TWI771358B - Manufacturing method of light-emitting diode chip and light-emitting diode chip - Google Patents
Manufacturing method of light-emitting diode chip and light-emitting diode chip Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 91
- 239000013078 crystal Substances 0.000 claims abstract description 8
- 239000004065 semiconductor Substances 0.000 claims abstract description 8
- 238000002360 preparation method Methods 0.000 claims abstract description 6
- 229910052594 sapphire Inorganic materials 0.000 claims description 11
- 239000010980 sapphire Substances 0.000 claims description 11
- 239000005304 optical glass Substances 0.000 claims description 4
- 239000011347 resin Substances 0.000 claims description 4
- 229920005989 resin Polymers 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 3
- 239000000853 adhesive Substances 0.000 claims description 2
- 230000001070 adhesive effect Effects 0.000 claims description 2
- 238000000034 method Methods 0.000 claims 4
- 235000012431 wafers Nutrition 0.000 abstract description 76
- 238000005520 cutting process Methods 0.000 description 24
- 230000003287 optical effect Effects 0.000 description 8
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 5
- 238000001816 cooling Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000002173 cutting fluid Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000005323 electroforming Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
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Abstract
[課題]提供一種能夠得到充分的亮度的發光二極體晶片的製造方法及發光二極體晶片。 [解決手段]一種發光二極體晶片的製造方法,其特徵在於具備有:晶圓準備步驟,準備晶圓,該晶圓是在結晶成長用之透明基板上具有積層體層,並於該積層體層的正面以相互交叉之複數條分割預定線所區劃出之各區域中各自形成有LED電路,該積層體層形成有包含發光層的複數層半導體層;第1透明基板貼附步驟,將第1透明基板的正面貼附到晶圓的背面以形成第1一體化晶圓;第2透明基板貼附步驟,已實施該第1透明基板貼附步驟之後,將第2透明基板的正面貼附到該第1透明基板的背面以形成第2一體化晶圓,其中該第2透明基板於內部形成有複數個氣泡;及分割步驟,沿著該分割預定線將該晶圓和該第1及第2透明基板一起切斷,以將該第2一體化晶圓分割成一個個的發光二極體晶片。[Subject] To provide a method for producing a light emitting diode wafer and a light emitting diode wafer capable of obtaining sufficient brightness. [Solution] A method of manufacturing a light-emitting diode wafer, comprising: a wafer preparation step of preparing a wafer having a laminate layer on a transparent substrate for crystal growth, and the laminate layer is LED circuits are formed in each area demarcated by a plurality of predetermined dividing lines crossing each other on the front surface of the LED, and a plurality of semiconductor layers including a light-emitting layer are formed on the laminated body layer; the first transparent substrate attaching step is to attach the first transparent substrate. The front side of the substrate is attached to the back side of the wafer to form a first integrated wafer; the second transparent substrate attaching step, after the first transparent substrate attaching step has been performed, the front side of the second transparent substrate is attached to the the backside of the first transparent substrate to form a second integrated wafer, wherein a plurality of air bubbles are formed in the second transparent substrate; and a dividing step, the wafer and the first and second The transparent substrate is cut together to divide the second integrated wafer into individual light-emitting diode wafers.
Description
本發明是有關於一種發光二極體晶片的製造方法及發光二極體晶片。 The present invention relates to a manufacturing method of a light-emitting diode wafer and the light-emitting diode wafer.
在藍寶石基板、GaN基板、SiC基板等的結晶成長用基板的正面上形成有將n型半導體層、發光層、p型半導體層積層複數層而成的積層體層,並且在此積層體層上藉由交叉的複數條分割預定線所區劃出的區域中形成有複數個LED(發光二極體(Light Emitting Diode))等之發光元件的晶圓,是沿著分割預定線切斷而分割成一個個的發光元件晶片,已分割的發光元件晶片可廣泛地應用在手機、個人電腦、照明機器等的各種電氣機器上。 On the front surface of a substrate for crystal growth such as a sapphire substrate, a GaN substrate, and a SiC substrate, a laminate layer formed by laminating a plurality of layers of an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer is formed. A wafer in which a plurality of light-emitting elements such as LEDs (Light Emitting Diodes) are formed in an area demarcated by a plurality of intersecting planned dividing lines is cut along the planned dividing lines and divided into individual pieces. The divided light-emitting element wafers can be widely used in various electrical equipment such as mobile phones, personal computers, and lighting equipment.
由於從發光元件晶片的發光層射出的光具有各向同性,所以即使被照射到結晶成長用基板的內部也會使光從基板的背面及側面射出。然而,由於已被照射到基板之內部的光之中在與空氣層之間的界面上的入射角為臨界角以上的光會在界面上進行全反射而被封閉在基板內部,並不會有從基板射出到外部之情形,所以會有導致發光元件晶片的亮度降低的問題。 Since the light emitted from the light emitting layer of the light emitting element wafer is isotropic, even if it is irradiated into the inside of the substrate for crystal growth, the light is emitted from the back surface and the side surface of the substrate. However, among the light irradiated inside the substrate, light whose incident angle on the interface with the air layer is greater than or equal to the critical angle is totally reflected at the interface and enclosed inside the substrate, and there is no When it is emitted from the substrate to the outside, there is a problem that the brightness of the light-emitting element wafer is lowered.
為了解決此問題,在日本專利特開2014-175354號公報中已記載有下述之發光二極體(LED):為了抑制從發光層射出的光被封閉在基板的內部,而形成為在基板的背面貼附透明構件來謀求亮度的提升。 In order to solve this problem, Japanese Patent Laid-Open No. 2014-175354 discloses a light emitting diode (LED) which is formed on the substrate in order to prevent the light emitted from the light emitting layer from being trapped inside the substrate. A transparent member is attached to the back to improve the brightness.
專利文獻1:日本專利特開2014-175354號公報 Patent Document 1: Japanese Patent Laid-Open No. 2014-175354
然而,在專利文獻1所揭示的發光二極體中,雖然可藉由在基板的背面貼附透明構件而使亮度稍微提升,但是仍有無法得到充分的亮度的問題。 However, in the light-emitting diode disclosed in Patent Document 1, although the brightness can be slightly improved by attaching a transparent member to the back surface of the substrate, there is still a problem that sufficient brightness cannot be obtained.
本發明是有鑒於像這樣的點而作成的發明,其目的在於提供一種能夠得到充分的亮度的發光二極體晶片的製造方法及發光二極體晶片。 The present invention has been made in view of such a point, and an object of the present invention is to provide a method for producing a light-emitting diode wafer and a light-emitting diode wafer capable of obtaining sufficient brightness.
依據請求項1記載的發明,可提供一種發光二極體晶片的製造方法,該發光二極體晶片的製造方法之特徵在於具備有:晶圓準備步驟,準備晶圓,該晶圓是在結晶成長用之透明基板上具有積層體層,並於該積層體層的正面以相互 交叉之複數條分割預定線所區劃出之各區域中各自形成有LED電路,該積層體層形成有包含發光層的複數層半導體層;第1透明基板貼附步驟,將第1透明基板的正面貼附到晶圓的背面以形成第1一體化晶圓;第2透明基板貼附步驟,已實施該第1透明基板貼附步驟之後,將第2透明基板的正面貼附到該第1透明基板的背面以形成第2一體化晶圓,其中該第2透明基板於內部形成有複數個氣泡;及分割步驟,沿著該分割預定線將該晶圓和該第1及第2透明基板一起切斷,以將該第2一體化晶圓分割成一個個的發光二極體晶片。 According to the invention described in claim 1, there can be provided a method of manufacturing a light-emitting diode chip, the method of manufacturing a light-emitting diode chip comprising: a wafer preparation step of preparing a wafer, the wafer being crystallized The transparent substrate for growth has a laminated body layer, and the front surface of the laminated body layer is mutually LED circuits are respectively formed in each area demarcated by a plurality of intersecting predetermined dividing lines, and a plurality of semiconductor layers including a light-emitting layer are formed on the laminated body layer; the first transparent substrate attaching step is to attach the front surface of the first transparent substrate. attached to the back of the wafer to form a first integrated wafer; a second transparent substrate attaching step, after the first transparent substrate attaching step has been performed, attaching the front surface of the second transparent substrate to the first transparent substrate the back surface to form a second integrated wafer, wherein the second transparent substrate has a plurality of air bubbles formed therein; and a dividing step, cutting the wafer together with the first and second transparent substrates along the planned dividing line The second integrated wafer is divided into individual light-emitting diode chips.
較理想的是,該第1及第2透明基板是以透明陶瓷、光學玻璃、藍寶石、透明樹脂的任一種所形成,並且該第1及該第2透明基板貼附步驟是使用透明接著劑來實施。 Preferably, the first and second transparent substrates are formed of any one of transparent ceramics, optical glass, sapphire, and transparent resin, and the first and second transparent substrate attaching steps are performed using a transparent adhesive. implement.
依據請求項4記載的發明,可提供一種發光二極體晶片,該發光二極體晶片的特徵在於具備有:於正面形成有LED電路的發光二極體、將正面貼附在該發光二極體之背面的第1透明構件、及將正面貼附在該第1透明構件的背面且於內部具有複數個氣泡的第2透明構件。 According to the invention described in claim 4, a light-emitting diode chip can be provided, the light-emitting diode chip is characterized by comprising: a light-emitting diode having an LED circuit formed on the front surface; The 1st transparent member of the back surface of a body, and the 2nd transparent member which attached the front surface to the back surface of this 1st transparent member, and has a some bubble inside.
由於本發明的發光二極體晶片是將第1透明構件的正面貼附在LED的背面,且將於內部具有複數個氣 泡的第2透明構件的正面貼附在第1透明構件的背面,所以會使光在第1及第2透明構件內複雜地折射而使被封閉在第1及第2透明構件內的光減少,且讓從第1及第2透明構件射出之光的量增大並使發光二極體晶片的亮度提升。 Since the light-emitting diode chip of the present invention attaches the front surface of the first transparent member to the back surface of the LED, and will have a plurality of gas inside The front surface of the second transparent member of the bubble is attached to the back surface of the first transparent member, so the light is refracted in a complicated manner in the first and second transparent members, and the light enclosed in the first and second transparent members is reduced. , and the amount of light emitted from the first and second transparent members is increased to improve the brightness of the light-emitting diode chip.
10:切削單元 10: Cutting unit
11:光元件晶圓(晶圓) 11: Optical element wafer (wafer)
11a、21a:正面 11a, 21a: Front
11b:背面 11b: Back
12:主軸殼體 12: Spindle housing
13:藍寶石基板 13: Sapphire substrate
13A:LED 13A: LED
14:切削刀 14: Cutter
15:積層體層(晶膜層) 15: Laminated body layer (crystal film layer)
16:刀片罩 16: Blade cover
17:分割預定線 17: Divide the scheduled line
18:冷卻噴嘴 18: Cooling Nozzles
19:LED電路 19: LED circuit
20:工作夾台 20: Work clamp table
21:第1透明基板 21: The first transparent substrate
21A:第2透明基板 21A: Second transparent substrate
21’:第1透明構件 21': 1st transparent member
21A’:第2透明構件 21A': 2nd transparent member
25:第1一體化晶圓 25: 1st integrated wafer
25A:第2一體化晶圓 25A: 2nd integrated wafer
27:切斷溝 27: Cut off the ditch
29:氣泡 29: Bubbles
31:發光二極體晶片 31: LED chip
R、X1:箭頭 R, X1: arrow
T:切割膠帶 T: cutting tape
F:環狀框架 F: Ring frame
X、Y、Z:方向 X, Y, Z: direction
圖1是光元件晶圓的正面側立體圖。 FIG. 1 is a front perspective view of an optical element wafer.
圖2(A)是顯示將第1透明基板的正面貼附到晶圓的背面而進行一體化之第1透明基板貼附步驟的立體圖,圖2(B)是第1一體化晶圓的立體圖。 FIG. 2(A) is a perspective view showing a first transparent substrate attaching step in which the front surface of the first transparent substrate is attached to the back surface of the wafer for integration, and FIG. 2(B) is a perspective view of the first integrated wafer .
圖3(A)是顯示將第2透明基板的正面貼附到第1一體化晶圓之第1透明基板的背面而進行一體化之第2透明基板貼附步驟的立體圖,圖3(B)是第2一體化晶圓的立體圖。 3(A) is a perspective view showing a second transparent substrate attaching step of integrating the front surface of the second transparent substrate to the back surface of the first transparent substrate of the first integrated wafer, and FIG. 3(B) It is a perspective view of the second integrated wafer.
圖4是顯示透過切割膠帶而以環狀框架支撐第2一體化晶圓的支撐步驟的立體圖。 4 is a perspective view showing a supporting step of supporting the second integrated wafer by the annular frame through the dicing tape.
圖5是顯示將第2一體化晶圓分割成發光二極體晶片的分割步驟的立體圖。 FIG. 5 is a perspective view showing a dividing step of dividing the second integrated wafer into light-emitting diode wafers.
圖6是分割步驟結束後之第2一體化晶圓的立體圖。 FIG. 6 is a perspective view of the second integrated wafer after the dividing step is completed.
圖7是本發明實施形態之發光二極體晶片的立體圖。 7 is a perspective view of a light-emitting diode wafer according to an embodiment of the present invention.
以下,參照圖式詳細地說明本發明的實施形態。參照圖1,所示為光元件晶圓(以下,有時會簡稱為晶圓)11的正面側立體圖。 Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Referring to FIG. 1 , there is shown a front perspective view of an optical element wafer (hereinafter, sometimes simply referred to as a wafer) 11 .
光元件晶圓11是在藍寶石基板13上積層氮
化鎵(GaN)等的晶膜層(epitaxial layer)(積層體層)15而構成的。光元件晶圓11具有積層有晶膜層15的正面11a、及露出了藍寶石基板13的背面11b。
The
在此,在本實施形態的光元件晶圓11中,雖然是採用藍寶石基板13作為結晶成長用基板,但是也可以採用GaN基板或SiC基板等來替代藍寶石基板13。
Here, in the optical element wafer 11 of the present embodiment, although the
積層體層(晶膜層)15是藉由依序使電子成為多數載子(carrier)的n型半導體層(例如n型GaN層)、成為發光層的半導體層(例如InGaN層)、電洞成為多數載子的p型半導體層(例如p型GaN層)進行晶膜生長而形成。 The laminated body layer (crystal film layer) 15 is formed by an n-type semiconductor layer (for example, an n-type GaN layer) in which electrons become a majority carrier, a semiconductor layer (for example, an InGaN layer) serving as a light-emitting layer, and a majority of holes in this order. A p-type semiconductor layer (eg, a p-type GaN layer) of carriers is formed by crystal film growth.
藍寶石基板13具有例如100μm的厚度,且積層體層15具有例如5μm的厚度。於積層體層15上以形成為格子狀的複數條分割預定線17來區劃而形成有複數個LED電路19。晶圓11具有形成有LED電路19的正面11a、和露出了藍寶石基板13的背面11b。
The
依據本發明實施形態的發光二極體晶片的製造方法,首先會實施準備如圖1所示的光元件晶圓11的晶圓準備步驟。此外,還實施準備第1及第2透明基板的透明基板準備步驟。
According to the manufacturing method of the light emitting diode wafer according to the embodiment of the present invention, a wafer preparation step of preparing the
實施透明基板準備步驟之後,實施第1透明基板貼附步驟,該第1透明基板貼附步驟是如圖2(A)所示,將第1透明基板21的正面21a貼附到晶圓11的背面11b。圖2(B)是第1一體化晶圓25的立體圖。
After the transparent substrate preparation step is performed, a first transparent substrate attaching step is performed, which is to attach the
第1透明基板21是由透明樹脂、光學玻璃、
藍寶石、透明陶瓷的任一種所形成。在本實施形態中,是由比光學玻璃更有耐久性之聚碳酸酯、丙烯酸樹脂等之透明樹脂來形成第1及第2透明基板。
The first
已實施第1透明基板貼附步驟之後,如圖3(A)所示,將於內部形成有複數個氣泡29的第2透明基板21A的正面21a貼附到第1一體化晶圓25的第1透明基板21的背面(第2透明基板貼附步驟),以形成如圖3(B)所示的第2一體化晶圓25A。第2透明基板21A的材質也是與上述之第1透明基板21的材質同樣。
After the first transparent substrate attaching step has been performed, as shown in FIG. 1. The back surface of the transparent substrate 21 (second transparent substrate attaching step) to form the second
取代上述之第1透明基板貼附步驟及第2透明基板貼附步驟,而設成:於將第2透明基板21A的正面貼附在第1透明基板21的背面來形成一體化後,再將晶圓11的背面11b貼附到第1透明基板21的正面21a亦可。
Instead of the first transparent substrate attaching step and the second transparent substrate attaching step described above, the front surface of the second
已實施第2透明基板貼附步驟後,實施支撐步驟,該支撐步驟是如圖4所示,將第2一體化晶圓25A的第2透明基板21A貼附到外周部已貼附於環狀框架F上之切割膠帶T來形成框架單元,並透過切割膠帶T以環狀框架F支撐第2一體化晶圓25A。
After the second transparent substrate attaching step has been performed, a supporting step is performed. As shown in FIG. 4 , the second
已實施支撐步驟之後,實施分割步驟,該分割步驟是將框架單元投入切削裝置,並且利用切削裝置來將第2一體化晶圓25A切削以分割成一個個的發光二極體晶片。參照圖5來說明此分割步驟。
After the supporting step has been performed, a dividing step is performed in which the frame unit is put into a cutting device and the second
此分割步驟是使用例如已廣為周知的切削裝置來實施。如圖5所示,切削裝置的切削單元10包含有
主軸殼體12、可旋轉地插入主軸殼體12中的圖未示的主軸、和裝設在主軸的前端的切削刀14。
This dividing step is carried out using, for example, a well-known cutting device. As shown in FIG. 5, the cutting
切削刀14的切割刃是以例如用鍍鎳方式來將鑽石磨粒固定而成的電鑄磨石所形成,且其前端形狀是做成三角形、四角形、或半圓形。
The cutting edge of the
切削刀14的大致上半部分是被刀片罩(blade cover)(輪罩(wheel cover))16所覆蓋,在刀片罩16上配設有於切削刀14的裏側及近前側水平地伸長的一對(圖中僅顯示1支)冷卻噴嘴18。
A substantially upper half of the
在分割步驟中,是隔著框架單元的切割膠帶T而在切削裝置的工作夾台20上吸引保持第2一體化晶圓25A,且環狀框架F是以圖未示的夾具夾持來固定。
In the dividing step, the second
然後,使切削刀14一邊朝箭頭R方向高速旋轉一邊切入晶圓11的分割預定線17直到切削刀14的前端到達切割膠帶T為止,並且一邊從冷卻噴嘴18朝向切削刀14及晶圓11的加工點供給切削液一邊將第2一體化晶圓25A朝箭頭X1方向加工進給,藉此形成沿著晶圓11的分割預定線17切斷晶圓11以及第1及第2透明基板21、21A的切斷溝27。
Then, the
將切削單元10在Y軸方向上分度進給,並且沿著朝第1方向伸長的分割預定線17逐次地形成同樣的切斷溝27。其次,將工作夾台20旋轉90°之後,沿著於與第1方向正交的第2方向上伸長之全部的分割預定線17形成同樣的切斷溝27,以形成圖6所示之狀態,藉此將第2一體化
晶圓25A分割成如圖7所示的發光二極體晶片31。
The cutting
在上述之實施形態中,雖然在將第2一體化晶圓25A分割成一個個的發光二極體晶片31上是使用切削裝置,但是也可以設成:將對晶圓11及透明基板21、21A具有穿透性之波長的雷射光束沿著分割預定線17朝晶圓11照射,並且在晶圓11以及第1透明基板21及第2透明基板21A的內部於厚度方向上形成複數層的改質層,接著,對第2一體化晶圓25A賦與外力,來以改質層為分割起點將第2一體化晶圓25A分割成一個個的發光二極體晶片31。
In the above-mentioned embodiment, although the cutting device is used for the light-emitting
圖7所示的發光二極體晶片31是在正面具有LED電路19之LED 13A的背面貼附有第1透明構件21’。此外,在第1透明構件21’的背面貼附有於內部具有複數個氣泡29的第2透明構件21A’。
In the light-emitting
從而,在圖7所示之發光二極體晶片31上,除了第1及第2透明構件21’、21A’的表面積增大之外,也使光在第1及第2透明構件內21’、21A’複雜地折射,以使被封閉在透明構件內之光減少,而使從透明構件21’、21A’射出之光的量增大,並使發光二極體晶片31的亮度提升。
Therefore, in the light-emitting
11‧‧‧光元件晶圓(晶圓) 11‧‧‧Optical component wafer (wafer)
11a、21a‧‧‧正面 11a, 21a‧‧‧Front
21‧‧‧第1透明基板 21‧‧‧First transparent substrate
21A‧‧‧第2透明基板 21A‧‧‧Second transparent substrate
25‧‧‧第1一體化晶圓 25‧‧‧First integrated wafer
25A‧‧‧第2一體化晶圓 25A‧‧‧Second integrated wafer
29‧‧‧氣泡 29‧‧‧Bubble
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