forming process can be carried out using the above-described laser processing apparatus 12 . During the formation of the lift-off head, the X-direction moving means and the Y-direction of the laser processing device 12 are used according to the image of the ingot 2 captured by the imaging means of the laser processing device 12 during the formation of the release layer. The moving means moves the chuck mounting table 14 on which the ingot 2 is fixed, and positions the light collector 16 above the outer periphery of the ingot 2 on which the peeling layer 22 is formed. The vertical position of the light collecting point FP is the same as the vertical position of the light collecting point FP during the formation of the peeling layer, that is, the depth from the first surface 4 corresponding to the thickness of the wafer to be formed. Next, while the ingot 2 and the light collecting point FP are relatively moved, the pulsed laser beam LB having a wavelength that is transparent to single crystal SiC is irradiated from the light collector 16 to the ingot 2 to perform peeling that grows the crack 20 . The head is formed and processed. In the example shown in the figure, in the forming process of the peeling head, the light collecting point FP is not moved, and the pinch table 14 is moved toward the light collecting point FP by the X-direction moving means at a predetermined processing feed speed. Machining feed in X direction. [0019] The ingot 2 and the light collecting point FP are relatively indexed and fed after the peeling head forming process in the peeling head forming process. In the illustrated embodiment, in the indexing feeding, the light collecting point FP is not moved, but the pinch table 14 is indexed by the Y-direction moving means for the light collecting point FP only by a predetermined index amount Li in the Y direction. Enter. The division amount in the indexing feeding in the peeling head forming process may be the same as the indexing amount in the indexing feeding in the peeling layer forming process. Furthermore, by alternately repeating the peeling head forming process and the index feeding, all or part of the outer peripheral region where the peeling layer 22 is formed (in the illustrated embodiment, as shown in FIG. 6 , A part of the outer peripheral region in which the peeling layer 22 is formed) forms a peeling start portion 23 . The peeling initiation portion 23 is more likely to be peeled than the other portions of the peeling layer 22 because the intensity of the pulsed laser beam LB is decreased due to the number of times of irradiation, and becomes the starting point of peeling. The width Ls (the width in the Y direction in the illustrated embodiment) of the peeled starter portion 23 may be about 10 mm. In addition, in the peeling head forming process, by alternately repeating the peeling head forming process and the index feeding, the peeling head forming process is performed a plurality of times (for example, four times) on the same part of the ingot 2 . Also can. In addition, the peeling-off head forming process may be performed before the peeling-layer forming process. In the peeling-starting head forming process of the peeling-starting head forming process, the ingot 2 and the light-collecting point FP can be relatively moved, for example, in the case of the above-mentioned Fig. 5, the light-collecting point is not collected. The point FP is moved and the pinch table 14 is rotated counterclockwise (or clockwise) as seen from above with respect to the light-collecting point FP by the rotation means of the laser processing apparatus 12 at a predetermined rotational speed, while the single crystal is rotated. The pulsed laser beam LB of a wavelength having transmittance to SiC may be irradiated from the concentrator 16 to the ingot 2 to grow the crack 20 . [0021] When the peeling head forming process is performed annularly along the circumferential direction of the ingot 2, for example, without moving the light collecting point FP, the pinch table 14 is moved in the X direction with respect to the light collecting point FP. The moving means or the Y-direction moving means is indexed and fed only by a predetermined index amount Li in the radial direction of the ingot 2 . When the peeling head forming process is performed annularly along the circumferential direction of the ingot 2, the indexing amount in the indexing feeding in the peeling forming process is the same as the indexing feeding in the peeling layer forming process. The scores are the same. Fig. 7 shows the case where the peeling-off starting portion forming process is annularly performed along the circumferential direction of the ingot 2 and the peeling starting portion 23 is formed in the entire outer peripheral region where the peeling layer 22 is formed. In the case shown in FIG. 7, the width Ls (width in the radial direction of the ingot 2) of the peeling head 23 is preferably about 10 mm, and the peeling head is formed by forming processing and indexing feeding. Alternately, it is possible to perform the peeling-off head forming process in the same part of the ingot 2 a plurality of times (for example, four times). [0022] After the peeling head forming process is performed, a wafer generating process of peeling off a part of the ingot 2 with the peeling layer 22 as an interface to generate a wafer is performed. The wafer generation process can be performed using, for example, the lift-off apparatus 24 shown in FIG. 8 . The peeling device 24 includes a liquid tank 28 that accommodates the liquid 26 , an ultrasonic vibration plate 30 disposed in the liquid tank 28 , and an ultrasonic vibration imparting means 32 for imparting ultrasonic vibration to the ultrasonic vibration plate 30 . Referring to Fig. 8 to continue the description, in the wafer generation process, first, the end face of the peeling layer 22 and the first face 4 close to the peeled starter portion 23 is directed upward, and the ingot 2 is put into the liquid bath. 28 is immersed in the liquid 26 and placed on the upper surface of the ultrasonic vibration plate 30 . Next, ultrasonic vibration having a frequency equal to or higher than the frequency similar to the unique vibration number of the spindle 2 is applied from the ultrasonic vibration applying means 32 to the ultrasonic vibration plate 30 . In this way, the ultrasonic wave having a frequency equal to or higher than the frequency similar to the unique vibration number of the ingot 2 is applied to the ingot 2 through the liquid 26 from the ultrasonic vibration plate 30 . Thereby, a part of the ingot 2 can be efficiently peeled off with the peeling layer 22 as an interface from the peeled starter portion 23 as a starting point, and the wafer 34 can be peeled off, so that the productivity can be improved. In addition, the frequency similar to the unique vibration number of the ingot 2 is when the ingot 2 is immersed in the liquid 26 and the liquid 26 is passed through the liquid 26 to apply ultrasonic waves to the ingot 2, and the peeling layer 22 is used as the interface. When a part of the ingot 2 is peeled off When the frequency of the ultrasonic wave is gradually increased from a frequency lower than the specific vibration frequency of the ingot 2 by a predetermined amount, the frequency at which a part of the ingot 2 is peeled off with the peeling start part 23 as the starting point and the peeling layer 22 as the interface, And it is a frequency smaller than the characteristic vibration number of the ingot 2 . Specifically, the frequency close to the unique vibration number of the ingot 2 is approximately 0.8 times the unique vibration number of the ingot 2 . In addition, the liquid 26 in the liquid layer 28 when the wafer formation process is carried out is water, and the temperature of the water is set so that the generation of air bubbles can be suppressed when ultrasonic vibration is applied from the ultrasonic vibration applying means 32 to the ultrasonic vibration plate 30. temperature is better. Specifically, the temperature of the water is optimally set to 0 to 25° C., so that the energy of the ultrasonic wave is not converted into air bubbles, and the energy of the ultrasonic wave can be effectively imparted to the ingot 2 . [0025] Next, an embodiment of the wafer production method of the present invention in a single crystal SiC ingot in which the c-axis is inclined with respect to the vertical line of the end face will be described with reference to FIGS. 9 to 12. The hexagonal single crystal SiC ingot 40 (hereinafter referred to as "ingot 40") having an overall cylindrical shape shown in FIG. 9 has a circular first surface 42 (end surface) and a first surface 42. The circular second surface 44 on the opposite side, the peripheral surface 46 located between the first surface 42 and the second surface 44, and the c-axis (<0001> direction) from the first surface 42 to the second surface 44, and the c-plane ({0001} plane) perpendicular to the c-axis. In the ingot 40, the c-axis is inclined with respect to the vertical line 48 of the first surface 42, and the c-plane and the first surface 42 form an off-angle α (eg, α=1, 3, 6 degrees). The direction in which the declination angle α will be formed is indicated by arrow A in FIG. 9 . In addition, on the peripheral surface 46 of the ingot 40 , rectangular first orientation planes 50 and second orientation planes 52 are formed which show the crystal orientation. The first orientation plane 50 is parallel to the direction A that forms the off-angle α, and the second orientation plane 52 is perpendicular to the direction A that forms the off-angle α. As shown in FIG. 9(b), when viewed from the direction of the vertical line 48, the length L2 of the second alignment plane 52 is shorter than the length L1 of the first alignment plane 50 (L2<L1). [0027] In the illustrated embodiment, first, it is performed to form a modified portion for separating SiC into Si and C and a secondary modified portion at a depth corresponding to the thickness of the wafer to be produced from the first surface 42. The peeling layer forming process of the peeling layer composed of the cracks formed in the same direction toward the c-plane. The peeling layer formation process can be carried out using the above-described laser processing apparatus 12 . In the process of forming the peeling layer, first, an adhesive (eg, epoxy-based adhesive) is placed between the second surface 44 of the ingot 40 and the upper surface of the pinch mounting table 14, and the ingot 40 is fixed on the pinch mounting table 14. Alternatively, a plurality of suction holes may be formed on the upper surface of the pinch mounting table 14 , and an attractive force may be generated on the upper surface of the pinch mounting table 14 to hold the ingot 40 . Next, the ingot 40 is imaged from above the first surface 42 by the imaging means of the laser processing apparatus 12 . Next, according to the image of the ingot 40 imaged by the imaging means, the chucking table 14 is moved and rotated by the X-direction moving means, the Y-direction moving means, and the rotating means of the laser processing apparatus 12, and the ingot 40 is moved and rotated. The direction is adjusted in a predetermined direction, and the positions in the XY plane of the ingot 40 and the light collector 16 are adjusted. When the direction of the ingot 40 is adjusted in a predetermined direction, as shown in Fig. 10(a), by aligning the first orientation plane 50 in the Y direction and the second orientation plane 52 in the X direction, the The direction A forming the deflection angle α is integrated in the Y direction, and the direction perpendicular to the direction A forming the deflection angle α is integrated in the X direction. Next, the light collector 16 is moved up and down by the light collection point position adjustment means of the laser processing apparatus 12 to position the light collection point FP at a depth corresponding to the thickness of the wafer to be produced from the first surface 42 . Next, while moving the ingot 40 and the light collecting point FP relatively in the X direction that is aligned with the direction perpendicular to the direction A that forms the off-angle α, the pulsed laser beam LB having a wavelength that is transparent to single crystal SiC is emitted. The modified portion forming process is performed by irradiating the ingot 40 from the light collector 16 . In the illustrated embodiment, as shown in FIG. 10 , in the reformed portion forming process, the light collecting point FP is not moved, and the pinch table 14 is moved at a predetermined processing feed speed with respect to the light collecting point FP. Move the means in the X direction to feed in the X direction. By the modified portion forming process, the linear modified portion 18 for separating SiC into Si and C can be formed at an off-angle along the depth of the first surface 42 corresponding to the thickness of the wafer to be produced. The direction (X direction) perpendicular to the direction A of α is formed continuously, and as shown in FIG. 11 , cracks 56 extending in the same direction from the modified portion 54 along the c-plane can be formed. As described above, if the diameter of the modified portion 54 is D, and the interval between the light collecting points FP adjacent to each other in the machining feed direction is L, the diameter of the modified portion 54 is set to L in the area having the relationship of D>L. The cracks 56 are formed in the same direction on the c-plane, and the interval L between the converging points FP adjacent to each other in the machining feed direction is determined by the relative velocity V of the condensing points FP and the pinch table 14, and the pulse lightning. If the repetition frequency F of the light beam LB is specified (L=V/F), in the present embodiment, by adjusting: the processing feed speed V of the chuck mounting table 14 in the X direction with respect to the light collecting point FP, and the repetition frequency F of the pulsed laser light LB, the relationship of D>L can be satisfied. In the peeling layer forming process, after the reforming part forming process, in the range not exceeding the width of the crack 56, the ingot 40 and the light collecting point FP are opposed to each other in the Y direction integrated in the direction A in which the off-angle α is formed. Ground index feed. In the illustrated embodiment, in the index feeding, within a range not exceeding the width of the crack 56, the light collecting point FP is not moved, and the pinch plate 14 is moved by the Y-direction moving means with respect to the light collecting point FP. In the Y direction, only the specified sub-quantity Li' is fed. Then, by alternately repeating the reforming part forming process and the indexing feeding, the reforming part 54 extending continuously in the direction perpendicular to the direction A that forms the off-angle α is formed in the off-angle α. The direction A is formed in plural at intervals of the fractional amount Li', and connects the fissures 56 and 56 adjacent to each other in the direction A in which the off-angle α is formed. As a result, the modified portion 54 from which SiC is separated into Si and C can be formed at a depth from the first surface 42 corresponding to the thickness of the wafer to be produced, and the modified portion 54 can be formed in the same direction toward the c-plane. The ingot 40 constituted by the cracks 56 is a peeling layer 58 for peeling off the wafer. In addition, in the peeling layer forming process, by alternately repeating the reforming part forming process and the index feeding, the reforming part forming process may be performed a plurality of times (for example, four times) in the same part of the ingot 40 . [0029] The description will be made with reference to FIG. 12 . After the peeling layer forming process is performed, the entire or a part of the outer peripheral region where the peeling layer 58 is formed is further irradiated with laser light to grow the crack 56 to form a peeling start portion 59 of a suitable width Ls'. Peel off the head forming process. The lift-off head forming process can be carried out using the above-described laser processing apparatus 12 . In the peeling head forming process, the X-direction moving means and the Y-direction of the laser processing device 12 are used based on the image of the ingot 40 captured by the imaging means of the laser processing device 12 during the peeling layer forming process. The moving means and the rotating means move and rotate the pinch table 14 to which the ingot 40 is fixed to adjust the direction of the ingot 40 on which the peeling layer 58 is formed, and to position the light collector 16 above the outer periphery of the ingot 40 . The direction of the ingot 40 is the same as the peeling layer formation process, by integrating the first orientation plane 50 in the Y direction and integrating the second orientation plane 52 in the X direction, the direction A of the off-angle α will be formed It is integrated in the Y direction, and the direction perpendicular to the direction A that forms the declination angle α is integrated in the X direction. Further, the vertical position of the light collecting point FP is the same as the vertical position of the light collecting point FP during the formation of the peeling layer, that is, the depth from the first surface 42 corresponding to the thickness of the wafer to be formed. Next, while relatively moving the ingot 40 and the light collecting point FP in the X direction that is aligned with the direction perpendicular to the direction A that forms the off-angle α, a pulsed laser beam having a wavelength that is transparent to single crystal SiC is performed. The LB irradiates the ingot 40 from the concentrator 16 with the peeling-off head forming process that grows the crack 56 . In the example shown in the figure, in the forming process of the peeling head, the light collecting point FP is not moved, and the pinch table 14 is moved toward the light collecting point FP by the X-direction moving means at a predetermined processing feed speed. Machining feed in X direction. [0030] In the peeling head forming process and then after the peeling head forming process, the ingot 40 and the light collecting point FP are relatively indexed and fed in the Y direction integrated in the direction A in which the deflection angle α is formed. In the illustrated embodiment, in the index feeding, the light collecting point FP is not moved, and the pinch plate 14 is moved in the Y direction by the Y direction moving means so as to have only a predetermined index amount Li' minute for the light collecting point FP. Degree feed. The division amount in the indexing feeding in the peeling head forming process may be the same as the indexing amount in the indexing feeding in the peeling layer forming process. Furthermore, by alternately repeating the peeling head forming process and the index feeding, all or a part of the outer peripheral area where the peeling layer 58 is formed (in the illustrated embodiment, as shown in FIG. 12 ) , a part of the outer peripheral region where the peeling layer 58 is formed) forms a peeling start portion 59 . The peeling initiation portion 59 is a portion where peeling is likely to occur because the intensity of the pulsed laser beam LB is decreased due to a large number of times of irradiation of the pulsed laser beam LB compared with other portions in the peeling layer 58 , and becomes the starting point of peeling. The width Ls (the width in the Y direction in the illustrated embodiment) of the peeled starter portion 59 may be about 10 mm. In addition, in the peeling head forming process, by alternately repeating the peeling head forming process and the index feeding, the peeling head forming process is performed a plurality of times (for example, four times) on the same part of the ingot 40 . Also can. In addition, the peeling-off head forming process may be performed before the peeling-layer forming process. [0031] After the lift-off head forming process is carried out, a wafer forming process in which a part of the ingot 40 is peeled off with the lift-off layer 58 as an interface to produce a wafer is carried out. The wafer generation process can be carried out using the lift-off apparatus 24 described above. In the wafer formation process, first, with the end surface of the peeling layer 58 and the first surface 42 close to the peeling head portion 59 facing upward, the ingot 40 is placed in the liquid tank 28 and immersed in the liquid 26 and placed on the The upper surface of the ultrasonic vibration plate 30 . Next, ultrasonic vibration having a frequency equal to or higher than the frequency similar to the unique vibration number of the ingot 40 is applied from the ultrasonic vibration applying means 32 to the ultrasonic vibration plate 30 . In this way, the ultrasonic wave having a frequency equal to or higher than the frequency similar to the unique vibration number of the ingot 40 is applied to the ingot 40 through the liquid 26 from the ultrasonic vibration plate 30 . Thereby, a part of the ingot 40 can be efficiently peeled off with the peeling layer 58 as an interface from the peeled starter portion 59 as a starting point, and a wafer can be formed, so that the productivity can be improved. In the present embodiment, the frequency similar to the unique vibration number of the ingot 40 is also obtained by immersing the ingot 40 in the liquid 26 and applying ultrasonic waves to the ingot 40 through the liquid 26, so that the ingot 40 is separated by the peeling layer 58 as an interface. When a part of the ingot 40 is peeled off, when the frequency of the ultrasonic wave is gradually increased from a frequency lower than the specific vibration frequency of the ingot 40 by a predetermined amount, a part of the ingot 40 is peeled off with the peeling layer 58 as the interface starting from the starting part 59 of the peeling. The starting frequency is smaller than the unique vibration number of the ingot 40 . Specifically, the frequency close to the unique vibration number of the ingot 40 is approximately 0.8 times the unique vibration number of the ingot 40 . In addition, the liquid 26 in the liquid layer 28 when the wafer formation process is carried out is water, and the temperature of the water is set so that the generation of air bubbles can be suppressed when ultrasonic vibration is applied from the ultrasonic vibration applying means 32 to the ultrasonic vibration plate 30. temperature is better. Specifically, the temperature of the water is optimally set to 0 to 25° C., so that the energy of the ultrasonic wave is not converted into air bubbles, and the energy of the ultrasonic wave can be effectively imparted to the ingot 40 . Here, for the frequency similar to the unique vibration number of the single crystal SiC ingot and the temperature of the liquid contained in the liquid tank of the peeling device, the following laser processing conditions were carried out by the present inventors. Results of the experiment. [Laser processing conditions] Wavelength of pulsed laser light: 1064nm Repetition frequency F: 60kHz Average output: 1.5W Pulse width: 4ns Beam spot diameter: 3μm Number of apertures (NA) of collecting lens: 0.65 Processing feed Velocity V: 200 mm/s [0035] [Experiment 1] Formation of a suitable peeling layer The condensing point of the pulsed laser light was positioned 100 μm inside from the end face of the single crystal SiC ingot with a thickness of 3 mm. The pulsed laser light was irradiated on the The single crystal SiC ingot has a modified portion with a diameter of φ17 μm that separates SiC into Si and C, and the modified portion is continuously formed in the machining feed direction with the overlapping ratio R=80% of the adjacent modified portions. Cracks with a diameter of φ150 μm were formed in the modified portion in the same direction toward the c-plane. Then, the optical collector was indexed by 150 μm to form the modified portion continuously and cracks were formed in the same manner to form a peeling layer at a depth of 100 μm corresponding to the thickness of the wafer. The overlapping ratio R of the modified parts is calculated from the diameter D=φ17 μm of the modified parts and the interval L between the converging points adjacent to each other in the machining feed direction, and is calculated as follows. The interval L between the converging points adjacent to each other in the machining feed direction is determined by the machining feed speed V (200 mm/s in this experiment) and the repetition frequency F of the pulsed laser beam ( 60kHz in this experiment) is limited (L=V/F).
Figure 02_image001
[Experiment 2] The characteristic vibration frequency of the single-crystal SiC ingot with a thickness of 3 mm, which was obtained for the frequency dependence of the characteristic vibration number of ultrasonic waves, was 25 kHz. Here, in Experiment 2, the single-crystal SiC ingot of the peeling layer formed in Experiment 1 was immersed in water at 25°C, the output of the ultrasonic wave applied was 100 W, and the frequency of the ultrasonic wave was increased to 10 kHz, 15 kHz, and 20 kHz. , 23 kHz, 25 kHz, 27 kHz, 30 kHz, 40 kHz, 50 kHz, 100 kHz, 120 kHz, and 150 kHz, the time for peeling the wafer from the single-crystal SiC ingot using the peeling layer formed in Experiment 1 as an interface was measured, and the frequency dependence was verified. [Result of Experiment 2] Frequency peeling time 10kHz No peeling even after 10 minutes: NG 15kHz No peeling even after 10 minutes: NG 20kHz Peeling 23kHz by 90 seconds Peeling 25kHz by 30 seconds Peeling 27kHz by 25 seconds Peeling 30kHz by 30 seconds Stripped 40kHz by 70 seconds Stripped 50kHz by 170 seconds Stripped 100kHz by 200 seconds Stripped 120kHz by 220 seconds Stripped 150kHz by 240 seconds Stripped off 300 seconds [0037] [Experiment 3] Ultrasonic output dependency The output was fixed at 100 W, the frequency of the ultrasonic wave was changed, and the peeling time of the wafer from the single-crystal SiC ingot with the peeling layer formed in the experiment 1 was measured. In the experiment 3, the output of the ultrasonic wave was changed at the frequency of each ultrasonic wave. The power was increased to 200W, 300W, 400W, and 500W, and the time for peeling the wafer from the single-crystal SiC ingot using the peeling layer formed in Experiment 1 as an interface was measured, and the output dependence was verified. In addition, the following "NG" means that the wafer was not peeled off from the single crystal SiC ingot even after 10 minutes elapsed after starting the application of the ultrasonic wave to the single crystal SiC ingot, as in the result of Experiment 2. [Result of Experiment 3] Stripping time frequency of each output 200W 300W 400W 500W 10kHz NG NG NG NG 15kHz NG NG NG NG 20kHz 50sec 33sec 15sec 6sec 23kHz 16sec 10sec 4sec 3sec 25kHz 3sec 1sec1 Below 1 second 27kHz 15 seconds 11 seconds 5 seconds 2 seconds 30kHz 48 seconds 40 seconds 18 seconds 3 seconds 40kHz 90 seconds 47 seconds 23 seconds 4 seconds 50kHz 100 seconds 58 seconds 24 seconds 6 seconds 100kHz 126 seconds 63 seconds 26 seconds 7 seconds 120 kHz, 150 seconds, 70 seconds, 27 seconds, 8 seconds, 150 kHz, 170 seconds, 82 seconds, 42 seconds, 20 seconds The temperature of the water was raised from 0°C, and the time for peeling the wafer from the single-crystal SiC ingot using the peeling layer formed in Experiment 1 as an interface was measured to verify the temperature dependence. In Experiment 4, the frequency of the ultrasonic wave was set to 25 kHz, and the output of the ultrasonic wave was set to 500 W. [Results of Experiment 4] Temperature peeling time 0°C 0.07 seconds 5°C 0.09 seconds 10°C 0.12 seconds 15°C 0.6 seconds 20°C 0.8 seconds 25°C 0.9 seconds 30°C 3.7 seconds 35°C 4.2 seconds 40°C 6.1 seconds 45°C 7.1 seconds 50 ℃ 8.2 seconds [0039] From the results of Experiment 2, it can be confirmed that the frequency of the ultrasonic wave used for peeling the wafer from the single crystal SiC ingot with the peeling layer as the interface depends on the unique vibration number of the single crystal SiC ingot (in this experiment. In the single crystal SiC ingot used, 25 kHz), that is, 20 kHz (frequency 0.8 times the unique vibration number of the single crystal SiC ingot) which is similar to the unique vibration number of the single crystal SiC ingot. Furthermore, it was confirmed that from 20 to 30 kHz (frequency 0.8 to 1.5 times the unique vibration number of the single crystal SiC ingot) near the unique vibration number of the single crystal SiC ingot, the separation layer can be used as the interface from the single crystal SiC ingot. The wafer is effectively (in a relatively short period of time) peeled off. In addition, from the results of Experiment 3, it was confirmed that even if the frequency exceeds 20 to 30 kHz, which is around the characteristic vibration number of the single crystal SiC ingot, by increasing the output of the ultrasonic wave, the single crystal SiC ingot can be separated from the single crystal SiC ingot with the exfoliation layer as the interface. The circle is effectively peeled off. Furthermore, from the results of Experiment 4, it was confirmed that when the liquid contained in the liquid tank of the peeling device is water, and the temperature of the water exceeds 25°C, the ultrasonic energy is converted into air bubbles, so the peeling layer cannot be used as a The interface effectively lifts the wafer from the single crystal SiC ingot.

[0040]2‧‧‧端面的垂線及c軸是一致的單結晶SiC錠4‧‧‧第一面(端面)6‧‧‧第二面8‧‧‧周面10‧‧‧垂線12‧‧‧雷射加工裝置14‧‧‧挾盤載置台16‧‧‧集光器18‧‧‧改質部20‧‧‧龜裂22‧‧‧剝離層23‧‧‧剝離的起頭部24‧‧‧剝離裝置26‧‧‧液體28‧‧‧液槽30‧‧‧超音波振動板32‧‧‧超音波振動賦予手段34‧‧‧晶圓40‧‧‧c軸對於端面的垂線傾斜的單結晶SiC錠42‧‧‧第一面(端面)44‧‧‧第二面46‧‧‧周面48‧‧‧垂線50‧‧‧定向平面52‧‧‧定向平面54‧‧‧改質部56‧‧‧龜裂58‧‧‧剝離層59‧‧‧剝離的起頭部[0040] 2‧‧‧Single crystal SiC ingot with the same vertical line and c-axis of the end surface 4‧‧‧First surface (end surface) 6‧‧‧Second surface 8‧‧‧Circumferential surface 10‧‧‧Perpendicular line 12‧ ‧‧Laser processing device 14‧‧‧Clamping table 16‧‧‧Light collector 18‧‧‧Reformed part 20‧‧‧Crack 22‧‧‧Peeling layer 23‧‧‧Peeling starter part 24 ‧‧‧Peeling device 26‧‧‧Liquid 28‧‧‧Vat 30‧‧‧Ultrasonic vibration plate 32‧‧‧Ultrasonic vibration imparting means 34‧‧‧Wafer 40‧‧‧c-axis inclined with respect to the vertical line of the end face The single crystal SiC ingot 42‧‧‧First side (end surface) 44‧‧‧Second side 46‧‧‧Circumferential surface 48‧‧‧Perpendicular line 50‧‧‧Orientation plane 52‧‧‧Orientation plane 54‧‧‧Change Quality part 56‧‧‧Crack 58‧‧‧Peeling layer 59‧‧‧Starting part of peeling off

[0010] 　　[第1圖]端面的垂線及c軸是一致的單結晶SiC錠的立體圖。 　　[第2圖]顯示實施剝離層形成過程的狀態的立體圖(a)及前視圖(b)。 　　[第3圖]顯示從上方所見的改質部及龜裂的示意圖。 　　[第4圖]顯示從上方所見的改質部的示意圖。 　　[第5圖]顯示在剝離層形成過程中，改質部是在圓周方向連續地形成的狀態的立體圖。 　　[第6圖]在形成有剝離層的外周領域的一部分形成有剝離的起頭部的單結晶SiC錠的立體圖。 　　[第7圖]在形成有剝離層的外周領域的全部形成有剝離的起頭部的單結晶SiC錠的立體圖。 　　[第8圖]顯示晶圓生成過程的實施的狀態的前視圖(a)及被生成的晶圓的立體圖(b)。 　　[第9圖]c軸是對於端面的垂線傾斜的單結晶SiC錠的前視圖(a)、俯視圖(b)及立體圖(c)。 　　[第10圖]顯示剝離層形成過程的實施的狀態的立體圖(a)及前視圖(b)。 　　[第11圖]形成有剝離層的單結晶SiC錠的俯視圖(a)，B-B線剖面圖。 　　[第12圖]在形成有剝離層的外周領域的一部分形成有剝離的起頭部的單結晶SiC錠的立體圖。[0010] [FIG. 1] A perspective view of a single crystal SiC ingot in which the vertical line and the c-axis of the end face are aligned. [Fig. 2] A perspective view (a) and a front view (b) showing a state in which the peeling layer is formed. [Fig. 3] A schematic diagram showing the modified portion and cracks seen from above. [Fig. 4] A schematic diagram showing the reforming part seen from above. [Fig. 5] A perspective view showing a state in which the modified portion is continuously formed in the circumferential direction during the formation of the peeling layer. [Fig. 6] A perspective view of a single-crystal SiC ingot in which a peeling initiation portion is formed in a part of the outer peripheral region where the peeling layer is formed. [Fig. 7] A perspective view of a single-crystal SiC ingot with a peeling start portion formed in the entire outer peripheral region where the peeling layer is formed. [Fig. 8] A front view (a) and a perspective view (b) of the produced wafer showing the state of the wafer production process. [Fig. 9] The c-axis is a front view (a), a top view (b), and a perspective view (c) of a single crystal SiC ingot inclined with respect to the vertical line of the end face. [Fig. 10] A perspective view (a) and a front view (b) showing the state of the peeling layer formation process. [Fig. 11] A top view (a) of a single crystal SiC ingot with a peeling layer formed, and a cross-sectional view taken along line B-B. [Fig. 12] A perspective view of a single-crystal SiC ingot with a peeling start portion formed in a part of the outer peripheral region where the peeling layer is formed.

2‧‧‧端面的垂線及c軸是一致的單結晶SiC錠 2‧‧‧Single crystal SiC ingot with the same vertical line and c-axis of the end face

4‧‧‧第一面(端面) 4‧‧‧First side (end)

6‧‧‧第二面 6‧‧‧Second side

8‧‧‧周面 8‧‧‧Surrounding

18‧‧‧改質部 18‧‧‧Renovation Department

22‧‧‧剝離層 22‧‧‧Peeling layer

23‧‧‧剝離的起頭部 23‧‧‧Peeling starter

Ls‧‧‧寬度 Ls‧‧‧Width

Claims (4)

一種晶圓生成方法，是從具有c軸及與c軸垂直交叉的c面的單結晶SiC錠生成晶圓的晶圓生成方法，至少由：將對於單結晶SiC具有透過性的波長的雷射光線的集光點定位在從單結晶SiC錠的端面的相當於欲生成的晶圓厚度的深度，將雷射光線照射在單結晶SiC錠，而形成由使SiC分離成Si及C的改質部及從改質部朝c面同向地形成的龜裂所構成的剝離層的剝離層形成過程；及在形成有剝離層的外周領域的全部或是一部分進一步將雷射光線照射使龜裂成長而形成剝離的起頭部的剝離起頭部形成過程；及藉由將單結晶SiC錠浸漬在溫度被設定成可抑制氣泡發生的0~25℃的水中，將具有與單結晶SiC錠的特有振動數近似的頻率以上的頻率的超音波透過水朝單結晶SiC錠賦予，而以剝離層作為界面將單結晶SiC錠的一部分剝離並生成晶圓的晶圓生成過程所構成。 A wafer generation method for generating a wafer from a single-crystal SiC ingot having a c-axis and a c-plane perpendicularly intersecting the c-axis, comprising at least: converting a laser of a wavelength that is transparent to single-crystal SiC The light collection point is positioned at a depth corresponding to the thickness of the wafer to be produced from the end face of the single crystal SiC ingot, and the single crystal SiC ingot is irradiated with laser light to form a modification by separating SiC into Si and C. The peeling layer forming process of the peeling layer composed of the cracks formed in the same direction from the modified part toward the c-plane; and further irradiating the whole or part of the outer peripheral area where the peeling layer is formed to cause the cracking The process of forming the exfoliated head by growing to form the exfoliated head; and by immersing the single crystal SiC ingot in water at a temperature of 0 to 25° C. whose temperature is set to suppress the generation of air bubbles, the single crystal SiC ingot is immersed. It consists of a wafer formation process in which ultrasonic waves having a frequency equal to or higher than the frequency of the unique vibration number are imparted to a single crystal SiC ingot through water, and a part of the single crystal SiC ingot is exfoliated with a peeling layer as an interface to generate a wafer. 如申請專利範圍第1項的晶圓生成方法，其中，與單結晶SiC錠的特有振動數近似的頻率是單結晶SiC錠的特有振動數的0.8倍。 The wafer production method according to claim 1, wherein the frequency close to the unique vibration number of the single crystal SiC ingot is 0.8 times the unique vibration number of the single crystal SiC ingot. 如申請專利範圍第1項的晶圓生成方法，其中， 在該剝離層形成過程中，單結晶SiC錠的端面的垂線及c軸是一致的情況，在不超過從連續地形成的改質部朝c面同向地形成的龜裂的寬度範圍，將單結晶SiC錠及集光點相對地分度給進而將改質部連續地形成使龜裂及龜裂連結而形成剝離層。 The wafer generation method according to item 1 of the scope of the application, wherein, In the process of forming the peeling layer, when the vertical line and the c-axis of the end face of the single crystal SiC ingot are the same, the width of the crack formed in the same direction from the continuously formed modified portion to the c-plane is not exceeded. The single crystal SiC ingot and the light collecting point are relatively indexed to form the modified portion continuously, and the cracks and the cracks are connected to form a peeling layer. 如申請專利範圍第1項的晶圓生成方法，其中，在該剝離層形成過程中，c軸是對於單結晶SiC錠的端面的垂線傾斜的情況，朝與由c面及端面形成偏角的方向垂直交叉的方向將改質部連續地形成且從改質部朝c面同向地形成龜裂，朝形成該偏角的方向在不超過龜裂的寬度範圍將單結晶SiC錠及集光點相對地分度(index)給進，朝與形成該偏角的方向垂直交叉的方向將改質部連續地形成且從改質部朝c面同向地將龜裂依序形成而形成剝離層。 The wafer production method according to claim 1, wherein, in the peeling layer formation process, the c-axis is inclined with respect to the vertical line of the end face of the single crystal SiC ingot, and the c-axis is inclined to the c-plane and the end face which forms an off-angle. The modified part is continuously formed in the direction perpendicular to the cross, and the cracks are formed in the same direction from the modified part to the c-plane, and the single crystal SiC ingot and light are collected in the direction of forming the off-angle not exceeding the width of the cracks. The points are relatively indexed, and the modified portion is continuously formed in the direction perpendicular to the direction in which the off-angle is formed, and the cracks are sequentially formed from the modified portion toward the c-plane in the same direction to form peeling. Floor.
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