TW202013447A - Producing method of mask integrated frame and frame - Google Patents
Producing method of mask integrated frame and frame Download PDFInfo
- Publication number
- TW202013447A TW202013447A TW108128965A TW108128965A TW202013447A TW 202013447 A TW202013447 A TW 202013447A TW 108128965 A TW108128965 A TW 108128965A TW 108128965 A TW108128965 A TW 108128965A TW 202013447 A TW202013447 A TW 202013447A
- Authority
- TW
- Taiwan
- Prior art keywords
- mask
- frame
- metal film
- manufacturing
- template
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 112
- 238000004519 manufacturing process Methods 0.000 claims abstract description 57
- 238000003466 welding Methods 0.000 claims abstract description 35
- 238000001179 sorption measurement Methods 0.000 claims abstract description 10
- 229910052751 metal Inorganic materials 0.000 claims description 106
- 239000002184 metal Substances 0.000 claims description 105
- 230000008569 process Effects 0.000 claims description 63
- 239000000758 substrate Substances 0.000 claims description 26
- 238000010438 heat treatment Methods 0.000 claims description 22
- 239000000853 adhesive Substances 0.000 claims description 21
- 230000001070 adhesive effect Effects 0.000 claims description 21
- 238000005323 electroforming Methods 0.000 claims description 15
- 239000000126 substance Substances 0.000 claims description 15
- 238000005096 rolling process Methods 0.000 claims description 14
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 7
- 229910001374 Invar Inorganic materials 0.000 claims description 6
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 6
- 238000001039 wet etching Methods 0.000 claims description 6
- QXZUUHYBWMWJHK-UHFFFAOYSA-N [Co].[Ni] Chemical compound [Co].[Ni] QXZUUHYBWMWJHK-UHFFFAOYSA-N 0.000 claims description 5
- 238000001312 dry etching Methods 0.000 claims description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- 239000005388 borosilicate glass Substances 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 238000005498 polishing Methods 0.000 claims description 4
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- 230000009467 reduction Effects 0.000 claims description 2
- 229910052593 corundum Inorganic materials 0.000 claims 1
- 238000009413 insulation Methods 0.000 claims 1
- 230000000873 masking effect Effects 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 229910001845 yogo sapphire Inorganic materials 0.000 claims 1
- 230000000274 adsorptive effect Effects 0.000 abstract 1
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 108
- 238000010586 diagram Methods 0.000 description 33
- 239000000463 material Substances 0.000 description 30
- 238000000151 deposition Methods 0.000 description 19
- 230000008021 deposition Effects 0.000 description 16
- 230000002829 reductive effect Effects 0.000 description 11
- 229910000831 Steel Inorganic materials 0.000 description 10
- 238000000926 separation method Methods 0.000 description 10
- 239000010959 steel Substances 0.000 description 10
- 239000012790 adhesive layer Substances 0.000 description 9
- 239000011324 bead Substances 0.000 description 9
- 230000007547 defect Effects 0.000 description 8
- 238000005530 etching Methods 0.000 description 8
- 239000005416 organic matter Substances 0.000 description 8
- 239000002904 solvent Substances 0.000 description 8
- 230000003746 surface roughness Effects 0.000 description 8
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 description 7
- 230000008901 benefit Effects 0.000 description 7
- 239000007788 liquid Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 239000000047 product Substances 0.000 description 5
- 238000007665 sagging Methods 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 238000005137 deposition process Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000012780 transparent material Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910001111 Fine metal Inorganic materials 0.000 description 2
- 229920000459 Nitrile rubber Polymers 0.000 description 2
- 239000005352 borofloat Substances 0.000 description 2
- 239000003575 carbonaceous material Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000000498 cooling water Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910021389 graphene Inorganic materials 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 210000004379 membrane Anatomy 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000036961 partial effect Effects 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 2
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 229920002799 BoPET Polymers 0.000 description 1
- 101000869592 Daucus carota Major allergen Dau c 1 Proteins 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 101000650136 Homo sapiens WAS/WASL-interacting protein family member 3 Proteins 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 1
- 102100027539 WAS/WASL-interacting protein family member 3 Human genes 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 210000002469 basement membrane Anatomy 0.000 description 1
- 239000010406 cathode material Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000013039 cover film Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 229910000601 superalloy Inorganic materials 0.000 description 1
- 239000002887 superconductor Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/20—Bonding
- B23K26/21—Bonding by welding
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J191/00—Adhesives based on oils, fats or waxes; Adhesives based on derivatives thereof
- C09J191/06—Waxes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
Abstract
Description
本發明是關於框架一體型遮罩的製造方法及框架。更加詳細而言,可以使遮罩不發生變形且可以穩定地得到支撑並移動,使遮罩黏合於框架時,能够改善遮罩與框架的黏著性,且使各個遮罩之間的對準(align)精確的框架一體型遮罩的製造方法及框架。The invention relates to a manufacturing method and a frame of a frame-integrated mask. In more detail, the mask can be stably supported and moved without deformation, and when the mask is adhered to the frame, the adhesion between the mask and the frame can be improved, and the alignment between the various masks ( align) precise frame integrated mask manufacturing method and frame.
作爲OLED製造工藝中形成像素的技術,主要使用FMM(Fine Metal Mask)方法,該方法將薄膜形式的金屬遮罩(Shadow Mask,陰影遮罩)緊貼於基板並在所需位置上沉積有機物。As a technology for forming pixels in the OLED manufacturing process, a FMM (Fine Metal Mask) method is mainly used, which closely adheres a shadow mask in the form of a thin film to a substrate and deposits organic matter at a desired position.
在現有的OLED製造工藝中,將遮罩製造成條狀、板狀等之後,將遮罩焊接固定到OLED像素沉積框架並使用。一個遮罩上可以具備與一個顯示器對應的多個單元。另外,爲了製造大面積OLED,可將多個遮罩固定於OLED像素沉積框架,在固定於框架的過程中,拉伸各個遮罩,以使其變得平坦。調節拉伸力以使遮罩的整體部分變得平坦是非常困難的作業。特別是,爲了使各個單元全部變得平坦,同時對準尺寸僅爲數μm至數十μm的遮罩圖案,需要微調施加到遮罩各側的拉伸力並且實時確認對準狀態的高度作業要求。In the existing OLED manufacturing process, after the mask is manufactured into a strip shape, a plate shape, etc., the mask is welded and fixed to the OLED pixel deposition frame and used. Multiple units corresponding to one display may be provided on one mask. In addition, in order to manufacture a large-area OLED, a plurality of masks can be fixed to the OLED pixel deposition frame. During the process of fixing to the frame, each mask is stretched to make it flat. It is very difficult to adjust the stretching force to flatten the entire part of the mask. In particular, in order to flatten all the cells and align the mask pattern with a size of only a few μm to several tens of μm, it is necessary to fine-tune the stretching force applied to each side of the mask and confirm the height of the alignment state in real time Claim.
儘管如此,在將多個遮罩固定於一個框架過程中,仍然存在遮罩之間以及遮罩單元之間對準不好的問題。另外,在將遮罩焊接固定於框架的過程中,遮罩膜的厚度過薄且面積大,因此存在遮罩因荷重而下垂或者扭曲的問題,以及焊接過程中因焊接部分發生的皺紋、毛邊(burr)等使遮罩單元的對準錯開的問題等。Nevertheless, in the process of fixing multiple masks to one frame, there is still a problem of poor alignment between the masks and between the mask units. In addition, in the process of welding and fixing the mask to the frame, the thickness of the mask film is too thin and the area is large, so there is a problem that the mask sags or twists due to load, and wrinkles and burrs that occur in the welded part during the welding process (burr), etc. problems such as misalignment of the mask unit.
在超高清的OLED中,現有的QHD(Quarter High Definition)畫質為500-600PPI(pixel per inch),像素的尺寸達到約30-50μm,而4K UHD(Ultra High Definition)、8K UHD高清具有比之更高的~860PPI,~1600PPI等的解析度。如此,考慮到超高清的OLED的像素尺寸,需要將各單元之間的對準誤差縮減為數μm程度,超出這一誤差將導致産品的不良,所以産率可能極低。因此,需要開發能够防止遮罩的下垂或者扭曲等變形並且使對準精確的技術,以及將遮罩固定於框架的技術等。In ultra-high-definition OLED, the existing QHD (Quarter High Definition) image quality is 500-600PPI (pixel per inch), the pixel size reaches about 30-50μm, and 4K UHD (Ultra High Definition), 8K UHD HD has a comparison The higher resolution is ~860PPI, ~1600PPI, etc. In this way, considering the pixel size of the ultra-high-definition OLED, the alignment error between the units needs to be reduced to a degree of several μm. Exceeding this error will result in defective products, so the yield may be extremely low. Therefore, it is necessary to develop a technique capable of preventing deformation such as sagging or twisting of the mask and accurately aligning it, and a technique of fixing the mask to the frame and the like.
發明欲解决之課題 因此,本發明是爲瞭解决上述現有技術中的問題而提出的,使遮罩黏合於框架上時,能夠防止遮罩發生變形且改善遮罩與框架的黏著性之框架一體型遮罩的製造方法及框架。Problems to be solved by invention Therefore, the present invention is proposed to solve the above-mentioned problems in the prior art. When the mask is adhered to the frame, it can prevent the deformation of the mask and improve the adhesion between the mask and the frame. Method and framework.
又,本發明的目的在於提供一種遮罩與框架可構成一體型構造之框架一體型遮罩的製造方法。In addition, an object of the present invention is to provide a method for manufacturing a frame-integrated mask in which the mask and the frame can form an integrated structure.
又,本發明的目的在於提供一種防止遮罩下垂或扭曲等的變形,並且可準確地進行對準之框架一體型遮罩的製造方法及框架。In addition, an object of the present invention is to provide a method and frame for manufacturing a frame-integrated mask that can prevent deformation such as sagging or twisting of the mask and can be accurately aligned.
又,本發明的目的在於提供一種明顯縮短製造時間,並且使産率顯著提升之框架一體型遮罩的製造方法。In addition, an object of the present invention is to provide a method for manufacturing a frame-integrated mask that significantly reduces manufacturing time and significantly improves productivity.
解決課題之方法 本發明的上述目的藉由一種框架一體型遮罩的製造方法達成,其使至少一個遮罩與用於支撐遮罩的框架形成為一體,其中該方法包括以下步驟:(a)提供具有至少一個遮罩單元區域的框架;(b)提供遮罩;(c)使遮罩與框架的遮罩單元區域對應;以及(d)向遮罩的焊接部照射鐳射,以使遮罩黏合到框架上,與設有遮罩單元區域的框架角部相隔預定距離的部分上形成有多個吸附孔,步驟(c)中,藉由多個吸附孔向與框架接觸的遮罩施加吸附力,以使遮罩密接於框架上。Ways to solve the problem The above object of the present invention is achieved by a method for manufacturing a frame-integrated mask that integrates at least one mask with a frame for supporting the mask, wherein the method includes the following steps: (a) providing at least one The frame of the mask unit area; (b) provide the mask; (c) make the mask correspond to the mask unit area of the frame; and (d) irradiate laser to the welding part of the mask to make the mask adhere to the frame , A plurality of suction holes are formed at a predetermined distance from the corner of the frame where the mask unit area is provided, and in step (c), a suction force is applied to the mask in contact with the frame through the multiple suction holes, so that The mask is tightly attached to the frame.
步骤(b)可包括以下步驟:(b1)在導電性基材的至少一面以電鑄(electroforming)方式形成遮罩金屬膜;(b2)從導電性基材分離遮罩金屬膜;(b3)將遮罩金屬膜黏合於一面形成有臨時黏合部的模板上;以及(b4)在遮罩金屬膜上形成遮罩圖案以製造遮罩。Step (b) may include the following steps: (b1) forming a mask metal film by electroforming on at least one side of the conductive substrate; (b2) separating the mask metal film from the conductive substrate; (b3) The mask metal film is adhered to the template on which one temporary bonding part is formed; and (b4) A mask pattern is formed on the mask metal film to manufacture the mask.
步骤(b)可包括以下步驟:(b1)提供遮罩金屬膜,該遮罩金屬膜為經軋延(rolling)制造的薄膜(sheet);(b2)將遮罩金屬膜黏合到一面形成有臨時黏合部的模板上;(b3)在遮罩金屬膜上形成遮罩圖案以製造遮罩。Step (b) may include the following steps: (b1) providing a mask metal film, the mask metal film being a sheet manufactured by rolling; (b2) bonding the mask metal film to one side to form On the template of the temporary bonding part; (b3) forming a mask pattern on the mask metal film to manufacture a mask.
步驟(c)可以為將模板裝載於框架上並使遮罩與框架的遮罩單元區域對應之步驟。Step (c) may be a step of loading the template on the frame and making the mask correspond to the mask unit area of the frame.
在步驟(c)中,下部支撐體可佈置於框架的下部,該下部支撐體包括用於發生吸壓的吸附部。In step (c), a lower support body may be arranged at a lower portion of the frame, the lower support body including an adsorption portion for generating suction pressure.
下部支撐體可擠壓用於裝載遮罩的遮罩單元區域的相反面。The lower support may squeeze the opposite side of the mask unit area for loading the mask.
吸附孔可形成於不與遮罩的焊接部重疊之部分上。The suction hole may be formed on a portion that does not overlap the welding portion of the mask.
導電性基材為晶圓(wafer),在步骤(b1)與步驟(b2)之间進一步執行熱處理遮罩金屬膜的工藝。The conductive substrate is a wafer, and a process of heat-treating the mask metal film is further performed between step (b1) and step (b2).
在步骤(b1)與步驟(b2)之间,還包括縮減模板上黏合的遮罩金屬膜的厚度之步骤,遮罩金屬膜之厚度縮減能夠以CMP(Chemical Mechanical Polishing)、化學濕蝕刻(chemical wet etching)、幹蝕刻(dry etching)中任意一個方法執行。Between step (b1) and step (b2), a step of reducing the thickness of the mask metal film bonded on the template is also included. The thickness reduction of the mask metal film can be performed by CMP (Chemical Mechanical Polishing) or chemical wet etching (chemical Any one of wet etching and dry etching.
臨時黏合部可以是基於加熱可分離的黏合劑或者黏合片材,基於照射UV可分離的黏合劑或者黏合片材。The temporary adhesive part may be an adhesive or adhesive sheet that is separable based on heating, and an adhesive or adhesive sheet that is separable based on UV irradiation.
在遮罩金屬膜上形成遮罩圖案以製造遮罩之步驟包括:(1)在遮罩金屬膜上形成圖案化之絕緣部;(2)對絕緣部之間露出的遮罩金屬膜部分進行蝕刻以形成遮罩圖案;以及(3)去除絕緣部。The steps of forming a mask pattern on the mask metal film to manufacture a mask include: (1) forming a patterned insulating portion on the mask metal film; (2) performing a portion of the mask metal film exposed between the insulating portions Etching to form a mask pattern; and (3) removing the insulating portion.
模板可包括晶圓(wafer)、玻璃(glass)、氧化矽(silica)、耐熱玻璃、石英(quartz)、氧化鋁(Al2 O3 )、硼矽酸玻璃(borosilicate glass)、氧化鋯(zirconia)中的任意一種材料。Templates may include wafer, glass, silica, heat-resistant glass, quartz, alumina (Al 2 O 3 ), borosilicate glass, zirconia ) Any one of the materials.
從模板上部照射的鐳射穿過鐳射貫穿孔並可照射到在遮罩的焊接部上。The laser irradiated from the upper part of the template passes through the laser through hole and can be irradiated on the welding part of the shield.
還可包括在步驟(d)之後對臨時黏合部進行加熱、化學處理、施加超聲波中的任意一個,藉以分離遮罩與模板之步驟。After the step (d), the temporary bonding part may be heated, chemically treated, or applied with ultrasonic waves to separate the mask and the template.
框架可包括邊緣框架部與遮罩單元片材部,遮罩單元片材部可包括邊緣片材部;至少一個第一柵格片材部,其沿第一方向延伸形成且兩端連接於邊緣片材部;以及至少一個第二柵格片材部,其沿著與第一方向垂直之第二方向延伸形成並與第一柵格片材部交叉,且兩端連接於邊緣片材部。The frame may include an edge frame portion and a mask unit sheet portion, and the mask unit sheet portion may include an edge sheet portion; at least one first grid sheet portion extending along the first direction and connected at both ends to the edge A sheet portion; and at least one second grid sheet portion extending in a second direction perpendicular to the first direction and crossing the first grid sheet portion, and both ends are connected to the edge sheet portion.
遮罩與框架可以是恆範鋼(invar)、超恆範鋼(super invar)、鎳、鎳-鈷中任意一種材料。The mask and the frame may be any one of invar, super invar, nickel, and nickel-cobalt.
另外,本發明的上述目的藉由一種框架而達成,其在由多個遮罩與用於支撐遮罩的框架一體形成之框架一體型遮罩中使用,其中該框架包括:邊緣框架部,其包括中空區域;遮罩單元片材部,其沿第一方向及與第一方向垂直之第二方向中的至少一個方向具備多個遮罩單元區域,且連接於邊緣框架部,遮罩單元片材部上形成有多個吸附孔。In addition, the above object of the present invention is achieved by a frame that is used in a frame-integrated mask in which a plurality of masks are integrally formed with a frame for supporting the mask, wherein the frame includes: an edge frame portion, which Including a hollow area; a mask unit sheet portion, which is provided with a plurality of mask unit areas along at least one of the first direction and the second direction perpendicular to the first direction, and is connected to the edge frame portion, the mask unit sheet A plurality of suction holes are formed in the material portion.
與設有遮罩單元區域的框架角部相隔預定距離的部分上形成有多個吸附孔, 吸附孔可形成於不與遮罩的焊接部重疊的部分上。A plurality of suction holes are formed in a portion at a predetermined distance from a corner of the frame where the mask unit area is provided, and the suction holes may be formed in a portion that does not overlap the welding portion of the mask.
框架的下部還可佈置有用於發生吸壓的吸附部。The lower part of the frame may also be arranged with a suction part for generating suction pressure.
下部支撐體上形成有至少一個真空通道,該真空通道能夠將外部的吸壓發生裝置上發生的吸壓傳遞給吸附部。At least one vacuum channel is formed on the lower support body, and the vacuum channel can transmit the suction pressure generated on the external suction pressure generating device to the suction part.
發明效果 據如上構成的本發明,使遮罩黏合於框架上時,能夠防止遮罩發生變形且改善遮罩與框架的黏著性。Invention effect According to the present invention configured as described above, when the mask is adhered to the frame, the deformation of the mask can be prevented and the adhesion between the mask and the frame can be improved.
又,根據本發明,遮罩與框架可構成一體型結構。Furthermore, according to the present invention, the cover and the frame can form an integrated structure.
又,根據本發明,可防止遮罩下垂或扭曲等的變形,並且可準確地進行對準。In addition, according to the present invention, deformation such as sagging or twisting of the mask can be prevented, and alignment can be accurately performed.
又,根據本發明,可使製造時間顯著地縮短,且使產率顯著上昇。In addition, according to the present invention, the manufacturing time can be significantly shortened, and the yield can be significantly increased.
後述的對於本發明的詳細說明將參照附圖,該附圖將能够實施本發明的特定實施例作爲示例示出。充分詳細地說明這些實施例,以使所屬技術領域中具有通常知識者能夠實施本發明。應當理解,本發明的各種實施例雖然彼此不同,但是並非相互排斥。例如,在此記載的特定形狀、結構及特性與一實施例有關,在不脫離本發明的精神及範圍的情況下,能夠實現為其他實施例。另外,應當理解,各個公開的實施例中的個別構成要素的位置或配置,在不脫離本發明的精神及範圍的情況下,能夠進行變更。因此,後述的詳細說明不應被視爲具有限制意義,只要適當地說明,則本發明的範圍僅由所附的申請專利範圍及與其等同的所有範圍限定。圖式中相似的符號從多方面表示相同或相似的功能,爲了方便起見,長度、面積、厚度及其形狀可以誇大表示。The detailed description of the present invention described later will refer to the accompanying drawings, which show specific embodiments capable of implementing the present invention as examples. These embodiments are described in sufficient detail to enable those skilled in the art to implement the present invention. It should be understood that although the various embodiments of the present invention are different from each other, they are not mutually exclusive. For example, the specific shapes, structures, and characteristics described herein are related to one embodiment, and can be implemented as other embodiments without departing from the spirit and scope of the present invention. In addition, it should be understood that the position or arrangement of individual constituent elements in each disclosed embodiment can be changed without departing from the spirit and scope of the present invention. Therefore, the following detailed description should not be regarded as limiting, and as long as it is properly described, the scope of the present invention is limited only by the scope of the attached patent application and all ranges equivalent thereto. Similar symbols in the drawings represent the same or similar functions in many ways. For convenience, the length, area, thickness, and shape can be exaggerated.
以下,將參照圖式對本發明的優選實施例進行詳細說明,以便所屬技術領域中具有通常知識者能够容易地實施本發明。Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings so that those skilled in the art can easily implement the present invention.
圖1是示出現有的OLED像素沉積用遮罩的概略圖。FIG. 1 is a schematic diagram showing a conventional mask for OLED pixel deposition.
參照圖1,現有的遮罩10可以以條式(Stick-Type)或者板式(Plate-Type)製造。圖1的(a)中示出的遮罩10作爲條式遮罩,可以將條的兩側焊接固定於OLED像素沉積框架並使用。圖1的(b)中示出的遮罩100作爲板式(Plate-Type)遮罩,可以使用於大面積的像素形成工藝。Referring to FIG. 1, the existing
遮罩10的主體(Body,或者遮罩膜11)具備多個顯示單元C。一個單元C與智慧手機等的一個顯示器(display)對應。單元C中形成有像素圖案P,以便與顯示器的各個像素對應。放大單元C時,顯示與R、G、B對應的多個像素圖案P。作為一例,在單元C中形成有像素圖案P,以便具有70×140解析度。即,大量的像素圖案P形成集合,以構成一個單元C,並且多個單元C可以形成於遮罩10上。The body (body or mask film 11) of the
圖2是示出現有的將遮罩10黏合於框架20的過程的概略圖。圖3是示出在現有的拉伸F1~F2遮罩10的過程中發生單元之間的對準誤差的概略圖。以圖1的(a)示出的具備6個單元C(C1~C6)的條式遮罩10為例進行說明。FIG. 2 is a schematic diagram showing a conventional process of bonding the
參照圖2的(a),首先,應將條式遮罩10平坦地展開。沿著條式遮罩10的長軸方向施加拉伸力F1~F2,隨著拉伸,展開條式遮罩10。在該狀態下,將條式遮罩10裝載於方框形狀的框架20上。條式遮罩10的單元C1~C6將位於框架20的框內部空白區域部分。框架20的尺寸可以足以使一個條式遮罩10的單元C1~C6位於框內部空白區域,也可以足以使多個條式遮罩10的單元C1~C6位於框內部空白區域。Referring to (a) of FIG. 2, first, the
參照圖2的(b),微調施加到條式遮罩10的各側的拉伸力F1~F2,同時對準後,隨著焊接W條式遮罩10側面的一部分,將條式遮罩10和框架20彼此連接。圖2的(c)示出彼此連接的條式遮罩10和框架的側截面。Referring to (b) of FIG. 2, finely adjust the tensile forces F1 to F2 applied to each side of the
參照圖3,儘管微調施加到條式遮罩10的各側的拉伸力F1~F2,但是顯示出遮罩單元C1~C3彼此之間對準不好的問題。例如,單元C1~C3的圖案P之間的距離D1~D1''、D2~D2''彼此不同,或者圖案P歪斜。由於條式遮罩10具有包括多個(作為一例,為6個)單元C1~C6的大面積,且具有數十μm的非常薄的厚度,因此容易因荷重而下垂或者扭曲。另外,調節拉伸力F1~F2,以使各個單元C1~C6全部變得平坦,同時通過顯微鏡實施確認各個單元C1~C6之間的對準狀態是非常困難的作業。Referring to FIG. 3, although fine adjustments of the stretching forces F1 to F2 applied to the sides of the
因此,拉伸力F1~F2的微小誤差可能引起條式遮罩10各單元C1~C3的拉伸或者展開程度的誤差,由此,導致遮罩圖案P之間的距離D1~D1''、D2~D2''不同。雖然完美地對準以使誤差為0是非常困難的,但是爲了避免尺寸爲數μm至數十μm的遮罩圖案P對超高清OLED的像素工藝造成壞影響,對準誤差優選不大於3μm。將如此相鄰的單元之間的對準誤差稱為像素定位精度(pixel position accuracy,PPA)。Therefore, a slight error in the stretching forces F1 to F2 may cause an error in the degree of stretching or unfolding of the cells C1 to C3 of the
另外,將大概6-20個條式遮罩10分別連接在一個框架20,同時使多個條式遮罩10之間,以及條式遮罩10的多個單元C-C6之間的對準狀態精確是非常困難的作業,並且只能增加基於對準的工藝時間,這成爲降低生産性的重要理由。In addition, approximately 6-20
另一方面,將條式遮罩10連接固定到框架20後,施加到條式遮罩10的拉伸力F1~F2能够反向地作用於框架20。即,由於拉伸力F1~F2而繃緊拉伸的條式遮罩10連接在框架20後,能夠將張力(tension)作用於框架20。通常,該張力不大,不會對框架20產生大的影響,但是在框架20的尺寸實現小型化且剛性變低的情況下,這種張力可能使框架20細微變形。如此,可能發生破壞多個單元C~C6間的對準狀態的問題。On the other hand, after the
鑒於此,本發明提出能够使遮罩100與框架200形成一體式結構的框架200以及框架一體型遮罩。與框架200形成一體的遮罩100不僅防止發生下垂或者扭曲等變形,並且能夠與框架200精確地對準。當遮罩100連接到框架200時,不對遮罩100施加任何拉伸力,因此遮罩100連接到框架200後,可以不對遮罩200施加引起變形的張力。並且,本發明具有能夠顯著地縮短將遮罩100一體地連接到框架200上的製造時間,並且顯著提升産率之優點。In view of this, the present invention proposes a
圖4是示出本發明之一實施例涉及的框架一體型遮罩的主視圖(圖4的(a))及側截面圖(圖4的(b)),圖5是示出本發明之一實施例涉及的框架的主視圖(圖5的(a))及側截面圖(圖5的b)。4 is a front view (FIG. 4(a)) and a side cross-sectional view (FIG. 4(b)) showing a frame-integrated mask according to an embodiment of the present invention, and FIG. 5 is a diagram showing the present invention. A front view ((a) of FIG. 5) and a side cross-sectional view (b of FIG. 5) of the frame according to an embodiment.
參照圖4以及圖5,框架一體型遮罩可以包括多個遮罩100以及一個框架200。換句話說,是將多個遮罩100分別黏合於框架200的形態。以下,爲了便於說明,以四角形狀的遮罩100為例進行說明,但是遮罩100在黏合於框架200之前,可以是兩側具備用於 夾持的突出部的條式遮罩形狀,遮罩100黏合於框架200後,可以去除突出部。4 and 5, the frame-integrated mask may include a plurality of
各個遮罩100上形成有多個遮罩圖案P,一個遮罩100可以形成有一個單元C。一個遮罩單元C可以與智慧手機等的一個顯示器對應。A plurality of mask patterns P are formed on each
為形成較薄的厚度,遮罩100可以電鑄(electroforming)方式形成。或者,遮罩100可以使用藉由軋延(rolling)生成的薄膜(sheet)。遮罩100可以是熱膨脹係數約為1.0×10-6
/℃的恆範鋼(invar)或約為1.0×10-7
/℃的超恆範鋼(super invar)材料。由於這種材料的遮罩100的熱膨脹係數非常低,遮罩的圖案形狀因熱能變形的可能性小,在製造高解析度的OLED中,可以用作FMM(Fine Metal Mask)、陰影遮罩(Shadow Mask)。此外,考慮到最近開發在溫度變化值不大的範圍內實施像素沉積工藝的技術,遮罩100也可以是熱膨脹係數比之略大的鎳(Ni)、鎳-鈷(Ni-Co)等材料。To form a thinner thickness, the
若使用軋延薄膜,則具有厚度大於藉由電鑄形成的鍍膜的厚度之問題,但由於熱膨脹係數CTE低,因此具有無需進行額外的熱處理工藝,且耐腐蝕性強之優點。If a rolled film is used, there is a problem that the thickness is greater than the thickness of the plating film formed by electroforming. However, since the coefficient of thermal expansion CTE is low, there is no need to perform an additional heat treatment process, and has the advantages of strong corrosion resistance.
框架200以能够黏合多個遮罩100的形式形成。包括最週邊邊緣在內,框架200可以包括沿著第一方向(例如,橫向)、第二方向(例如,竪向)形成的多個角部。這種多個角部可以在框架200上劃分用於黏合遮罩100的區域。The
框架200可以包括大概呈四角形狀、方框形狀的邊緣框架部210。邊緣框架部210的內部可以是中空形狀。即,邊緣框架部210可以包括中空區域R。框架200可以由恒範鋼、超恒範鋼、鋁、鈦等金屬材料形成,考慮到熱變形,優選由與遮罩具有相同熱膨脹係數的恒範鋼、超恒範鋼、鎳、鎳-鈷等材料形成,這些材料均可應用於所有作為框架200的構成要素的邊緣框架部210、遮罩單元片材部220。The
另外,框架200具備多個遮罩單元區域CR,並且可以包括連接到邊緣框架部210的遮罩單元片材部220。遮罩單元片材部220與遮罩100相同,可通過電鑄、軋延形成,或者通過其他的成膜工藝形成。另外,遮罩單元片材部220可以通過鐳射劃線、蝕刻等在平面狀片材(sheet)上形成多個遮罩單元區域CR後,連接到邊緣框架部210。或者,遮罩單元片材部220可以將平面狀的片材連接到邊緣框架部210後,通過鐳射劃線、蝕刻等形成多個遮罩單元區域CR。本說明書中主要對首先在遮罩單元片材部220形成多個遮罩單元區域CR後,連接到邊緣框架部210的情況進行說明。In addition, the
遮罩單元片材部220可以包括邊緣片材部221以及第一柵格片材部223、第二柵格片材部225中的至少一個。邊緣片材部221以及第一柵格片材部223、第二柵格片材部225是指在同一片材上劃分的各個部分,它們彼此之間形成為一體。The mask
邊緣片材部221可以實質上連接到邊緣框架部210。因此,邊緣片材部221可以具有與邊緣框架部210對應的大致四角形狀、方框形狀。The
另外,第一柵格片材部223可以沿著第一方向(橫向)延伸形成。第一柵格片材部223以直線形態形成,其兩端可以連接到邊緣片材部221。當遮罩單元片材部220包括多個第一柵格片材部223時,各個第一柵格片材部223優選具有相同的間距。In addition, the first
另外,進一步地,第二柵格片材部225可以沿著第二方向(竪向)延伸形成,第二栅格片材部225以直線形態形成,其兩端可以連接到邊緣片材部221。第一柵格片材部223和第二柵格片材部225可以彼此垂直交叉。當遮罩單元片材部220包括多個第二柵格片材部225時,各個第二柵格片材部225間優選具有相同的間距。In addition, further, the second
另一方面,第一栅格片材部223之間的間距和第二柵格片材部225之間的間距,可以根據遮罩單元C的尺寸而相同或不同。On the other hand, the pitch between the first
第一柵格片材部223與第二柵格片材部225雖然具有薄膜形態的薄的厚度,但是垂直於長度方向的截面的形狀可以是諸如矩形、平行四邊形的四邊形形狀、三角形形狀等,邊、角的一部分可以形成圓形。截面形狀可以在鐳射劃線、蝕刻等過程中進行調節。Although the first
邊緣框架部210的厚度可以大於遮罩單元片材部220的厚度。由於邊緣框架部210負責框架200的整體剛性,因此可以以數mm至數cm的厚度形成。The thickness of the
就遮罩單元片材部220而言,實際上製造厚片材的工藝困難,若過厚,則有可能在OLED像素沉積工藝中有機物源600(參照圖20)堵塞通過遮罩100的路徑。相反,若過薄,則有可能難以確保足以支撐遮罩100的剛性。由此,遮罩單元片材部220優選比邊緣框架部210的厚度薄,但是比遮罩100更厚。遮罩單元片材部220的厚度可以約為0.1mm至1mm。並且,第一柵格片材部223、第二柵格片材部225的寬度可以約為1~5mm。For the mask
在平面狀片材中,除了邊緣片材部221、第一柵格片材部223、第二柵格片材部225佔據的區域以外,可以提供多個遮罩單元區域CR(CR11~CR56)。從另一個角度來說,遮罩單元區域CR可以是指在邊緣框架部210的中空區域R中,除了邊緣片材部221、第一柵格片材部223、第二柵格片材部225佔據的區域以外的空白區域。In the planar sheet, in addition to the area occupied by the
隨著遮罩100的單元C與該遮罩單元區域CR對應,實質上可以用作通過遮罩圖案P沉積OLED的像素的通道。如前所述,一個遮罩單元C與智慧手機等的一個顯示器對應。一個遮罩100中可以形成有用於構成一個單元C的多個遮罩圖案P。或者,一個遮罩100具備多個單元C且各個單元C可以與框架200的各個單元區域CR對應,但是爲了精確地對準遮罩100,需要避免大面積的遮罩100,優選為具備一個單元C的小面積遮罩100。或者,也可以是具有多個單元C的一個遮罩100與遮罩200的一個單元區域CR對應。此時,爲了精確地對準,可以考慮對應具有2-3個單元C的遮罩100。As the cell C of the
遮罩200具備多個遮罩單元區域CR,可以將各個遮罩100以各個遮罩單元C與各個遮罩單元區域CR分別對應的方式黏合。各個遮罩100可以包括形成有多個遮罩圖案P的遮罩單元C與遮罩單元C周邊的虛擬部(相當於除了單元C以外的遮罩膜110部分)。虛擬部可以只包括遮罩膜110,或者可以包括形成有與遮罩圖案P類似形態的規定的虛擬圖案的遮罩膜110。遮罩單元C與框架200的遮罩單元區域CR對應,虛擬部的一部分或者全部可以黏合於框架200(遮罩單元片材部220)。由此,遮罩100和框架200可以形成一體式結構。The
另一方面,根據另一實施例,框架不是以將遮罩單元片材部220黏合於邊緣框架部210的方式製造,而是可以使用在邊緣框架部210的中空區域R部分直接形成與邊緣框架部210成為一體的柵格框架(相當於柵格片材部223、225)的框架。這種形態的框架也包括至少一個遮罩單元區域CR,可以使遮罩100與遮罩單元區域CR對應,以製造框架一體型遮罩。On the other hand, according to another embodiment, the frame is not manufactured by adhering the mask
以下,對框架一體型遮罩的製造過程進行說明。Hereinafter, the manufacturing process of the frame-integrated mask will be described.
首先,可以提供圖4及圖5中所述的框架200。圖6是示出本發明的一實施例涉及的框架200的製造過程的概略圖。First, the
參照圖6的(a),提供邊緣框架部210。邊緣框架部210可以是包括中空區域R的方框形狀。Referring to (a) of FIG. 6, an
其次,參照圖6的(b),製造遮罩單元片材部220。遮罩單元片材部220使用電鑄、軋延或者其他的成膜工藝,製造平面狀的片材後,通過鐳射劃線、蝕刻等去除遮罩單元區域CR部分,從而可以製造。本說明書中,以形成6×5的遮罩單元區域CR(CR11~CR56)為例進行說明。可以存在5個第一柵格片材部223與4個第二柵格片材部225。Next, referring to (b) of FIG. 6, the mask
然後,可以使遮罩單元片材部220與邊緣框架部210對應。在對應的過程中,可以在拉伸F1~F4遮罩單元片材部220的所有側部以使遮罩單元片材部220平坦伸展的狀態下,使邊緣片材部221與邊緣框架部210對應。在一側部也能以多個點(作為圖6的(b)的例,1~3點)夾持遮罩單元片材部220並進行拉伸。另一方面,也可以不是所有側部,而是沿著一部分側部方向,拉伸F1、F2遮罩單元片材部220。Then, the mask
然後,使遮罩單元片材部220與邊緣框架部210對應時,可以將遮罩單元片材部220的邊緣片材部221以焊接W方式黏合。優選地,焊接W所有側部,以便遮罩單元片材部220牢固地黏合於邊緣框架部210。應當最大限度地靠近框架部210的角部側進行焊接W,才能最大限度地減少邊緣框架部210和遮罩單元片材部220之間的翹起空間,並提升黏著性。焊接W部分可以以線(line)或者點(spot)形狀生成,具有與遮罩單元片材部220相同的材料,並可以成為將邊緣框架部210和遮罩單元片材部220連接成一體的媒介。Then, when the mask
圖7是示出本發明的另一實施例涉及的框架的製造過程的概略圖。圖6的實施例首先製造具備遮罩單元區域CR的遮罩單元片材部220後,黏合於邊緣框架部210,而圖7的實施例將平面狀的片材黏合於邊緣框架部210後形成遮罩單元區域CR部分。7 is a schematic diagram showing a manufacturing process of a frame according to another embodiment of the present invention. The embodiment of FIG. 6 first manufactures the mask
首先,與圖6的(a)相同地提供包括中空區域R的邊緣框架部210。First, the
然後,參照圖7的(a),可以使平面狀的片材(平面狀的遮罩單元片材部220’)與邊緣框架部210對應。遮罩單元片材部220’是還未形成遮罩單元區域CR的平面狀態。在對應的過程中,可以在拉伸F1~F4遮罩單元片材部220’的所有側部以使遮罩單元片材部220’平坦伸展狀態下,使其與邊緣框架部210對應。在一側部也能以多個點(作為圖7的(a)的例,1~3點)夾持單元片材部220’並進行拉伸。另一方面,也可以不是所有側部,而是沿著一部分側部方向,拉伸F1、F2遮罩單元片材部220’。Then, referring to (a) of FIG. 7, a planar sheet (planar mask unit sheet portion 220') may correspond to the
然後,使遮罩單元片材部220’與邊緣框架部210對應時,可以將遮罩單元片材部220’的邊緣部分以焊接W方式進行黏合。優選地,焊接W所有側部,以便遮罩單元片材部220’牢固地黏合於邊緣框架部220。應當最大限度地靠近邊緣框架部210的角部側進行焊接W,才能最大限度地減少邊緣框架部210和遮罩單元片材部220’之間的翹起空間,並提升黏著性。焊接W部分可以以線(line)或者點(spot)形狀生成,與遮罩單元片材部220’具有相同材料,並可以成為將邊緣框架部210和遮罩單元片材部220’連接成一體的媒介。Then, when the mask unit sheet portion 220' corresponds to the
然後,參照圖7的(b),在平面狀的片材(平面狀的遮罩單元片材部220’)上形成遮罩單元區域CR。通過鐳射劃線、蝕刻等去除遮罩單元區域CR部分的片材,從而可以形成遮罩單元區域CR。本說明書中,以形成6×5的遮罩單元區域CR(CR11~CR56)為例進行說明。當形成遮罩單元區域CR時,與邊緣框架部210焊接W的部分成為邊緣片材部221,並且可形成遮罩單元片材部220,該遮罩單元片材部220具備5個第一柵格片材部223以及4個第二柵格片材部225。Then, referring to (b) of FIG. 7, a mask unit region CR is formed on a planar sheet (planar mask unit sheet portion 220'). The sheet of the mask unit region CR is removed by laser scribing, etching, etc., so that the mask unit region CR can be formed. In this specification, an example will be described in which 6×5 mask cell regions CR (CR11 to CR56) are formed. When the mask unit region CR is formed, the portion welded W to the
圖8是示出現有的用於形成高解析度OLED的遮罩的概略圖。8 is a schematic diagram showing a conventional mask for forming a high-resolution OLED.
為實現高解析度的OLED,圖案的尺寸逐漸變小,藉此所使用的遮罩金屬膜的厚度也有必要變薄。如圖8的(a)所示,若要實現高解析度的OLED像素6,則在遮罩10’上縮小像素間距與像素尺寸等(PD->PD')。而且,爲了防止因陰影效應導致的OLED像素6的沉積不均勻,有必要使遮罩10’的圖案傾斜地形成14。然而,具有約30~50㎛的厚度T1,在較厚的遮罩10’上傾斜地形成圖案14的過程中,由於難以進行與細微像素間距PD'與像素尺寸匹配的圖案化13,因此將成為加工工藝中產率變差的原因。換而言之,爲了具有細微的像素間距PD’的同時傾斜地形成圖案14,需要使用較薄厚度的遮罩10’。In order to realize a high-resolution OLED, the size of the pattern gradually becomes smaller, and thus the thickness of the mask metal film used needs to be thinner. As shown in (a) of FIG. 8, if high-
特別是,爲了實現UHD級別的高解析度,如圖8的(b)所示,只有使用約為20㎛以下的厚度T2的較薄的遮罩10’,才能夠進行細微的圖案化。而且,爲了實現UHD以上的超高解析度,可以考慮使用具有10㎛左右厚度T2的較薄的遮罩10’。In particular, in order to achieve high resolution at the UHD level, as shown in FIG. 8(b), only a thin mask 10' with a thickness T2 of about 20 mm or less can be used for fine patterning. Furthermore, in order to achieve ultra-high resolution of UHD or higher, it may be considered to use a thin mask 10' having a thickness T2 of about 10 mm.
圖9是示出本發明的一實施例涉及的以電鑄(electroforming)方式製造遮罩金屬膜100的過程的概略圖。9 is a schematic diagram showing a process of manufacturing the
參照圖9的(a),準備導電性基材21。爲了執行電鑄(electroforming),母板的基材21可以是導電性材料。電鑄時,母板可以作爲陰極(cathode)電極使用。Referring to (a) of FIG. 9, a
作爲導電性材料,金屬可以在表面上生成金屬氧化物,可以在製造金屬過程中流入有雜質,多晶矽基材可以存在夾雜物或者晶界(Grain Boundary),導電性高分子基材含有雜質的可能性高,並且强度、耐酸性等可能脆弱。將諸如金屬氧化物、雜質、夾雜物、晶界等的妨礙在母板(或者陰極)表面均勻形成電場的要素稱爲”缺陷”(Defect)。由於缺陷(Defect),無法對上述材料的陰極施加均勻的電場,有可能導致不均勻地形成部分鍍膜110(遮罩金屬膜110)。As a conductive material, metal can generate metal oxides on the surface, impurities can flow into the metal manufacturing process, polysilicon substrates can contain inclusions or grain boundaries (Grain Boundary), conductive polymer substrates may contain impurities High performance, and may be weak in strength and acid resistance. Elements such as metal oxides, impurities, inclusions, and grain boundaries that hinder the uniform formation of an electric field on the surface of the motherboard (or cathode) are called "defects". Due to defects, a uniform electric field cannot be applied to the cathode of the above-mentioned material, which may result in uneven formation of a part of the plating film 110 (mask metal film 110).
在實現UHD級別以上的超高畫質像素中,鍍膜及鍍膜圖案(遮罩圖案P)的不均勻,有可能對形成像素產生不好的影響。例如,目前QHD畫質的情况爲500~600 PPI(pixel per inch),像素尺寸達到約30~50㎛,4K UHD、8K UHD高畫質的情况具有比前者高的~860 PPI、~1600 PPI等的解析度。直接適用於VR機器上的微顯示器或者插入到VR機器而使用的微顯示器以約2000 PPI以上級別的超高畫質爲目標,像素的尺寸約為5~10㎛。適用於其中的FMM、陰影遮罩的圖案寬度可以形成為數μm至數十μm尺寸,優選小於30μm的尺寸,因此數μm尺寸的缺陷也是在遮罩的圖案尺寸中佔據很大比重程度的尺寸。另外,爲了去除上述材料的陰極的缺陷,可以進行用於去除金屬氧化物、雜質等的附加的工藝,該過程中有可能又引發陰極材料被蝕刻等的其他缺陷。In ultra-high-quality pixels that achieve UHD level or higher, the unevenness of the coating and the coating pattern (mask pattern P) may have a bad influence on the formation of pixels. For example, the current QHD image quality is 500~600 PPI (pixel per inch), the pixel size reaches about 30~50㎛, 4K UHD, 8K UHD high image quality has higher than the former ~860 PPI, ~1600 PPI Resolution. Directly applicable to micro-displays on VR machines or micro-displays used when plugged into VR machines, the ultra-high image quality of about 2000 PPI or higher is targeted, and the pixel size is about 5~10㎛. The pattern width of the FMM and the shadow mask suitable for it can be formed to a size of several μm to several tens of μm, preferably a size smaller than 30 μm. Therefore, defects with a size of several μm also occupy a large proportion of the size of the pattern size of the mask. In addition, in order to remove the defects of the cathode of the above-mentioned material, an additional process for removing metal oxides, impurities, etc. may be performed, in which process other defects such as etching of the cathode material may be caused.
因此,本發明可以使用單晶材料的母板(或者陰極)。特別是,優選為單晶矽材料。可以對單晶矽材料的母板進行1019 /cm3 以上的高濃度摻雜,以便具有導電性。摻雜可以對整個母板進行,也可以僅對母板的表面部分進行。Therefore, the present invention can use a mother substrate (or cathode) of single crystal material. In particular, it is preferably a single crystal silicon material. The mother board of single crystal silicon material can be doped with a high concentration of 10 19 /cm 3 or more in order to have conductivity. The doping may be performed on the entire mother board or only on the surface part of the mother board.
另外,單晶材料可使用Ti、Cu、Ag等金屬;GaN、SiC、GaAs、GaP、AlN、InN、InP、Ge等半導體;石墨(graphite)、石墨烯(graphene)等碳材料;包含CH3 NH3 PbCl3 、CH3 NH3 PbBr3 、CH3 NH3 PbI3 、SrTiO3 等之鈣鈦礦(perovskite)結構等超導電體用單晶陶瓷;飛行器零部件用單晶超耐熱合金等。金屬、碳材料基本上是導電性材料。半導體材料的情况,爲了具有導電性,可執行1019 /cm3 以上的高濃度摻雜。其他材料可藉由執行摻雜或形成氧空位(oxygen vacancy)等,藉以形成導電性。摻雜可對母板的整體進行,亦可僅對母板的表面部分進行。In addition, single crystal materials can use metals such as Ti, Cu, Ag; GaN, SiC, GaAs, GaP, AlN, InN, InP, Ge and other semiconductors; graphite (graphite), graphene (graphene) and other carbon materials; including CH 3 superconductor NH 3 PbCl 3, CH 3 NH 3 PbBr 3, CH 3 NH 3 PbI 3, SrTiO 3 , etc. perovskite (Transition of perovskite) single crystal ceramic structure; aircraft parts and the like with the single crystal superalloy. Metal and carbon materials are basically conductive materials. In the case of semiconductor materials, in order to have conductivity, a high concentration doping of 10 19 /cm 3 or more can be performed. Other materials can form conductivity by performing doping or forming oxygen vacancy. The doping may be performed on the entire mother board or only on the surface part of the mother board.
單晶材料由於沒有缺陷,電鑄時在表面全部形成均勻的電場,因此生成均勻的金屬膜110。通過均勻的金屬膜而製造的框架一體型遮罩100、200可以進一步改善OLED像素的畫質水準。並且,由於無需進行去除、消除缺陷的附加工藝,可降低工藝費用,並提高生産性。Since the single crystal material has no defects, a uniform electric field is formed on the entire surface during electroforming, so a
下面假設使用單晶矽晶圓作為導電性基材21的情況進行說明。The following description assumes that a single crystal silicon wafer is used as the
再次參照圖9的(a),然後,將導電性基材21作爲母板[陰極(Cathode Body)]使用,且使陽極(未圖示)相隔開地佈置,藉以可在導電性基材21上通過電鑄形成金屬膜110[或者鍍膜110]。遮罩金屬膜110可形成於導電性基材21的露出的上表面與側面,該導電性基材21與陽極相對佈置且可作用有電場。不僅是導電性基材21的側面,就連導電性基材21的下表面的一部分上也可以形成有金屬膜110。Referring again to (a) of FIG. 9, the
然後,用鐳射剪切D遮罩金屬膜110的邊緣部分或在遮罩金屬膜110上部形成光阻層,且僅蝕刻並去除D露出的遮罩金屬膜110的一部分。藉此,如圖9的(b)所示,可以從導電性基材21分離遮罩金屬膜110。Then, the edge portion of the D
另外,從導電性基材21分離遮罩金屬膜110之前,可進行熱處理H。本發明的特徵在於,在降低遮罩100的熱膨脹係數的同時為防止遮罩100及遮罩圖案P的熱引起的變形,從導電性基材21[或者母板、陰極]分離遮罩金屬膜110之前進行熱處理H。熱處理可在300℃至800℃的溫度下進行。In addition, before the
通常,相比基於軋延生成的恒範鋼薄板,基於電鑄生成的恒範鋼薄板的熱膨脹係數更高。因此,可藉由對恒範鋼薄板進行熱處理降低熱膨脹係數,但該熱處理過程中恒範鋼薄板會産生剝離、變形等。這是因爲,僅對恒範鋼薄板進行熱處理或對僅在導電性基材21的上表面上臨時黏合的恒範鋼薄板進行熱處理而産生的現象。然而,本發明中,不僅在導電性基材21的上表面而且還在側面與下表面的一部分上形成遮罩金屬膜110,因此即使進行熱處理H也不會發生剝離、變形等。換而言之,由於在導電性基材21與遮罩金屬膜110緊密地黏合的狀態下進行熱處理,因此具有能够防止熱處理引起的剝離、變形等且能夠穩定地進行熱處理之優點。Generally, the thermal expansion coefficient of a constant-fan steel sheet produced by electroforming is higher than that of a constant-fan sheet produced by rolling. Therefore, the thermal expansion coefficient can be reduced by heat treatment of the Hengfan steel sheet, but during the heat treatment, the Hengfan steel sheet will peel off and deform. This is because the heat treatment is performed only on the Hengfan steel sheet or the Hengfan steel sheet temporarily bonded only on the upper surface of the
圖10是示出本發明的一實施例涉及的以軋延(rolling)方式製造遮罩金屬膜100的過程的概略圖。FIG. 10 is a schematic diagram showing a process of manufacturing the
首先,可以準備遮罩金屬膜110。作爲一實施例,可以軋延方式準備遮罩金屬膜110。First, the
參照圖10的(a),可以將基於軋延工藝生成的金屬片材作爲遮罩金屬膜110’使用。基於軋延工藝制得的金屬片材在製造工藝上可具有數十至數百㎛的厚度。如前面所述的圖8中,爲了實現UHD級別的高解析度,只有使用厚度爲約20㎛以下的較薄的遮罩金屬膜110,才能够進行細微的圖案化,爲了實現UHD以上的超高解析度,需要使用厚度為約10㎛的較薄的遮罩金屬膜110。然而,由軋延(rolling)工藝生成的遮罩金屬膜110’具有約25~500㎛的厚度,因此有必要使厚度變為更薄。Referring to (a) of FIG. 10, a metal sheet produced by a rolling process can be used as the mask metal film 110'. The metal sheet produced based on the rolling process may have a thickness of tens to hundreds of mm in the manufacturing process. As shown in FIG. 8 described above, in order to achieve high resolution at UHD level, only thinner
因此,還可以執行使遮罩金屬膜110’的一面平坦化PS的工藝。在此,平坦化PS是指對遮罩金屬膜110’的一面(上面)進行鏡面化的同時去除遮罩金屬膜110’的上部的一部分以使厚度變薄。平坦化PS可藉由CMP(Chemical Mechanical Polishing)方法執行,只要是公知的CMP方法,無需特別限制均可使用。而且,可藉由化學濕蝕刻(chemical wet etching)或者乾蝕刻(dry etching)方法來縮減遮罩金屬膜110’的厚度。除此以外,還可以使用使遮罩金屬膜110’的厚度變薄的可平坦化的其他工藝,對其沒有特別限制。Therefore, a process of flattening PS on one side of the mask metal film 110' can also be performed. Here, the flattening PS means mirroring one side (upper surface) of the mask metal film 110' and removing a part of the upper part of the mask metal film 110' to reduce the thickness. The flattening PS can be performed by a CMP (Chemical Mechanical Polishing) method, and as long as it is a well-known CMP method, it can be used without particular limitation. Furthermore, the thickness of the mask metal film 110' can be reduced by chemical wet etching or dry etching methods. In addition to this, other processes that can make the thickness of the mask metal film 110' thinner and flattenable can also be used, and there is no particular limitation.
在執行平坦化PS的過程中,作爲一列,在CMP過程中,可控制遮罩金屬膜110’的上表面的表面粗糙度Ra。優選地,可進行使表面粗糙度進一步下降的鏡面化。或者,作爲其他例子,基於化學濕蝕刻或者乾蝕刻過程進行平坦化PS之後,可追加進行個別的CMP工藝等的拋光工藝,藉以减少表面粗糙度Ra。In the process of performing the flattening of PS, as a row, during the CMP process, the surface roughness Ra of the upper surface of the mask metal film 110' can be controlled. Preferably, the mirror surface can be further reduced in surface roughness. Or, as another example, after planarizing the PS based on the chemical wet etching or dry etching process, a polishing process such as an individual CMP process may be additionally performed to reduce the surface roughness Ra.
如此,可以使遮罩金屬膜110’的厚度減少至約50㎛以下。藉此,遮罩金屬膜110的厚度優選為約2㎛至50㎛,更優選地,厚度可以為約5㎛至20㎛。然而,並非局限於此。In this way, the thickness of the mask metal film 110' can be reduced to about 50 mm or less. By this, the thickness of the
參照圖10的(b),其與圖10的(a)相同,可藉由减少基於軋延工藝製造的遮罩金屬膜110’的厚度,以製造遮罩金屬膜110。惟,遮罩金屬膜110’是在藉由後面所述的模板50上夾設臨時黏合部55而被黏合的狀態下,執行平坦化PS工藝以縮減厚度。Referring to FIG. 10(b), which is the same as FIG. 10(a), the
圖11至圖12是示出本發明的一實施例涉及的將遮罩金屬膜110黏合於模板50上並形成遮罩100以製造遮罩支撑模板的過程的概略圖。11 to 12 are schematic diagrams showing a process of bonding the
參照圖11的(a),可提供模板50(template)。模板50是以使遮罩100附著並支撑於模板50的一面的狀態移動之媒介。模板50的一面優選爲平坦形狀,以支撑平坦的遮罩100並使其移動。中心部50a與遮罩金屬膜110的遮罩單元C對應,邊緣部50b可以與遮罩金屬膜110的虛設部DM對應。模板50可以是尺寸大於遮罩金屬膜110之大平板形狀,以使遮罩金屬膜110整體上得到支撐。Referring to (a) of FIG. 11, a template 50 (template) may be provided. The
模板50優選由透明的材料構成,藉以在將遮罩100與框架200對準且黏合的過程以便於觀測視覺(vision)等。而且,若是透明的材料,則還可以使鐳射貫穿。作爲透明的材料,可以使用玻璃(glass)、氧化矽(silica)、耐熱玻璃、石英(quartz)、氧化鋁(Al2
O3
)、硼矽酸玻璃(borosilicate glass)、氧化鋯(zirconia)等材料。作爲一例,模板50可以使用硼矽酸玻璃中具有優秀的耐熱性、化學耐久性、機械强度、透明性等的BOROFLOAT®
33材料。而且,BOROFLOAT®
33的熱膨脹係數約為3.3,與恆範鋼遮罩金屬膜110的熱膨脹係數差异少,具有便於控制遮罩金屬膜110的優點。The
另外,模板50與遮罩金屬膜110接觸的一面可以是鏡面,以使與遮罩金屬膜110[或者遮罩100]之間的界面之間不産生空隙(air gap)。基於此,模板50的一面的表面粗糙度Ra可以為100nm以下。爲了實現表面粗糙度Ra為100nm以下的模板50,模板50可以使用晶圓(wafer)。晶圓(wafer)的表面粗糙度Ra約為10nm,且市面上的産品較多,表面處理工藝已被習知,故可作爲模板50使用。模板50的表面粗糙度Ra是nm級,因此不存在空隙AG或空隙AG幾乎不存在,容易基於鐳射焊接生成焊接焊珠WB,故對遮罩圖案P的對準誤差不產生影響。In addition, the side of the
模板50上可形成有鐳射貫穿孔51,以使從模板50的上部照射的鐳射L到達遮罩100的焊接部(執行焊接的區域)。鐳射貫穿孔51可與焊接部的位置及個數對應地形成於模板50上。焊接部可以規定的間隔在遮罩100的邊緣或虛擬部DM[參照圖12的(e)]的部分上佈置多個,因此鐳射貫穿孔51亦可以與其對應且相隔規定間隔地形成多個。作爲一例,焊接部在遮罩100的兩側(左側/右側)虛擬部DM的部分以規定間隔佈置多個,因此鐳射貫穿孔51亦可以在模板50的兩側(左側/右側)以規定間隔形成多個。The
鐳射貫穿孔51並非一定與焊接部的位置及個數對應。例如,亦可以僅對鐳射貫穿孔51中的一部分照射鐳射L以進行焊接。另外,不與焊接部對應的鐳射貫穿孔51中的一部分在對準遮罩100與模板50時亦可代替對準標記而使用。若模板50的材料對鐳射L光透明,則亦可以不形成鐳射貫穿孔51。The laser through
模板50的一面上可形成有臨時黏合部55。臨時黏合部55可於模板50的一整個面上形成。遮罩100[遮罩金屬膜110]可於整個臨時黏合部55上黏合。在遮罩100黏合於框架200之前,臨時黏合部55使遮罩100[或者遮罩金屬膜110]臨時黏合於模板50的一面並支撐在模板50上。The
臨時黏合部55可使用基於加熱可分離的黏合劑或者黏合片材,基於照射UV可分離的黏合劑或者黏合片材。The temporary
作爲一例,臨時黏合部55可使用液態蠟(liquid wax)。液態蠟可以使用與在半導體晶圓拋光步驟等中使用的蠟相同的蠟,其種類沒有特別限制。液態蠟主要包含作爲用於控制與維持力有關的黏著力、耐衝擊性等的樹脂成份的丙烯酸、醋酸乙烯酯、尼龍及各種聚合物等物質及溶劑。作爲一例,臨時黏合部55作爲樹脂成份可使用丙烯腈-丁二烯橡膠(ABR,Acrylonitrile butadiene rubber)且作為溶劑成份可使用含有n-丙醇的SKYLIQUID ABR-4016。液態蠟可使用旋轉塗布形成於臨時黏合部55上。As an example, liquid wax can be used for the
作爲液態蠟的臨時黏合部55在高於85℃~100℃的溫度下其黏性變低,而在低於85℃的溫度下黏性變大,一部分像固體一樣變硬,且可以使遮罩金屬膜110與模板50固定並黏合。The
然後,參照圖11的(b),可以使遮罩金屬膜110’黏合於模板50上。將液態蠟加熱到85℃以上且使遮罩金屬膜110’接觸模板50之後,使遮罩金屬膜110’與模板50通過輥子之間以進行黏合。Then, referring to (b) of FIG. 11, the mask metal film 110' can be adhered to the
根據一實施例,在約120℃的溫度下對模板50烘焙(baking)60秒,使臨時黏合部55的溶劑氣化,並直接進行遮罩金屬膜的層壓(lamination)工藝。層壓可藉由在一面形成有臨時黏合部55的模板50上裝載遮罩金屬膜110’,並將其通過約100℃的上部輥(roll)與約0℃的下部輥之間來執行。其結果,遮罩金屬膜110’可藉由在模板50上夾設臨時黏合部55而接觸。According to an embodiment, the
圖13是示出本發明的一實施例涉及的臨時黏合部55的放大截面的概略圖。作爲又一例,臨時黏合部55可使用熱分離膠帶(thermal release tape)。熱分離膠帶是中間佈置有PET膜等的基膜56,基膜56的兩面佈置有可熱分離的黏著層57a、57b(thermal release adhesive),而黏著層57a、57b的外廓可佈置有分離膜/離型膜58a、58b。其中,基膜56的兩面上佈置的黏著層57a、57b的分離溫度可相互不同。13 is a schematic view showing an enlarged cross-section of the
根據一實施例,在去除分離膜/離型膜58a、58b的狀態下,熱分離膠帶的下表面[第二黏著層57b]黏合於模板50上,熱分離膠帶的上表面[第一黏著層57a]可黏合於遮罩金屬膜110’上。第一黏著層57a與第二黏著層57b的分離溫度互不相同,因此在後面所述的圖18中,從遮罩100分離模板50時,隨著對第一黏著層57a加熱,遮罩100可從模板50及臨時黏合部55分離出來。According to an embodiment, in a state where the separation film/
接著,進一步參照圖11的(b),可以使遮罩金屬膜110’的一面平坦化PS。如上所述,圖10中由軋延工藝制得之遮罩金屬膜110’可藉由平坦化PS工藝縮減其厚度(110'->110)。而且,由電鑄工藝制得之遮罩金屬膜110也可以進行平坦化PS工藝,藉以控制其表面特性、厚度。Next, referring further to FIG. 11(b), one side of the mask metal film 110' can be flattened PS. As described above, the mask metal film 110' made by the rolling process in FIG. 10 can be reduced in thickness (110'->110) by the planarizing PS process. Moreover, the
藉此,如圖11的(c)所示,隨著遮罩金屬膜110’的厚度縮減(110'->110),遮罩金屬膜110的厚度變為約5㎛至20㎛。Thereby, as shown in FIG. 11(c), as the thickness of the mask metal film 110' decreases (110'->110), the thickness of the
另外,遮罩金屬膜110以電鑄方式生成時,可省略圖11的(b)的平坦化PS步驟,而可以直接進行在模板50黏合遮罩金屬膜110的過程並形成圖11的(c)的形態。In addition, when the
然後,參照圖12的(d),可以在遮罩金屬膜110上形成圖案化的絕緣部25。絕緣部25可利用印刷法等由光阻材料形成。Then, referring to (d) of FIG. 12, a patterned insulating
接著,可進行遮罩金屬膜110的蝕刻。可使用幹蝕刻、濕蝕刻等方法,對該方法沒有特別限制,蝕刻結果,在絕緣部25之間的空位置26上露出的遮罩金屬膜110部分被蝕刻。遮罩金屬膜110的被蝕刻部分構成遮罩圖案P,藉以可製造形成有多個遮罩圖案P的遮罩100。Next, the
然後,參照圖12的(e),藉由去除絕緣部25,可完成支撐遮罩100的模板50的製造。遮罩100可包括形成有多個遮罩圖案P的遮罩單元C及遮罩單元C周邊之虛設部DM。虛設部DM對應於除了單元C以外的遮罩膜110[遮罩金屬膜110]部分,可以只包括遮罩膜110或可包括形成有與遮罩圖案P相似形態的預定的虛設部圖案的遮罩膜110。虛設部DM與遮罩100的邊緣對應,因此虛設部DM的一部分或者全部可黏合於框架200[遮罩單元片材部220]上。Then, referring to FIG. 12(e), by removing the insulating
遮罩圖案P的寬度可以小於40μm,遮罩100的厚度可以約為2~50μm。The width of the mask pattern P may be less than 40 μm, and the thickness of the
由於框架200具備多個遮罩單元區域CR(CR11~CR56),因此也可以形成多個具有與各個遮罩單元區域CR(CR11~CR56)分別對應的遮罩單元C(C11~56)的遮罩100。而且,可具備分別支撐多個遮罩100的多個模板50。Since the
圖14是示出本發明的一實施例涉及的將遮罩支撑模板裝載於框架上的過程的概略圖。14 is a schematic diagram showing a process of loading a mask support template on a frame according to an embodiment of the present invention.
參照圖14,可藉由真空吸盤90移送模板50。用真空吸盤90吸附黏合有遮罩100的模板50的面的相反面並進行移送。真空吸盤90可以與向x、y、z、θ軸移動的移動手段(未圖示)連接。而且,真空吸盤90可吸附模板50並與能够進行翻轉(flip)的翻轉手段(未圖示)連接。如圖14的(b)所示,真空吸盤90即使在吸附模板50並使其翻轉之後向框架200移送的過程中,也不會影響遮罩100的黏合狀態與對準狀態。Referring to FIG. 14, the
圖15是示出本發明一實施例涉及的將模板裝載於框架上以使遮罩與框架的單元區域對應的狀態的概略圖。圖16是示出本發明的一實施例涉及的藉由吸附孔229向遮罩施加吸附力VS的狀態的概略圖。圖17是示出本發明的一實施例涉及的形成有多個吸附孔229的框架200的部分概略圖。圖15雖示出將一個遮罩100與單元區域CR對應/黏合的例子,但也可以進行將多個遮罩100同時與所有單元區域CR分別對應,以使遮罩100黏合於框架200上的過程。此時,可具有用於分別支撐多個遮罩100的多個模板50。此外,圖16雖示出第一柵格片材部223上形成吸附孔229藉以施加吸附力VS的形態,但是,當然也可以是邊緣片材部221上形成吸附孔229,並在邊緣片材部221與邊緣框架部210之間形成預定的段差,藉以向邊緣片材部221的吸附孔229施加吸附力VS。15 is a schematic diagram showing a state in which a template is mounted on a frame so that a mask corresponds to a unit area of the frame according to an embodiment of the present invention. FIG. 16 is a schematic diagram showing a state in which the suction force VS is applied to the mask through the
然後,參照圖15,可以使遮罩100與框架200的一個遮罩單元區域CR對應。可藉由將模板50裝載於框架200[或者遮罩單元片材部220]上,實現遮罩100與遮罩單元區域CR的對應。控制模板50/真空吸盤90的位置的同時通過顯微鏡觀察遮罩100是否與遮罩單元區域CR對應。由於模板50擠壓遮罩100,因此遮罩100與框架200可緊密地抵接。Then, referring to FIG. 15, the
另外,本發明的特徵在於,遮罩100與框架200的界面之間不產生空隙,為了使它們更加緊密地接觸,除了模板50的荷重以外還利用吸附力VS。作為施加吸附力VS或者吸壓的路徑,框架200上可形成有多個吸附孔229。In addition, the present invention is characterized in that no gaps are generated between the interface of the
參照圖15至圖17,多個吸附孔229可形成於具有遮罩單元區域CR的框架200之角部附近。具體而言,與遮罩單元片材部220的角部相隔預定距離之部分可形成多個吸附孔229,更具體而言,可形成於與邊緣片材部221的內側角部相隔預定距離之部分以及第一、第二柵格片材部223、225的角部相隔預定距離之部分上。15 to 17, a plurality of suction holes 229 may be formed near the corner of the
多個吸附孔229的形態、尺寸等只要在能夠作用真空吸壓的範圍內,對其沒有特別限制。惟,多個吸附孔229的位置最好不與遮罩100的焊接部(待焊接區域)重疊。若焊接部與吸附孔229重疊,則遮罩100與框架200[或者遮罩單元片材部220]將不能緊密地接觸,故不能順利地生成藉由鐳射焊接的焊接焊珠WB。優選地,多個吸附孔229形成於與焊接部靠近的部分,藉以使遮罩100的焊接部部分與框架200[或者遮罩單元片材部220]更加密接。The shape, size, etc. of the plurality of suction holes 229 are not particularly limited as long as they are within a range where vacuum suction pressure can be applied. However, it is preferable that the positions of the plurality of suction holes 229 do not overlap with the welding portion (the area to be welded) of the
如圖16所示,若將模板50裝載於框架200[或者遮罩單元片材部220]上,則遮罩100的下部表面的一部分與框架200[或者遮罩單元片材部220]的上部抵接。框架200[或者遮罩單元片材部220]上形成的吸附孔229的上部與遮罩100的下部表面對應,且與吸附孔229的下部對應的吸附力(吸壓)施加手段藉由吸附孔229把吸附力VS[或者吸壓VS]施加到遮罩100上,藉以拉拽與吸附孔229對應的遮罩100部分。藉此,遮罩100將與框架200更加密接,故進行鐳射焊接時,能夠使焊接焊珠WB更加穩定地生成。As shown in FIG. 16, if the
吸附力(吸壓)施加手段可使用在吸附孔229進行真空吸附之公知的裝置。惟,以下實施例中對包含有吸附部75的下部支撐體70進行說明。As the means for applying the suction force (suction pressure), a known device that performs vacuum suction in the
參照圖15及圖16,亦可以在框架200下部佈置下部支撑體70。下部支撐體70可佈置於作為執行遮罩100與框架200之黏合工藝的載置台的台部(未圖示)上面,且支撐框架200的下部。下部支撐體70可佈置於框架200的下部,使遮罩100黏合於框架200上的工藝進行期間,為固定連接於框架200上,下部支撐體70可佈置於框架200的下部。下部支撐體70可具有板狀,藉以支撐框架200,其尺寸可以小於或等於框架200的面積。或者,下部支撐體70可具有能夠進入框架邊緣部210的中空區域R內部的尺寸且具有平板形狀。考慮到熱膨脹係數,下部支撐體70優選使用與框架200相同的材料,但亦可以使用剛性高的材料。而且,下部支撑體70的上面亦可形成有與遮罩單元片材部220的形狀對應的規定支撐槽(未圖示)。此時,邊緣片材部221、第一柵格片材部223及第二柵格片材部225插入支撐槽內,藉以使遮罩單元片材部220更好地固定。Referring to FIGS. 15 and 16, a
下部支撐體70的上部可形成有吸附部75。吸附部75優選地佈置為與框架200[或者遮罩單元片材部220]上形成的吸附孔229的位置對應。換而言之,吸附部75可佈置於在下部支撐體70上向吸附孔229集中地施加吸附力VS[或者吸壓VS]的位置上。吸附部75可使用公知的可真空吸附裝置,且可以與外部的吸壓發生裝置連接。作為一例,下部支撐體70的內部形成有真空通道76,且另一端與泵等的外部吸壓發生裝置(未圖示)連接,而一端與吸附部75連接。與真空通道76連接的吸附部75的上部表面形成有多個孔、槽等,可作為施加吸壓的通道使用。外部的吸壓發生裝置與下部支撐體70的多個真空通道76連接,藉以可分別控制對各真空通道76的吸壓,而且還可以同時控制對所有真空通道76的吸壓。An
下部支撑體70可擠壓與遮罩100接觸的遮罩單元區域CR的相反面。即,下部支撑體70沿上部方向支撑遮罩單元片材部220,藉以防止遮罩100的黏合過程中遮罩單元片材部220向下部下垂。與此同時,下部支撑體70與模板50以相互相反的方向擠壓遮罩100的邊緣及框架200[或者遮罩單元片材部220],故不會破壞遮罩100的對準狀態並使其保持對準。The
進一步而言,從下部支撐體70的吸附部75提供吸附力VS[或者吸壓VS],隨著該吸附力VS經吸附孔229施加到遮罩100上,遮罩100將被拉拽到吸附部75側(下部側)。這樣一來,遮罩100與框架200[或遮罩單元片材部220]的界面會緊密地抵接。Further, the suction force VS [or suction pressure VS] is supplied from the
由於吸附部75強烈的拉拽遮罩100,因而遮罩100與框架200的界面之間不存在細微的空隙。其結果,由於遮罩100與框架200[在圖16的放大圖中,第一柵格片材部223]密接,因而即使在焊接部的任何位置照射镭射L,遮罩100與框架200之间也會容易生成焊接焊珠WB。焊接焊珠WB使遮罩100與框架200連接成一體,結果具有使焊接穩定地進行之優點。Since the
另外,由於僅藉由模板50上附著遮罩100且將模板50裝載於框架200上就可以完成使遮罩100與框架200的遮罩單元區域CR對應的過程,因而此過程對遮罩100可以不施加任何拉伸力。In addition, since the process of matching the
施加吸附部75的吸附力VS之後,接著向遮罩100照射鐳射L,以使遮罩100藉由鐳射焊接黏合於框架200。被鐳射焊接的遮罩的焊接部部分生成焊接焊珠WB,焊接焊珠WB可具有與遮罩100/框架200相同的材料且與遮罩100/框架200連接成一體。After the suction force VS of the
圖18是示出本發明的一實施例涉及的將遮罩100黏合於框架200上之後分離遮罩100與模板50的過程的概略圖。18 is a schematic diagram showing a process of separating the
參照圖18,在使遮罩100黏合於框架200之後,可分離(debonding)遮罩100與模板50。遮罩100與模板50之間的分離可藉由對臨時黏合部55進行加熱ET、化學處理CM、施加超聲波US、施加UV中的至少一個來實現。由於遮罩100保持與框架200黏合的狀態,因此可以只抬起模板50。作為一例,若施加比85℃~100℃高的熱ET,則臨時黏合部55的黏性下降,且遮罩100與模板50的黏著力邊弱,故可以分離遮罩100與模板50。作爲其他例子,將臨時黏合部55浸漬CM於IPA、丙酮、乙醇等化學物質中,藉以由溶解、去除臨時黏合部55等方式分離遮罩100與模板50。作爲又一例,若施加超聲波US或施加UVUV,則遮罩100與模板50間的黏著力變弱,故可使遮罩100與模板50分離。Referring to FIG. 18, after the
進一步而言,由於使遮罩100與模板50黏合的臨時黏合部55是TBDB黏合材料(temporary bonding & debonding adhesive),故可以使用各種分離(debonding)方法。Further, since the
作為一例,可使用基於化學處理CM的溶劑剝離(Solvent Debonding)方法。藉由溶劑(solvent)的滲透導致臨時黏合部55溶解以實現剝離。此時,由於遮罩100上形成有圖案P,因此溶劑將通過遮罩圖案P及遮罩100與模板50間的界面進行滲透。溶劑剝離可在常溫(room temperature)下進行且無需其他的複雜剝離設備,故相比於其他剝離方法具有經濟性。As an example, a Solvent Debonding method based on chemical treatment CM can be used. The penetration of the solvent causes the temporary
作為又一例,可使用基於加熱ET的熱剝離(Heat Debonding)方法。用高溫的熱誘導臨時黏合部55的分解,若遮罩100與模板50間的黏著力變小,可向上下方向或者左右方向進行剝離。As yet another example, a heat debonding method based on heated ET may be used. The high-temperature heat induces the decomposition of the
作為又一例,可使用基於加熱ET、施加UVUV等的剝離黏合劑之剝離(Peelable Adhesive Debonding)方法。若臨時黏合部55是熱分離膠帶,則可藉由剝離黏合劑之剝離方法進行剝離,該方法與熱剝離方法相同,無需高溫的熱處理及昂貴的熱處理設備且工藝相對簡單。As yet another example, a peeling (Peelable Adhesive Debonding) method based on a peeling adhesive by heating ET, applying UVUV, or the like can be used. If the temporary
作為又一例,可以使用基於化學處理CM、施加超聲波US、施加UVUV等的常溫剝離(Room Temperature Debonding)方法。若對遮罩100或者模板50的一部分(中心部)進行non-sticky處理,則只有邊緣部分藉由臨時黏合部55被黏合。另外,剝離時邊緣部分上有溶劑滲透,因此可藉由臨時黏合部55的溶解實現剝離。該方法具有以下優點:在進行黏合與剝離的過程中,除了遮罩100、模板50的邊緣區域以外的剩餘部分不會發生直接損傷或者剝離時由於黏合材料殘渣(residue)引起的缺陷等。而且,該方法與熱剝離方法不同,由於剝離時無需進行高溫的熱處理過程,故具有能够相對地减少工藝費用的優點。As yet another example, a room temperature debonding method based on chemical treatment CM, application of ultrasonic waves US, application of UVUV, etc. may be used. If a part (center part) of the
圖19是示出本發明的一實施例涉及的將遮罩100黏合於框架200上的狀態的概略圖。FIG. 19 is a schematic diagram showing a state where the
參照圖19,一個遮罩100可黏合於框架200的一個單元區域CR上。Referring to FIG. 19, a
由於框架200的遮罩單元片材部220具有薄的厚度,在對遮罩100施加拉伸力的狀態下,黏合於遮罩單元片材部220時,遮罩100中殘存的拉伸力作用於遮罩單元片材部220以及遮罩單元區域CR,也有可能使它們變形。因此,應該在對遮罩100不施加拉伸力的狀態下,將遮罩100黏合於遮罩單元片材部220。本發明僅藉由在模板50上附著遮罩100且將模板50裝載於框架200上就可以完成使遮罩100與框架200的遮罩單元區域CR對應的過程,此過程對遮罩100不施加任何拉伸力。由此,可以防止因施加到遮罩100的拉伸力作為張力(tension)反向作用於框架200而導致框架200(或者遮罩單元片材部220)變形。Since the mask
現有的圖1的遮罩10包括6個單元C1~C6,因此具有較長的長度,而本發明的遮罩100包括一個單元C,因此具有較短的長度,因此PPA(pixel position accuracy)扭曲的程度會變小。假設包括多個單元C1~C6、…的遮罩10的長度為1m,並且在1m的總長度中發生10μm的PPA誤差,則本發明的遮罩100可以隨著相對長度減小(相當於單元C數量減少)而使上述誤差範圍1/n。例如,本發明的遮罩100長度為100mm,則具有從現有的遮罩10的1m減小為1/10的長度,因此在100mm的總長度中發生1μm的PPA誤差,使對準誤差顯著下降。The existing
另一方面,遮罩100具備多個單元C,若即使各個單元C與框架200的各個單元區域CR對應,對準誤差仍處於最小化範圍內,則遮罩100也可以與框架200的多個遮罩單元區域CR對應。或者,具有多個單元C的遮罩100也可以與一個遮罩單元區域CR對應。在這種情况下,考慮到基於對準的工藝時間和生産性,遮罩100優選具備盡可能少量的單元C。On the other hand, the
就本發明而言,由於只需匹配遮罩100的一個單元C並確認對準狀態即可,因此與同時匹配多個單元C(C1~C6)並需要確認全部對準狀態的現有方法相比,可以顯著縮短製造時間。As far as the present invention is concerned, it is only necessary to match one unit C of the
即,本發明的框架一體型遮罩的製造方法與現有方法相比,能夠明顯縮短時間,該現有方法通過使包含於6個遮罩100的各個單元C11~C16分別與一個單元區域CR11~CR16對應並確認各個對準狀態的6次過程,同時匹配6個單元C1~C6,並且需要同時確認6個單元C1~C6的對準狀態。That is, the manufacturing method of the frame-integrated mask of the present invention can significantly shorten the time compared with the conventional method. In the conventional method, the cells C11 to C16 included in the six
另外,在本發明的框架一體型遮罩的製造方法中,使30個遮罩100分別與30個單元區域CR(CR11~CR56)對應並對準30次的過程中的產品產率,會明顯高於使分別包括6個單元C1~C6的5個遮罩10(參照圖2的(a))與框架20對應並對準5次過程中的現有產品的產率。由於在每次對應於6個單元C的區域中對準6個單元C1~C6的現有方法是明顯繁瑣、困難的作業,因此産品産率低。In addition, in the manufacturing method of the frame-integrated mask of the present invention, the product yield in the process of aligning 30
另外,在圖11的(b)步驟中,如上所述,藉由層壓工藝將遮罩金屬膜110黏合於模板50上時,遮罩金屬膜110上會施加有約100℃的溫度。基於此,遮罩金屬膜110在施加有一部分拉伸力的狀態下黏合於模板50上。之後,遮罩100黏合與框架200上,若遮罩100與模板50分離,則遮罩100將會收縮預定程度。In addition, in step (b) of FIG. 11, as described above, when the
當個遮罩100分別黏合於與其對應的遮罩單元區域CR之後,使模板50與遮罩100分離時,多個遮罩100施加向相反方向收縮的張力,故該力被抵銷,因此在遮罩單元片材部220不發生變形。例如,在附著於CR11單元區域的遮罩100與附著於CR12單元區域的遮罩100之間的第一柵格片材部223中,向附著於CR11單元區域的遮罩100的右側方向作用的張力與向附著於CR12單元區域的遮罩100的左側方向作用的張力相互抵消。由此,最大限度地降低基於張力的框架200[或者遮罩單元片材部220]變形,從而能夠最大限度地降低遮罩100[或者遮罩圖案P]的對準誤差。When each
圖20是示出本發明之一實施例涉及之利用框架一體型遮罩100、200的OLED像素沉積裝置1000的概略圖。FIG. 20 is a schematic diagram showing an OLED
參照圖20,OLED像素沉積裝置1000包括:磁板300,其容納有磁體310,並且排布有冷却水管350;沉積源供給部500,其從磁板300的下部供給有機物源600。Referring to FIG. 20, the OLED
磁板300與沉積源供給部500之間可以插入有用於沉積有機物源600的玻璃等目標基板900。目標基板900上可以以緊貼或非常接近的方式配置有使有機物源600按不同像素沉積的框架一體型遮罩100、200[或者FMM]。磁體310可以産生磁場,並藉由磁場緊貼到目標基板900上。A
沉積源供給部500可以往返左右路徑並供給有機物源600,由沉積源供給部500供給的有機物源600可以通過形成於框架一體型遮罩100、200的圖案P並沉積於目標基板900的一側。通過框架一體型遮罩100、200的圖案P後之被沉積的有機物源600,可以用作OLED的像素700。The deposition
爲了防止由於陰影效應(Shadow Effect)發生的像素700的不均勻沉積,框架一體型遮罩100、200的圖案可以傾斜地形成S[或者以錐形S形成]。沿著傾斜表面,在對角線方向上通過圖案的有機物源600,也可以有助於像素700的形成,因此,能够整體上厚度均勻地沉積像素700。In order to prevent uneven deposition of the
在高於像素沉積工藝溫度的第一溫度下,遮罩100黏合固定於框架200上,因此即使提升至用於沉積像素工藝的溫度,也對遮罩圖案P的位置幾乎不構成影響,遮罩100和相鄰的遮罩100之間的PPA能夠保持為不超過3μm。At a first temperature higher than the temperature of the pixel deposition process, the
如上所述,本發明列舉了優選實施例進行圖示和說明,但是不限於上述實施例,在不脫離本發明的精神的範圍內,該技術領域中具有通常知識者能够進行各種變形和變更。這種變形及變更均落在本發明和所附的申請專利範圍的範圍內。As described above, the present invention lists preferred embodiments for illustration and description, but it is not limited to the above-mentioned embodiments, and various modifications and changes can be made by those having ordinary knowledge in the technical field without departing from the spirit of the present invention. Such modifications and changes fall within the scope of the present invention and the attached patent application.
6:像素
10:條式遮罩
10’:遮罩
11:遮罩膜
13:圖案化
14:圖案
20:框架
21:導電性基材
26:空位置
50:模板
50a:中心部
50b:邊緣部
51:鐳射貫穿孔
55:臨時黏合部
56:基膜
57a、57b:黏著層
58a、58b:分離膜/離型膜
70:下部支撐體
75:吸附部
76:真空通道
90:真空吸盤
100:遮罩
110:遮罩膜
110’:遮罩金屬膜
200:框架
210:邊緣框架部
220、220’:遮罩單元片材部
221:邊緣片材部
223:第一柵格片材部
225:第二柵格片材部
229:吸附孔
300:磁板
310:有磁體
350:冷却水管
500:沉積源供給部
600:有機物源
700:像素
900:目標基板
1000:OLED像素沉積裝置
AG:空隙
C:單元、遮罩單元
C1~C6:單元
CM:化學處理
CR(CR11~CR56):遮罩單元區域
DM:虛設部、遮罩虛設部
D1~D1''、D2~D2'':距離
D:鐳射剪切
ET:加熱
F1~F2:拉伸
H:熱處理
L:鐳射
R:邊緣框架部的中空區域
Ra:表面粗糙度
P:遮罩圖案
PS:平坦化
PD:縮小像素間距
PD':像素間距
VS:施加吸附力、吸壓
US:施加超聲波
UV:施加UV
W:焊接
WB:焊接焊珠
S:傾斜地形成;錐形
T1、T2:厚度6: pixels
10: Strip mask
10’: Mask
11: Mask film
13: Patterning
14: Pattern
20: Frame
21: conductive substrate
26: empty position
50:
圖1是示出現有的OLED像素沉積用遮罩的概略圖。FIG. 1 is a schematic diagram showing a conventional mask for OLED pixel deposition.
圖2是示出現有的將遮罩黏合到框架的過程的概略圖。FIG. 2 is a schematic diagram showing a conventional process of bonding a mask to a frame.
圖3是示出在現有的拉伸遮罩的過程中,發生單元之間的對準誤差的概略圖。FIG. 3 is a schematic diagram showing that an alignment error between cells occurs during a conventional stretching mask.
圖4是示出本發明的一實施例涉及的框架一體型遮罩的主視圖及側截面圖。4 is a front view and a side cross-sectional view showing a frame-integrated mask according to an embodiment of the present invention.
圖5是示出本發明的一實施例涉及的框架的主視圖及側截面圖。5 is a front view and a side cross-sectional view showing a frame according to an embodiment of the present invention.
圖6是示出本發明的一實施例涉及的框架的製造過程的概略圖。6 is a schematic diagram showing a manufacturing process of a frame according to an embodiment of the present invention.
圖7是示出本發明的另一實施例涉及的框架的製造過程的概略圖。7 is a schematic diagram showing a manufacturing process of a frame according to another embodiment of the present invention.
圖8是示出現有的用於形成高解析度OLED的遮罩的概略圖。8 is a schematic diagram showing a conventional mask for forming a high-resolution OLED.
圖9是示出本發明的一實施例涉及的以電鑄(electroforming)方式製造遮罩金屬膜的過程的概略圖。9 is a schematic diagram showing a process of manufacturing a mask metal film by electroforming according to an embodiment of the present invention.
圖10是示出本發明的一實施例涉及的以軋延(rolling)方式製造遮罩金屬膜的過程的概略圖。10 is a schematic diagram showing a process of manufacturing a mask metal film by rolling according to an embodiment of the present invention.
圖11至圖12是示出本發明的一實施例涉及的將遮罩金屬膜黏合於模板上並形成遮罩以製造遮罩支撑模板的過程的概略圖。11 to 12 are schematic diagrams showing a process of bonding a mask metal film to a template and forming a mask to manufacture a mask support template according to an embodiment of the present invention.
圖13是示出本發明的一實施例涉及的臨時黏合部的放大截面的概略圖。13 is a schematic view showing an enlarged cross-section of a temporary bonding portion according to an embodiment of the present invention.
圖14是示出本發明的一實施例涉及的將遮罩支撑模板裝載於框架上的過程的概略圖。14 is a schematic diagram showing a process of loading a mask support template on a frame according to an embodiment of the present invention.
圖15是示出本發明一實施例涉及的將模板裝載於框架上以使遮罩與框架的單元區域對應的狀態的概略圖。15 is a schematic diagram showing a state in which a template is mounted on a frame so that a mask corresponds to a unit area of the frame according to an embodiment of the present invention.
圖16是示出本發明的一實施例涉及的藉由吸附孔向遮罩施加吸附力的狀態的概略圖。16 is a schematic diagram showing a state in which a suction force is applied to a mask through a suction hole according to an embodiment of the present invention.
圖17是示出本發明的一實施例涉及的形成有多個吸附孔的框架的部分概略圖。17 is a partial schematic diagram showing a frame in which a plurality of suction holes are formed according to an embodiment of the present invention.
圖18是示出本發明的一實施例涉及的將遮罩黏合於框架上之後分離遮罩與模板的過程的概略圖。18 is a schematic diagram showing a process of separating a mask and a template after bonding the mask to the frame according to an embodiment of the present invention.
圖19是示出本發明的一實施例涉及的將遮罩黏合於框架上的狀態的概略圖。FIG. 19 is a schematic diagram showing a state in which a mask is adhered to a frame according to an embodiment of the present invention.
圖20是示出本發明的一實施例涉及的利用框架一體型遮罩的OLED像素沉積裝置的概略圖。20 is a schematic diagram showing an OLED pixel deposition apparatus using a frame-integrated mask according to an embodiment of the present invention.
50:模板 50: template
51:鐳射貫穿孔 51: Laser through hole
55:臨時黏合部 55: Temporary bonding section
70:下部支撐體 70: lower support
75:吸附部 75: Adsorption section
76:真空通道 76: vacuum channel
90:目標基板 90: target substrate
100:遮罩 100: mask
223:第一柵格片材部 223: First grid sheet section
229:吸附孔 229: Adsorption hole
VS:施加吸附力、吸壓 VS: apply suction force, suction pressure
WB:焊接焊珠 WB: Welding welding beads
L:鐳射 L: Laser
Claims (20)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020180095609A KR101986527B1 (en) | 2018-08-16 | 2018-08-16 | Producing method of mask integrated frame and frame |
KR10-2018-0095609 | 2018-08-16 | ||
KR1020190016248A KR102188948B1 (en) | 2019-02-12 | 2019-02-12 | Producing method of mask integrated frame |
KR10-2019-0016248 | 2019-02-12 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW202013447A true TW202013447A (en) | 2020-04-01 |
TWI825149B TWI825149B (en) | 2023-12-11 |
Family
ID=69525633
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW108128965A TWI825149B (en) | 2018-08-16 | 2019-08-14 | Producing method of mask integrated frame and frame |
Country Status (3)
Country | Link |
---|---|
CN (1) | CN112639156B (en) |
TW (1) | TWI825149B (en) |
WO (1) | WO2020036360A1 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113529081A (en) * | 2020-04-09 | 2021-10-22 | 悟勞茂材料公司 | Mask supporting template, method for manufacturing mask, and method for manufacturing frame-integrated mask |
TWI770929B (en) * | 2020-04-22 | 2022-07-11 | 南韓商奧魯姆材料股份有限公司 | Mask metal sheet and template for supporting mask metal sheet and template for supporting mask and producing method thereof |
TWI824969B (en) * | 2022-05-18 | 2023-12-01 | 南韓商豊元精密股份有限公司 | Hybrid type photomask and method of manufacturing thereof |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111361168A (en) * | 2020-03-20 | 2020-07-03 | 深圳市博泰数码智能技术有限公司 | Positioning welding mask machine |
JP2022071292A (en) * | 2020-10-28 | 2022-05-16 | キヤノン株式会社 | Vapor deposition mask, and production method of device using vapor deposition mask |
CN113604777B (en) * | 2021-08-20 | 2023-04-18 | 京东方科技集团股份有限公司 | Supporting plate, mask plate and preparation method of mask plate |
JP2023038075A (en) * | 2021-09-06 | 2023-03-16 | キオクシア株式会社 | Semiconductor manufacturing device and method for manufacturing semiconductor device |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100534580B1 (en) * | 2003-03-27 | 2005-12-07 | 삼성에스디아이 주식회사 | Deposition mask for display device and Method for fabricating the same |
KR100671658B1 (en) * | 2005-01-05 | 2007-01-19 | 삼성에스디아이 주식회사 | Mask frame and method for fixing a mask on the mask frame |
EP2397899A1 (en) * | 2010-06-15 | 2011-12-21 | Applied Materials, Inc. | Mask holding device |
JP6096515B2 (en) * | 2013-01-15 | 2017-03-15 | 株式会社アドテックエンジニアリング | ITO pattern exposure equipment |
JP2015127441A (en) * | 2013-12-27 | 2015-07-09 | 大日本印刷株式会社 | Manufacturing method of vapor deposition mask device |
CN103966547A (en) * | 2014-05-06 | 2014-08-06 | 昆山允升吉光电科技有限公司 | Composite mask plate assembly |
KR102322010B1 (en) * | 2014-10-24 | 2021-11-05 | 삼성디스플레이 주식회사 | Mask frame assembly, manufacturing method of the same and manufacturing method of organic light emitting display device there used |
CN117821896A (en) * | 2015-07-17 | 2024-04-05 | 凸版印刷株式会社 | Metal mask for vapor deposition and method for manufacturing metal mask for vapor deposition |
US9704786B2 (en) * | 2015-09-25 | 2017-07-11 | Infineon Technologies Ag | Direct selective adhesion promotor plating |
JP6304412B2 (en) * | 2017-02-06 | 2018-04-04 | 大日本印刷株式会社 | Method for manufacturing vapor deposition mask with metal frame, method for manufacturing organic semiconductor element, method for forming pattern |
KR101986527B1 (en) * | 2018-08-16 | 2019-06-07 | 주식회사 티지오테크 | Producing method of mask integrated frame and frame |
-
2019
- 2019-08-06 CN CN201980053640.XA patent/CN112639156B/en active Active
- 2019-08-06 WO PCT/KR2019/009825 patent/WO2020036360A1/en active Application Filing
- 2019-08-14 TW TW108128965A patent/TWI825149B/en active
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113529081A (en) * | 2020-04-09 | 2021-10-22 | 悟勞茂材料公司 | Mask supporting template, method for manufacturing mask, and method for manufacturing frame-integrated mask |
TWI770929B (en) * | 2020-04-22 | 2022-07-11 | 南韓商奧魯姆材料股份有限公司 | Mask metal sheet and template for supporting mask metal sheet and template for supporting mask and producing method thereof |
TWI824969B (en) * | 2022-05-18 | 2023-12-01 | 南韓商豊元精密股份有限公司 | Hybrid type photomask and method of manufacturing thereof |
Also Published As
Publication number | Publication date |
---|---|
TWI825149B (en) | 2023-12-11 |
WO2020036360A1 (en) | 2020-02-20 |
CN112639156A (en) | 2021-04-09 |
CN112639156B (en) | 2023-04-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI825149B (en) | Producing method of mask integrated frame and frame | |
TWI731482B (en) | Template for supporting mask, template for supporting mask metal sheet, producing method of template for supporting mask and producing method of mask integrated frame | |
TWI758661B (en) | Template for supporting mask and producing method thereof and producing method of mask integrated frame | |
CN111218644B (en) | Method for manufacturing frame-integrated mask and method for separating/replacing mask of frame-integrated mask | |
KR102236538B1 (en) | Producing method of mask and producing method of mask integrated frame | |
KR101986528B1 (en) | Template for supporting mask and producing methoe thereof and producing method of mask integrated frame | |
KR102202530B1 (en) | Producing method of mask, producing method of template for supporting mask and producing method of mask integrated frame | |
KR101988498B1 (en) | Template for supporting mask and producing methoe thereof and producing method of mask integrated frame | |
CN111224019A (en) | Mask supporting template, method for manufacturing the same, and method for manufacturing frame-integrated mask | |
KR102196797B1 (en) | Template for supporting mask and producing methoe thereof and producing method of mask integrated frame | |
KR102510212B1 (en) | Template for supporting mask and producing method of mask integrated frame | |
TWI810381B (en) | Template for supporting mask and producing method thereof and producing method of mask integrated frame | |
TW202032833A (en) | Producing method of mask, producing method of template for supporting mask and producing method of mask integrated frame | |
TWI826497B (en) | Template for supporting mask and producing methoe thereof and producing method of mask integrated frame | |
TW201945571A (en) | Producing device of mask integrated frame | |
CN111230295B (en) | Apparatus for manufacturing frame-integrated mask | |
KR101986527B1 (en) | Producing method of mask integrated frame and frame | |
KR102026456B1 (en) | Template for supporting mask and producing methoe thereof and producing method of mask integrated frame | |
KR102142436B1 (en) | Producing method of mask integrated frame and frame | |
KR102188948B1 (en) | Producing method of mask integrated frame | |
KR20200143313A (en) | Template for supporting mask | |
KR20210023918A (en) | Template for supporting mask and producing method of mask integrated frame | |
KR20230170293A (en) | Template for supporting mask and producing method thereof | |
KR20200044639A (en) | Producing method of mask, producing method of template for supporting mask and producing method of mask integrated frame |