TW202147666A - Producing method of mask and producing method of template for supporting mask and producing method of mask integrated frame - Google Patents
Producing method of mask and producing method of template for supporting mask and producing method of mask integrated frame Download PDFInfo
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- TW202147666A TW202147666A TW110116067A TW110116067A TW202147666A TW 202147666 A TW202147666 A TW 202147666A TW 110116067 A TW110116067 A TW 110116067A TW 110116067 A TW110116067 A TW 110116067A TW 202147666 A TW202147666 A TW 202147666A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/042—Coating on selected surface areas, e.g. using masks using masks
Abstract
Description
發明領域Field of Invention
本發明涉及掩模的製造方法、掩模支撐模板的製造方法及框架一體型掩模的製造方法。更具體地,涉及能夠準確地控制掩模圖案的尺寸和位置的掩模的製造方法、掩模支撐模板的製造方法及框架一體型掩模的製造方法。The present invention relates to a method of manufacturing a mask, a method of manufacturing a mask support template, and a method of manufacturing a frame-integrated mask. More specifically, it relates to a method of manufacturing a mask, a method of manufacturing a mask support template, and a method of manufacturing a frame-integrated mask that can accurately control the size and position of a mask pattern.
發明背景Background of the Invention
作為OLED(有機發光二極體)製造工藝中形成像素的技術,主要使用FMM(Fine Metal Mask,精細金屬掩模)方法,該方法將薄膜形式的金屬掩模(Shadow Mask,陰影掩模)緊貼於基板並且在所需位置上沉積有機物。As a technology for forming a pixel in an OLED (Organic Light Emitting Diode) manufacturing process, an FMM (Fine Metal Mask) method is mainly used, which tightens a metal mask (Shadow Mask) in the form of a thin film. Attach to the substrate and deposit organics on the desired locations.
現有的掩模製造方法準備用作掩模的金屬薄板,在金屬薄板上進行PR塗布之後進行圖案化或進行PR塗布使具有圖案之後通過蝕刻製造具有圖案的掩模。然而,為了防止陰影效果(Shadow Effect),難以使掩模圖案傾斜地形成錐形(Taper),而且需要執行額外的工藝,因此導致工藝時間、費用增加,生產性下降。A conventional mask manufacturing method prepares a metal sheet used as a mask, performs PR coating on the metal sheet, and then performs patterning, or performs PR coating to have a pattern, and then manufactures a patterned mask by etching. However, in order to prevent a shadow effect, it is difficult to form a tapered mask pattern obliquely, and an additional process needs to be performed, which leads to an increase in process time and cost, and a decrease in productivity.
在超高畫質的OLED中,現有的QHD畫質為500-600PPI (pixel per inch,每英吋像素),像素的尺寸達到約30-50μm,而4KUHD、8KUHD高畫質具有比之更高的-860PPI、-1600PPI等的解析度。因此,急需開發能夠精準地調節掩模圖案的尺寸的技術。In the ultra-high-definition OLED, the existing QHD image quality is 500-600PPI (pixel per inch, pixels per inch), and the pixel size reaches about 30-50μm, while 4KUHD and 8KUHD high-definition have higher than that resolution of -860PPI, -1600PPI, etc. Therefore, there is an urgent need to develop a technology capable of precisely adjusting the size of the mask pattern.
另外,在現有的OLED製造工藝中,將掩模製造成條狀、板狀等之後,將掩模焊接固定到OLED像素沉積框架並使用。為了製造大面積OLED,可將多個掩模固定於OLED像素沉積框架,在固定於框架的過程中,拉伸各個掩模,以使其變得平坦。在將多個掩模固定於一個框架過程中,仍然存在掩模之間及掩模單元之間對準不好的問題。此外,在將掩模焊接固定於框架的過程中,掩模膜的厚度過薄且面積大,因此存在掩模因荷重而下垂或者扭曲的問題。In addition, in the existing OLED manufacturing process, after the mask is manufactured into a strip shape, a plate shape, etc., the mask is welded and fixed to the OLED pixel deposition frame and used. To fabricate large area OLEDs, a plurality of masks can be fastened to the OLED pixel deposition frame, during which each mask is stretched to make it flat. In the process of fixing a plurality of masks on a frame, there is still a problem of poor alignment between masks and between mask units. In addition, in the process of welding and fixing the mask to the frame, the thickness of the mask film is too thin and the area is large, so there is a problem that the mask sags or twists due to the load.
如此,考慮到超高畫質的OLED的像素尺寸,需要將各單元之間的對準誤差縮減為數μm左右,超出這一誤差將導致產品的不良,所以收率可能極低。因此,需要開發能夠防止掩模的下垂或者扭曲等變形並使對準精確的技術以及將掩模固定於框架的技術等。In this way, considering the pixel size of ultra-high-quality OLEDs, it is necessary to reduce the alignment error between each unit to about a few μm. Exceeding this error will lead to defective products, so the yield may be extremely low. Therefore, it is necessary to develop a technique for preventing deformation such as sagging or twisting of the mask and for accurate alignment, a technique for fixing the mask to the frame, and the like.
發明概要 [技術問題]Summary of Invention [technical problem]
因此,本發明是為解決如上所述的現有技術的諸多問題而提出的,目的在於提供一種能夠準確地控制掩模圖案尺寸掩模的製造方法、掩模支撐模板的製造方法及框架一體型掩模的製造方法。 [技術方案]Therefore, the present invention is proposed to solve the above-mentioned problems of the prior art, and aims to provide a method for manufacturing a mask capable of accurately controlling the size of a mask pattern, a method for manufacturing a mask support template, and a frame-integrated mask. Method of making a mold. [Technical solutions]
本發明的上述目的可通過掩模的製造方法來實現,所述方法包括:(a)在掩模金屬膜的一面上形成圖案化的第一絕緣部的步驟;(b)在掩模金屬膜的一面利用濕蝕刻以預定深度形成第一掩模圖案的步驟;(c)至少在位於第一絕緣部的垂直下部的第一掩模圖案內形成第二絕緣部的步驟;(d)在掩模金屬膜的一面利用濕蝕刻形成從第一掩模圖案貫通掩模金屬膜的另一面的第二掩模圖案的步驟;在步驟(a)中,在第一絕緣部圖案之間進一步形成寬度小於第一絕緣部寬度的輔助絕緣部。The above objects of the present invention can be achieved by a method for manufacturing a mask, the method comprising: (a) forming a patterned first insulating portion on one side of a mask metal film; (b) forming a patterned first insulating portion on one side of the mask metal film; A step of forming a first mask pattern with a predetermined depth on one side of the first insulating portion by wet etching; (c) a step of forming a second insulating portion at least in the first mask pattern at a vertical lower portion of the first insulating portion; (d) a step of forming a second insulating portion in the mask pattern One side of the mold metal film is wet-etched to form a second mask pattern penetrating the other side of the mask metal film from the first mask pattern; in step (a), a width is further formed between the first insulating portion patterns The auxiliary insulating portion is smaller than the width of the first insulating portion.
在步驟(b)中,可以對第一絕緣部與輔助絕緣部之間露出的掩模金屬膜進行濕蝕刻。In step (b), wet etching may be performed on the mask metal film exposed between the first insulating portion and the auxiliary insulating portion.
當第一絕緣部的圖案之間的間隔為26μm至34μm且輔助絕緣部的寬度為12μm至16μm時,步驟(b)之後的第一絕緣部圖案之間的垂直區域所對應的掩模金屬膜的厚度至少小於4μm(超過0)。When the interval between the patterns of the first insulating portion is 26 μm to 34 μm and the width of the auxiliary insulating portion is 12 μm to 16 μm, the mask metal film corresponding to the vertical region between the patterns of the first insulating portion after step (b) The thickness of at least less than 4μm (more than 0).
步驟(c)可包括:(c1)至少在第一掩模圖案內填充第二絕緣部的步驟;(c2)利用烘焙揮發掉第二絕緣部的至少一部分的步驟;(c3)在第一絕緣部的上部進行曝光,並只留下位於第一絕緣部的垂直下部的第二絕緣部的步驟。The step (c) may include: (c1) the step of filling at least the second insulating part in the first mask pattern; (c2) the step of volatilizing at least a part of the second insulating part by baking; (c3) the first insulating part The upper part of the part is exposed, and only the step of the second insulating part located in the vertical lower part of the first insulating part is left.
在步驟(d)之後,第一掩模圖案的厚度大於第二掩模圖案的厚度,第一掩模圖案的上部寬度大於第二掩模圖案的下部寬度,第一掩模圖案的下部寬度小於第二掩模圖案的下部寬度。After step (d), the thickness of the first mask pattern is greater than the thickness of the second mask pattern, the upper width of the first mask pattern is greater than the lower width of the second mask pattern, and the lower width of the first mask pattern is less than The lower width of the second mask pattern.
第一掩模圖案的兩側面可形成為具有凹陷的曲率,第二掩模圖案的兩側面可形成為具有凸狀曲率。Both sides of the first mask pattern may be formed to have a concave curvature, and both sides of the second mask pattern may be formed to have a convex curvature.
此外,本發明的上述目的可通過掩模支撐模板的製造方法來實現,所述方法包括:(a)將掩模金屬膜黏合在模板上部面的步驟;(b)將掩模圖案形成於掩模金屬膜並製造掩模的步驟;步驟(b)包括:(b1)在掩模金屬膜的一面上形成圖案化的第一絕緣部的步驟;(b2)在掩模金屬膜的一面利用濕蝕刻以預定的深度形成第一掩模圖案的步驟;(b3)至少在位於第一絕緣部的垂直下部的第一掩模圖案內形成第二絕緣部的步驟;(b4)在掩模金屬膜的一面利用濕蝕刻形成從第一掩模圖案貫通至掩模金屬膜的另一面的第二掩模圖案的步驟;在步驟(b1)中,在第一絕緣部圖案之間進一步形成寬度小於第一絕緣部寬度的輔助絕緣部。In addition, the above objects of the present invention can be achieved by a method for manufacturing a mask support template, the method comprising: (a) the step of adhering a mask metal film to the upper surface of the template; (b) forming a mask pattern on the mask The step of molding a metal film and manufacturing a mask; the step (b) comprises: (b1) the step of forming a patterned first insulating portion on one side of the mask metal film; (b2) using a wet a step of forming a first mask pattern by etching at a predetermined depth; (b3) a step of forming a second insulating portion at least within the first mask pattern at a vertical lower portion of the first insulating portion; (b4) a mask metal film A step of forming a second mask pattern penetrating from the first mask pattern to the other side of the mask metal film by wet etching on one side; An auxiliary insulating portion with the width of the insulating portion.
在步驟(a)中,掩模金屬膜可通過夾設隔板絕緣部和臨時黏合部黏合於模板上部面。In step (a), the mask metal film can be bonded to the upper surface of the template by sandwiching the insulating part of the spacer and the temporary bonding part.
隔板絕緣部可包括固化負型光刻膠、含有環氧樹脂的負型光刻膠中至少一個。The spacer insulating portion may include at least one of a cured negative photoresist and an epoxy-containing negative photoresist.
此外,本發明的上述目的可通過框架一體型掩模的製造方法來實現,該框架一體型掩模由至少一個掩模及用於支撐掩模的框架一體形成,所述方法包括:(a)將掩模金屬膜黏合在模板上部面的步驟;(b)將形成於掩模金屬膜並製造掩模的步驟;(c)將模板裝載到具有至少一個掩模單元區域的框架上,以使掩模對應到框架的掩模單元區域的步驟;以及(d)將掩模附著到框架的步驟,步驟(b)包括:(b1)在掩模金屬膜的一面上形成圖案化的第一絕緣部的步驟;(b2)在掩模金屬膜的一面利用濕蝕刻以預定的深度形成第一掩模圖案的步驟;(b3)至少在位於第一絕緣部的垂直下部的第一掩模圖案內形成第二絕緣部的步驟;(b4)在掩模金屬膜的一面利用濕蝕刻形成從第一掩模圖案貫通掩模金屬膜的另一面的第二掩模圖案的步驟;在步驟(b1)中,在第一絕緣部圖案之間進一步形成寬度小於第一絕緣部寬度的輔助絕緣部。Furthermore, the above objects of the present invention can be achieved by a method for manufacturing a frame-integrated mask, the frame-integrated mask being integrally formed by at least one mask and a frame for supporting the mask, the method comprising: (a) The step of adhering the mask metal film to the upper face of the template; (b) the step of forming on the mask metal film and manufacturing the mask; (c) the step of loading the template on the frame having at least one mask unit area, so that the the step of masking corresponding to the mask cell area of the frame; and (d) the step of attaching the mask to the frame, the step (b) comprising: (b1) forming a patterned first insulation on one side of the mask metal film (b2) the step of forming a first mask pattern at a predetermined depth by wet etching on one side of the mask metal film; (b3) at least in the first mask pattern located at the vertical lower part of the first insulating part the step of forming the second insulating portion; (b4) the step of forming a second mask pattern penetrating the other side of the mask metal film from the first mask pattern by wet etching on one side of the mask metal film; in step (b1) wherein, an auxiliary insulating portion having a width smaller than that of the first insulating portion is further formed between the first insulating portion patterns.
一種框架一體型掩模的製造方法,該框架一體型掩模由至少一個掩模及用於支撐掩模的框架一體形成,所述方法可包括:A method of manufacturing a frame-integrated mask, the frame-integrated mask being integrally formed by at least one mask and a frame for supporting the mask, the method may include:
(a)在具有至少一個掩模單元區域的框架上裝載利用請求項7所述的製造方法製造的模板,以使掩模對應到框架的掩模單元區域的步驟;以及(b)將掩模附著到框架的步驟。 [有益效果](a) a step of loading a template manufactured by the manufacturing method of claim 7 on a frame having at least one mask unit area so that the mask corresponds to the mask unit area of the frame; and (b) placing the mask Steps to attach to the frame. [Beneficial effect]
根據如上所述的結構,本發明具有能夠準確地控制掩模圖案的尺寸和位置的效果。According to the structure as described above, the present invention has the effect that the size and position of the mask pattern can be accurately controlled.
較佳實施例之詳細說明DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT
對本發明的後述詳細說明,可參照作為本發明可實施的特定實施例圖示的附圖。為了使本技術領域的技術人員能夠實施本發明,下面具體說明這些實施例。充分詳細地說明這些實施例,以使所屬技術領域中具有通常知識者能夠實施本發明。本發明的各種實施例應理解為互為不同但不相排斥。例如,在此記載的特定形狀、結構及特性可將一實施例在不超出本發明的精神及範圍的情況下實現為其他實施例。另外,公開的每一個實施例中的個別組成要素的位置或佈置應理解為在不超出本發明精神及範圍情況下可進行變更。因此,以下詳細說明並非用於限定本發明,只要能適當地說明,本發明的範圍僅由所附的申請專利範圍和與其等同的所有範圍限定。附圖中類似的附圖標記通過各個方面指代相同或類似的功能,為了方便起見,長度、面積及厚度等及其形態還可誇張表示。For the following detailed description of the present invention, reference may be made to the accompanying drawings which illustrate specific embodiments in which the present invention may be practiced. In order to enable those skilled in the art to implement the present invention, the embodiments are specifically described below. These embodiments are described in sufficient detail to enable those of ordinary skill in the art to practice the invention. The various embodiments of the present invention should be understood to be mutually different but not mutually exclusive. For example, the specific shapes, structures, and characteristics described herein may enable one embodiment to be implemented into other embodiments without departing from the spirit and scope of the present invention. In addition, it should be understood that the position or arrangement of the individual constituent elements in each disclosed embodiment may be changed without departing from the spirit and scope of the present invention. Therefore, the following detailed description is not intended to limit the present invention, and the scope of the present invention is limited only by the scope of the appended claims and all equivalents thereof as long as it is properly described. Similar reference numerals in the drawings refer to the same or similar functions in various aspects, and for the sake of convenience, the length, area, thickness, etc. and their forms may also be exaggerated.
下面,為了能夠使本領域技術人員容易實施本發明,參照附圖對本發明涉及的優選實施例進行詳細說明。Hereinafter, in order to enable those skilled in the art to easily implement the present invention, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.
圖1是現有的將掩模10附著到框架20的過程的示意圖。FIG. 1 is a schematic diagram of a conventional process of attaching a
現有的掩模10為條型(Stick-Type)或者板型(Plate-Type),圖1的條型掩模10可以將條的兩側焊接固定到OLED像素沉積框架上並使用。掩模10的主體(Body,或者掩模膜11)中具有多個顯示單元C。一個單元C與智慧手機等的一個顯示器對應。單元C中形成有像素圖案P,以便與顯示器的各個像素對應。The existing
參照圖1的(a),沿著條型掩模10的長軸方向施加拉伸力F1-F2,並在展開的狀態下將條型掩模10裝載在方框形狀的框架20上。框架20的尺寸可以足以使一個條型掩模10的單元C1-C6位於框內部空白區域,也可以足以使多個條型掩模10的單元C1-C6位於框內部空白區域。Referring to FIG. 1( a ), tensile forces F1 - F2 are applied along the long axis direction of the
參照圖1的(b),微調施加到條型掩模10各側的拉伸力F1-F2的同時進行對準,之後通過焊接W條型掩模10側面的一部分,使條型掩模10和框架20彼此連接。圖1的(c)示出彼此連接的條型掩模10和框架的側截面。Referring to (b) of FIG. 1 , alignment is performed while finely adjusting the tensile forces F1 - F2 applied to each side of the
儘管微調施加到條型掩模10各側的拉伸力F1-F2,但是仍發生掩模單元C1-C3彼此之間對準不好的問題。例如,單元C1-C6的圖案P之間的距離彼此不同或者圖案P歪斜。由於條型掩模10具有包括多個單元C1-C6的大面積,並且具有數十μm的非常薄的厚度,所以容易因荷重而下垂或者扭曲。另外,調節拉伸力F1-F2使各個單元C1-C6全部變得平坦的同時通過顯微鏡即時確認各個單元C1-C6之間的對準狀態是非常困難的作業。但是為了避免尺寸為數μm至數十μm的掩模圖案P對超高畫質OLED的像素工藝造成壞影響,對準誤差優選不大於3μm。將如此相鄰的單元之間的對準誤差稱為像素定位精度(pixel position accuracy,PPA)。Despite fine-tuning the tensile forces F1-F2 applied to each side of the
進一步而言,將各條型掩模10分別連接到一個框架20,同時使多個條型掩模10之間及條型掩模10的多個單元C-C6之間的對準狀態精確是非常困難的作業,而且只會增加基於對準的工藝時間,從而成為降低生產效率的重要原因。Further, the
另外,將條型掩模10連接固定到框架20後,施加到條型掩模10的拉伸力F1-F2作為張力會反向地作用於框架20。該張力會導致框架20細微變形,而且會發生多個單元C-C6間的對準狀態扭曲的問題。In addition, after the
鑒於此,本發明提出能夠使掩模100與框架200形成一體型結構的框架200及框架一體型掩模。與框架200形成一體的掩模100不僅可以防止下垂或者扭曲等變形,而且可以與框架200準確地對準。In view of this, the present invention proposes a
圖2是根據本發明一實施例的框架一體型掩模的主視圖[圖2的(a)]及側截面圖[圖2的(b)]。2 is a front view [ FIG. 2( a )] and a side sectional view [ FIG. 2( b )] of a frame-integrated mask according to an embodiment of the present invention.
下面,本說明書雖然對框架一體型掩模的配置進行說明,但框架一體型掩模的結構、製造過程可理解為包括韓國專利申請第2018-0016186號的全部內容。Hereinafter, although this specification describes the arrangement of the frame-integrated mask, the structure and manufacturing process of the frame-integrated mask can be understood to include the entire contents of Korean Patent Application No. 2018-0016186.
參照圖2,框架一體型掩模可以包括多個掩模100及一個框架200。換而言之,是將多個掩模100分別附著至框架200的形態。下面為了便於說明,以四角形狀的掩模100為例進行說明,但是掩模100附著到框架200之前,可以是兩側具有用於夾持的突出部的條型掩模形狀,附著到框架200上後可以去除突出部。Referring to FIG. 2 , the frame-integrated mask may include a plurality of
各個掩模100上形成有多個掩模圖案P,一個掩模100可以形成有一個單元C。一個掩模單元C可以與智慧手機等的一個顯示器對應。A plurality of mask patterns P are formed on each
掩模100也可以為因瓦合金(invar)、超因瓦合金(super invar)、鎳(Ni)、鎳-鈷(Ni-Co)等材料。掩模100可使用由軋製(rolling)工藝或者電鑄(electroforming)生成的金屬片材(sheet)。The
框架200可以以附著多個掩模100的形式形成。考慮到熱變形,框架200優選由與掩模具有相同熱膨脹係數的因瓦合金、超級因瓦合金、鎳、鎳-鈷等材料形成。框架200可以包括大概呈四角形狀、方框形狀的邊緣框架部210。邊緣框架部210的內部可以是中空形狀。The
另外,框架200具有多個掩模單元區域CR,並且可以包括連接到邊緣框架部210的掩模單元片材部220。掩模單元片材部220可以由邊緣片材部221及第一柵格片材部223、第二柵格片材部225組成。邊緣片材部221及第一柵格片材部223、第二柵格片材部225是指在同一片材上劃分的各個部分,而且它們彼此之間形成一體。In addition, the
邊緣框架部210的厚度可以大於掩模單元片材部220的厚度,可以以數mm至數cm的厚度形成。掩模單元片材部220的厚度雖然薄於邊緣框架部210的厚度,但比掩模100厚,厚度可約為0.1mm至1mm。第一柵格片材部223、第二柵格片材部225的寬度可以約為1-5mm。The thickness of the
在平面狀片材中,除了邊緣片材部221及第一柵格片材部223、第二柵格片材部225佔據的區域以外,可以提供多個掩模單元區域CR(CR11~CR56)。In the planar sheet, a plurality of mask unit regions CR (CR11 to CR56) may be provided in addition to the regions occupied by the
掩模200具有多個掩模單元區域CR,各掩模100能夠以各掩模單元C與各掩模單元區域CR分別對應的方式附著。掩模單元C與框架200的掩模單元區域CR對應,虛設部的局部或者全部可以附著到框架200(掩模單元片材部220)上。由此,掩模100和框架200可以形成一體式結構。The
圖3是根據本發明的一實施例的掩模100的示意圖。FIG. 3 is a schematic diagram of a
掩模100可包括形成有多個掩模圖案P的掩模單元C及掩模單元C周邊的虛設部DM。可利用軋製工藝、電鑄等生成的金屬片材製造掩模100,掩模100中可形成有一個單元C。虛設部DM對應於除了單元C以外的掩模膜110[掩模金屬膜110]部分,可以只包括掩模膜110或可包括形成有與掩模圖案P相似形態的預定的虛設部圖案的掩模膜110。虛設部DM對應掩模100的邊緣且虛設部DM的局部或者全部可附著在框架200(掩模單元片材部220)上。The
掩模圖案P的寬度可小於40μm,而且掩模100的厚度可約為5-20μm。由於框架200具有多個掩模單元區域CR(CR11~CR56),因此也可以具有多個包括與各個掩模單元區域CR(CR11~CR56)分別對應的掩模單元C(C11~56)的掩模100。此外,可具有分別用於支撐後述的多個掩模100的多個模板50。The width of the mask pattern P may be less than 40 μm, and the thickness of the
圖4是根據本發明一實施例的通過在模板50上黏合掩模金屬膜110來形成掩模100以製造掩模支撐模板的過程的示意圖。4 is a schematic diagram of a process of forming a
參照圖4的(a),可提供模板50(template)。模板50是一種媒介,其一面上附著有掩模100並以支撐掩模100的狀態使掩模100移動。中心部50a可對應掩模金屬膜110的掩模單元C,邊緣部50b可對應掩模金屬膜110的虛設部DM。為了能夠整體上支撐掩模金屬膜110,模板50為面積大於或者等於掩模金屬膜110的平板狀。Referring to (a) of FIG. 4 , a template 50 (template) may be provided. The
模板50可以使用晶圓、玻璃(glass)、二氧化矽(silica)、耐熱玻璃、石英(quartz)、氧化鋁(Al2O3)、硼矽酸玻璃(borosilicate glass)、氧化鋯(zirconia)等材料。作為一示例,模板50可使用硼矽酸玻璃中具有優秀的耐熱性、耐化學性、機械強度、透明性等的BOROFLOAT®
33的材料。此外,BOROFLOAT®
33的熱膨脹係數約為3.3,與因瓦合金掩模金屬膜110的熱膨脹係數差異不大,具有便於控制掩模金屬膜110的優點。The
為了使從模板50的上部照射的雷射L能夠到達掩模100的焊接部WP(執行焊接的區域),模板50上可形成有雷射通過孔51。雷射通過孔51能夠以與焊接部WP的位置和數量對應的方式形成在模板50上。由於在掩模100的邊緣或者虛設部DM部分上以預定的間隔佈置多個焊接部WP,因此與之對應地也可以以預定間隔形成多個雷射通過孔51。作為一示例,由於在掩模100的兩側(左側/右側)虛設部DM部分上以預定間隔佈置多個焊接部WP,因此雷射通過孔51也可以在模板50的兩側(左側/右側)以預定間隔形成多個。In order to allow the laser beam L irradiated from the upper portion of the
雷射通過孔51的位置和數量不必一定與焊接部WP的位置和數量對應。例如,也可以僅對部分雷射通過孔51照射雷射L以進行焊接。此外,不與焊接部WP對應的部分雷射通過孔51在對準掩模100與模板50時也可作為對準標記而使用。如果模板50的材料對雷射L透明,則也可以不形成雷射通過孔51。The positions and the number of the
模板50的一面可形成臨時黏合部55。掩模100附著到框架200之前,臨時黏合部55可使掩模100(或者掩模金屬膜110')臨時附著在模板50的一面並支撐在模板50上。One side of the
臨時黏合部55可使用基於加熱可分離的黏合劑或者黏合片材及基於照射UV可分離的黏合劑或者黏合片材。The temporary
作為一示例,臨時黏合部55可使用液蠟(liquid wax)。液蠟可使用與半導體晶圓的拋光步驟等中使用的相同的蠟,其類型沒有特別限制。作為主要用於控制與維持力有關的黏合力、耐衝擊性等的樹脂成分,液蠟可包括如丙烯酸、醋酸乙烯酯,尼龍及各種聚合物的物質及溶劑。作為一示例,臨時黏合部55作為樹脂成份可使用丙烯腈-丁二烯橡膠(ABR,Acrylonitrile butadiene rubber)且作為溶劑成份可使用含有n-丙醇的SKYLIQUIDABR-4016。液蠟可以通過旋塗方法形成在臨時黏合部55上。As an example, liquid wax may be used for the temporary
作為液蠟的臨時黏合部55在高於85℃-100℃的溫度下黏性下降,而在低於85℃的溫度下黏性增加,一部分被固化成固體,從而可將掩模金屬膜110'與模板50固定黏合。The temporary
其次,參照圖4的(b),可以在模板50上黏合掩模金屬膜110。可以將液蠟加熱到85℃以上,並將掩模金屬膜110接觸到模板50,之後使掩模金屬膜110與模板50通過滾軸之間以進行黏合。Next, referring to (b) of FIG. 4 , the
根據一實施例,在約120℃下對模板50執行60秒的烘焙(baking),從而使臨時黏合部55的溶劑氣化之後可馬上進行掩模金屬膜層壓(lamination)工藝。層壓通過在一面上形成有臨時黏合部55的模板50上裝載掩模金屬膜110並使其通過約100℃的上部滾軸(roll)和約0℃的下部滾軸之間來執行。其結果,掩模金屬膜110可通過夾設臨時黏合部55與模板50接觸。According to one embodiment, the
作為又一示例,臨時黏合部55可使用熱剝離膠帶(thermal release tape)。熱剝離膠帶可以是中間佈置有PET薄膜等芯膜(Core Film),芯膜的兩面佈置有可熱剝離的黏著層(thermal release adhesive),且為黏著層的外廓佈置有剝離薄膜/離型膜(releasing film)的形態。在此,佈置於芯膜的兩面的黏著層可具有相互不同的可剝離溫度。As yet another example, the
根據一實施例,在剝離薄膜/離型膜被去除的狀態下,熱剝離膠帶的下部面(芯膜的下部第二黏著層)黏合於薄膜50,熱剝離膠帶的上部面(芯膜的上部第二黏著層)可黏合在掩模金屬膜110'。第一黏著層與第二黏著層的剝離溫度互不相同,因此在後面所述的圖18中,從掩模100分離模板50時,隨著對第一黏著層施加可剝離熱量,掩模100可從模板50及臨時黏合部55分離出來。According to one embodiment, when the release film/release film is removed, the lower surface of the thermal release tape (the lower second adhesive layer of the core film) is adhered to the
另外,掩模金屬膜110可使用一面或者兩面經表面缺陷去除工藝和厚度縮減工藝處理的掩模金屬膜。掩模金屬膜110的厚度可約為5μm至20μm。也可以將掩模金屬膜110黏合到模板50上之後再執行表面缺陷去除工藝和厚度縮減工藝。另外,厚度縮減工藝可只針對掩模單元C部分進行。在CMP等表面缺陷去除工藝之後,只在與掩模金屬膜的焊接部WP對應的區域形成光刻膠等絕緣部(未圖示),或者在掩模金屬膜110被黏合支撐於模板50的狀態下,只在與掩模金屬膜110的焊接部WP對應的區域形成光刻膠等絕緣部(未圖示)之後,對掩模單元C部分進行用於縮減厚度的蝕刻工藝,使焊接部WP較厚地形成並與掩模單元C產生段差,同時用於形成掩模圖案P的掩模單元C部分的表面可形成為無缺陷狀態。In addition, the
然後,參照圖4的(c),可以在掩模金屬膜110上形成圖案化的絕緣部25。絕緣部25可利用列印法等由光刻膠材料形成。Then, referring to (c) of FIG. 4 , the patterned insulating
接著,可進行掩模金屬膜110的蝕刻。可使用乾蝕刻、濕蝕刻等方法,對其沒有特別限制,進行蝕刻的結果,在絕緣部25之間的空位置26上露出的掩模金屬膜110部分被蝕刻。掩模金屬膜110中被蝕刻部分構成掩模圖案P,從而可製造形成有多個掩模圖案P的掩模100。Next, etching of the
然後,參照圖4的(d),可通過去除絕緣部25完成支撐掩模100的模板50的製造。Then, referring to (d) of FIG. 4 , the manufacture of the
下面,將對通過在掩模金屬膜110上形成掩模圖案P來製造掩模100的過程進行說明。Next, the process of manufacturing the
圖5是根據現有的掩模製造過程[(a)至(c)]及比較例的掩模的蝕刻程度(d)的示意圖。5 is a schematic diagram of the etching degree (d) of the mask according to the conventional mask manufacturing process [(a) to (c)] and the comparative example.
參照圖5,現有的掩模的製造過程僅進行濕蝕刻(wet etching)。Referring to FIG. 5 , only wet etching is performed in the manufacturing process of the existing mask.
首先,如圖5的(a)所示,可以在平面膜110'(sheet)上形成圖案化的光刻膠M。然後,如圖5的(b),可通過圖案化的光刻膠M之間的空間執行濕蝕刻WE。進行濕蝕刻WE之後,膜110'的部分空間被貫穿,從而可形成掩模圖案P'。然後,如果清洗光刻膠M,則可完成形成有掩模圖案P'的膜110'即掩模100'的製造。First, as shown in FIG. 5( a ), a patterned photoresist M may be formed on a
如圖5的(c)所示,現有的掩模100'具有掩模圖案P'的尺寸不一定的問題。由於濕蝕刻WE以各向同性進行,因此蝕刻後的形態大概呈現圓弧形狀。而且,由於濕蝕刻WE過程中很難使各部分的蝕刻速度保持一致,因此貫穿膜110'之後的貫穿圖案的寬度R1'、R1''、R1'''只能各不相同。特別是,在頻繁發生底切UC(undercut)的圖案中,不僅掩模圖案P'的下部寬度R1''形成地較寬,而且上部寬度R2''也會形成地較寬,而較少發生底切UC的圖案中下部寬度R1'、R1'''及上部寬度R2'、R2'''相對形成地較窄。As shown in FIG. 5( c ), the
結果,現有的掩模100'存在各個掩模圖案P'的尺寸不均勻的問題。就超高畫質的OLED而言,目前QHD畫質為500-600PPI (pixel per inch),像素的尺寸達到約30-50μm,而4KUHD、8KUHD高畫質具有比其更高的-860PPI、-1600PPI等的解析度,因此細微的尺寸差異也有可能導致產品不良。As a result, the conventional mask 100' has a problem that the size of each mask pattern P' is not uniform. As far as ultra-high-quality OLEDs are concerned, the current QHD quality is 500-600PPI (pixel per inch), and the pixel size reaches about 30-50μm, while 4KUHD and 8KUHD high-quality have higher -860PPI, - 1600PPI and other resolutions, so slight differences in size may cause product defects.
參照圖5的(d),由於濕蝕刻WE以各向同性進行,因此蝕刻後的形態大概呈現圓弧形狀。此外,進行濕蝕刻的過程中,各個部分蝕刻的速度很難完全相同,如果僅通過1次濕蝕刻貫穿掩模金屬膜110以形成掩模圖案,則其偏差會更大。例如,掩模圖案111與掩模圖案112的濕蝕刻速度雖不同,但上部寬度(底切)的差異卻不是很大。然而,通過形成掩模圖案111所貫穿的掩模金屬膜110的下部寬度PD1與通過形成掩模圖案112所貫穿的掩模金屬膜110的下部寬度PD2的差遠遠大於上部寬度的差。這是由於濕蝕刻以各向同性進行而產生的結果。換而言之,決定像素尺寸的寬度是掩模圖案111、112的下部寬度PD1、PD2,而不是上部寬度,因此,可考慮採用不同於1次濕蝕刻的其它濕蝕刻方法控制下部寬度PD1、PD2的方案。Referring to FIG. 5( d ), since the wet etching WE is performed isotropically, the shape after etching is approximately an arc shape. In addition, in the process of wet etching, the etching speed of each part is difficult to be completely the same. If only one wet etching is performed to penetrate the
因此,根據本發明的一方面,通過多次濕蝕刻可提高濕蝕刻過程中掩模圖案的精準度。Therefore, according to an aspect of the present invention, the precision of the mask pattern in the wet etching process can be improved by multiple wet etchings.
圖6至圖7是根據本發明一實施例的掩模的製造過程的示意圖。6 to 7 are schematic diagrams of a manufacturing process of a mask according to an embodiment of the present invention.
參照圖6的(a),首先可提供作為金屬片材的掩模金屬膜110。掩模金屬膜110可利用軋製工藝、電鑄等生成,掩模金屬膜110的材料可以是因瓦合金(invar)、超因瓦合金(super invar)、鎳(Ni)、鎳-鈷(Ni-Co)等。Referring to (a) of FIG. 6 , first, a
然後,可以在掩模金屬膜110的一面(上面)形成圖案化的第2-1絕緣部M1。第2-1絕緣部M1可通過列印法等由光刻膠材料形成。需要說明的是,圖6至圖7的絕緣部M1、M2及M3作為用於形成掩模圖案P的絕緣部,對應於後述的絕緣部25,有別於隔板絕緣部23。Then, the patterned 2-1 insulating portion M1 may be formed on one surface (upper surface) of the
第一絕緣部M1可以是黑色矩陣光刻膠(black matrix photoresist)或者上部形成有金屬鍍膜的光刻膠材料。此外,第一絕緣部M1的材料可以是不同於後述的第二絕緣部M2或者第三絕緣部M3的光刻膠材料,可優選為環氧樹脂系的光刻膠材料。黑色矩陣光刻膠可以是包含黑色矩陣樹脂(resin black matrix)的材料,該黑色矩陣樹脂(resin black matrix)用於形成顯示面板的黑色矩陣。黑色矩陣光刻膠的遮光效果會比一般的光刻膠優秀。此外,上部形成有金屬鍍膜的光刻膠通過金屬鍍膜遮擋從上部照射的光的遮光效果也較佳。第一絕緣部M1可以是正型(positive type)光刻膠材料。The first insulating portion M1 may be a black matrix photoresist or a photoresist material with a metal plating film formed on the upper portion. In addition, the material of the first insulating portion M1 may be a photoresist material different from that of the second insulating portion M2 or the third insulating portion M3 described later, and may preferably be an epoxy-based photoresist material. The black matrix photoresist may be a material including resin black matrix, which is used to form the black matrix of the display panel. The shading effect of black matrix photoresist will be better than that of general photoresist. In addition, the photoresist with the metal plating film formed on the upper part has a better light-shielding effect of shielding the light irradiated from the upper part by the metal plating film. The first insulating part M1 may be a positive type photoresist material.
然後,參照圖6的(b),可以在掩模金屬膜110的一面(上面)上通過濕蝕刻WE1形成預定深度的第一掩模圖案P1'。雖然第一掩模圖案P1'以未貫穿掩模金屬膜110且以大致為圓弧狀形成,但是在根據圖11說明的本發明中第一掩模圖案(對應主蝕刻圖案P1-2)的特徵是包括孔SN。為了便於說明,對圖6進行說明時排除了孔部分。即,除去孔SN以外的第一掩模圖案P1'的深度值可小於掩模金屬膜110的厚度。Then, referring to (b) of FIG. 6 , a first mask pattern P1 ′ of a predetermined depth may be formed on one side (upper surface) of the
濕蝕刻WE1由於具有各向同性的蝕刻特性,第一掩模圖案P1的寬度R2與第一絕緣部M1的圖案間的間距R3不同,可具有比第一絕緣部M1的圖案間的間距R3更寬的寬度。換而言之,由於在第一絕緣部M1的兩側下部形成底切UC(undercut),因此第一掩模圖案P1'的寬度R2相比於第一絕緣部M1的圖案之間的間距R3,可多出形成底切UC的寬度。Due to the isotropic etching characteristics of the wet etching WE1, the width R2 of the first mask pattern P1 is different from the spacing R3 between the patterns of the first insulating portion M1, and may be larger than the spacing R3 between the patterns of the first insulating portion M1. wide width. In other words, since an undercut UC (undercut) is formed on the lower portions of both sides of the first insulating portion M1, the width R2 of the first mask pattern P1 ′ is compared with the interval R3 between the patterns of the first insulating portion M1 , which can be more than the width of the undercut UC.
然後,參照圖6的(c),可以在掩模金屬膜110的一面(上面)形成第二絕緣部M2。第二絕緣部M2可通過列印法等由光刻膠材料形成。對於第二絕緣部M2,由於其需要保留在後面所述的形成底切UC的空間上,因此優選為正型光刻膠材料。Then, referring to FIG. 6( c ), the second insulating portion M2 may be formed on one surface (upper surface) of the
由於第二絕緣部M2形成於掩模金屬膜110的一面(上面)上,因此一部分形成於第一絕緣部M1上,而另一部分填充到第一掩模圖案P1內部。Since the second insulating portion M2 is formed on one side (upper surface) of the
第二絕緣部M2可使用稀釋(dilution)於溶劑中的光刻膠。如果高濃度的光刻膠溶液形成在掩模金屬膜110與第一絕緣部M1上,則所述高濃度的光刻膠溶液與第一絕緣部M1的光刻膠反應,從而有可能會使第一絕緣部M1的一部分溶解。因此,為了對第一絕緣部M1不產生影響,第二絕緣部M2可使用通過在溶劑中稀釋濃度下降的光刻膠。The second insulating portion M2 may use a photoresist diluted in a solvent. If a high-concentration photoresist solution is formed on the
然後,參照圖7的(d),可去除第二絕緣部M2的一部分。作為一示例,可通過烘焙(baking)以揮發的形式去除第二絕緣部M2的一部分。第二絕緣部M2的溶劑通過烘焙處理被揮發後只剩下光刻膠成分。因此,第二絕緣部M2'在第一掩模圖案P1的露出部分及第一絕緣部M1的表面剩下較薄部分,如塗覆的膜。留下的第二絕緣部M2'的厚度優選為小於數μm左右,從而不會影響第一絕緣部M1的圖案寬度R3或者第一掩模圖案P1的圖案寬度R2。Then, referring to (d) of FIG. 7 , a part of the second insulating portion M2 may be removed. As an example, a part of the second insulating portion M2 may be removed in the form of volatilization by baking. After the solvent of the second insulating portion M2 is volatilized by the baking process, only the photoresist component remains. Therefore, the second insulating portion M2' leaves a thinner portion, such as a coated film, on the exposed portion of the first mask pattern P1 and the surface of the first insulating portion M1. The thickness of the remaining second insulating portion M2 ′ is preferably less than several μm, so as not to affect the pattern width R3 of the first insulating portion M1 or the pattern width R2 of the first mask pattern P1 .
然後,參照圖7的(e),可以在掩模金屬膜110的一面(上面)上進行曝光L。在第一絕緣部M1的上部進行曝光L時,第一絕緣部M1可起到曝光掩模的作用。由於第一絕緣部M1是黑色矩陣光刻膠(black matrix photoresist)或者上部形成有金屬鍍膜的光刻膠材料,因此遮光效果優秀。因此,位於第一絕緣部M1的垂直下部的第二絕緣部M2''[參照圖7的(f)]不會被曝光L,而其他的第二絕緣部M2'會被曝光L。Then, referring to (e) of FIG. 7 , exposure L may be performed on one side (upper surface) of the
然後,參照圖7的(f),如果曝光L後進行顯影,則會留下沒有被曝光L的第二絕緣部M2''部分,而其他第二絕緣部M2'會被去除。由於第二絕緣部M2'為正型光刻膠,因此曝光L的部分會被去除。第二絕緣部M2''保留的空間能夠與在第一絕緣部M1的兩側下部形成底切UC[參照圖6的(b)步驟]的空間對應。Then, referring to (f) of FIG. 7 , if the exposure L is followed by development, the portion of the second insulating portion M2 ″ that has not been exposed to the exposure L remains, and the other second insulating portion M2 ′ is removed. Since the second insulating portion M2 ′ is a positive type photoresist, the exposed portion L will be removed. The space left by the second insulating portion M2 ″ can correspond to the space where the undercut UC is formed in the lower portions of both sides of the first insulating portion M1 [see FIG. 6( b ) step].
然後,參照圖7的(g),在掩模金屬膜110的第一掩模圖案P1上可進行濕蝕刻WE2。濕蝕刻液可滲透到第一絕緣部M1的圖案之間的空間及第一掩模圖案P1的空間,從而進行濕蝕刻WE2。第二掩模圖案P2可貫穿掩模金屬膜110而形成。即,通過從第一掩模圖案P1的下端貫穿掩模金屬膜110的另一面而形成。Then, referring to (g) of FIG. 7 , wet etching WE2 may be performed on the first mask pattern P1 of the
此時,第一掩模圖案P1上留下第二絕緣部M2''。留下的第二絕緣部M2''可起到濕蝕刻的掩模的作用。即,第二絕緣部M2''掩蔽(masking)蝕刻液並防止蝕刻液向第一掩模圖案P1的側面方向蝕刻,而是向第一掩模圖案P1的下部表面方向進行蝕刻。At this time, the second insulating portion M2 ″ remains on the first mask pattern P1 . The remaining second insulating portion M2 ″ may function as a mask for wet etching. That is, the second insulating portion M2 ″ masks the etchant and prevents the etchant from being etched toward the side surface of the first mask pattern P1 , but etches toward the lower surface of the first mask pattern P1 .
由於第二絕緣部M2''佈置於第一絕緣部M1的垂直下部的底切UC空間,因此第二絕緣部M2''的圖案寬度實質上與第一絕緣部M1的圖案寬度R3對應。由此,第二掩模圖案P2相當於對第一絕緣部M1的圖案之間的間距R3進行濕蝕刻WE2。因此,第二掩模圖案P2的寬度R1可小於第一掩模圖案P1的寬度R2。Since the second insulating portion M2 ″ is arranged in the undercut UC space of the vertical lower portion of the first insulating portion M1 , the pattern width of the second insulating portion M2 ″ substantially corresponds to the pattern width R3 of the first insulating portion M1 . Thus, the second mask pattern P2 corresponds to wet etching WE2 for the interval R3 between the patterns of the first insulating portion M1. Therefore, the width R1 of the second mask pattern P2 may be smaller than the width R2 of the first mask pattern P1.
由於第二掩模圖案P2的寬度界定像素的寬度,因此第二掩模圖案P2的寬度優選小於35μm。如果第二掩模圖案P2的厚度過厚,則難以控制第二掩模圖案P2的寬度R1,且寬度R1的均勻性下降,掩模圖案P的形狀整體上有可能不是錐形/倒錐形,因此第二掩模圖案P2的厚度優選為小於第一掩模圖案P1的厚度。第二掩模圖案P2的厚度優選是接近於0,當考慮到像素的尺寸時,例如,第二掩模圖案P2的厚度優選約為0.5至3.0μm,更優選為0.5至2.0μm。Since the width of the second mask pattern P2 defines the width of the pixel, the width of the second mask pattern P2 is preferably less than 35 μm. If the thickness of the second mask pattern P2 is too thick, it is difficult to control the width R1 of the second mask pattern P2, and the uniformity of the width R1 decreases, and the overall shape of the mask pattern P may not be tapered/inverted tapered , so the thickness of the second mask pattern P2 is preferably smaller than that of the first mask pattern P1. The thickness of the second mask pattern P2 is preferably close to 0, and when the size of the pixel is considered, for example, the thickness of the second mask pattern P2 is preferably about 0.5 to 3.0 μm, more preferably 0.5 to 2.0 μm.
相連的第一掩模圖案P1與第二掩模圖案P2形狀的和可構成掩模圖案P。The sum of the shapes of the connected first mask patterns P1 and the second mask patterns P2 may constitute a mask pattern P. FIG.
然後,參照圖7的(h),通過去除第一絕緣部M1和第二絕緣部M2''可完成掩模100的製造。第一掩模圖案P1、P2包括傾斜的面,而且第二掩模圖案P2的高度非常低,因此如果將第一掩模圖案P1與第二掩模圖案P2的形狀加起來,則整體上呈現錐形或者倒錐形。Then, referring to (h) of FIG. 7 , the fabrication of the
另外,在圖6的(b)與(c)步驟之間,還可進行(b2)和(b3)步驟。In addition, between steps (b) and (c) of FIG. 6 , steps (b2) and (b3) may be performed.
參照圖6的(b2),第一掩模圖案P1'中可形成第三絕緣部M3。在第一絕緣部M1之間露出的第一掩模圖案P1'的至少一部分上可形成有第三絕緣部M3。例如,在相鄰的一對第一絕緣部M1的圖案的間隔內,即第一掩模圖案P1'上可形成具有寬度R3的第三絕緣部M3。Referring to (b2) of FIG. 6, a third insulating portion M3 may be formed in the first mask pattern P1'. A third insulating portion M3 may be formed on at least a portion of the first mask pattern P1 ′ exposed between the first insulating portions M1 . For example, the third insulating portion M3 having the width R3 may be formed in the interval between the patterns of the adjacent pair of the first insulating portions M1 , that is, on the first mask pattern P1 ′.
為了便於曝光,第三絕緣部M3優選使用負型(negative type)光刻膠材料。在第一掩模圖案P1'內填充負型光刻膠並對上部進行曝光時,第一絕緣部M1相對於第三絕緣部M3起到曝光掩模的作用,並且可做到只剩下在第一絕緣部M1的圖案之間曝光的第三絕緣部M3。此時,如圖6的(c)所圖示,在第一掩模圖案P1'上可形成具有寬度R3的第三緣部M3。In order to facilitate exposure, the third insulating portion M3 preferably uses a negative type photoresist material. When the negative photoresist is filled in the first mask pattern P1' and the upper part is exposed, the first insulating portion M1 functions as an exposure mask relative to the third insulating portion M3, and only the The third insulating portion M3 is exposed between the patterns of the first insulating portion M1. At this time, as illustrated in FIG. 6( c ), a third edge portion M3 having a width R3 may be formed on the first mask pattern P1 ′.
然後,參照圖6的(b3),可進一步對第一掩模圖案P1'進行濕蝕刻WE2。由於第一掩模圖案P1'的局部為形成有第三絕緣部M3的狀態,因此不會進一步向下蝕刻第一掩模圖案P1'而是進行側方向的蝕刻。因此,第一掩模圖案P1'的寬度可大於R2(P1'->P1)。Then, referring to (b3) of FIG. 6, the first mask pattern P1' may be further subjected to wet etching WE2. Since part of the first mask pattern P1 ′ is in a state where the third insulating portion M3 is formed, the first mask pattern P1 ′ is not further etched downward, but is etched in the lateral direction. Therefore, the width of the first mask pattern P1' may be greater than R2 (P1'->P1).
執行圖6的(b2)和(b3)步驟的具體理由如下。Specific reasons for performing steps (b2) and (b3) of FIG. 6 are as follows.
如果省略圖6的(b2)和(b3)步驟並在形成第一掩模圖案P1'之後形成第一掩模圖案P2,則會導致很難降低掩模圖案P'(P1'、P2)的錐角。基於第一掩模圖案P1'的各向同性的蝕刻工藝的特徵,側面很難具有較小的角度(水平面與掩模圖案的側形成的角度),由於角度超過60°或者接近垂直,即使進行兩次濕蝕刻仍然存在角度超過70°的情況。整體上,掩模圖案P的側面與水平面形成的角度只有形成30°至70°左右時,才能夠防止陰影效果(Shadow Effect),如果超出上述角度,則仍然會產生陰影效果,從而導致很難均勻地形成OLED像素。If steps (b2) and (b3) of FIG. 6 are omitted and the first mask pattern P2 is formed after the first mask pattern P1' is formed, it will result in difficulty in reducing the mask pattern P' (P1', P2) cone angle. Based on the characteristics of the isotropic etching process of the first mask pattern P1', it is difficult for the side surface to have a small angle (the angle formed by the horizontal plane and the side of the mask pattern), since the angle exceeds 60° or is close to vertical, even if the There are still cases where the angle exceeds 70° for both wet etchings. On the whole, only when the angle formed by the side surface of the mask pattern P and the horizontal plane is about 30° to 70°, the shadow effect (Shadow Effect) can be prevented. OLED pixels are formed uniformly.
此外,為了使掩模圖案P的表面不粗糙且均勻地形成,濕蝕刻工藝需要在短時間內進行。然而,如果濕蝕刻工藝在短時間內進行,則第一掩模圖案P1'側面角度很難形成小角度。最終,如果為了使第一掩模圖案P1'側面角度形成小角度而延長濕蝕刻工藝的時間,則會出現掩模圖案的表面粗糙且形態不均勻的問題。In addition, in order to form the surface of the mask pattern P uniformly without being rough, the wet etching process needs to be performed in a short time. However, if the wet etching process is performed in a short time, it is difficult for the side angle of the first mask pattern P1' to form a small angle. Finally, if the time of the wet etching process is prolonged in order to make the side angle of the first mask pattern P1' form a small angle, the problems of rough surface and uneven shape of the mask pattern will occur.
因此,在第一掩模圖案P1'內進一步形成第三絕緣部M3以防止第一掩模圖案P1'的下部受到蝕刻,隨著朝向第一掩模圖案P1'的側面方向進一步進行濕蝕刻WE3(P1'->P1),具有可減小第一掩模圖案P1的側面與水平面形成的角度(a1->a2)的效果。由於分兩次進行濕蝕刻來形成第一掩模圖案P1,因此ㅡ每次蝕刻工藝無需持續長時間,從而也可使掩模圖案P的表面形態均勻地形成。Therefore, the third insulating portion M3 is further formed in the first mask pattern P1 ′ to prevent the lower portion of the first mask pattern P1 ′ from being etched, and the wet etching WE3 is further performed toward the side of the first mask pattern P1 ′. (P1'->P1), there is an effect of reducing the angle (a1->a2) formed by the side surface of the first mask pattern P1 and the horizontal plane. Since the first mask pattern P1 is formed by performing the wet etching in two steps, (c) each etching process does not need to last for a long time, so that the surface morphology of the mask pattern P can be uniformly formed.
進一步進行濕蝕刻WE3並形成降低側面與水平面形成的角度a2的第一掩模圖案P1之後,可去除第三絕緣部M3。After further wet etching WE3 and forming the first mask pattern P1 which reduces the angle a2 formed by the side surface and the horizontal plane, the third insulating portion M3 may be removed.
圖8是根據本發明的一實施例的掩模金屬膜110的示意圖。FIG. 8 is a schematic diagram of a
圖8的(a)為止的過程與圖6的(a)至(b)中說明的過程相同。但,圖8的(a)中對第一絕緣部M1的濕蝕刻WE1中蝕刻程度不同的第一掩模圖案P1-1與第一掩模圖案P1-2進行比較說明。The process up to (a) of FIG. 8 is the same as the process described in (a) to (b) of FIG. 6 . However, in FIG. 8( a ), the first mask pattern P1 - 1 and the first mask pattern P1 - 2 having different etching degrees in the wet etching WE1 of the first insulating portion M1 will be described in comparison.
參照圖8的(a),即使是同樣的濕蝕刻WE1-1、WE1-2,根據蝕刻部分不同也會出現度不同的蝕刻程,如第一掩模圖案P1-1與第一掩模圖案P1-2所示。第一掩模圖案P1-1的圖案寬度R2-1小於第一掩模圖案P1-2的圖案寬度R2-2,這種圖案寬度R2-1、R2-2的差異將對像素的解析度帶來壞影響。Referring to FIG. 8( a ), even for the same wet etching WE1-1 and WE1-2, different etching processes will occur depending on the etching portion, such as the first mask pattern P1-1 and the first mask pattern shown in P1-2. The pattern width R2-1 of the first mask pattern P1-1 is smaller than the pattern width R2-2 of the first mask pattern P1-2, and the difference between the pattern widths R2-1 and R2-2 will affect the resolution of the pixels. bad influence.
然後,參照圖8的(b),可以確認的是,執行圖6的(c)至圖7的(f)中說明的過程之後,第一絕緣部M1的垂直下部空間上可分別形成第二絕緣部M2''-1、M2''-2。根據第一絕緣部M1下部的底切空間的尺寸不同,各個第二絕緣部M2''-1、M2''-2的形成大小會不同。第二絕緣部M2''-1的尺寸雖小於第二絕緣部M2''-2的尺寸,但第二絕緣部M2''-1、M2''-2的圖案寬度會相同。各第二絕緣部M2''-1、M2''-2的圖案寬度R3可相同,以對應於第一絕緣部M1的圖案寬度R3。Then, referring to FIG. 8( b ), it can be confirmed that after performing the processes described in FIG. 6( c ) to FIG. 7( f ), the vertical lower space of the first insulating portion M1 can be formed with the Insulation parts M2''-1, M2''-2. Depending on the size of the undercut space at the lower portion of the first insulating portion M1, the formation size of each of the second insulating portions M2"-1 and M2"-2 will be different. Although the size of the second insulating portion M2"-1 is smaller than that of the second insulating portion M2"-2, the pattern widths of the second insulating portions M2"-1 and M2"-2 are the same. The pattern width R3 of each of the second insulating portions M2 ″-1 and M2 ″-2 may be the same to correspond to the pattern width R3 of the first insulating portion M1 .
然後,參照圖8的(c),將第二絕緣部M2''-1、M2''-2分別作為濕蝕刻的掩模使用並進行濕蝕刻WE2,從而可貫穿掩模金屬膜110。其結果,所形成的第二掩模圖案P2-1、P2-2的寬度R1-1、R1-2的偏差會明顯小於第一掩模圖案P1-1、P1-2的寬度R2-1、R2-2的偏差。這是因為以第一掩模圖案P1-1、P1-2深度對掩模金屬膜110進行第一次濕蝕刻之後再對剩下的掩模金屬膜110的厚度進行第二次濕蝕刻,同時進行第二次濕蝕刻的第二絕緣部M2''-1、M2''-2的圖案寬度與進行第一次濕蝕刻的第一絕緣部M1的圖案寬度實質上相同的緣故。Then, referring to FIG. 8( c ), the second insulating portions M2 ″- 1 and M2 ″- 2 are respectively used as masks for wet etching to perform wet etching WE2 so that the
如上所述,本發明的掩模製造方法通過進行多次濕蝕刻具有可形成所需尺寸的掩模圖案P的效果。具體地,隨著部分第二絕緣部M2''被保留,形成第二掩模圖案P2的濕蝕刻WE2相比於形成第一掩模圖案P1的濕蝕刻WE1、WE2,將在更薄的寬度及更薄的厚度上進行,因此具有容易控制第二掩模圖案P2的寬度R1的優點。另一方面,由於可通過濕蝕刻形成傾斜面,因此能夠形成可防止陰影效果的掩模圖案P。As described above, the mask manufacturing method of the present invention has the effect that the mask pattern P of the desired size can be formed by performing the wet etching a plurality of times. Specifically, as part of the second insulating portion M2 ″ is retained, the wet etching WE2 for forming the second mask pattern P2 will have a thinner width than the wet etching WE1 and WE2 for forming the first mask pattern P1 and thinner thickness, it has the advantage of easy control of the width R1 of the second mask pattern P2. On the other hand, since the inclined surface can be formed by wet etching, the mask pattern P that can prevent the shadow effect can be formed.
圖9是根據本發明一實施例的掩模支撐模板的製造過程的示意圖。9 is a schematic diagram of a manufacturing process of a mask support template according to an embodiment of the present invention.
本發明可將圖6至圖7的掩模圖案P的形成過程在將掩模金屬膜110黏合到模板50上之後進行。圖9的(a)、(b)、(c)的過程對應圖4的(b)、(c)、(d)過程,因此相同部分的說明將被省略。In the present invention, the forming process of the mask pattern P of FIGS. 6 to 7 may be performed after the
參照圖9的(a),掩模金屬膜110可通過夾設臨時黏合部55黏合到模板上。只是,應該防止蝕刻液進入掩模金屬膜110與臨時黏合部55的界面使臨時黏合部55/模板50損傷從而引起掩模圖案P的蝕刻誤差。由此,在掩模金屬膜110的一面上形成隔板絕緣部23的狀態下,可將掩模金屬膜110黏合到模板50的上部面。即,可使形成有隔板絕緣部23的掩模金屬膜110的面朝向模板50的上部面。掩模金屬膜110與模板50可以通過夾設隔板絕緣部23和臨時黏合部55相互黏合。Referring to (a) of FIG. 9 , the
隔板絕緣部23可由不受蝕刻液蝕刻的光刻膠材料通過列印方法等形成於掩模金屬膜110上。此外,為了經多次濕蝕刻工藝後仍保持圓形,隔板絕緣部23可包括固化負型光刻膠、含有環氧樹脂的負型光刻膠中的至少任意一個。作為一示例,優選使用環氧樹脂系的SU-8光刻膠、黑色矩陣光刻膠(black matrix),從而使其在臨時黏合部55的烘培、第二絕緣部M2的烘培(參照圖7的(d))等過程中一併固化。The
然後,參照圖9的(b),可以在掩模金屬膜110上形成圖案化的絕緣部25。絕緣部25對應圖5(d)的絕緣部25,或者可對應圖6至圖7的絕緣部M1、M2及M3。Then, referring to (b) of FIG. 9 , the patterned insulating
接著,可進行掩模金屬膜110的蝕刻。可使用圖4(d)的蝕刻方法或者圖6至圖7的蝕刻方法形成掩模圖案P。Next, etching of the
然後,參照圖9的(c),可通過去除絕緣部25完成支撐掩模100的模板50的製造。可製造包括掩模100/隔板絕緣部23/臨時黏合部55/模板50的掩模支撐模板。Then, referring to (c) of FIG. 9 , the manufacture of the
下面,對製造進一步包括隔板絕緣部23的掩模支撐模板的理由進行更詳細的說明。Next, the reason for producing the mask support template further including the
圖10是根據比較例和本發明一實施例的掩模金屬膜的蝕刻程度的示意圖。FIG. 10 is a schematic diagram illustrating the etching degree of the mask metal film according to the comparative example and an embodiment of the present invention.
如圖6至圖7所示,只在掩模金屬膜110的一面(例如,上面)進行蝕刻更為有利。如果在兩面同時進行蝕刻,則可能會導致掩模金屬膜110厚度不均勻,很難得到期待的掩模圖案P的形態。在一面進行濕蝕刻WE,且由於進行多次濕蝕刻,因此蝕刻液不洩露到掩模金屬膜110的另一面(例如,下面)是非常重要的。As shown in FIGS. 6 to 7 , it is more advantageous to perform etching only on one side (eg, the upper side) of the
圖10(a)是無隔板絕緣部23的情況下掩模金屬膜110通過夾設臨時黏合部55黏合到模板50上的比較例。如圖7的(g)中詳述,由於第一掩模圖案P1(P1-1、P1-2)的厚度比較厚而且第二掩模圖案P2的寬度界定像素的寬度,因此第二掩模圖案P2的寬度優選接近0μm。FIG. 10( a ) is a comparative example in which the
因此,雖然第一掩模圖案P1優選以最大的深度形成,但是即使是同樣的濕蝕刻WE1-1、WE1-2,根據蝕刻部位不同,其蝕刻程度也會不同,如第一掩模圖案P1-1與第一掩模圖案P1-2'所示。而且,通過準確地控制蝕刻WE1-1、WE1-2速度來保留最小厚度是十分困難的工藝。如同圖10(a)右側的第一掩模圖案P1-2',可能會發生形成孔SN程度的蝕刻WE1-2的情況。Therefore, although the first mask pattern P1 is preferably formed with the maximum depth, even for the same wet etching WE1-1 and WE1-2, the degree of etching varies depending on the etched position. For example, the first mask pattern P1 -1 is shown with the first mask pattern P1-2'. Moreover, it is a very difficult process to retain the minimum thickness by accurately controlling the etching speed of WE1-1, WE1-2. Like the first mask pattern P1-2' on the right side of FIG. 10(a), etching WE1-2 to the extent of forming holes SN may occur.
這種情況下,下部露出的臨時黏合部55也可能會產生由於濕蝕刻WE1-2而受到損傷(55->55')的問題。除了臨時黏合部55',模板50也會受到損傷。In this case, the temporary
此外,當蝕刻液進入受損的臨時黏合部55'與掩模金屬膜110的界面之間時WE1-2',會進一步蝕刻第一掩模圖案P1的下部,進而引發圖案的尺寸形成過大或者局部不定形缺陷的問題。In addition, when the etchant enters between the interface between the damaged temporary
因此,如圖10的(b)所示,本發明通過在掩模金屬膜110與臨時黏合部55之間進一步夾設隔板絕緣部23,在第一濕蝕刻WE1(WE1-1、WE1-2)過程中即使第一掩模圖案P1-2形成貫通掩模金屬膜110的孔SN,仍然能夠防止蝕刻液進入掩模金屬膜110的下部面。由此,在即將形成孔SN之前、形成孔SN之後,第一掩模圖案P1的深度可形成地最深,即使形成孔SN,也能防止蝕刻液進入掩模金屬膜110的下部面。Therefore, as shown in (b) of FIG. 10 , in the present invention, the
隔板絕緣部23由於包括固化負型光刻膠、含有環氧樹脂的負型光刻膠、黑色矩陣光刻膠(black matrix)中至少任意一個,因此即使執行第一濕蝕刻WE1工藝、第二濕蝕刻WE2、第三濕蝕刻WE3等後續的蝕刻工藝,也能夠承受而不會被蝕刻液熔化。由此,即使第一掩模圖案P1-2貫穿掩模金屬膜110,圖案的寬度也不會被擴大,並具有可保持與第2-1絕緣部M1的寬度對應的效果。Since the
此外,如圖10的(c)所示,在此基礎上,本發明可在第一絕緣部M1的圖案之間進一步形成寬度小於第一絕緣部M1寬度的輔助絕緣部M4。如圖10的(b)所示,即使第一掩模圖案P1-2'以形成孔SN的深度形成,第一掩模圖案P1-2'也能夠以各向同性蝕刻的形態形成。因此,在隔板絕緣部23和掩模金屬膜110的界面部分即掩模金屬膜110的下部,可能會發生錐角變大的問題。而且,如果中間形成有穿孔SN,則會加大朝向孔SN側面的蝕刻程度的同時使孔SN過度地變大,進而會導致掩模圖案P的尺寸很難得到控制。In addition, as shown in FIG. 10( c ), on this basis, the present invention can further form auxiliary insulating portions M4 with a width smaller than the width of the first insulating portion M1 between the patterns of the first insulating portion M1 . As shown in FIG. 10( b ), even if the first mask pattern P1 - 2 ′ is formed at a depth at which the hole SN is formed, the first mask pattern P1 - 2 ′ can be formed in the form of isotropic etching. Therefore, there may be a problem that the taper angle becomes large at the interface portion between the
因此,本發明如圖10的(c)所示,通過在第一絕緣部M1的圖案之間進一步形成有寬度小於第一絕緣部M1的寬度的輔助絕緣部M4,從而使孔SN或者第一掩模圖案P1(P1-1,P1-2)的中間部分穿透較晚。輔助絕緣部M4佈置於第一絕緣部M1的圖案之間,從而可防止蝕刻液從第一絕緣部M1的圖案中間進入並以中間為起點進行蝕刻。由此,如圖10的(c)中用虛線表示,在(1)左側第一絕緣部M1與輔助絕緣部M4之間以及(2)輔助絕緣部M4與右側第一絕緣部M1之間的兩處進行蝕刻從而可形成底切。其結果,蝕刻液進入的起點變為輔助絕緣部M4的左/右側,從而第一掩模圖案P1(P1-1,P1-2)相比於圖10的(b)的第一掩模圖案(P1-1',P1-2'),具有更大寬度的效果。而且,由於以不形成或者較晚地形成孔SN的程度進行蝕刻,因此第一掩模圖案P1能夠以最大深度形成。Therefore, in the present invention, as shown in FIG. 10( c ), by further forming an auxiliary insulating portion M4 with a width smaller than the width of the first insulating portion M1 between the patterns of the first insulating portion M1 , the hole SN or the first insulating portion M1 is formed. The middle portion of the mask pattern P1 (P1-1, P1-2) penetrates later. The auxiliary insulating portion M4 is arranged between the patterns of the first insulating portion M1, so that the etching solution can be prevented from entering from the middle of the pattern of the first insulating portion M1 and etching is performed starting from the middle. As a result, as indicated by the dotted line in FIG. 10( c ), between (1) the left first insulating portion M1 and the auxiliary insulating portion M4 and (2) between the auxiliary insulating portion M4 and the right first insulating portion M1 Etching is performed in two places so that an undercut can be formed. As a result, the starting point from which the etching solution enters becomes the left/right side of the auxiliary insulating portion M4, so that the first mask pattern P1 (P1-1, P1-2) is compared with the first mask pattern of FIG. 10(b) . (P1-1', P1-2'), with the effect of a larger width. Also, since the etching is performed to such an extent that the hole SN is not formed or is formed later, the first mask pattern P1 can be formed with the maximum depth.
根據一實施例,輔助絕緣部M4對應第一絕緣部M1的形態可形成圓形、多邊形等。輔助絕緣部M4的形成過程可與第一絕緣部M1形成過程相同,而只有圖案尺寸不同。當然,輔助絕緣部M4可以採用與第一絕緣部M1相同的材料。According to an embodiment, the shape of the auxiliary insulating portion M4 corresponding to the first insulating portion M1 may be formed into a circle, a polygon, or the like. The formation process of the auxiliary insulating portion M4 may be the same as the formation process of the first insulating portion M1, and only the pattern size is different. Of course, the auxiliary insulating portion M4 can be made of the same material as the first insulating portion M1.
此外,根據一實施例,輔助絕緣部M4還可以與第一絕緣部M1連接。如果輔助絕緣部M4為與第一絕緣部M1不連接的狀態,則隨著第一掩模圖案P1的蝕刻進行,支撐輔助絕緣部M4的掩模金屬膜110的部分逐漸消失,從而會導致輔助絕緣部M4漂浮在蝕刻液上。這樣會污染蝕刻液,或者作為不良因素妨礙圖案蝕刻,因此可以與第一絕緣部M1連接並固定。只是,連接的形態優選形成為遠小於輔助絕緣部(M3)的寬度,例如一半以下寬度的橋(bridge)。In addition, according to an embodiment, the auxiliary insulating portion M4 may also be connected to the first insulating portion M1. If the auxiliary insulating portion M4 is not connected to the first insulating portion M1, as the etching of the first mask pattern P1 proceeds, the part of the
圖11是用於對比比較例和根據本發明一實施例的掩模金屬膜的蝕刻形態的意圖。如果圖11的(a1)是根據比較例的第一掩模圖案(P1-1')的形態,(a2)是根據本發明一實施例的第一掩模圖案P1-1形態,則(a1)、(a2)將分別對應圖10的(b)、(c)。圖11的(b)是將兩形態的第一掩模圖案P1-1、P1-1'重疊的示意圖。FIG. 11 is a diagram for comparing the etching morphology of the mask metal film according to the comparative example and an embodiment of the present invention. If (a1) of FIG. 11 is the form of the first mask pattern (P1-1') according to the comparative example, and (a2) is the form of the first mask pattern P1-1 according to an embodiment of the present invention, then (a1 ) and (a2) will correspond to (b) and (c) of Figure 10, respectively. (b) of FIG. 11 is a schematic diagram in which the first mask patterns P1-1 and P1-1' of both forms are superimposed.
圖11的(a1)在需要以最大深度形成第一掩模圖案P1-1'時,由於在第一掩模圖案P1-1'還沒有來得及向側面形成充分寬度之前各向同性蝕刻向下部進行,從而存在形成孔SN的危險。如果中間形成穿孔SN並進行各向同性蝕刻,則會產生錐角急速變大的問題。而且,SN的尺寸變得過大,則在後續工藝即形成第二絕緣部M2且進行第二次蝕刻WE時,出現蝕刻對象不存在的情況,因此很難形成所需大小及形態的第二掩模圖案P2。此外,通過大孔SN流動的蝕刻液WE1-2'還會影響到模板50的臨時黏合部55和隔板絕緣部23。In (a1) of FIG. 11 , when it is necessary to form the first mask pattern P1-1' with the maximum depth, the isotropic etching is performed downward before the first mask pattern P1-1' has time to form a sufficient width on the side surface. , so there is a danger of forming holes SN. If the through hole SN is formed in the middle and isotropic etching is performed, a problem that the taper angle increases rapidly arises. Furthermore, if the size of SN becomes too large, when the second insulating portion M2 is formed in the subsequent process and the WE is etched for the second time, the etching object does not exist, so it is difficult to form the second mask of the required size and shape. Die pattern P2. In addition, the etching solution WE1 - 2 ′ flowing through the large hole SN also affects the
參照圖11的(a2)和(b),對於第一掩模圖案P1-1而言,由於蝕刻液進入的起點變為輔助絕緣部M4的左/右側兩處,因此進行各向同性蝕刻的半圓形態[參照圖10(c)的虛線)]的直徑將會變小。因此,第一掩模圖案P1-1向側面形成更大寬度的同時,可相對容易調整深度,從而能夠不形成孔SN或者只留下盡可能薄的厚度。Referring to (a2) and (b) of FIG. 11 , in the first mask pattern P1-1, since the starting point of the entry of the etchant becomes the left and right sides of the auxiliary insulating portion M4, the isotropic etching is performed. The diameter of the semicircular shape [refer to the dotted line in Fig. 10(c) )] will be reduced. Therefore, while the width of the first mask pattern P1 - 1 is formed toward the side surface, the depth can be adjusted relatively easily, so that the hole SN can be not formed or the thickness can be left as thin as possible.
參照圖11的(b)對比比較例和本發明的實施例,可發現本發明的蝕刻輪廓發生變化,第一掩模圖案P1-1的蝕刻更深且更寬。第一次蝕刻WE1後第一絕緣部M1圖案之間的垂直區域所對應的掩模金屬膜110的厚度t1、t2與比較例相比也會減少。因此,經第二次蝕刻WE2之後,能夠減少所述厚度t1、t2[step height;SH]所對應的台坎高度(掩模圖案下部兩側的掩模厚度)。隨著台坎高度的減少,會盡可能地縮減產生陰影效果的高度部分,並具有可容易地調整錐角的效果。Referring to (b) of FIG. 11 to compare the comparative example and the embodiment of the present invention, it can be found that the etching profile of the present invention is changed, and the etching of the first mask pattern P1-1 is deeper and wider. The thicknesses t1 and t2 of the
圖12是用於顯示比較例和根據本發明一實施例的掩模金屬膜的蝕刻形態的SEM照片。12 is a SEM photograph for showing the etching morphology of the mask metal film according to the comparative example and an embodiment of the present invention.
將圖12(a)的比較例與圖12(b)的本發明實施例進行比較,可發現本發明的第一掩模圖案P1更深且更寬。可發現,經第一濕蝕刻WE1後,第一掩模圖案P1的上部寬度為46.19μm,掩模金屬膜110厚度為15.22μm,第一掩模圖案P1的下部寬度以25μm為基準的台坎高度t1、t2為3.13μm、3.69μm。Comparing the comparative example of FIG. 12( a ) with the embodiment of the present invention of FIG. 12( b ), it can be found that the first mask pattern P1 of the present invention is deeper and wider. It can be found that after the first wet etching WE1, the width of the upper part of the first mask pattern P1 is 46.19 μm, the thickness of the
圖13是用於顯示比較例和根據本發明一實施例的掩模金屬膜110的殘殘留厚度、台坎高度t1、t2的曲線圖。比較例表示為1,本發明的實施例表示為2。FIG. 13 is a graph for showing the residual thickness, sill heights t1, t2 of the
可發現,比較例的台坎平均高度約為3.5μm,相反,本發明的台坎平均高度約為2.7μm,高度變低。對於殘殘留厚度而言,雖然比較例呈現出更薄,但是經確認這是由於比較例蝕刻到馬上形成孔SN的程度,從而比較例的厚度才比本發明更薄。It was found that the average height of the sills of the comparative example was about 3.5 μm, whereas the average height of the sills of the present invention was about 2.7 μm, and the height became lower. Regarding the residual thickness, although the comparative example appeared thinner, it was confirmed that the thickness of the comparative example was thinner than that of the present invention because the comparative example was etched to the extent that the hole SN was formed immediately.
圖14是用於顯示根據本發明一實施例的掩模金屬膜的殘留厚度、台坎高度(Step height)、第一絕緣部圖案間隔、輔助絕緣部圖案間隔的曲線圖。第一掩模圖案P1的厚度表示為depth,台坎高度表示為SH,第一絕緣部M1圖案間隔表示為outer,輔助絕緣部M4圖案間隔表示為inner。14 is a graph for showing the residual thickness of the mask metal film, the step height, the first insulating portion pattern interval, and the auxiliary insulating portion pattern interval according to an embodiment of the present invention. The thickness of the first mask pattern P1 is represented as depth, the height of the sill is represented as SH, the pattern interval of the first insulating portion M1 is represented as outer, and the pattern interval of the auxiliary insulating portion M4 is represented as inner.
參照圖14可發現,當第一絕緣部M1的圖案之間間隔約為26μm至34μm,輔助絕緣部M4的寬度為12μm至16μm時,台坎高度呈現出薄於4μm。台坎高度可對應在第一掩模圖案P1形成工藝之後,第一絕緣部M1圖案之間的垂直區域所對應的掩模金屬膜110的厚度t1、t2。Referring to FIG. 14 , it can be found that when the interval between the patterns of the first insulating portion M1 is about 26 μm to 34 μm, and the width of the auxiliary insulating portion M4 is 12 μm to 16 μm, the sill height is thinner than 4 μm. The height of the sill may correspond to the thicknesses t1 and t2 of the
圖14用四變形表示了第一掩模圖案P1以最大的厚度形成,使掩模金屬膜110殘留較薄厚度的最佳數值區間。當第一絕緣部M1的圖案間隔outer為26.5~30.5μm,輔助絕緣部M4的圖案間隔inner為14~16μm時,台坎高度SH呈現最低,可知這是該區間的最佳數值。FIG. 14 shows an optimal numerical range in which the first mask pattern P1 is formed with the maximum thickness and the
圖15是緊接圖11圖示製造掩模100的過程的示意圖。FIG. 15 is a schematic diagram illustrating a process of manufacturing the
參照圖15(a),在形成具有孔SN的第一掩模圖案P1之後,可在第一掩模圖案P1的側面形成第二絕緣部M2''[參照圖7的(f)]。接著,可在第一掩模圖案P1上進行濕蝕刻WE2。Referring to FIG. 15( a ), after forming the first mask pattern P1 having the holes SN, a second insulating portion M2 ″ may be formed on the side surface of the first mask pattern P1 [refer to FIG. 7( f )]. Next, wet etching WE2 may be performed on the first mask pattern P1.
輔助絕緣部M4可在第一掩模圖案P1形成後被去除。The auxiliary insulating portion M4 may be removed after the first mask pattern P1 is formed.
濕蝕刻液可浸透第一絕緣部M1圖案之間的空間及第一掩模圖案P1空間並進行濕蝕刻WE2。形成於第一掩模圖案P1內的絕緣部M2''通過遮擋蝕刻液來防止蝕刻液向第一掩模圖案P1的側面方向蝕刻,而是向第一掩模圖案P1的下部面方向蝕刻。The wet etching solution can penetrate the space between the patterns of the first insulating portion M1 and the space of the first mask pattern P1 to perform wet etching WE2. The insulating portion M2 ″ formed in the first mask pattern P1 shields the etchant to prevent the etchant from being etched toward the side surface of the first mask pattern P1 , but is etched toward the lower surface of the first mask pattern P1 .
參照圖15(b),第二掩模圖案P2能夠以貫通掩模金屬膜110的方式形成。即,第二掩模圖案P2能夠以從第一掩模圖案P1的下端貫通掩模金屬膜110的另一面的方式形成。Referring to FIG. 15( b ), the second mask pattern P2 can be formed so as to penetrate through the
此時,第二掩模圖案P2可以不同於圖7(g)、(h)中所述那樣,兩側面不形成凹陷的曲率。第一掩模圖案P1中可形成孔SN,或者因掩模金屬膜110下部具有隔板絕緣部23,第二掩模圖案P2具有如圖所示的形狀。At this time, the second mask pattern P2 may be different from that described in FIGS. 7( g ) and ( h ), and the curvature of the concave is not formed on both side surfaces. Holes SN may be formed in the first mask pattern P1, or the second mask pattern P2 may have a shape as shown in the figure because the lower part of the
第二掩模圖案P2如圖15(b)所示的理由說明如下。如果是孔SN已經形成的狀態,則SN周圍露出的掩模金屬膜110的局部厚度十分薄。此外,掩模金屬膜110的露出部分相比於未露出部分具有較小的曲率且更接近水平的形狀。由此,孔SN周圍部分以較薄的厚度進行蝕刻WE2'並被率先去除,隨著去除部分的側面露出,該側面可被進一步蝕刻。濕蝕刻各向同性地進行,且寬度方向(或者側面方向)的蝕刻速度大於朝下方向的蝕刻程度的特點[類似於圖5(d)的PD1->PD2]也能夠一起發揮作用。The reason why the second mask pattern P2 is shown in FIG. 15( b ) is explained below. If the hole SN is already formed, the partial thickness of the
作為其它樣態,第二絕緣部M2''並非一定對應於第一絕緣部M1的垂直下部位置,可沿著第一掩模圖案P1側面形成至更靠下的位置。在圖7(e)中進行曝光L時,因第一掩模圖案P1的深度,至少不能對通過第一絕緣部M1之間的間隔露出的第二絕緣部M2''的角部進行曝光。因該部分保留導致第二絕緣部M2''以更靠近下部地形成。此外,為了更準確地控制第二掩模圖案P2的尺寸,可通過針對性地進行曝光和顯影來形成第二絕緣部M2''。接著,可以對從沿著第一掩模圖案P1的側面在更靠下位置形成的第二絕緣部M2''間的間隔露出的掩模金屬膜110的局部進行蝕刻WE2。然後第二絕緣部M2''的垂直下部部分的掩模金屬膜110因進行各向同性地蝕刻可呈現底切形狀。由於第二絕緣部M2''與隔板絕緣部23的間隙小,因此相比於位於第二絕緣部M2''下部的掩模金屬膜110的上部或者中間部分,向下部流入更多蝕刻液。因此,位於第二絕緣部M2''下部的掩模金屬膜110的底切並不呈現凹狀曲率而是呈現具有凸狀曲率或者接近於直線的形態。As another aspect, the second insulating portion M2 ″ does not necessarily correspond to the vertical lower position of the first insulating portion M1 , and may be formed to a lower position along the side surface of the first mask pattern P1 . When exposure L is performed in FIG.7(e), at least the corner part of the 2nd insulating part M2" exposed through the space|interval between the 1st insulating parts M1 cannot be exposed because of the depth of the 1st mask pattern P1. The second insulating portion M2 ″ is formed closer to the lower portion due to the portion remaining. In addition, in order to control the size of the second mask pattern P2 more accurately, the second insulating portion M2 ″ may be formed through targeted exposure and development. Next, the part of the
當然,圖14(a)或者(b1)、(b2)的原理皆可適用。Of course, the principles of Fig. 14(a) or (b1) and (b2) are applicable.
圖16是根據本發明一實施例的掩模的示意圖。16 is a schematic diagram of a mask according to an embodiment of the present invention.
參照圖16,掩模圖案P包括上部的第一掩模圖案P1及下部的第二掩模圖案P2,且第一掩模圖案P1的厚度可大於第二掩模圖案P2的厚度。16 , the mask pattern P includes an upper first mask pattern P1 and a lower second mask pattern P2, and the thickness of the first mask pattern P1 may be greater than that of the second mask pattern P2.
第一掩模圖案P1進行各向同性蝕刻的結果,兩側面形成有凹狀曲率。第二掩模圖案P2的兩側面不具有凹狀曲率而是可呈現具有凸狀曲率或者接近於直線的形態。As a result of isotropic etching of the first mask pattern P1, concave curvatures are formed on both side surfaces. Both side surfaces of the second mask pattern P2 do not have concave curvature but may have a convex curvature or a shape close to a straight line.
當然,第一掩模圖案P1的上部寬度D1大於第二掩模圖案P2的下部寬度D2。此外,第一掩模圖案P1的下部寬度D3(或者第二掩模圖案P2的上部寬度D3)可小於第二掩模圖案P2的下部寬度D2。因此,掩模圖案P的側截面形狀可呈現類似於滴落在地面上的水珠狀。Of course, the upper width D1 of the first mask pattern P1 is larger than the lower width D2 of the second mask pattern P2. Also, the lower width D3 of the first mask pattern P1 (or the upper width D3 of the second mask pattern P2 ) may be smaller than the lower width D2 of the second mask pattern P2 . Therefore, the side cross-sectional shape of the mask pattern P may take a shape similar to that of water droplets dropped on the ground.
連接第一掩模圖案P1的上端角部至第一掩模圖案P1的下端角部的虛直線與掩模的下部面形成的角度ta可小於60°(超過0),優選可小於55°。由於第二掩模圖案P2的兩側面具有凸狀曲率,因此虛直線應佈置為接觸第一掩模圖案P1的下端角部而非第二掩模圖案P2的下端角部。由此,第一掩模圖案P1和第二掩模圖案P2的形狀之和即掩模圖案P的形狀整體上可呈現錐狀或者倒錐狀。The angle ta formed by the imaginary straight line connecting the upper corner of the first mask pattern P1 to the lower corner of the first mask pattern P1 and the lower surface of the mask may be less than 60° (over 0), preferably less than 55°. Since both side surfaces of the second mask pattern P2 have convex curvatures, the imaginary straight lines should be arranged to contact the lower end corner of the first mask pattern P1 instead of the lower end corner of the second mask pattern P2. Thereby, the shape of the mask pattern P, which is the sum of the shapes of the first mask pattern P1 and the second mask pattern P2, can be tapered or reverse tapered as a whole.
下面,對利用製造的掩模支撐模板50將掩模100黏合到框架200上的過程進行說明。Next, the process of adhering the
圖17是根據本發明一實施例的將模板50裝載在框架200上並將掩模100對應到框架200的單元區域CR的狀態的示意圖。圖12中列舉了將一個掩模100對應/附著在單元區域CR上的情況,但也可以將多個掩模100同時對應到所有的單元區域CR以使掩模100附著到框架200上。這種情況下,可具有用於分別支撐多個掩模100的多個模板50。17 is a schematic diagram of a state in which the
模板50可通過真空吸盤90移送。可以用真空吸盤90吸附黏合有掩模100的模板50的面的相反面並進行移送。真空吸盤90吸附模板50並進行翻轉之後,向框架200移送模板50的過程中仍不會影響掩模100的黏合狀態和對準狀態。
然後,參照圖17,可以將掩模100對應至框架200的一個掩模單元區域CR。通過將模板50裝載於框架200(或者掩模單元片材部220)上可實現掩模100與掩模單元區域CR的對應。控制模板50/真空吸盤90的位置的同時可通過顯微鏡觀察掩模100是否與掩模單元區域CR對應。由於模板50擠壓掩模100,因此掩模100與框架200可緊密地抵接。Then, referring to FIG. 17 , the
另外,框架200下部可以進一步佈置下部支撐體70。下部支撐體70可擠壓與掩模100接觸的掩模單元區域CR的相反面。與此同時,由於下部支撐體70和模板50向相互相反的方向擠壓掩模100的邊緣和框架200(或者掩模單元片材部220),因此能夠保持掩模100的對準狀態且不被打亂。In addition, the lower part of the
接下來,可以向掩模100照射雷射L並基於雷射焊接將掩模100附著到框架200上。被雷射焊接的掩模的焊接部部分會生成焊珠WB,焊珠WB可具有與掩模100/框架200相同的材料且與掩模100/框架200連接成一體。Next, the
圖18是根據本發明一實施例的將掩模100附著到框架200上之後使掩模100與模板50分離的過程的示意圖。18 is a schematic diagram of a process of separating the
參照圖18,將掩模100附著到框架200之後,可分離(debonding)掩模100與模板50。通過對臨時黏合部55進行加熱ET、化學處理CM、施加超聲波US、施加紫外線UV中的至少一個,可分離掩模100與模板50。由於掩模100保持附著在框架200的狀態,因此可以只抬起模板50。作為一示例,如果施加高於85℃-100℃的溫度的熱ET,則臨時黏合部55的黏性降低,掩模100與模板50的黏合力減弱,從而可分離掩模100與模板50。作為另一示例,通過利用將臨時黏合部55沉浸CM在IPA、丙酮、乙醇等化學物質中以使臨時黏合部55溶化、去除等的方式,可使掩模100與模板50分離。作為另一示例,通過施加超聲波US或者施加紫外線UV使掩模100與模板50的黏合力減弱,從而可分離掩模100與模板50。18, after the
圖19是根據本發明一實施例的將掩模100附著到框架200上並將絕緣部23去除的狀態的示意圖。圖19示出了將所有掩模100附著到框架200的單元區域CR的狀態。雖然可一一附著掩模100之後再分離模板50,但也可將所有掩模100附著之後再分離所有模板50。19 is a schematic diagram of a state in which the
模板50通過真空吸盤90從掩模100分離,掩模100上面將保留有隔板絕緣部23。如果隔板絕緣部23為固化光刻膠,則很難通過濕蝕刻工藝去除。因此,為了去除掩模100上的隔板絕緣部23,可施加等離子體PS、紫外線UV中的至少任意一個。可進行將框架一體型掩模100、200裝載到另外的腔室(未圖示)後通過施加大氣壓等離子體或者真空等離子體PS或者紫外線UV只去除隔板絕緣部23的工藝。The
如上,本發明能夠使第一掩模圖案P1以最大的深度形成的同時使台坎以最薄的厚度保留,因此具有在最終形成掩模圖案P時能夠更精密地控制尺寸和位置的效果。此外,通過使用包括掩模金屬膜110/隔板絕緣部23/臨時黏合部55/模板50的掩模支撐模板,具有可防止在濕蝕刻工藝中因蝕刻液的滲透/洩漏導致的誤差的效果。As described above, the present invention enables the first mask pattern P1 to be formed with the largest depth while leaving the sills with the thinnest thickness, so that the size and position of the mask pattern P can be controlled more precisely when the mask pattern P is finally formed. In addition, by using the mask support template including the
如上所述,本發明雖然參考附圖對優選實施例進行了說明,但是本發明不受所述實施例限制,在不超出本發明精神的情況下本發明所屬技術領域的普通技術人員可對其進行各種變形和變更。所述變形例和變更例應視為皆屬於本發明及附上的申請專利範圍的範圍。As described above, although the preferred embodiments of the present invention have been described with reference to the accompanying drawings, the present invention is not limited by the embodiments, and those of ordinary skill in the technical field to which the present invention pertains can refer to the embodiments without departing from the spirit of the present invention. Various deformations and changes are made. The modified examples and modified examples should be regarded as belonging to the scope of the present invention and the appended claims.
23:隔板絕緣部 25:絕緣部 50:模板 55:臨時黏合部 100:掩模 110:掩模金屬膜 200:框架 C:單元、掩模單元 CR:掩模單元區域 M1、M2、M3:第一、二、三絕緣部 M4:輔助絕緣部 P:掩模圖案 P1、P1-1、P1-2:第一掩模圖案 P2、P2-1、P2-2:第二掩模圖案 SN:孔 t1、t2: 厚度 WE1、WE2、WE3:濕蝕刻23: Partition insulation part 25: Insulation part 50: Template 55: Temporary bonding part 100: Mask 110: Mask metal film 200: Frame C: unit, mask unit CR: Mask Cell Region M1, M2, M3: The first, second, and third insulating parts M4: Auxiliary insulation P: mask pattern P1, P1-1, P1-2: first mask pattern P2, P2-1, P2-2: Second mask pattern SN: hole t1, t2: thickness WE1, WE2, WE3: Wet etching
圖1是現有的將掩模附著到框架的過程的示意圖。 圖2是根據本發明一實施例的框架一體型掩模的主視圖及側截面圖。 圖3是根據本發明一實施例的掩模的示意圖。 圖4是根據本發明一實施例的通過在模板上黏合掩模金屬膜來形成掩模以製造掩模支撐模板的過程的示意圖。 圖5是根據現有的掩模製造過程和比較例的掩模的蝕刻程度的示意圖。 圖6至圖7是根據本發明一實施例的掩模的製造過程的示意圖。 圖8是根據本發明一實施例的掩模金屬膜的蝕刻程度的示意圖。 圖9是根據本發明一實施例的掩模支撐模板的製造過程的示意圖。 圖10是根據比較例和本發明一實施例的掩模金屬膜的蝕刻形態的示意圖。 圖11是對比比較例和根據本發明一實施例的掩模金屬膜的蝕刻形態的示意圖。 圖12是用於顯示比較例和根據本發明一實施例的掩模金屬膜的蝕刻形態的SEM照片。 圖13是用於顯示比較例和根據本發明一實施例的掩模金屬膜的殘留殘留厚度、台坎高度(Step height)的曲線圖。 圖14是用於顯示根據本發明一實施例的掩模金屬膜的殘留厚度、台坎高度、第一絕緣部圖案間隔、輔助絕緣部圖案間隔的曲線圖。 圖15是用於顯示繼圖11之後製造掩模的過程的示意圖。 圖16是用於顯示根據本發明一實施例的掩模的示意圖。 圖17是根據本發明一實施例的將模板裝載於框架上以使掩模對應到框架的單元區域的狀態的示意圖。 圖18是根據本發明的一實施例的將掩模附著到框架上之後使掩模和模板分離的過程的示意圖。 圖19是根據本發明一實施例的將掩模附著到框架的單元區域並去除絕緣部的狀態的示意圖。FIG. 1 is a schematic diagram of the existing process of attaching a mask to a frame. 2 is a front view and a side cross-sectional view of a frame-integrated mask according to an embodiment of the present invention. 3 is a schematic diagram of a mask according to an embodiment of the present invention. 4 is a schematic diagram of a process of forming a mask by adhering a mask metal film on a template to fabricate a mask support template according to an embodiment of the present invention. FIG. 5 is a schematic diagram of the etching degree of the mask according to the existing mask manufacturing process and the comparative example. 6 to 7 are schematic diagrams of a manufacturing process of a mask according to an embodiment of the present invention. FIG. 8 is a schematic diagram illustrating the etching degree of the mask metal film according to an embodiment of the present invention. 9 is a schematic diagram of a manufacturing process of a mask support template according to an embodiment of the present invention. FIG. 10 is a schematic diagram of etching patterns of a mask metal film according to a comparative example and an embodiment of the present invention. FIG. 11 is a schematic diagram comparing etching patterns of a mask metal film according to a comparative example and an embodiment of the present invention. 12 is a SEM photograph for showing the etching morphology of the mask metal film according to the comparative example and an embodiment of the present invention. FIG. 13 is a graph for showing the residual residual thickness and the step height of the mask metal film according to the comparative example and an embodiment of the present invention. 14 is a graph for showing the residual thickness of the mask metal film, the sill height, the first insulating portion pattern spacing, and the auxiliary insulating portion pattern spacing according to an embodiment of the present invention. FIG. 15 is a schematic diagram for showing a process of manufacturing a mask subsequent to FIG. 11 . FIG. 16 is a schematic diagram for showing a mask according to an embodiment of the present invention. 17 is a schematic diagram of a state in which a template is loaded on a frame so that a mask corresponds to a unit area of the frame according to an embodiment of the present invention. 18 is a schematic diagram of the process of separating the mask and template after attaching the mask to the frame, according to an embodiment of the present invention. 19 is a schematic diagram of a state in which a mask is attached to a cell region of a frame and an insulating portion is removed, according to an embodiment of the present invention.
23:隔板絕緣部23: Partition insulation part
50:模板50: Template
55:臨時黏合部55: Temporary bonding part
110:掩模金屬膜110: Mask metal film
M1:第一絕緣部M1: First insulating part
M4:輔助絕緣部M4: Auxiliary insulation
P1-1、P1-1':第一掩模圖案P1-1, P1-1': the first mask pattern
t1、t2:厚度t1, t2: thickness
Claims (11)
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KR20200063603 | 2020-05-27 | ||
KR10-2020-0063603 | 2020-05-27 | ||
KR10-2020-0069192 | 2020-06-08 | ||
KR1020200069192A KR102377777B1 (en) | 2020-05-27 | 2020-06-08 | Producing method of mask and producing method of template for supporting mask and producing method of mask integrated frame |
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TW202147666A true TW202147666A (en) | 2021-12-16 |
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KR102090198B1 (en) * | 2013-03-29 | 2020-03-18 | 삼성디스플레이 주식회사 | Fine Metal Mask and method of manufacturing the same |
CN104532183B (en) * | 2015-01-26 | 2017-09-26 | 深圳市华星光电技术有限公司 | The preparation method of high-precision mask plate |
CN106381464A (en) * | 2015-07-28 | 2017-02-08 | 昆山国显光电有限公司 | General metal mask plate and manufacturing method thereof |
KR20180046970A (en) * | 2016-10-28 | 2018-05-10 | 삼성디스플레이 주식회사 | Mask assmbly and the manufacturing the same |
KR101986525B1 (en) * | 2018-08-29 | 2019-06-07 | 주식회사 티지오테크 | Producing method of mask |
KR102236538B1 (en) * | 2018-10-10 | 2021-04-06 | 주식회사 오럼머티리얼 | Producing method of mask and producing method of mask integrated frame |
KR102236541B1 (en) * | 2018-10-22 | 2021-04-07 | 주식회사 오럼머티리얼 | Producing method of mask, producing method of template for supporting mask and producing method of mask integrated frame |
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CN113737127B (en) | 2024-03-08 |
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