TWI758661B - Template for supporting mask and producing method thereof and producing method of mask integrated frame - Google Patents

Template for supporting mask and producing method thereof and producing method of mask integrated frame Download PDF

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TWI758661B
TWI758661B TW108142560A TW108142560A TWI758661B TW I758661 B TWI758661 B TW I758661B TW 108142560 A TW108142560 A TW 108142560A TW 108142560 A TW108142560 A TW 108142560A TW I758661 B TWI758661 B TW I758661B
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mask
template
frame
metal film
manufacturing
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TW108142560A
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TW202021173A (en
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李炳一
張澤龍
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南韓商Tgo科技股份有限公司
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • H10K71/233—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers by photolithographic etching

Abstract

本發明涉及掩模支撐模板和其製造方法及框架一體型掩模的製造方法。本發明涉及的掩模支撐模板的製造方法，該掩模支撐模板用於支撐OLED像素形成用掩模並將該掩模對應至框架上，該方法的特徵在於包括：（a）在一面形成有臨時黏合部的模板上黏合掩模金屬膜的步驟；（b）縮減在模板上黏合的掩模金屬膜的掩模單元部的厚度的步驟；以及（c）通過在掩模單元部上形成掩模圖案來製造掩模的步驟。The present invention relates to a mask support template, a method of manufacturing the same, and a method of manufacturing a frame-integrated mask. The present invention relates to a method for manufacturing a mask support template, wherein the mask support template is used for supporting a mask for OLED pixel formation and corresponding to the frame, and the method is characterized by comprising: (a) forming a mask on one side with a the step of bonding the mask metal film on the template of the temporary bonding portion; (b) the step of reducing the thickness of the mask unit portion of the mask metal film bonded on the template; and (c) by forming a mask on the mask unit portion The steps of making a mask by patterning the mold.

Description

掩模支撐模板和其製造方法及框架一體型掩模的製造方法Mask support template, method for manufacturing the same, and method for manufacturing a frame-integrated mask

發明領域 本發明涉及掩模支撐模板和其製造方法及框架一體型掩模的製造方法。更具體地，涉及使掩模不發生變形且能夠穩定地得到支撐並移動，且將掩模與框架一體形成時可提高掩模與框架的黏貼力，且能夠在各掩模間準確地進行對準（align），且將掩模焊接在框架時能夠穩定地附著的掩模支撐模板和其製造方法及框架一體型掩模的製造方法。Field of Invention The present invention relates to a mask support template, a method of manufacturing the same, and a method of manufacturing a frame-integrated mask. More specifically, it relates to a mask that can be stably supported and moved without being deformed, and can improve the adhesion between the mask and the frame when the mask and the frame are integrally formed, and can accurately perform alignment between the masks. A mask support template capable of aligning and stably attaching a mask to a frame by welding, a method of manufacturing the same, and a method of manufacturing a frame-integrated mask.

發明背景 作為OLED（有機發光二極體）製造工藝中形成像素的技術，主要使用FMM（Fine Metal Mask，精細金屬掩模）方法，該方法將薄膜形式的金屬掩模（Shadow Mask，陰影掩模）緊貼於基板並且在所需位置上沉積有機物。Background of the Invention As a technology for forming a pixel in an OLED (Organic Light Emitting Diode) manufacturing process, an FMM (Fine Metal Mask) method is mainly used, which tightens a metal mask (Shadow Mask) in the form of a thin film. Attach to the substrate and deposit organics on the desired locations.

在現有的OLED製造工藝中，將掩模製造成條狀、板狀等後，將掩模焊接固定到OLED像素沉積框架並使用。一個掩模上可以具備與一個顯示器對應的多個單元。另外，為了製造大面積OLED，可將多個掩模固定於OLED像素沉積框架，在固定於框架的過程中，拉伸各個掩模，以使其變得平坦。調節拉伸力以使掩模的整體部分變得平坦是非常困難的作業。特別是，為了使各個單元全部變得平坦，同時對準尺寸僅為數μm至數十μm的掩模圖案，需要微調施加到掩模各側的拉伸力並且即時確認對準狀態的高度作業要求。In the existing OLED manufacturing process, after the mask is fabricated into a strip shape, a plate shape, etc., the mask is welded and fixed to the OLED pixel deposition frame and used. A plurality of cells corresponding to one display may be provided on one mask. In addition, in order to fabricate large area OLEDs, a plurality of masks can be fixed to the OLED pixel deposition frame, and during the process of fixing to the frame, each mask is stretched to make it flat. Adjusting the stretching force to flatten the entire portion of the mask is a very difficult task. In particular, in order to make all the cells flat while aligning a mask pattern with a size of only a few μm to several tens of μm, it is necessary to fine-tune the tensile force applied to each side of the mask and to confirm the alignment state immediately. .

儘管如此，在將多個掩模固定於一個框架過程中，仍然存在掩模之間以及掩模單元之間對準不好的問題。另外，在將掩模焊接固定於框架的過程中，掩模膜的厚度過薄且面積大，因此存在掩模因荷重而下垂或者扭曲的問題；由於焊接過程中在焊接部分產生的皺紋、毛刺（burr）等，導致掩模單元的對準不准的問題等。Nevertheless, in the process of fixing multiple masks to a frame, there is still a problem of poor alignment between masks and between mask units. In addition, in the process of welding and fixing the mask to the frame, the thickness of the mask film is too thin and the area is large, so there is a problem that the mask sags or twists due to the load; (burr), etc., resulting in a problem of inaccurate alignment of the mask unit, and the like.

在超高清的OLED中，現有的QHD畫質為500-600PPI（pixel per inch，每英吋像素），像素的尺寸達到約30-50μm，而4K UHD、8K UHD高清具有比之更高的~860PPI，~1600PPI等的解析度。如此，考慮到超高清的OLED的像素尺寸，需要將各單元之間的對準誤差縮減為數μm左右，超出這一誤差將導致產品的不良，所以收率可能極低。因此，需要開發能夠防止掩模的下垂或者扭曲等變形並且使對準精確的技術，以及將掩模固定於框架的技術等。In ultra-high-definition OLED, the existing QHD picture quality is 500-600PPI (pixel per inch, pixels per inch), and the pixel size reaches about 30-50μm, while 4K UHD and 8K UHD HD have higher ~ Resolutions of 860PPI, ~1600PPI, etc. In this way, considering the pixel size of ultra-high-definition OLEDs, it is necessary to reduce the alignment error between each unit to about a few μm. Exceeding this error will lead to defective products, so the yield may be extremely low. Therefore, it is necessary to develop a technique for preventing deformation such as sagging or twisting of the mask and for accurate alignment, a technique for fixing the mask to the frame, and the like.

發明概要 [技術問題] 因此，本發明是為了解決如上所述的現有技術的各種問題而提出的，其的目的在於，提供一種可使掩模不發生變形且穩定地得到支撐並移動的掩模支撐模板及其製造方法。Summary of Invention [technical problem] Therefore, the present invention has been made in order to solve the various problems of the prior art as described above, and an object of the present invention is to provide a mask support template that can stably support and move a mask without deformation, and a method for manufacturing the same. .

另外，本發明的目的在於，提供一種製造掩模時通過改善掩模金屬膜與絕緣部的黏合力來能夠更加準確地形成掩模圖案的掩模支撐模板及其製造方法。Another object of the present invention is to provide a mask support template capable of forming a mask pattern more accurately by improving the adhesion between a mask metal film and an insulating portion when manufacturing a mask, and a method for manufacturing the same.

另外，本發明的目的在於，提供一種將掩模附著在框架時能夠提高掩模與框架的黏貼力的掩模支撐模板及其製造方法。Another object of the present invention is to provide a mask support template and a manufacturing method thereof, which can improve the adhesion between the mask and the frame when the mask is attached to the frame.

另外，本發明的目的在於，提供一種將掩模焊接在框架時因焊珠充分地生成從而可穩定地附著的掩模支撐模板及其製造方法及框架一體型掩模的製造方法。Another object of the present invention is to provide a mask support stencil which can be stably attached due to sufficient bead formation when a mask is soldered to a frame, a method for producing the same, and a method for producing a frame-integrated mask.

另外，本發明的目的在於，提供一種將掩模附著到框架上之後可反復使用的掩模支撐模板及其製造方法。Another object of the present invention is to provide a mask support template that can be used repeatedly after attaching a mask to a frame, and a method of manufacturing the same.

另外，本發明其目的在於，提供一種框架一體型掩模的製造方法，其能夠形成掩模與框架的一體式結構。Another object of the present invention is to provide a method of manufacturing a frame-integrated mask capable of forming an integrated structure of a mask and a frame.

另外，本發明的目的在於，提供一種框架一體型掩模的製造方法，其能夠防止掩模下垂或者扭曲等變形並且使對準精確。Another object of the present invention is to provide a method of manufacturing a frame-integrated mask, which can prevent deformation such as sagging or twisting of the mask and achieve accurate alignment.

另外，本發明的目的在於，提供一種框架一體型掩模的製造方法，其顯著縮短製造時間，並且顯著提升收率。 [解決手段]Another object of the present invention is to provide a method of manufacturing a frame-integrated mask, which can significantly shorten the manufacturing time and significantly improve the yield. [Solution]

本發明的所述目的是通過以下掩模支撐模板的製造方法來實現，該模板(template)用於支撐OLED像素形成用掩模並將該掩模對應至框架上，該方法包括：（a）在一面形成有臨時黏合部的模板上黏合掩模金屬膜的步驟；（b）縮減在模板上黏合的掩模金屬膜的掩模單元部厚度的步驟；以及（c）通過在掩模單元部上形成掩模圖案來製造掩模的步驟。Said object of the present invention is achieved by a method of manufacturing a mask supporting template for supporting a mask for OLED pixel formation and corresponding to a frame, the method comprising: (a) the step of adhering the mask metal film on the template having the temporary adhesive portion formed on one side; (b) the step of reducing the thickness of the mask unit portion of the mask metal film bonded on the template; and (c) the step of reducing the thickness of the mask unit portion by the mask unit portion A step of forming a mask pattern on the mask to manufacture a mask.

掩模金屬膜可利用壓延（rolling）工藝形成。The mask metal film may be formed using a rolling process.

臨時黏合部可為基於加熱可分離的黏合劑或者黏合片材，基於照射UV可分離的黏合劑或者黏合片材。The temporary adhesive portion may be a heat-based detachable adhesive or an adhesive sheet, a UV-irradiated-based detachable adhesive or an adhesive sheet.

步驟（b）可包括：（b1）在除掩模金屬膜的掩模單元部以外的剩餘區域或者在掩模金屬膜的焊接部區域上形成第一絕緣部的步驟；以及（b2）通過蝕刻掩模金屬膜的掩模單元部來縮減厚度的步驟。The step (b) may include: (b1) the step of forming the first insulating portion on the remaining region other than the mask unit portion of the mask metal film or on the solder portion region of the mask metal film; and (b2) by etching The step of masking the cell portion of the metal film to reduce the thickness.

在厚度被縮減的掩模單元部上可進一步執行縮減粗糙度的處理。A roughness reduction process may be further performed on the mask unit portion whose thickness is reduced.

掩模單元部與虛擬部的厚度差可為2μm至25μm，從掩模單元部與虛擬部的分界至焊接部角部的端部的任意直線與水平線形成的角度可為0.057°至1.432°。The thickness difference between the mask unit part and the dummy part may be 2 μm to 25 μm, and the angle formed by any straight line from the boundary between the mask unit part and the dummy part to the end of the welding part corner and the horizontal line may be 0.057° to 1.432°.

進行縮減粗糙度的處理後，掩模單元部的表面粗糙度Ra可小於0.1μm（超過0）。After the roughness reduction process, the surface roughness Ra of the mask unit portion may be less than 0.1 μm (exceeds 0).

在進行縮減粗糙度的處理中，在掩模單元部上可進一步執行形成光澤層的處理。In performing the process of reducing the roughness, a process of forming a glossy layer may be further performed on the mask unit portion.

在步驟（a）與步驟（b）之間，可進一步執行縮減掩模金屬膜整體厚度的步驟。Between steps (a) and (b), a step of reducing the overall thickness of the mask metal film may be further performed.

掩模包括形成有多個掩模圖案的掩模單元及掩模單元周圍的虛擬部，在虛擬部的至少一部分上可相距間隔地形成有多個焊接部。The mask includes a mask unit on which a plurality of mask patterns are formed, and a dummy portion around the mask unit, and a plurality of welding portions may be formed at intervals on at least a part of the dummy portion.

虛擬部或者焊接部的厚度可至少大於10 μm，掩模單元的厚度可小於虛擬部或者焊接部的厚度。The thickness of the dummy portion or the welded portion may be at least greater than 10 μm, and the thickness of the mask unit may be smaller than the thickness of the dummy portion or the welded portion.

步驟（c）可包括：（c1）在掩模單元部上形成經圖案化的第二絕緣部的步驟；（c2）通過蝕刻第二絕緣部之間露出的掩模金屬膜的部分來形成掩模圖案的步驟；以及（c3）去除第二絕緣部的步驟。The step (c) may include: (c1) a step of forming a patterned second insulating portion on the mask unit portion; (c2) forming a mask by etching portions of the mask metal film exposed between the second insulating portions the step of patterning; and (c3) the step of removing the second insulating portion.

在步驟（b）和步驟（c）之間，還可包括將掩模金屬膜從模板分離，並在一面形成有臨時黏合部的第二模板上黏合掩模金屬膜的步驟。Between the step (b) and the step (c), a step of separating the mask metal film from the template and bonding the mask metal film on the second template with the temporary bonding portion formed on one side thereof may also be included.

掩模金屬膜與第二模板上的臨時黏合部之間可夾設有第三絕緣部。A third insulating portion may be sandwiched between the mask metal film and the temporary bonding portion on the second template.

此外，本發明的所述目的是通過以下掩模支撐模板來實現，該模板用於支撐OLED像素形成用掩模並將該掩模對應至框架上，該掩模支撐模板可包括：模板；及掩模，其包括形成有多個掩模圖案的掩模單元及掩模單元周圍的虛擬部，且在虛擬部的至少一部分上相距間隔地形成有多個焊接部，掩模單元的厚度小於虛擬部或者焊接部的厚度。In addition, the object of the present invention is achieved by a mask support template for supporting a mask for OLED pixel formation and corresponding to the frame, the mask support template may include: a template; and A mask comprising a mask unit formed with a plurality of mask patterns and a dummy portion around the mask unit, and a plurality of welding portions are formed on at least a part of the dummy portion at intervals, and the thickness of the mask unit is smaller than the dummy portion part or the thickness of the welded part.

掩模能夠以夾設有臨時黏合部的方式黏合在模板上。The mask can be adhered to the template by interposing the temporary adhesive portion.

虛擬部或者焊接部的厚度可至少大於10 μm，掩模單元的厚度可小於虛擬部或者焊接部的厚度，且厚度差為2μm至25μm。The thickness of the dummy portion or the welding portion may be at least greater than 10 μm, the thickness of the mask unit may be smaller than the thickness of the dummy portion or the welding portion, and the thickness difference is 2 μm to 25 μm.

掩模單元的表面粗糙度Ra可小於0.1μm（超過0）。The surface roughness Ra of the mask unit may be less than 0.1 μm (over 0).

此外，本發明的所述目的是通過以下框架一體型掩模的製造方法來實現的，該框架一體型掩模由至少一個掩模和用於支撐掩模的框架一體形成，該方法可包括：（a）在一面形成有臨時黏合部的模板上黏合掩模金屬膜的步驟；（b）縮減在模板上黏合的掩模金屬膜的掩模單元部厚度的步驟；(c)通過在掩模單元部上形成掩模圖案來製造掩模的步驟；（d）將模板裝載到具有至少一個掩模單元區域的框架上，並將掩模對應至框架的掩模單元區域的步驟；以及（e）將掩模附著在框架上的步驟。Further, the objects of the present invention are achieved by a method of manufacturing a frame-integrated mask integrally formed with at least one mask and a frame for supporting the mask, the method may include: (a) a step of adhering a mask metal film on a template having a temporary adhesive portion formed on one side; (b) a step of reducing the thickness of the mask unit portion of the mask metal film adhered on the template; the step of forming a mask pattern on the unit portion to manufacture a mask; (d) the step of loading a template on a frame having at least one mask unit area, and the step of corresponding the mask to the mask unit area of the frame; and (e) ) steps to attach the mask to the frame.

步驟（e）之後，可進一步對臨時黏合部進行加熱、化學處理、施加超聲波、施加UV中至少任意一個處理，從而使掩模與模板分離的步驟。After the step (e), at least any one of heating, chemical treatment, application of ultrasonic waves, and application of UV may be further performed on the temporary adhesive portion, so as to separate the mask and the template.

此外，本發明的所述目的是通過以下框架一體型掩模的製造方法來實現的，該框架一體型掩模由至少一個掩模和用於支撐掩模的框架一體形成，該方法包括：（a）在具有至少一個掩模單元區域的框架上裝載通過請求項1所述的製造方法製造的掩模支撐模板，並將掩模對應至框架的掩模單元區域的步驟；以及（b）將掩模附著在框架上的步驟。 [發明效果]Furthermore, the stated objects of the present invention are achieved by a method for manufacturing a frame-integrated mask that is integrally formed with at least one mask and a frame for supporting the mask, the method comprising: ( a) the step of loading a mask support template manufactured by the manufacturing method of claim 1 on a frame having at least one mask unit area, and corresponding the mask to the mask unit area of the frame; and (b) placing the mask The step of attaching the mask to the frame. [Inventive effect]

根據具有如上所述結構的本發明，具有可使掩模不發生變形且穩定地被支撐並移動的效果。According to the present invention having the above-described structure, there is an effect that the mask can be stably supported and moved without being deformed.

此外，根據本發明，將掩模焊接到框架上時由於焊珠充分地生成因此具有可穩定地附著的效果。Further, according to the present invention, since the bead is sufficiently generated when the mask is soldered to the frame, there is an effect that it can be stably attached.

此外，根據本發明，製造掩模時，通過提高掩模金屬膜與絕緣部的黏合力，具有可形成更加準確的掩模圖案的效果。Furthermore, according to the present invention, when the mask is manufactured, by improving the adhesion between the mask metal film and the insulating portion, there is an effect that a more accurate mask pattern can be formed.

此外，根據本發明，將掩模附著到框架上時，具有提高掩模與框架的黏貼力的效果。Furthermore, according to the present invention, when the mask is attached to the frame, there is an effect of improving the adhesion between the mask and the frame.

此外，根據本發明，將掩模附著到框架之後具有可反復使用的效果。Furthermore, according to the present invention, after the mask is attached to the frame, there is a reusable effect.

此外，根據本發明，具有掩模和框架能夠形成一體式結構的效果。Furthermore, according to the present invention, there is an effect that the mask and the frame can be formed into an integrated structure.

另外，根據本發明，具有能夠防止掩模下垂或者扭曲等的變形並使對準精確的效果。In addition, according to the present invention, there is an effect of preventing deformation such as sagging or twisting of the mask and enabling accurate alignment.

另外，根據本發明，具有能夠顯著縮短製造時間並顯著提升收率的效果。Further, according to the present invention, there is an effect that the production time can be remarkably shortened and the yield can be remarkably improved.

具體實施方式 後述的對於本發明的詳細說明將參照附圖，該附圖將能夠實施本發明的特定實施例作為示例示出。充分詳細地說明這些實施例，以使本領域技術人員能夠實施本發明。應當理解，本發明的多種實施例雖然彼此不同，但是不必相互排斥。例如，在此記載的特定形狀、結構及特性與一實施例有關，在不脫離本發明的精神及範圍的情況下，能夠實現為其他實施例。另外，應當理解，各個公開的實施例中的個別構成要素的位置或配置，在不脫離本發明的精神及範圍的情況下，能夠進行變更。因此，後述的詳細說明不應被視為具有限制意義，只要適當地說明，則本發明的範圍僅由所附的申請利範圍及與其等同的所有範圍限定。圖中相似的附圖標記從多方面表示相同或相似的功能，為了方便起見，長度、面積、厚度及其形狀可以誇大表示。Detailed ways The following detailed description of the invention will refer to the accompanying drawings, which illustrate by way of example specific embodiments in which the invention can be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the invention. It should be understood that the various embodiments of the invention, although different from each other, are not necessarily mutually exclusive. For example, the specific shapes, structures, and characteristics described herein relate to one embodiment, and other embodiments can be implemented without departing from the spirit and scope of the present invention. In addition, it should be understood that the positions or arrangements of individual constituent elements in each disclosed embodiment can be changed without departing from the spirit and scope of the present invention. Therefore, the following detailed description should not be construed in a limiting sense, and the scope of the present invention is limited only by the scope of the appended claims and all the scopes equivalent thereto as long as it is properly described. Like reference numerals in the drawings represent the same or similar functions from various aspects, and the length, area, thickness and shape thereof may be exaggerated for convenience.

以下，將參照附圖對本發明的優選實施例進行詳細說明，以便本領域技術人員能夠容易地實施本發明。Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily implement the present invention.

圖1是示出現有的OLED像素沉積用掩模10的示意圖。FIG. 1 is a schematic diagram showing a conventional mask 10 for OLED pixel deposition.

參照圖1，現有的掩模10可以以條式（Stick-Type）或者板式（Plate-Type）製造。圖1的（a）中示出的掩模10作為條式掩模，可以將條的兩側焊接固定於OLED像素沉積框架並使用。圖1的（b）中示出的掩模100作為板式掩模，可以使用於大面積的像素形成工藝。Referring to FIG. 1 , the existing mask 10 may be manufactured in a stick-type (Stick-Type) or a plate-type (Plate-Type). The mask 10 shown in (a) of FIG. 1 is used as a strip mask, and both sides of the strip can be welded and fixed to the OLED pixel deposition frame and used. The mask 100 shown in FIG. 1( b ) is used as a plate mask and can be used in a large-area pixel formation process.

在掩模10的主體（Body，或者掩模膜11）中，具備多個顯示單元C。一個單元C與智慧手機等的一個顯示器（display）對應。單元C中形成有像素圖案P，以便與顯示器的各個像素對應。放大單元C時，顯示與R、G、B對應的多個像素圖案P。作為一例，在單元C中形成有像素圖案P，以便具有70×140解析度。即，大量的像素圖案P形成集合，以構成一個單元C，並且多個單元C可以形成於掩模10。The main body (Body, or mask film 11 ) of the mask 10 includes a plurality of display cells C. As shown in FIG. One cell C corresponds to one display (display) of a smartphone or the like. A pixel pattern P is formed in the cell C so as to correspond to each pixel of the display. When the cell C is enlarged, a plurality of pixel patterns P corresponding to R, G, and B are displayed. As an example, the pixel pattern P is formed in the cell C so as to have a resolution of 70×140. That is, a large number of pixel patterns P are assembled to constitute one cell C, and a plurality of cells C may be formed in the mask 10 .

圖2是示出現有的將掩模10附著至框架20的過程的示意圖。圖3是示出在現有的拉伸F1~F2掩模10的過程中發生單元之間的對準誤差的示意圖。下面，以圖1的（a）示出的具備6個單元C（C1~C6）的條式掩模10為例進行說明。FIG. 2 is a schematic diagram illustrating a conventional process of attaching the mask 10 to the frame 20 . FIG. 3 is a schematic diagram showing that an alignment error between cells occurs in the process of stretching the F1 to F2 masks 10 in the related art. Hereinafter, the stripe mask 10 including the six cells C ( C1 to C6 ) shown in FIG. 1( a ) will be described as an example.

參照圖2的（a），首先，應將條式掩模10平坦地展開。沿著條式掩模10的長軸方向施加拉伸力F1~F2，隨著拉伸，展開條式掩模10。在該狀態下，將條式掩模10裝載在方框形狀的框架20上。條式掩模10的單元C1~C6將位於框架20的框內部空白區域部分。框架20的尺寸可以足以使一個條式掩模10的單元C1~C6位於框內部空白區域，也可以足以使多個條式掩模10的單元C1~C6位於框內部空白區域。Referring to FIG. 2( a ), first, the strip mask 10 should be flatly developed. Tensile forces F1 to F2 are applied along the long axis direction of the strip mask 10 , and the strip mask 10 is unfolded as the strip is stretched. In this state, the strip mask 10 is loaded on the frame-shaped frame 20 . The cells C1 to C6 of the strip mask 10 will be located in the blank area inside the frame of the frame 20 . The size of the frame 20 may be sufficient for the cells C1 to C6 of one strip mask 10 to be located in the blank area inside the frame, and may also be sufficient for the cells C1 to C6 of a plurality of strip masks 10 to be located in the blank area inside the frame.

參照圖2的（b），微調施加到條式掩模10的各側的拉伸力F1~F2，同時對準後，隨著焊接W條式掩模10側面的一部分，將條式掩模10和框架20彼此連接。圖2的（c）示出彼此連接的條式掩模10和框架的側截面。Referring to (b) of FIG. 2 , the tensile forces F1 to F2 applied to each side of the strip mask 10 are fine-tuned, and after the simultaneous alignment, the strip mask 10 is welded as part of the side surface of the strip mask 10 is welded. 10 and frame 20 are connected to each other. (c) of FIG. 2 shows a side cross-section of the strip mask 10 and the frame connected to each other.

參照圖3，儘管微調施加到條式掩模10的各側的拉伸力F1~F2，但是顯示出掩模單元C1~C3彼此之間對準不好的問題。例如，單元C1~C3的圖案P之間的距離D1~D1"、D2~D2"彼此不同，或者圖案P歪斜。由於條式掩模10具有包括多個（作為一例，為6個）單元C1~C6的大面積，並且具有數十μm的非常薄的厚度，所以容易因荷重而下垂或者扭曲。另外，調節拉伸力F1~F2，以使各個單元C1~C6全部變得平坦，同時通過顯微鏡即時確認各個單元C1~C6之間的對準狀態是非常困難的作業。Referring to FIG. 3 , although the tensile forces F1 ˜ F2 applied to each side of the strip mask 10 are fine-tuned, a problem of poor alignment of the mask units C1 ˜ C3 with each other is shown. For example, the distances D1 to D1" and D2 to D2" between the patterns P of the cells C1 to C3 are different from each other, or the pattern P is skewed. Since the strip mask 10 has a large area including a plurality of (for example, six) cells C1 to C6 and has a very thin thickness of several tens of μm, it tends to sag or twist due to a load. In addition, it is very difficult to adjust the tension forces F1 to F2 so that all the cells C1 to C6 are flattened and to confirm the alignment state of the cells C1 to C6 with a microscope at the same time.

因此，拉伸力F1~F2的微小誤差可能引起條式掩模10各單元C1~C3的拉伸或者展開程度的誤差，由此，導致掩模圖案P之間的距離D1~D1"、D2~D2"不同。雖然完美地對準以使誤差為0是非常困難的，但是為了避免尺寸為數μm至數十μm的掩模圖案P對超高清OLED的像素工藝造成壞影響，優選對準誤差不大於3μm。將如此相鄰的單元之間的對準誤差稱為像素定位精度（pixel position accuracy，PPA）。Therefore, a slight error in the stretching force F1 ˜ F2 may cause an error in the stretching or unfolding degree of each unit C1 ˜ C3 of the strip mask 10 , thereby resulting in the distances D1 ˜ D1 ″, D2 between the mask patterns P ~D2" is different. Although it is very difficult to align perfectly so that the error is 0, in order to avoid the bad influence of the mask pattern P with a size of several μm to several tens of μm on the pixel process of the ultra-high definition OLED, the alignment error is preferably not larger than 3 μm. The alignment error between such adjacent cells is called pixel position accuracy (PPA).

另外，將大概6-20個條式掩模10分別連接在一個框架20，同時使多個條式掩模10之間，以及條式掩模10的多個單元C-C6之間的對準狀態精確是非常困難的作業，並且只能增加基於對準的工藝時間，這成為降低生產性的重要理由。In addition, about 6-20 strip masks 10 are respectively connected to one frame 20, and the alignment between the strip masks 10 and between the cells C-C6 of the strip masks 10 is simultaneously made. Precise state is a very difficult task and can only increase the process time based on alignment, which is an important reason for reducing productivity.

另一方面，將條式掩模10連接固定到框架20後，施加到條式掩模10的拉伸力F1~F2會反向地作用於框架20。即，由於拉伸力F1~F2而繃緊拉伸的條式掩模10連接在框架20後，能夠將張力（tension）作用於框架20。通常，該張力不大，不會對框架20產生大的影響，但是在框架20的尺寸實現小型化且強度變低的情況下，這種張力可能使框架20細微變形。如此，可能發生破壞多個單元C~C6間的對準狀態的問題。On the other hand, after the strip mask 10 is connected and fixed to the frame 20 , the tensile forces F1 ˜ F2 applied to the strip mask 10 will act on the frame 20 in opposite directions. That is, after the strip mask 10 stretched tautly by the tensile forces F1 to F2 is connected to the frame 20 , tension can be applied to the frame 20 . Usually, the tension is not large and does not have a large influence on the frame 20, but when the size of the frame 20 is reduced and the strength becomes low, the tension may slightly deform the frame 20. In this way, there may be a problem that the alignment state between the plurality of cells C to C6 is destroyed.

鑒於此，本發明提出能夠使掩模100與框架200形成一體式結構的框架200以及框架一體型掩模。與框架200形成一體的掩模100能夠防止下垂或者扭曲等變形，並且精確地對準於框架200。當掩模100連接到框架200上時，不對掩模100施加任何拉伸力，因此掩模100連接到框架200後，不會對掩模200施加引起變形的張力。並且，能夠顯著地縮短將掩模100一體地連接到框架200的製造時間，並且顯著提升收率。In view of this, the present invention proposes a frame 200 and a frame-integrated mask capable of forming an integrated structure of the mask 100 and the frame 200 . The mask 100 integrally formed with the frame 200 can prevent deformation such as sagging or twisting, and is precisely aligned with the frame 200 . When the mask 100 is connected to the frame 200 , no tensile force is applied to the mask 100 , so after the mask 100 is connected to the frame 200 , no tension is applied to the mask 200 that causes deformation. Also, the manufacturing time for integrally connecting the mask 100 to the frame 200 can be remarkably shortened, and the yield can be remarkably improved.

圖4是示出本發明的一實施例涉及的框架一體型掩模的主視圖（圖4的（a））以及側剖視圖（圖4的（b）），圖5是示出本發明的一實施例涉及的框架的主視圖（圖5的（a））以及側剖視圖（圖5的b）。4 is a front view ( FIG. 4( a )) and a side cross-sectional view ( FIG. 4( b )) showing a frame-integrated mask according to an embodiment of the present invention, and FIG. 5 shows an embodiment of the present invention. A front view ( FIG. 5( a )) and a side cross-sectional view ( FIG. 5( b )) of the frame according to the example.

參照圖4以及圖5，框架一體型掩模可以包括多個掩模100以及一個框架200。換句話說，將多個掩模100分別附著至框架200的形態。以下，為了便於說明，以四角形狀的掩模100為例進行說明，但是掩模100在附著至框架200之前，可以是兩側具備用於夾持的突出部的條式掩模形狀，附著至框架200後，可以去除突出部。4 and 5 , the frame-integrated mask may include a plurality of masks 100 and one frame 200 . In other words, a form of attaching a plurality of masks 100 to the frame 200, respectively. Hereinafter, for convenience of description, the square-shaped mask 100 is used as an example for description. However, before the mask 100 is attached to the frame 200, it may be a strip-shaped mask with protrusions for clamping on both sides and attached to the frame 200. After framing 200, the tabs can be removed.

各個掩模100上形成有多個掩模圖案P，一個掩模100上可以形成有一個單元C。一個掩模單元C可以與智慧手機等的一個顯示器對應。A plurality of mask patterns P are formed on each mask 100 , and one cell C may be formed on one mask 100 . One mask unit C can correspond to one display of a smartphone or the like.

框架200可以以附著多個掩模100的形式形成。包括最外圍邊緣在內，框架200可以包括沿著第一方向（例如，橫向）、第二方向（例如，豎向）形成的多個角部。這種多個角部可以在框架200上劃分用於附著掩模100的區域。The frame 200 may be formed in the form of attaching a plurality of masks 100 . Including the outermost edge, the frame 200 may include a plurality of corners formed along a first direction (eg, lateral direction), a second direction (eg, vertical direction). Such a plurality of corners may divide an area on the frame 200 for attaching the mask 100 .

框架200可以包括大概呈四角形狀、方框形狀的邊緣框架部210。邊緣框架部210的內部可以是中空形狀。即，邊緣框架部210可以包括中空區域R。框架200可以由因瓦合金、超級因瓦合金、鋁、鈦等金屬材料形成，考慮到熱變形，優選由與掩模具有相同熱膨脹係數的因瓦合金、超級因瓦合金、鎳、鎳-鈷等材料形成，這些材料均可應用於所有作為框架200的構成要素的邊緣框架部210、掩模單元片材部220。The frame 200 may include an edge frame portion 210 having a generally quadrangular, box-shaped shape. The inside of the edge frame part 210 may have a hollow shape. That is, the edge frame part 210 may include the hollow region R. As shown in FIG. The frame 200 may be formed of metal materials such as Invar, super Invar, aluminum, titanium, etc. In consideration of thermal deformation, it is preferably composed of Invar, super Invar, nickel, nickel-cobalt having the same thermal expansion coefficient as the mask. These materials can be applied to all of the edge frame portion 210 and the mask unit sheet portion 220 that are constituent elements of the frame 200 .

另外，框架200具備多個掩模單元區域CR，並且可以包括連接到邊緣框架部210的掩模單元片材部220。掩模單元片材部220可以與掩模100相同地通過壓延形成，或者也可以通過使用如電鑄的其他成膜工藝形成。另外，掩模單元片材部220可以通過雷射劃線、蝕刻等在平面狀片材（sheet）上形成多個掩模單元區域CR後，連接到邊緣框架部210。或者，掩模單元片材部220可以將平面狀的片材連接到邊緣框架部210後，通過雷射劃線、蝕刻等形成多個掩模單元區域CR。本說明書中主要對首先在掩模單元片材部220形成多個掩模單元區域CR後，連接到邊緣框架部210的情況進行說明。In addition, the frame 200 is provided with a plurality of mask unit regions CR, and may include a mask unit sheet portion 220 connected to the edge frame portion 210 . The mask unit sheet portion 220 may be formed by rolling like the mask 100, or may be formed by using another film forming process such as electroforming. In addition, the mask unit sheet portion 220 may be connected to the edge frame portion 210 after forming a plurality of mask unit regions CR on a planar sheet by laser scribing, etching, or the like. Alternatively, the mask unit sheet portion 220 may form a plurality of mask unit regions CR by laser scribing, etching, or the like after connecting a planar sheet to the edge frame portion 210 . In this specification, the case where a plurality of mask unit regions CR are first formed in the mask unit sheet portion 220 and then connected to the edge frame portion 210 will be mainly described.

掩模單元片材部220可以包括邊緣片材部221以及第一柵格片材部223、第二柵格片材部225中的至少一種。邊緣片材部221以及第一柵格片材部223、第二柵格片材部225是指在同一片材上劃分的各個部分，它們彼此之間形成一體。The mask unit sheet portion 220 may include an edge sheet portion 221 and at least one of a first grid sheet portion 223 and a second grid sheet portion 225 . The edge sheet portion 221 , the first grid sheet portion 223 , and the second grid sheet portion 225 refer to respective portions divided on the same sheet, and these are integrally formed with each other.

邊緣片材部221可以實質上連接到邊緣框架部210。因此，邊緣片材部221可以具有與邊緣框架部210對應的大致四角形狀、方框形狀。The edge sheet portion 221 may be substantially connected to the edge frame portion 210 . Therefore, the edge sheet portion 221 may have a substantially square shape or a square shape corresponding to the edge frame portion 210 .

另外，第一柵格片材部223可以沿著第一方向（橫向）延伸形成。第一柵格片材部223以直線形態形成，其兩端可以連接到邊緣片材部221。當掩模單元片材部220包括多個第一柵格片材部223時，各個第一柵格片材部223優選具有相同的間距。In addition, the first grid sheet portion 223 may be formed to extend along the first direction (lateral direction). The first grid sheet portion 223 is formed in a linear form, and both ends thereof may be connected to the edge sheet portion 221 . When the mask unit sheet portion 220 includes a plurality of first grid sheet portions 223, each of the first grid sheet portions 223 preferably has the same pitch.

另外，進一步地，第二柵格片材部225可以沿著第二方向（豎向）延伸形成，第二柵格片材部225以直線形態形成，其兩端可以連接到邊緣片材部221。第一柵格片材部223和第二柵格片材部225可以彼此垂直交叉。當掩模單元片材部220包括多個第二柵格片材部225時，各個第二柵格片材部225優選具有相同的間距。In addition, further, the second grid sheet portion 225 may be formed to extend along the second direction (vertical direction), the second grid sheet portion 225 may be formed in a straight line, and both ends of the second grid sheet portion 225 may be connected to the edge sheet portion 221 . The first grid sheet part 223 and the second grid sheet part 225 may cross each other perpendicularly. When the mask unit sheet portion 220 includes a plurality of second grid sheet portions 225, each of the second grid sheet portions 225 preferably has the same pitch.

另一方面，第一柵格片材部223之間的間距和第二柵格片材部225之間的間距，可以根據掩模單元C的尺寸而相同或不同。On the other hand, the interval between the first grid sheet portions 223 and the interval between the second grid sheet portions 225 may be the same or different depending on the size of the mask unit C. As shown in FIG.

第一柵格片材部223以及第二柵格片材部225雖然具有薄膜形態的薄的厚度，但是垂直於長度方向的截面的形狀可以是諸如矩形、如梯形的四邊形形狀、三角形形狀等，邊、角的一部分可以形成圓形。截面形狀可以在雷射劃線、蝕刻等過程中進行調節。Although the first grid sheet portion 223 and the second grid sheet portion 225 have a thin thickness in the form of a film, the shape of the cross-section perpendicular to the longitudinal direction may be, for example, a rectangle, a quadrangular shape such as a trapezoid, a triangular shape, or the like. Parts of the sides and corners may be rounded. The cross-sectional shape can be adjusted during laser scribing, etching, etc.

邊緣框架部210的厚度可以大於掩模單元片材部220的厚度。由於邊緣框架部210負責框架200的整體剛性，可以以數mm至數十cm的厚度形成。The thickness of the edge frame part 210 may be greater than the thickness of the mask unit sheet part 220 . Since the edge frame portion 210 is responsible for the overall rigidity of the frame 200, it may be formed with a thickness of several mm to several tens of cm.

就掩模單元片材部220而言，實際上製造厚片材的工藝困難，過厚，則有可能在OLED像素沉積工藝中有機物源600（參照圖20）堵塞通過掩模100的路徑。相反，過薄，則有可能難以確保足以支撐掩模100的剛性。由此，掩模單元片材部220優選比邊緣框架部210的厚度薄，但是比掩模100更厚。掩模單元片材部220的厚度可以約為0.1mm至1mm。並且，第一柵格片材部223、第二柵格片材部225的寬度可以約為1~5mm。As for the mask unit sheet portion 220 , it is actually difficult to manufacture a thick sheet, and if the thickness is too thick, the organic source 600 (refer to FIG. 20 ) may block the path through the mask 100 during the OLED pixel deposition process. On the other hand, if it is too thin, it may be difficult to ensure rigidity enough to support the mask 100 . Thus, the mask unit sheet portion 220 is preferably thinner than the edge frame portion 210 , but thicker than the mask 100 . The thickness of the mask unit sheet portion 220 may be about 0.1 mm to 1 mm. In addition, the width of the first grid sheet portion 223 and the second grid sheet portion 225 may be approximately 1 to 5 mm.

在平面狀片材中，除了邊緣片材部221、第一柵格片材部223、第二柵格片材部225佔據的區域以外，可以提供多個掩模單元區域CR（CR11~CR56）。從另一個角度來說，掩模單元區域CR可以是指在邊緣框架部210的中空區域R中，除了邊緣片材部221、第一柵格片材部223、第二柵格片材部225佔據的區域以外的空白區域。In the planar sheet, a plurality of mask unit regions CR ( CR11 to CR56 ) may be provided in addition to the regions occupied by the edge sheet portion 221 , the first grid sheet portion 223 , and the second grid sheet portion 225 . . From another perspective, the mask unit region CR may refer to the hollow region R of the edge frame part 210 , except for the edge sheet part 221 , the first grid sheet part 223 , and the second grid sheet part 225 Blank space outside the occupied area.

隨著掩模100的單元C與該掩模單元區域CR對應，實際上可以用作通過掩模圖案P沉積OLED的像素的通道。如前所述，一個掩模單元C與智慧手機等的一個顯示器對應。一個掩模100中可以形成有用於構成一個單元C的掩模圖案P。或者，一個掩模100具備多個單元C且各個單元C可以與框架200的各個單元區域CR對應，但是為了精確地對準掩模100，需要避免大面積掩模100，優選為具備一個單元C的小面積掩模100。或者，也可以是具有多個單元C的一個掩模100與掩模200的一個單元區域CR對應。此時，為了精確地對準，可以考慮具有2-3個單元C的掩模100與掩模200的一個單元區域CR對應。With the cell C of the mask 100 corresponding to this mask cell region CR, it can actually be used as a channel for depositing the pixels of the OLED through the mask pattern P. As described above, one mask unit C corresponds to one display of a smartphone or the like. A mask pattern P for constituting one cell C may be formed in one mask 100 . Alternatively, one mask 100 includes a plurality of cells C, and each cell C may correspond to each cell region CR of the frame 200, but in order to accurately align the mask 100, it is necessary to avoid a large-area mask 100, and preferably one cell C is provided The small area mask 100. Alternatively, one mask 100 having a plurality of cells C may correspond to one cell region CR of the mask 200 . At this time, for accurate alignment, it may be considered that the mask 100 having 2-3 cells C corresponds to one cell region CR of the mask 200 .

掩模200具備多個掩模單元區域CR，可以將各個掩模100以各個掩模單元C與各個掩模單元區域CR分別對應的方式附著。各個掩模100可以包括形成有多個掩模圖案P的掩模單元C以及掩模單元C周邊的虛擬部（相當於除了單元C以外的掩模膜110部分）。虛擬部可以只包括掩模膜110，或者可以包括形成有與掩模圖案P類似形態的規定的虛擬圖案的掩模膜110。掩模單元C與框架200的掩模單元區域CR對應，虛擬部的一部分或者全部可以附著至框架200（掩模單元片材部220）。由此，掩模100和框架200可以形成一體式結構。The mask 200 includes a plurality of mask cell regions CR, and each mask 100 can be attached so that each mask cell C corresponds to each mask cell region CR, respectively. Each mask 100 may include a mask cell C in which a plurality of mask patterns P are formed, and a dummy portion around the mask cell C (corresponding to a portion of the mask film 110 other than the cell C). The dummy portion may include only the mask film 110 , or may include the mask film 110 in which a prescribed dummy pattern similar to the mask pattern P is formed. The mask unit C corresponds to the mask unit region CR of the frame 200, and a part or the whole of the dummy part may be attached to the frame 200 (mask unit sheet part 220). Thus, the mask 100 and the frame 200 may form an integrated structure.

另一方面，根據另一實施例，框架不是以將掩模單元片材部220附著至邊緣框架部210的方式製造，而是可以使用在邊緣框架部210的中空區域R部分直接形成與邊緣框架部210成為一體的柵格框架（相當於柵格片材部223、225）的框架。這種形態的框架也包括至少一個掩模單元區域CR，可以使掩模100與掩模單元區域CR對應，以製造框架一體型掩模。On the other hand, according to another embodiment, the frame is not manufactured in a manner of attaching the mask unit sheet part 220 to the edge frame part 210 , but may be directly formed with the edge frame using the hollow region R portion of the edge frame part 210 The part 210 is a frame of an integrated grid frame (corresponding to the grid sheet parts 223 and 225 ). The frame of this form also includes at least one mask unit region CR, and the mask 100 can be made to correspond to the mask unit region CR to manufacture a frame-integrated mask.

以下，對框架一體型掩模的製造過程進行說明。Hereinafter, the manufacturing process of the frame-integrated mask will be described.

首先，可以提供圖4以及圖5中所述的框架200。圖6是示出本發明的一實施例涉及的框架200的製造過程的示意圖。First, the frame 200 described in FIGS. 4 and 5 may be provided. FIG. 6 is a schematic diagram illustrating a manufacturing process of the frame 200 according to an embodiment of the present invention.

參照圖6的（a），提供邊緣框架部210。邊緣框架部210可以是包括中空區域R的方框形狀。Referring to (a) of FIG. 6 , the edge frame portion 210 is provided. The edge frame part 210 may be a box shape including a hollow region R. As shown in FIG.

其次，參照圖6的（b），製造掩模單元片材部220。掩模單元片材部220使用壓延、電鑄或者其他的成膜工藝，製造平面狀的片材後，通過雷射劃線、蝕刻等，去除掩模單元區域CR部分，從而可以製造。本說明書中，以形成6×5的掩模單元區域CR（CR11~CR56）為例進行說明。可以存在5個第一柵格片材部223以及4個第二柵格片材部225。Next, referring to FIG. 6( b ), the mask unit sheet portion 220 is manufactured. The mask unit sheet portion 220 can be manufactured by removing the mask unit region CR portion by laser scribing, etching, or the like after manufacturing a flat sheet using a rolling, electroforming, or other film forming process. In this specification, the formation of 6×5 mask cell regions CR ( CR11 to CR56 ) will be described as an example. There may be 5 first grid sheet portions 223 and 4 second grid sheet portions 225 .

然後，可以將掩模單元片材部220與邊緣框架部210對應。在對應的過程中，可以在拉伸F1~F4掩模單元片材部220的所有側部以使掩模單元片材部220平坦伸展的狀態下，使邊緣片材部221與邊緣框架部210對應。在一側部也能以多個點（作為圖6的（b）的例，1~3點）夾持掩模單元片材部220並進行拉伸。另一方面，也可以不是所有側部，而是沿著一部分側部方向，拉伸F1、F2掩模單元片材部220。Then, the mask unit sheet portion 220 may be corresponded to the edge frame portion 210 . In the corresponding process, the edge sheet portion 221 and the edge frame portion 210 may be formed in a state in which all the side portions of the mask unit sheet portions 220 of F1 to F4 are stretched so that the mask unit sheet portion 220 is stretched flatly. correspond. The mask unit sheet portion 220 can be stretched by sandwiching the mask unit sheet portion 220 at a plurality of points (as an example of FIG. 6( b ), 1 to 3 points) on one side. On the other hand, the F1 and F2 mask unit sheet portions 220 may be stretched along a part of the side direction, not all the side portions.

然後，使掩模單元片材部220與邊緣框架部210對應時，可以將掩模單元片材部220的邊緣片材部221以焊接W方式附著。優選地，焊接W所有側部，以便掩模單元片材部220牢固地附著至邊緣框架部210，但不限於此。應當最大限度地接近框架部210的角部側進行焊接W，才能最大限度地減少邊緣框架部210和掩模單元片材部220之間的翹起空間，並提升黏合性。焊接W部分可以以線（line）或者點（spot）形狀生成，具有與掩模單元片材部220相同的材料，並可以成為將邊緣框架部210和掩模單元片材部220連接成一體的媒介。Then, when the mask unit sheet portion 220 is made to correspond to the edge frame portion 210, the edge sheet portion 221 of the mask unit sheet portion 220 may be attached by welding. Preferably, all sides are welded so that the mask unit sheet portion 220 is firmly attached to the edge frame portion 210, but is not limited thereto. Welding W should be performed as close to the corner side of the frame portion 210 as possible, so as to minimize the raised space between the edge frame portion 210 and the mask unit sheet portion 220 and improve the adhesiveness. The welding W portion may be produced in a line or spot shape, having the same material as the mask unit sheet portion 220 , and may be one that connects the edge frame portion 210 and the mask unit sheet portion 220 in one piece medium.

圖7是示出本發明的另一實施例涉及的框架的製造過程的示意圖。圖6的實施例首先製造具備掩模單元區域CR的掩模單元片材部220後，附著至邊緣框架部210，而圖7的實施例將平面狀的片材附著至邊緣框架部210後，形成掩模單元區域CR部分。FIG. 7 is a schematic diagram showing a manufacturing process of a frame according to another embodiment of the present invention. In the embodiment of FIG. 6 , the mask cell sheet portion 220 having the mask cell region CR is first manufactured, and then attached to the edge frame portion 210 , while the embodiment of FIG. 7 attaches a planar sheet to the edge frame portion 210 , A mask cell region CR portion is formed.

首先，與圖6的（a）相同地提供包括中空區域R的邊緣框架部210。First, the edge frame portion 210 including the hollow region R is provided in the same manner as in (a) of FIG. 6 .

然後，參照圖7的（a），可以使平面狀的片材（平面狀的掩模單元片材部220'）與邊緣框架部210對應。掩模單元片材部220'是還未形成掩模單元區域CR的平面狀態。在對應的過程中，可以在拉伸F1~F4掩模單元片材部220'的所有側部以使掩模單元片材部220'平坦伸展狀態下，使其與邊緣框架部210對應。在一側部也能以多個點（作為圖7的（a）的例，1~3點）夾持單元片材部220'並進行拉伸。另一方面，也可以不是所有側部，而是沿著一部分側部方向，拉伸F1、F2掩模單元片材部220'。Then, referring to FIG. 7( a ), a planar sheet (planar mask unit sheet portion 220 ′) can be made to correspond to the edge frame portion 210 . The mask unit sheet portion 220' is a planar state in which the mask unit region CR has not yet been formed. In the corresponding process, all side portions of the mask unit sheet portions 220 ′ of F1 to F4 may be stretched to make the mask unit sheet portions 220 ′ flat and stretched to correspond to the edge frame portions 210 . The unit sheet portion 220 ′ can be sandwiched and stretched at a plurality of points (as an example of FIG. 7( a ), 1 to 3 points) on one side. On the other hand, the F1 and F2 mask unit sheet portions 220 ′ may be stretched along a part of the side portions, not all the side portions.

然後，使掩模單元片材部220'與邊緣框架部210對應時，可以將掩模單元片材部220'的邊緣部分以焊接W方式進行附著。優選地，焊接W所有側部，以便掩模單元片材部220'牢固地附著至邊緣框架部220，但不限於此。應當最大限度地接近邊緣框架部210的角部側進行焊接W，才能最大限度地減少邊緣框架部210和掩模單元片材部220'之間的翹起空間，並提升黏合性。焊接W部分可以以線（line）或者點（spot）形狀生成，與掩模單元片材部220'具有相同材料，並可以成為將邊緣框架部210和掩模單元片材部220'連接成一體的媒介。Then, when the mask unit sheet portion 220 ′ is made to correspond to the edge frame portion 210 , the edge portion of the mask unit sheet portion 220 ′ can be attached by welding. Preferably, all sides are welded so that the mask unit sheet portion 220' is firmly attached to the edge frame portion 220, but is not limited thereto. Welding W should be performed as close to the corner side of the edge frame portion 210 as possible, so as to minimize the raised space between the edge frame portion 210 and the mask unit sheet portion 220 ′ and improve adhesion. The welding W portion may be generated in the shape of a line or a spot, having the same material as the mask unit sheet portion 220 ′, and may be formed to integrally connect the edge frame portion 210 and the mask unit sheet portion 220 ′ medium.

然後，參照圖7的（b），在平面狀的片材（平面狀的掩模單元片材部220'）上形成掩模單元區域CR。通過雷射劃線、蝕刻等，去除掩模單元區域CR部分的片材，從而可以形成掩模單元區域CR。本說明書中，以形成6×5的掩模單元區域CR（CR11~CR56）為例進行說明。當形成掩模單元區域CR時，可以構成掩模單元片材部220，其中，與邊緣框架部210焊接W的部分成為邊緣片材部221，並且具備5個第一柵格片材部223以及4個第二柵格片材部225。Then, referring to FIG. 7( b ), the mask unit region CR is formed on the planar sheet (the planar mask unit sheet portion 220 ′). The mask cell region CR can be formed by removing the sheet of the mask cell region CR by laser scribing, etching, or the like. In this specification, the formation of 6×5 mask cell regions CR ( CR11 to CR56 ) will be described as an example. When the mask cell region CR is formed, the mask cell sheet portion 220 may be constituted in which the portion welded W to the edge frame portion 210 becomes the edge sheet portion 221, and includes five first grid sheet portions 223 and 4 second grid sheet portions 225 .

圖8是示出用於形成現有的高解析度OLED的掩模的示意圖。FIG. 8 is a schematic diagram showing a mask for forming a conventional high-resolution OLED.

為了實現高解析度的OLED，圖案的尺寸逐漸變小，其使用的掩模金屬膜的厚度也有必要變薄。如圖8的（a）所示，如果想要實現高解析度的OLED像素6，則在掩模10'中需要縮減像素間隔及像素尺寸等（PD->PD'）。此外，為了防止因陰影效應導致OLED像素6不均勻地沉積，有必要將掩模10'的圖案傾斜地形成14。然而，在具有約30~50μm的厚度T1的較厚的掩模10'中將圖案傾斜地形成14的過程中，由於在細微的像素間隔PD'和像素尺寸上很難形成與其匹配的圖案13，因此成為加工工藝中導致收率降低的因素。換而言之，具有細微的像素間隔PD'且為了將圖案傾斜地形成14，有必要使用較薄厚度的掩模10'。In order to realize a high-resolution OLED, the size of the pattern is gradually reduced, and the thickness of the mask metal film used for it must also be reduced. As shown in FIG. 8( a ), in order to realize high-resolution OLED pixels 6 , it is necessary to reduce the pixel interval and pixel size in the mask 10 ′ (PD->PD′). Furthermore, in order to prevent uneven deposition of the OLED pixels 6 due to shadowing effects, it is necessary to form 14 the pattern of the mask 10' obliquely. However, in the process of forming a pattern 14 obliquely in a thicker mask 10' having a thickness T1 of about 30 to 50 μm, since it is difficult to form a pattern 13 matching the fine pixel interval PD' and pixel size, Therefore, it becomes a factor which reduces the yield in the process. In other words, in order to form the pattern 14 obliquely with a fine pixel pitch PD', it is necessary to use the mask 10' of a relatively thin thickness.

特別是，為了實現UHD級別的高解析度，如圖8的（b）所示，只有使用具有20μm以下厚度T2的薄的掩模10'，才能進行細微的圖案化。此外，為了實現UHD以上的超高解析度，可考慮使用具有10μm厚度T2的薄掩模10'。In particular, in order to achieve high resolution at the UHD level, as shown in FIG. 8( b ), fine patterning can be performed only by using a thin mask 10 ′ having a thickness T2 of 20 μm or less. In addition, in order to achieve ultra-high resolution above UHD, it may be considered to use a thin mask 10' having a thickness T2 of 10 μm.

然而，如果掩模10'的厚度過於變薄，則將掩模10'焊接在框架200時，存在作為焊接媒介的焊珠不能充分生成的問題。如果焊珠生成不充分，則掩模10'與框架200的附著強度降低，甚至會發生附著失敗的情形。However, if the thickness of the mask 10 ′ is too thin, there is a problem that the welding beads serving as the welding medium cannot be sufficiently generated when the mask 10 ′ is welded to the frame 200 . If the welding beads are not sufficiently generated, the adhesion strength between the mask 10 ′ and the frame 200 will decrease, and even the adhesion failure may occur.

因此，本發明為了解決如上所述的問題，提出一種包括能夠充分地生成焊珠的掩模100的掩模支撐模板。作為掩模100的焊接目標的虛擬部DM或者焊接部WP的部分可具有大於形成有掩模圖案P的掩模單元C或者掩模單元部CG的厚度。由此，通過在較厚部分生成充分數量的焊珠並提供，從而可確保焊接強度、附著強度。以下將具體說明。Therefore, in order to solve the above-mentioned problems, the present invention proposes a mask support template including a mask 100 capable of sufficiently generating solder beads. The part of the dummy part DM or the welding part WP which is the welding target of the mask 100 may have a thickness larger than that of the mask cell C or the mask cell part CG in which the mask pattern P is formed. Thereby, by generating and supplying a sufficient number of beads in the thick portion, the welding strength and the adhesion strength can be ensured. It will be described in detail below.

圖9是示出本發明的一實施例涉及的掩模100的示意圖。FIG. 9 is a schematic diagram showing a mask 100 according to an embodiment of the present invention.

掩模100可包括形成有多個掩模圖案P的掩模單元C及掩模單元C周圍的虛擬部DM。如上所述，利用壓延工藝，電鑄等生成的金屬片材可製造掩模100，掩模100中可形成有一個單元C。虛擬部DM與除單元C以外的掩模膜110[掩模金屬膜110]部分對應，且可以只包括掩模膜110，或者包括形成有類似於掩模圖案P形態的預定的虛擬部圖案的掩模膜110。虛擬部DM對應掩模100的邊緣且虛擬部DM的一部分或者全部可附著在框架200[掩模單元片材部220]。The mask 100 may include a mask cell C in which a plurality of mask patterns P are formed, and dummy portions DM around the mask cell C. As shown in FIG. As described above, the mask 100 may be fabricated from a metal sheet produced by a rolling process, electroforming, or the like, and one cell C may be formed in the mask 100 . The dummy portion DM corresponds to the part of the mask film 110 [mask metal film 110 ] other than the cell C, and may include only the mask film 110 , or a dummy portion pattern formed with a predetermined pattern similar to the mask pattern P. mask film 110 . The dummy part DM corresponds to the edge of the mask 100 and a part or the whole of the dummy part DM may be attached to the frame 200 [mask unit sheet part 220 ].

掩模100可使用由壓延（rolling）工藝生成的金屬片材（sheet）。掩模100可為熱膨脹係數約為1.0X10-6 /℃的因瓦合金（invar），膨脹係數約為1.0X10-7 /℃的超因瓦合金（super invar）材料。該材料的掩模100由於熱膨脹係數十分低因此很少存在因熱能導致掩模的圖案變形的憂慮，進而在高解析度OLED製造中可作為FMM（Fine Metal Mask）、陰影掩模（Shadow Mask）使用。除此之外，考慮到最近開發的在溫度變化值不大的範圍內執行像素沉積工藝的技術，掩模100也可以是熱膨脹係數略大於此的鎳（Ni）、鎳-鈷（Ni-Co）等材料。The mask 100 may use a metal sheet produced by a rolling process. The mask 100 may be an invar with a thermal expansion coefficient of about 1.0×10 −6 /°C, and a super invar material with an expansion coefficient of about 1.0×10 −7 /°C. The mask 100 made of this material has a very low thermal expansion coefficient, so there is little concern that the pattern of the mask will be deformed due to thermal energy, and can be used as FMM (Fine Metal Mask) and shadow mask (Shadow Mask) in the manufacture of high-resolution OLEDs. use. In addition to this, considering the recently developed technology for performing the pixel deposition process within a range of a small temperature change value, the mask 100 may also be made of nickel (Ni), nickel-cobalt (Ni-Co) having a thermal expansion coefficient slightly larger than this. ) and other materials.

由壓延工藝製造的金屬片材基於製造工藝可具有數十至數百μm的厚度。為了將後述的掩模圖案P細微地形成，這種程度的比較厚的金屬片材有必要以更薄的厚度製造。在金屬片材上使用CMP等方法可進一步執行將厚度製成50μm以下，例如，20~50μm左右厚度的工藝。The metal sheet produced by the calendering process may have a thickness of tens to hundreds of μm depending on the manufacturing process. In order to finely form the later-described mask pattern P, it is necessary to manufacture a metal sheet having such a relatively thick thickness with a thinner thickness. Using a method such as CMP on the metal sheet, a process of making the thickness less than 50 μm, for example, about 20 to 50 μm, can be further performed.

當使用由壓延工藝製造的金屬片材時，在厚度層面上，雖然存在厚度大於由電鑄形成的鍍膜厚度的問題，但是由於具有較低的熱膨脹係數（CTE，Coefficient of Thermal Expansion），因此無需額外進行熱處理工藝，且具有耐腐蝕性高的優點。When using a metal sheet produced by a calendering process, in terms of thickness, although there is a problem that the thickness is larger than that of the coating formed by electroforming, due to its low coefficient of thermal expansion (CTE, Coefficient of Thermal Expansion), it is not necessary to The heat treatment process is additionally performed, and it has the advantage of high corrosion resistance.

另外，優選使用由壓延工藝生成的金屬片材，但不限於此，也可以使用由電鑄（electroforming）生成的金屬片材。此時，通過進一步執行熱處理工藝，可降低電鑄片材的熱膨脹係數。作為電鑄的陰極（cathode）電極使用的基材可為導電性材料。特別是，金屬由於金屬氧化物，多結晶由於夾雜物的晶界導致不能向陰極均勻地引入電磁場，使鍍金金屬片材的一部分不均勻地形成，因此可使用單晶材料的母板（或者陰極）。特別是，可以為單晶矽材料，也可以使用Ti、Cu、Ag等金屬，GaN、SiC、GaAs、GaP、AlN、InN、InP、Ge等半導體，石墨（graphite），石墨烯（graphene）等碳系材料，包含CH3 NH3 PbCl3 ，CH3 NH3 PbBr3 ，CH3 NH3 PbI3 ，SrTiO3 等的鈣鈦礦（perovskite）結構等的超導體用單晶陶瓷，航空器部件用單晶超耐熱合金等。為了具有導電性，可進行部分摻雜或全部摻雜。對於單晶材料，由於沒有缺陷，電鑄時由於可在表面全部形成均勻的電磁場，因此生成均勻的金屬片材，基於此製造的框架一體型掩模100、200可進一步改善OLED像素的畫質水準。In addition, it is preferable to use a metal sheet produced by a rolling process, but it is not limited to this, and a metal sheet produced by electroforming may also be used. At this time, by further performing the heat treatment process, the thermal expansion coefficient of the electroformed sheet can be reduced. The substrate used as a cathode electrode for electroforming may be a conductive material. In particular, metal oxides and polycrystals cannot introduce an electromagnetic field uniformly to the cathode due to the grain boundaries of inclusions, so that a part of the gold-plated metal sheet is formed unevenly, so a single crystal material mother board (or cathode) can be used. ). In particular, it may be a single-crystal silicon material, or metals such as Ti, Cu, and Ag, semiconductors such as GaN, SiC, GaAs, GaP, AlN, InN, InP, and Ge, graphite, graphene, etc. Carbon-based materials, single crystal ceramics for superconductors including perovskite structures such as CH 3 NH 3 PbCl 3 , CH 3 NH 3 PbBr 3 , CH 3 NH 3 PbI 3 , SrTiO 3 , etc., and single crystals for aircraft parts Super heat-resistant alloys, etc. Partial or complete doping may be performed in order to have conductivity. For single crystal materials, since there are no defects, a uniform electromagnetic field can be formed on the entire surface during electroforming, so a uniform metal sheet is generated. The frame-integrated masks 100 and 200 manufactured based on this can further improve the image quality of OLED pixels. level.

在使用壓延、電鑄及其他成膜工藝製造的金屬片材上可形成掩模圖案P。通過採用在金屬片材上利用光刻法的蝕刻工藝可形成掩模圖案P。除此之外，可進一步使用雷射蝕刻工藝等的圖案形成工藝。掩模圖案P能夠以小於40μm的寬度形成。The mask pattern P may be formed on the metal sheet manufactured using calendering, electroforming, and other film forming processes. The mask pattern P may be formed by employing an etching process using photolithography on a metal sheet. In addition to this, a pattern forming process such as a laser etching process can be further used. The mask pattern P can be formed with a width of less than 40 μm.

掩模100可具有焊接部WP。焊接部WP可以指基於雷射L照射可生成焊珠WB的目標區域。焊接部WP可相當於掩模100的邊緣或者虛擬部DM部分中的至少一部分區域。焊接部WP可位於掩模100的四個邊緣部分，相面對的兩個邊緣部分等。需要指出的是，以下假設多個焊接部WP以具有一定間隔地佈置在掩模100的虛擬部DM區域，且焊接部WP大體上具有圓形形狀，並以此進行說明，但並非一定受限於此。The mask 100 may have a welding portion WP. The weld portion WP may refer to a target area where the weld bead WB can be generated based on the laser L irradiation. The welding portion WP may correspond to at least a partial area of the edge of the mask 100 or the dummy portion DM. The welding parts WP may be located on four edge portions of the mask 100, two facing edge portions, and the like. It should be pointed out that the following description assumes that a plurality of welding parts WP are arranged in the dummy part DM region of the mask 100 with a certain interval, and the welding part WP has a substantially circular shape, and the description is based on this, but it is not necessarily limited. here.

本發明的掩模100中作為焊接目標的虛擬部DM或者焊接部WP的部分的厚度可大於形成有掩模圖案P的掩模單元C。虛擬部DM或者焊接部WP的部分的厚度優選地可約為10μm以上，作為一例可約為10~30μm。此外，掩模單元C部分的厚度在小於虛擬部DM或者焊接部WP部分的厚度的範圍內，可約為5~18μm。In the mask 100 of the present invention, the thickness of the portion of the dummy portion DM or the welding portion WP that is the target of welding may be larger than the mask cell C in which the mask pattern P is formed. The thickness of the portion of the dummy portion DM or the welding portion WP may preferably be approximately 10 μm or more, and may be approximately 10 to 30 μm as an example. In addition, the thickness of the mask unit C portion may be about 5 to 18 μm within a range smaller than the thickness of the dummy portion DM or the welding portion WP portion.

由於框架200具有多個掩模單元區域CR（CR11~CR56），因此還可具有多個掩模100，所述掩模100具有與每個掩模單元區域CR（CR11~CR56）對應的掩模單元C（C11~C56）。Since the frame 200 has a plurality of mask unit regions CR ( CR11 to CR56 ), it may also have a plurality of masks 100 having a mask corresponding to each of the mask unit regions CR ( CR11 to CR56 ) Unit C (C11~C56).

由於掩模100的一面101是在OLED像素沉積工藝中與對象基板900[參照圖20]的接觸面，因此優選為平坦的面。此外，在掩模100的另一面，虛擬部DM的面102和掩模單元C的面103基於虛擬部DM與掩模單元C的厚度差異可形成段差或者圓形。掩模100的一面101是與後述的模板50的一面相對的面。Since the one surface 101 of the mask 100 is the contact surface with the target substrate 900 [refer to FIG. 20 ] in the OLED pixel deposition process, it is preferably a flat surface. In addition, on the other surface of the mask 100, the surface 102 of the dummy portion DM and the surface 103 of the mask unit C may form a level difference or a circle based on the difference in thickness between the dummy portion DM and the mask unit C. One surface 101 of the mask 100 is the surface facing the one surface of the template 50 to be described later.

以下，對通過將製造的掩模金屬膜110支撐在模板50上並製造掩模100，將支撐有掩模100的模板50裝載在框架200上，將掩模100附著在框架200上，並製造框架一體型掩模的一系列的工藝進行說明。Next, by supporting the fabricated mask metal film 110 on the template 50 and fabricating the mask 100, the template 50 supporting the mask 100 is mounted on the frame 200, the mask 100 is attached to the frame 200, and the fabrication A series of processes for the frame-integrated mask will be described.

圖10至圖12是示出本發明的一實施例涉及的在模板50上黏合掩模金屬膜110並形成掩模100進而製造掩模支撐模板的過程的示意圖。FIGS. 10 to 12 are schematic diagrams illustrating a process of adhering the mask metal film 110 on the template 50 and forming the mask 100 to manufacture the mask support template according to an embodiment of the present invention.

首先，可準備掩模金屬膜110。作為一實施例，可由壓延方式準備掩模金屬膜110。First, the mask metal film 110 may be prepared. As an example, the mask metal film 110 may be prepared by rolling.

然後，參照圖10的（a），可提供模板50（template）。模板50是一種媒介，其一面上附著有掩模100並以支撐掩模100的狀態移動掩模100。模板50的一面優選為平坦面以支撐並搬運平坦的掩模100。中心部50a可對應掩模金屬膜110的掩模單元C，邊緣部50b可對應掩模金屬膜110的虛擬部DM。為了能夠整體上支撐掩模金屬膜110，模板50的面積大於掩模金屬膜110的面積，且可為平坦形狀。Then, referring to (a) of FIG. 10 , a template 50 (template) may be provided. The template 50 is a medium on which the mask 100 is attached and moves the mask 100 in a state of supporting the mask 100 . One surface of the template 50 is preferably a flat surface to support and carry the flat mask 100 . The central portion 50 a may correspond to the mask unit C of the mask metal film 110 , and the edge portion 50 b may correspond to the dummy portion DM of the mask metal film 110 . In order to be able to support the mask metal film 110 as a whole, the area of the template 50 is larger than that of the mask metal film 110 and may be in a flat shape.

模板50優選為透明材料以便於在將掩模100與框架200對準並附著的過程中進行視覺（vision）觀察等。此外，採用透明材料時，也可使雷射穿過。作為透明的材料可使用玻璃（glass）、矽膠（silica）、耐熱玻璃，石英（quartz），氧化鋁（Al2 O3 ）、硼矽酸鹽玻璃（borosilicate glass）、氧化鋯（zirconia）等材料。作為一例，模板50可使用硼矽酸鹽玻璃中具有優異的耐熱性、化學耐久性、機械強度、透明性等的BOROFLOAT® 33材料。此外，BOROFLOAT® 33的熱膨脹係數約為3.3，熱膨脹係數與因瓦合金掩模金屬膜110相差很小，具有容易控制掩模金屬膜110的優點。The template 50 is preferably a transparent material to facilitate visual observation and the like during the alignment and attachment of the mask 100 with the frame 200 . In addition, when transparent materials are used, the laser can also be passed through. As the transparent material, glass, silica gel, heat-resistant glass, quartz, alumina (Al 2 O 3 ), borosilicate glass, zirconia and the like can be used . As an example, the template 50 can use BOROFLOAT ® 33 material which is excellent in heat resistance, chemical durability, mechanical strength, transparency, etc. among borosilicate glass. In addition, the thermal expansion coefficient of BOROFLOAT ® 33 is about 3.3, and the thermal expansion coefficient differs very little from that of the Invar mask metal film 110 , which has the advantage of being easy to control the mask metal film 110 .

另外，為了防止與掩模金屬膜110[或者掩模100]的分界之間發生氣隙（air gap），模板50與掩模金屬膜110接觸的一面可為鏡面。考慮到這一點，模板50的一面的表面粗糙度Ra可為100nm以下。為了實現表面粗糙度Ra為100nm以下的模板50，模板50可使用晶圓（wafer）。晶圓（wafer）其表面粗糙度Ra約為10nm左右，市面上具有很多產品，表面處理工藝廣為所知，因此可作為模板50使用。由於模板50的表面粗糙度Ra為nm級別，因此可為沒有氣隙或者幾乎沒有氣隙的水準，從而基於雷射焊接容易生成焊珠WB，對掩模圖案P的對準誤差不產生影響。In addition, in order to prevent the occurrence of an air gap between the boundary with the mask metal film 110 [or the mask 100 ], the surface of the template 50 in contact with the mask metal film 110 may be a mirror surface. Taking this into consideration, the surface roughness Ra of one surface of the template 50 may be 100 nm or less. In order to realize the template 50 having a surface roughness Ra of 100 nm or less, a wafer may be used for the template 50 . The surface roughness Ra of a wafer is about 10 nm. There are many products on the market, and the surface treatment process is widely known, so it can be used as the template 50 . Since the surface roughness Ra of the stencil 50 is on the nm level, it can be a level with no or almost no air gaps, so that the beads WB are easily generated by laser welding, and the alignment error of the mask pattern P is not affected.

為了使從模板50的上部照射的雷射L能夠到達掩模100的焊接部WP（執行焊接的區域），模板50上可形成有雷射貫穿孔51。雷射貫穿孔51能夠以與焊接部WP的位置和數量對應的方式形成在模板50上。由於在掩模100的邊緣或者虛擬部DM部分上以預定的間隔佈置多個焊接部WP，因此雷射貫穿孔51也與之對應地以預定間隔形成多個。作為一例，由於在掩模100的兩側（左側/右側）虛擬部DM部分上以預定間隔佈置多個焊接部WP，因此雷射貫穿孔51也可以在模板50的兩側（左側/右側）以預定間隔可形成多個。In order to allow the laser beam L irradiated from the upper portion of the template 50 to reach the welding portion WP (region where welding is performed) of the mask 100 , a laser through hole 51 may be formed in the template 50 . The laser penetration holes 51 can be formed in the template 50 in a manner corresponding to the position and number of the welding portions WP. Since a plurality of welding portions WP are arranged at predetermined intervals on the edge of the mask 100 or on the dummy portion DM portion, a plurality of the laser penetration holes 51 are also formed at predetermined intervals corresponding thereto. As an example, since a plurality of welding portions WP are arranged at predetermined intervals on the dummy portion DM on both sides (left/right) of the mask 100 , the laser through holes 51 may be located on both sides (left/right) of the template 50 . A plurality of them may be formed at predetermined intervals.

雷射貫穿孔51不必一定與焊接部WP的位置和數量對應。例如，也可以僅對雷射貫穿孔51中的一部分進行雷射L照射，並進行焊接。此外，與焊接部WP不對應的雷射貫穿孔51中的一部分在對準掩模100與模板50時也可以代替對準標記而使用。假設，模板50的材料對於雷射L的光透明，則也可以不形成雷射貫穿孔51。The laser penetration holes 51 do not necessarily correspond to the positions and numbers of the welding portions WP. For example, only a part of the laser penetration hole 51 may be irradiated with the laser light L and welded. In addition, a part of the laser through-holes 51 not corresponding to the welding portion WP may be used instead of the alignment marks when aligning the mask 100 and the template 50 . Assuming that the material of the template 50 is transparent to the light of the laser L, the laser penetration hole 51 may not be formed.

模板50的一面可形成臨時黏合部55。掩模100附著在框架200之前，臨時黏合部55可使掩模100[或者掩模金屬膜110]臨時附著在模板50的一面並支撐在模板50上。One side of the template 50 may form a temporary bonding portion 55 . Before the mask 100 is attached to the frame 200 , the temporary adhesive portion 55 can temporarily attach the mask 100 [or the mask metal film 110 ] to one side of the template 50 and support the template 50 .

臨時黏合部55可使用基於加熱可分離的黏合劑或者黏合片材（thermal release type），基於照射UV可分離的黏合劑或者黏合片材（UV release type）。The temporary adhesive part 55 may use a heat-based releasable adhesive or an adhesive sheet (thermal release type), a UV-irradiated-based releasable adhesive or an adhesive sheet (UV release type).

作為一例，臨時黏合部55可使用液蠟（liquid wax）。液蠟可使用與半導體晶圓的拋光步驟等中使用的相同的蠟，其類型沒有特別限制。作為主要用於控制與維持力有關的黏合力、耐衝擊性等的樹脂成分，液蠟可包括如丙烯酸、醋酸乙烯酯，尼龍及各種聚合物的物質及溶劑。作為一例，臨時黏合部55可使用包括作為樹脂成分的丁腈橡膠（ABR，Acrylonitrile butadiene rubber），作為溶劑成分的n-丙醇的SKYLIQUID ABR-4016。在臨時黏合部55上使用旋塗方法形成液蠟。As an example, liquid wax may be used for the temporary adhesive portion 55 . As the liquid wax, the same wax used in the polishing step of the semiconductor wafer and the like can be used, and the type thereof is not particularly limited. As a resin component mainly used for controlling adhesion, impact resistance, etc. related to holding force, the liquid wax may include substances and solvents such as acrylic acid, vinyl acetate, nylon, and various polymers. As an example, SKYLIQUID ABR-4016 containing nitrile butadiene rubber (ABR) as a resin component and n-propanol as a solvent component can be used for the temporary adhesive portion 55 . Liquid wax is formed on the temporary adhesive portion 55 using a spin coating method.

作為液蠟的臨時黏合部55在高於85℃~100℃的溫度下黏性下降，在低於85℃的溫度下黏性增加，一部分可如固體固化，從而可將掩模金屬膜110與模板50固定黏合。The temporary adhesive portion 55 serving as liquid wax decreases in viscosity at a temperature higher than 85° C. to 100° C., increases in viscosity at a temperature lower than 85° C., and partially solidifies as a solid, so that the mask metal film 110 and the The template 50 is fixedly glued.

然後，參照圖10的（b），可在模板50上黏合掩模金屬膜110。將液蠟加熱至85℃以上，將掩模金屬膜110接觸到模板50上之後，使掩模金屬膜110和模板50通過滾軸之間從而執行黏合。Then, referring to (b) of FIG. 10 , the mask metal film 110 may be bonded on the template 50 . After the liquid wax is heated to 85° C. or more and the mask metal film 110 is brought into contact with the template 50 , the mask metal film 110 and the template 50 are passed between rollers to perform bonding.

根據一實施例，在模板50上約以120℃烘焙（baking）60秒，將臨時黏合部55的溶劑氣化後，可立即執行掩模金屬膜層壓（lamination）工藝。層壓通過在一面上形成有臨時黏合部55的模板50上裝載掩模金屬膜110並使其通過約100℃的上部滾軸（roll）和約0℃的下部滾軸之間來執行。其結果，掩模金屬膜110可與模板50接觸且中間夾設有臨時黏合部55。According to one embodiment, after baking the template 50 at about 120° C. for 60 seconds, and vaporizing the solvent of the temporary adhesive portion 55 , a lamination process of the mask metal film may be performed immediately. Lamination is performed by loading the mask metal film 110 on the template 50 with the temporary adhesive portion 55 formed on one side and passing it between an upper roll at about 100°C and a lower roll at about 0°C. As a result, the mask metal film 110 can be in contact with the template 50 with the temporary adhesive portion 55 interposed therebetween.

圖13是示出本發明的一實施例涉及的臨時黏合部55的放大截面示意圖。作為又一例，臨時黏合部55可使用熱剝離膠帶（thermal release tape）。熱剝離膠帶的中間佈置有PET膜等芯膜56（core film），芯膜56的兩面上佈置有可熱剝離的黏合層57a、57b（thermal release adhesive），黏合層57a、57b的外輪廓可為佈置有剝離膜/離型膜58a、58b的形態。其中，佈置在芯膜56的兩面上的黏合層57a、57b的相互剝離溫度可相互不同。FIG. 13 is an enlarged schematic cross-sectional view showing the temporary adhesive portion 55 according to an embodiment of the present invention. As yet another example, thermal release tape may be used for the temporary adhesive portion 55 . A core film 56 (core film) such as a PET film is arranged in the middle of the thermal release tape, and thermal release adhesive layers 57a and 57b (thermal release adhesive) are arranged on both sides of the core film 56. The outer contours of the adhesive layers 57a and 57b can be It is a form in which release films/release films 58a and 58b are arranged. Here, the mutual peeling temperatures of the adhesive layers 57a, 57b arranged on both sides of the core film 56 may be different from each other.

根據一實施例，在去除剝離膜/離型膜58a、58b的狀態下，熱剝離膠帶的下部面[第二黏合層57b]黏合在模板50上，熱剝離膠帶的上部面[第一黏合層57a]可黏合在掩模金屬膜110上。由於第一黏合層57a和第二黏合層57b具有相互不同的剝離溫度，因此，後述的圖18中將模板50從掩模100分離時，通過施加使第一黏合層57a剝離的熱，掩模100可從模板50和臨時黏合部55分離。According to one embodiment, with the release film/release film 58a, 58b removed, the lower surface of the thermal release tape [the second adhesive layer 57b] is adhered to the template 50, and the upper surface of the thermal release tape [the first adhesive layer] 57a] may be bonded on the mask metal film 110. Since the first adhesive layer 57a and the second adhesive layer 57b have different peeling temperatures from each other, when the stencil 50 is separated from the mask 100 in FIG. 18 to be described later, by applying heat for peeling the first adhesive layer 57a, the mask is removed. 100 is detachable from template 50 and temporary adhesive 55 .

另外，由壓延工藝製造的金屬片材基於製造工藝可具有數十至數百μm的厚度。如前面在圖8中所述，為了得到UHD級別的高解析度只有使用具有20μm以下厚度的薄掩模金屬膜110才能進行細微的圖案化，為了獲得UHD以上的超高解析度，需要使用具有10μm厚度的薄掩模金屬膜110。然而，由壓延（rolling）工藝生成的掩模金屬膜110'具有約為25~500μm的厚度，因此有必要將厚度縮小。In addition, the metal sheet manufactured by the rolling process may have a thickness of several tens to several hundreds of μm based on the manufacturing process. As previously described in FIG. 8 , in order to obtain high resolution at the UHD level, only a thin mask metal film 110 with a thickness of 20 μm or less can be used for fine patterning. A thin mask metal film 110 with a thickness of 10 μm. However, the mask metal film 110 ′ produced by the rolling process has a thickness of about 25˜500 μm, so it is necessary to reduce the thickness.

因此，如圖10的（b'）所示，作為另一實施例，可進一步執行對掩模金屬膜110'的一面進行平坦化PS的工藝。其中，平坦化PS是指對掩模金屬膜110'的一面（上面）進行鏡面化的同時，通過部分地去除掩模金屬膜110'的上部，使厚度變薄。平坦化PS可利用CMP（Chemical Mechanical Polishing）方法執行，只要是公知的CMP方法，可不受限制地使用。此外，利用化學濕式蝕刻（chemical wet etching）或者乾式蝕刻（dry etching）方法可使掩模金屬膜110'的厚度變薄。除此之外，可不受限制地使用使掩模金屬膜110'的厚度變薄的平坦化的工藝。Therefore, as shown in (b') of FIG. 10 , as another embodiment, a process of planarizing PS on one side of the mask metal film 110 ′ may be further performed. Here, the planarization PS refers to mirroring one side (upper surface) of the mask metal film 110 ′ and partially removing the upper part of the mask metal film 110 ′ to reduce the thickness. The planarization PS can be performed by a CMP (Chemical Mechanical Polishing) method, and any known CMP method can be used without limitation. In addition, the thickness of the mask metal film 110 ′ can be reduced by chemical wet etching or dry etching. In addition to this, a planarization process for thinning the thickness of the mask metal film 110 ′ may be used without limitation.

在執行平坦化PS的過程中，作為一例，在CMP過程中，可控制掩模金屬膜110'上部面的表面粗糙度Ra。優選地，可執行用於進一步減小表面粗糙度的鏡面化。或者，作為另一例子，還可以通過化學濕式蝕刻或者乾式蝕刻過程進行平坦化PS之後，再附加進行額外的CMP工藝等拋光工藝以減小表面粗糙度Ra。In the process of performing the planarization PS, as an example, in the CMP process, the surface roughness Ra of the upper surface of the mask metal film 110 ′ can be controlled. Preferably, mirroring for further reducing the surface roughness can be performed. Or, as another example, after planarizing PS through chemical wet etching or dry etching process, an additional polishing process such as CMP process may be additionally performed to reduce the surface roughness Ra.

如此，可將掩模金屬膜110'製成約50μm以下較薄的厚度。基於此掩模金屬膜110的厚度可製成約20μm至50μm左右。然而，並不一定受限於此。In this way, the mask metal film 110 ′ can be made thinner than about 50 μm. Based on this, the thickness of the mask metal film 110 can be about 20 μm to 50 μm. However, it is not necessarily limited to this.

對於由電鑄工藝生成的掩模金屬膜110，其厚度可薄於由壓延工藝生成的掩模金屬膜110。基於此雖然還可以省略用於縮減厚度的平坦化PS工藝，但基於掩模金屬膜110的表面層的組分、結晶結構/細微結構的不同可具有不同蝕刻特徵，因此可通過進一步進行平坦化PS來控制表面特性、厚度。The thickness of the mask metal film 110 produced by the electroforming process may be thinner than that of the mask metal film 110 produced by the calendering process. Based on this, although the planarization PS process for reducing the thickness can also be omitted, the surface layer of the mask metal film 110 may have different etching characteristics due to the difference in the composition, crystal structure/microstructure of the surface layer, so further planarization can be performed by PS to control surface properties, thickness.

然後，參照圖11的（c），掩模金屬膜110的邊緣上可形成有第一絕緣部23。第一絕緣部23優選形成於圖9中詳細說明的將作為掩模100的虛擬部DM區域的部分上。換而言之，在掩模金屬膜110的掩模單元部CG除外的剩餘區域上可形成第一絕緣部23。其中，掩模單元部CG應理解為與框架200中形成的掩模單元區域CR具有不同的概念，如果生成掩模圖案P，則掩模單元部CG可作為掩模單元C的區域。或者，第一絕緣部23也可以形成在與掩模金屬膜110的焊接部WP對應的區域上。第一絕緣部23可由光刻膠材料通過印刷法等形成。Then, referring to (c) of FIG. 11 , the first insulating portion 23 may be formed on the edge of the mask metal film 110 . The first insulating portion 23 is preferably formed on a portion that will be the dummy portion DM region of the mask 100 described in detail in FIG. 9 . In other words, the first insulating portion 23 may be formed on the remaining region except the mask cell portion CG of the mask metal film 110 . The mask unit part CG should be understood as having a different concept from the mask unit area CR formed in the frame 200 , and if the mask pattern P is generated, the mask unit part CG can be used as the area of the mask unit C. Alternatively, the first insulating portion 23 may be formed in a region corresponding to the welding portion WP of the mask metal film 110 . The first insulating portion 23 may be formed of a photoresist material by a printing method or the like.

然後，參照圖11的（d），在除了形成有第一絕緣部23的部分以外的掩模金屬膜110的露出部分[或者掩模單元部CG]上可執行蝕刻EC。可不受限制地使用乾式蝕刻、濕式蝕刻等方法，進行蝕刻的結果，掩模金屬膜110的露出部分[或者掩模單元部CG]被蝕刻，從而可縮減厚度。Then, referring to (d) of FIG. 11 , etching EC may be performed on the exposed portion of the mask metal film 110 [or the mask cell portion CG] other than the portion where the first insulating portion 23 is formed. Dry etching, wet etching, or the like can be used without limitation, and as a result of the etching, the exposed portion of the mask metal film 110 [or the mask cell portion CG] is etched, so that the thickness can be reduced.

然後，參照圖11的（e），可去除第一絕緣部23。隨著掩模單元部CG被蝕刻且厚度縮減，基於虛擬部DM的面102[或者焊接部WP的面]與掩模單元部CG的面103的厚度差可出現段差或者圓形。Then, referring to FIG. 11( e ), the first insulating portion 23 may be removed. As the mask unit portion CG is etched and the thickness is reduced, a level difference or a circle may occur based on the thickness difference between the surface 102 of the dummy portion DM [or the surface of the welding portion WP] and the surface 103 of the mask unit portion CG.

然後，參照圖12的（f），在厚度縮減的掩模單元部CG上可進一步執行粗糙度縮小處理TP。粗糙度縮小處理TP可以是在掩模單元部CG上進行觸摸拋光（touch polishing）的處理。厚度縮減的掩模單元部CG的表面因蝕刻形成細微的凹凸，從而可以是具有較高粗糙度的狀態。其中，如果執行觸摸拋光TP，則掩模單元部CG的表面粗糙度Ra優選小於0.1μm。以表面粗糙度Rz為基準，可小於1.0μm。Then, referring to (f) of FIG. 12 , the roughness reduction process TP may be further performed on the thickness-reduced mask unit portion CG. The roughness reduction process TP may be a process of performing touch polishing on the mask unit portion CG. The surface of the mask unit portion CG with a reduced thickness is formed with fine irregularities by etching, and can be in a state of high roughness. Among them, if the touch polishing TP is performed, the surface roughness Ra of the mask unit portion CG is preferably less than 0.1 μm. Based on the surface roughness Rz, it can be less than 1.0 μm.

圖14是本發明一實施例涉及的掩模的局部的放大截面示意圖。參照圖14說明在圖12的（f）步驟中觸摸拋光TP可行的理由。FIG. 14 is a partially enlarged schematic cross-sectional view of a mask according to an embodiment of the present invention. The reason why the touch polishing TP is possible in the step (f) of FIG. 12 will be described with reference to FIG. 14 .

掩模單元部CG位於掩模金屬膜110的中心，掩模單元部CG的外部輪廓部分可為虛擬部DM。虛擬部DM中用於佈置焊接部WP的部分以厚度T1形成，掩模單元部CG因厚度縮減能夠以厚度T2形成。掩模單元部CG與虛擬部DM或者焊接部WP的厚度差可具有T1-T2的值。此外，假設焊接部WP的寬度為W1，除焊接部WP以外的虛擬部DM部分的寬度為W2，則W1與W2的分界處顯示基於圖11的（d）的蝕刻EC的圓形部分。具有W2寬度的虛擬部DM部分與掩模單元部CG可幾乎呈水平連接。The mask unit part CG is located at the center of the mask metal film 110, and the outer contour part of the mask unit part CG may be a dummy part DM. A portion of the dummy portion DM for arranging the welding portion WP is formed with a thickness T1, and the mask cell portion CG can be formed with a thickness T2 due to the reduction in thickness. The difference in thickness between the mask cell part CG and the dummy part DM or the welding part WP may have a value of T1-T2. Further, assuming that the width of the welded portion WP is W1 and the width of the dummy portion DM other than the welded portion WP is W2, the boundary between W1 and W2 shows a circular portion based on the etching EC of FIG. 11( d ). The dummy portion DM portion having the width of W2 and the mask cell portion CG may be connected almost horizontally.

其中，如果計算從掩模單元部CG與虛擬部DM的分界至焊接部WP的角部的端部的任意的直線與水平行線形成的角度a1，則角度a1約為0.057°至1.432°左右。作為一例，當焊接部WP的厚度T1為15μm且掩模單元部CG的厚度T2為13μm時，厚度差為最小，除焊接部WP以外的虛擬部DM部分的寬度W2為2000μm時，根據[a1（°）=arctan（2/2000）=0.057]的推算。角度a1具有最小值。此外，焊接部WP的厚度T1為30μm且掩模單元部CG的厚度T2為5μm時，厚度差為最大，除焊接部WP以外的虛擬部DM部分的寬度W2為1000μm時，根據[a1（°）=arctan（25/1000）=1.432]的推算，角度a1具有最大值。However, if the angle a1 formed by an arbitrary straight line from the boundary between the mask cell portion CG and the dummy portion DM to the end of the corner portion of the welding portion WP and the horizontal line is calculated, the angle a1 is about 0.057° to 1.432°. . As an example, when the thickness T1 of the welding portion WP is 15 μm and the thickness T2 of the mask unit portion CG is 13 μm, the thickness difference is the smallest, and the width W2 of the dummy portion DM excluding the welding portion WP is 2000 μm, according to [a1 (°)=arctan(2/2000)=0.057]. The angle a1 has a minimum value. In addition, when the thickness T1 of the welding portion WP is 30 μm and the thickness T2 of the mask unit portion CG is 5 μm, the thickness difference is the largest, and when the width W2 of the dummy portion DM excluding the welding portion WP is 1000 μm, according to [a1 (° )=arctan(25/1000)=1.432], the angle a1 has the maximum value.

由於角度a1為約0.057°至1.432°左右範圍的十分小的角度，考慮到柔軟性（softness），即使在焊接部WP[或者，虛擬部DM]與掩模單元部CG之間存在段差，也可順場地進行觸摸拋光TP。因此，通過利用觸摸拋光TP使掩模單元部CG上的粗糙度縮減，從而在更加鏡面化的掩模單元部CG上可更加準確地對第二絕緣部25進行圖案化。換而言之，具有使第二絕緣部25在掩模單元部CG上準確地形成的優點。Since the angle a1 is a very small angle in the range of about 0.057° to 1.432°, even if there is a step difference between the welding portion WP [or, the dummy portion DM] and the mask unit portion CG in consideration of softness, the Touch polishing TP can be carried out along the venue. Therefore, by reducing the roughness on the mask unit portion CG by using the touch polishing TP, the second insulating portion 25 can be more accurately patterned on the more specular mask unit portion CG. In other words, there is an advantage of accurately forming the second insulating portion 25 on the mask cell portion CG.

進而，作為粗糙度縮小處理，在掩模單元部CG上可進一步執行形成光澤層（未圖示）的處理。如果形成光澤層，則光澤劑填充在細微凹凸的凹陷部分中,從而可使粗糙度縮減。光澤劑可包括過氧化氫（hydrogen peroxide）、氫氟酸（fluorhydric acid）等。隨著進一步縮減掩模單元部CG的粗糙度，可以在進一步被鏡面化的掩模單元部CG上準確地對第二絕緣部25進行圖案化。Furthermore, as the roughness reduction process, a process of forming a glossy layer (not shown) may be further performed on the mask unit portion CG. If a glossy layer is formed, the glossing agent fills in the concave portions of the fine concavities and convexities, so that the roughness can be reduced. Gloss agents may include hydrogen peroxide, fluorhydric acid, and the like. As the roughness of the mask cell portion CG is further reduced, the second insulating portion 25 can be accurately patterned on the mask cell portion CG further mirrored.

然後，參照圖12的（g），在掩模金屬膜110的掩模單元部CG上可形成圖案化的第二絕緣部25。第二絕緣部25利可用光刻膠材料以印刷法等形成。Then, referring to (g) of FIG. 12 , a patterned second insulating portion 25 may be formed on the mask cell portion CG of the mask metal film 110 . The second insulating portion 25 is formed by a printing method or the like using a photoresist material.

接下來，可執行掩模金屬膜110[或者掩模單元部CG]的蝕刻。可不受限制地使用乾式蝕刻、濕式蝕刻等方法，經蝕刻的結果，由絕緣部25之間的空白空間26露出的掩模金屬膜110部分可被蝕刻。掩模金屬膜110的蝕刻部分構成掩模圖案P，從而可製造包括形成有多個掩模圖案P的掩模單元C的掩模100。Next, etching of the mask metal film 110 [or the mask cell portion CG] may be performed. Dry etching, wet etching, etc. may be used without limitation, and as a result of the etching, the portion of the mask metal film 110 exposed by the blank space 26 between the insulating portions 25 may be etched. The etched portion of the mask metal film 110 constitutes the mask pattern P, so that the mask 100 including the mask unit C in which the plurality of mask patterns P are formed can be manufactured.

然後，參照圖12的（h），可通過去除第二絕緣部25來結束用於支撐掩模100的模板50的製造。Then, referring to (h) of FIG. 12 , the manufacture of the template 50 for supporting the mask 100 may be completed by removing the second insulating portion 25 .

由於框架200具有多個掩模單元區域CR（CR11~CR56），因此還可具有多個掩模100，所述掩模100具有與每個掩模單元區域CR（CR11~CR56）對應的掩模單元C（C11~C56）。此外，可具有多個模板50，其用於分別支撐每個掩模100。Since the frame 200 has a plurality of mask unit regions CR ( CR11 to CR56 ), it may also have a plurality of masks 100 having a mask corresponding to each of the mask unit regions CR ( CR11 to CR56 ) Unit C (C11~C56). In addition, there may be a plurality of templates 50 for supporting each mask 100, respectively.

圖15是示出本發明的另一實施例涉及的製造掩模支撐模板的過程的示意圖。FIG. 15 is a schematic diagram illustrating a process of manufacturing a mask support template according to another embodiment of the present invention.

另外，進行圖11的（e）步驟之後，不立即形成第二絕緣部25，可將掩模單元部CG厚度縮減的掩模金屬膜110從模板50分離。也可將分離的掩模金屬膜110裝載到另一第二模板60上並製造掩模支撐模板。In addition, after the step (e) of FIG. 11 is performed, the second insulating portion 25 is not formed immediately, and the mask metal film 110 having the reduced thickness of the mask cell portion CG can be separated from the template 50 . It is also possible to load the separated mask metal film 110 onto another second template 60 and manufacture a mask support template.

參照圖15的（a），進行圖11的（e）步驟之後，可向臨時黏合部55施加熱ET、超聲波US、紫外線UV或者進行化學處理CM。由此，可降低臨時黏合部55的黏性，黏合力等。Referring to (a) of FIG. 15 , after the step of (e) of FIG. 11 is performed, heat ET, ultrasonic waves US, ultraviolet UV, or chemical treatment CM may be applied to the temporary adhesive portion 55 . Thereby, the viscosity, adhesive force, etc. of the temporary adhesive part 55 can be reduced.

接下來，參照圖15的（b），可將掩模金屬膜110從模板50分離。Next, referring to (b) of FIG. 15 , the mask metal film 110 may be separated from the template 50 .

接下來，參照圖15的（c），在一面上形成有臨時黏合部65的第二模板60上可黏合掩模金屬膜110。第二模板60、雷射貫穿孔61、臨時黏合部65與模板50、雷射貫穿孔51、臨時黏合部55相同，因此省略詳細說明。Next, referring to FIG. 15( c ), the mask metal film 110 can be bonded to the second template 60 having the temporary bonding portion 65 formed on one side thereof. The second template 60 , the laser through holes 61 , and the temporary adhesive portion 65 are the same as the template 50 , the laser through holes 51 , and the temporary adhesive portion 55 , so detailed descriptions are omitted.

在第二模板60上黏合掩模金屬膜110之前，在掩模金屬膜110的一面101即與第二模板60接觸的面上可形成第三絕緣部27。第三絕緣部27可利用光刻膠材料以印刷法等形成。Before adhering the mask metal film 110 on the second template 60 , the third insulating portion 27 may be formed on one side 101 of the mask metal film 110 , that is, the side in contact with the second template 60 . The third insulating portion 27 may be formed by a printing method or the like using a photoresist material.

接下來，參照圖15的（d），可將掩模金屬膜110黏合在第二模板60上。由於掩模金屬膜110的一面101上形成有第三絕緣部27，因此掩模金屬膜110與第二模板60之間可夾設有第三絕緣部27。Next, referring to (d) of FIG. 15 , the mask metal film 110 may be adhered on the second template 60 . Since the third insulating portion 27 is formed on one side 101 of the mask metal film 110 , the third insulating portion 27 may be sandwiched between the mask metal film 110 and the second template 60 .

進行圖15的（d）步驟之後，如圖12的（f）和圖12的（g）步驟所示，可通過形成掩模圖案P執行製造掩模100的步驟。在執行形成掩模圖案P的蝕刻時，蝕刻液僅從掩模金屬膜110的一面（作為一例，上面）進入，並經過絕緣部25之間的空白空間26僅以一側方向為基準進行蝕刻較為有利。如果從兩面同時進行蝕刻，則可能很難實現所需的掩模圖案P的形態。因此，防止在掩模金屬膜110的另一面（作為一例，下面）進行蝕刻是十分重要的。圖15的實施例中第三絕緣部27位於掩模金屬膜110的下面。由此，防止蝕刻液進入掩模金屬膜110的另一面（後面），而僅在掩模金屬膜110的一面（上面）形成掩模圖案P的蝕刻工藝比較有利。After the step (d) of FIG. 15 is performed, the step of manufacturing the mask 100 may be performed by forming the mask pattern P as shown in the steps (f) and (g) of FIG. 12 . When performing the etching to form the mask pattern P, the etching solution enters only from one side (as an example, the upper side) of the mask metal film 110 , passes through the empty space 26 between the insulating portions 25 and etches only one side direction as a reference more favorable. If etching is performed simultaneously from both sides, it may be difficult to achieve the desired shape of the mask pattern P. Therefore, it is important to prevent etching from being performed on the other surface (as an example, the lower surface) of the mask metal film 110 . In the embodiment of FIG. 15 , the third insulating portion 27 is located under the mask metal film 110 . Therefore, the etching process in which the mask pattern P is formed only on one side (upper side) of the mask metal film 110 is advantageously prevented from entering the other side (rear side) of the mask metal film 110 .

圖16是示出本發明的一實施例涉及的將掩模支撐模板裝載在框架上的過程的示意圖。16 is a schematic diagram illustrating a process of loading a mask support template on a frame according to an embodiment of the present invention.

參照圖16，模板50可基於真空吸盤90移送。可用真空吸盤90吸附黏合有掩模100的模板50的面的反面並移送。真空吸盤90可與向x、y、z、θ軸移動的移動手段（未圖示）連接。此外，真空吸盤90可以與通過吸附模板50來進行翻轉（flip）的翻轉手段（未圖示）連接。如圖16的（b）所示，在真空吸盤90吸附模板50並翻轉後向框架200上移送模板50的過程中，同樣不影響掩模100的黏合狀態和對準狀態。Referring to FIG. 16 , the template 50 may be transferred based on the vacuum chuck 90 . The opposite surface of the surface to which the template 50 of the mask 100 is adhered can be sucked by the vacuum chuck 90 and transferred. The vacuum chuck 90 can be connected to a moving means (not shown) that moves in the x, y, z, and θ axes. In addition, the vacuum chuck 90 may be connected to a flipping means (not shown) for flipping the template 50 by suction. As shown in FIG. 16( b ), in the process of transferring the template 50 to the frame 200 after the vacuum chuck 90 sucks the template 50 and flips it, the adhesive state and alignment state of the mask 100 are also not affected.

圖17是示出本發明的一實施例涉及的將模板裝載在框架上並將掩模對應至框架的單元區域的狀態的示意圖。圖17中例舉了將一個掩模100對應/附著在單元區域CR上的方式，也可以進行將多個掩模100同時對應到所有的單元區域CR並將掩模100附著在框架200上的過程。這種情況下，可具有用於分別支撐多個掩模100的多個模板50。17 is a schematic diagram showing a state in which a template is loaded on a frame and a mask is assigned to a unit area of the frame according to an embodiment of the present invention. FIG. 17 exemplifies the method of corresponding/attaching one mask 100 to the unit region CR, but it is also possible to simultaneously correspond multiple masks 100 to all the unit regions CR and attach the masks 100 to the frame 200 process. In this case, there may be a plurality of templates 50 for supporting the plurality of masks 100, respectively.

然後，參照圖17，可將掩模100對應至框架200的一個掩模單元區域CR上。可通過將模板50裝載至框架200[或者掩模單元片材部220]來將掩模100對應至掩模單元區域CR上。控制模板50/真空吸盤90的位置的同時可通過顯微鏡觀察掩模100是否對應至掩模單元區域CR上。通過使模板50擠壓掩模100，從而使掩模100與框架200緊貼。Then, referring to FIG. 17 , the mask 100 may be corresponding to one mask unit region CR of the frame 200 . The mask 100 may be mapped onto the mask unit region CR by loading the template 50 on the frame 200 [or the mask unit sheet portion 220]. While controlling the position of the template 50/vacuum chuck 90, it can be observed through a microscope whether the mask 100 corresponds to the mask unit region CR. The mask 100 is brought into close contact with the frame 200 by pressing the template 50 against the mask 100 .

另外，進一步可將下部支撐體70佈置在框架200下部。下部支撐體70具有可進入框架邊緣部210的中空區域R內的尺寸且可為平板狀。此外，下部支撐體70的上部面也可形成有對應掩模單元片材部220形狀的預定的支撐槽（未圖示）。這種情況下，由於邊緣片材部221和第一柵格片材部223及第二柵格片材部225插在支撐槽中，因此掩模單元片材部220會被更加牢固地固定。In addition, the lower support body 70 may further be arranged at the lower part of the frame 200 . The lower support body 70 has a size that can enter into the hollow region R of the frame edge portion 210 and can be flat plate shape. In addition, a predetermined support groove (not shown) corresponding to the shape of the mask unit sheet portion 220 may be formed on the upper surface of the lower support body 70 . In this case, since the edge sheet portion 221 and the first grid sheet portion 223 and the second grid sheet portion 225 are inserted into the support grooves, the mask unit sheet portion 220 is more firmly fixed.

下部支撐體70可擠壓掩模100接觸的掩模單元區域CR的反面。即，下部支撐體70通過向上部方向支撐掩模單元片材部220，從而可防止在附著掩模100的過程中掩模單元片材部220向下部方向發生下垂。與此同時，由於下部支撐體70和模板50向相互相反的方向擠壓掩模100的邊緣和框架200[或者掩模單元片材部220]，因此可維持掩模100的對準狀態而不被打亂。The lower supporter 70 may press the reverse side of the mask cell region CR with which the mask 100 contacts. That is, the lower support body 70 can prevent the mask unit sheet portion 220 from sagging in the lower direction during the process of attaching the mask 100 by supporting the mask unit sheet portion 220 in the upper direction. Meanwhile, since the lower support body 70 and the template 50 press the edge of the mask 100 and the frame 200 [or the mask unit sheet portion 220] in opposite directions to each other, the alignment state of the mask 100 can be maintained without be disrupted.

如此，只通過在模板50上附著掩模100並將模板50裝載到框架200上，便可結束將掩模100對應至框架200的掩模單元區域CR上的過程，該過程中可做到對掩模100不施加任何拉伸力。In this way, only by attaching the mask 100 on the template 50 and loading the template 50 on the frame 200, the process of mapping the mask 100 to the mask cell region CR of the frame 200 can be completed, and the correct The mask 100 does not exert any tensile force.

接下來，可以向掩模100照射雷射L並基於雷射焊接將掩模100附著在框架200上。雷射焊接的掩模的焊接部WP部分上形成有焊珠WB，焊珠WB可具有與掩模100/框架200相同的材料且與它們一體連接。此時，本發明的掩模100由於焊接部WP[或者虛擬部DM]部分的厚度大於掩模單元C的厚度，因此可從焊接部WP生成充分多的焊珠WB。充分多的焊珠WB可使掩模100與框架200更加有力且穩定地附著。由此，可提高框架一體型掩模的製造收率。Next, the mask 100 may be irradiated with the laser L and attached to the frame 200 based on laser welding. The solder bead WB is formed on the welding portion WP of the laser-bonded mask, and the solder bead WB may have the same material as the mask 100/frame 200 and be integrally connected with them. At this time, in the mask 100 of the present invention, since the thickness of the welded portion WP [or the dummy portion DM] is larger than the thickness of the mask unit C, a sufficiently large number of beads WB can be generated from the welded portion WP. A sufficient number of solder beads WB can make the mask 100 and the frame 200 adhere more strongly and stably. Thereby, the manufacturing yield of a frame-integrated mask can be improved.

圖18是示出本發明的一實施例涉及的將掩模100附著在框架200之後將掩模100與模板50分離的過程的示意圖。18 is a schematic diagram illustrating a process of separating the mask 100 from the template 50 after attaching the mask 100 to the frame 200 according to an embodiment of the present invention.

參照圖18，將掩模100附著在框架200之後，可將掩模100與模板50進行分離（debonding）。掩模100與模板50的分離可通過對臨時黏合部55進行加熱ET、化學處理CM、施加超聲波US，施加UVUV中至少任意一個而執行。由於掩模100維持附著在框架200的狀態，因此可只抬起模板50。作為一例，如果施加高於85℃~100℃的溫度的熱ET，則臨時黏合部55的黏性降低，掩模100與模板50的黏合力減弱，從而可分離掩模100與模板50。作為另一例，可通過利用將臨時黏合部55沉浸CM在IPA、丙酮、乙醇等化學物質中以使臨時黏合部55溶解、去除等方式來分離掩模100與模板50。作為另一例，通過施加超聲波US或者施加UVUV使掩模100與模板50的黏合力減弱，從而可分離掩模100與模板50。Referring to FIG. 18 , after the mask 100 is attached to the frame 200 , the mask 100 and the template 50 may be debonded. The separation of the mask 100 and the template 50 may be performed by at least any one of heating ET, chemical treatment CM, application of ultrasonic waves US, and application of UVUV to the temporary adhesive portion 55 . Since the mask 100 remains attached to the frame 200, only the template 50 can be lifted. As an example, when thermal ET at a temperature higher than 85° C. to 100° C. is applied, the viscosity of the temporary adhesive portion 55 decreases, and the adhesive force between the mask 100 and the template 50 is weakened, so that the mask 100 and the template 50 can be separated. As another example, the mask 100 and the template 50 may be separated by immersing the temporary bonding portion 55 in a chemical such as IPA, acetone, ethanol, etc. to dissolve, remove, or the like. As another example, the adhesive force between the mask 100 and the template 50 is weakened by applying ultrasonic waves US or UVUV, so that the mask 100 and the template 50 can be separated.

進一步而言，作為黏合掩模100與模板50的媒介的臨時黏合部55為TBDB黏合材料（temporary bonding & debonding adhesive），從而可使用各種分離（debonding）方法。Further, the temporary bonding portion 55 serving as a medium for bonding the mask 100 and the template 50 is a TBDB bonding material (temporary bonding & debonding adhesive), so that various debonding methods can be used.

作為一例，可使用基於化學處理CM的溶劑分離（Solvent Debonding）方法。可基於溶劑（solvent）的滲透使臨時黏合部55溶解並進行分離。此時，掩模100上已形成有圖案P，因此溶劑可通過掩模圖案P及掩模100與模板50的分界滲透。溶劑分離可在常溫（room temperature）下進行，由於無需額外的複雜的分離設備，因此相比於其他分離方法具有相對廉價的優點。As an example, a solvent debonding method based on chemical treatment of CM can be used. The temporary adhesive portion 55 may be dissolved and separated based on penetration of a solvent. At this time, the pattern P has been formed on the mask 100 , so the solvent can penetrate through the mask pattern P and the boundary between the mask 100 and the template 50 . Solvent separation can be performed at room temperature, which has the advantage of being relatively inexpensive compared to other separation methods since no additional complex separation equipment is required.

作為另一例，可使用基於加熱ET的熱分離（Heat Debonding）方法。通過利用高溫的熱來誘導臨時黏合部55的分解，如果掩模100與模板50間的黏合力減弱，則可向上下方向或者左右方向進行分離。As another example, a heat debonding method based on heating ET may be used. By inducing the disintegration of the temporary adhesive portion 55 by high temperature heat, when the adhesive force between the mask 100 and the template 50 is weakened, separation can be performed in the vertical direction or the left and right directions.

作為另一例，可使用基於加熱ET、施加UVUV等的剝離黏合劑分離（Peelable Adhesive Debonding）方法。當臨時黏合部55為熱剝離膠帶時，可利用剝離黏合劑分離方法來進行分離，該方法無需進行如熱分離方法的高溫熱處理且無需額外設置高價的熱處理設備，具有進行過程相對簡單的優點。As another example, a Peelable Adhesive Debonding method based on heating ET, applying UVUV, or the like may be used. When the temporary adhesive part 55 is a thermal peeling tape, it can be separated by a peeling adhesive separation method, which does not require high temperature heat treatment such as thermal separation method and does not require additional expensive heat treatment equipment, and has the advantage of a relatively simple process.

作為另一例，可使用基於化學處理CM、施加超聲波US、施加UVUV等的常溫分離（Room Temperature Debonding）方法。如果在掩模100或者模板50的一部分（中心部）進行non-sticky處理，則通過使用臨時黏合部55只黏合在邊緣部分上。此外，分離時溶劑滲透到邊緣部分使臨時黏合部55溶解從而實現分離。該方法具有在黏合和分離的過程中除掩模100、模板50的邊緣區域以外的剩餘部分不發生直接的損失或者分離時不發生因黏合材料殘留物（residue）導致的缺陷等優點。此外，不同於熱分離法，由於在分離時無需高溫熱處理過程，因此具有可相對縮減工藝成本的優點。As another example, a room temperature debonding (Room Temperature Debonding) method based on chemical treatment of CM, application of ultrasonic wave US, application of UVUV, or the like can be used. If non-sticky processing is performed on a part (central part) of the mask 100 or the template 50 , only the edge part is adhered by using the temporary adhesive part 55 . In addition, the solvent penetrates into the edge portion at the time of separation to dissolve the temporary adhesive portion 55 to achieve separation. This method has advantages such as no direct loss of the remaining parts other than the edge regions of the mask 100 and the template 50 during the bonding and separation process or defects caused by the residue of the bonding material during separation. In addition, unlike the thermal separation method, since a high-temperature heat treatment process is not required during separation, it has the advantage that the process cost can be relatively reduced.

圖19是示出本發明的一實施例涉及的將掩模100附著在框架200的狀態的示意圖。FIG. 19 is a schematic diagram showing a state in which the mask 100 is attached to the frame 200 according to an embodiment of the present invention.

參照圖19，一個掩模100而可附著在框架200的一個單元區域CR上。Referring to FIG. 19 , one mask 100 may be attached to one unit region CR of the frame 200 .

框架200的掩模單元片材部220由於具有很薄的厚度，因此如果掩模100以被施加拉伸力的狀態附著在掩模單元片材部220上，則掩模100上殘留的拉伸力可能會作用在掩模單元片材部220及掩模單元區域CR上，並使其發生變形。因此，應以不施加拉伸力於掩模100上的狀態將掩模100附著在掩模單元片材部220上。本發明只通過在模板50上附著掩模100，將模板50裝載到框架200上，便可結束將掩模100對應至框架200的掩模單元區域CR上的過程，該過程中可做到對掩模100上不施加任何拉伸力。因此，可防止施加在掩模100上的拉伸力反過來以張力（tension）的形式作用在框架200上使框架200[或者掩模單元片材部220]發生變形。Since the mask unit sheet portion 220 of the frame 200 has a very thin thickness, if the mask 100 is attached to the mask unit sheet portion 220 in a state where a tensile force is applied, the remaining stretch on the mask 100 A force may act on the mask unit sheet portion 220 and the mask unit region CR to deform them. Therefore, the mask 100 should be attached to the mask unit sheet portion 220 in a state where no tensile force is applied to the mask 100 . In the present invention, only by attaching the mask 100 to the template 50 and loading the template 50 on the frame 200, the process of mapping the mask 100 to the mask unit region CR of the frame 200 can be completed. No tensile force is applied to the mask 100 . Therefore, it is possible to prevent the frame 200 [or the mask unit sheet portion 220 ] from being deformed by the tensile force exerted on the mask 100 in turn acting on the frame 200 in the form of tension.

現有的圖1的掩模10包括6個單元C1~C6，因此具有較長的長度，而本發明的掩模100包括一個單元C，因此具有較短的長度，因此PPA(pixel position accuracy)扭曲的程度會變小。假設包括多個單元C1~C6…的掩模10的長度為1m，並且在1m的總長度中發生10μm的PPA誤差，則本發明的掩模100可以隨著相對長度減小（相當於單元C數量減少）而將上述誤差範圍變成1/n。例如，本發明的掩模100長度為100mm，則具有從現有的掩模10的1m減小為1/10的長度，因此在100mm的總長度中發生1μm的PPA誤差，顯著降低對準誤差。The existing mask 10 of FIG. 1 includes 6 cells C1 to C6 and thus has a longer length, while the mask 100 of the present invention includes one cell C and therefore has a shorter length, so the PPA (pixel position accuracy) is distorted will be reduced. Assuming that the length of the mask 10 including a plurality of cells C1 to C6 . . . is 1 m, and a PPA error of 10 μm occurs in the total length of 1 m, the mask 100 of the present invention can decrease with the relative length (equivalent to cell C number reduction) and change the above error range to 1/n. For example, if the mask 100 of the present invention has a length of 100 mm, the length of the conventional mask 10 is reduced from 1 m to 1/10. Therefore, a PPA error of 1 μm occurs in the total length of 100 mm, and the alignment error is significantly reduced.

另一方面，掩模100具備多個單元C，並且即使使各個單元C與框架200的各個單元區域CR對應仍處於對準誤差最小化的範圍內，則掩模100也可以與框架200的多個掩模單元區域CR對應。或者，具有多個單元C的掩模100也可以與一個掩模單元區域CR對應。在這種情況下，考慮到基於對準的工藝時間和生產性，掩模100優選具備盡可能少量的單元C。On the other hand, the mask 100 includes a plurality of cells C, and the mask 100 can be matched with a plurality of cells C of the frame 200 even if the alignment errors are minimized even if the cells C correspond to the cell regions CR of the frame 200 . corresponding to each mask unit region CR. Alternatively, the mask 100 having a plurality of cells C may correspond to one mask cell region CR. In this case, the mask 100 is preferably provided with as few cells C as possible in consideration of alignment-based process time and productivity.

在本發明中，由於只需匹配掩模100的一個單元C並確認對準狀態即可，因此與同時匹配多個單元C（C1~C6）並需要確認全部對準狀態的現有方法相比，可以顯著縮短製造時間。In the present invention, since it is only necessary to match one cell C of the mask 100 and check the alignment state, compared with the conventional method that matches a plurality of cells C ( C1 to C6 ) at the same time and needs to check all the alignment states, Manufacturing time can be significantly reduced.

即，本發明的框架一體型掩模的製造方法與同時匹配6個單元C1~C6並同時確認6個單元C1~C6的對準狀態的現有方法相比，通過使包含於6個掩模100的各個單元C11~C16分別與一個單元區域CR11~CR16對應並通過確認各個對準狀態的6次過程，能夠明顯縮短時間。That is, the manufacturing method of the frame-integrated mask of the present invention is compared with the conventional method in which the six cells C1 to C6 are matched at the same time and the alignment state of the six cells C1 to C6 is confirmed at the same time. Each of the cells C11 to C16 corresponding to one cell region CR11 to CR16 respectively and through the process of confirming each alignment state 6 times can significantly shorten the time.

另外，在本發明的框架一體型掩模的製造方法，在使30個掩模100分別與30個單元區域CR（CR11~CR56）對應並對準的30次的過程中的產品收率，可以明顯高於使分別包括6個單元C1~C6的5個掩模10（參照圖2的（a））與框架20對應並對準的5次過程中的現有產品的收率。由於在每次對應於6個單元C的區域中對準6個單元C1~C6的現有方法是明顯繁瑣且困難的作業，而且產品收率低。In addition, in the method of manufacturing a frame-integrated mask of the present invention, the product yield in the process of aligning and aligning 30 masks 100 with 30 cell regions CR (CR11 to CR56), respectively, 30 times can be obtained. This is significantly higher than the yield of the conventional product in the five-pass process of aligning and aligning five masks 10 (refer to FIG. 2( a )) each including six cells C1 to C6 with the frame 20 . Since the existing method of aligning 6 cells C1 to C6 in a region corresponding to 6 cells C at a time is obviously a cumbersome and difficult operation, and the product yield is low.

另外，如圖10的（b）步驟中所述，利用層壓工藝將掩模金屬膜110黏合在模板50上時，掩模金屬膜110上可施加約100℃的溫度。由此，可使掩模金屬膜110以施加有部分拉伸力的狀態黏合在模板50上。然後，將掩模100附著在框架200上，如果模板50與掩模100分離，則掩模100可收縮一定的量。In addition, as described in step (b) of FIG. 10 , when the mask metal film 110 is adhered on the template 50 by the lamination process, a temperature of about 100° C. may be applied to the mask metal film 110 . As a result, the mask metal film 110 can be adhered to the template 50 in a state where a partial tensile force is applied. Then, the mask 100 is attached to the frame 200, and if the template 50 is separated from the mask 100, the mask 100 may be shrunk by a certain amount.

如果每個掩模100均附著在對應的掩模單元區域CR上之後，將模板50與掩模100進行分離，則由於多個掩模100施加向相反的方向收縮的張力，所述張力相互抵消，因此掩模單元片材部220上不會發生變形。例如，在CR11單元區域上附著的掩模100與CR12單元區域上附著的掩模100之間的第一柵格片材部223中，附著在CR11單元區域上的掩模100向右側方向作用的張力與附著在CR12單元區域上的掩模100向左側方向作用的張力可相互抵消。由此，通過最小化框架200[或者掩模單元片材部220]因張力發生的變形，從而具有可最小化掩模100[或者，掩模圖案P]的對準誤差的優點。If the template 50 is separated from the mask 100 after each mask 100 is attached to the corresponding mask unit region CR, since the plurality of masks 100 exert tensions that shrink in opposite directions, the tensions cancel each other out , so that the mask unit sheet portion 220 is not deformed. For example, in the first grid sheet portion 223 between the mask 100 attached to the CR11 cell region and the mask 100 attached to the CR12 cell region, the mask 100 attached to the CR11 cell region acts in the right direction. The tension and the tension acting in the left direction of the mask 100 attached to the CR12 unit area can cancel each other out. Thus, by minimizing the deformation of the frame 200 [or the mask unit sheet portion 220] due to tension, there is an advantage that the alignment error of the mask 100 [or, the mask pattern P] can be minimized.

圖20是示出本發明的一實施例涉及的利用框架一體型掩模100、200的OLED像素沉積裝置1000的示意圖。FIG. 20 is a schematic diagram illustrating an OLED pixel deposition apparatus 1000 using frame-integrated masks 100 and 200 according to an embodiment of the present invention.

參照圖20，OLED像素沉積裝置1000包括：磁板300，其容納有磁體310，並且排布有冷卻水管350；沉積源供給部500，其從磁板300的下部供給有機物原料600。20 , the OLED pixel deposition apparatus 1000 includes: a magnetic plate 300 , which accommodates the magnets 310 and is arranged with cooling water pipes 350 ;

磁板300與沉積源沉積部500之間可以插入有用於沉積有機物源600的玻璃等目標基板900。目標基板900上可以以緊貼或非常接近的方式配置有使有機物源600按不同像素沉積的框架一體型掩模100、200（或者FMM）。磁體310可以產生磁場，並通過磁場緊貼到目標基板900上。A target substrate 900 such as glass for depositing the organic substance source 600 may be inserted between the magnetic plate 300 and the deposition source deposition part 500 . The frame-integrated masks 100 and 200 (or FMM) for depositing the organic material source 600 according to different pixels may be disposed on the target substrate 900 in a close contact or very close manner. The magnet 310 can generate a magnetic field, and is closely attached to the target substrate 900 through the magnetic field.

沉積源供給部500可以往返左右路徑並供給有機物源600，由沉積源供給部500供給的有機物源600可以通過形成於框架一體型掩模100、200的圖案P附著至目標基板900的一側。通過框架一體型掩模100、200的圖案P後沉積的有機物源600，可以用作OLED的像素700。The deposition source supply part 500 can reciprocate the left and right paths and supply the organic substance source 600 , and the organic substance source 600 supplied by the deposition source supply part 500 can be attached to one side of the target substrate 900 through the pattern P formed on the frame-integrated masks 100 and 200 . The organic material source 600 deposited after framing the pattern P of the integrated masks 100 and 200 can be used as the pixel 700 of the OLED.

為了防止由於陰影效應（Shadow Effect）發生的像素700的不均勻沉積，框架一體型掩模100、200的圖案可以傾斜地形成S（或者以錐形S形成）。沿著傾斜表面，在對角線方向上通過圖案的有機物源600，也可以有助於像素700的形成，因此，能夠整體上厚度均勻地沉積像素700。In order to prevent uneven deposition of the pixels 700 due to a shadow effect, the pattern of the frame-integrated masks 100 , 200 may be formed in an oblique S (or in a tapered S). Along the inclined surface, passing the patterned organic source 600 in a diagonal direction may also contribute to the formation of the pixel 700, and thus, the pixel 700 can be deposited with a uniform thickness as a whole.

在高於像素沉積工藝溫度的第一溫度下，掩模100附著固定於框架200上，因此即使提升至用於沉積像素工藝的溫度，也對掩模圖案P的位置幾乎不構成影響，掩模100和與其相鄰的掩模100之間的PPA能夠保持為不超過3μm。At the first temperature higher than the pixel deposition process temperature, the mask 100 is attached and fixed on the frame 200, so even if the temperature is raised to the pixel deposition process temperature, the position of the mask pattern P is hardly affected. The PPA between 100 and the mask 100 adjacent thereto can be maintained to be no more than 3 μm.

如上所述，本發明列舉了優選實施例進行圖示和說明，但是不限於上述實施例，在不脫離本發明的精神的範圍內，本領域技術人員能夠進行各種變形和變更。這種變形及變更均落在本發明和所附的申請專利範圍的範圍內。As described above, the present invention is illustrated and described with reference to the preferred embodiments, but the present invention is not limited to the above-described embodiments, and various modifications and changes can be made by those skilled in the art without departing from the spirit of the present invention. Such modifications and alterations fall within the scope of the present invention and the appended claims.

6:OLED像素 10、10':掩模 11:掩模膜 13:圖案 20:框架 23:第一絕緣部 25:第二絕緣部 26:空白空間 27:第三絕緣部 50:模板 50a:中心部 50b:邊緣部 51:雷射貫穿孔 55:臨時黏合部 56:芯膜 57a、57b:黏合層 58a、58b:剝離膜/離型膜 60:第二模板 61:雷射貫穿孔 65:臨時黏合部 70:下部支撐體 90:真空吸盤 100:掩模 101:掩模金屬膜的一面 102:虛擬部DM的面 103:掩模單元C的面 110、110':掩模膜、掩模金屬膜 200:掩模   框架200 210:邊緣框架部 220、220':掩模單元片材部 221:邊緣片材部 223:第一柵格片材部 225:第二柵格片材部 300:磁板 310:磁體 350:冷却水管 500:沉積源沉積部 600:有機物源 700:像素 900:對象基板 1000:OLED像素沉積裝置 C(C1~C6、C11~C56):單元、掩模單元 CM:化學處理 CG:掩模單元部 CR(CR11~CR56):掩模單元區域 D1~D1"、D2~D2":距離 DM:虛擬部 EC:蝕刻 ET:施加熱 F1~F2:拉伸力 L:雷射 P:掩模圖案 PD':像素間隔 PS:平坦化 R:中空區域 Ra:表面粗糙度 T1、T2:厚度 TP:觸摸拋光 US:超聲波 UV:紫外線 W:焊接 W1、W2:寬度 WB:焊珠 WP:焊接部6: OLED pixels 10, 10': mask 11: Mask film 13: Pattern 20: Frame 23: The first insulating part 25: Second insulating part 26: Blank Space 27: The third insulating part 50: Template 50a: Center Section 50b: Edge 51: Laser through hole 55: Temporary bonding part 56: Core film 57a, 57b: Adhesive layer 58a, 58b: release film/release film 60: Second Template 61: Laser through hole 65: Temporary Adhesives 70: Lower support body 90: Vacuum suction cup 100: Mask 101: One side of the mask metal film 102: The face of the virtual department DM 103: Face of mask unit C 110, 110': mask film, mask metal film 200: Mask Frame 200 210: Edge Frame Department 220, 220': mask unit sheet part 221: Edge Sheet Section 223: First grid sheet section 225: Second Grid Sheet Section 300: Magnetic plate 310: Magnet 350: Cooling water pipe 500: Sedimentary source sedimentary part 600: Source of organic matter 700: pixels 900: Object Substrate 1000: OLED pixel deposition device C(C1~C6, C11~C56): unit, mask unit CM: chemical treatment CG: Mask Unit Section CR (CR11~CR56): mask unit area D1~D1", D2~D2": Distance DM: Virtual Ministry EC: Etching ET: apply heat F1~F2: Tensile force L: Laser P: mask pattern PD': pixel interval PS: Flattening R: hollow area Ra: surface roughness T1, T2: Thickness TP: Touch Polish US: Ultrasound UV: Ultraviolet W: Welding W1, W2: width WB: Weld Beads WP: Welding Department

圖1是示出現有的OLED像素沉積用掩模的示意圖。 圖2是示出現有的將掩模附著至框架的過程的示意圖。 圖3是示出在現有的拉伸掩模的過程中發生單元之間的對準誤差的示意圖。 圖4是示出本發明的一實施例涉及的框架一體型掩模的主視圖以及側剖視圖。 圖5是示出本發明的一實施例涉及的框架的主視圖以及側剖視圖。 圖6是示出本發明的一實施例涉及的框架製造過程的示意圖。 圖7是示出本發明的另一實施例涉及的框架的製造過程的示意圖。 圖8是示出現有的用於形成高解析度OLED的掩模的示意圖。 圖9是示出本發明的一實施例涉及的掩模的示意圖。 圖10至圖12是示出本發明的一實施例涉及的在模板上黏合掩模金屬膜並形成掩模進而製造掩模支撐模板的過程的示意圖。 圖13是示出本發明的一實施例涉及的臨時黏合部的放大截面示意圖。 圖14是本發明的一實施例涉及的掩模的局部的放大截面示意圖。 圖15是示出本發明的另一實施例涉及的製造掩模支撐模板的過程的示意圖。 圖16是示出本發明的一實施例涉及的將掩模支撐模板裝載在框架上的過程的示意圖。 圖17是示出本發明的一實施例涉及的將模板裝載在框架上並將掩模對應至框架的單元區域的狀態的示意圖。 圖18是示出本發明的一實施例涉及的將掩模附著在框架上之後將掩模與模板分離的過程的示意圖。 圖19是示出本發明的一實施例涉及的將掩模附著在框架上的狀態的示意圖。 圖20是示出本發明的一實施例涉及的利用框架一體型掩模的OLED像素沉積裝置的示意圖。FIG. 1 is a schematic diagram showing a conventional OLED pixel deposition mask. FIG. 2 is a schematic diagram illustrating a conventional process of attaching a mask to a frame. FIG. 3 is a schematic diagram showing that an alignment error between cells occurs in a conventional process of stretching a mask. 4 is a front view and a side cross-sectional view showing a frame-integrated mask according to an embodiment of the present invention. 5 is a front view and a side cross-sectional view showing a frame according to an embodiment of the present invention. FIG. 6 is a schematic diagram illustrating a frame manufacturing process according to an embodiment of the present invention. FIG. 7 is a schematic diagram showing a manufacturing process of a frame according to another embodiment of the present invention. FIG. 8 is a schematic diagram showing a conventional mask for forming a high-resolution OLED. FIG. 9 is a schematic diagram showing a mask according to an embodiment of the present invention. 10 to 12 are schematic diagrams illustrating a process of adhering a mask metal film on a template and forming a mask to manufacture a mask supporting template according to an embodiment of the present invention. 13 is an enlarged schematic cross-sectional view showing a temporary adhesive portion according to an embodiment of the present invention. 14 is a schematic enlarged cross-sectional view of a part of a mask according to an embodiment of the present invention. FIG. 15 is a schematic diagram illustrating a process of manufacturing a mask support template according to another embodiment of the present invention. 16 is a schematic diagram illustrating a process of loading a mask support template on a frame according to an embodiment of the present invention. 17 is a schematic diagram showing a state in which a template is loaded on a frame and a mask is assigned to a unit area of the frame according to an embodiment of the present invention. 18 is a schematic diagram illustrating a process of separating the mask from the template after attaching the mask to the frame according to an embodiment of the present invention. 19 is a schematic diagram showing a state in which a mask is attached to a frame according to an embodiment of the present invention. 20 is a schematic diagram illustrating an OLED pixel deposition apparatus using a frame-integrated mask according to an embodiment of the present invention.

25:第二絕緣部 25: Second insulating part

26:空白空間 26: Blank Space

50:模板 50: Template

51:雷射貫穿孔 51: Laser through hole

55:臨時黏合部 55: Temporary bonding part

100:掩模 100: Mask

102:虛擬部DM的面 102: The face of the virtual department DM

110:掩模膜、掩模金屬膜 110: mask film, mask metal film

C:單元、掩模單元 C: unit, mask unit

DM:虛擬部 DM: Virtual Ministry

P:掩模圖案 P: mask pattern

Claims (14)

一種掩模支撐模板的製造方法，該模板用於支撐OLED像素形成用掩模並使其對應至框架上，其特徵在於，該方法包括：(a)在一面形成有臨時黏合部的第一模板上黏合掩模金屬膜的步驟；(b)縮減在第一模板上黏合的掩模金屬膜的掩模單元部厚度的步驟；(c)從第一模板分離掩模金屬膜的步驟；以及(d)在一面形成有臨時黏合部的第二模板上黏合從第一模板分離的掩模金屬膜的步驟；以及(e)通過在掩模金屬膜的掩模單元部上形成掩模圖案來製造掩模的步驟，掩模包括形成有多個掩模圖案的掩模單元及掩模單元周圍的虛擬部，第一模板和第二模板的材料為晶圓(wafer)、玻璃(glass)、矽膠(silica)、石英(quartz)、氧化鋁(Al2O3)、氧化鋯(zirconia)中的一個。 A method for manufacturing a mask supporting template, the template is used to support a mask for forming an OLED pixel and make it correspond to a frame, wherein the method comprises: (a) a first template with a temporary adhesive portion formed on one side the step of bonding the mask metal film; (b) the step of reducing the thickness of the mask unit portion of the mask metal film bonded on the first template; (c) the step of separating the mask metal film from the first template; and ( d) a step of adhering the mask metal film separated from the first template on the second template having the temporary bonding portion formed on one side; and (e) manufacturing by forming a mask pattern on the mask unit portion of the mask metal film The step of masking, the mask includes a mask unit formed with a plurality of mask patterns and dummy parts around the mask unit, the materials of the first template and the second template are wafer, glass, silicone One of (silica), quartz (quartz), alumina (Al 2 O 3 ), and zirconia (zirconia). 如請求項1所述的掩模支撐模板的製造方法，其特徵在於，掩模金屬膜是利用壓延工藝形成的。 The method for manufacturing a mask support template according to claim 1, wherein the mask metal film is formed by a rolling process. 如請求項1所述的掩模支撐模板的製造方法，其特徵在於，臨時黏合部為基於加熱可分離的黏合劑或者黏合片材，基於照射UV可分離的黏合劑或者黏合片材。 The method for manufacturing a mask support template according to claim 1, wherein the temporary adhesive portion is an adhesive or an adhesive sheet that can be detached based on heating, and an adhesive or an adhesive sheet that can be detached based on UV irradiation. 如請求項1所述的掩模支撐模板的製造 方法，其特徵在於，步驟(b)包括：(b1)在除掩模金屬膜的掩模單元部以外的剩餘區域上形成第一絕緣部的步驟；以及(b2)通過蝕刻掩模金屬膜的掩模單元部來縮減厚度的步驟。 Manufacture of a mask support template as claimed in claim 1 The method is characterized in that the step (b) comprises: (b1) the step of forming a first insulating portion on the remaining region except the mask unit portion of the mask metal film; and (b2) the step of etching the mask metal film by etching The step of masking the cell portion to reduce the thickness. 如請求項4所述的掩模支撐模板的製造方法，其特徵在於，在厚度被縮減的掩模單元部上進一步執行縮減粗糙度的處理。 The method of manufacturing a mask support template according to claim 4, wherein a roughness reduction process is further performed on the mask unit portion whose thickness is reduced. 如請求項5所述的掩模支撐模板的製造方法，其特徵在於，掩模單元部與虛擬部的厚度差為2μm至25μm，從掩模單元部與虛擬部的分界至焊接部角部的端部的任意直線與水平線形成的角度為0.057°至1.432°。 The method for manufacturing a mask support template according to claim 5, wherein the thickness difference between the mask unit portion and the dummy portion is 2 μm to 25 μm, from the boundary between the mask unit portion and the dummy portion to the thickness of the welding portion corner. The angle formed by any straight line at the end with the horizontal line is 0.057° to 1.432°. 如請求項5所述的掩模支撐模板的製造方法，其特徵在於，進行縮減粗糙度的處理後，掩模單元部的表面粗糙度(Ra)小於0.1μm(超過0)。 The method for manufacturing a mask support template according to claim 5, wherein the surface roughness (Ra) of the mask unit portion is less than 0.1 μm (exceeds 0) after the roughness reduction treatment is performed. 如請求項5所述的掩模支撐模板的製造方法，其特徵在於，在進行縮減粗糙度的處理中，在掩模單元部上進一步進行形成光澤層的處理。 The method of manufacturing a mask support template according to claim 5, wherein, in the roughness reduction process, a process of forming a glossy layer is further performed on the mask unit portion. 如請求項1所述的掩模支撐模板的製造方法，其特徵在於，在步驟(a)與步驟(b)之間，進一步執行縮減掩模金屬膜整體厚度的步驟。 The method for manufacturing a mask support template according to claim 1, characterized in that between steps (a) and (b), a step of reducing the overall thickness of the mask metal film is further performed. 如請求項1所述的掩模支撐模板的製造方法，其特徵在於，步驟(e)包括：(e1)在掩模單元部上形成經圖案化的第二絕緣部的 步驟；(e2)通過蝕刻第二絕緣部之間露出的掩模金屬膜的部分來形成掩模圖案的步驟；以及(e3)去除第二絕緣部的步驟。 The method for manufacturing a mask support template according to claim 1, wherein step (e) comprises: (e1) forming a patterned second insulating portion on the mask unit portion steps; (e2) a step of forming a mask pattern by etching a portion of the mask metal film exposed between the second insulating portions; and (e3) a step of removing the second insulating portion. 如請求項1所述的掩模支撐模板的製造方法，其特徵在於，掩模金屬膜與第二模板上的臨時黏合部之間夾設有第三絕緣部。 The method for manufacturing a mask support template according to claim 1, wherein a third insulating portion is interposed between the mask metal film and the temporary adhesive portion on the second template. 一種框架一體型掩模的製造方法，該框架一體型掩模由至少一個掩模和用於支撐掩模的框架一體形成，其特徵在於，該方法包括：(a)在一面形成有臨時黏合部的第一模板上黏合掩模金屬膜的步驟；(b)縮減在第一模板上黏合的掩模金屬膜的掩模單元部厚度的步驟；(c)從第一模板分離掩模金屬膜的步驟；(d)在一面形成有臨時黏合部的第二模板上黏合從第一模板分離的掩模金屬膜的步驟；以及(e)通過在掩模金屬膜的掩模單元部上形成掩模圖案來製造掩模的步驟，掩模包括形成有多個掩模圖案的掩模單元及掩模單元周圍的虛擬部；(f)將第二模板裝載到具有至少一個掩模單元區域的框架上，並將掩模對應至框架的掩模單元區域的步驟；(g)將掩模的虛擬部的一部分附著在框架上的步驟；(h)使掩模與第二模板分離的步驟， 第一模板和第二模板的材料為晶圓(wafer)、玻璃(glass)、矽膠(silica)、石英(quartz)、氧化鋁(Al2O3)、氧化鋯(zirconia)中的一個，在步驟(f)中，第二模板黏合支撐掩模並使其移動至框架上，且不施加拉伸力於掩模，只通過控制第二模板的位置使掩模對應至框架上。 A method of manufacturing a frame-integrated mask, the frame-integrated mask being integrally formed by at least one mask and a frame for supporting the mask, characterized in that the method comprises: (a) forming a temporary adhesive portion on one side the step of bonding the mask metal film on the first template; (b) reducing the thickness of the mask unit portion of the mask metal film bonded on the first template; (c) separating the mask metal film from the first template the steps; (d) the step of adhering the mask metal film separated from the first template on the second template having the temporary bonding portion formed on one side; and (e) by forming a mask on the mask unit portion of the mask metal film the steps of patterning a mask, the mask comprising a mask unit formed with a plurality of mask patterns and dummy parts around the mask unit; (f) loading a second template onto a frame having at least one mask unit area , and the step of corresponding the mask to the mask unit area of the frame; (g) the step of attaching a part of the dummy part of the mask to the frame; (h) the step of separating the mask from the second template, the first The material of the template and the second template is one of wafer (wafer), glass (glass), silica gel (silica), quartz (quartz), aluminum oxide (Al 2 O 3 ), zirconia (zirconia), in step ( In f), the second template adheres and supports the mask and moves it to the frame, and does not apply a tensile force to the mask, and only controls the position of the second template to make the mask correspond to the frame. 如請求項12所述的框架一體型掩模的製造方法，其特徵在於，步驟(h)係對臨時黏合部進行加熱、化學處理、施加超聲波、施加UV中至少任意一個處理，從而使掩模與模板分離的步驟。 The method for manufacturing a frame-integrated mask according to claim 12, wherein the step (h) is to subject the temporary adhesive portion to at least one of heating, chemical treatment, ultrasonic application, and UV application, so as to make the mask Steps separated from template. 一種框架一體型掩模的製造方法，該框架一體型掩模由至少一個掩模和用於支撐掩模的框架一體形成，其特徵在於，該方法包括：(a)在具有至少一個掩模單元區域的框架上裝載通過請求項1所述的製造方法製造的掩模支撐模板，並將掩模對應至框架的掩模單元區域的步驟；以及(b)將掩模附著在框架上的步驟。A method for manufacturing a frame-integrated mask, the frame-integrated mask being integrally formed by at least one mask and a frame for supporting the mask, characterized in that the method comprises: (a) having at least one mask unit The step of loading the mask support template manufactured by the manufacturing method described in claim 1 on the frame of the area, and corresponding the mask to the mask unit area of the frame; and (b) the step of attaching the mask to the frame.
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Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102442459B1 (en) * 2020-10-07 2022-09-14 주식회사 오럼머티리얼 Producing method of template for supporting mask and template for supporting mask and producing method of mask integrated frame
KR102435235B1 (en) * 2020-10-07 2022-08-24 주식회사 효산 Producing method of mask and mask
KR102435236B1 (en) * 2020-10-07 2022-08-24 주식회사 효산 Producing method of mask and mask
CN114481018A (en) * 2020-10-23 2022-05-13 悟劳茂材料公司 Mask manufacturing method
KR102597891B1 (en) * 2020-12-01 2023-11-06 주식회사 효산 Producing system of mask intergrated frame and producing method thereof
TWD215838S (en) 2021-05-07 2021-12-01 景美科技股份有限公司 Frame

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1534383A (en) * 2003-03-27 2004-10-06 ����Sdi��ʽ���� Deposited mask of display device and its manufacturing method
TW200927962A (en) * 2007-08-24 2009-07-01 Dainippon Printing Co Ltd Vapor deposition mask, vapor deposition mask device, method for manufacturing vapor deposition mask, method for manufacturing vapor deposition mask device and method for manufacturing sheet-shaped member for vapor deposition mask
TW201708590A (en) * 2015-07-17 2017-03-01 Toppan Printing Co Ltd Method for producing base for metal masks, method for producing metal mask for vapor deposition, base for metal masks, and metal mask for vapor deposition
TW201712924A (en) * 2015-09-15 2017-04-01 Applied Materials Inc A shadow mask for organic light emitting diode manufacture
WO2018066844A1 (en) * 2016-10-06 2018-04-12 주식회사 포스코 Alloy metal foil to be used as deposition mask, deposition mask, manufacturing methods therefor, and organic light emitting device manufacturing method using same

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR200183547Y1 (en) * 1997-12-24 2000-06-01 김영환 Semiconductor die bonding apparatus
JP2006152396A (en) * 2004-11-30 2006-06-15 Sony Corp Method for manufacturing metal mask, mask of artwork master for electroforming and artwork master
CN102971673B (en) * 2010-07-09 2015-10-07 三井化学株式会社 Protective film assembly and the mask adhesive for protective film assembly
KR102250047B1 (en) * 2014-10-31 2021-05-11 삼성디스플레이 주식회사 Mask frame assembly, manufacturing method of the same and manufacturing method of organic light emitting display device there used
KR102082784B1 (en) * 2014-12-11 2020-03-02 삼성디스플레이 주식회사 Mask frame assembly, manufacturing method of the same and manufacturing method of organic light emitting display device there used

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1534383A (en) * 2003-03-27 2004-10-06 ����Sdi��ʽ���� Deposited mask of display device and its manufacturing method
TW200927962A (en) * 2007-08-24 2009-07-01 Dainippon Printing Co Ltd Vapor deposition mask, vapor deposition mask device, method for manufacturing vapor deposition mask, method for manufacturing vapor deposition mask device and method for manufacturing sheet-shaped member for vapor deposition mask
TW201708590A (en) * 2015-07-17 2017-03-01 Toppan Printing Co Ltd Method for producing base for metal masks, method for producing metal mask for vapor deposition, base for metal masks, and metal mask for vapor deposition
TW201712924A (en) * 2015-09-15 2017-04-01 Applied Materials Inc A shadow mask for organic light emitting diode manufacture
WO2018066844A1 (en) * 2016-10-06 2018-04-12 주식회사 포스코 Alloy metal foil to be used as deposition mask, deposition mask, manufacturing methods therefor, and organic light emitting device manufacturing method using same

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