KR20230107079A - Mask integrated frame and producing method thereof - Google Patents

Abstract

The present invention relates to a frame integrated mask and a manufacturing method thereof. The frame integrated mask according to the present invention, as the frame integrated mask used in a process of forming an OLED pixel on a semiconductor wafer, comprises: a frame wherein a hollow area is formed; a grid sheet part connected on the frame, having an edge with a circular shape, and comprising a grid part disposed on at least the hollow area of the frame; and a mask connected on the grid sheet part, having the circular shape, and comprising a mask pattern. Therefore, the present invention is capable of having an effect of realizing ultra-high definition pixels of a micro display.

Description

Frame integrated mask and its manufacturing method {MASK INTEGRATED FRAME AND PRODUCING METHOD THEREOF}

The present invention relates to a frame-integrated mask and a manufacturing method thereof. More specifically, it relates to a frame-integrated mask that can be used when forming pixels on a semiconductor wafer and can precisely form an ultra-high resolution mask pattern, and a manufacturing method thereof.

As a technology for forming pixels in the OLED manufacturing process, the FMM (Fine Metal Mask) method, which deposits organic materials on a desired location by attaching a thin metal shadow mask to the substrate, is mainly used.

In the existing OLED manufacturing process, after manufacturing a mask thin film, the mask is welded and fixed to the OLED pixel deposition frame for use, but there was a problem that the large area mask was not well aligned during the fixing process. In addition, in the process of welding fixing to the frame, the thickness of the mask film is too thin and the mask has a large area, so there is a problem that the mask is sagging or twisted by a load.

In the ultra-high-definition OLED manufacturing process, even a fine alignment error of 1 μm or less can lead to pixel deposition failure, so it is necessary to develop technologies that can prevent distortion such as sagging or twisting of the mask and clear alignment. The situation is.

Meanwhile, recently, a micro display applied to a virtual reality (VR) device is attracting attention. In order to display an image right in front of a user's eyes in a VR device, the micro display must have a smaller screen size than existing displays and implement high definition within a small screen. Therefore, a mask pattern smaller in size than a mask used in a conventional ultra-high-definition OLED manufacturing process and finer alignment of the mask before a pixel deposition process are required.

Accordingly, the present invention has been devised to solve the various problems of the prior art as described above, and an object of the present invention is to provide a frame-integrated mask capable of implementing ultra-high-definition pixels of a micro display and a method for manufacturing the same. .

In addition, an object of the present invention is to provide a frame-integrated mask and a manufacturing method thereof capable of improving the stability of pixel deposition by clearly aligning the mask.

However, these tasks are illustrative, and the scope of the present invention is not limited thereby.

The above object of the present invention is a frame-integrated mask used in a process of forming an OLED pixel on a semiconductor wafer, comprising: a frame in which a hollow region is formed; a grid sheet portion connected to the frame, having a circular edge, and including a grid portion disposed on at least a hollow region of the frame; It is achieved by a frame-integrated mask including; a mask connected to the grid sheet portion, having a circular shape, and including a mask pattern.

The grid sheet part may include an edge part connected to the frame; a plurality of first grid parts extending in a first direction and having both ends connected to the edge part; It may include a plurality of second grid parts extending in a second direction perpendicular to the first direction, crossing the first grid part, and having both ends connected to the edge part.

A first welding portion may be formed on at least a portion of the edge portion to attach the grid sheet portion and the frame.

The mask may include a dummy part connected to the grid sheet part; a plurality of cell parts disposed at a center of the mask rather than the dummy part and including a plurality of mask patterns; It may include a partition part disposed in the center of the mask rather than the dummy part and disposed between the plurality of cell parts.

A second welding portion may be formed on at least a portion of the dummy portion to attach the mask to the grid sheet portion.

The first grid part and the second grid part may be disposed below the dividing part.

A third welding portion may be formed on at least a portion of the first grid portion and the second grid portion to attach the first grid portion, the second grid portion, and the dividing portion.

The third welding portion is formed to protrude in a direction opposite to a surface where at least the first grid portion and the second grid portion and the dividing portion are in contact, and the first grid portion and the second grid portion on which the third welding portion is formed are formed. Welding grooves may be formed in the grid portion from the direction of the opposite surface.

The thickness of the mask may be 2 μm to 12 μm, and the thickness of the grid sheet portion may be 20 μm to 50 μm.

The mask pattern may include an upper first mask pattern and a lower second mask pattern, and the thickness of the first mask pattern may be greater than that of the second mask pattern.

Both side surfaces of the first mask pattern and the second mask pattern may be formed to have curvature.

The resolution of the mask pattern may be higher than at least 2,000 pixels per inch (PPI).

A specific first grid part and a second grid part among the first grid part and the second grid part may be formed to have a wider width than the other first grid part and second grid part.

And, the above object of the present invention is a method for manufacturing a frame-integrated mask used in a process of forming an OLED pixel on a semiconductor wafer, (a) a grid sheet having a circular edge on a frame in which a hollow region is formed. connecting the parts, wherein the grid sheet part includes at least a grid part disposed on the hollow region of the frame; (b) connecting a mask having a circular shape and including a mask pattern on the grid sheet portion;

The grid sheet part may include an edge part connected to the frame; a plurality of first grid parts extending in a first direction and having both ends connected to the edge part; It may include a plurality of second grid parts extending in a second direction perpendicular to the first direction, crossing the first grid part, and having both ends connected to the edge part.

The step (a) may include: (a1) loading the first template to which the grid sheet portion is adhered onto the frame and bringing the grid sheet portion into contact with the frame; (a2) attaching the grid sheet to the frame by irradiating a laser beam on at least a portion of a contact area between the grid sheet and the frame;

In the step (a1), the first template to which the grid sheet portion is adhered may include: (1) adhering a grid metal film onto the first template having a temporary adhesive portion formed on one surface; (2) forming the grid part by etching the grid metal film;

The mask may include a dummy part connected to the grid sheet part; a plurality of cell parts disposed at a center of the mask rather than the dummy part and including a plurality of mask patterns; It may include a partition part disposed in the center of the mask rather than the dummy part and disposed between the plurality of cell parts.

The step (b) may include: (b1) loading the second template to which the mask is attached onto the grid sheet portion and bringing the mask into contact with the grid sheet portion; (b2) attaching the mask to the grid sheet portion by irradiating a laser beam on at least a portion of a region where the mask and the grid sheet portion are in contact.

In the step (b1), the second template to which the mask is attached may be prepared by: (1) attaching a mask metal film onto the second template having a temporary adhesive portion formed on one surface; (2) forming a plurality of mask patterns by etching the mask metal film;

A step of attaching at least a portion of the grid unit and the partition unit by irradiating a laser on a surface opposite to a surface where the grid unit and the partition unit contact each other may be further performed.

In step (2), welding grooves are further formed on the grid part, a surface opposite to the surface on which the welding grooves are formed is brought into contact with the mask, and laser is irradiated from the surface on which the welding grooves are formed to the grid part. A step of attaching at least a part of the part and the mask may be further performed.

According to the present invention configured as described above, there is an effect of implementing ultra-high-definition pixels of a micro display.

In addition, according to the present invention, there is an effect of improving the stability of pixel deposition by clearly aligning the mask.

Of course, the scope of the present invention is not limited by these effects.

1 is a schematic diagram showing a frame-integrated mask according to an embodiment of the present invention.
2 is an AA′ schematic side cross-sectional view of FIG. 1 .
3 is a schematic plan view and a schematic cross-sectional side view of BB′ showing a connection form of a grid sheet portion and a frame according to an embodiment of the present invention.
4 is a schematic plan view and a schematic side cross-sectional view of EE' showing a mask according to an embodiment of the present invention.
5 to 8 are schematic diagrams illustrating a process of manufacturing a first template supported by a grid sheet portion by attaching a grid metal film to a first template and forming a grid sheet portion according to an embodiment of the present invention.
9 to 10 are schematic views illustrating a process of connecting the grid sheet to the frame by loading the first template supported by the grid sheet on the frame according to an embodiment of the present invention.
11 to 13 are schematic diagrams illustrating a process of manufacturing a second template supported by a mask by attaching a mask metal film to the second template and forming a mask pattern according to an embodiment of the present invention.
14 to 16 are schematic diagrams illustrating a process of manufacturing a mask by forming a mask pattern on a mask metal film according to an embodiment of the present invention.
17 is a schematic diagram illustrating a process of manufacturing a mask by forming a mask pattern on a mask metal film according to another embodiment of the present invention.
18 to 19 are schematic diagrams illustrating a process of connecting a mask to a grid sheet by loading a second template with a mask supported on a grid sheet according to an embodiment of the present invention.
20 is a schematic diagram illustrating a connection form of a mask and a grid sheet part according to various embodiments of the present invention.
21 is a schematic diagram showing an OLED pixel deposition apparatus to which a frame-integrated mask is applied according to an embodiment of the present invention.
22 is a schematic plan view and a schematic side cross-sectional view of BB′ showing a connection form of a grid sheet portion and a frame according to another embodiment of the present invention.
23 is a schematic plan view and a schematic side cross-sectional view of EE' showing a mask according to another embodiment of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The detailed description of the present invention which follows refers to the accompanying drawings which illustrate, by way of illustration, specific embodiments in which the present invention may be practiced. These embodiments are described in sufficient detail to enable one skilled in the art to practice the present invention. It should be understood that the various embodiments of the present invention are different from each other but are not necessarily mutually exclusive. For example, specific shapes, structures, and characteristics described herein may be implemented in one embodiment in another embodiment without departing from the spirit and scope of the invention. Additionally, it should be understood that the location or arrangement of individual components within each disclosed embodiment may be changed without departing from the spirit and scope of the invention. Accordingly, the detailed description set forth below is not to be taken in a limiting sense, and the scope of the present invention, if properly described, is limited only by the appended claims, along with all equivalents as claimed by those claims. Similar reference numerals in the drawings indicate the same or similar functions in various aspects, and the length, area, thickness, and the like may be exaggerated for convenience.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily practice the present invention.

1 is a schematic diagram showing a frame-integrated mask 10 according to an embodiment of the present invention. 2 is a schematic side cross-sectional view taken along line A-A' of FIG. 1; 3 is a schematic plan view and a BB' schematic side cross-sectional view showing a connection form between the grid sheet portion 30 and the frame 40 according to an embodiment of the present invention. 4 is a schematic plan view and E-E' schematic side cross-sectional view showing a mask 20 according to an embodiment of the present invention.

Recently, a micro display applied to VR (virtual reality) devices is capable of performing a pixel deposition process on a target substrate 900 (see FIG. 21) such as a semiconductor wafer or a silicon wafer, rather than a large-area substrate. can Since the screen of the micro display is located right in front of the user's eyes, it has a small screen of about 1 to 2 inches rather than a large area. In addition to this, since it is located close to the user's eyes, it is necessary to implement a higher resolution.

Therefore, the present invention proceeds the pixel formation process on a 200mm, 300mm, and 450mm semiconductor wafer target substrate 900 rather than using it in the pixel formation process for a large-area target substrate with a side length exceeding 1,000m. It is an object of the present invention to provide a method of manufacturing a frame-integrated mask 10 capable of forming pixels with high image quality and a frame-integrated mask 10.

For example, in the case of the current QHD picture quality, the pixel size reaches about 30 ~ 50㎛ with 500 ~ 600 PPI (pixel per inch), and in the case of 4K UHD and 8K UHD high-definition, ~860 PPI and ~1600 PPI are higher than this. resolution, etc. A micro-display applied directly to a VR device or a micro-display used by being inserted into a VR device aims for ultra-high resolution of about 2,000 PPI or higher, and the pixel size reaches about 5 to 10 μm. In the case of semiconductor wafers and silicon wafers, they can be used as substrates for high-resolution micro-displays because finer and more precise processes are possible compared to glass substrates by utilizing technologies developed in semiconductor processing. The present invention is characterized in that it is a frame-integrated mask 10 capable of forming pixels on such a semiconductor wafer.

1 and 2, in the present invention, a mask 20 corresponds to a semiconductor wafer (or a silicon wafer) in order to perform a pixel deposition process using a semiconductor wafer as a target substrate 900 (see FIG. 21). It is characterized in that it has a shape to. The meaning that the shape of the mask 20 corresponds to the semiconductor wafer means that the mask 20 has the same size and shape as the semiconductor wafer, or has a different size and shape from the semiconductor wafer, but is at least coaxial and the mask pattern P is It should be noted that it includes even a state disposed within the shape of a semiconductor wafer. In addition, the mask 20 having a shape corresponding to the semiconductor wafer is integrally connected to the frame 30 to clarify mask alignment.

The frame-integrated mask 10 may include a mask 20 , a grid sheet portion 30 and a frame 40 . The grid sheet portion 30 may be attached to a portion of the surface of the frame 40 . In addition, the mask 20 may be attached to a portion of the surface of the grid sheet portion 30 . That is, the grid sheet portion 30 may be attached to the frame 40 and the mask 20 may be attached to the grid sheet portion 30 .

Referring to FIGS. 1, 2, and 4 , the mask 20 may include a cell portion C, a partition portion SR, and a dummy portion DM. Of the mask 20, a portion of the mask 20 that is not in contact with the grid sheet portion 30 and on which the mask pattern P is formed is a cell portion C, and a portion disposed between the cell portions C is a partition portion SR, and the grid sheet portion 30 ) is indicated as a dummy part DM. Although the cell part C, the partition part SR, and the circular dummy part DM have different names and codes depending on where they are formed, the cell part C, the partition part SR, and the dummy part DM are separated areas. It is not, it is a configuration that has the same material and is connected integrally. In other words, the cell portion C, the partition portion SR, and the circular dummy portion DM are each part of the mask 20 formed simultaneously in a process such as rolling or electroforming. In the following description, the cell part C, the partition part SR, and the dummy part DM may be used interchangeably with the mask 20 .

The mask 20 is preferably made of invar or super invar material, and may have a circular shape to correspond to a circular semiconductor wafer. The mask 20 may have a size corresponding to or larger than a semiconductor wafer, such as 200 mm, 300 mm, or 450 mm.

A conventional mask has a shape such as a square or a polygon to correspond to a large-area substrate. In addition, the frame also has a shape such as a square or a polygon to correspond to the mask, and since the mask includes angled corners, a problem in which stress is concentrated at the corners may occur. When stress is concentrated, a different force is applied to only a portion of the mask, and thus the mask may be twisted or distorted, which may lead to pixel alignment failure. In particular, in the ultra-high resolution of 2,000 PPI or higher, it is necessary to avoid concentrating stress on the edge of the mask.

Therefore, as the mask 20 of the present invention has a circular shape, it is characterized in that it does not include corners. That is, the dummy part DM of the mask 20 may have a circular shape and may not include corners. Since there are no corners, it is possible to solve the problem that different forces act on a specific part of the mask 20, and the stress can be uniformly distributed along the circular edge. Accordingly, the mask 20 is not twisted or distorted, can contribute to clear pixel alignment, and has an advantage of being able to implement a mask pattern P of 2,000 PPI or more. According to the present invention, a pixel deposition process is performed by matching a circular semiconductor wafer (or silicon wafer) having a low coefficient of thermal expansion with a circular mask 20 in which stress is uniformly distributed along the edge, and thus about 5 to 10 μm is formed. It becomes possible to deposit pixels up to a certain degree.

A plurality of mask patterns P may be formed in the cell portion C. The mask pattern P is a plurality of pixel patterns P corresponding to R, G, and B. The mask patterns P may have slanted sides, a taper shape, or a shape in which the pattern width increases from top to bottom. Numerous mask patterns P may form a cluster to form one display cell portion C. The display cell portion C has a diagonal length of about 1 to 2 inches, and is an area corresponding to one display. Alternatively, the display cell portion C may be an area corresponding to a plurality of displays.

The mask pattern P may have a substantially tapered shape, and may have a pattern width of several to several tens of μm, preferably about 5 to 10 μm (resolution of 2,000 PPI or more). The mask pattern P may be formed through PR patterning, laser processing, or the like, but is not limited thereto.

The mask 20 may include a plurality of cell parts C. The plurality of cell units C may be arranged at predetermined intervals in a first direction (x-axis direction) and in a second direction (y-axis direction) perpendicular to the first direction. In FIG. 1 , it is shown that 21 cell parts C are disposed along the first and second directions, but it is not limited thereto. A partitioning unit SR may be disposed between the cell units C. The cell part C and the partition part SR may be disposed at positions corresponding to the hollow region R of the frame 40 . The cell portion C and the partition portion SR are portions of the mask 20 that are disposed in the center of the dummy portion DM.

The dummy part DM may define the outer shape of the mask 20 with a circular edge or a shape corresponding to the semiconductor wafer. At least a part of the dummy part DM may be connected to the grid sheet part 30 . Specifically, at least a portion of the dummy portion DM may be attached and connected to at least a portion of the edge portion 31 of the grid sheet portion 30 . As the second welding part WB2 is formed between the dummy part DM and the edge part 31, they may be attached to each other. To attach the mask 20 close to the inner circumference of the edge portion 31 of the grid sheet portion 30, the second welding portion WB2 is formed on the inner side toward the center of the mask 20 than the first welding portion WB1. it is desirable to be

Referring to FIGS. 1 to 3 , the grid sheet portion 30 may include an edge portion 31 , a plurality of first grid portions 33 , and a plurality of second grid portions 35 . Although the border portion 31 and the first and second grid portions 33 and 35 have different names and codes, the border portion 31 and the first and second grid portions 33 and 35 are not separate areas, It is a composition that has the same material and is connected integrally. In other words, the edge portion 31 and the first and second grid portions 33 and 35 are each part of the grid sheet portion 30 formed simultaneously in a process such as rolling and electroforming. In the following description, the edge portion 31 and the first and second grid portions 33 and 35 may be used interchangeably with the grid sheet portion 30 .

The grid sheet portion 30 is preferably made of invar or super invar, and the edge portion 31 may have a circular shape to correspond to a circular semiconductor wafer. The grid sheet portion 30 may have the same shape as or at least a larger shape than the mask 20 so that the mask 20 can be connected to the upper portion.

The edge portion 31 may define the outer shape of the grid sheet portion 30 in a shape corresponding to the mask 20 . The rim portion 31 may have a circular ring shape. At least a portion of the edge portion 31 may be connected to the frame 40 . As the first welded portion WB1 is formed between the edge portion 31 and the frame 40, they may be mutually attached.

The plurality of first grid parts 33 may extend in the first direction and have both ends connected to the edge part 31 . Also, the plurality of second grid parts 35 may extend in a second direction perpendicular to the first direction, intersect the first grid part 33 , and have both ends connected to the edge part 31 . The first grid parts 33 are spaced apart from each other and arranged in parallel, and the second grid parts 35 are spaced apart from each other and arranged in parallel. In addition, since the first and second grid parts 33 and 35 intersect each other on the hollow region R of the frame 40, empty spaces CR may appear in the form of a matrix at the crossed regions. This empty space CR is a space where the cell portion C of the mask 20 is disposed, and is referred to as a cell region CR (see FIG. 3 ).

The mask 20 may be connected to the grid sheet portion 30 through the second welding portion WB2 . The edge portion 31 of the grid sheet portion 30 is in contact with the dummy portion DM of the mask 20, and the first and second grid portions 33 and 35 of the grid sheet portion 30 are in contact with the mask 20. It can contact the partition (SR) of the. That is, the first and second grid parts 33 and 35 may be disposed below the dividing part SR.

Since the grid sheet portion 30 also has a circular edge like the mask 20 and does not include corners, it is possible to solve the problem of different forces acting on a specific portion of the grid sheet portion 30 . Also, the stress may be uniformly distributed along the circular edge. Accordingly, it may contribute to preventing the grid sheet portion 30 from being twisted or distorted. Since the circular mask 20 is connected to the circular grid sheet portion 30, the stress can be doubled. In addition, the first and second grid parts 33 and 35 of the grid sheet part 30 are disposed under the partition part SR of the mask 20, and as the mask 20 supports the whole, the mask has a very thin thickness. (20) prevents sagging from occurring in the cell portion C and the partition portion SR. As a result, the mask 20 and the grid sheet portion 30 can contribute to clear pixel alignment without being distorted, and have an effect of realizing a high resolution of 2,000 PPI or more.

Meanwhile, the grid sheet portion 30 and the mask 20 may be further connected through a third welding portion WB3 in addition to being connected through the second welding portion WB2 . The edge portion 31 of the grid sheet portion 30 is closely attached to the dummy portion DM of the mask 20 through the second welding portion WB2, but the first and second inner portions of the grid sheet portion 30 are closely attached. Lifting may occur between the grid parts 33 and 35 and the dividing part SR. Accordingly, the third welding part WB3 may be formed on at least a part of the first and second grid parts 33 and 35 and the dividing part SR so that they may be closely attached. In order to prevent the position of the mask pattern P from being changed due to the stress applied to the surrounding elements as the third welding part WB3 is formed, that is, the welding bead is formed, the third welding part WB3 is formed in the cell part C. It may be formed at the intersection of the first and second grid parts 33 and 35, which are located relatively far from the mask pattern P. However, it is not necessarily limited thereto, and the third welding portion WB3 may be formed on the first and second grid portions 33 and 35 .

A hollow region R having an open center may be formed in the frame portion 40 . It is preferable that the hollow region R has a shape corresponding to the edge portion 31 of the grid sheet portion 30 so that the grid sheet portion 30 can be tightly supported without sagging or twisted. Accordingly, the hollow region R may have a circular shape.

Meanwhile, although FIG. 1 shows an embodiment in which a circular hollow region R is formed in a rectangular frame portion 40 as a whole, the frame portion 40 has a circular hollow region R on the first frame portion. The formed ring-shaped second frame portion may be connected to each other. If the first frame part has a shape that is integrally connected at the lower part of the second frame part, various shapes are formed within the range of an empty center to provide a hollow region R such as a circular plate, a rectangular plate, a circular ring shape, or a rectangular ring shape. can have And, the grid sheet part 30 may be connected to the ring-shaped second frame part.

A width of the edge portion 31 attached to the frame portion 40 may be constant along the outer circumferential direction of the grid sheet portion 30 . That is, the area attached to the frame portion 40 may be constant at all portions along the outer circumferential direction of the circular edge portion 31 . In addition, along the outer circumferential direction of the mask 20 , the width of the dummy portion DM attached to the grid sheet portion 30 may be constant. That is, the area attached to the edge portion 31 may be constant at all portions along the outer circumferential direction of the circular dummy portion DM. Since the area attached along the outer circumferential direction is constant, the stress of the mask 20 and the grid sheet portion 30 is uniformly distributed, and the mask 20 and the grid sheet portion 30 are formed in a circular shape. Accordingly, the effect of uniformly distributing stress can be further improved.

The thickness of the frame part 40 may be thicker than the thickness of the grid sheet part 30 . Since the frame portion 40 is responsible for the overall rigidity of the frame-integrated mask 10, it may be formed to a thickness of several mm to several cm.

In the case of the grid sheet portion 30, the process of manufacturing a substantially thick sheet is difficult, and if it is too thick, it becomes difficult to form the cell region CR by etching, and the organic material source 600 [also in the OLED pixel deposition process] 21] may cause a shadow effect that blocks a path passing through the mask 20 . Conversely, if the thickness is too thin, it may be difficult to secure enough rigidity to support the mask 20 . Accordingly, the grid sheet portion 30 is preferably thinner than the thickness of the frame portion 40 but thicker than the mask 20 . The grid sheet portion 30 may have a thickness of about 20 μm to about 50 μm.

In order to realize a resolution of the mask pattern P higher than 2,000 pixels per inch (PPI), the mask 20 may have a thickness of about 2 μm to about 12 μm. If the thickness of the mask 20 is thicker than this, it may be difficult to form the width or spacing of the mask patterns P having a generally tapered shape to meet the resolution.

5 to 8 show a grid metal film 30' attached to a first template 50 according to an embodiment of the present invention and a grid sheet portion 30 formed so that the grid sheet portion 30 is supported. It is a schematic diagram showing a process of manufacturing the first template 50.

Referring to FIG. 5 , a first template 50 may be prepared. The first template 50 is a medium in which the grid metal film 30' or the grid sheet portion 30 can be attached to one surface and moved in a supported state. The size of the first template 50 is a flat plate having the same area or larger than that of the grid metal film 30' or the grid sheet part 30 so that the grid metal film 30' or the grid sheet part 30 can be supported as a whole. It may have a shape, preferably a circular shape corresponding to the shape of the grid metal film 30' or the grid sheet portion 30.

The first template 50 is made of a material such as wafer, glass, silica, heat-resistant glass, quartz, alumina (Al ₂ O ₃ ), borosilicate glass, or zirconia. can be used

A laser pass-through hole 51 is formed in the first template 50 so that the laser L irradiated from the top of the first template 50 can reach a part of the edge portion 31 of the grid sheet portion 30. It can be. The laser passage holes 51 may be formed in the first template 50 to correspond to the positions and numbers of the first welded parts WB1 to be formed between the grid sheet part 30 and the frame 40 . Since the first welded portions WB1 may be spaced apart from each other in a circular direction along the edge portion 31, the laser pass-through holes 51 are also spaced apart from each other in a circular direction around the edge of the first template 50 to correspond thereto. can be formed so that

A temporary adhesive portion 55 may be formed on one surface of the first template 50 . The temporary adhesive portion 55 is supported on the first template 50 by temporarily adhering the grid sheet portion 30 to one surface of the first template 50 until the grid sheet portion 30 is attached to the frame 40. can be made

The temporary adhesive portion 55 may use an adhesive or adhesive sheet that can be separated by application of heat or an adhesive or adhesive sheet that can be separated by UV irradiation.

For example, the temporary adhesive part 55 may use liquid wax. The liquid wax may be the same as the wax used in the polishing step of a semiconductor wafer, etc., and the type is not particularly limited. The liquid wax is a resin component mainly for controlling adhesion, impact resistance, and the like for holding power, and may include substances and solvents such as acrylic, vinyl acetate, nylon, and various polymers. For example, the temporary adhesive portion 55 may use SKYLIQUID ABR-4016 containing acrylonitrile butadiene rubber (ABR) as a resin component and n-propyl alcohol as a solvent component. Liquid wax may be formed on the temporary adhesive portion 55 using spin coating.

The temporary adhesive portion 55, which is liquid wax, has lower viscosity at a temperature higher than 85°C to 100°C, increases viscosity at a temperature lower than 85°C, and may be partially hardened like a solid, so that the grid sheet portion 30 and the first template ( 50) can be fixedly bonded.

As another example, the temporary adhesive portion 55 may use a thermal release tape. The thermal release tape may have a core film such as a PET film in the center, a thermal release adhesive on both sides of the core film, and a release film/release film on the outside of the adhesive layer. can Here, the adhesive layers disposed on both sides of the core film may have different peeling temperatures.

Next, referring to FIG. 6 , a grid metal film 30 ′ may be attached to the first template 50 . After heating the liquid wax to 85°C or higher and bringing the grid metal film 30' into contact with the first template 50, adhesion is achieved by passing the grid metal film 30' and the first template 50 between rollers. can be done

The grid metal film 30' may be formed by performing a surface defect removal process and a thickness reduction process on one or both surfaces. As shown in FIG. 6 , a surface defect removal process and a thickness reduction process may be performed after the grid metal film 30 ′ is attached to the first template 50 . The thickness of the grid metal layer 30 ′ may be reduced to about 20 μm to about 50 μm through the surface defect removal process and the thickness reduction process. Of course, the grid metal film 30 ′ whose thickness has already been reduced may be attached to the first template 50 .

Next, referring to FIG. 7 , a patterned insulating portion MA may be formed on the grid metal layer 30 ′. The insulating portion MA may be formed of a photoresist material using a printing method or the like.

Subsequently, etching (EC) of the grid metal layer 30' may be performed. Methods such as dry etching and wet etching may be used without limitation, and as a result of the etching, portions of the grid metal layer 30 ′ exposed to empty spaces between the insulating parts MA may be etched (EC). The etched portion of the grid metal film 30' has a size corresponding to a micro display of about 1 to 2 inches, and this portion may be provided as a cell region CR. After etching (EC), the grid metal layer 30' may become a grid sheet portion 30 in which an edge portion 31 and first and second grid portions 33 and 35 are formed.

Next, referring to FIG. 8 , manufacturing of the first template 50 supporting the grid sheet portion 30 may be completed by removing the insulating portion MA.

9 to 10 show that the grid sheet portion 30 is attached to the frame 40 by loading the first template 50 on which the grid sheet portion 30 is supported according to an embodiment of the present invention is loaded onto the frame 40. It is a schematic diagram showing the connection process.

Referring to FIG. 9 , the first template 50 to which the grid sheet unit 30 is adhesively supported may be loaded onto the frame 40 . The first template 50 may be moved by the chuck 90 . For example, a surface opposite to the surface of the first template 50 to which the grid sheet portion 30 is attached may be suctioned and transferred by the vacuum chuck 90 .

The grid sheet portion 30 may contact and correspond to the frame 40 . That is, the edge portion 31 of the grid sheet portion 30 may contact and correspond to the upper surface of the frame 40 outside the hollow region R. By loading the first template 50 onto the frame 40 , the grid sheet portion 30 may correspond to the frame 40 . Since the first template 50 compresses the grid sheet portion 30, the grid sheet portion 30 and the frame 40 may closely contact each other.

Subsequently, the grid sheet portion 30 may be attached to the frame 40 by laser welding by irradiating the grid sheet portion 30 with a laser L to pass through the laser pass-through hole 51 . A first weld WB1, which is a welding bead, is generated between the laser welded edge portion 31 and the frame 40, and the first weld WB1 is formed on the grid sheet portion 30 (or the edge portion 31). And the frame 40 can be integrally connected.

Next, referring to FIG. 10 , after the grid sheet portion 30 is attached to the frame 40 , the grid sheet portion 30 and the first template 50 may be debonded. Separation of the grid sheet portion 30 and the first template 50 is performed by applying at least one of heat application (ET), chemical treatment (CM), ultrasonic application (US), and UV application (UV) to the temporary adhesive portion 55. can be done through For example, when heat at a temperature higher than 85° C. to 100° C. is applied, the viscosity of the temporary adhesive portion 55 is lowered, and the adhesive strength between the grid sheet portion 30 and the first template 50 is weakened, resulting in a weakening of the grid sheet. The portion 30 and the first template 50 may be separated. As another example, the grid sheet portion 30 and the first template 50 may be separated by dissolving or removing the temporary adhesive portion 55 by immersing the temporary adhesive portion 55 in a chemical such as IPA, acetone, or ethanol. can As another example, when ultrasonic waves or UV are applied, the adhesive strength between the grid sheet portion 30 and the first template 50 is weakened, and thus the grid sheet portion 30 and the first template 50 may be separated. .

Accordingly, a form in which the grid sheet portion 30 is connected to the frame 40 is completed.

11 to 13 show a second template in which a mask 20 is supported by bonding a mask metal film 20' on a second template 60 and forming a mask pattern P according to an embodiment of the present invention. It is a schematic diagram showing the process of manufacturing (60). Hereinafter, the second template 60 has substantially the same configuration as the above-described first template 50 except for the size and shape, unless otherwise specified.

Referring to FIG. 11 , a second template 60 may be prepared. In the second template 60 , a laser passage hole 61 may be formed and a temporary adhesive portion 65 may be formed. Next, the mask metal film 20 ′ may be attached to the second template 60 . The bonding method between the second template 60 and the mask metal film 20' corresponds to the bonding method between the first template 50 and the grid metal film 30' in FIG. 6 .

The mask metal film 20 ′ may be formed by performing a surface defect removal process and a thickness reduction process on one or both surfaces. As shown in FIG. 11 , after attaching the mask metal film 20 ′ to the second template 60 , a surface defect removal process and a thickness reduction process may be performed. The thickness of the mask metal layer 20 ′ may be reduced to about 2 μm to about 12 μm through the surface defect removal process and the thickness reduction process. Of course, the mask metal film 20 ′ whose thickness has already been reduced may be attached to the second template 60 . In particular, the process of removing surface defects and reducing the thickness of the mask metal film 20' may be considered more important than the process of reducing the thickness of the grid metal film 30'. Crystal grains may be irregularly included in the invar film, and in the rolled invar film, crystal grains on the surface of the rolled invar film are non-uniform in the rolling direction, whereas crystal grains in the center have a uniform shape. Therefore, it is advantageous to form a fine and uniform mask pattern P to perform the etching process using the central portion having uniform crystal grains.

In addition, an insulating portion (not shown) such as photoresist may be further interposed between the lower surface of the mask metal layer 20' and the temporary adhesive portion 65. In the step of FIG. 12, the etchant enters the interface between the mask metal film 20' and the temporary bonding portion 65 to damage the temporary bonding portion 65/second template 60, and the mask metal film 20' at the interface. In order to prevent an etching error of the mask pattern P from being further etched in the lateral direction, an insulating portion is further formed. The insulating part may include at least one of a curable negative photoresist and a negative photoresist including epoxy to have strong durability against an etching solution. For example, curing is performed in the process of baking the temporary adhesive portion 65 and baking the insulating portion MA using an epoxy-based SU-8 photoresist or a black matrix photoresist [see FIG. 12]. It is desirable to do so. Of course, in the step of FIG. 7 described above, an insulating portion (not shown) may be further interposed between the temporary bonding portion 55 and the grid metal film 30', but the edge portion 31 and the first and second grids 33 , 35) is formed on a larger scale than the mask pattern P, so the importance of the insulating portion may be relatively low.

Next, referring to FIG. 12 , a patterned insulating portion MB may be formed on the mask metal layer 20 ′. The insulating portion MB may be formed of a photoresist material using a printing method or the like.

Subsequently, etching (EC) of the mask metal layer 20' may be performed. Methods such as dry etching and wet etching may be used without limitation, and as a result of the etching, a portion of the mask metal layer 20 ′ exposed to an empty space between the insulating portions MB may be etched (EC). The etched (EC) portion of the mask metal film 20' constitutes a mask pattern P, and the mask 20 having a plurality of mask patterns P formed thereon may be manufactured.

Subsequently, referring to FIG. 13 , manufacture of a second template 60 supporting the mask 20 including the cell portion C, partition portion SR, and dummy portion DM by removing the insulating portion MB. can be completed.

14 to 16 are schematic diagrams illustrating a process of manufacturing a mask 20 by forming a mask pattern P on a mask metal film 20' according to an embodiment of the present invention. In FIG. 12 , when etching (EC) is performed on the mask metal film 20 ′ to form the mask pattern P, an etching method for realizing ultra-high resolution of 2,000 PPI will be further described in detail. Hereinafter, it will be understood that the first and second insulating parts M1 and M2 are included in the insulating part MB of FIG. 12 and the first and second mask patterns P1 and P2 are included in the mask pattern P. can For convenience of description, the configuration of the second template 60 and the like is omitted.

Referring to the first drawing of FIG. 14 , a patterned first insulating portion M1 may be formed on one surface (upper surface) of the mask metal film 20 ′. The first insulating portion M1 may be formed of a photoresist material using a printing method or the like.

The first insulating part M1 may be made of a black matrix photoresist or a photoresist material having a metal coating layer formed thereon. The black matrix photoresist may be a material containing a black matrix resin used to form a black matrix of a display panel. A black matrix photoresist may have a greater light blocking effect than a general photoresist. In addition, a photoresist having a metal coating layer formed thereon may also have a high effect of blocking light irradiated from the top by the metal coating layer.

Next, referring to the second drawing of FIG. 14 , a first mask pattern P1 may be formed to a predetermined depth by wet etching (WE1) on one surface (upper surface) of the mask metal film 20'. When performing the wet etching (WE1), it is necessary to prevent penetration of the mask metal film 20'. Thus, the first mask pattern P1 may be formed in a substantially circular arc shape without penetrating the mask metal layer 20'. That is, the depth value of the first mask pattern P1 may be smaller than the thickness of the mask metal layer 20'.

Since the wet etching (WE1) has an isotropic etching characteristic, the width (R2) of the first mask pattern (P1) does not have the same width as the interval (R3) between the patterns of the first insulating portion (M1), the first insulation It may have a wider width than the interval R3 between the patterns of the portion M1. In other words, since undercuts (UC) are formed under both sides of the first insulating portion M1, the width R2 of the first mask pattern P1 is equal to the interval R3 between the patterns of the first insulating portion M1. ) may be greater than the width of the undercut UC.

Next, referring to the third drawing of FIG. 14 , a second insulating portion M2 may be formed on one surface (upper surface) of the mask metal film 20 ′. The second insulating portion M2 may be formed of a photoresist material using a printing method or the like. Since the second insulating portion M2 needs to be left in a space where an undercut UC, which will be described later, is formed, it is preferable to use a positive-type photoresist material.

Since the second insulating portion M2 is formed on one surface (upper surface) of the mask metal film 20', a portion of the second insulating portion M2 is formed on the first insulating portion M1 and a portion is filled in the first mask pattern P1. can

A photoresist diluted in a solvent may be used for the second insulating part M2 . When a high-concentration photoresist solution is formed on the mask metal film 20' and the first insulating part M1, it reacts with the photoresist of the first insulating part M1, and a part of the first insulating part M1 is formed. may dissolve. Thus, in order not to affect the first insulating part M1, the second insulating part M2 may be diluted with a solvent to lower the concentration of the photoresist.

Next, referring to the first drawing of FIG. 15 , a portion of the second insulating portion M2 may be volatilized by performing baking. The solvent of the second insulating part M2 is volatilized by baking, and only the photoresist component remains. Thus, the second insulating portion M2' may remain thin as a coated film on the exposed portion of the first mask pattern P1 and the surface of the first insulating portion M1. The thickness of the remaining second insulating portion M2' is smaller than several μm to the extent that it does not affect the pattern width R3 of the first insulating portion M1 or the pattern width R2 of the first mask pattern P1. It is desirable that the degree

Next, referring to the second drawing of FIG. 15 , exposure EL may be performed on one surface (upper surface) of the mask metal film 20 ′. When the upper part of the first insulating part M1 is exposed (L), the first insulating part M1 may function as an exposure mask. Since the first insulating part M1 is made of a black matrix photoresist or a photoresist material having a metal coating film formed thereon, the effect of blocking light may be excellent. Thus, the second insulating portion M2 "(refer to the third drawing in FIG. 15 ) positioned vertically below the first insulating portion M1 may not be exposed EL, and the remaining insulating portion M2' may be exposed ( EL) can be.

Next, referring to the third drawing of FIG. 15, when developing after exposure (EL), the portion of the second insulating portion (M2") that is not exposed (EL) remains, and the remaining second insulating portion (M2') is removed. Since the second insulating part M2' is a positive type photoresist, the exposed portion EL may be removed. The space left by the second insulating part M2" is the first insulating part M1 It may correspond to a space in which undercuts UC are formed at both lower portions of (see step (b) of FIG. 8 ).

Next, referring to the first drawing of FIG. 16 , wet etching (WE2) may be performed on the first mask pattern P1 of the mask metal layer 20'. The wet etchant may penetrate into the space between the patterns of the first insulating part M1 and the space of the first mask pattern P1 to perform the wet etching WE2 . The second mask pattern P2 may be formed through the mask metal layer 20'. That is, it may be formed from the bottom of the first mask pattern P1 through the other surface of the mask metal layer 20'.

At this time, the second insulating portion M2" remains in the first mask pattern P1. The remaining second insulating portion M2" may serve as a mask for wet etching. That is, the second insulating part M2″ masks the etchant to prevent the etchant from being etched in the lateral direction of the first mask pattern P1 and to be etched in the direction of the lower surface of the first mask pattern P1.

Since the second insulating part M2" is disposed in the undercut (UC) space vertically below the first insulating part M1, the pattern width of the second insulating part M2" is substantially equal to the first insulating part M1. Corresponds to the pattern width (R3) of Accordingly, the second mask pattern P2 becomes the same as that obtained by performing wet etching (WE2) on the gap R3 between the patterns of the first insulating portion M1. Accordingly, the width R1 of the second mask pattern P2 may be smaller than the width R2 of the first mask pattern P1.

Since the width of the second mask pattern P2 defines the width of a pixel, it may have a width corresponding to an ultra-high resolution pixel. In addition, if the thickness of the second mask pattern P2 is too thick, it is difficult to control the width R1 of the second mask pattern P2 and the uniformity of the widths R1 is lowered, and the shape of the mask pattern P is Since a problem of not appearing as a whole tapered/reverse tapered shape may occur, the thickness of the second mask pattern P2 is preferably smaller than that of the first mask pattern P1. The thickness of the second mask pattern P2 is preferably as close to 0 as possible.

The sum of the shapes of the connected first and second mask patterns P1 and P2 may form the mask pattern P.

Next, referring to the second drawing of FIG. 16 , the manufacture of the mask 20 may be completed by removing the first insulating portion M1 and the second insulating portion M2 . Since the first and second mask patterns P1 are formed to include inclined surfaces, and the height of the second mask pattern P2 is formed to be very low, the shapes of the first and second mask patterns P1 and P2 are formed. By summing , a tapered shape or a reverse tapered shape can be represented as a whole.

Since wet etching is performed isotropically, the shape to be etched tends to exhibit a substantially circular arc shape. In addition, in the wet etching process, it is difficult for each part to be etched at exactly the same speed, and in the case where a mask pattern is formed by penetrating the mask metal film 20' by performing wet etching only once, the deviation may be even greater. . For example, even if two mask patterns having a difference in wet etching speed are compared, the difference in upper width (undercut) is not so great. However, when comparing the lower width of the mask metal film 20 ′ penetrated by the mask pattern formation, the lower width difference becomes much larger than the upper width difference due to a slight difference in wet etching rate. This is a result that appears because wet etching is performed isotropically. In other words, since the width determining the size of the pixel is the lower width of the mask pattern than the upper width, it is better to perform etching twice to form the first and second mask patterns P1 and P2, respectively, rather than etching once. There is an effect of making it easy to control the lower width influenced by the 2 mask pattern P2.

17 is a schematic diagram illustrating a process of manufacturing a mask 20 by forming a mask pattern P on a mask metal film 20' according to another embodiment of the present invention.

Referring to the first drawing of FIG. 17, as shown in the second drawing of FIG. A first mask pattern P1 may be formed to a predetermined depth by wet etching (WE1) on one surface (upper surface) of '). Since the wet etching (WE1) has an isotropic etching characteristic, the width (R2) of the first mask pattern (P1) does not have the same width as the interval (R3) between the patterns of the first insulating portion (M1), the first insulation It may have a wider width than the interval R3 between the patterns of the portion M1. In other words, since undercuts (UC) are formed under both sides of the first insulating portion M1, the width R2 of the first mask pattern P1 is equal to the interval R3 between the patterns of the first insulating portion M1. ) may be greater than the width of the undercut UC.

Next, referring to the second drawing of FIG. 17 , a second mask pattern P2 may be formed on one surface (upper surface) of the mask metal film 20 ′ by dry etching (DE) or laser etching (LE). During dry etching (DE) or laser etching (LE), there is an advantage in that the first insulating portion M1 can be applied as an etching mask as it is. For laser etching (LE), a known technique may be used without limitation, but more precise etching may be performed using a femtosecond or picosecond laser.

Dry etching (DE) or laser etching (LE) has an anisotropic characteristic and may be performed on the same width R3 as the space between the patterns of the first insulating part M1. Alternatively, since dry etching (DE) or laser etching (LE) has an anisotropic characteristic, it may be performed on a width smaller than the width (R3) between patterns of the first insulating portion (M1). As dry etching (DE) or laser etching (LE) is performed, there is an advantage in that a desired width can be precisely etched. The second mask pattern P2 may be formed through the mask metal layer 20'. That is, it may be formed from the bottom of the first mask pattern P1 through the other surface of the mask metal layer 20'.

Next, referring to the third drawing of FIG. 17 , the manufacture of the mask 20 may be completed by removing the first insulating portion M1 . Since the first and second mask patterns P1 are formed to include inclined surfaces, and the height of the second mask pattern P2 is formed to be very low, the shapes of the first and second mask patterns P1 and P2 are formed. By summing , a tapered shape or a reverse tapered shape can be represented as a whole. Since the width R1 of the second mask pattern P2 defines the width of a pixel, it may have a width corresponding to an ultra-high resolution pixel. There is an advantage in that the width R1 of the second mask pattern P2 can be precisely formed through dry etching (DE) or laser etching (LE).

18 to 19 show that the mask 20 is attached to the grid sheet portion 30 by loading the second template 60 on which the mask 20 is supported according to an embodiment of the present invention is loaded onto the grid sheet portion 30. It is a schematic diagram showing the connection process. The method of connecting the mask 20 to the grid sheet portion 30 corresponds to the method of connecting the grid sheet portion 30 and the template 40 of FIG. 9 .

Referring to FIG. 18 , the second template 60 to which the mask 20 is adhesively supported may be loaded onto the frame 40 . The first template 50 may be moved by the chuck 90 . For example, a surface opposite to the surface of the first template 50 to which the grid sheet portion 30 is attached may be suctioned and transferred by the vacuum chuck 90 .

The mask 20 may contact and correspond to the grid sheet portion 30 . That is, the dummy part DM and the edge part 31, the partition part SR, and the first and second grid parts 33 and 35 contact each other, and the cell part CR and the cell region CR correspond to each other. It can be. By loading the second template 60 onto the grid sheet portion 30 , the mask 20 may correspond to the grid sheet portion 30 . Since the second template 60 compresses the mask 20, the mask 20 and the grid sheet portion 30 may closely contact each other.

Subsequently, the mask 20 may be irradiated with a laser L to pass through the laser passage hole 61 and the mask 20 may be attached to the grid sheet portion 30 by laser welding. A second welded portion WB2, which is a weld bead, is generated between the laser-welded dummy portion DM and the edge portion 31, and the second welded portion WB2 is coupled to the mask 20 (or the dummy portion DM). The grid sheet portion 30 may be integrally connected.

Next, referring to FIG. 19 , after attaching the mask 20 to the grid sheet portion 30 , the mask 20 and the second template 60 may be debonded. The separation of the mask 20 and the second template 60 is performed by at least one of heat application (ET), chemical treatment (CM), ultrasonic application (US), and UV application (UV) to the temporary adhesive portion 65. can do.

Accordingly, a form in which the mask 20 is connected to the grid sheet portion 30 is completed. Manufacturing of the frame-integrated mask 10 including the mask 20, the grid sheet portion 30, and the frame 40 is completed.

20 is a schematic diagram showing a connection form between a mask 20 and a grid sheet portion 30 according to various embodiments of the present invention.

As described above, the grid sheet portion 30 and the mask 20 may be further connected through a third welding portion WB3 in addition to being connected through the second welding portion WB2 . Unlike the first and second welds WB1 and WB2 , the third weld portion WB3 may be formed by irradiating the laser L2 from the lower portion (or toward the hollow region R). The first and second welded parts WB1 and WB2 are formed through the laser L through the laser pass-through holes 51 and 61 of the first and second templates 50 and 60, but the third welded part WB3 is formed. The first and second grid portions 33 and 35 are blocked by the second template 60 . In addition, since the partitioning portion SR of the mask 20 on the first and second grid portions 33 and 35 is a portion that substantially contacts the semiconductor wafer, which is the target substrate 900, during the OLED pixel deposition process, laser is irradiated from the top If the weld bead is formed, there is a problem in that the third weld portion WB3 protrudes upward to cause lifting between the mask 20 and the target substrate 900 . Therefore, it is necessary to irradiate the laser beam L2 from the bottom so that the third welded portion WB3 protrudes downward so that there is no lifting between the mask 20 and the target substrate 900 .

According to one embodiment, as shown in the left enlarged view of FIG. 20 , the third welding part WB3 may be directly formed on the mask 20 and the first and second grid parts 33 and 35 .

According to another embodiment, as shown in the right enlarged view of FIG. 20 , the first and second grid parts 33' and 35' having weld grooves WH may be provided. The weld groove WH may be formed in the same manner as in the step of etching (EC) the grid metal film 30' of FIG. 7 .

Meanwhile, in the process of forming the third weld portion WB3, since the second template 60 supports the opposite surface of the mask 20 on which the third weld portion WB3 is formed, the formation of the third weld portion WB3 is stable. There is an advantage that can be done with. In addition, there is an advantage in that the second template 60 prevents the third weld portion WB3 from protruding toward the opposite surface of the mask 20 while being formed.

According to another embodiment, based on the illustrated state of FIG. 20 , the third welded portion WB3 may be formed by irradiating the laser L2 from the bottom. However, in addition to this, the frame 40 / grid sheet part 30 / mask 20 (and the second template 60) are flipped and turned over, and then the laser L2 is irradiated from the top to form the third welding part. (WB3) can also be formed.

Since the weld groove WH is formed in the first and second grid portions 33' and 35', the portion of the first and second grid portions 33' and 35' where the third weld portion WB3 is substantially formed is can be thinned Accordingly, the third welding portion WB3 is formed even with the laser L2 having a small output, so that the mask 20 and the first and second grid portions 33' and 35' can be attached. In addition, since the third welding portion WB3 is formed in a relatively small size, stress applied to the mask 20 and the first and second grid portions 33' and 35' can be reduced, thereby reducing the position of the mask pattern P. can be prevented from changing.

Since the thickness of the mask 20 capable of realizing ultra-high resolution of about 2,000 PPI level is less than about 12 μm, a problem in that the tension of the very thin mask film itself varies from region to region occurs. In addition, it is very difficult to apply uniform tension throughout by clipping the mask 20 in order to tighten the mask 20 . In order to solve this problem, the present invention forms the grid sheet portion 30 in a circular shape, directly clips the grid sheet portion 30, and controls only the first template 50 without applying a tensile force to form the frame 40. attach to top Subsequently, the mask 20 is formed in a circular shape, and only the second template 60 is controlled and attached onto the grid sheet portion 30 without directly clipping the mask 20 and applying a tensile force. Due to the above double template process, the grid sheet portion 30 and the mask 20, which are components of the frame-integrated mask 10, are interconnected in a taut state without applying tension by direct clipping, and at the same time, the mask cell portion (C) and the alignment of the mask pattern P becomes clear. Accordingly, there is an effect of implementing high-resolution pixels of 2,000 PPI or more.

21 is a schematic diagram showing an OLED pixel deposition apparatus 200 to which a frame-integrated mask 10 according to an embodiment of the present invention is applied.

Referring to FIG. 21 , the OLED pixel deposition apparatus 200 includes a magnet plate 300 in which a magnet 310 is accommodated and a cooling water line 350 is disposed, and an organic material source 600 from a lower portion of the magnet plate 300. ) and a deposition source supply unit 500 for supplying.

A target substrate 900 such as glass on which the organic material source 600 is deposited may be interposed between the magnet plate 300 and the source deposition unit 500 . The frame-integrated mask 10 for depositing the organic material source 600 pixel by pixel may be disposed on the target substrate 900 so as to be in close contact with or very close to the target substrate 900 . The magnet 310 generates a magnetic field, and the frame-integrated mask 10 may adhere to the target substrate 900 by attraction caused by the magnetic field.

The deposition source supply unit 500 may supply the organic material source 600 by reciprocating left and right paths, and the organic material sources 600 supplied from the deposition source supply unit 500 form a mask pattern P formed on the frame-integrated mask 10. may pass through and be deposited on one side of the target substrate 900 . The deposited organic material source 600 passing through the mask pattern P of the frame-integrated mask 10 may serve as a pixel 700 of the OLED.

Since the mask pattern P is formed with an inclined side (formed in a tapered shape), the deposition of the OLED pixels 700 is non-uniform due to the shadow effect caused by the organic material sources 600 passing along the inclined direction. can prevent it from happening.

22 is a schematic plan view and a BB' schematic side cross-sectional view showing a connection form between the grid sheet portion 30 and the frame 40 according to another embodiment of the present invention. 23 is a schematic plan view and E-E' schematic side cross-sectional view showing a mask 20 according to another embodiment of the present invention.

22, in the grid sheet portion 30 according to another embodiment of the present invention, the first and second grid portions 33' and 35' of the first and second grid portions 33 and 35 have specific widths. It may be formed wider than the other first and second grid parts 33 and 35 . According to an embodiment, the first grid part 33' formed in the center of the plurality of first grid parts 33 and the second grid part 35' formed in the center of the plurality of second grid parts 33 ) can have a wider width. A part where the first grid part 33' and the second grid part 35' intersect may be formed wide in a '+' shape as a whole. According to another embodiment, the center and several first and second grid parts 33' and 35' adjacent thereto may be formed wider. According to another embodiment, the first and second grid portions 33' and 35' of the grid sheet portion 30 may be formed to have a wider width by dividing a specific partial area from the entire grid sheet portion 30.

For example, when the width of the first and second grid portions 33 and 35 is 1 mm, the specific first and second grid portions 33' and 35' may have a width of 3 mm. Since the specific first and second grid parts 33' and 35' have a wide width, this part may have greater rigidity than the other first and second grid parts 33 and 35.

Referring to FIG. 23 , the width of the dividing portion SR of the mask 20 is determined by the first and second grid portions 33 and 35 of the grid portion 30 and the specific first and second grid portions 33' and 35'. ) can be formed to correspond to. From another point of view, the cell portions C of the mask 20 may be formed to correspond to the cell regions CR of the grid portion 30 . Accordingly, even when the mask 20 is connected to the grid sheet portion 30, the central portion of the mask 20 corresponding to the first and second grid portions 33' and 35' sags, wrinkles, or deforms due to its own weight. It can be connected while being stably supported on the grid sheet part 30 without occurrence of such.

Although the present invention has been shown and described with preferred embodiments as described above, it is not limited to the above embodiments, and various variations can be made by those skilled in the art within the scope of not departing from the spirit of the present invention. Transformation and change are possible. Such modifications and variations are to be regarded as falling within the scope of this invention and the appended claims.

10: frame integral mask
20: mask
C, SR, DM: cell part, compartment part, dummy part
30: grid sheet portion
31: border
33, 35: first and second grid parts
40: frame
50, 60: template
51, 61: laser pass-through hole
55, 65: temporary adhesive part
200: OLED pixel deposition device
R: hollow area of frame
P: mask pattern

Claims (22)

A frame-integrated mask used in a process of forming an OLED pixel on a semiconductor wafer,
a frame in which a hollow region is formed;
a grid sheet portion connected to the frame, having a circular edge, and including a grid portion disposed on at least a hollow region of the frame;
a mask connected to the grid sheet portion, having a circular shape, and including a mask pattern;
Including, frame integral mask. According to claim 1,
The grid sheet portion,
an edge portion connected to the frame;
a plurality of first grid parts extending in a first direction and having both ends connected to the edge part;
a plurality of second grid portions extending in a second direction perpendicular to the first direction, crossing the first grid portion, and having both ends connected to the edge portion;
Including, frame integral mask. According to claim 2,
A frame-integrated mask, wherein a first weld is formed on at least a portion of the edge portion to attach the grid sheet portion and the frame. According to claim 2,
the mask,
a dummy part connected to the grid sheet part;
a plurality of cell parts disposed at a center of the mask rather than the dummy part and including a plurality of mask patterns;
a partition portion disposed at a central portion of the mask rather than the dummy portion and disposed between the plurality of cell portions;
Including, frame integral mask. According to claim 4,
A frame-integrated mask, wherein a second weld portion is formed on at least a portion of the dummy portion to attach the mask and the grid sheet portion. According to claim 4,
The first grid part and the second grid part are disposed below the dividing part, a frame-integrated mask. According to claim 6,
A frame-integrated mask, wherein a third welding portion is formed on at least a portion of the first grid portion and the second grid portion to attach the first grid portion and the second grid portion to the dividing portion. According to claim 7,
The third welding part is formed to protrude in a direction opposite to a surface where at least the first grid part and the second grid part come into contact with the dividing part,
The frame-integrated mask, wherein welding grooves are formed in the direction of the opposite surface in the first grid part and the second grid part where the third welding part is formed. According to claim 1,
The mask has a thickness of 2 μm to 12 μm, and the grid sheet portion has a thickness of 20 μm to 50 μm. According to claim 1,
The mask pattern includes an upper first mask pattern and a lower second mask pattern,
The thickness of the first mask pattern is thicker than the thickness of the second mask pattern, the frame integrated mask. According to claim 10,
Both side surfaces of the first mask pattern and the second mask pattern are formed to have a curvature, the frame integrated mask. According to claim 10,
The resolution of the mask pattern is higher than at least 2,000 pixels per inch (PPI), frame integrated mask. According to claim 2,
A frame-integrated mask, wherein a specific first grid part and a second grid part among the first grid part and the second grid part have a wider width than the other first grid parts and second grid parts. A method for manufacturing a frame-integrated mask used in a process of forming an OLED pixel on a semiconductor wafer,
(a) connecting a grid sheet portion having a circular edge to a frame having a hollow region, wherein the grid sheet portion includes at least a grid portion disposed on the hollow region of the frame;
(b) connecting a mask having a circular shape and including a mask pattern on the grid sheet portion;
A method of manufacturing a frame-integrated mask comprising a. According to claim 14,
The grid sheet portion,
an edge portion connected to the frame;
a plurality of first grid parts extending in a first direction and having both ends connected to the edge part;
a plurality of second grid portions extending in a second direction perpendicular to the first direction, crossing the first grid portion, and having both ends connected to the edge portion;
A method of manufacturing a frame-integrated mask comprising a. According to claim 14,
In step (a),
(a1) loading the first template to which the grid sheet is adhered onto the frame and bringing the grid sheet into contact with the frame;
(a2) attaching the grid sheet to the frame by radiating a laser beam to at least a portion of a contact area between the grid sheet and the frame;
A method of manufacturing a frame-integrated mask comprising a. According to claim 16,
In the step (a1), the first template to which the grid sheet portion is adhered,
(1) attaching a grid metal film onto the first template having a temporary adhesive portion formed on one surface thereof;
(2) forming the grid part by etching the grid metal film;
A method of manufacturing a frame-integrated mask provided through. According to claim 14,
the mask,
a dummy part connected to the grid sheet part;
a plurality of cell parts disposed at a center of the mask rather than the dummy part and including a plurality of mask patterns;
a partition portion disposed at a central portion of the mask rather than the dummy portion and disposed between the plurality of cell portions;
A method of manufacturing a frame-integrated mask comprising a. According to claim 14,
In step (b),
(b1) loading the second template to which the mask is attached onto the grid sheet portion and bringing the mask into contact with the grid sheet portion;
(b2) attaching the mask to the grid sheet portion by irradiating a laser beam on at least a portion of a region where the mask and the grid sheet portion are in contact;
A method of manufacturing a frame-integrated mask comprising a. According to claim 19,
In the step (b1), the second template to which the mask is attached,
(1) bonding a mask metal film onto the second template having a temporary bonding portion formed on one surface thereof;
(2) forming a plurality of mask patterns by etching the mask metal film;
A method of manufacturing a frame-integrated mask provided through. According to claim 18,
The method of manufacturing a frame-integrated mask further performing a step of attaching at least a part of the grid part and the partition part by irradiating a laser on a surface opposite to the surface where the grid part and the partition part are in contact. According to claim 17,
In the step (2), further forming a welding groove in the grid portion,
A frame-integrated mask further performing the step of attaching at least a portion of the grid portion and the mask by contacting a surface of the grid portion opposite to the surface on which the weld groove is formed, and irradiating a laser from the surface on which the weld groove is formed. manufacturing method.

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