TWI825149B - Producing method of mask integrated frame and frame - Google Patents

Producing method of mask integrated frame and frame Download PDF

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TWI825149B
TWI825149B TW108128965A TW108128965A TWI825149B TW I825149 B TWI825149 B TW I825149B TW 108128965 A TW108128965 A TW 108128965A TW 108128965 A TW108128965 A TW 108128965A TW I825149 B TWI825149 B TW I825149B
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mask
frame
metal film
template
manufacturing
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TW202013447A (en
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李裕進
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南韓商Tgo科技股份有限公司
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Priority claimed from KR1020190016248A external-priority patent/KR102188948B1/en
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/20Bonding
    • B23K26/21Bonding by welding
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J191/00Adhesives based on oils, fats or waxes; Adhesives based on derivatives thereof
    • C09J191/06Waxes
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00Adhesives in the form of films or foils
    • C09J7/20Adhesives in the form of films or foils characterised by their carriers
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • C23F1/02Local etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40Thermal treatment, e.g. annealing in the presence of a solvent vapour

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  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
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Abstract

本發明是關於框架一體型遮罩的製造方法。[解決手段]本發明涉及的框架一體型遮罩的製造方法,其使至少一個遮罩與用於支撑遮罩的框架形成爲一體,其中該方法包括以下步驟:(a)提供具有至少一個遮罩單元區域的框架;(b)提供遮罩;(c)使遮罩與框架的遮罩單元區域對應;以及(d)向遮罩的焊接部照射鐳射,以使遮罩黏合到框架上,與設有遮罩單元區域的框架角部相隔預定距離的部分上形成有多個吸附孔,在步驟(c)中,藉由多個吸附孔向與框架接觸的遮罩施加吸附力,以使遮罩密接於框架上。The present invention relates to a method for manufacturing a frame-integrated mask. [Solution] The present invention relates to a method for manufacturing a frame-integrated mask, which integrates at least one mask with a frame for supporting the mask, wherein the method includes the following steps: (a) providing at least one mask with (b) providing the mask; (c) aligning the mask with the mask unit area of the frame; and (d) irradiating the laser to the welded portion of the mask to bond the mask to the frame, A plurality of adsorption holes are formed at a predetermined distance from the corner of the frame where the mask unit area is provided. In step (c), adsorption force is applied to the mask in contact with the frame through the plurality of adsorption holes, so that the The mask is tightly attached to the frame.

Description

框架一體型遮罩的製造方法及框架Manufacturing method and frame of frame-integrated mask

本發明是關於框架一體型遮罩的製造方法及框架。更加詳細而言,可以使遮罩不發生變形且可以穩定地得到支撑並移動,使遮罩黏合於框架時,能够改善遮罩與框架的黏著性,且使各個遮罩之間的對準(align)精確的框架一體型遮罩的製造方法及框架。The present invention relates to a manufacturing method and frame of a frame-integrated mask. More specifically, the mask can be supported and moved stably without deformation. When the mask is bonded to the frame, the adhesion between the mask and the frame can be improved, and the alignment between the masks can be improved ( align) precise frame-integrated mask manufacturing method and frame.

作爲OLED製造工藝中形成像素的技術,主要使用FMM(Fine Metal Mask)方法,該方法將薄膜形式的金屬遮罩(Shadow Mask,陰影遮罩)緊貼於基板並在所需位置上沉積有機物。As a technology for forming pixels in the OLED manufacturing process, the FMM (Fine Metal Mask) method is mainly used. This method attaches a metal mask (Shadow Mask) in the form of a thin film to the substrate and deposits organic matter at the desired location.

在現有的OLED製造工藝中,將遮罩製造成條狀、板狀等之後,將遮罩焊接固定到OLED像素沉積框架並使用。一個遮罩上可以具備與一個顯示器對應的多個單元。另外,爲了製造大面積OLED,可將多個遮罩固定於OLED像素沉積框架,在固定於框架的過程中,拉伸各個遮罩,以使其變得平坦。調節拉伸力以使遮罩的整體部分變得平坦是非常困難的作業。特別是,爲了使各個單元全部變得平坦,同時對準尺寸僅爲數μm至數十μm的遮罩圖案,需要微調施加到遮罩各側的拉伸力並且實時確認對準狀態的高度作業要求。In the existing OLED manufacturing process, after the mask is manufactured into a strip shape, a plate shape, etc., the mask is welded and fixed to the OLED pixel deposition frame and used. A mask can have multiple units corresponding to one display. In addition, in order to manufacture large-area OLEDs, multiple masks can be fixed to the OLED pixel deposition frame. During the process of fixing to the frame, each mask is stretched to make it flat. Adjusting the stretch to flatten an entire section of the mask is a very difficult task. In particular, in order to make all cells flat while aligning a mask pattern with a size of only a few μm to tens of μm, a high degree of work is required to fine-tune the tensile force applied to each side of the mask and confirm the alignment status in real time. Require.

儘管如此,在將多個遮罩固定於一個框架過程中,仍然存在遮罩之間以及遮罩單元之間對準不好的問題。另外,在將遮罩焊接固定於框架的過程中,遮罩膜的厚度過薄且面積大,因此存在遮罩因荷重而下垂或者扭曲的問題,以及焊接過程中因焊接部分發生的皺紋、毛邊(burr)等使遮罩單元的對準錯開的問題等。Nonetheless, in fixing multiple masks to a frame, there is still the problem of poor alignment between masks and between mask units. In addition, during the process of welding and fixing the mask to the frame, the thickness of the mask film is too thin and the area is large. Therefore, there are problems such as the mask sagging or twisting due to the load, and wrinkles and burrs caused by the welded parts during the welding process. (burr) and other problems that cause the alignment of the mask unit to shift.

在超高清的OLED中,現有的QHD(Quarter High Definition)畫質為500-600PPI(pixel per inch),像素的尺寸達到約30-50μm,而4K UHD(Ultra High Definition)、8K UHD高清具有比之更高的~860PPI,~1600PPI等的解析度。如此,考慮到超高清的OLED的像素尺寸,需要將各單元之間的對準誤差縮減為數μm程度,超出這一誤差將導致産品的不良,所以産率可能極低。因此,需要開發能够防止遮罩的下垂或者扭曲等變形並且使對準精確的技術,以及將遮罩固定於框架的技術等。Among ultra-high definition OLEDs, the existing QHD (Quarter High Definition) picture quality is 500-600PPI (pixel per inch), and the pixel size reaches about 30-50 μm, while 4K UHD (Ultra High Definition) and 8K UHD have higher than The higher resolution is ~860PPI, ~1600PPI, etc. In this way, considering the pixel size of ultra-high-definition OLED, the alignment error between each unit needs to be reduced to a few μm. Exceeding this error will lead to product defects, so the yield may be extremely low. Therefore, there is a need to develop technology that can prevent deformation such as sagging or twisting of the mask and achieve accurate alignment, as well as technology that can fix the mask to the frame, and the like.

發明欲解决之課題 因此,本發明是爲瞭解决上述現有技術中的問題而提出的,使遮罩黏合於框架上時,能夠防止遮罩發生變形且改善遮罩與框架的黏著性之框架一體型遮罩的製造方法及框架。The problem to be solved by the invention Therefore, the present invention is proposed to solve the above-mentioned problems in the prior art. When the mask is bonded to the frame, it is possible to prevent the mask from deforming and improve the adhesion between the mask and the frame. The manufacture of a frame-integrated mask Methods and frameworks.

又,本發明的目的在於提供一種遮罩與框架可構成一體型構造之框架一體型遮罩的製造方法。Another object of the present invention is to provide a method for manufacturing a frame-integrated mask in which the mask and the frame can form an integrated structure.

又,本發明的目的在於提供一種防止遮罩下垂或扭曲等的變形,並且可準確地進行對準之框架一體型遮罩的製造方法及框架。Furthermore, an object of the present invention is to provide a method and frame for manufacturing a frame-integrated mask that prevents deformation such as sagging or twisting of the mask and enables accurate alignment.

又,本發明的目的在於提供一種明顯縮短製造時間,並且使産率顯著提升之框架一體型遮罩的製造方法。Furthermore, an object of the present invention is to provide a method for manufacturing a frame-integrated mask that significantly shortens the manufacturing time and significantly improves the productivity.

解決課題之方法 本發明的上述目的藉由一種框架一體型遮罩的製造方法達成,其使至少一個遮罩與用於支撐遮罩的框架形成為一體,其中該方法包括以下步驟:(a)提供具有至少一個遮罩單元區域的框架;(b)提供遮罩;(c)使遮罩與框架的遮罩單元區域對應;以及(d)向遮罩的焊接部照射鐳射,以使遮罩黏合到框架上,與設有遮罩單元區域的框架角部相隔預定距離的部分上形成有多個吸附孔,步驟(c)中,藉由多個吸附孔向與框架接觸的遮罩施加吸附力,以使遮罩密接於框架上。Ways to solve problems The above object of the present invention is achieved by a method for manufacturing a frame-integrated mask, which integrates at least one mask with a frame for supporting the mask, wherein the method includes the following steps: (a) providing at least one a frame that masks the unit area; (b) providing the mask; (c) aligning the mask with the mask unit area of the frame; and (d) irradiating a laser to the welded portion of the mask to bond the mask to the frame , a plurality of adsorption holes are formed at a predetermined distance from the corner of the frame where the mask unit area is provided. In step (c), an adsorption force is applied to the mask in contact with the frame through the plurality of adsorption holes, so that the The mask is tightly attached to the frame.

步骤(b)可包括以下步驟:(b1)在導電性基材的至少一面以電鑄(electroforming)方式形成遮罩金屬膜;(b2)從導電性基材分離遮罩金屬膜;(b3)將遮罩金屬膜黏合於一面形成有臨時黏合部的模板上;以及(b4)在遮罩金屬膜上形成遮罩圖案以製造遮罩。Step (b) may include the following steps: (b1) electroforming a mask metal film on at least one side of the conductive substrate; (b2) separating the mask metal film from the conductive substrate; (b3) Bond the mask metal film to a template with a temporary adhesive portion formed on one side; and (b4) form a mask pattern on the mask metal film to manufacture a mask.

步骤(b)可包括以下步驟:(b1)提供遮罩金屬膜,該遮罩金屬膜為經軋延(rolling)制造的薄膜(sheet);(b2)將遮罩金屬膜黏合到一面形成有臨時黏合部的模板上;(b3)在遮罩金屬膜上形成遮罩圖案以製造遮罩。Step (b) may include the following steps: (b1) providing a mask metal film, which is a film (sheet) manufactured by rolling; (b2) bonding the mask metal film to one side to form a On the template of the temporary bonding part; (b3) Form a mask pattern on the mask metal film to manufacture the mask.

步驟(c)可以為將模板裝載於框架上並使遮罩與框架的遮罩單元區域對應之步驟。Step (c) may be a step of loading the template on the frame and making the mask correspond to the mask unit area of the frame.

在步驟(c)中,下部支撐體可佈置於框架的下部,該下部支撐體包括用於發生吸壓的吸附部。In step (c), the lower support body may be arranged at the lower part of the frame, and the lower support body includes an adsorption part for generating suction pressure.

下部支撐體可擠壓用於裝載遮罩的遮罩單元區域的相反面。The lower support can press the opposite side of the mask unit area for loading the mask.

吸附孔可形成於不與遮罩的焊接部重疊之部分上。The adsorption hole may be formed on a portion that does not overlap with the welding portion of the mask.

導電性基材為晶圓(wafer),在步骤(b1)與步驟(b2)之间進一步執行熱處理遮罩金屬膜的工藝。The conductive substrate is a wafer, and a heat treatment process of masking the metal film is further performed between step (b1) and step (b2).

在步骤(b1)與步驟(b2)之间,還包括縮減模板上黏合的遮罩金屬膜的厚度之步骤,遮罩金屬膜之厚度縮減能夠以CMP(Chemical Mechanical Polishing)、化學濕蝕刻(chemical wet etching)、幹蝕刻(dry etching)中任意一個方法執行。Between step (b1) and step (b2), a step of reducing the thickness of the mask metal film adhered to the template is also included. The thickness of the mask metal film can be reduced by CMP (Chemical Mechanical Polishing), chemical wet etching (chemical wet etching) Perform any one of wet etching and dry etching.

臨時黏合部可以是基於加熱可分離的黏合劑或者黏合片材,基於照射UV可分離的黏合劑或者黏合片材。The temporary adhesive part may be an adhesive or an adhesive sheet that is detachable by heating, or an adhesive or an adhesive sheet that is detachable by UV irradiation.

在遮罩金屬膜上形成遮罩圖案以製造遮罩之步驟包括:(1)在遮罩金屬膜上形成圖案化之絕緣部;(2)對絕緣部之間露出的遮罩金屬膜部分進行蝕刻以形成遮罩圖案;以及(3)去除絕緣部。The steps of forming a mask pattern on the mask metal film to manufacture the mask include: (1) forming a patterned insulating portion on the mask metal film; (2) performing a lithography on the exposed portion of the mask metal film between the insulating portions. Etching to form a mask pattern; and (3) removing the insulating portion.

模板可包括晶圓(wafer)、玻璃(glass)、氧化矽(silica)、耐熱玻璃、石英(quartz)、氧化鋁(Al2 O3 )、硼矽酸玻璃(borosilicate glass)、氧化鋯(zirconia)中的任意一種材料。The template may include wafer, glass, silica, heat-resistant glass, quartz, aluminum oxide (Al 2 O 3 ), borosilicate glass, zirconia ) any material.

從模板上部照射的鐳射穿過鐳射貫穿孔並可照射到在遮罩的焊接部上。The laser irradiated from the upper part of the template passes through the laser through hole and can be irradiated onto the welding portion of the mask.

還可包括在步驟(d)之後對臨時黏合部進行加熱、化學處理、施加超聲波中的任意一個,藉以分離遮罩與模板之步驟。It may also include a step of heating, chemically treating, or applying ultrasonic waves to the temporarily bonded portion after step (d) to separate the mask and the template.

框架可包括邊緣框架部與遮罩單元片材部,遮罩單元片材部可包括邊緣片材部;至少一個第一柵格片材部,其沿第一方向延伸形成且兩端連接於邊緣片材部;以及至少一個第二柵格片材部,其沿著與第一方向垂直之第二方向延伸形成並與第一柵格片材部交叉,且兩端連接於邊緣片材部。The frame may include an edge frame part and a mask unit sheet part, and the mask unit sheet part may include an edge sheet part; at least one first grid sheet part extending along the first direction and having both ends connected to the edge. sheet part; and at least one second grid sheet part, which extends along a second direction perpendicular to the first direction and intersects the first grid sheet part, and has both ends connected to the edge sheet part.

遮罩與框架可以是恆範鋼(invar)、超恆範鋼(super invar)、鎳、鎳-鈷中任意一種材料。The mask and frame can be made of any material including invar, super invar, nickel, or nickel-cobalt.

另外,本發明的上述目的藉由一種框架而達成,其在由多個遮罩與用於支撐遮罩的框架一體形成之框架一體型遮罩中使用,其中該框架包括:邊緣框架部,其包括中空區域;遮罩單元片材部,其沿第一方向及與第一方向垂直之第二方向中的至少一個方向具備多個遮罩單元區域,且連接於邊緣框架部,遮罩單元片材部上形成有多個吸附孔。In addition, the above object of the present invention is achieved by a frame used in a frame-integrated cover formed by a plurality of covers and a frame for supporting the cover, wherein the frame includes: an edge frame portion, It includes a hollow area; a mask unit sheet portion, which has a plurality of mask unit areas along at least one of a first direction and a second direction perpendicular to the first direction, and is connected to the edge frame portion; the mask unit sheet A plurality of adsorption holes are formed on the material part.

與設有遮罩單元區域的框架角部相隔預定距離的部分上形成有多個吸附孔, 吸附孔可形成於不與遮罩的焊接部重疊的部分上。A plurality of adsorption holes are formed at a predetermined distance from the corner of the frame where the mask unit area is provided. The adsorption holes may be formed in a portion that does not overlap with the welded portion of the mask.

框架的下部還可佈置有用於發生吸壓的吸附部。The lower part of the frame may also be provided with an adsorption part for generating suction pressure.

下部支撐體上形成有至少一個真空通道,該真空通道能夠將外部的吸壓發生裝置上發生的吸壓傳遞給吸附部。At least one vacuum channel is formed on the lower support body, and the vacuum channel can transmit the suction pressure generated on the external suction pressure generating device to the adsorption part.

發明效果 據如上構成的本發明,使遮罩黏合於框架上時,能夠防止遮罩發生變形且改善遮罩與框架的黏著性。Invention effect According to the present invention configured as above, when the mask is adhered to the frame, deformation of the mask can be prevented and the adhesion between the mask and the frame can be improved.

又,根據本發明,遮罩與框架可構成一體型結構。Furthermore, according to the present invention, the cover and the frame can form an integrated structure.

又,根據本發明,可防止遮罩下垂或扭曲等的變形,並且可準確地進行對準。Furthermore, according to the present invention, it is possible to prevent the mask from deforming such as sagging or twisting, and to accurately align the mask.

又,根據本發明,可使製造時間顯著地縮短,且使產率顯著上昇。Furthermore, according to the present invention, the production time can be significantly shortened and the productivity can be significantly increased.

後述的對於本發明的詳細說明將參照附圖,該附圖將能够實施本發明的特定實施例作爲示例示出。充分詳細地說明這些實施例,以使所屬技術領域中具有通常知識者能夠實施本發明。應當理解,本發明的各種實施例雖然彼此不同,但是並非相互排斥。例如,在此記載的特定形狀、結構及特性與一實施例有關,在不脫離本發明的精神及範圍的情況下,能夠實現為其他實施例。另外,應當理解,各個公開的實施例中的個別構成要素的位置或配置,在不脫離本發明的精神及範圍的情況下,能夠進行變更。因此,後述的詳細說明不應被視爲具有限制意義,只要適當地說明,則本發明的範圍僅由所附的申請專利範圍及與其等同的所有範圍限定。圖式中相似的符號從多方面表示相同或相似的功能,爲了方便起見,長度、面積、厚度及其形狀可以誇大表示。The following detailed description of the invention will be described with reference to the accompanying drawings, which illustrate by way of example specific embodiments in which the invention can be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the invention. It should be understood that the various embodiments of the invention, while different from each other, are not mutually exclusive. For example, the specific shapes, structures, and characteristics described here relate to one embodiment, and can be implemented in other embodiments without departing from the spirit and scope of the invention. In addition, it should be understood that the positions or arrangements of individual components in each disclosed embodiment can be changed without departing from the spirit and scope of the present invention. Therefore, the following detailed description should not be regarded as limiting, and as long as it is properly stated, the scope of the present invention is limited only by the appended claims and all equivalents thereto. Similar symbols in the drawings represent the same or similar functions in many aspects. For convenience, the length, area, thickness and shape can be exaggerated.

以下,將參照圖式對本發明的優選實施例進行詳細說明,以便所屬技術領域中具有通常知識者能够容易地實施本發明。Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings so that those with ordinary skill in the art can easily implement the present invention.

圖1是示出現有的OLED像素沉積用遮罩的概略圖。FIG. 1 is a schematic diagram showing a conventional mask for OLED pixel deposition.

參照圖1,現有的遮罩10可以以條式(Stick-Type)或者板式(Plate-Type)製造。圖1的(a)中示出的遮罩10作爲條式遮罩,可以將條的兩側焊接固定於OLED像素沉積框架並使用。圖1的(b)中示出的遮罩100作爲板式(Plate-Type)遮罩,可以使用於大面積的像素形成工藝。Referring to FIG. 1 , the existing mask 10 can be manufactured in a stick-type or a plate-type. The mask 10 shown in (a) of FIG. 1 is a strip mask, and can be used by welding and fixing both sides of the strip to the OLED pixel deposition frame. The mask 100 shown in (b) of FIG. 1 is a plate-type mask and can be used in a large-area pixel formation process.

遮罩10的主體(Body,或者遮罩膜11)具備多個顯示單元C。一個單元C與智慧手機等的一個顯示器(display)對應。單元C中形成有像素圖案P,以便與顯示器的各個像素對應。放大單元C時,顯示與R、G、B對應的多個像素圖案P。作為一例,在單元C中形成有像素圖案P,以便具有70×140解析度。即,大量的像素圖案P形成集合,以構成一個單元C,並且多個單元C可以形成於遮罩10上。The main body (Body, or mask film 11) of the mask 10 is provided with a plurality of display units C. One unit C corresponds to one display (display) of a smartphone or the like. A pixel pattern P is formed in the cell C so as to correspond to each pixel of the display. When unit C is enlarged, multiple pixel patterns P corresponding to R, G, and B are displayed. As an example, the pixel pattern P is formed in the unit C so as to have a resolution of 70×140. That is, a large number of pixel patterns P form a set to constitute one unit C, and a plurality of units C may be formed on the mask 10 .

圖2是示出現有的將遮罩10黏合於框架20的過程的概略圖。圖3是示出在現有的拉伸F1~F2遮罩10的過程中發生單元之間的對準誤差的概略圖。以圖1的(a)示出的具備6個單元C(C1~C6)的條式遮罩10為例進行說明。FIG. 2 is a schematic diagram showing a conventional process of bonding the mask 10 to the frame 20 . FIG. 3 is a schematic diagram illustrating the alignment error between units that occurs during stretching of the conventional masks F1 to F2 10 . An explanation will be given taking the strip mask 10 including six units C (C1 to C6) shown in FIG. 1(a) as an example.

參照圖2的(a),首先,應將條式遮罩10平坦地展開。沿著條式遮罩10的長軸方向施加拉伸力F1~F2,隨著拉伸,展開條式遮罩10。在該狀態下,將條式遮罩10裝載於方框形狀的框架20上。條式遮罩10的單元C1~C6將位於框架20的框內部空白區域部分。框架20的尺寸可以足以使一個條式遮罩10的單元C1~C6位於框內部空白區域,也可以足以使多個條式遮罩10的單元C1~C6位於框內部空白區域。Referring to (a) of FIG. 2 , first, the strip mask 10 should be unfolded flatly. Tensile forces F1 to F2 are applied along the long axis direction of the strip mask 10, and as the strip mask 10 is stretched, the strip mask 10 is unfolded. In this state, the strip mask 10 is mounted on the square-shaped frame 20 . The units C1 to C6 of the strip mask 10 will be located in the blank area inside the frame 20 . The size of the frame 20 may be sufficient to allow units C1 to C6 of one strip mask 10 to be located in the blank area inside the frame, or may be large enough to allow units C1 to C6 of multiple strip masks 10 to be located in the blank area inside the frame.

參照圖2的(b),微調施加到條式遮罩10的各側的拉伸力F1~F2,同時對準後,隨著焊接W條式遮罩10側面的一部分,將條式遮罩10和框架20彼此連接。圖2的(c)示出彼此連接的條式遮罩10和框架的側截面。Referring to (b) of Figure 2, fine-tune the tensile forces F1~F2 applied to each side of the strip mask 10, and after aligning at the same time, along with welding a part of the side of the strip mask 10, the strip mask 10 is 10 and frame 20 are connected to each other. (c) of FIG. 2 shows a side section of the strip mask 10 and the frame connected to each other.

參照圖3,儘管微調施加到條式遮罩10的各側的拉伸力F1~F2,但是顯示出遮罩單元C1~C3彼此之間對準不好的問題。例如,單元C1~C3的圖案P之間的距離D1~D1''、D2~D2''彼此不同,或者圖案P歪斜。由於條式遮罩10具有包括多個(作為一例,為6個)單元C1~C6的大面積,且具有數十μm的非常薄的厚度,因此容易因荷重而下垂或者扭曲。另外,調節拉伸力F1~F2,以使各個單元C1~C6全部變得平坦,同時通過顯微鏡實施確認各個單元C1~C6之間的對準狀態是非常困難的作業。Referring to Figure 3, although the tensile forces F1~F2 applied to each side of the strip mask 10 are fine-tuned, the problem of poor alignment of the mask units C1~C3 with each other is shown. For example, the distances D1 to D1'' and D2 to D2'' between the patterns P of the cells C1 to C3 are different from each other, or the patterns P are skewed. Since the strip mask 10 has a large area including a plurality (for example, 6 units) of cells C1 to C6 and has a very thin thickness of several dozen μm, it is easy to sag or twist due to load. In addition, it is a very difficult task to adjust the tensile forces F1 to F2 so that all the units C1 to C6 become flat, and at the same time to confirm the alignment status of the units C1 to C6 through a microscope.

因此,拉伸力F1~F2的微小誤差可能引起條式遮罩10各單元C1~C3的拉伸或者展開程度的誤差,由此,導致遮罩圖案P之間的距離D1~D1''、D2~D2''不同。雖然完美地對準以使誤差為0是非常困難的,但是爲了避免尺寸爲數μm至數十μm的遮罩圖案P對超高清OLED的像素工藝造成壞影響,對準誤差優選不大於3μm。將如此相鄰的單元之間的對準誤差稱為像素定位精度(pixel position accuracy,PPA)。Therefore, slight errors in the tensile force F1~F2 may cause errors in the degree of stretching or expansion of each unit C1~C3 of the strip mask 10, thereby causing the distance D1~D1'', D2~D2'' are different. Although it is very difficult to align perfectly so that the error is 0, in order to avoid the mask pattern P with a size of several μm to tens of μm from having a bad impact on the pixel process of ultra-high-definition OLED, the alignment error is preferably no more than 3 μm. The alignment error between such adjacent units is called pixel position accuracy (PPA).

另外,將大概6-20個條式遮罩10分別連接在一個框架20,同時使多個條式遮罩10之間,以及條式遮罩10的多個單元C-C6之間的對準狀態精確是非常困難的作業,並且只能增加基於對準的工藝時間,這成爲降低生産性的重要理由。In addition, approximately 6-20 strip masks 10 are connected to one frame 20 respectively, and at the same time, the alignment between the multiple strip masks 10 and the multiple units C-C6 of the strip mask 10 is achieved. State accuracy is a very difficult task and only increases the process time based on alignment, which is an important reason for lowering productivity.

另一方面,將條式遮罩10連接固定到框架20後,施加到條式遮罩10的拉伸力F1~F2能够反向地作用於框架20。即,由於拉伸力F1~F2而繃緊拉伸的條式遮罩10連接在框架20後,能夠將張力(tension)作用於框架20。通常,該張力不大,不會對框架20產生大的影響,但是在框架20的尺寸實現小型化且剛性變低的情況下,這種張力可能使框架20細微變形。如此,可能發生破壞多個單元C~C6間的對準狀態的問題。On the other hand, after the strip mask 10 is connected and fixed to the frame 20 , the tensile forces F1 to F2 applied to the strip mask 10 can act on the frame 20 in the opposite direction. That is, after the strip mask 10 tautly stretched by the tensile forces F1 to F2 is connected to the frame 20 , tension can be applied to the frame 20 . Normally, this tension is not large and does not have a large impact on the frame 20 . However, when the size of the frame 20 is reduced and its rigidity becomes low, this tension may slightly deform the frame 20 . In this way, a problem may occur in which the alignment state between the plurality of units C to C6 is destroyed.

鑒於此,本發明提出能够使遮罩100與框架200形成一體式結構的框架200以及框架一體型遮罩。與框架200形成一體的遮罩100不僅防止發生下垂或者扭曲等變形,並且能夠與框架200精確地對準。當遮罩100連接到框架200時,不對遮罩100施加任何拉伸力,因此遮罩100連接到框架200後,可以不對遮罩200施加引起變形的張力。並且,本發明具有能夠顯著地縮短將遮罩100一體地連接到框架200上的製造時間,並且顯著提升産率之優點。In view of this, the present invention proposes a frame 200 and a frame-integrated mask that enable the mask 100 and the frame 200 to form an integrated structure. The mask 100 integrated with the frame 200 not only prevents deformation such as sagging or twisting, but also can be accurately aligned with the frame 200 . When the mask 100 is connected to the frame 200, no tensile force is applied to the mask 100. Therefore, after the mask 100 is connected to the frame 200, no tension causing deformation may be applied to the mask 200. Furthermore, the present invention has the advantage of being able to significantly shorten the manufacturing time for integrally connecting the mask 100 to the frame 200 and significantly improve the productivity.

圖4是示出本發明之一實施例涉及的框架一體型遮罩的主視圖(圖4的(a))及側截面圖(圖4的(b)),圖5是示出本發明之一實施例涉及的框架的主視圖(圖5的(a))及側截面圖(圖5的b)。4 is a front view ((a) of FIG. 4) and a side cross-sectional view ((b) of FIG. 4) showing a frame-integrated cover according to an embodiment of the present invention. FIG. A front view ((a) of FIG. 5) and a side cross-sectional view (b) of the frame according to an embodiment.

參照圖4以及圖5,框架一體型遮罩可以包括多個遮罩100以及一個框架200。換句話說,是將多個遮罩100分別黏合於框架200的形態。以下,爲了便於說明,以四角形狀的遮罩100為例進行說明,但是遮罩100在黏合於框架200之前,可以是兩側具備用於 夾持的突出部的條式遮罩形狀,遮罩100黏合於框架200後,可以去除突出部。Referring to FIGS. 4 and 5 , the frame-integrated mask may include multiple masks 100 and one frame 200 . In other words, the plurality of masks 100 are respectively bonded to the frame 200 . In the following, for convenience of explanation, the quadrangular mask 100 will be described as an example. However, before the mask 100 is bonded to the frame 200, it may be a strip mask shape with protrusions for clamping on both sides. After 100 is bonded to the frame 200, the protrusions can be removed.

各個遮罩100上形成有多個遮罩圖案P,一個遮罩100可以形成有一個單元C。一個遮罩單元C可以與智慧手機等的一個顯示器對應。A plurality of mask patterns P are formed on each mask 100, and one mask 100 may be formed with one unit C. One mask unit C can correspond to one display of a smartphone or the like.

為形成較薄的厚度,遮罩100可以電鑄(electroforming)方式形成。或者,遮罩100可以使用藉由軋延(rolling)生成的薄膜(sheet)。遮罩100可以是熱膨脹係數約為1.0×10-6 /℃的恆範鋼(invar)或約為1.0×10-7 /℃的超恆範鋼(super invar)材料。由於這種材料的遮罩100的熱膨脹係數非常低,遮罩的圖案形狀因熱能變形的可能性小,在製造高解析度的OLED中,可以用作FMM(Fine Metal Mask)、陰影遮罩(Shadow Mask)。此外,考慮到最近開發在溫度變化值不大的範圍內實施像素沉積工藝的技術,遮罩100也可以是熱膨脹係數比之略大的鎳(Ni)、鎳-鈷(Ni-Co)等材料。To form a thinner thickness, the mask 100 may be formed by electroforming. Alternatively, the mask 100 may use a sheet produced by rolling. The mask 100 may be an invar material with a thermal expansion coefficient of approximately 1.0×10 -6 /°C or a super invar material with a thermal expansion coefficient of approximately 1.0×10 -7 /°C. Since the thermal expansion coefficient of the mask 100 of this material is very low, the pattern shape of the mask is less likely to be deformed by thermal energy. In the manufacture of high-resolution OLEDs, it can be used as FMM (Fine Metal Mask), shadow mask ( Shadow Mask). In addition, considering the recent development of technology for implementing a pixel deposition process within a range of small temperature changes, the mask 100 may also be made of materials such as nickel (Ni) or nickel-cobalt (Ni-Co) with a slightly larger thermal expansion coefficient. .

若使用軋延薄膜,則具有厚度大於藉由電鑄形成的鍍膜的厚度之問題,但由於熱膨脹係數CTE低,因此具有無需進行額外的熱處理工藝,且耐腐蝕性強之優點。If a rolled film is used, it has the problem that the thickness is greater than that of a coating formed by electroforming. However, due to the low coefficient of thermal expansion CTE, it has the advantage of not requiring additional heat treatment processes and having strong corrosion resistance.

框架200以能够黏合多個遮罩100的形式形成。包括最週邊邊緣在內,框架200可以包括沿著第一方向(例如,橫向)、第二方向(例如,竪向)形成的多個角部。這種多個角部可以在框架200上劃分用於黏合遮罩100的區域。The frame 200 is formed in a form capable of bonding a plurality of masks 100 . Including the most peripheral edge, the frame 200 may include a plurality of corners formed along a first direction (eg, transverse direction) and a second direction (eg, vertical direction). Such multiple corners may demarcate areas on the frame 200 for bonding the mask 100 .

框架200可以包括大概呈四角形狀、方框形狀的邊緣框架部210。邊緣框架部210的內部可以是中空形狀。即,邊緣框架部210可以包括中空區域R。框架200可以由恒範鋼、超恒範鋼、鋁、鈦等金屬材料形成,考慮到熱變形,優選由與遮罩具有相同熱膨脹係數的恒範鋼、超恒範鋼、鎳、鎳-鈷等材料形成,這些材料均可應用於所有作為框架200的構成要素的邊緣框架部210、遮罩單元片材部220。The frame 200 may include an edge frame portion 210 that is generally in a quadrangular shape or a square frame shape. The inside of the edge frame part 210 may have a hollow shape. That is, the edge frame part 210 may include the hollow region R. The frame 200 can be formed of constant steel, super constant steel, aluminum, titanium and other metal materials. Considering thermal deformation, it is preferably made of constant steel, super constant steel, nickel, nickel-cobalt which has the same thermal expansion coefficient as the mask. It is formed of other materials, and these materials can be applied to all edge frame parts 210 and mask unit sheet parts 220 that are components of the frame 200 .

另外,框架200具備多個遮罩單元區域CR,並且可以包括連接到邊緣框架部210的遮罩單元片材部220。遮罩單元片材部220與遮罩100相同,可通過電鑄、軋延形成,或者通過其他的成膜工藝形成。另外,遮罩單元片材部220可以通過鐳射劃線、蝕刻等在平面狀片材(sheet)上形成多個遮罩單元區域CR後,連接到邊緣框架部210。或者,遮罩單元片材部220可以將平面狀的片材連接到邊緣框架部210後,通過鐳射劃線、蝕刻等形成多個遮罩單元區域CR。本說明書中主要對首先在遮罩單元片材部220形成多個遮罩單元區域CR後,連接到邊緣框架部210的情況進行說明。In addition, the frame 200 is provided with a plurality of mask unit areas CR, and may include a mask unit sheet portion 220 connected to the edge frame portion 210 . The mask unit sheet portion 220 is the same as the mask 100 and can be formed by electroforming, rolling, or other film forming processes. In addition, the mask unit sheet portion 220 can be connected to the edge frame portion 210 after forming a plurality of mask unit regions CR on a planar sheet through laser scribing, etching, or the like. Alternatively, the mask unit sheet part 220 may connect a planar sheet to the edge frame part 210 and then form a plurality of mask unit regions CR through laser scribing, etching, or the like. This description will mainly describe a case where a plurality of mask unit regions CR are first formed on the mask unit sheet portion 220 and then connected to the edge frame portion 210 .

遮罩單元片材部220可以包括邊緣片材部221以及第一柵格片材部223、第二柵格片材部225中的至少一個。邊緣片材部221以及第一柵格片材部223、第二柵格片材部225是指在同一片材上劃分的各個部分,它們彼此之間形成為一體。The mask unit sheet part 220 may include an edge sheet part 221 and at least one of the first grid sheet part 223 and the second grid sheet part 225 . The edge sheet portion 221, the first grid sheet portion 223, and the second grid sheet portion 225 are portions divided on the same sheet, and they are formed integrally with each other.

邊緣片材部221可以實質上連接到邊緣框架部210。因此,邊緣片材部221可以具有與邊緣框架部210對應的大致四角形狀、方框形狀。The edge sheet portion 221 may be substantially connected to the edge frame portion 210 . Therefore, the edge sheet portion 221 may have a substantially quadrangular shape or a square frame shape corresponding to the edge frame portion 210 .

另外,第一柵格片材部223可以沿著第一方向(橫向)延伸形成。第一柵格片材部223以直線形態形成,其兩端可以連接到邊緣片材部221。當遮罩單元片材部220包括多個第一柵格片材部223時,各個第一柵格片材部223優選具有相同的間距。In addition, the first grid sheet portion 223 may be formed to extend along the first direction (lateral direction). The first grid sheet part 223 is formed in a straight line shape, and both ends thereof may be connected to the edge sheet part 221 . When the mask unit sheet portion 220 includes a plurality of first grid sheet portions 223, each first grid sheet portion 223 preferably has the same pitch.

另外,進一步地,第二柵格片材部225可以沿著第二方向(竪向)延伸形成,第二栅格片材部225以直線形態形成,其兩端可以連接到邊緣片材部221。第一柵格片材部223和第二柵格片材部225可以彼此垂直交叉。當遮罩單元片材部220包括多個第二柵格片材部225時,各個第二柵格片材部225間優選具有相同的間距。In addition, further, the second grid sheet part 225 may be formed to extend along the second direction (vertical direction). The second grid sheet part 225 may be formed in a straight line, and both ends thereof may be connected to the edge sheet part 221 . The first grid sheet part 223 and the second grid sheet part 225 may perpendicularly cross each other. When the mask unit sheet portion 220 includes a plurality of second grid sheet portions 225, each second grid sheet portion 225 preferably has the same spacing.

另一方面,第一栅格片材部223之間的間距和第二柵格片材部225之間的間距,可以根據遮罩單元C的尺寸而相同或不同。On the other hand, the spacing between the first grid sheet parts 223 and the spacing between the second grid sheet parts 225 may be the same or different according to the size of the mask unit C.

第一柵格片材部223與第二柵格片材部225雖然具有薄膜形態的薄的厚度,但是垂直於長度方向的截面的形狀可以是諸如矩形、平行四邊形的四邊形形狀、三角形形狀等,邊、角的一部分可以形成圓形。截面形狀可以在鐳射劃線、蝕刻等過程中進行調節。Although the first grid sheet part 223 and the second grid sheet part 225 have a thin thickness in the form of a film, the shape of the cross section perpendicular to the longitudinal direction may be a rectangular shape, a parallelogram quadrilateral shape, a triangular shape, etc. Parts of the sides and corners can be rounded. The cross-sectional shape can be adjusted during laser scribing, etching, etc.

邊緣框架部210的厚度可以大於遮罩單元片材部220的厚度。由於邊緣框架部210負責框架200的整體剛性,因此可以以數mm至數cm的厚度形成。The thickness of the edge frame part 210 may be greater than the thickness of the mask unit sheet part 220 . Since the edge frame part 210 is responsible for the overall rigidity of the frame 200, it may be formed with a thickness of several mm to several cm.

就遮罩單元片材部220而言,實際上製造厚片材的工藝困難,若過厚,則有可能在OLED像素沉積工藝中有機物源600(參照圖20)堵塞通過遮罩100的路徑。相反,若過薄,則有可能難以確保足以支撐遮罩100的剛性。由此,遮罩單元片材部220優選比邊緣框架部210的厚度薄,但是比遮罩100更厚。遮罩單元片材部220的厚度可以約為0.1mm至1mm。並且,第一柵格片材部223、第二柵格片材部225的寬度可以約為1~5mm。As for the mask unit sheet part 220, it is actually difficult to manufacture a thick sheet. If it is too thick, the organic source 600 (see FIG. 20) may block the path through the mask 100 during the OLED pixel deposition process. On the contrary, if it is too thin, it may be difficult to ensure sufficient rigidity to support the mask 100 . Therefore, the mask unit sheet portion 220 is preferably thinner than the edge frame portion 210 but thicker than the mask 100 . The thickness of the mask unit sheet portion 220 may be approximately 0.1 mm to 1 mm. In addition, the width of the first grid sheet part 223 and the second grid sheet part 225 may be approximately 1 to 5 mm.

在平面狀片材中,除了邊緣片材部221、第一柵格片材部223、第二柵格片材部225佔據的區域以外,可以提供多個遮罩單元區域CR(CR11~CR56)。從另一個角度來說,遮罩單元區域CR可以是指在邊緣框架部210的中空區域R中,除了邊緣片材部221、第一柵格片材部223、第二柵格片材部225佔據的區域以外的空白區域。In the planar sheet, in addition to the areas occupied by the edge sheet part 221, the first grid sheet part 223, and the second grid sheet part 225, a plurality of mask unit areas CR (CR11~CR56) can be provided . From another perspective, the mask unit area CR may refer to all parts of the hollow area R of the edge frame part 210 except the edge sheet part 221 , the first grid sheet part 223 , and the second grid sheet part 225 The empty space outside the occupied area.

隨著遮罩100的單元C與該遮罩單元區域CR對應,實質上可以用作通過遮罩圖案P沉積OLED的像素的通道。如前所述,一個遮罩單元C與智慧手機等的一個顯示器對應。一個遮罩100中可以形成有用於構成一個單元C的多個遮罩圖案P。或者,一個遮罩100具備多個單元C且各個單元C可以與框架200的各個單元區域CR對應,但是爲了精確地對準遮罩100,需要避免大面積的遮罩100,優選為具備一個單元C的小面積遮罩100。或者,也可以是具有多個單元C的一個遮罩100與遮罩200的一個單元區域CR對應。此時,爲了精確地對準,可以考慮對應具有2-3個單元C的遮罩100。As the cell C of the mask 100 corresponds to the mask cell region CR, it can essentially serve as a channel for depositing the pixels of the OLED through the mask pattern P. As mentioned above, one mask unit C corresponds to one display of a smartphone or the like. A plurality of mask patterns P constituting one unit C may be formed in one mask 100 . Alternatively, one mask 100 may be provided with multiple units C, and each unit C may correspond to each unit area CR of the frame 200. However, in order to accurately align the mask 100, it is necessary to avoid a large area of the mask 100, and it is preferable to have one unit. C's small area mask 100. Alternatively, one mask 100 having a plurality of cells C may correspond to one unit region CR of the mask 200 . At this time, for accurate alignment, a corresponding mask 100 having 2-3 units C may be considered.

遮罩200具備多個遮罩單元區域CR,可以將各個遮罩100以各個遮罩單元C與各個遮罩單元區域CR分別對應的方式黏合。各個遮罩100可以包括形成有多個遮罩圖案P的遮罩單元C與遮罩單元C周邊的虛擬部(相當於除了單元C以外的遮罩膜110部分)。虛擬部可以只包括遮罩膜110,或者可以包括形成有與遮罩圖案P類似形態的規定的虛擬圖案的遮罩膜110。遮罩單元C與框架200的遮罩單元區域CR對應,虛擬部的一部分或者全部可以黏合於框架200(遮罩單元片材部220)。由此,遮罩100和框架200可以形成一體式結構。The mask 200 has a plurality of mask unit areas CR, and each mask 100 can be bonded so that each mask unit C corresponds to each mask unit area CR. Each mask 100 may include a mask unit C in which a plurality of mask patterns P are formed and a dummy portion around the mask unit C (corresponding to the portion of the mask film 110 excluding the unit C). The dummy part may include only the mask film 110, or may include the mask film 110 in which a predetermined dummy pattern having a similar form to the mask pattern P is formed. The mask unit C corresponds to the mask unit area CR of the frame 200, and part or all of the dummy part may be adhered to the frame 200 (mask unit sheet part 220). Thus, the mask 100 and the frame 200 can form an integrated structure.

另一方面,根據另一實施例,框架不是以將遮罩單元片材部220黏合於邊緣框架部210的方式製造,而是可以使用在邊緣框架部210的中空區域R部分直接形成與邊緣框架部210成為一體的柵格框架(相當於柵格片材部223、225)的框架。這種形態的框架也包括至少一個遮罩單元區域CR,可以使遮罩100與遮罩單元區域CR對應,以製造框架一體型遮罩。On the other hand, according to another embodiment, the frame is not manufactured by bonding the mask unit sheet portion 220 to the edge frame portion 210 , but can be directly formed with the edge frame using the hollow region R portion of the edge frame portion 210 The part 210 becomes a frame of an integrated grid frame (corresponding to the grid sheet parts 223 and 225). The frame of this form also includes at least one mask unit region CR, and the mask 100 can be made to correspond to the mask unit region CR to produce a frame-integrated mask.

以下,對框架一體型遮罩的製造過程進行說明。The manufacturing process of the frame-integrated mask is explained below.

首先,可以提供圖4及圖5中所述的框架200。圖6是示出本發明的一實施例涉及的框架200的製造過程的概略圖。First, the frame 200 described in Figures 4 and 5 can be provided. FIG. 6 is a schematic diagram showing the manufacturing process of the frame 200 according to an embodiment of the present invention.

參照圖6的(a),提供邊緣框架部210。邊緣框架部210可以是包括中空區域R的方框形狀。Referring to (a) of FIG. 6 , an edge frame portion 210 is provided. The edge frame part 210 may have a square frame shape including a hollow region R.

其次,參照圖6的(b),製造遮罩單元片材部220。遮罩單元片材部220使用電鑄、軋延或者其他的成膜工藝,製造平面狀的片材後,通過鐳射劃線、蝕刻等去除遮罩單元區域CR部分,從而可以製造。本說明書中,以形成6×5的遮罩單元區域CR(CR11~CR56)為例進行說明。可以存在5個第一柵格片材部223與4個第二柵格片材部225。Next, referring to (b) of FIG. 6 , the mask unit sheet portion 220 is manufactured. The mask unit sheet part 220 can be manufactured by using electroforming, rolling or other film forming processes to produce a planar sheet, and then removing the mask unit region CR part by laser scribing, etching, or the like. In this specification, the formation of a 6×5 mask unit area CR (CR11~CR56) is taken as an example for explanation. There may be five first grid sheet parts 223 and four second grid sheet parts 225 .

然後,可以使遮罩單元片材部220與邊緣框架部210對應。在對應的過程中,可以在拉伸F1~F4遮罩單元片材部220的所有側部以使遮罩單元片材部220平坦伸展的狀態下,使邊緣片材部221與邊緣框架部210對應。在一側部也能以多個點(作為圖6的(b)的例,1~3點)夾持遮罩單元片材部220並進行拉伸。另一方面,也可以不是所有側部,而是沿著一部分側部方向,拉伸F1、F2遮罩單元片材部220。Then, the mask unit sheet portion 220 can be made to correspond to the edge frame portion 210 . In the corresponding process, all sides of the mask unit sheet portion 220 of F1 to F4 can be stretched to make the mask unit sheet portion 220 flat and stretched, so that the edge sheet portion 221 and the edge frame portion 210 correspond. The mask unit sheet portion 220 can also be stretched by sandwiching the mask unit sheet portion 220 at a plurality of points (as an example in FIG. 6(b) , points 1 to 3) on one side. On the other hand, the mask unit sheet portions 220 F1 and F2 may be stretched along some of the side portions instead of all the side portions.

然後,使遮罩單元片材部220與邊緣框架部210對應時,可以將遮罩單元片材部220的邊緣片材部221以焊接W方式黏合。優選地,焊接W所有側部,以便遮罩單元片材部220牢固地黏合於邊緣框架部210。應當最大限度地靠近框架部210的角部側進行焊接W,才能最大限度地減少邊緣框架部210和遮罩單元片材部220之間的翹起空間,並提升黏著性。焊接W部分可以以線(line)或者點(spot)形狀生成,具有與遮罩單元片材部220相同的材料,並可以成為將邊緣框架部210和遮罩單元片材部220連接成一體的媒介。Then, when making the mask unit sheet part 220 correspond to the edge frame part 210, the edge sheet part 221 of the mask unit sheet part 220 can be bonded by welding W. Preferably, all sides of W are welded so that the mask unit sheet part 220 is firmly adhered to the edge frame part 210. The welding W should be performed as close as possible to the corner side of the frame part 210 in order to minimize the warp space between the edge frame part 210 and the mask unit sheet part 220 and improve the adhesion. The welded W part can be generated in a line or spot shape, has the same material as the mask unit sheet portion 220 , and can be integrated to connect the edge frame portion 210 and the mask unit sheet portion 220 medium.

圖7是示出本發明的另一實施例涉及的框架的製造過程的概略圖。圖6的實施例首先製造具備遮罩單元區域CR的遮罩單元片材部220後,黏合於邊緣框架部210,而圖7的實施例將平面狀的片材黏合於邊緣框架部210後形成遮罩單元區域CR部分。7 is a schematic diagram showing a manufacturing process of a frame according to another embodiment of the present invention. In the embodiment of FIG. 6 , the mask unit sheet portion 220 having the mask unit region CR is first manufactured and then bonded to the edge frame portion 210 . In the embodiment of FIG. 7 , a planar sheet is bonded to the edge frame portion 210 to form the mask unit sheet portion 220 . Mask the CR part of the unit area.

首先,與圖6的(a)相同地提供包括中空區域R的邊緣框架部210。First, the edge frame portion 210 including the hollow region R is provided in the same manner as in (a) of FIG. 6 .

然後,參照圖7的(a),可以使平面狀的片材(平面狀的遮罩單元片材部220’)與邊緣框架部210對應。遮罩單元片材部220’是還未形成遮罩單元區域CR的平面狀態。在對應的過程中,可以在拉伸F1~F4遮罩單元片材部220’的所有側部以使遮罩單元片材部220’平坦伸展狀態下,使其與邊緣框架部210對應。在一側部也能以多個點(作為圖7的(a)的例,1~3點)夾持單元片材部220’並進行拉伸。另一方面,也可以不是所有側部,而是沿著一部分側部方向,拉伸F1、F2遮罩單元片材部220’。Then, referring to FIG. 7(a) , a planar sheet (planar mask unit sheet portion 220') can be made to correspond to the edge frame portion 210. The mask unit sheet portion 220' is in a planar state in which the mask unit region CR has not yet been formed. During the corresponding process, all side portions of the F1 to F4 mask unit sheet portions 220' can be stretched to make the mask unit sheet portion 220' in a flat and stretched state to correspond to the edge frame portion 210. The unit sheet portion 220' can also be stretched by sandwiching the unit sheet portion 220' at a plurality of points (as an example in FIG. 7(a), points 1 to 3) on one side. On the other hand, the mask unit sheet portions 220' of F1 and F2 may be stretched along some of the side portions instead of all the side portions.

然後,使遮罩單元片材部220’與邊緣框架部210對應時,可以將遮罩單元片材部220’的邊緣部分以焊接W方式進行黏合。優選地,焊接W所有側部,以便遮罩單元片材部220’牢固地黏合於邊緣框架部220。應當最大限度地靠近邊緣框架部210的角部側進行焊接W,才能最大限度地減少邊緣框架部210和遮罩單元片材部220’之間的翹起空間,並提升黏著性。焊接W部分可以以線(line)或者點(spot)形狀生成,與遮罩單元片材部220’具有相同材料,並可以成為將邊緣框架部210和遮罩單元片材部220’連接成一體的媒介。Then, when the mask unit sheet portion 220' is made to correspond to the edge frame portion 210, the edge portion of the mask unit sheet portion 220' can be bonded by welding W. Preferably, all sides of W are welded so that the mask unit sheet portion 220' is firmly adhered to the edge frame portion 220. The welding W should be performed as close as possible to the corner side of the edge frame part 210 to minimize the warp space between the edge frame part 210 and the mask unit sheet part 220' and improve the adhesion. The welded W part can be generated in the shape of a line or a spot, has the same material as the mask unit sheet part 220', and can connect the edge frame part 210 and the mask unit sheet part 220' into one body. medium.

然後,參照圖7的(b),在平面狀的片材(平面狀的遮罩單元片材部220’)上形成遮罩單元區域CR。通過鐳射劃線、蝕刻等去除遮罩單元區域CR部分的片材,從而可以形成遮罩單元區域CR。本說明書中,以形成6×5的遮罩單元區域CR(CR11~CR56)為例進行說明。當形成遮罩單元區域CR時,與邊緣框架部210焊接W的部分成為邊緣片材部221,並且可形成遮罩單元片材部220,該遮罩單元片材部220具備5個第一柵格片材部223以及4個第二柵格片材部225。Then, referring to FIG. 7(b) , the mask unit region CR is formed on the planar sheet (the planar mask unit sheet portion 220'). The mask unit region CR can be formed by removing the sheet of the mask unit region CR through laser scribing, etching, or the like. In this specification, the formation of a 6×5 mask unit area CR (CR11~CR56) is taken as an example for explanation. When the mask unit region CR is formed, the portion welded W to the edge frame portion 210 becomes the edge sheet portion 221, and the mask unit sheet portion 220 provided with five first grids can be formed. grid sheet part 223 and four second grid sheet parts 225.

圖8是示出現有的用於形成高解析度OLED的遮罩的概略圖。FIG. 8 is a schematic diagram showing a conventional mask used to form a high-resolution OLED.

為實現高解析度的OLED,圖案的尺寸逐漸變小,藉此所使用的遮罩金屬膜的厚度也有必要變薄。如圖8的(a)所示,若要實現高解析度的OLED像素6,則在遮罩10’上縮小像素間距與像素尺寸等(PD->PD')。而且,爲了防止因陰影效應導致的OLED像素6的沉積不均勻,有必要使遮罩10’的圖案傾斜地形成14。然而,具有約30~50㎛的厚度T1,在較厚的遮罩10’上傾斜地形成圖案14的過程中,由於難以進行與細微像素間距PD'與像素尺寸匹配的圖案化13,因此將成為加工工藝中產率變差的原因。換而言之,爲了具有細微的像素間距PD’的同時傾斜地形成圖案14,需要使用較薄厚度的遮罩10’。In order to realize high-resolution OLEDs, the size of patterns is gradually becoming smaller, and therefore the thickness of the mask metal film used must also be thinned. As shown in (a) of Fig. 8, in order to realize high-resolution OLED pixels 6, the pixel pitch and pixel size on the mask 10' are reduced (PD->PD'). Furthermore, in order to prevent uneven deposition of the OLED pixels 6 due to shadow effects, it is necessary to form the pattern 14 of the mask 10' obliquely. However, in the process of forming the pattern 14 obliquely on the thick mask 10' having a thickness T1 of about 30 to 50㎛, it is difficult to perform the patterning 13 matching the fine pixel pitch PD' and the pixel size, so it will become Reasons for poor productivity in processing technology. In other words, in order to form the pattern 14 obliquely while having a fine pixel pitch PD', it is necessary to use a thinner mask 10'.

特別是,爲了實現UHD級別的高解析度,如圖8的(b)所示,只有使用約為20㎛以下的厚度T2的較薄的遮罩10’,才能夠進行細微的圖案化。而且,爲了實現UHD以上的超高解析度,可以考慮使用具有10㎛左右厚度T2的較薄的遮罩10’。In particular, in order to achieve UHD-level high resolution, as shown in FIG. 8(b) , fine patterning can be performed only by using a thin mask 10' with a thickness T2 of approximately 20㎛ or less. Furthermore, in order to achieve ultra-high resolution above UHD, it may be considered to use a thin mask 10' having a thickness T2 of about 10㎛.

圖9是示出本發明的一實施例涉及的以電鑄(electroforming)方式製造遮罩金屬膜100的過程的概略圖。FIG. 9 is a schematic diagram illustrating a process of manufacturing the mask metal film 100 by electroforming according to an embodiment of the present invention.

參照圖9的(a),準備導電性基材21。爲了執行電鑄(electroforming),母板的基材21可以是導電性材料。電鑄時,母板可以作爲陰極(cathode)電極使用。Referring to (a) of FIG. 9 , a conductive base material 21 is prepared. In order to perform electroforming, the base material 21 of the motherboard may be a conductive material. During electroforming, the motherboard can be used as a cathode electrode.

作爲導電性材料,金屬可以在表面上生成金屬氧化物,可以在製造金屬過程中流入有雜質,多晶矽基材可以存在夾雜物或者晶界(Grain Boundary),導電性高分子基材含有雜質的可能性高,並且强度、耐酸性等可能脆弱。將諸如金屬氧化物、雜質、夾雜物、晶界等的妨礙在母板(或者陰極)表面均勻形成電場的要素稱爲”缺陷”(Defect)。由於缺陷(Defect),無法對上述材料的陰極施加均勻的電場,有可能導致不均勻地形成部分鍍膜110(遮罩金屬膜110)。As a conductive material, metal can generate metal oxides on the surface, and impurities can flow into the metal during the manufacturing process. Polycrystalline silicon substrates can have inclusions or grain boundaries, and conductive polymer substrates may contain impurities. High resistance, strength, acid resistance, etc. may be fragile. Factors such as metal oxides, impurities, inclusions, grain boundaries, etc. that prevent the uniform formation of an electric field on the surface of the motherboard (or cathode) are called "defects". Due to defects, a uniform electric field cannot be applied to the cathode of the above-mentioned material, which may result in uneven formation of part of the plating film 110 (mask metal film 110).

在實現UHD級別以上的超高畫質像素中,鍍膜及鍍膜圖案(遮罩圖案P)的不均勻,有可能對形成像素產生不好的影響。例如,目前QHD畫質的情况爲500~600 PPI(pixel per inch),像素尺寸達到約30~50㎛,4K UHD、8K UHD高畫質的情况具有比前者高的~860 PPI、~1600 PPI等的解析度。直接適用於VR機器上的微顯示器或者插入到VR機器而使用的微顯示器以約2000 PPI以上級別的超高畫質爲目標,像素的尺寸約為5~10㎛。適用於其中的FMM、陰影遮罩的圖案寬度可以形成為數μm至數十μm尺寸,優選小於30μm的尺寸,因此數μm尺寸的缺陷也是在遮罩的圖案尺寸中佔據很大比重程度的尺寸。另外,爲了去除上述材料的陰極的缺陷,可以進行用於去除金屬氧化物、雜質等的附加的工藝,該過程中有可能又引發陰極材料被蝕刻等的其他缺陷。In achieving ultra-high image quality pixels above the UHD level, uneven coating and coating patterns (mask patterns P) may have a negative impact on the formation of pixels. For example, the current QHD image quality is 500~600 PPI (pixel per inch), and the pixel size reaches about 30~50㎛. The 4K UHD and 8K UHD high image quality have higher than the former ~860 PPI and ~1600 PPI. etc. resolution. Microdisplays that are directly applicable to VR machines or used when inserted into VR machines aim at ultra-high image quality of about 2000 PPI or above, and the pixel size is about 5~10㎛. The pattern width of the FMM and shadow mask applied thereto can be formed in a size of several μm to tens of μm, preferably less than 30 μm. Therefore, defects of several μm size also occupy a large proportion in the pattern size of the mask. In addition, in order to remove defects in the cathode made of the above-mentioned materials, additional processes for removing metal oxides, impurities, etc. may be performed. This process may cause other defects such as etching of the cathode material.

因此,本發明可以使用單晶材料的母板(或者陰極)。特別是,優選為單晶矽材料。可以對單晶矽材料的母板進行1019 /cm3 以上的高濃度摻雜,以便具有導電性。摻雜可以對整個母板進行,也可以僅對母板的表面部分進行。Therefore, the present invention can use a mother plate (or cathode) of single crystal material. In particular, single crystal silicon material is preferred. The motherboard of single crystal silicon material can be doped at a high concentration of more than 10 19 /cm 3 to make it conductive. Doping can be done on the entire motherboard or only on the surface portion of the motherboard.

另外,單晶材料可使用Ti、Cu、Ag等金屬;GaN、SiC、GaAs、GaP、AlN、InN、InP、Ge等半導體;石墨(graphite)、石墨烯(graphene)等碳材料;包含CH3 NH3 PbCl3 、CH3 NH3 PbBr3 、CH3 NH3 PbI3 、SrTiO3 等之鈣鈦礦(perovskite)結構等超導電體用單晶陶瓷;飛行器零部件用單晶超耐熱合金等。金屬、碳材料基本上是導電性材料。半導體材料的情况,爲了具有導電性,可執行1019 /cm3 以上的高濃度摻雜。其他材料可藉由執行摻雜或形成氧空位(oxygen vacancy)等,藉以形成導電性。摻雜可對母板的整體進行,亦可僅對母板的表面部分進行。In addition, single crystal materials can use metals such as Ti, Cu, and Ag; semiconductors such as GaN, SiC, GaAs, GaP, AlN, InN, InP, and Ge; carbon materials such as graphite and graphene; including CH 3 Single crystal ceramics for superconductors such as NH 3 PbCl 3 , CH 3 NH 3 PbBr 3 , CH 3 NH 3 PbI 3 , SrTiO 3 and other perovskite structures; single crystal super heat-resistant alloys for aircraft parts. Metal and carbon materials are basically conductive materials. In the case of semiconductor materials, in order to achieve conductivity, high concentration doping of 10 19 /cm 3 or more can be performed. Other materials can be conductive by performing doping or forming oxygen vacancy. Doping can be performed on the entire motherboard or only on the surface portion of the motherboard.

單晶材料由於沒有缺陷,電鑄時在表面全部形成均勻的電場,因此生成均勻的金屬膜110。通過均勻的金屬膜而製造的框架一體型遮罩100、200可以進一步改善OLED像素的畫質水準。並且,由於無需進行去除、消除缺陷的附加工藝,可降低工藝費用,並提高生産性。Since the single crystal material has no defects, a uniform electric field is formed on the entire surface during electroforming, thus forming a uniform metal film 110 . The frame-integrated masks 100 and 200 made of uniform metal films can further improve the image quality level of OLED pixels. Furthermore, since there is no need to perform additional processes for removing and eliminating defects, process costs can be reduced and productivity can be improved.

下面假設使用單晶矽晶圓作為導電性基材21的情況進行說明。The following description assumes that a single crystal silicon wafer is used as the conductive base material 21 .

再次參照圖9的(a),然後,將導電性基材21作爲母板[陰極(Cathode Body)]使用,且使陽極(未圖示)相隔開地佈置,藉以可在導電性基材21上通過電鑄形成金屬膜110[或者鍍膜110]。遮罩金屬膜110可形成於導電性基材21的露出的上表面與側面,該導電性基材21與陽極相對佈置且可作用有電場。不僅是導電性基材21的側面,就連導電性基材21的下表面的一部分上也可以形成有金屬膜110。Referring again to FIG. 9(a) , the conductive base material 21 is used as a motherboard (cathode body), and the anodes (not shown) are arranged at intervals, so that the conductive base material 21 can be A metal film 110 [or plating film 110] is formed on the top by electroforming. The mask metal film 110 may be formed on the exposed upper surface and side surfaces of the conductive substrate 21 , which is disposed opposite to the anode and on which an electric field can act. The metal film 110 may be formed not only on the side surfaces of the conductive base material 21 but also on a part of the lower surface of the conductive base material 21 .

然後,用鐳射剪切D遮罩金屬膜110的邊緣部分或在遮罩金屬膜110上部形成光阻層,且僅蝕刻並去除D露出的遮罩金屬膜110的一部分。藉此,如圖9的(b)所示,可以從導電性基材21分離遮罩金屬膜110。Then, use a laser to cut the edge portion of the D mask metal film 110 or form a photoresist layer on top of the mask metal film 110, and only etch and remove the portion of the D mask metal film 110 exposed. Thereby, as shown in FIG. 9( b ), the mask metal film 110 can be separated from the conductive base material 21 .

另外,從導電性基材21分離遮罩金屬膜110之前,可進行熱處理H。本發明的特徵在於,在降低遮罩100的熱膨脹係數的同時為防止遮罩100及遮罩圖案P的熱引起的變形,從導電性基材21[或者母板、陰極]分離遮罩金屬膜110之前進行熱處理H。熱處理可在300℃至800℃的溫度下進行。In addition, before separating the mask metal film 110 from the conductive base material 21, heat treatment H may be performed. A feature of the present invention is to separate the mask metal film from the conductive base material 21 [or motherboard, cathode] in order to reduce the thermal expansion coefficient of the mask 100 and prevent thermal deformation of the mask 100 and the mask pattern P. Heat treatment H before 110. Heat treatment can be carried out at temperatures from 300°C to 800°C.

通常,相比基於軋延生成的恒範鋼薄板,基於電鑄生成的恒範鋼薄板的熱膨脹係數更高。因此,可藉由對恒範鋼薄板進行熱處理降低熱膨脹係數,但該熱處理過程中恒範鋼薄板會産生剝離、變形等。這是因爲,僅對恒範鋼薄板進行熱處理或對僅在導電性基材21的上表面上臨時黏合的恒範鋼薄板進行熱處理而産生的現象。然而,本發明中,不僅在導電性基材21的上表面而且還在側面與下表面的一部分上形成遮罩金屬膜110,因此即使進行熱處理H也不會發生剝離、變形等。換而言之,由於在導電性基材21與遮罩金屬膜110緊密地黏合的狀態下進行熱處理,因此具有能够防止熱處理引起的剝離、變形等且能夠穩定地進行熱處理之優點。In general, the thermal expansion coefficient of constant steel sheets produced by electroforming is higher than that of constant steel sheets produced by rolling. Therefore, the thermal expansion coefficient can be reduced by heat treating the Hengfan steel sheet, but during the heat treatment process, the Hengfan steel sheet will peel, deform, etc. This is a phenomenon caused by heat treatment of only the constant steel thin plate or heat treatment of the constant steel thin plate temporarily bonded only on the upper surface of the conductive base material 21 . However, in the present invention, the mask metal film 110 is formed not only on the upper surface of the conductive base material 21 but also on part of the side surfaces and the lower surface, so even if the heat treatment H is performed, peeling, deformation, etc. will not occur. In other words, since the heat treatment is performed in a state where the conductive base material 21 and the mask metal film 110 are closely adhered, there is an advantage that peeling, deformation, etc. caused by the heat treatment can be prevented and the heat treatment can be performed stably.

圖10是示出本發明的一實施例涉及的以軋延(rolling)方式製造遮罩金屬膜100的過程的概略圖。FIG. 10 is a schematic diagram illustrating a process of manufacturing the mask metal film 100 by rolling according to an embodiment of the present invention.

首先,可以準備遮罩金屬膜110。作爲一實施例,可以軋延方式準備遮罩金屬膜110。First, the mask metal film 110 may be prepared. As an embodiment, the mask metal film 110 can be prepared by rolling.

參照圖10的(a),可以將基於軋延工藝生成的金屬片材作爲遮罩金屬膜110’使用。基於軋延工藝制得的金屬片材在製造工藝上可具有數十至數百㎛的厚度。如前面所述的圖8中,爲了實現UHD級別的高解析度,只有使用厚度爲約20㎛以下的較薄的遮罩金屬膜110,才能够進行細微的圖案化,爲了實現UHD以上的超高解析度,需要使用厚度為約10㎛的較薄的遮罩金屬膜110。然而,由軋延(rolling)工藝生成的遮罩金屬膜110’具有約25~500㎛的厚度,因此有必要使厚度變為更薄。Referring to FIG. 10(a) , a metal sheet generated based on a rolling process can be used as the mask metal film 110'. The metal sheet produced based on the rolling process can have a thickness of tens to hundreds of millimeters in terms of manufacturing process. As mentioned above in Figure 8, in order to achieve high resolution at the UHD level, only a thin mask metal film 110 with a thickness of about 20㎛ or less can be used for fine patterning. In order to achieve ultra-high resolution above UHD, High resolution requires the use of a thinner mask metal film 110 with a thickness of about 10㎛. However, the mask metal film 110' produced by the rolling process has a thickness of about 25 to 500㎛, so it is necessary to make the thickness thinner.

因此,還可以執行使遮罩金屬膜110’的一面平坦化PS的工藝。在此,平坦化PS是指對遮罩金屬膜110’的一面(上面)進行鏡面化的同時去除遮罩金屬膜110’的上部的一部分以使厚度變薄。平坦化PS可藉由CMP(Chemical Mechanical Polishing)方法執行,只要是公知的CMP方法,無需特別限制均可使用。而且,可藉由化學濕蝕刻(chemical wet etching)或者乾蝕刻(dry etching)方法來縮減遮罩金屬膜110’的厚度。除此以外,還可以使用使遮罩金屬膜110’的厚度變薄的可平坦化的其他工藝,對其沒有特別限制。Therefore, a process of planarizing PS on one side of the mask metal film 110' may also be performed. Here, the planarization PS means mirroring one surface (upper surface) of the mask metal film 110' and removing a part of the upper part of the mask metal film 110' to reduce the thickness. Planarization PS can be performed by the CMP (Chemical Mechanical Polishing) method, and any known CMP method can be used without special restrictions. Moreover, the thickness of the mask metal film 110' can be reduced by chemical wet etching or dry etching. In addition to this, other planarization processes that can thin the thickness of the mask metal film 110' may also be used, and are not particularly limited.

在執行平坦化PS的過程中,作爲一列,在CMP過程中,可控制遮罩金屬膜110’的上表面的表面粗糙度Ra。優選地,可進行使表面粗糙度進一步下降的鏡面化。或者,作爲其他例子,基於化學濕蝕刻或者乾蝕刻過程進行平坦化PS之後,可追加進行個別的CMP工藝等的拋光工藝,藉以减少表面粗糙度Ra。In the process of performing planarization PS, as a column, in the CMP process, the surface roughness Ra of the upper surface of the mask metal film 110' can be controlled. Preferably, mirroring can be performed to further reduce the surface roughness. Or, as another example, after planarizing the PS based on a chemical wet etching or dry etching process, a polishing process such as an individual CMP process can be additionally performed to reduce the surface roughness Ra.

如此,可以使遮罩金屬膜110’的厚度減少至約50㎛以下。藉此,遮罩金屬膜110的厚度優選為約2㎛至50㎛,更優選地,厚度可以為約5㎛至20㎛。然而,並非局限於此。In this way, the thickness of the mask metal film 110' can be reduced to approximately 50㎛ or less. Therefore, the thickness of the mask metal film 110 is preferably about 2㎛ to 50㎛, and more preferably, the thickness may be about 5㎛ to 20㎛. However, it is not limited to this.

參照圖10的(b),其與圖10的(a)相同,可藉由减少基於軋延工藝製造的遮罩金屬膜110’的厚度,以製造遮罩金屬膜110。惟,遮罩金屬膜110’是在藉由後面所述的模板50上夾設臨時黏合部55而被黏合的狀態下,執行平坦化PS工藝以縮減厚度。Referring to (b) of FIG. 10 , which is the same as (a) of FIG. 10 , the mask metal film 110 can be manufactured by reducing the thickness of the mask metal film 110' produced based on the rolling process. However, in a state where the mask metal film 110' is bonded by sandwiching the temporary bonding portion 55 on the template 50 described later, a planarization PS process is performed to reduce the thickness.

圖11至圖12是示出本發明的一實施例涉及的將遮罩金屬膜110黏合於模板50上並形成遮罩100以製造遮罩支撑模板的過程的概略圖。11 to 12 are schematic diagrams illustrating a process of bonding the mask metal film 110 to the template 50 and forming the mask 100 to manufacture the mask support template according to an embodiment of the present invention.

參照圖11的(a),可提供模板50(template)。模板50是以使遮罩100附著並支撑於模板50的一面的狀態移動之媒介。模板50的一面優選爲平坦形狀,以支撑平坦的遮罩100並使其移動。中心部50a與遮罩金屬膜110的遮罩單元C對應,邊緣部50b可以與遮罩金屬膜110的虛設部DM對應。模板50可以是尺寸大於遮罩金屬膜110之大平板形狀,以使遮罩金屬膜110整體上得到支撐。Referring to (a) of Figure 11, a template 50 (template) may be provided. The template 50 is a medium that moves in a state where the mask 100 is attached and supported on one side of the template 50 . One side of the template 50 is preferably flat to support and move the flat mask 100 . The center portion 50 a corresponds to the mask unit C of the mask metal film 110 , and the edge portion 50 b may correspond to the dummy portion DM of the mask metal film 110 . The template 50 may be in the shape of a large flat plate with a size larger than that of the mask metal film 110, so that the mask metal film 110 can be supported as a whole.

模板50優選由透明的材料構成,藉以在將遮罩100與框架200對準且黏合的過程以便於觀測視覺(vision)等。而且,若是透明的材料,則還可以使鐳射貫穿。作爲透明的材料,可以使用玻璃(glass)、氧化矽(silica)、耐熱玻璃、石英(quartz)、氧化鋁(Al2 O3 )、硼矽酸玻璃(borosilicate glass)、氧化鋯(zirconia)等材料。作爲一例,模板50可以使用硼矽酸玻璃中具有優秀的耐熱性、化學耐久性、機械强度、透明性等的BOROFLOAT® 33材料。而且,BOROFLOAT® 33的熱膨脹係數約為3.3,與恆範鋼遮罩金屬膜110的熱膨脹係數差异少,具有便於控制遮罩金屬膜110的優點。The template 50 is preferably made of a transparent material to facilitate vision during the process of aligning and bonding the mask 100 with the frame 200 . Moreover, if it is a transparent material, the laser can also penetrate it. As a transparent material, glass, silica, heat-resistant glass, quartz, aluminum oxide (Al 2 O 3 ), borosilicate glass, zirconia, etc. can be used. Material. As an example, the template 50 can use BOROFLOAT ® 33 material among borosilicate glass which has excellent heat resistance, chemical durability, mechanical strength, transparency, etc. Furthermore, the thermal expansion coefficient of BOROFLOAT ® 33 is about 3.3, which is less different from the thermal expansion coefficient of the Hengfan steel mask metal film 110, and has the advantage of easy control of the mask metal film 110.

另外,模板50與遮罩金屬膜110接觸的一面可以是鏡面,以使與遮罩金屬膜110[或者遮罩100]之間的界面之間不産生空隙(air gap)。基於此,模板50的一面的表面粗糙度Ra可以為100nm以下。爲了實現表面粗糙度Ra為100nm以下的模板50,模板50可以使用晶圓(wafer)。晶圓(wafer)的表面粗糙度Ra約為10nm,且市面上的産品較多,表面處理工藝已被習知,故可作爲模板50使用。模板50的表面粗糙度Ra是nm級,因此不存在空隙AG或空隙AG幾乎不存在,容易基於鐳射焊接生成焊接焊珠WB,故對遮罩圖案P的對準誤差不產生影響。In addition, the surface of the template 50 that is in contact with the mask metal film 110 may be a mirror surface so that no air gap is generated at the interface with the mask metal film 110 [or the mask 100 ]. Based on this, the surface roughness Ra of one side of the template 50 may be 100 nm or less. In order to realize the template 50 having a surface roughness Ra of 100 nm or less, a wafer may be used for the template 50 . The surface roughness Ra of the wafer is about 10 nm, and there are many products on the market, and the surface treatment process is well known, so it can be used as the template 50 . The surface roughness Ra of the template 50 is at the nm level, so there is no gap AG or almost no gap AG, and welding beads WB are easily generated by laser welding, so the alignment error of the mask pattern P is not affected.

模板50上可形成有鐳射貫穿孔51,以使從模板50的上部照射的鐳射L到達遮罩100的焊接部(執行焊接的區域)。鐳射貫穿孔51可與焊接部的位置及個數對應地形成於模板50上。焊接部可以規定的間隔在遮罩100的邊緣或虛擬部DM[參照圖12的(e)]的部分上佈置多個,因此鐳射貫穿孔51亦可以與其對應且相隔規定間隔地形成多個。作爲一例,焊接部在遮罩100的兩側(左側/右側)虛擬部DM的部分以規定間隔佈置多個,因此鐳射貫穿孔51亦可以在模板50的兩側(左側/右側)以規定間隔形成多個。A laser through hole 51 may be formed on the template 50 so that the laser L irradiated from an upper portion of the template 50 reaches the welding portion (area where welding is performed) of the mask 100 . The laser through holes 51 can be formed on the template 50 corresponding to the position and number of the welding parts. A plurality of welding portions can be arranged at predetermined intervals on the edge of the mask 100 or the portion of the dummy portion DM [see (e) of FIG. 12 ]. Therefore, a plurality of laser through holes 51 can be formed corresponding to the welding portions at predetermined intervals. As an example, a plurality of welding portions are arranged at predetermined intervals on both sides (left/right) of the mask 100 in the dummy portion DM. Therefore, the laser through holes 51 can also be provided at predetermined intervals on both sides (left/right) of the template 50 Form multiple.

鐳射貫穿孔51並非一定與焊接部的位置及個數對應。例如,亦可以僅對鐳射貫穿孔51中的一部分照射鐳射L以進行焊接。另外,不與焊接部對應的鐳射貫穿孔51中的一部分在對準遮罩100與模板50時亦可代替對準標記而使用。若模板50的材料對鐳射L光透明,則亦可以不形成鐳射貫穿孔51。The laser through holes 51 do not necessarily correspond to the position and number of the welding parts. For example, only a part of the laser through hole 51 may be irradiated with the laser L to perform welding. In addition, a part of the laser through holes 51 that does not correspond to the welding part may be used instead of the alignment mark when aligning the mask 100 and the template 50 . If the material of the template 50 is transparent to the laser L light, the laser through hole 51 does not need to be formed.

模板50的一面上可形成有臨時黏合部55。臨時黏合部55可於模板50的一整個面上形成。遮罩100[遮罩金屬膜110]可於整個臨時黏合部55上黏合。在遮罩100黏合於框架200之前,臨時黏合部55使遮罩100[或者遮罩金屬膜110]臨時黏合於模板50的一面並支撐在模板50上。A temporary adhesive portion 55 may be formed on one side of the template 50 . The temporary bonding portion 55 can be formed on an entire surface of the template 50 . The mask 100 [mask metal film 110] can be bonded on the entire temporary bonding portion 55. Before the mask 100 is bonded to the frame 200 , the temporary bonding portion 55 temporarily bonds the mask 100 [or the mask metal film 110 ] to one side of the template 50 and supports it on the template 50 .

臨時黏合部55可使用基於加熱可分離的黏合劑或者黏合片材,基於照射UV可分離的黏合劑或者黏合片材。The temporary adhesive part 55 may use an adhesive or adhesive sheet that is detachable by heating, or an adhesive or adhesive sheet that is detachable by UV irradiation.

作爲一例,臨時黏合部55可使用液態蠟(liquid wax)。液態蠟可以使用與在半導體晶圓拋光步驟等中使用的蠟相同的蠟,其種類沒有特別限制。液態蠟主要包含作爲用於控制與維持力有關的黏著力、耐衝擊性等的樹脂成份的丙烯酸、醋酸乙烯酯、尼龍及各種聚合物等物質及溶劑。作爲一例,臨時黏合部55作爲樹脂成份可使用丙烯腈-丁二烯橡膠(ABR,Acrylonitrile butadiene rubber)且作為溶劑成份可使用含有n-丙醇的SKYLIQUID ABR-4016。液態蠟可使用旋轉塗布形成於臨時黏合部55上。As an example, liquid wax can be used for the temporary bonding portion 55 . The liquid wax may be the same wax used in the semiconductor wafer polishing step and the like, and the type thereof is not particularly limited. Liquid wax mainly contains substances such as acrylic acid, vinyl acetate, nylon, various polymers and solvents, which are resin components used to control adhesion and impact resistance related to maintenance. As an example, the temporary adhesive portion 55 can use acrylonitrile butadiene rubber (ABR) as a resin component and SKYLIQUID ABR-4016 containing n-propanol as a solvent component. The liquid wax can be formed on the temporary adhesive portion 55 using spin coating.

作爲液態蠟的臨時黏合部55在高於85℃~100℃的溫度下其黏性變低,而在低於85℃的溫度下黏性變大,一部分像固體一樣變硬,且可以使遮罩金屬膜110與模板50固定並黏合。As a liquid wax, the temporary adhesive part 55 becomes less viscous at temperatures higher than 85°C to 100°C, and becomes more viscous at temperatures lower than 85°C, with part of it hardening like a solid, and can make the mask The cover metal film 110 is fixed and bonded to the template 50 .

然後,參照圖11的(b),可以使遮罩金屬膜110’黏合於模板50上。將液態蠟加熱到85℃以上且使遮罩金屬膜110’接觸模板50之後,使遮罩金屬膜110’與模板50通過輥子之間以進行黏合。Then, referring to (b) of FIG. 11 , the mask metal film 110' can be bonded to the template 50. After the liquid wax is heated to above 85°C and the mask metal film 110' contacts the template 50, the mask metal film 110' and the template 50 are passed between rollers for bonding.

根據一實施例,在約120℃的溫度下對模板50烘焙(baking)60秒,使臨時黏合部55的溶劑氣化,並直接進行遮罩金屬膜的層壓(lamination)工藝。層壓可藉由在一面形成有臨時黏合部55的模板50上裝載遮罩金屬膜110’,並將其通過約100℃的上部輥(roll)與約0℃的下部輥之間來執行。其結果,遮罩金屬膜110’可藉由在模板50上夾設臨時黏合部55而接觸。According to one embodiment, the template 50 is baked at a temperature of approximately 120° C. for 60 seconds to vaporize the solvent in the temporary adhesive portion 55 , and a lamination process of the mask metal film is directly performed. Lamination can be performed by loading the mask metal film 110' on the template 50 with the temporary adhesive portion 55 formed on one side, and passing it between an upper roll at about 100°C and a lower roll at about 0°C. As a result, the mask metal film 110' can be brought into contact by sandwiching the temporary adhesive portion 55 on the template 50.

圖13是示出本發明的一實施例涉及的臨時黏合部55的放大截面的概略圖。作爲又一例,臨時黏合部55可使用熱分離膠帶(thermal release tape)。熱分離膠帶是中間佈置有PET膜等的基膜56,基膜56的兩面佈置有可熱分離的黏著層57a、57b(thermal release adhesive),而黏著層57a、57b的外廓可佈置有分離膜/離型膜58a、58b。其中,基膜56的兩面上佈置的黏著層57a、57b的分離溫度可相互不同。FIG. 13 is a schematic diagram showing an enlarged cross-section of the temporary bonding portion 55 according to an embodiment of the present invention. As another example, thermal release tape may be used for the temporary bonding portion 55 . The thermal release tape is a base film 56 with a PET film or the like arranged in the middle. The base film 56 is provided with heat-separable adhesive layers 57a and 57b (thermal release adhesive) on both sides, and the outer contours of the adhesive layers 57a and 57b are arranged with release adhesives. Film/release film 58a, 58b. Among them, the separation temperatures of the adhesive layers 57a and 57b arranged on both sides of the base film 56 may be different from each other.

根據一實施例,在去除分離膜/離型膜58a、58b的狀態下,熱分離膠帶的下表面[第二黏著層57b]黏合於模板50上,熱分離膠帶的上表面[第一黏著層57a]可黏合於遮罩金屬膜110’上。第一黏著層57a與第二黏著層57b的分離溫度互不相同,因此在後面所述的圖18中,從遮罩100分離模板50時,隨著對第一黏著層57a加熱,遮罩100可從模板50及臨時黏合部55分離出來。According to an embodiment, in the state of removing the separation film/release film 58a, 58b, the lower surface of the thermal release tape [the second adhesive layer 57b] is adhered to the template 50, and the upper surface of the thermal release tape [the first adhesive layer] 57a] can be bonded to the mask metal film 110'. The separation temperatures of the first adhesive layer 57a and the second adhesive layer 57b are different from each other. Therefore, when the template 50 is separated from the mask 100 in FIG. 18 described later, as the first adhesive layer 57a is heated, the mask 100 It can be separated from the template 50 and the temporary bonding part 55 .

接著,進一步參照圖11的(b),可以使遮罩金屬膜110’的一面平坦化PS。如上所述,圖10中由軋延工藝制得之遮罩金屬膜110’可藉由平坦化PS工藝縮減其厚度(110'->110)。而且,由電鑄工藝制得之遮罩金屬膜110也可以進行平坦化PS工藝,藉以控制其表面特性、厚度。Next, referring further to FIG. 11(b), one side of the mask metal film 110' can be planarized PS. As mentioned above, the thickness of the mask metal film 110' produced by the rolling process in Figure 10 can be reduced by the planarization PS process (110'->110). Moreover, the mask metal film 110 produced by the electroforming process can also be subjected to a planarization PS process to control its surface characteristics and thickness.

藉此,如圖11的(c)所示,隨著遮罩金屬膜110’的厚度縮減(110'->110),遮罩金屬膜110的厚度變為約5㎛至20㎛。Thereby, as shown in FIG. 11(c) , as the thickness of the mask metal film 110' decreases (110'->110), the thickness of the mask metal film 110 becomes about 5㎛ to 20㎛.

另外,遮罩金屬膜110以電鑄方式生成時,可省略圖11的(b)的平坦化PS步驟,而可以直接進行在模板50黏合遮罩金屬膜110的過程並形成圖11的(c)的形態。In addition, when the mask metal film 110 is formed by electroforming, the planarization PS step of FIG. 11(b) can be omitted, and the process of bonding the mask metal film 110 to the template 50 can be directly performed to form the process of FIG. 11(c ) form.

然後,參照圖12的(d),可以在遮罩金屬膜110上形成圖案化的絕緣部25。絕緣部25可利用印刷法等由光阻材料形成。Then, referring to (d) of FIG. 12 , the patterned insulating portion 25 may be formed on the mask metal film 110 . The insulating portion 25 can be formed of a photoresist material using a printing method or the like.

接著,可進行遮罩金屬膜110的蝕刻。可使用幹蝕刻、濕蝕刻等方法,對該方法沒有特別限制,蝕刻結果,在絕緣部25之間的空位置26上露出的遮罩金屬膜110部分被蝕刻。遮罩金屬膜110的被蝕刻部分構成遮罩圖案P,藉以可製造形成有多個遮罩圖案P的遮罩100。Next, the mask metal film 110 may be etched. Dry etching, wet etching, or other methods may be used, and the method is not particularly limited. As a result of the etching, the portion of the mask metal film 110 exposed in the vacant positions 26 between the insulating portions 25 is etched. The etched portion of the mask metal film 110 forms the mask pattern P, whereby the mask 100 formed with a plurality of mask patterns P can be manufactured.

然後,參照圖12的(e),藉由去除絕緣部25,可完成支撐遮罩100的模板50的製造。遮罩100可包括形成有多個遮罩圖案P的遮罩單元C及遮罩單元C周邊之虛設部DM。虛設部DM對應於除了單元C以外的遮罩膜110[遮罩金屬膜110]部分,可以只包括遮罩膜110或可包括形成有與遮罩圖案P相似形態的預定的虛設部圖案的遮罩膜110。虛設部DM與遮罩100的邊緣對應,因此虛設部DM的一部分或者全部可黏合於框架200[遮罩單元片材部220]上。Then, referring to (e) of FIG. 12 , by removing the insulating portion 25 , the manufacturing of the template 50 supporting the mask 100 can be completed. The mask 100 may include a mask unit C formed with a plurality of mask patterns P and a dummy portion DM around the mask unit C. The dummy portion DM corresponds to the portion of the mask film 110 [mask metal film 110] other than the cell C, and may include only the mask film 110 or may include a mask in which a predetermined dummy portion pattern similar to the mask pattern P is formed. Cover film 110. The dummy part DM corresponds to the edge of the mask 100, so part or all of the dummy part DM can be adhered to the frame 200 [mask unit sheet part 220].

遮罩圖案P的寬度可以小於40μm,遮罩100的厚度可以約為2~50μm。The width of the mask pattern P may be less than 40 μm, and the thickness of the mask 100 may be about 2~50 μm.

由於框架200具備多個遮罩單元區域CR(CR11~CR56),因此也可以形成多個具有與各個遮罩單元區域CR(CR11~CR56)分別對應的遮罩單元C(C11~56)的遮罩100。而且,可具備分別支撐多個遮罩100的多個模板50。Since the frame 200 has multiple mask unit areas CR (CR11~CR56), multiple mask units C (C11~56) corresponding to each mask unit area CR (CR11~CR56) can also be formed. Cover 100. Furthermore, a plurality of templates 50 each supporting a plurality of masks 100 may be provided.

圖14是示出本發明的一實施例涉及的將遮罩支撑模板裝載於框架上的過程的概略圖。FIG. 14 is a schematic diagram illustrating a process of loading the mask support template on the frame according to an embodiment of the present invention.

參照圖14,可藉由真空吸盤90移送模板50。用真空吸盤90吸附黏合有遮罩100的模板50的面的相反面並進行移送。真空吸盤90可以與向x、y、z、θ軸移動的移動手段(未圖示)連接。而且,真空吸盤90可吸附模板50並與能够進行翻轉(flip)的翻轉手段(未圖示)連接。如圖14的(b)所示,真空吸盤90即使在吸附模板50並使其翻轉之後向框架200移送的過程中,也不會影響遮罩100的黏合狀態與對準狀態。Referring to FIG. 14 , the template 50 can be transferred by a vacuum suction cup 90 . The surface opposite to the surface of the template 50 to which the mask 100 is bonded is sucked by the vacuum suction cup 90 and transferred. The vacuum suction cup 90 may be connected to moving means (not shown) that move in the x, y, z, and θ axes. Furthermore, the vacuum suction cup 90 can adsorb the template 50 and is connected to a flipping means (not shown) capable of flipping. As shown in (b) of FIG. 14 , the vacuum suction cup 90 does not affect the bonding state and alignment state of the mask 100 even when the template 50 is adsorbed and turned over and then transferred to the frame 200 .

圖15是示出本發明一實施例涉及的將模板裝載於框架上以使遮罩與框架的單元區域對應的狀態的概略圖。圖16是示出本發明的一實施例涉及的藉由吸附孔229向遮罩施加吸附力VS的狀態的概略圖。圖17是示出本發明的一實施例涉及的形成有多個吸附孔229的框架200的部分概略圖。圖15雖示出將一個遮罩100與單元區域CR對應/黏合的例子,但也可以進行將多個遮罩100同時與所有單元區域CR分別對應,以使遮罩100黏合於框架200上的過程。此時,可具有用於分別支撐多個遮罩100的多個模板50。此外,圖16雖示出第一柵格片材部223上形成吸附孔229藉以施加吸附力VS的形態,但是,當然也可以是邊緣片材部221上形成吸附孔229,並在邊緣片材部221與邊緣框架部210之間形成預定的段差,藉以向邊緣片材部221的吸附孔229施加吸附力VS。15 is a schematic diagram illustrating a state in which a template is mounted on a frame so that a mask corresponds to a unit area of the frame according to an embodiment of the present invention. FIG. 16 is a schematic diagram illustrating a state in which the adsorption force VS is applied to the mask through the adsorption holes 229 according to an embodiment of the present invention. FIG. 17 is a partial schematic diagram showing a frame 200 in which a plurality of adsorption holes 229 are formed according to an embodiment of the present invention. Although FIG. 15 shows an example in which one mask 100 is associated with/glued to the unit area CR, multiple masks 100 may also be associated with all unit areas CR at the same time so that the masks 100 are adhered to the frame 200 . Process. At this time, there may be a plurality of templates 50 for supporting a plurality of masks 100 respectively. In addition, although FIG. 16 shows the form in which the adsorption holes 229 are formed on the first grid sheet part 223 to apply the adsorption force VS, it is of course also possible to form the adsorption holes 229 on the edge sheet part 221 and on the edge sheet. A predetermined step is formed between the edge portion 221 and the edge frame portion 210 , thereby applying an adsorption force VS to the adsorption holes 229 of the edge sheet portion 221 .

然後,參照圖15,可以使遮罩100與框架200的一個遮罩單元區域CR對應。可藉由將模板50裝載於框架200[或者遮罩單元片材部220]上,實現遮罩100與遮罩單元區域CR的對應。控制模板50/真空吸盤90的位置的同時通過顯微鏡觀察遮罩100是否與遮罩單元區域CR對應。由於模板50擠壓遮罩100,因此遮罩100與框架200可緊密地抵接。Then, referring to FIG. 15 , the mask 100 can be made to correspond to one mask unit area CR of the frame 200 . Correspondence between the mask 100 and the mask unit area CR can be achieved by loading the template 50 on the frame 200 [or the mask unit sheet part 220]. While controlling the position of the template 50/vacuum suction cup 90, observe through a microscope whether the mask 100 corresponds to the mask unit area CR. Since the template 50 presses the mask 100, the mask 100 and the frame 200 can be tightly abutted.

另外,本發明的特徵在於,遮罩100與框架200的界面之間不產生空隙,為了使它們更加緊密地接觸,除了模板50的荷重以外還利用吸附力VS。作為施加吸附力VS或者吸壓的路徑,框架200上可形成有多個吸附孔229。In addition, the present invention is characterized in that no gap is generated between the interface of the mask 100 and the frame 200, and in order to bring them into closer contact, the adsorption force VS is used in addition to the load of the template 50. As a path for applying adsorption force VS or suction pressure, a plurality of adsorption holes 229 may be formed on the frame 200 .

參照圖15至圖17,多個吸附孔229可形成於具有遮罩單元區域CR的框架200之角部附近。具體而言,與遮罩單元片材部220的角部相隔預定距離之部分可形成多個吸附孔229,更具體而言,可形成於與邊緣片材部221的內側角部相隔預定距離之部分以及第一、第二柵格片材部223、225的角部相隔預定距離之部分上。Referring to FIGS. 15 to 17 , a plurality of adsorption holes 229 may be formed near the corners of the frame 200 having the mask unit region CR. Specifically, a plurality of adsorption holes 229 may be formed at a predetermined distance from the corners of the mask unit sheet part 220 , and more specifically, may be formed at a predetermined distance from the inner corners of the edge sheet part 221 . part and the corners of the first and second grid sheet parts 223 and 225 that are separated by a predetermined distance.

多個吸附孔229的形態、尺寸等只要在能夠作用真空吸壓的範圍內,對其沒有特別限制。惟,多個吸附孔229的位置最好不與遮罩100的焊接部(待焊接區域)重疊。若焊接部與吸附孔229重疊,則遮罩100與框架200[或者遮罩單元片材部220]將不能緊密地接觸,故不能順利地生成藉由鐳射焊接的焊接焊珠WB。優選地,多個吸附孔229形成於與焊接部靠近的部分,藉以使遮罩100的焊接部部分與框架200[或者遮罩單元片材部220]更加密接。The shape and size of the plurality of adsorption holes 229 are not particularly limited as long as they are within a range in which vacuum suction pressure can be applied. However, it is preferable that the positions of the plurality of adsorption holes 229 do not overlap with the welding portion (area to be welded) of the mask 100 . If the welding part overlaps with the adsorption hole 229, the mask 100 and the frame 200 [or the mask unit sheet part 220] will not be in close contact, so the welding beads WB by laser welding cannot be generated smoothly. Preferably, a plurality of adsorption holes 229 are formed in a portion close to the welding portion, so that the welding portion portion of the mask 100 is more closely connected to the frame 200 [or the mask unit sheet portion 220].

如圖16所示,若將模板50裝載於框架200[或者遮罩單元片材部220]上,則遮罩100的下部表面的一部分與框架200[或者遮罩單元片材部220]的上部抵接。框架200[或者遮罩單元片材部220]上形成的吸附孔229的上部與遮罩100的下部表面對應,且與吸附孔229的下部對應的吸附力(吸壓)施加手段藉由吸附孔229把吸附力VS[或者吸壓VS]施加到遮罩100上,藉以拉拽與吸附孔229對應的遮罩100部分。藉此,遮罩100將與框架200更加密接,故進行鐳射焊接時,能夠使焊接焊珠WB更加穩定地生成。As shown in FIG. 16 , when the template 50 is mounted on the frame 200 [or the mask unit sheet part 220 ], a part of the lower surface of the mask 100 is in contact with the upper part of the frame 200 [or the mask unit sheet part 220 ]. Abut. The upper part of the adsorption hole 229 formed in the frame 200 [or the mask unit sheet part 220] corresponds to the lower surface of the mask 100, and the adsorption force (suction pressure) applying means corresponding to the lower part of the adsorption hole 229 passes through the adsorption hole. 229 applies the adsorption force VS [or suction pressure VS] to the mask 100 to pull the portion of the mask 100 corresponding to the adsorption hole 229 . Thereby, the mask 100 will be more closely connected with the frame 200, so when laser welding is performed, the welding beads WB can be generated more stably.

吸附力(吸壓)施加手段可使用在吸附孔229進行真空吸附之公知的裝置。惟,以下實施例中對包含有吸附部75的下部支撐體70進行說明。As the adsorption force (suction pressure) applying means, a known device that performs vacuum adsorption on the adsorption holes 229 can be used. However, in the following embodiment, the lower support 70 including the adsorption part 75 will be described.

參照圖15及圖16,亦可以在框架200下部佈置下部支撑體70。下部支撐體70可佈置於作為執行遮罩100與框架200之黏合工藝的載置台的台部(未圖示)上面,且支撐框架200的下部。下部支撐體70可佈置於框架200的下部,使遮罩100黏合於框架200上的工藝進行期間,為固定連接於框架200上,下部支撐體70可佈置於框架200的下部。下部支撐體70可具有板狀,藉以支撐框架200,其尺寸可以小於或等於框架200的面積。或者,下部支撐體70可具有能夠進入框架邊緣部210的中空區域R內部的尺寸且具有平板形狀。考慮到熱膨脹係數,下部支撐體70優選使用與框架200相同的材料,但亦可以使用剛性高的材料。而且,下部支撑體70的上面亦可形成有與遮罩單元片材部220的形狀對應的規定支撐槽(未圖示)。此時,邊緣片材部221、第一柵格片材部223及第二柵格片材部225插入支撐槽內,藉以使遮罩單元片材部220更好地固定。Referring to FIGS. 15 and 16 , the lower support body 70 may also be arranged under the frame 200 . The lower support body 70 may be disposed on a table (not shown) serving as a mounting platform for performing the bonding process of the mask 100 and the frame 200 , and support the lower part of the frame 200 . The lower support body 70 may be arranged at the lower part of the frame 200 . During the process of bonding the mask 100 to the frame 200 , in order to be fixedly connected to the frame 200 , the lower support body 70 may be arranged at the lower part of the frame 200 . The lower supporting body 70 may have a plate shape to support the frame 200 , and its size may be smaller than or equal to the area of the frame 200 . Alternatively, the lower support body 70 may have a size that can enter the inside of the hollow region R of the frame edge portion 210 and may have a flat plate shape. Taking the thermal expansion coefficient into consideration, the lower support body 70 is preferably made of the same material as the frame 200 , but a material with high rigidity may also be used. Furthermore, a predetermined support groove (not shown) corresponding to the shape of the mask unit sheet portion 220 may be formed on the upper surface of the lower support body 70 . At this time, the edge sheet part 221, the first grid sheet part 223 and the second grid sheet part 225 are inserted into the support groove, so that the mask unit sheet part 220 is better fixed.

下部支撐體70的上部可形成有吸附部75。吸附部75優選地佈置為與框架200[或者遮罩單元片材部220]上形成的吸附孔229的位置對應。換而言之,吸附部75可佈置於在下部支撐體70上向吸附孔229集中地施加吸附力VS[或者吸壓VS]的位置上。吸附部75可使用公知的可真空吸附裝置,且可以與外部的吸壓發生裝置連接。作為一例,下部支撐體70的內部形成有真空通道76,且另一端與泵等的外部吸壓發生裝置(未圖示)連接,而一端與吸附部75連接。與真空通道76連接的吸附部75的上部表面形成有多個孔、槽等,可作為施加吸壓的通道使用。外部的吸壓發生裝置與下部支撐體70的多個真空通道76連接,藉以可分別控制對各真空通道76的吸壓,而且還可以同時控制對所有真空通道76的吸壓。An adsorption part 75 may be formed on the upper part of the lower support body 70 . The adsorption part 75 is preferably arranged to correspond to the position of the adsorption hole 229 formed on the frame 200 [or the mask unit sheet part 220]. In other words, the adsorption part 75 may be arranged at a position on the lower support 70 where the adsorption force VS [or suction pressure VS] is concentratedly applied to the adsorption holes 229 . The suction part 75 can use a known vacuum suction device, and can be connected to an external suction pressure generating device. As an example, a vacuum passage 76 is formed inside the lower support body 70 , the other end is connected to an external suction pressure generating device (not shown) such as a pump, and the one end is connected to the adsorption part 75 . The upper surface of the adsorption part 75 connected to the vacuum channel 76 is formed with a plurality of holes, grooves, etc., and can be used as a channel for applying suction pressure. The external suction pressure generating device is connected to the plurality of vacuum channels 76 of the lower support body 70, whereby the suction pressure of each vacuum channel 76 can be controlled separately, and the suction pressure of all vacuum channels 76 can also be controlled simultaneously.

下部支撑體70可擠壓與遮罩100接觸的遮罩單元區域CR的相反面。即,下部支撑體70沿上部方向支撑遮罩單元片材部220,藉以防止遮罩100的黏合過程中遮罩單元片材部220向下部下垂。與此同時,下部支撑體70與模板50以相互相反的方向擠壓遮罩100的邊緣及框架200[或者遮罩單元片材部220],故不會破壞遮罩100的對準狀態並使其保持對準。The lower support body 70 may press the opposite surface of the mask unit region CR in contact with the mask 100 . That is, the lower support body 70 supports the mask unit sheet portion 220 in the upper direction, thereby preventing the mask unit sheet portion 220 from sagging downward during the bonding process of the mask 100 . At the same time, the lower support 70 and the template 50 press the edges of the mask 100 and the frame 200 [or the mask unit sheet part 220] in opposite directions, so the alignment of the mask 100 will not be destroyed and the It remains aligned.

進一步而言,從下部支撐體70的吸附部75提供吸附力VS[或者吸壓VS],隨著該吸附力VS經吸附孔229施加到遮罩100上,遮罩100將被拉拽到吸附部75側(下部側)。這樣一來,遮罩100與框架200[或遮罩單元片材部220]的界面會緊密地抵接。Furthermore, the adsorption force VS [or suction pressure VS] is provided from the adsorption part 75 of the lower support 70 , and as the adsorption force VS is applied to the mask 100 through the adsorption hole 229 , the mask 100 will be pulled to the adsorption position. Part 75 side (lower side). In this way, the interface between the mask 100 and the frame 200 [or the mask unit sheet part 220] will be in close contact.

由於吸附部75強烈的拉拽遮罩100,因而遮罩100與框架200的界面之間不存在細微的空隙。其結果,由於遮罩100與框架200[在圖16的放大圖中,第一柵格片材部223]密接,因而即使在焊接部的任何位置照射镭射L,遮罩100與框架200之间也會容易生成焊接焊珠WB。焊接焊珠WB使遮罩100與框架200連接成一體,結果具有使焊接穩定地進行之優點。Since the suction part 75 strongly pulls the mask 100, there is no slight gap between the interface of the mask 100 and the frame 200. As a result, since the mask 100 and the frame 200 [in the enlarged view of FIG. 16 , the first grid sheet portion 223] are in close contact, even if the laser L is irradiated at any position of the welding portion, the gap between the mask 100 and the frame 200 It is also easy to generate welding beads WB. The welding beads WB connect the mask 100 and the frame 200 into one body, and as a result, there is an advantage that the welding can be performed stably.

另外,由於僅藉由模板50上附著遮罩100且將模板50裝載於框架200上就可以完成使遮罩100與框架200的遮罩單元區域CR對應的過程,因而此過程對遮罩100可以不施加任何拉伸力。In addition, since the process of making the mask 100 correspond to the mask unit area CR of the frame 200 can be completed only by attaching the mask 100 to the template 50 and loading the template 50 on the frame 200, this process can be applied to the mask 100. No stretching force is applied.

施加吸附部75的吸附力VS之後,接著向遮罩100照射鐳射L,以使遮罩100藉由鐳射焊接黏合於框架200。被鐳射焊接的遮罩的焊接部部分生成焊接焊珠WB,焊接焊珠WB可具有與遮罩100/框架200相同的材料且與遮罩100/框架200連接成一體。After the adsorption force VS of the adsorption part 75 is applied, the laser L is irradiated onto the mask 100 so that the mask 100 is bonded to the frame 200 through laser welding. The welding portion of the laser welded mask generates welding beads WB, which may have the same material as the mask 100/frame 200 and be integrated with the mask 100/frame 200.

圖18是示出本發明的一實施例涉及的將遮罩100黏合於框架200上之後分離遮罩100與模板50的過程的概略圖。FIG. 18 is a schematic diagram illustrating the process of separating the mask 100 and the template 50 after the mask 100 is bonded to the frame 200 according to an embodiment of the present invention.

參照圖18,在使遮罩100黏合於框架200之後,可分離(debonding)遮罩100與模板50。遮罩100與模板50之間的分離可藉由對臨時黏合部55進行加熱ET、化學處理CM、施加超聲波US、施加UV中的至少一個來實現。由於遮罩100保持與框架200黏合的狀態,因此可以只抬起模板50。作為一例,若施加比85℃~100℃高的熱ET,則臨時黏合部55的黏性下降,且遮罩100與模板50的黏著力邊弱,故可以分離遮罩100與模板50。作爲其他例子,將臨時黏合部55浸漬CM於IPA、丙酮、乙醇等化學物質中,藉以由溶解、去除臨時黏合部55等方式分離遮罩100與模板50。作爲又一例,若施加超聲波US或施加UVUV,則遮罩100與模板50間的黏著力變弱,故可使遮罩100與模板50分離。Referring to FIG. 18 , after the mask 100 is bonded to the frame 200 , the mask 100 and the template 50 can be debonded. The separation between the mask 100 and the template 50 can be achieved by at least one of heating ET, chemical treatment CM, applying ultrasonic waves US, and applying UV to the temporary bonding portion 55 . Since the mask 100 remains adhered to the frame 200, only the template 50 can be lifted. As an example, if a thermal ET higher than 85° C. to 100° C. is applied, the viscosity of the temporary adhesive portion 55 decreases, and the adhesive force between the mask 100 and the template 50 becomes weaker, so the mask 100 and the template 50 can be separated. As another example, the temporary adhesive portion 55 is immersed in CM in chemical substances such as IPA, acetone, ethanol, etc., so as to separate the mask 100 and the template 50 by dissolving and removing the temporary adhesive portion 55 . As another example, if ultrasonic waves US or UVUV are applied, the adhesive force between the mask 100 and the template 50 becomes weak, so the mask 100 and the template 50 can be separated.

進一步而言,由於使遮罩100與模板50黏合的臨時黏合部55是TBDB黏合材料(temporary bonding & debonding adhesive),故可以使用各種分離(debonding)方法。Furthermore, since the temporary bonding portion 55 that bonds the mask 100 and the template 50 is a TBDB adhesive material (temporary bonding & debonding adhesive), various debonding methods can be used.

作為一例,可使用基於化學處理CM的溶劑剝離(Solvent Debonding)方法。藉由溶劑(solvent)的滲透導致臨時黏合部55溶解以實現剝離。此時,由於遮罩100上形成有圖案P,因此溶劑將通過遮罩圖案P及遮罩100與模板50間的界面進行滲透。溶劑剝離可在常溫(room temperature)下進行且無需其他的複雜剝離設備,故相比於其他剝離方法具有經濟性。As an example, a solvent debonding method based on chemically treated CM can be used. The temporary adhesive portion 55 is dissolved by penetration of a solvent to achieve peeling. At this time, since the pattern P is formed on the mask 100 , the solvent will penetrate through the mask pattern P and the interface between the mask 100 and the template 50 . Solvent stripping can be performed at room temperature and does not require other complex stripping equipment, so it is more economical than other stripping methods.

作為又一例,可使用基於加熱ET的熱剝離(Heat Debonding)方法。用高溫的熱誘導臨時黏合部55的分解,若遮罩100與模板50間的黏著力變小,可向上下方向或者左右方向進行剝離。As another example, a heat debonding method based on heating ET can be used. High-temperature heat induces decomposition of the temporary adhesive portion 55, and if the adhesive force between the mask 100 and the template 50 becomes smaller, the mask 100 and the template 50 can be peeled off in the vertical or left-right direction.

作為又一例,可使用基於加熱ET、施加UVUV等的剝離黏合劑之剝離(Peelable Adhesive Debonding)方法。若臨時黏合部55是熱分離膠帶,則可藉由剝離黏合劑之剝離方法進行剝離,該方法與熱剝離方法相同,無需高溫的熱處理及昂貴的熱處理設備且工藝相對簡單。As another example, a Peelable Adhesive Debonding method based on heating ET, applying UVUV, or the like can be used. If the temporary adhesive part 55 is a thermal release tape, it can be peeled off by a peeling method of peeling off the adhesive. This method is the same as the thermal peeling method, and does not require high-temperature heat treatment and expensive heat treatment equipment, and the process is relatively simple.

作為又一例,可以使用基於化學處理CM、施加超聲波US、施加UVUV等的常溫剝離(Room Temperature Debonding)方法。若對遮罩100或者模板50的一部分(中心部)進行non-sticky處理,則只有邊緣部分藉由臨時黏合部55被黏合。另外,剝離時邊緣部分上有溶劑滲透,因此可藉由臨時黏合部55的溶解實現剝離。該方法具有以下優點:在進行黏合與剝離的過程中,除了遮罩100、模板50的邊緣區域以外的剩餘部分不會發生直接損傷或者剝離時由於黏合材料殘渣(residue)引起的缺陷等。而且,該方法與熱剝離方法不同,由於剝離時無需進行高溫的熱處理過程,故具有能够相對地减少工藝費用的優點。As another example, a room temperature debonding method based on chemical treatment CM, application of ultrasonic waves US, application of UVUV, etc. can be used. If a part (center part) of the mask 100 or the template 50 is non-sticky, only the edge part is adhered by the temporary adhesive part 55 . In addition, since solvent penetrates into the edge portion during peeling, peeling can be achieved by dissolving the temporary adhesive portion 55 . This method has the following advantages: during the bonding and peeling process, the remaining parts except the edge areas of the mask 100 and the template 50 will not be directly damaged or defects caused by adhesive material residue during peeling will not occur. Moreover, this method is different from the thermal stripping method in that it does not require a high-temperature heat treatment process during stripping, so it has the advantage of relatively reducing process costs.

圖19是示出本發明的一實施例涉及的將遮罩100黏合於框架200上的狀態的概略圖。FIG. 19 is a schematic diagram showing a state in which the mask 100 is adhered to the frame 200 according to an embodiment of the present invention.

參照圖19,一個遮罩100可黏合於框架200的一個單元區域CR上。Referring to FIG. 19 , a mask 100 may be bonded to a unit area CR of the frame 200 .

由於框架200的遮罩單元片材部220具有薄的厚度,在對遮罩100施加拉伸力的狀態下,黏合於遮罩單元片材部220時,遮罩100中殘存的拉伸力作用於遮罩單元片材部220以及遮罩單元區域CR,也有可能使它們變形。因此,應該在對遮罩100不施加拉伸力的狀態下,將遮罩100黏合於遮罩單元片材部220。本發明僅藉由在模板50上附著遮罩100且將模板50裝載於框架200上就可以完成使遮罩100與框架200的遮罩單元區域CR對應的過程,此過程對遮罩100不施加任何拉伸力。由此,可以防止因施加到遮罩100的拉伸力作為張力(tension)反向作用於框架200而導致框架200(或者遮罩單元片材部220)變形。Since the mask unit sheet portion 220 of the frame 200 has a thin thickness, when the mask 100 is adhered to the mask unit sheet portion 220 with a tensile force applied, the tensile force remaining in the mask 100 acts. The mask unit sheet portion 220 and the mask unit region CR may be deformed. Therefore, the mask 100 should be adhered to the mask unit sheet portion 220 without applying tensile force to the mask 100 . The present invention can complete the process of making the mask 100 correspond to the mask unit area CR of the frame 200 by only attaching the mask 100 to the template 50 and loading the template 50 on the frame 200. This process does not impose any force on the mask 100. Any stretching force. This can prevent the frame 200 (or the mask unit sheet portion 220 ) from deforming due to the tensile force applied to the mask 100 acting in reverse on the frame 200 as tension.

現有的圖1的遮罩10包括6個單元C1~C6,因此具有較長的長度,而本發明的遮罩100包括一個單元C,因此具有較短的長度,因此PPA(pixel position accuracy)扭曲的程度會變小。假設包括多個單元C1~C6、…的遮罩10的長度為1m,並且在1m的總長度中發生10μm的PPA誤差,則本發明的遮罩100可以隨著相對長度減小(相當於單元C數量減少)而使上述誤差範圍1/n。例如,本發明的遮罩100長度為100mm,則具有從現有的遮罩10的1m減小為1/10的長度,因此在100mm的總長度中發生1μm的PPA誤差,使對準誤差顯著下降。The existing mask 10 of FIG. 1 includes six units C1 to C6 and therefore has a longer length, while the mask 100 of the present invention includes one unit C and therefore has a shorter length, so the PPA (pixel position accuracy) is distorted. will become smaller. Assuming that the length of the mask 10 including multiple units C1 ~ C6, ... is 1 m, and a PPA error of 10 μm occurs in the total length of 1 m, the mask 100 of the present invention can be reduced with the relative length (equivalent to the unit C quantity decreases) so that the above error range is 1/n. For example, if the length of the mask 100 of the present invention is 100 mm, it has a length reduced from 1 m of the existing mask 10 to 1/10. Therefore, a PPA error of 1 μm occurs in the total length of 100 mm, significantly reducing the alignment error. .

另一方面,遮罩100具備多個單元C,若即使各個單元C與框架200的各個單元區域CR對應,對準誤差仍處於最小化範圍內,則遮罩100也可以與框架200的多個遮罩單元區域CR對應。或者,具有多個單元C的遮罩100也可以與一個遮罩單元區域CR對應。在這種情况下,考慮到基於對準的工藝時間和生産性,遮罩100優選具備盡可能少量的單元C。On the other hand, the mask 100 is provided with a plurality of units C. Even if each unit C corresponds to each unit area CR of the frame 200, if the alignment error is still within a minimized range, the mask 100 may be matched with a plurality of units C of the frame 200. Corresponds to the mask unit area CR. Alternatively, the mask 100 having a plurality of cells C may correspond to one mask unit region CR. In this case, in consideration of process time and productivity based on alignment, the mask 100 is preferably provided with as few cells C as possible.

就本發明而言,由於只需匹配遮罩100的一個單元C並確認對準狀態即可,因此與同時匹配多個單元C(C1~C6)並需要確認全部對準狀態的現有方法相比,可以顯著縮短製造時間。As far as the present invention is concerned, since only one unit C of the mask 100 needs to be matched and the alignment status is confirmed, compared with the existing method of matching multiple units C (C1~C6) at the same time and needing to confirm all the alignment statuses , which can significantly shorten manufacturing time.

即,本發明的框架一體型遮罩的製造方法與現有方法相比,能夠明顯縮短時間,該現有方法通過使包含於6個遮罩100的各個單元C11~C16分別與一個單元區域CR11~CR16對應並確認各個對準狀態的6次過程,同時匹配6個單元C1~C6,並且需要同時確認6個單元C1~C6的對準狀態。That is, the manufacturing method of the frame-integrated mask of the present invention can significantly shorten the time compared with the conventional method in which each unit C11 to C16 included in the six masks 100 is connected to one unit region CR11 to CR16 respectively. Corresponding to and confirming each alignment status 6 times, 6 units C1~C6 are matched at the same time, and the alignment status of 6 units C1~C6 needs to be confirmed at the same time.

另外,在本發明的框架一體型遮罩的製造方法中,使30個遮罩100分別與30個單元區域CR(CR11~CR56)對應並對準30次的過程中的產品產率,會明顯高於使分別包括6個單元C1~C6的5個遮罩10(參照圖2的(a))與框架20對應並對準5次過程中的現有產品的產率。由於在每次對應於6個單元C的區域中對準6個單元C1~C6的現有方法是明顯繁瑣、困難的作業,因此産品産率低。In addition, in the manufacturing method of the frame-integrated mask of the present invention, the product yield in the process of making 30 masks 100 correspond to 30 unit areas CR (CR11~CR56) and align them 30 times will be significantly improved. This is higher than the yield of existing products in the process of making five masks 10 each including six units C1 to C6 (refer to (a) of FIG. 2 ) correspond to and align with the frame 20 five times. Since the existing method of aligning 6 units C1 to C6 in an area corresponding to 6 units C at a time is an obviously tedious and difficult operation, the product yield is low.

另外,在圖11的(b)步驟中,如上所述,藉由層壓工藝將遮罩金屬膜110黏合於模板50上時,遮罩金屬膜110上會施加有約100℃的溫度。基於此,遮罩金屬膜110在施加有一部分拉伸力的狀態下黏合於模板50上。之後,遮罩100黏合與框架200上,若遮罩100與模板50分離,則遮罩100將會收縮預定程度。In addition, in step (b) of FIG. 11 , as described above, when the mask metal film 110 is bonded to the template 50 through a lamination process, a temperature of approximately 100° C. is applied to the mask metal film 110 . Based on this, the mask metal film 110 is adhered to the template 50 while applying a part of the tensile force. Afterwards, the mask 100 is bonded to the frame 200. If the mask 100 is separated from the template 50, the mask 100 will shrink to a predetermined degree.

當個遮罩100分別黏合於與其對應的遮罩單元區域CR之後,使模板50與遮罩100分離時,多個遮罩100施加向相反方向收縮的張力,故該力被抵銷,因此在遮罩單元片材部220不發生變形。例如,在附著於CR11單元區域的遮罩100與附著於CR12單元區域的遮罩100之間的第一柵格片材部223中,向附著於CR11單元區域的遮罩100的右側方向作用的張力與向附著於CR12單元區域的遮罩100的左側方向作用的張力相互抵消。由此,最大限度地降低基於張力的框架200[或者遮罩單元片材部220]變形,從而能夠最大限度地降低遮罩100[或者遮罩圖案P]的對準誤差。When each mask 100 is respectively adhered to its corresponding mask unit area CR and the template 50 is separated from the mask 100, the plurality of masks 100 exert tension to shrink in opposite directions, so the force is offset, so in The mask unit sheet portion 220 does not deform. For example, in the first grid sheet portion 223 between the mask 100 attached to the CR11 unit area and the mask 100 attached to the CR12 unit area, the mask 100 attached to the CR11 unit area acts in the right direction. The tension and the tension acting in the left direction of the mask 100 attached to the CR12 unit area cancel each other out. Thereby, the deformation of the frame 200 [or the mask unit sheet part 220 ] due to tension is minimized, so that the alignment error of the mask 100 [or the mask pattern P] can be minimized.

圖20是示出本發明之一實施例涉及之利用框架一體型遮罩100、200的OLED像素沉積裝置1000的概略圖。FIG. 20 is a schematic diagram illustrating an OLED pixel deposition apparatus 1000 using frame-integrated masks 100 and 200 according to an embodiment of the present invention.

參照圖20,OLED像素沉積裝置1000包括:磁板300,其容納有磁體310,並且排布有冷却水管350;沉積源供給部500,其從磁板300的下部供給有機物源600。Referring to FIG. 20 , the OLED pixel deposition device 1000 includes: a magnetic plate 300 housing a magnet 310 and arranged with cooling water pipes 350 ; a deposition source supply part 500 that supplies an organic source 600 from the lower part of the magnetic plate 300 .

磁板300與沉積源供給部500之間可以插入有用於沉積有機物源600的玻璃等目標基板900。目標基板900上可以以緊貼或非常接近的方式配置有使有機物源600按不同像素沉積的框架一體型遮罩100、200[或者FMM]。磁體310可以産生磁場,並藉由磁場緊貼到目標基板900上。A target substrate 900 such as glass for depositing the organic source 600 may be inserted between the magnetic plate 300 and the deposition source supply unit 500 . The target substrate 900 may be provided with a frame-integrated mask 100 or 200 [or FMM] that allows the organic source 600 to be deposited in different pixels in a close or very close manner. The magnet 310 can generate a magnetic field and adhere to the target substrate 900 through the magnetic field.

沉積源供給部500可以往返左右路徑並供給有機物源600,由沉積源供給部500供給的有機物源600可以通過形成於框架一體型遮罩100、200的圖案P並沉積於目標基板900的一側。通過框架一體型遮罩100、200的圖案P後之被沉積的有機物源600,可以用作OLED的像素700。The deposition source supply unit 500 can reciprocate the left and right paths and supply the organic source 600 . The organic source 600 supplied from the deposition source supply unit 500 can pass through the pattern P formed on the frame-integrated masks 100 and 200 and be deposited on one side of the target substrate 900 . The organic source 600 deposited after passing through the pattern P of the frame-integrated mask 100, 200 can be used as the pixel 700 of the OLED.

爲了防止由於陰影效應(Shadow Effect)發生的像素700的不均勻沉積,框架一體型遮罩100、200的圖案可以傾斜地形成S[或者以錐形S形成]。沿著傾斜表面,在對角線方向上通過圖案的有機物源600,也可以有助於像素700的形成,因此,能够整體上厚度均勻地沉積像素700。In order to prevent uneven deposition of the pixels 700 due to the shadow effect (Shadow Effect), the pattern of the frame-integrated mask 100, 200 may be formed obliquely S [or formed in a tapered S]. The organic matter source 600 passing through the pattern in the diagonal direction along the inclined surface may also contribute to the formation of the pixel 700, so that the pixel 700 can be deposited with a uniform thickness overall.

在高於像素沉積工藝溫度的第一溫度下,遮罩100黏合固定於框架200上,因此即使提升至用於沉積像素工藝的溫度,也對遮罩圖案P的位置幾乎不構成影響,遮罩100和相鄰的遮罩100之間的PPA能夠保持為不超過3μm。At the first temperature higher than the pixel deposition process temperature, the mask 100 is adhesively fixed on the frame 200 . Therefore, even if the temperature is raised to the temperature used for the pixel deposition process, it will have almost no impact on the position of the mask pattern P. The PPA between the mask 100 and the adjacent mask 100 can be maintained at no more than 3 μm.

如上所述,本發明列舉了優選實施例進行圖示和說明,但是不限於上述實施例,在不脫離本發明的精神的範圍內,該技術領域中具有通常知識者能够進行各種變形和變更。這種變形及變更均落在本發明和所附的申請專利範圍的範圍內。As mentioned above, the present invention has been illustrated and described by enumerating preferred embodiments, but is not limited to the above-described embodiments. A person skilled in the art can make various modifications and changes without departing from the spirit of the present invention. Such deformations and changes are within the scope of the present invention and the appended patent applications.

6:像素 10:條式遮罩 10’:遮罩 11:遮罩膜 13:圖案化 14:圖案 20:框架 21:導電性基材 26:空位置 50:模板 50a:中心部 50b:邊緣部 51:鐳射貫穿孔 55:臨時黏合部 56:基膜 57a、57b:黏著層 58a、58b:分離膜/離型膜 70:下部支撐體 75:吸附部 76:真空通道 90:真空吸盤 100:遮罩 110:遮罩膜 110’:遮罩金屬膜 200:框架 210:邊緣框架部 220、220’:遮罩單元片材部 221:邊緣片材部 223:第一柵格片材部 225:第二柵格片材部 229:吸附孔 300:磁板 310:有磁體 350:冷却水管 500:沉積源供給部 600:有機物源 700:像素 900:目標基板 1000:OLED像素沉積裝置 AG:空隙 C:單元、遮罩單元 C1~C6:單元 CM:化學處理 CR(CR11~CR56):遮罩單元區域 DM:虛設部、遮罩虛設部 D1~D1''、D2~D2'':距離 D:鐳射剪切 ET:加熱 F1~F2:拉伸 H:熱處理 L:鐳射 R:邊緣框架部的中空區域 Ra:表面粗糙度 P:遮罩圖案 PS:平坦化 PD:縮小像素間距 PD':像素間距 VS:施加吸附力、吸壓 US:施加超聲波 UV:施加UV W:焊接 WB:焊接焊珠 S:傾斜地形成;錐形 T1、T2:厚度6:pixel 10: Strip mask 10’:mask 11:Mask film 13:Patterning 14: Pattern 20:Frame 21: Conductive substrate 26: Empty position 50:Template 50a:Center 50b: Edge 51:Laser through hole 55: Temporary bonding part 56:Basilar membrane 57a, 57b: Adhesion layer 58a, 58b: Separation membrane/release membrane 70:Lower support body 75:Adsorption part 76:Vacuum channel 90: Vacuum suction cup 100:mask 110: Masking film 110’: mask metal film 200:Frame 210: Edge frame part 220, 220’: Sheet part of mask unit 221: Edge sheet part 223: The first grid sheet department 225: Second grid sheet part 229: Adsorption hole 300:Magnetic board 310: There is a magnet 350: Cooling water pipe 500: Deposition source supply department 600:Organic source 700: pixels 900:Target substrate 1000:OLED pixel deposition device AG:gap C: unit, mask unit C1~C6: unit CM: chemical treatment CR(CR11~CR56): Mask unit area DM: Dummy part, mask dummy part D1~D1'', D2~D2'': distance D:Laser cutting ET: heating F1~F2: stretch H: Heat treatment L:Laser R: Hollow area of edge frame part Ra: surface roughness P: Mask pattern PS: Flatten PD: Reduce pixel pitch PD': pixel pitch VS: Apply adsorption force and suction pressure US: Apply ultrasonic waves UV: Apply UV W: welding WB: welding beads S: formed obliquely; tapered T1, T2: thickness

圖1是示出現有的OLED像素沉積用遮罩的概略圖。FIG. 1 is a schematic diagram showing a conventional mask for OLED pixel deposition.

圖2是示出現有的將遮罩黏合到框架的過程的概略圖。Figure 2 is a schematic diagram illustrating a conventional process of bonding a mask to a frame.

圖3是示出在現有的拉伸遮罩的過程中,發生單元之間的對準誤差的概略圖。FIG. 3 is a schematic diagram illustrating the occurrence of alignment errors between units in a conventional stretching mask process.

圖4是示出本發明的一實施例涉及的框架一體型遮罩的主視圖及側截面圖。4 is a front view and a side cross-sectional view showing a frame-integrated cover according to an embodiment of the present invention.

圖5是示出本發明的一實施例涉及的框架的主視圖及側截面圖。5 is a front view and a side cross-sectional view showing the frame according to the embodiment of the present invention.

圖6是示出本發明的一實施例涉及的框架的製造過程的概略圖。FIG. 6 is a schematic diagram showing the manufacturing process of the frame according to the embodiment of the present invention.

圖7是示出本發明的另一實施例涉及的框架的製造過程的概略圖。7 is a schematic diagram showing a manufacturing process of a frame according to another embodiment of the present invention.

圖8是示出現有的用於形成高解析度OLED的遮罩的概略圖。FIG. 8 is a schematic diagram showing a conventional mask used to form a high-resolution OLED.

圖9是示出本發明的一實施例涉及的以電鑄(electroforming)方式製造遮罩金屬膜的過程的概略圖。FIG. 9 is a schematic diagram illustrating a process of manufacturing a mask metal film by electroforming according to an embodiment of the present invention.

圖10是示出本發明的一實施例涉及的以軋延(rolling)方式製造遮罩金屬膜的過程的概略圖。FIG. 10 is a schematic diagram illustrating a process of manufacturing a mask metal film by rolling according to an embodiment of the present invention.

圖11至圖12是示出本發明的一實施例涉及的將遮罩金屬膜黏合於模板上並形成遮罩以製造遮罩支撑模板的過程的概略圖。11 to 12 are schematic diagrams illustrating a process of bonding a mask metal film to a template and forming a mask to manufacture a mask supporting template according to an embodiment of the present invention.

圖13是示出本發明的一實施例涉及的臨時黏合部的放大截面的概略圖。FIG. 13 is a schematic diagram showing an enlarged cross-section of a temporary bonding portion according to an embodiment of the present invention.

圖14是示出本發明的一實施例涉及的將遮罩支撑模板裝載於框架上的過程的概略圖。FIG. 14 is a schematic diagram illustrating a process of loading the mask support template on the frame according to an embodiment of the present invention.

圖15是示出本發明一實施例涉及的將模板裝載於框架上以使遮罩與框架的單元區域對應的狀態的概略圖。15 is a schematic diagram illustrating a state in which a template is mounted on a frame so that a mask corresponds to a unit area of the frame according to an embodiment of the present invention.

圖16是示出本發明的一實施例涉及的藉由吸附孔向遮罩施加吸附力的狀態的概略圖。FIG. 16 is a schematic diagram illustrating a state in which adsorption force is applied to the mask through adsorption holes according to an embodiment of the present invention.

圖17是示出本發明的一實施例涉及的形成有多個吸附孔的框架的部分概略圖。FIG. 17 is a partial schematic diagram showing a frame in which a plurality of adsorption holes are formed according to an embodiment of the present invention.

圖18是示出本發明的一實施例涉及的將遮罩黏合於框架上之後分離遮罩與模板的過程的概略圖。FIG. 18 is a schematic diagram illustrating the process of separating the mask and the template after the mask is bonded to the frame according to an embodiment of the present invention.

圖19是示出本發明的一實施例涉及的將遮罩黏合於框架上的狀態的概略圖。FIG. 19 is a schematic diagram showing a state in which the mask is bonded to the frame according to an embodiment of the present invention.

圖20是示出本發明的一實施例涉及的利用框架一體型遮罩的OLED像素沉積裝置的概略圖。FIG. 20 is a schematic diagram illustrating an OLED pixel deposition apparatus using a frame-integrated mask according to an embodiment of the present invention.

50:模板 50:Template

51:鐳射貫穿孔 51:Laser through hole

55:臨時黏合部 55: Temporary bonding part

70:下部支撐體 70:Lower support body

75:吸附部 75:Adsorption part

76:真空通道 76:Vacuum channel

90:目標基板 90:Target substrate

100:遮罩 100:mask

223:第一柵格片材部 223: The first grid sheet department

229:吸附孔 229: Adsorption hole

VS:施加吸附力、吸壓 VS: Apply adsorption force and suction pressure

WB:焊接焊珠 WB: welding beads

L:鐳射 L:Laser

Claims (15)

一種框架一體型遮罩的製造方法,其使至少一個遮罩與用於支撐遮罩的框架形成為一體,其中該方法包括以下步驟:(a)提供具有至少一個遮罩單元區域的框架;(b)提供遮罩;(c)使遮罩與框架的遮罩單元區域對應;以及(d)向遮罩的焊接部照射鐳射,以使遮罩黏合到框架上,與設有遮罩單元區域的框架角部相隔預定距離的部分上形成有多個吸附孔,在步驟(c)中,藉由多個吸附孔向與框架接觸的遮罩施加吸附力,以使遮罩密接於框架上,其中步驟(b)包括以下步驟:(b1)在導電性基材的至少一面以電鑄(electroforming)方式形成遮罩金屬膜;(b2)從導電性基材分離遮罩金屬膜;(b3)將遮罩金屬膜黏合於一面形成有臨時黏合部的模板上;以及(b4)在遮罩金屬膜上形成遮罩圖案以製造遮罩。 A method of manufacturing a frame-integrated mask, which integrates at least one mask with a frame for supporting the mask, wherein the method includes the following steps: (a) providing a frame with at least one mask unit area; ( b) provide a mask; (c) make the mask correspond to the mask unit area of the frame; and (d) irradiate the laser to the welding portion of the mask so that the mask is bonded to the frame and corresponds to the area where the mask unit is provided A plurality of adsorption holes are formed on the corners of the frame at a predetermined distance apart. In step (c), adsorption force is applied to the mask in contact with the frame through the plurality of adsorption holes, so that the mask is in close contact with the frame. Step (b) includes the following steps: (b1) electroforming a mask metal film on at least one side of the conductive substrate; (b2) separating the mask metal film from the conductive substrate; (b3) Bond the mask metal film to a template with a temporary adhesive portion formed on one side; and (b4) form a mask pattern on the mask metal film to manufacture a mask. 一種框架一體型遮罩的製造方法,其使至少一個遮罩與用於支撐遮罩的框架形成為一體,其中該方法包括以下步驟: (a)提供具有至少一個遮罩單元區域的框架;(b)提供遮罩;(c)使遮罩與框架的遮罩單元區域對應;以及(d)向遮罩的焊接部照射鐳射,以使遮罩黏合到框架上,與設有遮罩單元區域的框架角部相隔預定距離的部分上形成有多個吸附孔,在步驟(c)中,藉由多個吸附孔向與框架接觸的遮罩施加吸附力,以使遮罩密接於框架上,其中步驟(b)包括以下步驟:(b1)提供遮罩金屬膜,該遮罩金屬為經軋延(rolling)制造的薄膜(sheet);(b2)將遮罩金屬膜黏合到一面形成有臨時黏合部的模板上;(b3)在遮罩金屬膜上形成遮罩圖案以製造遮罩。 A method of manufacturing a frame-integrated mask, which integrates at least one mask with a frame used to support the mask, wherein the method includes the following steps: (a) providing a frame with at least one mask unit area; (b) providing a mask; (c) making the mask correspond to the mask unit area of the frame; and (d) irradiating the laser to the welded portion of the mask to The mask is bonded to the frame, and a plurality of adsorption holes are formed at a predetermined distance from the corner of the frame where the mask unit area is provided. In step (c), through the plurality of adsorption holes, the portion in contact with the frame is The mask applies adsorption force to make the mask closely adhere to the frame, wherein step (b) includes the following steps: (b1) providing a mask metal film, the mask metal is a film (sheet) manufactured by rolling (rolling) ; (b2) Bond the mask metal film to a template with a temporary adhesive portion formed on one side; (b3) Form a mask pattern on the mask metal film to manufacture a mask. 如請求項1或2所述的框架一體型遮罩的製造方法,其中步驟(c)為將模板裝載於框架上並使遮罩與框架的遮罩單元區域對應之步驟。 The manufacturing method of a frame-integrated mask as described in claim 1 or 2, wherein step (c) is a step of loading the template on the frame and making the mask correspond to the mask unit area of the frame. 如請求項1或2所述的框架一體型遮罩的製造方法,其中在步驟(c)中,下部支撐體佈置於框架的下部,該下部支撐體包括用於發生吸壓的吸附部。 The manufacturing method of a frame-integrated mask according to claim 1 or 2, wherein in step (c), a lower support body is arranged at the lower part of the frame, and the lower support body includes an adsorption part for generating suction pressure. 如請求項4所述的框架一体型遮罩的製造方法,其中下部支撐體 擠壓用於裝載遮罩的遮罩單元區域的相反面。 The manufacturing method of the frame-integrated mask according to claim 4, wherein the lower support body Extrude the opposite side of the mask cell area used to load the mask. 如請求項1或2所述的框架一体型遮罩的製造方法,其中吸附孔形成於不與遮罩的焊接部重疊之部分上。 The method of manufacturing a frame-integrated mask according to claim 1 or 2, wherein the adsorption holes are formed in a portion that does not overlap with the welded portion of the mask. 如請求項1所述的框架一体型遮罩的製造方法,其中導電性基材為晶圓(wafer),在步驟(b1)與步驟(b2)之間進一步執行熱處理遮罩金屬膜的工藝。 The manufacturing method of a frame-integrated mask as described in claim 1, wherein the conductive substrate is a wafer, and a process of heat-treating the mask metal film is further performed between steps (b1) and (b2). 如請求項2所述的框架一體型遮罩的製造方法,其中在步驟(b2)與步驟(b3)之間,還包括縮減模板上黏合的遮罩金屬膜的厚度之步驟,遮罩金屬膜之厚度縮減以CMP(Chemical Mechanical Polishing)、化學濕蝕刻(chemical wet etching)、幹蝕刻(dry etching)中任意一個方法執行。 The manufacturing method of the frame-integrated mask as described in claim 2, wherein between step (b2) and step (b3), it also includes the step of reducing the thickness of the mask metal film adhered to the template, and the mask metal film The thickness reduction is performed by any one of CMP (Chemical Mechanical Polishing), chemical wet etching, and dry etching. 如請求項1或2所述的框架一体型遮罩的製造方法,其中臨時黏合部是基於加熱可分離的黏合劑或者黏合片材,基於照射UV可分離的黏合劑或者黏合片材。 The manufacturing method of a frame-integrated mask as described in claim 1 or 2, wherein the temporary adhesive part is based on an adhesive or adhesive sheet that is detachable by heating and an adhesive or adhesive sheet that is detachable by irradiating UV. 如請求項1或2所述的框架一体型遮罩的製造方法,其中在遮罩金屬膜上形成遮罩圖案以製造遮罩之步驟包括:(1)在遮罩金屬膜上形成圖案化之絕緣部; (2)對絕緣部之間露出的遮罩金屬膜部分進行蝕刻以形成遮罩圖案;以及(3)去除絕緣部。 The manufacturing method of a frame-integrated mask according to claim 1 or 2, wherein the step of forming a mask pattern on the mask metal film to manufacture the mask includes: (1) forming a patterned pattern on the mask metal film Insulation Department; (2) Etching the portion of the mask metal film exposed between the insulating portions to form a mask pattern; and (3) removing the insulating portions. 如請求項1或2所述的框架一体型遮罩的製造方法,其中模板包括晶圓(wafer)、玻璃(glass)、氧化矽(silica)、耐熱玻璃、石英(quartz)、氧化鋁(Al2O3)、硼矽酸玻璃(borosilicate glass)、氧化鋯(zirconia)中的任意一種材料。 The method for manufacturing a frame-integrated mask as described in claim 1 or 2, wherein the template includes wafer, glass, silica, heat-resistant glass, quartz, aluminum oxide (Al2O3 ), borosilicate glass, or zirconia. 如請求項3所述的框架一体型遮罩的製造方法,其中從模板上部照射的鐳射穿過鐳射貫穿孔幷照射在遮罩的焊接部上。 The manufacturing method of a frame-integrated mask as described in claim 3, wherein the laser irradiated from the upper part of the template passes through the laser through hole and is irradiated on the welding part of the mask. 如請求項3所述的框架一体型遮罩的製造方法,其中還包括在步驟(d)之後對臨時黏合部進行加熱、化學處理、施加超聲波中的任意一個,藉以分離遮罩與模板之步驟。 The manufacturing method of the frame-integrated mask as described in claim 3, which further includes the step of heating, chemically treating, or applying ultrasonic waves to the temporary bonding portion after step (d) to separate the mask and the template. . 如請求項1或2所述的框架一体型遮罩的製造方法,其中框架包括邊緣框架部與遮罩單元片材部,遮罩單元片材部包括邊緣片材部;至少一個第一柵格片材部,其沿第一方向延伸形成且兩端連接於邊緣片材部;以及至少一個第二柵格片材部,其沿著與第一方向垂直之第二方向延伸形成並與第一柵格片材部交叉,且兩端連接于邊緣片材部。 The manufacturing method of a frame-integrated mask according to claim 1 or 2, wherein the frame includes an edge frame part and a mask unit sheet part, and the mask unit sheet part includes an edge sheet part; at least one first grid a sheet portion extending along a first direction and having both ends connected to the edge sheet portion; and at least one second grid sheet portion extending along a second direction perpendicular to the first direction and connected to the first The grid sheet parts intersect, and both ends are connected to the edge sheet parts. 如請求項1或2所述的框架一体型遮罩的製造方法,其中遮罩與 框架是恆範鋼(invar)、超恆範鋼(super invar)、鎳、鎳-鈷中任意一種材料。 The manufacturing method of the frame-integrated mask as described in claim 1 or 2, wherein the mask and The frame is made of any material including invar steel (invar), super invar steel (super invar), nickel, or nickel-cobalt.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220131116A1 (en) * 2020-10-28 2022-04-28 Canon Kabushiki Kaisha Vapor deposition mask and method of manufacturing device using vapor deposition mask

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111361168A (en) * 2020-03-20 2020-07-03 深圳市博泰数码智能技术有限公司 Positioning welding mask machine
CN113529081A (en) * 2020-04-09 2021-10-22 悟勞茂材料公司 Mask supporting template, method for manufacturing mask, and method for manufacturing frame-integrated mask
CN113540385A (en) * 2020-04-22 2021-10-22 悟勞茂材料公司 Mask metal film, mask metal film supporting template, mask supporting template, and method for manufacturing same
CN113604777B (en) * 2021-08-20 2023-04-18 京东方科技集团股份有限公司 Supporting plate, mask plate and preparation method of mask plate
JP2023038075A (en) * 2021-09-06 2023-03-16 キオクシア株式会社 Semiconductor manufacturing device and method for manufacturing semiconductor device
KR102460114B1 (en) * 2022-05-18 2022-10-28 풍원정밀(주) Hybrid type photomask and method of manufacturing thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1534383A (en) * 2003-03-27 2004-10-06 ����Sdi��ʽ���� Deposited mask of display device and its manufacturing method
CN103926808A (en) * 2013-01-15 2014-07-16 株式会社阿迪泰克工程 Indium Tin Oxide Pattern Exposure Device
CN103966547A (en) * 2014-05-06 2014-08-06 昆山允升吉光电科技有限公司 Composite mask plate assembly

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100671658B1 (en) * 2005-01-05 2007-01-19 삼성에스디아이 주식회사 Mask frame and method for fixing a mask on the mask frame
EP2397899A1 (en) * 2010-06-15 2011-12-21 Applied Materials, Inc. Mask holding device
JP2015127441A (en) * 2013-12-27 2015-07-09 大日本印刷株式会社 Manufacturing method of vapor deposition mask device
KR102322010B1 (en) * 2014-10-24 2021-11-05 삼성디스플레이 주식회사 Mask frame assembly, manufacturing method of the same and manufacturing method of organic light emitting display device there used
CN106350768A (en) * 2015-07-17 2017-01-25 凸版印刷株式会社 Metal mask for vapor deposition, method for manufacturing metal mask for vapor deposition
US9704786B2 (en) * 2015-09-25 2017-07-11 Infineon Technologies Ag Direct selective adhesion promotor plating
JP6304412B2 (en) * 2017-02-06 2018-04-04 大日本印刷株式会社 Method for manufacturing vapor deposition mask with metal frame, method for manufacturing organic semiconductor element, method for forming pattern
KR101986527B1 (en) * 2018-08-16 2019-06-07 주식회사 티지오테크 Producing method of mask integrated frame and frame

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1534383A (en) * 2003-03-27 2004-10-06 ����Sdi��ʽ���� Deposited mask of display device and its manufacturing method
CN103926808A (en) * 2013-01-15 2014-07-16 株式会社阿迪泰克工程 Indium Tin Oxide Pattern Exposure Device
CN103966547A (en) * 2014-05-06 2014-08-06 昆山允升吉光电科技有限公司 Composite mask plate assembly

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220131116A1 (en) * 2020-10-28 2022-04-28 Canon Kabushiki Kaisha Vapor deposition mask and method of manufacturing device using vapor deposition mask

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