TWI776951B - 電阻式記憶體裝置 - Google Patents

電阻式記憶體裝置 Download PDF

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Publication number
TWI776951B
TWI776951B TW107131958A TW107131958A TWI776951B TW I776951 B TWI776951 B TW I776951B TW 107131958 A TW107131958 A TW 107131958A TW 107131958 A TW107131958 A TW 107131958A TW I776951 B TWI776951 B TW I776951B
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TW
Taiwan
Prior art keywords
current
memory device
circuit
read
cell
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Application number
TW107131958A
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English (en)
Chinese (zh)
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TW201916040A (zh
Inventor
阿圖爾 安東尼楊
表錫洙
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南韓商三星電子股份有限公司
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Application filed by 南韓商三星電子股份有限公司 filed Critical 南韓商三星電子股份有限公司
Publication of TW201916040A publication Critical patent/TW201916040A/zh
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Publication of TWI776951B publication Critical patent/TWI776951B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer

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  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Memories (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Static Random-Access Memory (AREA)
  • Debugging And Monitoring (AREA)
TW107131958A 2017-09-15 2018-09-12 電阻式記憶體裝置 TWI776951B (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
KR20170118844 2017-09-15
??10-2017-0118844 2017-09-15
KR10-2017-0118844 2017-09-15
??10-2018-0020007 2018-02-20
KR1020180020007A KR102532204B1 (ko) 2017-09-15 2018-02-20 레퍼런스 셀을 포함하는 저항성 메모리 장치 및 그것의 동작 방법
KR10-2018-0020007 2018-02-20

Publications (2)

Publication Number Publication Date
TW201916040A TW201916040A (zh) 2019-04-16
TWI776951B true TWI776951B (zh) 2022-09-11

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW107131958A TWI776951B (zh) 2017-09-15 2018-09-12 電阻式記憶體裝置

Country Status (3)

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JP (1) JP7190844B2 (ko)
KR (1) KR102532204B1 (ko)
TW (1) TWI776951B (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10832783B1 (en) * 2019-09-24 2020-11-10 Macronix International Co., Ltd. Data sensing device and data sensing method thereof
US11636322B2 (en) 2020-01-03 2023-04-25 Silicon Storage Technology, Inc. Precise data tuning method and apparatus for analog neural memory in an artificial neural network
US11574678B2 (en) * 2020-09-17 2023-02-07 Fujitsu Semiconductor Memory Solution Limited Resistive random access memory, and method for manufacturing resistive random access memory

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060227598A1 (en) * 2003-04-21 2006-10-12 Nec Corporation Magnetic random access memory using improved data read out method
US8559243B2 (en) * 2010-11-22 2013-10-15 Infineon Technologies Ag Self timed current integrating scheme employing level and slope detection
US9442838B2 (en) * 2012-10-22 2016-09-13 Rambus Inc. Remapping memory cells based on future endurance measurements
EP2577665B1 (en) * 2010-06-01 2017-05-10 1/6 Qualcomm Incorporated High-speed sensing for resistive memories
US20170169870A1 (en) * 2015-09-24 2017-06-15 Intel IP Corporation Sense amplifier

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100735677B1 (ko) * 2005-12-28 2007-07-04 삼성전자주식회사 스탠바이 전류 저감 회로 및 이를 구비한 반도체 메모리장치
US7471582B2 (en) * 2006-07-28 2008-12-30 Freescale Semiconductor, Inc. Memory circuit using a reference for sensing
KR101083302B1 (ko) * 2009-05-13 2011-11-15 주식회사 하이닉스반도체 반도체 메모리 장치
US8274819B2 (en) * 2010-02-04 2012-09-25 Magic Technologies Read disturb free SMT MRAM reference cell circuit
US8902641B2 (en) 2012-04-10 2014-12-02 Taiwan Semiconductor Manufacturing Co., Ltd. Adjusting reference resistances in determining MRAM resistance states
CN106233392B (zh) * 2014-03-07 2019-03-29 东芝存储器株式会社 存储器设备
KR102354350B1 (ko) 2015-05-18 2022-01-21 삼성전자주식회사 메모리 장치 및 이를 포함하는 메모리 시스템
KR102358564B1 (ko) 2015-09-02 2022-02-04 삼성전자주식회사 단락된 메모리 셀의 가변 저항 소자를 갖는 반도체 메모리 장치
JP6660745B2 (ja) 2016-01-28 2020-03-11 ラピスセミコンダクタ株式会社 基準電流生成回路及びメモリ装置
US9679643B1 (en) * 2016-03-09 2017-06-13 Taiwan Semiconductor Manufacturing Co., Ltd. Resistive memory device having a trimmable resistance of at least on of a driver and a sinker is trimmed based on a row location

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060227598A1 (en) * 2003-04-21 2006-10-12 Nec Corporation Magnetic random access memory using improved data read out method
EP2577665B1 (en) * 2010-06-01 2017-05-10 1/6 Qualcomm Incorporated High-speed sensing for resistive memories
US8559243B2 (en) * 2010-11-22 2013-10-15 Infineon Technologies Ag Self timed current integrating scheme employing level and slope detection
US9442838B2 (en) * 2012-10-22 2016-09-13 Rambus Inc. Remapping memory cells based on future endurance measurements
US20170169870A1 (en) * 2015-09-24 2017-06-15 Intel IP Corporation Sense amplifier

Also Published As

Publication number Publication date
JP7190844B2 (ja) 2022-12-16
KR20190031108A (ko) 2019-03-25
TW201916040A (zh) 2019-04-16
JP2019053812A (ja) 2019-04-04
KR102532204B1 (ko) 2023-05-16

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