TWI771976B - Template for supporting mask and producing method thereof and producing method of mask and producing method of mask integrated frame - Google Patents

Abstract

The present invention relates to a mask support template, a method for manufacturing the same, a method for manufacturing a mask, and a method for manufacturing a frame-integrated mask. The method for manufacturing a mask support template according to the present invention includes the following steps: (a) preparing a mask metal film with a first insulating portion formed on one side; (b) making the mask metal film sandwich the first insulating portion on the template The film is adhered to the upper face of the template; (c) the mask is fabricated by forming a mask pattern on the mask metal film.

Description

Mask support template and method for manufacturing the same, method for manufacturing a mask, and method for manufacturing a frame-integrated mask

Field of Invention

The present invention relates to a mask support template, a method for manufacturing the same, a method for manufacturing a mask, and a method for manufacturing a frame-integrated mask. More specifically, it relates to a mask support template capable of accurately controlling the size and position of a mask pattern, a method for manufacturing the same, a method for manufacturing a mask, and a method for manufacturing a frame-integrated mask.

Background of the Invention

As a technology for forming a pixel in an OLED (Organic Light Emitting Diode) manufacturing process, an FMM (Fine Metal Mask) method is mainly used, which tightens a metal mask (Shadow Mask) in the form of a thin film. Attach to the substrate and deposit organics on the desired locations.

A conventional mask manufacturing method prepares a metal sheet used as a mask, performs PR coating on the metal sheet, and then performs patterning, or performs PR coating to have a pattern, and then manufactures a patterned mask by etching. However, in order to prevent a shadow effect, it is difficult to form a tapered mask pattern obliquely, and an additional process needs to be performed, which leads to an increase in process time and cost, and a decrease in productivity.

In the ultra-high-quality OLED, the existing QHD picture quality is 500-600PPI (pixel per inch, pixels per inch), and the pixel size reaches about 30-50μm, while the 4KUHD and 8KUHD picture quality have higher- Resolutions of 860PPI, -1600PPI, etc. Therefore, there is an urgent need to develop a technology capable of precisely adjusting the size of the mask pattern.

In addition, in the existing OLED manufacturing process, after the mask is manufactured into a strip shape, a plate shape, etc., the mask is welded and fixed to the OLED pixel deposition frame and used. One mask may have a plurality of cells corresponding to one display. In addition, in order to fabricate large area OLEDs, a plurality of masks can be fixed to the OLED pixel deposition frame, and during the process of fixing to the frame, each mask is stretched to make it flat. Adjusting the stretching force to flatten the entire portion of the mask is a very difficult task. In particular, in order to align a mask pattern with a size of several to several tens of μm while flattening each cell, it is necessary to perform a difficult operation of finely adjusting the tensile force applied to each side of the mask, and simultaneously to confirm the alignment status.

However, in the process of fixing a plurality of masks on a frame, there is still a problem of poor alignment between masks and between mask units. In addition, in the process of welding and fixing the mask to the frame, the thickness of the mask film is too thin and the area is large, so there is a problem that the mask sags or twists due to the load; (burr), etc., leading to a problem of inaccurate alignment of the mask unit, and the like.

In this way, considering the pixel size of ultra-high-quality OLEDs, it is necessary to reduce the alignment error between each unit to about a few μm. Exceeding this error will lead to defective products, so the yield may be extremely low. Therefore, it is necessary to develop a technique for preventing deformation such as sagging or twisting of the mask and for accurate alignment, a technique for fixing the mask to the frame, and the like.

Summary of Invention [technical problem]

Therefore, the present invention has been made in order to solve the various problems of the prior art as described above, and an object thereof is to provide a mask support template capable of accurately controlling the size of a mask pattern, a method for manufacturing the same, a method for manufacturing a mask, and a frame-integrated type Method of manufacturing a mask.

Moreover, the objective of this invention is to provide the manufacturing method of the frame-integrated mask which can prevent deformation|transformation, such as a wrinkle and a twist of a mask. [Technical solutions]

The above objects of the present invention are achieved by a method for manufacturing a mask support template, the method comprising the steps of: (a) preparing a mask metal film having a first insulating portion formed on one side; The insulating portion adheres the mask metal film to the upper surface of the template; (c) the mask is manufactured by forming a mask pattern on the mask metal film.

The temporary bonding portion is formed on the upper surface of the template, and the mask metal film can be bonded to the upper surface of the template by sandwiching the temporary bonding portion and the first insulating portion.

The first insulating portion may include at least any one of cured negative photoresist and epoxy resin-containing negative photoresist.

The temporary adhesive part may be a heat-based releasable adhesive or adhesive sheet and a UV-irradiated-based releasable adhesive or adhesive sheet.

The step (c) may include the following steps: (c1) forming a patterned second insulating portion on the mask metal film; (c2) etching a portion of the mask metal film exposed between the second insulating portions and forming a mask pattern; and (c3) removing the second insulating portion.

Step (c) may include the following steps: (c1) forming a patterned 2-1 insulating portion on the mask metal film; (c2) forming a first mask with a predetermined depth on one side of the mask metal film by wet etching pattern; (c3) filling at least the 2-2 insulating part in the first mask pattern; (c4) volatilizing at least a part of the 2-2 insulating part by baking; (c5) on the upper part of the 2-1 insulating part performing exposure, and leaving only the 2-2 insulating portion located at the vertical lower portion of the 2-1 insulating portion; and (c6) performing wet etching on one side of the mask metal film to form a through-mask from the first mask pattern; A second mask pattern on the other side of the mold metal film.

The thickness of the first mask pattern may be greater than that of the second mask pattern, and the width of the first mask pattern may be greater than that of the second mask pattern.

The sum of the shapes of the first mask pattern and the second mask pattern may have a tapered shape or an inverted tapered shape as a whole.

The steps (c2) and (c3) may further include the following steps: (1) forming a 2-3 insulating portion on at least a portion of the first mask pattern exposed between the 2-1 insulating portions; (2) ) By further wet etching the first mask pattern, the angle formed by the side surface of the first mask pattern and the horizontal plane is reduced; (3) The 2-3 insulating portion is removed.

In step (2), the angle formed by the side surface of the first mask pattern and the horizontal plane may be 30° to 70°.

In addition, the above object of the present invention can be achieved by a mask supporting template, which is used for supporting a mask for OLED pixel formation and corresponding to the frame, the mask supporting template comprising: a template, the upper surface of which is formed with a temporary bonding portion; and a mask, on which a mask pattern is formed and a first insulating portion is formed on one side, and the template and the mask are bonded by sandwiching the temporary bonding portion and the first insulating portion.

The mask may be adhered to the template in a state where a tensile force in the lateral direction is applied.

The above object of the present invention is achieved by a mask manufacturing method, the method comprising the steps of: (a) preparing a mask metal film having a first insulating portion formed on one side; (b) making a mask by sandwiching the first insulating portion on the template The mask metal film is adhered to the upper surface of the template; (c) a mask is fabricated by forming a mask pattern on the mask metal film; (d) the template and the mask are separated.

In addition, the above object of the present invention is achieved by a method for manufacturing a frame-integrated mask, the frame-integrated mask is integrally formed by at least one mask and a frame for supporting the mask, wherein the method comprises the following steps: (a ) preparing a mask metal film with a first insulating portion formed on one side; (b) adhering the mask metal film to the upper surface of the template by sandwiching the first insulating portion on the template; (c) passing the mask metal film on the template forming a mask pattern to manufacture a mask; (d) loading a template onto a frame having at least one mask cell region such that the mask corresponds to a mask cell region of the frame; and (e) attaching the mask to the frame superior.

A step of removing the first insulating portion on the mask may be further included after the step (e).

The first insulating portion may be removed by applying at least one of plasma, UV.

In step (e), the mask can be attached to the frame by irradiating a laser to the first welding portions arranged on the four sides of the mask.

Second welding portions may be further arranged on the apexes of the four sides of the dummy region of the mask, and the arrangement interval of the second welding portions is smaller than the arrangement interval of the first welding portions. The mask is attached to the frame by irradiating the laser at the second welding portion.

Second welding parts may be further arranged on the vertex parts of the four sides of the dummy area of the mask, and the number of the second welding parts arranged in the unit area is larger than the number of the first welding parts. In step (b) , the mask can be attached to the frame by irradiating a laser to the first welding part and the second welding part.

The mask may be adhered to the template in a state in which a tensile force in the lateral direction is applied.

After step (b), any method of heating, chemical treatment, applying ultrasonic waves, applying UV to the temporary adhesive part is performed to separate the mask from the template, and if the template is separated from the mask, the applied on the mask is A tensile force is applied to the frame.

In addition, the above objects of the present invention are achieved by a method for manufacturing a frame-integrated mask, the frame-integrated mask being integrally formed by at least one mask and a frame for supporting the mask, the method comprising the steps of: (a) applying The stencil is loaded onto a frame having at least one mask unit area such that the mask corresponds to the mask unit area of the frame; and (b) attaching the mask to the frame. [Beneficial effect]

According to the present invention as described above, there is an effect that the size and position of the mask pattern can be precisely controlled.

In addition, according to the present invention, there is an effect that deformation such as wrinkles and twists of the mask can be prevented.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT

For the following detailed description of the present invention, reference may be made to the accompanying drawings which illustrate specific embodiments in which the present invention may be practiced. In order to enable those skilled in the art to implement the present invention, the embodiments are specifically described below. These embodiments are described in sufficient detail to enable those of ordinary skill in the art to practice the invention. The various embodiments of the present invention should be understood to be mutually different but not mutually exclusive. For example, the specific shapes, structures, and characteristics described herein may enable one embodiment to be implemented into other embodiments without departing from the spirit and scope of the present invention. In addition, it should be understood that the position or arrangement of the individual constituent elements in each disclosed embodiment may be changed without departing from the spirit and scope of the present invention. Therefore, the following detailed description is not intended to limit the present invention, and the scope of the present invention is limited only by the scope of the appended claims and all equivalents thereof as long as it is properly described. Similar reference numerals in the drawings refer to the same or similar functions in various aspects, and for the sake of convenience, the length, area, thickness, etc. and their forms may also be exaggerated.

Hereinafter, in order to enable those skilled in the art to easily implement the present invention, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

FIG. 1 is a schematic diagram of a conventional process of attaching a mask 10 to a frame 20 .

The existing mask 10 is a stick-type or a plate-type. The strip mask 10 in FIG. 1 can be used by welding and fixing both sides of the strip to the OLED pixel deposition frame. A body (Body, or mask film 11 ) of the mask 10 has a plurality of display cells C in it. One unit C corresponds to one display of a smartphone or the like. A pixel pattern P is formed in the cell C so as to correspond to each pixel of the display.

Referring to FIG. 1( a ), tensile forces F1 - F2 are applied along the long axis direction of the strip mask 10 , and the strip mask 10 is loaded on the frame-shaped frame 20 in the unfolded state. The cells C1 - C6 of the strip mask 10 are located in the blank area inside the frame of the frame 20 .

Referring to (b) of FIG. 1 , alignment is performed while finely adjusting the tensile forces F1 - F2 applied to each side of the bar mask 10 , and then the bar mask 10 is made by soldering a part of the side surface of the bar mask 10 . and the frame 20 are connected to each other. (c) of FIG. 1 shows a side section of the strip mask 10 and the frame connected to each other.

Despite fine-tuning the tensile forces F1-F2 applied to each side of the strip mask 10, the problem of poor alignment of the mask elements C1-C3 with each other still occurs. For example, the distances between the patterns P of the cells C1-C6 are different from each other or the patterns P are skewed. Since the stripe mask 10 has a large area including a plurality of cells C1 to C6 and has a very thin thickness of several tens of μm, it is easy to sag or twist due to a load. In addition, it is a very difficult operation to instantly confirm the alignment state of each of the cells C1-C6 through a microscope while adjusting the tensile force F1-F2 to make all the cells C1-C6 flat. However, in order to prevent the mask pattern P with a size of several μm to several tens of μm from adversely affecting the pixel process of the ultra-high-quality OLED, the alignment error is preferably not greater than 3 μm. The alignment error between such adjacent cells is referred to as pixel position accuracy (PPA).

Further, the strip masks 10 are respectively connected to a frame 20, and the alignment state between the strip masks 10 and between the cells C-C6 of the strip masks 10 is precisely Very difficult job, and only increases the alignment-based process time, which is a significant cause of reduced productivity.

In addition, after the strip mask 10 is connected and fixed to the frame 20 , the tensile forces F1 - F2 applied to the strip mask 10 will act on the frame 20 in opposite directions. This tension causes a slight deformation of the frame 20, and a problem in that the alignment state among the plurality of cells C-C6 is distorted occurs.

In view of this, the present invention proposes a frame 200 and a frame-integrated mask capable of forming an integrated structure of the mask 100 and the frame 200 . The mask 100 integrated with the frame 200 can not only prevent deformation such as sagging or twisting, but also can be accurately aligned with the frame 200 .

2 is a front view [ FIG. 2( a )] and a side sectional view [ FIG. 2( b )] of a frame-integrated mask according to an embodiment of the present invention.

Hereinafter, although this specification describes the arrangement of the frame-integrated mask, the structure and manufacturing process of the frame-integrated mask can be understood to include the entire contents of Korean Patent Application No. 2018-0016186.

Referring to FIG. 2 , the frame-integrated mask may include a plurality of masks 100 and a frame 200 . In other words, it is a form in which the plurality of masks 100 are attached to the frame 200, respectively. In the following, for convenience of explanation, the square-shaped mask 100 is used as an example for description, but before the mask 100 is attached to the frame 200, it may be a strip-shaped mask with protrusions for clamping on both sides and attached to the frame. The protrusions can be removed after 200 on.

A plurality of mask patterns P are formed on each mask 100 , and one cell C may be formed on one mask 100 . One mask unit C can correspond to one display of a smartphone or the like.

The mask 100 may also be made of materials such as invar, super invar, nickel (Ni), and nickel-cobalt (Ni-Co). The mask 100 may use a metal sheet produced by a rolling process or electroforming.

The frame 200 may be formed in the form of attaching a plurality of masks 100 . In consideration of thermal deformation, the frame 200 is preferably formed of Invar, super Invar, nickel, nickel-cobalt, etc., which have the same thermal expansion coefficient as the mask. The frame 200 may include an edge frame portion 210 having a generally quadrangular, box-shaped shape. The inside of the edge frame part 210 may have a hollow shape.

In addition, the frame 200 has a plurality of mask unit regions CR, and may include a mask unit sheet portion 220 connected to the edge frame portion 210 . The mask unit sheet portion 220 may be composed of an edge sheet portion 221 and a first grid sheet portion 223 and a second grid sheet portion 225 . The edge sheet portion 221 , the first grid sheet portion 223 , and the second grid sheet portion 225 refer to respective portions divided on the same sheet, and these are integrally formed with each other.

The thickness of the edge frame portion 210 may be greater than that of the mask unit sheet portion 220, and may be formed with a thickness of several mm to several cm. Although the thickness of the mask unit sheet portion 220 is thinner than that of the edge frame portion 210, it is thicker than the mask 100, and the thickness may be about 0.1 mm to 1 mm. The width of the first grid sheet portion 223 and the second grid sheet portion 225 may be about 1-5 mm.

In the planar sheet, a plurality of mask unit regions CR (CR11 to CR56) may be provided in addition to the regions occupied by the edge sheet portion 221, the first grid sheet portion 223, and the second grid sheet portion 225. .

The mask 200 has a plurality of mask cell regions CR, and each mask 100 may be attached so that each mask cell C corresponds to each mask cell region CR, respectively. The mask unit C corresponds to the mask unit region CR of the frame 200, and part or all of the dummy portion may be attached to the frame 200 (mask unit sheet portion 220). Thus, the mask 100 and the frame 200 may form an integrated structure.

FIG. 3 is a schematic diagram of a mask 100 according to an embodiment of the present invention.

The mask 100 may include a mask cell C on which a plurality of mask patterns P are formed, and a dummy portion DM around the mask cell C. The mask 100 may be manufactured using a metal sheet produced by a rolling process, electroforming, or the like, and one cell C may be formed in the mask 100 . The dummy portion DM corresponds to the part of the mask film 110 [mask metal film 110 ] other than the cell C, and may include only the mask film 110 or may include a mask formed with a predetermined dummy portion pattern similar in shape to the mask pattern P. Molding film 110 . The dummy part DM corresponds to the edge of the mask 100 and part or all of the dummy part DM may be attached to the frame 200 (mask unit sheet part 220 ).

The width of the mask pattern P may be less than 40 μm, and the thickness of the mask 100 may be about 5-20 μm. Since the frame 200 has a plurality of mask cell regions CR ( CR11 to CR56 ), it may also have a plurality of masks including mask cells C ( C11 to 56 ) corresponding to the respective mask cell regions CR ( CR11 to CR56 ), respectively. Modulo 100. In addition, there may be a plurality of templates 50 for supporting a plurality of masks 100 described later, respectively.

The mask 100 includes welding portions WP corresponding to regions where welding is performed. A plurality of welding portions WP are arranged at predetermined intervals on the edge of the mask 100 or the portion of the dummy portion DM.

4 to 5 are schematic diagrams of a process of forming a mask by adhering a mask metal film on a template to fabricate a mask support template according to an embodiment of the present invention. 4 and 5 illustrate the process of forming the mask pattern P after adhering the mask metal film 110 to the template 50, the mask 100 (refer to FIG. 3 ) may be formed with the mask pattern P in advance. ] is bonded to the template 50, thereby ending the manufacture of the template 50 for supporting the mask 100. For the case of directly bonding the mask 100 to the template 50, FIGS. 4(b) to 5(d) may be omitted process.

Referring to (a) of FIG. 4 , a template 50 (template) may be provided. The template 50 is a medium to which the mask 100 is attached and moves the mask 100 in a state of supporting the mask 100 . One side of the template 50 is preferably a flat surface to support and move the flat mask 100 . The center portion 50 a may correspond to the mask unit C of the mask metal film 110 , and the edge portion 50 b may correspond to the dummy portion DM of the mask metal film 110 . In order to be able to support the mask metal film 110 as a whole, the template 50 has a flat plate shape with an area larger than that of the mask metal film 110 .

In order to allow the laser beam L irradiated from the upper portion of the template 50 to reach the welding portion WP (area where welding is performed) of the mask 100 , the template 50 may be formed with a laser passing hole 51 . The laser passing holes 51 can be formed on the template 50 in a manner corresponding to the position and number of the welding portions WP. Since a plurality of welding portions WP are arranged at predetermined intervals on the edge of the mask 100 or on the dummy portion DM portion, a plurality of laser passing holes 51 may be formed at predetermined intervals accordingly. As an example, since a plurality of welding portions WP are arranged at predetermined intervals on the dummy portion DM portions on both sides (left/right) of the mask 100 , the laser passing holes 51 may also be located on both sides (left/right) of the template 50 . ) are formed in plural at predetermined intervals.

The positions and the number of the laser passing holes 51 do not necessarily correspond to the positions and the number of the welding portions WP. For example, only part of the laser passing holes 51 may be irradiated with the laser beam L to perform welding. In addition, the part of the laser passing hole 51 that does not correspond to the welding part WP can also be used as an alignment mark when aligning the mask 100 and the template 50 . If the material of the template 50 is transparent to the laser light L, the laser passing hole 51 may not be formed.

One side of the template 50 may form a temporary bonding portion 55 . Before the mask 100 is attached to the frame 200 , the temporary adhesive portion 55 may temporarily attach the mask 100 [or the mask metal film 110 ] to one side of the template 50 and support it on the template 50 .

The temporary adhesive part 55 may use a heat-releasable adhesive or a UV-irradiated-releasable adhesive.

As an example, liquid wax may be used for the temporary adhesive portion 55 . As the liquid wax, the same wax used in the polishing step of the semiconductor wafer and the like can be used, and the type thereof is not particularly limited. As a resin component mainly used for controlling adhesion, impact resistance, etc. related to holding force, the liquid wax may include substances and solvents such as acrylic acid, vinyl acetate, nylon, and various polymers. As an example, acrylonitrile butadiene rubber (ABR) may be used as the resin component for the temporary adhesive portion 55 and SKYLIQUIDABR-4016 containing n-propanol may be used as the solvent component. The liquid wax may be formed on the temporary adhesive portion 55 using a spin coating method.

The temporary adhesive portion 55 serving as liquid wax decreases in viscosity at a temperature higher than 85° C. to 100° C., and increases in viscosity at a temperature lower than 85° C., and a part is cured into a solid, so that the mask metal film 110 can be solidified. 'Fixed with template 50.

Then, referring to (b) of FIG. 4 , the mask metal film 110 ′ (or the mask 100 on which the mask pattern P is formed) may be bonded on the template 50 . The liquid wax is heated above 85° C. and the mask metal film 110 ′ is brought into contact with the template 50 , and then the mask metal film 110 ′ and the template 50 may be passed between rollers for bonding.

According to one embodiment, the template 50 is baked at about 120° C. for 60 seconds to vaporize the solvent of the temporary bonding portion 55 , and then the mask metal film lamination process can be performed immediately. Lamination is performed by loading the mask metal film 110' on the template 50 with the temporary adhesive portion 55 formed on one side and passing it between an upper roll at about 100°C and a lower roll at about 0°C. As a result, the mask metal film 110 ′ can be brought into contact with the template 50 by interposing the temporary adhesive portion 55 .

In addition, when the mask metal film 110 or the mask 100 having the mask pattern P formed thereon is adhered to the template 50, the mask metal film 110 or the mask 100 may be adhered in a state where tensile force is applied to at least two side surfaces of the mask 100. Template 50. Then, for the mask metal film 110, a process of adhering to the template 50 in a state of applying a tensile force and forming a mask pattern may be further performed. Thus, the mask metal film 110 or the mask 100 can be adhered and fixed on the template 50 in a state in which the mask metal film 110 has a tensile force. The remaining tensile force is maintained until the mask metal film 110 or the mask is separated from the template 50 .

Next, referring further to FIG. 4( b ), planarization PS may be performed on one surface of the mask metal film 110 ′. The mask metal film 110' manufactured by the rolling process may be reduced in thickness (110' -> 110) by the planarization PS process. In addition, the planarization PS process can also be performed on the mask metal film 110 made by the electroforming process to control its surface characteristics and thickness.

Therefore, as shown in (c) of FIG. 4 , as the thickness of the mask metal film 110 ′ is reduced (110 ′ -> 110 ), the thickness of the mask metal film 110 may be about 5 μm to 20 μm. In addition, FIG. 4( c ) may be omitted and the mask metal film 110 after the patterned PS process has been completed may be used.

Then, referring to (d) of FIG. 5 , the patterned insulating portion 25 may be formed on the mask metal film 110 . The insulating portion 25 may be formed of a photoresist material by a printing method or the like.

Next, etching of the mask metal film 110 may be performed. Methods such as dry etching, wet etching, etc. can be used, and are not particularly limited. As a result of the etching, portions of the mask metal film 110 exposed on the vacancies 26 between the insulating portions 25 are etched. The etched portion of the mask metal film 110 constitutes the mask pattern P, so that the mask 100 in which the plurality of mask patterns P are formed can be manufactured.

Then, referring to (e) of FIG. 5 , the manufacture of the template 50 supporting the mask 100 may be completed by removing the insulating portion 25 .

Next, the process of manufacturing the mask 100 by forming the mask pattern P on the mask metal film 110 will be described.

6 is a schematic diagram of the etching degree (d) of the mask according to the conventional mask manufacturing process [(a) to (c)] and the comparative example.

Referring to FIG. 6 , only wet etching is performed in the manufacturing process of the existing mask.

First, as shown in FIG. 6( a ), a patterned photoresist M may be formed on a planar film 110 ′ (sheet). Then, as in (b) of FIG. 6 , wet etching WE may be performed through spaces between the patterned photoresists M. After the wet etching WE is performed, a part of the space of the film 110' is penetrated, so that the mask pattern P' can be formed. Then, if the photoresist M is cleaned, the film 110 ′ on which the mask pattern P′ is formed, that is, the mask 100 ′ can be produced.

As shown in FIG. 6( c ), the conventional mask 100 ′ has a problem that the size of the mask pattern P′ is not constant. Since the wet etching of WE is performed isotropically, the shape after etching is approximately an arc shape. Moreover, since it is difficult to keep the etching rate of each part consistent during the wet etching of WE, the widths R1 ′, R1 ″ and R1 ″′ of the through pattern after penetrating through the film 110 ′ can only be different from each other. In particular, in a pattern in which undercut UC (undercut) frequently occurs, not only the lower width R1" of the mask pattern P' but also the upper width R2" are formed wider, and the undercut is less likely to occur. In the UC pattern, the lower widths R1', R1"' and the upper widths R2', R2"' are relatively narrow.

As a result, the conventional mask 100' has a problem that the size of each mask pattern P' is not uniform. As far as ultra-high-quality OLEDs are concerned, the current QHD quality is 500-600PPI (pixel per inch), and the pixel size reaches about 30-50μm, while 4KUHD and 8KUHD high-quality have higher -860PPI, - 1600PPI and other resolutions, so slight differences in size may cause product defects.

Referring to FIG. 6( d ), since the wet etching WE is performed isotropically, the form after etching is approximately an arc shape. In addition, in the process of wet etching, the etching speed of each part is difficult to be completely the same. If only one wet etching is performed to penetrate the mask metal film 110 to form a mask pattern, the deviation will be greater. For example, although the wet etching rates of the mask pattern 111 and the mask pattern 112 are different, the difference in the upper width (undercut) is not very large. However, the difference between the lower width PD1 of the mask metal film 110 penetrated by forming the mask pattern 111 and the lower width PD2 of the mask metal film 110 penetrated by forming the mask pattern 112 is much larger than the difference of the upper width. This is a result of the fact that wet etching proceeds isotropically. In other words, the widths that determine the pixel size are the lower widths PD1 and PD2 of the mask patterns 111 and 112, not the upper widths. Therefore, it may be considered to control the lower widths PD1, PD1 and PD2 by using other wet etching methods different from one wet etching. Program for PD2.

Therefore, according to an aspect of the present invention, the precision of the mask pattern in the wet etching process can be improved by multiple wet etchings.

7 to 8 are schematic diagrams of a manufacturing process of a mask according to an embodiment of the present invention.

Referring to (a) of FIG. 7 , first, a mask metal film 110 as a metal sheet may be provided. The mask metal film 110 may be formed by a rolling process, electroforming, etc. The material of the mask metal film 110 may be invar, super invar, nickel (Ni), nickel-cobalt ( Ni-Co) etc.

Then, the patterned 2-1 insulating portion M1 may be formed on one surface (upper surface) of the mask metal film 110 . The 2-1 insulating portion M1 can be formed of a photoresist material by a printing method or the like. The insulating portions M1, M2, and M3 in FIGS. 7 to 8 correspond to the second insulating portion 25 described later in FIG. 10, and are different from the first insulating portion 23. Therefore, it should be noted that the insulating portions M1, M2, and M3 is referred to as a 2-1 insulating portion M1, a 2-2 insulating portion M2, and a 2-3 insulating portion M3.

The 2-1 insulating portion M1 may be a black matrix photoresist or a photoresist material with a metal plating film formed on the upper portion. In addition, the material of the 2-1 insulating portion M1 may be a photoresist material different from that of the 2-2 insulating portion M2 or the 2-3 insulating portion M3 described later, and may preferably be an epoxy-based photoresist material. . The black matrix photoresist may be a material including resin black matrix, which is used to form the black matrix of the display panel. The shading effect of black matrix photoresist will be better than that of general photoresist. In addition, the photoresist with the metal plating film formed on the upper part has a better light-shielding effect of shielding the light irradiated from the upper part by the metal plating film. The 2-1 insulating portion M1 may be a positive type photoresist material.

Then, referring to (b) of FIG. 7 , a first mask pattern P1 ′ of a predetermined depth may be formed on one side (upper surface) of the mask metal film 110 by wet etching WE1 . When wet etching WE1, the mask metal film 110 should not be penetrated. Therefore, the first mask pattern P1' does not penetrate through the mask metal film 110 and may be generally formed in a circular arc shape. That is, the depth value of the first mask pattern P1 ′ may be smaller than the thickness of the mask metal film 110 .

Since the wet etching WE1 has isotropic etching characteristics, the width R2 of the first mask pattern P1 is different from the spacing R3 between the patterns of the 2-1 insulating portion M1, and the width R2 between the patterns of the 2-1 insulating portion M1 can be more wider width of the pitch R3. In other words, since undercuts UC (undercuts) are formed on the lower portions of both sides of the 2-1 insulating portion M1, the width R2 of the first mask pattern P1 is compared with that between the patterns of the 2-1 insulating portion M1. The spacing R3 can be more than the width of the undercut UC.

Then, referring to FIG. 7( c ), the 2-2 insulating portion M2 can be formed on one surface (upper surface) of the mask metal film 110 . The 2-2 insulating portion M2 can be formed of a photoresist material by a printing method or the like. The 2-2 insulating portion M2 is preferably a positive type photoresist material because it needs to remain in the space where the undercut UC is formed, which will be described later.

Since the 2-2 insulating portion M2 is formed on one side (upper surface) of the mask metal film 110, a part is formed on the 2-1 insulating portion M1, and the other portion is filled into the first mask pattern P1.

For the 2-2 insulating portion M2, a photoresist diluted in a solvent can be used. If a high-concentration photoresist solution is formed on the mask metal film 110 and the 2-1 insulating portion M1, the high-concentration photoresist solution reacts with the photoresist of the 2-1 insulating portion M1, thereby There is a possibility that a part of the 2-1 insulating portion M1 may be melted. Therefore, in order not to affect the 2-1 insulating portion M1, the 2-2 insulating portion M2 may use a photoresist whose concentration is reduced by diluting in a solvent.

Then, referring to FIG. 8( d ), a part of the 2-2 insulating portion M2 can be removed. As an example, a part of the second insulating portion M2 may be volatilized and removed by baking. After the solvent of the 2-2 insulating portion M2 is volatilized by the baking process, only the photoresist component remains. Therefore, the exposed portion of the 2-2 insulating portion M2 ′ remains at the exposed portion of the first mask pattern P1 and the surface of the 2-1 insulating portion M1 with a thinner portion, such as a coated film. The thickness of the remaining 2-2 insulating portion M2 ′ is preferably smaller than about several μm so as not to affect the pattern width R3 of the 2-1 insulating portion M1 or the pattern width R2 of the first mask pattern P1 .

Then, referring to (e) of FIG. 8 , exposure L may be performed on one side (upper surface) of the mask metal film 110 . When exposure L is performed on the upper portion of the 2-1 insulating portion M1, the 2-1 insulating portion M1 can function as an exposure mask. Since the 2-1 insulating portion M1 is made of a black matrix photoresist or a photoresist material with a metal plating film formed on the upper portion, the light shielding effect is excellent. Therefore, the 2-2 insulating portion M2 ″ [refer to FIG. 8( f )] located at the vertical lower portion of the 2-1 insulating portion M1 is not exposed to light L, and the other 2-2 insulating portions M2 ′ are exposed to light. Exposure L.

Then, referring to (f) of FIG. 8 , if developing is performed after exposure L, the portion of the 2-2 insulating portion M2 ″ that has not been exposed to the exposure L is left, and the other 2-2 insulating portion M2 ′ is removed. . Since the 2-2 insulating portion M2' is a positive type photoresist, the exposed portion L is removed. The space remaining in the 2-2 insulating portion M2 ″ can correspond to the space where the undercut UC is formed in the lower portions of both sides of the 2-1 insulating portion M1 [see FIG. 7( b ) step].

Then, referring to (g) of FIG. 8 , wet etching WE2 may be performed on the first mask pattern P1 of the mask metal film 110 . The wet etching liquid can penetrate into the space between the patterns of the 2-1 insulating portion M1 and the space of the first mask pattern P1, so that the wet etching WE2 is performed. The second mask pattern P2 may be formed through the mask metal film 110 . That is, it is formed by penetrating the other surface of the mask metal film 110 from the lower end of the first mask pattern P1.

At this time, the 2-2 insulating portion M2 ″ remains on the first mask pattern P1 . The remaining 2-2 insulating portion M2 ″ can function as a mask for wet etching. That is, the 2-2 insulating portion M2 ″ masks the etchant so as to prevent the etchant from being etched toward the side surface of the first mask pattern P1 , and etch toward the lower surface of the first mask pattern P1 .

Since the 2-2 insulating portion M2 ″ is arranged in the undercut UC space in the vertical lower portion of the 2-1 insulating portion M1 , the pattern width of the 2-2 insulating portion M2 ″ is substantially the same as that of the 2-1 insulating portion M1 . The pattern width R3 of M1 corresponds. Thus, the second mask pattern P2 corresponds to wet etching WE2 with respect to the pitch R3 between the patterns of the 2-1 insulating portion M1. Therefore, the width R1 of the second mask pattern P2 may be smaller than the width R2 of the first mask pattern P1.

Since the width of the second mask pattern P2 defines the width of the pixel, the width of the second mask pattern P2 is preferably less than 35 μm. If the thickness of the second mask pattern P2 is too thick, it is difficult to control the width R1 of the second mask pattern P2, and the uniformity of the width R1 decreases, and the overall shape of the mask pattern P may not be tapered/inverted tapered , so the thickness of the second mask pattern P2 is preferably smaller than that of the first mask pattern P1. The thickness of the second mask pattern P2 is preferably close to 0, and when the size of the pixel is considered, for example, the thickness of the second mask pattern P2 is preferably about 0.5 to 3.0 μm, more preferably 0.5 to 2.0 μm.

The sum of the shapes of the connected first mask patterns P1 and the second mask patterns P2 may constitute a mask pattern P. FIG.

Then, referring to (h) of FIG. 8 , by removing the 2-1st insulating portion M and the 2-3rd insulating portion M3 , the manufacture of the mask 100 can be completed. The first mask pattern P1 includes an inclined surface, and the height of the second mask pattern P2 is very low, so if the shapes of the first mask pattern P1 and the second mask pattern P2 are combined, the overall shape is tapered Or inverted cone.

In addition, between steps (b) and (c) of FIG. 7 , steps (b2) and (b3) may be performed.

Referring to (b2) of FIG. 7 , the 2-3 insulating portion M3 can be formed in the first mask pattern P1 ′. The 2-3 insulating portion M3 may be formed on at least a part of the first mask pattern P1 ′ exposed between the 2-1 insulating portions M1 . For example, the 2-3 insulating portion M3 having the width R3 may be formed in the interval between the patterns of the adjacent pair of the 2-1 insulating portion M1, that is, on the first mask pattern P1'.

In order to facilitate exposure, the 2-3 insulating portion M3 preferably uses a negative type photoresist material. When the negative-type photoresist is filled in the first mask pattern P1 ′ and the upper part is exposed to light, the 2-1 insulating portion M1 functions as an exposure mask with respect to the 2-3 insulating portion M3 , so that only the 2-1 insulating portion M1 remains The 2-3 insulating portion M3 exposed between the patterns of the 2-1 insulating portion M1. At this time, as shown in FIG.7(c), the 2-3rd edge part M3 which has the width|variety R3 can be formed in the 1st mask pattern P1'.

Then, referring to (b3) of FIG. 7, the first mask pattern P1' may be further subjected to wet etching WE2. Since the 2-3 insulating portion M3 is partially formed in the first mask pattern P1 ′, the first mask pattern P1 ′ is not etched further downward but is etched in the side surface direction. Therefore, the width of the first mask pattern P1' may be greater than R2 (P1' -> P1).

Specific reasons for performing steps (b2) and (b3) of FIG. 7 are as follows.

If steps (b2) and (b3) of FIG. 7 are omitted and the first mask pattern P1 ′ is formed immediately after the first mask pattern P2 described later in FIG. 8 is formed, it will be difficult to reduce the mask pattern P' (P1 ', P2) taper angle. Based on the characteristics of the isotropic etching process of the first mask pattern P1', it is difficult for the side surface to have a small angle (the angle formed by the horizontal plane and the side surface of the mask pattern), because the angle exceeds 60° or is close to vertical, so even if There are still cases where the angle exceeds 70° after performing two wet etchings. On the whole, the shadow effect can be effectively prevented only when the angle formed between the side surface of the mask pattern P and the horizontal plane is about 30° to 70°. OLED pixels are formed uniformly.

In addition, in order to form the surface of the mask pattern P uniformly without being rough, the wet etching process needs to be performed in a short time. However, if the wet etching process is performed in a short time, it is difficult for the side angle of the first mask pattern P1' to form a small angle. Finally, if the time of the wet etching process is prolonged in order to make the side angle of the first mask pattern P1' form a small angle, the problems of rough surface and uneven shape of the mask pattern will occur.

Therefore, the 2-3 insulating portion M3 is further formed in the first mask pattern P1 ′ to prevent the lower part of the first mask pattern P1 ′ from being etched, and as the wetting progresses further toward the side surface of the first mask pattern P1 ′ Etching WE3 (P1' -> P1) has the effect of reducing the angle (a1 -> a2) formed by the side surface of the first mask pattern P1 and the horizontal plane. Since the first mask pattern P1 is formed by performing the wet etching in two steps, each etching process does not need to last for a long time, so that the surface morphology of the mask pattern P can be uniformly formed.

After further wet etching WE3 to form the first mask pattern P1 where the angle a2 between the side surface and the horizontal plane is reduced, the 2-3 insulating portion M3 can be removed.

FIG. 9 is a schematic diagram of an etching degree of a mask according to an embodiment of the present invention.

The process up to (a) of FIG. 9 is the same as that described in (a) to (b) of FIG. 7 . However, in FIG. 9( a ), the first mask pattern P1 - 1 and the first mask pattern P1 - 2 showing different etching degrees in the wet etching WE1 of the 2-1 insulating portion M1 are compared and explained. .

Referring to (a) of FIG. 9 , even for the same wet etching WE1-1 and WE1-2, different etching processes will occur depending on the etching part, such as the first mask pattern P1-1 and the first mask pattern P1 -2 shown. The pattern width R2-1 of the first mask pattern P1-1 is smaller than the pattern width R2-2 of the first mask pattern P1-2, and the difference between the pattern widths R2-1 and R2-2 will affect the resolution of the pixels. adverse effects.

Then, referring to FIG. 9( b ), it can be confirmed that after performing the processes described in FIG. 7( c ) to FIG. 8( f ), the vertical lower spaces of the 2-1st insulating portion M1 are respectively formed There are 2-2 insulating parts M2''-1 and M2''-2. The formation dimensions of the respective 2-2 insulating portions M2 ″-1 and M2 ″-2 differ from each other depending on the size of the undercut space at the lower portion of the 2-1 insulating portion. Although the size of the 2-2 insulating portion M2"-1 is smaller than the size of the 2-2 insulating portion M2"-2, the pattern width of the 2-2 insulating portions M2"-1 and M2"-2 will be the same. The pattern width R3 of each of the 2-2 insulating portions M2 ″-1 and M2 ″-2 may be the same to correspond to the pattern width R3 of the 2-1 insulating portion M1 .

Then, referring to FIG. 9( c ), wet etching WE2 is performed using the 2-2 insulating portions M2 ″-1 and M2 ″-2 as masks for wet etching, so that the mask metal film 110 can be penetrated. As a result, the deviation of the widths R1-1 and R1-2 of the formed second mask patterns P2-1 and P2-2 is significantly smaller than the widths R2-1 and R1-2 of the first mask patterns P1-1 and P1-2. Deviation of R2-2. This is because the first wet etching is performed on the mask metal film 110 at the depths of the first mask patterns P1-1 and P1-2, and then the second wet etching is performed on the thickness of the remaining mask metal film 110 at the same time. , the pattern widths of the 2-2 insulating portions M2 ″-1 and M2 ″-2 that are subjected to the second wet etching are substantially the same as the pattern widths of the 2-1 insulating portions M1 that are subjected to the first wet etching.

As described above, the mask manufacturing method of the present invention has the effect that the mask pattern P of the desired size can be formed by performing the wet etching a plurality of times. Specifically, with part of the 2-2 insulating portion (M2") remaining, the wet etching WE2 for forming the second mask pattern P2 will be more Since the width R1 of the second mask pattern P2 can be easily controlled, the width R1 of the second mask pattern P2 can be easily controlled. On the other hand, since the inclined surface can be formed by wet etching, a mask that can prevent the shadow effect can be formed. Pattern P.

10 is a schematic diagram of a manufacturing process of a mask support template according to an embodiment of the present invention.

In the present invention, the forming process of the mask pattern P of FIGS. 7 to 8 may be performed after the mask metal film 110 is adhered to the template 50 . The processes of (a), (b), and (c) of FIG. 10 correspond to the processes of (c) of FIG. 4 , and (d) and (e) of FIG. 5 , and thus descriptions of the same parts will be omitted.

Referring to (a) of FIG. 10 , the mask metal film 110 may be bonded to the template by interposing the temporary bonding portion 55 . However, the etching solution should be prevented from entering the interface between the mask metal film 110 and the temporary bonding portion 55 to damage the temporary bonding portion 55/template 50, thereby causing an etching error of the mask pattern P. As a result, the mask metal film 110 can be adhered to the upper surface of the template 50 in a state where the first insulating portion 23 is formed on one surface of the mask metal film 110 . That is, the surface of the mask metal film 110 on which the first insulating portion 23 is formed may face the upper surface of the template 50 . The mask metal film 110 and the template 50 may be bonded to each other by sandwiching the first insulating portion 23 and the temporary bonding portion 55 .

The first insulating portion 23 may be formed on the mask metal film 110 by a printing method or the like from a photoresist material that is not etched by an etching solution. In addition, in order to maintain a circular shape after multiple wet etching processes, the first insulating portion 23 may include at least any one of cured negative photoresist and epoxy resin-containing negative photoresist. As an example, epoxy resin-based SU-8 photoresist and black matrix photoresist are preferably used, so that the temporary adhesive portion 55 is baked and the second insulating portion M2 is baked (refer to (d) in FIG. 8 ) and the like are cured together.

Then, referring to (b) of FIG. 10 , the patterned second insulating portion 25 may be formed on the mask metal film 110 . The second insulating portion 25 corresponds to the insulating portion 25 of FIG. 5( d ), or may correspond to the second insulating portions M1 , M2 and M3 of FIGS. 7 to 8 .

Next, etching of the mask metal film 110 may be performed. The mask pattern P may be formed using the etching method of FIG. 5( d ) or the etching method of FIGS. 7 to 8 .

Then, referring to (c) of FIG. 10 , the manufacture of the template 50 supporting the mask 100 may be completed by removing the second insulating portion 25 . A mask support template including mask 100/first insulating portion 23/temporary adhesive portion 55/template 50 can be fabricated.

Next, the reason for producing the mask support template further including the first insulating portion 23 will be described in more detail.

FIG. 11 is a schematic diagram of mask etching patterns according to a comparative example and an embodiment of the present invention.

As shown in FIGS. 7 to 8 , it is more advantageous to perform etching only on one side (eg, the upper side) of the mask metal film 110 . If etching is performed simultaneously on both sides, the thickness of the mask metal film 110 may be uneven, and it may be difficult to obtain the desired shape of the mask pattern P. Wet etching WE is performed on one side, and since the wet etching is performed multiple times, it is very important that the etchant does not leak to the other side (eg, underside) of the mask metal film 110 .

FIG. 11( a ) is a comparative example in which the mask metal film 110 is bonded to the template 50 by interposing the temporary bonding portion 55 without the first insulating portion 23 . As detailed in (g) of FIG. 8 , since the thickness of the first mask pattern P1 ( P1 - 1 , P1 - 2 ) is relatively thick and the width of the second mask pattern P2 defines the width of the pixel, the second mask The width of the pattern P2 is preferably close to 0 μm.

Therefore, although the first mask pattern P1 is preferably formed with the maximum depth, even for the same wet etching WE1-1 and WE1-2, the degree of etching varies depending on the etched position. For example, the first mask pattern P1 -1 is shown with the first mask pattern P1-2. Like the first mask pattern P1 - 2 ′ on the right side of FIG. 11( a ), etching WE1 - 2 that penetrates the mask metal film 110 may occur.

In this case, the temporary adhesive portion 55 exposed at the lower portion may also be damaged (55 -> 55') by wet etching WE1-2. In addition to the temporary bond 55', the template 50 is also damaged.

In addition, when the etchant enters between the interface between the damaged temporary adhesive portion 55 ′ and the mask metal film 110 ( WE1 - 2 ′), the lower portion of the first mask pattern P1 will be further etched, thereby causing the size of the pattern to be formed. Too large or local amorphous defects.

Therefore, in the present invention, by further sandwiching the first insulating portion 23 between the mask metal film 110 and the temporary adhesive portion 55, the first mask pattern P1 can be formed during the first wet etching WE1 (WE1-1, WE1-2). -2 is formed through the mask metal film 110 , and the etching liquid can also be prevented from entering the lower surface of the mask metal film 110 .

Since the first insulating portion 23 includes at least any one of cured negative photoresist, epoxy-containing negative photoresist, and black matrix photoresist, even if the first wet etching WE1 process, the second The subsequent etching processes such as the second wet etching WE2 and the third wet etching WE3 can also withstand without being melted by the etching solution. Accordingly, even if the first mask pattern P1-2 penetrates the mask metal film 110, the width of the pattern is not enlarged, and there is an effect that the width of the 2-1 insulating portion M1 can be maintained.

12 is a schematic diagram of a state in which the template 50 is loaded on the frame 200 and the mask 100 is mapped to the unit region CR of the frame 200 according to an embodiment of the present invention. FIG. 12 illustrates the case where one mask 100 is mapped/attached to the cell region CR, but multiple masks 100 may be simultaneously mapped to all the cell regions CR so that the masks 100 are attached to the frame 200 . In this case, there may be a plurality of templates 50 for supporting the plurality of masks 100, respectively.

Template 50 can be transferred by vacuum chuck 90 . The surface opposite to the surface to which the template 50 of the mask 100 is adhered can be sucked and transferred by the vacuum chuck 90 . After the vacuum chuck 90 sucks the template 50 and turns it over, the process of transferring the template 50 to the frame 200 will not affect the bonding state and alignment state of the mask 100 .

Then, referring to FIG. 12 , the mask 100 may be corresponded to one mask unit region CR of the frame 200 . The correspondence between the mask 100 and the mask unit region CR can be achieved by loading the template 50 on the frame 200 (or the mask unit sheet portion 220 ). Whether the mask 100 corresponds to the mask unit region CR can be observed through a microscope while controlling the position of the template 50/vacuum chuck 90 . Since the template 50 presses the mask 100, the mask 100 and the frame 200 can be closely abutted.

In addition, the lower part of the frame 200 may be further arranged with a lower support body 70 . The lower supporter 70 may press the opposite surface of the mask cell region CR in contact with the mask 100 . At the same time, since the lower support body 70 and the template 50 press the edge of the mask 100 and the frame 200 (or the mask unit sheet part 220 ) in opposite directions to each other, the alignment state of the mask 100 can be maintained without be disrupted.

Next, the mask 100 may be irradiated with the laser L and attached to the frame 200 based on laser welding. The welded portion of the mask being laser welded will generate a weld bead WB, which may be of the same material as the mask 100/frame 200 and connected integrally with the mask 100/frame 200.

13 is a schematic diagram of a process of separating the mask 100 from the template 50 after attaching the mask 100 to the frame 200 according to an embodiment of the present invention.

13, after the mask 100 is attached to the frame 200, the mask 100 and the template 50 may be debonded. The mask 100 and the template 50 can be separated by at least one of heating ET, chemical treatment CM, application of ultrasonic waves US, and application of ultraviolet UV to the temporary adhesive portion 55 . Since the mask 100 remains attached to the frame 200, only the template 50 can be lifted. As an example, if thermal ET at a temperature higher than 85°C-100°C is applied, the viscosity of the temporary adhesive portion 55 is reduced, and the adhesive force between the mask 100 and the template 50 is weakened, so that the mask 100 and the template 50 can be separated. As another example, the mask 100 and the template 50 may be separated by immersing the temporary bond 55 in CM in chemicals such as IPA, acetone, ethanol, etc. to dissolve, remove, etc. the temporary bond 55 . As another example, the adhesive force between the mask 100 and the template 50 is weakened by applying ultrasonic waves US or ultraviolet UV, so that the mask 100 and the template 50 can be separated.

In addition, when the mask metal film 110 or the mask 100 is bonded to the template 50, if the mask metal film 110 or the mask 100 is bonded to the template 50 in a state where a tensile force is applied to the side surface direction of the mask 100, the template will be removed from the template. The tensile force exerted on the mask 100 when the mask 100 is separated can be converted into tension that tightens both sides of the mask 100 while being released. Thereby, by applying tension to the frame 200 (mask unit sheet portion 220 ), the mask 100 can be attached in a tight state.

14 is a schematic diagram of a state in which the mask 100 is attached to the frame 200 and the insulating portion 23 is removed, according to an embodiment of the present invention. FIG. 14 illustrates a state in which all the masks 100 are attached to the cell region CR of the frame 200 . Although the masks 100 may be attached one by one and then the templates 50 may be separated, all the masks 100 may be attached and then all the templates 50 may be separated.

The template 50 is separated from the mask 100 by the vacuum chuck 90 , and the first insulating portion 23 remains on the mask 100 . If the first insulating portion 23 is a cured photoresist, it is difficult to remove by a wet etching process. Therefore, in order to remove the first insulating portion 23 on the mask 100, at least one of plasma PS and ultraviolet UV may be applied. A process of removing only the first insulating portion 23 by applying atmospheric pressure plasma or vacuum plasma PS or ultraviolet UV after loading the frame-integrated masks 100 and 200 into another chamber (not shown) may be performed.

As described above, the present invention has the ability to accurately control the mask pattern in the process of forming the mask pattern by using the mask support template including the mask metal film 110/first insulating portion 23/temporary adhesive portion 55/template 50 The effect of size and position of P.

15 is a schematic diagram of a mask according to other embodiments of the present invention.

Referring to FIG. 1 , in the prior art, in order to attach the strip mask 10 to the frame 20 after being stretched, welding W is performed only on both sides (left/right) of the strip mask 10 . Since only two sides of the strip mask 10 correspond to the frame 20, and the other two sides (upper/lower sides) are difficult to correspond to the frame 20, the welding W can only be performed on both sides. Therefore, there is a difference in the applied tension between the two sides (left/right side) to which the W is fixed by welding and the other two sides (upper/lower side). Both sides (left/right side) are tightly attached, while the other sides (upper/lower side) have problems of deformation such as sagging or wrinkles.

Therefore, it is a feature of the present invention that when the mask 100 is attached to the frame 200, all sides (eg, four sides, top, bottom, left, right) are welded instead of both sides. As shown in FIG. 15 , welding portions WP ( WP1 ), ie, regions to be welded, may be arranged at predetermined intervals along four sides of the mask 100 . If welding is performed along the four sides of the mask 100 (refer to FIG. 12 or FIG. 16 ), all the four sides of the mask are attached to the frame 200 , so that the four sides apply or bear the tension to the frame 200 uniformly. Thus, the present invention has the effect of preventing deformation on all sides of the mask 100 .

Furthermore, the present invention is characterized in that welding is further performed on the vertex portions of the four sides of the mask 100 . Referring to FIG. 15 , as a region to be welded, the welded portion WP will be arranged in a quadrangular shape as a whole. Therefore, after the mask 100 is welded to the frame 200, there is a danger of stress concentration at the welded quadrangular apex portion. If stress is concentrated in the vertex portion and wrinkles are generated, an alignment error may occur in the mask pattern P as a whole. Therefore, the vertex portion of the mask 100 can be welded by further disposing the welding portion WP2.

The pitch of the welded portions WP2 may be smaller than the pitch between the welded portions WP1. For example, if the pitch between the welded portions WP1 is 2 mm, the pitch between the welded portions WP2 can be set to 1 mm. Furthermore, even if the pitch of the welded portion WP2 is the same as the pitch of the welded portion WP1, a larger number of welded portions WP2 can be arranged per unit area. In FIG. 15 , the arrangement of three welded portions WP2 in the horizontal direction and three in the vertical direction is illustrated, but the arrangement form of the welded portions WP2 is not limited. Since the welding part WP2 is arranged more closely than the welding part WP1, more welding beads WB generated by welding can be produced at the vertex part of the mask 100, and the mask 100 and the frame 200 can be stably fixedly attached, Therefore, even if the remaining welded portion WP1 is welded, there is a further effect that deformation such as wrinkles and sagging of the mask 100 can be prevented.

In addition, when the welding portion WP ( WP1 , WP2 ) is welded by irradiating a laser, the thickness of the welding portion WP may be larger than the thickness of the remaining region in order to sufficiently form the bead WB and stably welding.

16 is a schematic diagram of a process of loading a template onto a frame to make a mask correspond and attach to a cell area of the frame, according to another embodiment of the present invention.

The process of loading the template 50 according to another embodiment onto the frame 200 to correspond/attach the mask 100 to the frame 200 is detailed in FIGS. 12 to 14 . However, referring to FIG. 16 , a plurality of welding portions WP are arranged at predetermined intervals on the dummy portions DM on the four sides (upper, lower, left, and right) of the mask 100 , and therefore, on the four sides (upper, lower, Left and right) may be formed with a plurality of laser passing holes 51 at predetermined intervals. In addition, the welding portion WP2 may be further formed at the vertex portion of the mask 100 , and correspondingly, the laser passing hole 51 may be further formed at the vertex portion of the template 50 .

When the mask 100 is irradiated with the laser L, the laser L may first irradiate the welding portion WP2 to make the apex of the mask 100 tightly fixed on the frame 200, and then irradiate the welding portion WP1 to complete the attachment process. Alternatively, the laser L may be irradiated at the same pitch to all sides of the mask 100, that is, at the pitch of the welding portion WP1 and firstly attached, and then further irradiated with the laser L to the welding portion WP2 to reinforce the attached state again . Alternatively, in the process of irradiating the laser L, the deformation state between the mask 100 and the frame 200 may be observed in real time, and the irradiation of the welding portion WP1 or the welding portion WP2 may be controlled at the same time.

As described above, the present invention has the effect of preventing the mask from being deformed such as wrinkles or twisting by arranging welding portions on the four sides of the mask or by adding vertex portions to the frame to stably weld and attach to the frame.

As mentioned above, although the preferred embodiments of the present invention have been described with reference to the accompanying drawings, the present invention is not limited by the embodiments. It undergoes various deformations and changes. The modified examples and modified examples should be regarded as belonging to the scope of the present invention and the appended claims.

23: The first insulating part 25: Second insulating part 50: Template (template) 50a: Center Section 50b: Edge 51: Laser through hole 55: Temporary bonding part 100: Mask 110: Mask metal film 200: Frame 210: Edge Frame Department 220: Mask Unit Sheet Department 221: Edge Sheet Section 223: First grid sheet section 225: Second Grid Sheet Section C: unit, mask unit CR: Mask Cell Region DM: dummy part, mask dummy part L: Laser M1, M2, M3: 2-1 insulating part, 2-2 insulating part, 2-3 insulating part M2": 2-2 insulation left after exposure P: mask pattern P1, P1-1, P1-2: first mask pattern P2, P2-1, P2-2: Second mask pattern WB: Weld Beads WE1, WE2, WE3: Wet etching WP, WP1, WP2: Welding part

FIG. 1 is a schematic diagram of the existing process of attaching a mask to a frame. 2 is a front view and a side cross-sectional view of a frame-integrated mask according to an embodiment of the present invention. 3 is a schematic diagram of a mask according to an embodiment of the present invention. 4 to 5 are schematic diagrams of a process of forming a mask by adhering a mask metal film on a template to fabricate a mask support template according to an embodiment of the present invention. FIG. 6 is a schematic diagram of the etching degree of the mask according to the existing mask manufacturing process and the comparative example. 7 to 8 are schematic diagrams of a manufacturing process of a mask according to an embodiment of the present invention. FIG. 9 is a schematic diagram of an etching degree of a mask according to an embodiment of the present invention. 10 is a schematic diagram of a manufacturing process of a mask support template according to an embodiment of the present invention. FIG. 11 is a schematic diagram of mask etching patterns according to a comparative example and an embodiment of the present invention. 12 is a schematic diagram of a state in which a template is loaded on a frame so that a mask corresponds to a unit area of the frame according to an embodiment of the present invention. 13 is a schematic diagram of the process of separating the mask and stencil after attaching the mask to the frame, according to an embodiment of the present invention. 14 is a schematic diagram of a state in which a mask is attached to a cell region of a frame and an insulating portion is removed, according to an embodiment of the present invention. 15 is a schematic diagram of a mask according to another embodiment of the present invention. 16 is a schematic diagram of a process of loading a template onto a frame to make a mask correspond and attach to a cell area of the frame, according to another embodiment of the present invention.

23: The first insulating part

25: Second insulating part

50: Template

50a: Center Section

50b: Edge

51: Laser through hole

55: Temporary bonding part

100: Mask

110: Mask metal film

P: mask pattern

Claims (22)

A method for manufacturing a template supported with a mask, comprising the following steps: (a) preparing a mask metal film with a first insulating portion formed on one side; (b) making the mask metal film by sandwiching the first insulating portion on the template Adhering to the upper face of the template; (c) fabricating a mask by forming a mask pattern on the mask metal film. The method for manufacturing a mask-supported template according to claim 1, wherein the temporary adhesive portion is formed on the upper surface of the template, and the mask metal film is bonded to the upper surface of the template by sandwiching the temporary adhesive portion and the first insulating portion. . The method for manufacturing a mask-supported template according to claim 1, wherein the first insulating portion comprises at least any one of cured negative photoresist and epoxy resin-containing negative photoresist. The method of manufacturing a mask-supported template according to claim 1, wherein the temporary adhesive portion is a heat-releasable adhesive or an adhesive sheet and a UV-irradiated-releasable adhesive or an adhesive sheet. The method for manufacturing a mask-supported template according to claim 1, wherein step (c) comprises the following steps: (c1) forming a patterned second insulating portion on the mask metal film; (c2) etching the first The part of the mask metal film exposed between the two insulating parts is formed and a mask pattern is formed; and (c3) the second insulating part is removed. The method for manufacturing a mask-supported template according to claim 1, wherein the step (c) includes the following steps: (c1) forming a patterned 2-1 insulating portion on the mask metal film; (c2) A first mask pattern with a predetermined depth is formed on one side of the mask metal film by wet etching; (c3) filling at least the 2-2 insulating portion in the first mask pattern; (c4) insulating the 2-2 by baking at least a portion of the portion volatilizes; (c5) exposing the upper part of the 2-1 insulating part, and leaving only the 2-2 insulating part located in the vertical lower part of the 2-1 insulating part; and (c6) moistening one side of the mask metal film etching to form a second mask pattern penetrating the other surface of the mask metal film from the first mask pattern. The method for manufacturing a mask-supported template according to claim 6, wherein the thickness of the first mask pattern is greater than the thickness of the second mask pattern, and the width of the first mask pattern is greater than the width of the second mask pattern . The method for manufacturing a mask-supported template according to claim 6, wherein the sum of the shapes of the first mask pattern and the second mask pattern as a whole presents a cone or an inverted cone. The method for manufacturing a mask-supported template according to claim 6, wherein between the step (c2) and the step (c3), the following steps are further included: (1) the first insulating part exposed between the 2-1 insulating parts. A 2-3 insulating portion is formed on at least a part of a mask pattern; (2) by further wet etching the first mask pattern, the angle formed by the side surface of the first mask pattern and the horizontal plane is reduced; (3) the second mask pattern is removed -3 insulating parts. The method for manufacturing a mask-supported template according to claim 9, wherein, in step (2), the angle formed by the side surface of the first mask pattern and the horizontal plane is 30° to 70°. A template supported with a mask, the template is used for supporting a mask for OLED pixel formation and corresponding to a frame, the template supported with the mask comprising: a template, the upper surface of which is formed with a temporary adhesive portion; and The mask has a mask pattern formed thereon and a first insulating portion formed on one side, and the template and the mask are bonded by sandwiching the temporary bonding portion and the first insulating portion. The mask-supported template of claim 11, wherein the mask is applied with a side The state of the tensile force in the face direction is bonded to the template. A mask manufacturing method, comprising the following steps: (a) preparing a mask metal film with a first insulating portion formed on one side; (b) adhering the mask metal film to the upper portion of the template by sandwiching the first insulating portion on the template (c) fabricating a mask by forming a mask pattern on the mask metal film; (d) separating the template from the mask. A method of manufacturing a frame-integrated mask, which is integrally formed with at least one mask and a frame for supporting the mask, wherein the method comprises the steps of: (a) preparing one side for forming A mask metal film having a first insulating portion; (b) bonding the mask metal film to the upper surface of the template by sandwiching the first insulating portion on the template; (c) by forming a mask pattern on the mask metal film (d) loading a template onto a frame having at least one mask cell region such that the mask corresponds to a mask cell region of the frame; and (e) attaching the mask to the frame. The method for manufacturing a frame-integrated mask according to claim 14, further comprising a step of removing the first insulating portion on the mask after the step (e). The method for manufacturing a frame-integrated mask according to claim 15, wherein the first insulating portion is removed by applying at least one of plasma and UV. The method for manufacturing a frame-integrated mask according to claim 14, wherein, in step (e), the mask is attached to the frame by irradiating a laser to first welding portions arranged on four sides of the mask. . The method for manufacturing a frame-integrated mask according to claim 17, wherein second welding portions are further arranged at the vertex portions on four sides of the dummy region of the mask, and the arrangement interval of the second welding portions is smaller than that of the first welding portions. the arrangement interval of the part, In step (e), the mask is attached to the frame by irradiating the first welding portion and the second welding portion with a laser. The method for manufacturing a frame-integrated mask according to claim 17, wherein second welding portions are further arranged on the apexes of the four sides of the dummy region of the mask, and the number of the second welding portions arranged per unit area is In step (e), the mask is attached to the frame by irradiating a laser to the first welding part and the second welding part more than the number arranged in the unit area of the first welding part. The method for manufacturing a frame-integrated mask according to claim 17, wherein the mask is adhered to the template in a state in which a tensile force in the lateral direction is applied. The method for manufacturing a frame-integrated mask according to claim 20, wherein after step (b), any one of heating, chemical treatment, ultrasonic application, and UV application is performed on the temporary adhesive portion, so that The mask is detached from the stencil, and if the stencil is detached from the mask, the tensile force exerted on the mask is applied to the frame. A method of manufacturing a frame-integrated mask, which is integrally formed with at least one mask and a frame for supporting the mask, wherein the method comprises the steps of: (a) applying the claim The stencil of 11 is loaded onto a frame having at least one mask unit area such that the mask corresponds to the mask unit area of the frame; and (b) attaching the mask to the frame.

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