KR102666398B1 - Producing method of mask - Google Patents

Abstract

The present invention relates to a method of manufacturing a mask. A method of manufacturing a mask according to the present invention is a method of manufacturing a mask for forming OLED pixels, comprising the steps of (a) preparing a mask metal film; (b) forming a first patterned insulating portion on at least a first side of the mask metal film; (c) forming a sub-mask pattern in the mask metal film through the space between the patterns of the first insulating part on the first side of the mask metal film; (d) bonding the first surface of the mask metal film on which the sub-mask pattern is formed to a support substrate via a barrier insulating part; (e) manufacturing a mask by forming a main mask pattern on the mask metal film through the space between the patterns of the second insulating part formed on the second surface opposite to the first surface of the mask metal film.

Description

Mask manufacturing method {PRODUCING METHOD OF MASK}

The present invention relates to a method of manufacturing a mask. More specifically, it relates to a method of manufacturing a mask that can stably form a mask pattern on the mask.

As a technology to form pixels in the OLED manufacturing process, the FMM (Fine Metal Mask) method is mainly used, which deposits organic materials at a desired location by attaching a thin metal mask (shadow mask) to the substrate.

In the existing OLED manufacturing process, the mask is manufactured in the form of a stick or plate and then used by welding and fixing the mask to the OLED pixel deposition frame. One mask may have multiple cells corresponding to one display.

In the case of high-definition OLED, the current QHD image quality is 500 to 600 PPI (pixel per inch), with a pixel size of about 30 to 50㎛, and 4K UHD and 8K UHD high definition are higher than this, such as ~860 PPI and ~1600 PPI. It has resolution. Considering the pixel size of ultra-high-definition OLEDs, the alignment error between each cell must be reduced to several ㎛, and any error beyond this can lead to product failure, resulting in very low yield.

In addition, as OLEDs become larger in area and have higher resolution, the mask is required to gradually become thinner and larger in area. In general, a method of etching a rolled mask metal film has been used to form a mask pattern on a large-area mask. Alternatively, a method of forming a mask pattern by placing a large-area mask on a specific support plate and performing etching in only one direction has been used. With conventional methods, it is not easy to form a mask pattern with uniformity across all parts of a large-area mask, especially between each cell, and since etching is performed in only one direction, it is difficult to precisely control the width and depth of the mask pattern. There was this.

Therefore, there is a need for a method of manufacturing a mask that can be used in a large-area pixel process and has a fine mask pattern so that a high-definition pixel process can be performed.

Accordingly, the present invention was devised to solve all the problems of the prior art as described above, and its purpose is to provide a mask manufacturing method that can stably form a mask pattern when manufacturing a mask.

In addition, the purpose of the present invention is to provide a mask manufacturing method that can precisely control the width and depth of the mask pattern by performing etching in both directions during the mask manufacturing process.

The above object of the present invention is a method of manufacturing a mask for forming an OLED pixel, comprising: (a) preparing a mask metal film; (b) forming a first patterned insulating portion on at least a first side of the mask metal film; (c) forming a sub-mask pattern in the mask metal film through the space between the patterns of the first insulating part on the first side of the mask metal film; (d) bonding the first surface of the mask metal film on which the sub-mask pattern is formed to a support substrate via a barrier insulating part; (e) manufacturing a mask by forming a main mask pattern on the mask metal film through the space between the patterns of the second insulating part formed on the second surface opposite to the first surface of the mask metal film. It is achieved by method.

(f) separating the mask from the support substrate.

In step (b), a first insulating part patterned on the first side and a second insulating part patterned on a second side opposite the first side may be formed.

In step (c), the sub-mask pattern may be formed so as not to penetrate the mask metal film.

The pattern spacing of the first insulating part may be smaller than the pattern spacing of the second insulating part.

In step (e), the main mask pattern is formed to penetrate the mask metal film, and the mask pattern can be formed by the sum of the main mask pattern and the sub mask pattern.

Step (a) includes (a1) preparing a mask metal film; (a2) forming a carrier portion on the second side of the mask metal film; (a3) reducing the thickness of the mask metal film on the first side of the mask metal film.

(a4) forming alignment marks on at least a portion of dummy areas on both sides excluding the plurality of mask cell areas of the mask metal film.

Between steps (d) and (e), the step of separating the carrier portion from the second side of the mask metal film may be further included.

The second insulating part is not formed on the alignment mark, and the alignment mark on the mask metal film may be removed in step (e).

Step (a) includes (a1) preparing a mask metal film; (a2) forming a carrier portion on the second side of the mask metal film; and the thickness of the mask metal film may be reduced on the second side of the mask metal film between steps (d) and (e).

According to the present invention configured as described above, there is an effect of stably forming a mask pattern when manufacturing a mask.

In addition, according to the present invention, the width and depth of the mask pattern can be precisely controlled by etching in both directions during the mask manufacturing process.

1 is a schematic diagram showing the process of attaching a mask to a frame.
2 to 5 are schematic diagrams showing the manufacturing process of a mask according to an embodiment of the present invention. At each stage, the upper drawing shows a schematic plan view, and the lower drawing shows a schematic side cross-sectional view.
6 to 8 are schematic diagrams showing the manufacturing process of a mask according to another embodiment of the present invention. At each stage, the upper drawing shows a schematic plan view, and the lower drawing shows a schematic side cross-sectional view.

The detailed description of the present invention described below refers to the accompanying drawings, which show by way of example specific embodiments in which the present invention may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the invention. It should be understood that the various embodiments of the present invention are different from one another but are not necessarily mutually exclusive. For example, specific shapes, structures and characteristics described herein with respect to one embodiment may be implemented in other embodiments without departing from the spirit and scope of the invention. Additionally, it should be understood that the location or arrangement of individual components within each disclosed embodiment may be changed without departing from the spirit and scope of the invention. Accordingly, the detailed description that follows is not intended to be taken in a limiting sense, and the scope of the invention is limited only by the appended claims, together with all equivalents to what those claims assert, if properly described. Similar reference numbers in the drawings refer to identical or similar functions across various aspects, and the length, area, thickness, etc. may be exaggerated for convenience.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the attached drawings in order to enable those skilled in the art to easily practice the present invention.

Figure 1 is a schematic diagram showing the process of attaching the mask 10 to the frame 20.

The conventional mask 10 is of a stick-type or plate-type, and the stick-type mask 10 of FIG. 1 can be used by welding and fixing both sides of the stick to the OLED pixel deposition frame. The body of the mask 10 (or the mask film 11) is provided with a plurality of display cells C. One cell (C) corresponds to one display, such as a smartphone. A pixel pattern (P) is formed in the cell (C) to correspond to each pixel of the display.

Referring to (a) of FIG. 1, the stick mask 10 is loaded onto the square-shaped frame 20 in an unfolded state by applying tension (F1 to F2) in the long axis direction of the stick mask 10. Cells C1 to C6 of the stick mask 10 are located in an empty area inside the frame 20.

Referring to (b) of FIG. 1, after aligning the stick mask 10 by finely controlling the tension (F1 to F2) applied to each side, a portion of the side of the stick mask 10 is welded (W). Accordingly, the stick mask 10 and the frame 20 are interconnected. Figure 1 (c) shows a side cross-section of the interconnected stick mask 10 and the frame.

After placing the connector in which the plurality of stick masks 10 and the frame 20 are interconnected in close contact with or close to the OLED pixel formation target substrate of the OLED pixel deposition device, an organic source is deposited on the lower part of the stick mask 10. You can. The organic material source passed through the pixel pattern P of the mask 10 and deposited on the substrate on which the OLED pixel is to be formed may function as a pixel of the OLED.

Conventionally, in order to form a mask pattern on a large-area mask, etching was performed on a rolled mask metal film, or a large-area mask was placed on a specific support plate and etching was performed in only one direction. It is not easy to apply a process to reduce the thickness of a rolled metal film, which is a rolled mask metal film. There is the inconvenience of having to use a material whose thickness has been separately reduced before the mask pattern formation process or having to perform thickness reduction after the mask pattern formation process. In addition, since both ends of the rolled mask metal film are rolled up on the support shaft, the support is unstable, so there is a problem in that the non-uniformity of the mask pattern increases between each cell of the large-area mask. When etching is performed in only one direction, there is a problem in that it is difficult to precisely control the width and depth of the mask pattern.

Therefore, the present invention applies the mask pattern etching process in both directions and simultaneously supports the large-area mask with a support substrate or carrier to stably perform the mask pattern formation process and also stably perform the mask metal film thickness reduction process. Provides a method of manufacturing a mask that can be used.

2 to 5 are schematic diagrams showing the manufacturing process of a mask according to an embodiment of the present invention. At each stage, the upper drawing shows a schematic plan view, and the lower drawing shows a schematic side cross-sectional view.

First, referring to (a) of FIG. 2, a mask metal film 110 for mask manufacturing can be prepared. A plurality of mask patterns (P) are formed in the mask 100 (see FIG. 5) of the present invention, and one mask 100 has one or a plurality of cells (C), which are units in which the mask patterns (P) are clustered. May be included. One mask cell (C) can correspond to one display, such as a smartphone. FIG. 5 shows an embodiment in which one mask cell C is included in the mask 100.

The mask metal film 110 (or mask 100) may be made of a material such as invar, super invar, nickel (Ni), or nickel-cobalt (Ni-Co). The mask metal film 110 (or mask 100) may use a metal sheet produced through a rolling process or electroforming. Metal sheets can be flattened or have a reduced surface thickness on one or both sides. Planarization and surface thickness reduction can be performed by CMP methods, etc. In general, in the case of a metal film (sheet) produced by rolling, the shape and direction of crystal grains on the surface, that is, the upper and lower surfaces, are different from the central part of the metal film. While the grains of the upper and lower layers are oriented long in the rolling direction and have an irregular shape due to rolling, the grains of the central portion are generally unoriented and have a spherical shape, so it is considered desirable to use the central portion.

Next, the patterned first insulating portion 31 may be formed on at least the first surface 111 of the mask metal film 110 (eg, the lower surface of the mask metal film 110). The space 32 between the patterns of the first insulating portion 31 may be prepared to correspond to the mask cell (C).

In addition, the second insulating portion 41 may be formed on the second surface 112 (for example, the upper surface of the mask metal film 110) opposing the first surface 111 of the mask metal film 110. You can. The space 42 between the patterns of the second insulating portion 41 may be prepared to correspond to the mask cell (C).

As will be described later, the first insulating portion 31 is a pattern for forming the sub mask pattern (P2) and the second insulating portion 41 is a pattern for forming the main mask pattern (P1), so the pattern of the first insulating portion 31 The spacing (width of the space 32 between patterns) is preferably smaller than the pattern spacing (width of the space 42 between patterns) of the second insulating portion 41.

The first and second insulating parts 31 and 41 may be formed of a photoresist material using a printing method or the like. Both sides of the mask metal film 110 can be tightened by fixing it to a clamping means (not shown), and then the first and second insulating parts 31 and 41 can be formed.

Next, referring to (b) of FIG. 2, a sub-mask pattern P2 may be formed on the first surface (lower surface) of the metal film 110. The sub-mask pattern P2 may be formed by etching the space 32 between the patterns of the first insulating portion 31 formed on the first surface (lower surface) of the mask metal film 110. The sub-mask pattern P2 can be formed in the mask cell C area of the mask metal film 110, and etching methods such as dry etching and wet etching can be used without limitation.

For example, when wet etching is used, undercut occurs due to isotropic etching, so the width of the sub-mask pattern P2 may be larger than the width of the space 32 between the patterns of the first insulating portion 31. . For this reason, it is desirable to form the sub-mask pattern P2 to a very small thickness relative to the thickness of the mask metal film 110. That is, the etching may be performed only to a very small thickness so as not to penetrate the mask metal film 110 so as to approach the width of the lower part of the mask pattern P, which is the intended setting value. According to one embodiment, based on the mask metal film 110 having a thickness of about 20 μm, the thickness of the sub-mask pattern P2 may be formed to be less than about 5 μm, and preferably less than about 2 μm. The width of the sub mask pattern P2 may be about 10 to 25 μm.

Next, referring to (c) of FIG. 3, the first insulating portion 31 on the first side of the mask metal film 110 may be removed. The sub mask pattern P2 may be exposed on the first side. Instead of forming the second insulating part 41 in step (a) of FIG. 2, the second insulating part 41 may be formed in this step.

Next, referring to (d) of FIG. 3, a support substrate 50 may be prepared, and the first side of the mask metal film 110 may be adhered to the support substrate 50. The support substrate 50 preferably has a flat shape with a larger area than the mask metal film 110, and may be made of a material such as glass or quartz.

Instead of forming the second insulating part 41 in step (a) of FIG. 2, the second insulating part 41 may be formed in this step. Additionally, in this case, before forming the second insulating portion 41, a planarization or thickness reduction process such as a CMP method may be further performed on the second surface of the mask metal film 110.

The first surface of the mask metal film 110 and the support substrate 50 may be adhered via the barrier insulating portion 60. A barrier insulating portion 60 may be formed in advance on the first surface of the mask metal film 110 and/or the upper surface of the support substrate 50 before adhesion. The barrier insulating portion 60 may also be made of a photoresist material like the first and second insulating portions 31 and 41. The barrier insulating portion 60 may be filled in the sub-mask pattern P2 exposed on the first surface of the mask metal film 110 . Accordingly, it may serve to prevent the shape of the sub-mask pattern (P2) from changing during the formation of the main mask pattern (P1), which will be described later.

Meanwhile, a temporary adhesive portion (not shown) may be further interposed between the barrier insulating portion 60 and the support substrate 50. The temporary adhesive unit can ensure that the mask metal film 110 is better adhered to and supported on one side of the support substrate 50 until the mask pattern (P) process is completed on the mask metal film 110 and the mask 100 is manufactured. there is. The temporary adhesive portion 55 may use an adhesive that can be separated by applying heat or an adhesive that can be separated by UV irradiation.

As an example, the temporary adhesive may use liquid wax. The liquid wax can be the same as the wax used in the polishing step of a semiconductor wafer, and the type is not particularly limited. Liquid wax is mainly a resin component for controlling adhesion, impact resistance, etc. regarding holding power, and may include substances such as acrylic, vinyl acetate, nylon, and various polymers, and solvents. As an example, the temporary adhesive may use SKYLIQUID ABR-4016, which contains acrylonitrile butadiene rubber (ABR) as a resin component and n-propyl alcohol as a solvent component. Liquid wax can form the temporary adhesive portion 55 using spin coating.

During the etching process of forming the main mask pattern P1, which will be described later, the barrier insulating portion 60 enters the interface between the mask metal film 110 and the temporary adhesive portion, damaging the temporary adhesive portion/support substrate 50. It can play a role in preventing etch errors in the main mask pattern (P1) from occurring. The barrier insulating portion 60 may be formed on the mask metal film 110 using a printing method or the like using a negative or positive photoresist material that is not etched by an etchant. Additionally, in order to preserve the original shape during the wet etching process, the barrier insulating portion 60 may use a curable negative photoresist, a negative photoresist containing epoxy, etc. For example, epoxy-based SU-8 photoresist or black matrix photoresist can be used to cure the temporary adhesive during baking, etc.

Next, referring to (e) of FIG. 4 , the main mask pattern P1 may be formed on the second surface (upper surface) opposite to the first surface (lower surface) of the mask metal film 110. The main mask pattern P1 may be formed by etching the space 42 between the patterns of the second insulating part 41 formed on the second surface (upper surface) of the mask metal film 110. The main mask pattern P1 may be formed to correspond to the sub mask pattern P2. The main mask pattern P1 can be formed in each mask cell C area of the mask metal film 110, and dry etching, wet etching, etc. can be used for etching without limitation.

For example, when wet etching is used, undercut occurs due to isotropic etching, so the width of the main mask pattern P1 may be larger than the width of the space 42 between the patterns of the second insulating portion 41. . Considering this, it is desirable to set the width between patterns of the second insulating portion 41. According to one embodiment, the main mask pattern P1 may be formed to be about 15 to 18 μm thick based on the mask metal film 110 having a thickness of about 20 μm. The width of the main mask pattern P1 may be about 30 to 40 μm, but is not limited thereto.

The etching process of the main mask pattern P1 may be performed up to the interface where the sub mask pattern P2 is formed, that is, the portion where the barrier insulating portion 60 is formed. The main mask pattern (P1) may be connected to the sub mask pattern (P2).

Next, referring to (f) of FIG. 4, the second insulating portion 41 can be removed. By forming the main mask pattern (P1), the mask metal film 110 is penetrated, and the mask pattern (P) can be formed by the sum of the main mask pattern (P1) and the sub mask pattern (P2). As the plurality of mask patterns P are formed, the mask metal film 110 can function as the mask 100 .

Next, referring to (g) of FIG. 5 , the step of separating the mask 100 from the support substrate 50 may be further performed. Separation can be performed by removing the barrier insulation portion 60 between the support substrate 50 and the mask 100, and if the support substrate 50 and the mask 100 are further bonded through the temporary adhesive portion, the temporary adhesive portion Separation may be performed through at least one of heat application, chemical treatment, ultrasound application, and UV application.

Accordingly, manufacturing of the mask 100 can be completed.

Meanwhile, in a state in which step (f) of FIG. 4 is reached, a laminate in which the mask 100 is attached to the support substrate 50 via a barrier insulating part 60 and a temporary adhesive part (not shown) may be used. . In this case, the mask 100 can be aligned with the frame (not shown) by moving only the support substrate 50, and then the mask 100 and the frame can be attached. A frame-integrated mask to which a frame and a mask 100 are attached can be used in an OLED pixel deposition process. In addition, a laser passing hole (not shown) may be further formed in a portion of the support substrate 50 where the laser is irradiated to weld the mask 100 and the frame.

6 to 8 are schematic diagrams showing the manufacturing process of a mask according to another embodiment of the present invention. At each stage, the upper drawing shows a schematic plan view, and the lower drawing shows a schematic side cross-sectional view.

The manufacturing process of a mask according to another embodiment of the present invention may be performed with some changes to the steps described above in FIGS. 2 to 5. Steps indicated by (a1), (b1), etc. mean steps corresponding to steps (a) and (b) of FIGS. 2 to 5 described above.

Referring to (a1) of FIG. 6, after preparing the mask metal film 110' for mask manufacturing, the carrier parts 65 and 70 are placed on the second side (upper surface) of the mask metal film 110'. can be formed. The carrier part may be a flat carrier substrate 70 on which the temporary adhesive part 65 is formed, but the carrier part in the form of a protective film may also be used. In addition, the mask metal film 110' may be bonded to the carrier substrate 70 using a temporary adhesive, photoresist, alcohol, water, etc., or an electrostatic method or a magnetic method.

Next, referring to (a2) of FIG. 6, a process of reducing thickness (T) can be performed while the mask metal film 110' is supported by adhesive on the carrier portions 65 and 70. The thickness reduction process (T) (or planarization process) can reduce the thickness by mirror-finishing one surface (lower surface) of the mask metal film 110 and removing part of the mask metal film 110 at the same time. Thickness reduction (T) can be performed by a CMP (Chemical Mechanical Polishing) method, and known CMP methods can be used without limitation. Additionally, the thickness of the mask metal film 110' may be reduced (T) using a chemical wet etching or dry etching method. In addition, a flattening process that thins the mask metal film 110' can be used without limitation.

Since the mask metal film 110' manufactured through the rolling process has a thickness greater than several tens of ㎛, the thickness can be reduced to manufacture a mask with high resolution. In addition, the mask metal film 110' manufactured through the electroplating process may also be subjected to a thickness reduction or planarization process to control surface properties and thickness. As the thickness of the mask metal film 110' is reduced, the mask metal film 110' -> 110 may have a thickness of about 5㎛ to 20㎛.

Since the carrier portions 65 and 70 adhere and support the mask metal film 110', there is an advantage in that the thickness reduction (T) process can be performed stably. Thickness reduction may be performed only on the mask cell (C) area, which is the area where the mask pattern (P) will be formed. Then, in the dummy area other than the mask cell (C) area, the welding area (not shown) is formed relatively thick and the mask pattern (P) is formed. When welding (100) to a frame (not shown), there is an advantage that welding is performed well.

Next, referring to (a3) of FIG. 7, a patterned first insulating portion 31 may be formed on the first surface (lower surface) of the mask metal film 110. Since this is the same as step (a) of FIG. 2, detailed description is omitted.

Meanwhile, before forming the first insulating portion 31, alignment marks AM may be formed on at least part of the dummy areas on both sides, excluding the plurality of mask cell areas of the mask metal film 110. Alignment marks (AM) can be formed on both dummy areas so that they can be removed later in the main mask pattern (P1) forming step (after step (d1) in FIG. 8, corresponding to step (e) in FIG. 4). there is. The alignment mark (AM) separates the mask metal film 110 from the carrier portions 65 and 70 and adheres it to the support substrate 50, forming a main mask pattern (P1) corresponding to the sub mask pattern (P2). It can be used as an alignment reference when forming the second insulating part 41 for. The alignment mark (AM) can also be formed through an etching process like the mask pattern (P) formation process. The alignment mark (AM) may penetrate the mask metal film 110, or may be formed only partially through half-etching.

Next, referring to (b1) of FIG. 7, a sub-mask pattern P2 may be formed on the first surface (lower surface) of the metal film 110. Since this is the same as step (b) of FIG. 2, detailed description is omitted.

Next, referring to (c1) of FIG. 8, the first insulating portion 31 on the first side of the mask metal film 110 may be removed. The sub mask pattern P2 may be exposed on the first side.

Next, referring to (d1) of FIG. 8, a support substrate 50 may be prepared, and the first side of the mask metal film 110 may be adhered to the support substrate 50. This is the same as step (d) in Figure 3. However, the barrier insulating portion 60 may be filled not only in the sub mask pattern P2 but also in the alignment mark AM.

Additionally, the second insulating portion 41 may be formed on a second surface (eg, an upper surface of the mask metal film 110) opposite to the first surface of the mask metal film 110. At this time, the second insulating portion 41 may not be formed on the alignment mark AM. The alignment mark AM may be removed along with the dummy area portion 115 by being exposed to an etchant during etching to form the next main mask pattern P1.

Next, the main mask pattern P1 may be formed on the second surface (upper surface) of the mask metal film 110. The main mask pattern P1 may be formed by etching the space 42 between the patterns of the second insulating part 41 formed on the second surface (upper surface) of the mask metal film 110. This corresponds to (e) of FIG. 4 , and at the same time as the main mask pattern P1 is formed, the dummy area portion 115 where the alignment mark AM is formed can also be removed by etching.

Afterwards, the manufacturing of the mask 100 can be completed through further steps (f) and (g) of Figures 4 and 5.

Meanwhile, the thickness reduction (T) process of the mask metal film 110' as shown in (a2) of FIG. 6 may be performed before forming the main mask pattern P1. Since the thickness reduction (T) is performed on the opposite side of the sub mask pattern (P2) while the sub mask pattern (P2) is formed, it does not affect the main mask pattern (P1). In addition, since the mask metal film 110' is adhesively supported on the support substrate 50 via the barrier insulating portion 60/temporary adhesive portion, there is an advantage in that the thickness reduction (T) process can be performed stably. there is.

As described above, the present invention can apply the etching process of the mask pattern P in both directions while adhesively supporting the mask metal film 110 using the support substrate 60 and the carrier portions 65 and 70. , the mask pattern (P) can be stably formed, and a uniform mask pattern (P) can be implemented for each cell in the large-area mask 100. In addition, there is an effect that the thickness reduction process of the mask metal film 110 can be performed stably.

Although the present invention has been shown and described with reference to preferred embodiments as described above, it is not limited to the above embodiments and may be modified in various ways by those skilled in the art without departing from the spirit of the invention. Transformation and change are possible. Such modifications and variations should be considered to fall within the scope of the present invention and the appended claims.

31, 41: first and second insulating parts
32, 42: Space between the first and second insulating patterns
50: support substrate
60: barrier insulation part
65, 70: Carrier part
100: mask
C: cell, mask cell
DM: dummy, mask dummy
P: mask pattern
P1: Main mask pattern
P2: Sub mask pattern

Claims (11)

A method of manufacturing a mask for forming OLED pixels,
(a) preparing a mask metal film;
(b) forming a carrier portion on the second side of the mask metal film;
(c) forming a patterned first insulating portion on at least a first side of the mask metal film;
(d) forming a sub-mask pattern in the mask metal film through the space between the patterns of the first insulating part on the first side of the mask metal film;
(e) bonding the first side of the mask metal film on which the sub-mask pattern is formed to a support substrate via a barrier insulating part;
(f) separating the carrier portion from the second side of the mask metal film;
(g) manufacturing a mask by forming a main mask pattern on the mask metal film through the space between the patterns of the second insulating part formed on the second surface opposite to the first surface of the mask metal film;
Including,
In step (e), the barrier insulation is filled in the sub-mask pattern exposed on the first side of the mask metal film,
Between steps (b) and (c), forming alignment marks on at least a portion of the dummy areas on both sides excluding the plurality of mask cell areas of the mask metal film,
A method of manufacturing a mask in which the second insulating portion is not formed on the alignment mark, and the alignment mark of the mask metal film is removed in step (g). According to paragraph 1,
(h) separating the mask from the support substrate;
A method for manufacturing a mask, further comprising: delete According to paragraph 1,
In step (d), the sub-mask pattern is formed so as not to penetrate the mask metal film. According to paragraph 1,
A method of manufacturing a mask, wherein the pattern spacing of the first insulating part is smaller than the pattern spacing of the second insulating part. According to paragraph 1,
In step (g), the main mask pattern is formed to penetrate the mask metal film, and the mask pattern is formed by the sum of the main mask pattern and the sub mask pattern. According to paragraph 1,
Between steps (b) and (c), reducing the thickness of the mask metal film on the first side of the mask metal film;
A method of manufacturing a mask further comprising. delete delete delete According to paragraph 1,
A method of manufacturing a mask, wherein the thickness of the mask metal film is reduced on the second side of the mask metal film between steps (f) and (g).

Images