CN110544739A - Flip red light chip and manufacturing method thereof - Google Patents
Flip red light chip and manufacturing method thereof Download PDFInfo
- Publication number
- CN110544739A CN110544739A CN201910822393.7A CN201910822393A CN110544739A CN 110544739 A CN110544739 A CN 110544739A CN 201910822393 A CN201910822393 A CN 201910822393A CN 110544739 A CN110544739 A CN 110544739A
- Authority
- CN
- China
- Prior art keywords
- red light
- chip
- flip
- glue
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 239000003292 glue Substances 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 239000011521 glass Substances 0.000 claims abstract description 13
- 239000004642 Polyimide Substances 0.000 claims abstract description 6
- 229920001721 polyimide Polymers 0.000 claims abstract description 6
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 6
- 239000010980 sapphire Substances 0.000 claims abstract description 6
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 11
- 239000000853 adhesive Substances 0.000 claims description 5
- 230000001070 adhesive effect Effects 0.000 claims description 5
- 239000002904 solvent Substances 0.000 abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention belongs to the technical field of chips and discloses a flip red light chip and a manufacturing method thereof. Mechanically scribing a red light series epitaxial wafer from a P surface, scribing a groove with the width of 10-200 microns and the depth of 20-200 microns, and dividing the red light epitaxial wafer into squares with the length and the width of 10-2 mm; bonding transparent substrate such as glass sheet and sapphire with transparent inorganic glue such as silica sol or high temperature resistant transparent glue such as polyimide glue; and manufacturing a P electrode and an N electrode to form a red light series flip chip. The transparent high-temperature-resistant glue is generally provided with a solvent, and the groove mainly plays a role in providing a release channel for the solvent so as to firmly adhere the epitaxial wafer and the transparent substrate together.
Description
Technical Field
The invention belongs to the technical field of chips, and particularly relates to a flip red light chip and a manufacturing method thereof.
Background
Currently, the current state of the art commonly used in the industry is such that:
this technology has been used in the IC industry as early as the 60 th century, and controlled collapse chip bonding was the most important form of flip chip application in the 60 th century by IBM corporation of America until the end of the 80 th century, where flip chips were assembled onto silicon or ceramic substrates. Because the thermal expansion coefficients of the semiconductor and the substrate are not matched, the thermal fatigue life of a welding spot connected with the silicon controlled chip is short, and the welding spot has great impact on the bonding of the chip and the bottom substrate. How to reduce the difference of thermal expansion coefficients between the substrate and the silicon chip becomes a difficult problem to be overcome. In 1987, Hitachi, Japan, matched the thermal expansion coefficient of the solder joint by filling resin (i.e., underfill), and increased the thermal fatigue life of the solder joint. In recent years, the flip chip technology is gradually applied to the LED industry, and compared with a forward chip, the flip chip product of the LED has the characteristics of low voltage, high brightness, high reliability, high saturation current density and the like, and has a good development prospect. The existing red and yellow light LED flip chip has low yield, mainly lacks of a proper manufacturing method, so that an epitaxial wafer and a transparent substrate cannot be well adhered together, the epitaxial wafer and the transparent substrate are easy to separate, or a high-pressure hard-pressing bonding process which is easy to crush the epitaxial wafer is adopted, and the process is easy to damage the chip.
In summary, the problems of the prior art are as follows:
the existing red LED flip chip has no proper manufacturing process, so that the epitaxial wafer and the transparent substrate are not firmly bonded, and the epitaxial wafer and the transparent substrate are easily separated, or the chip is easily crushed by a hard pressing process although the epitaxial wafer and the substrate are firmly bonded.
Disclosure of Invention
Aiming at the problems in the prior art, the invention provides a flip red light chip and a manufacturing method thereof.
the invention is realized in such a way that a flip red light chip is provided with:
A glass sheet;
The glass sheet is connected with the P layer through the adhesive glue.
further, the P layer is provided with a P electrode.
furthermore, a quantum well is arranged below the P layer, an N layer is arranged below the quantum well, and an N electrode is arranged on the N layer.
Another object of the present invention is to provide a method for manufacturing a red light chip, which includes the following steps:
Mechanically scribing a red light series epitaxial wafer from a P surface, scribing a groove with the width of 10-200 microns and the depth of 20-200 microns, and dividing the red light epitaxial wafer into squares with the length and the width of 10-2 mm;
Secondly, adhering the P surface of the epitaxial layer and a transparent substrate such as a glass sheet, sapphire and the like together by using transparent inorganic glue such as silica sol or high-temperature-resistant transparent glue such as polyimide glue;
And step three, manufacturing a P electrode and an N electrode to form a red light series flip chip.
In summary, the advantages and positive effects of the invention are:
The invention provides a release channel for the solvent by forming a proper groove on the P surface of the epitaxial wafer through processes of scribing and the like, so that the epitaxial wafer and the transparent substrate can be firmly adhered together.
Drawings
Fig. 1 is a schematic structural diagram of a flip red chip according to an embodiment of the present invention.
FIG. 2 is a diagram illustrating a process for manufacturing a flip-chip package according to an embodiment of the present invention.
FIG. 3 is a flowchart of a method for fabricating a flip chip.
In the figure: 1. a glass sheet; 2. bonding glue; 3. a P layer; 4. a quantum well; 5. a P electrode; 6. an N electrode; 7. and N layers.
Detailed Description
In order to further understand the contents, features and effects of the present invention, the following embodiments are illustrated and described in detail with reference to the accompanying drawings.
The structure of the present invention will be described in detail below with reference to the accompanying drawings.
As shown in fig. 1, the flip red chip provided by the embodiment of the present invention includes: glass sheet 1, adhesive 2, P layer 3, quantum well 4, P electrode 5, N electrode 6 and N layer 7.
The glass sheet 1 is connected with the P layer 3 through the adhesive 2; a proper groove is formed on the P layer 3 of the epitaxial wafer, and a P electrode 5 is adhered on the P layer 3; a quantum well 4 is arranged below the P layer 3, an N layer 7 is arranged below the quantum well 4, and an N electrode 6 is arranged on the N layer 7.
As a preferred embodiment of the invention, grooves 10 to 200 microns wide and 20 to 200 microns deep are scribed from above the P layer 3.
as a preferred embodiment of the invention, the red light epitaxial wafer is divided into blocks with the length and width of 10 microns-2 mm.
As a preferred embodiment of the present invention, the adhesive 2 is a transparent inorganic glue such as silica sol, or a transparent glue resistant to high temperature such as polyimide glue.
In a preferred embodiment of the present invention, the glass sheet 1 is a transparent substrate, and the transparent substrate may be a transparent substrate such as sapphire.
As shown in fig. 3, the method for manufacturing a flip red chip according to the embodiment of the present invention specifically includes the following steps:
step one, mechanically scribing the red light series epitaxial wafer from the P surface, scribing a groove with the width of 10-200 microns and the depth of 20-200 microns, and dividing the red light epitaxial wafer into squares with the length and the width of 10-2 mm.
And secondly, adhering transparent inorganic glue such as silica sol or high-temperature-resistant transparent glue such as polyimide glue with a transparent substrate such as a glass sheet, sapphire and the like.
And step three, manufacturing a P electrode and an N electrode to form a red light series flip chip.
Mechanically scribing a red light series epitaxial wafer from a P surface, scribing a groove with the width of 10-200 microns and the depth of 20-200 microns, and dividing the red light epitaxial wafer into squares with the length and the width of 10-2 mm; bonding transparent substrate such as glass sheet and sapphire with transparent inorganic glue such as silica sol or high temperature resistant transparent glue such as polyimide glue; and manufacturing a P electrode and an N electrode to form a red light series flip chip, wherein the process is shown in figure 2.
The above description is only for the preferred embodiment of the present invention, and is not intended to limit the present invention in any way, and all simple modifications, equivalent changes and modifications made to the above embodiment according to the technical spirit of the present invention are within the scope of the technical solution of the present invention.
Claims (4)
1. The utility model provides a flip-chip red light chip which characterized in that, flip-chip red light chip be provided with:
a glass sheet;
the glass sheet is connected with the P layer through the adhesive glue.
2. The flip-chip red light chip of claim 1 wherein the P layer has a P electrode.
3. The flip-chip red light chip of claim 1 wherein the P layer has a quantum well thereunder, the quantum well has an N layer thereunder, and the N layer has an N electrode.
4. the method for manufacturing the flip red chip according to claim 1, wherein the method specifically comprises the following steps:
Mechanically scribing a red light series epitaxial wafer from a P surface, scribing a groove with the width of 10-200 microns and the depth of 20-200 microns, and dividing the red light epitaxial wafer into squares with the length and the width of 10-2 mm;
Secondly, adhering transparent inorganic glue such as silica sol or high-temperature-resistant transparent glue such as polyimide glue with a transparent substrate such as a glass sheet, sapphire and the like;
and step three, manufacturing a P electrode and an N electrode to form a red light series flip chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910822393.7A CN110544739A (en) | 2019-09-02 | 2019-09-02 | Flip red light chip and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910822393.7A CN110544739A (en) | 2019-09-02 | 2019-09-02 | Flip red light chip and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110544739A true CN110544739A (en) | 2019-12-06 |
Family
ID=68711254
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910822393.7A Pending CN110544739A (en) | 2019-09-02 | 2019-09-02 | Flip red light chip and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110544739A (en) |
Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5162359A (en) * | 1974-11-28 | 1976-05-29 | Tokyo Shibaura Electric Co | Denkisoshino toritsukehoho |
| US20030047737A1 (en) * | 2001-09-13 | 2003-03-13 | Jin-Ywan Lin | Light emitting diode and method for manufacturing the same |
| CN102157629A (en) * | 2010-12-24 | 2011-08-17 | 长治虹源科技晶体有限公司 | Method for manufacturing graphical sapphire substrate |
| CN102354723A (en) * | 2011-10-24 | 2012-02-15 | 南昌黄绿照明有限公司 | Flip semiconductor luminescent device and manufacturing method thereof |
| CN103325883A (en) * | 2012-03-20 | 2013-09-25 | 英特赛尔美国有限公司 | Enhanced lift-off techniques for use with dielectric optical coatings and light sensors produced therefrom |
| CN103531690A (en) * | 2012-07-03 | 2014-01-22 | 上海微电子装备有限公司 | Led chip and preparation method thereof |
| JP2016023266A (en) * | 2014-07-23 | 2016-02-08 | 積水化学工業株式会社 | Thermosetting adhesive for inkjet, method of manufacturing semiconductor device, and electronic component |
| CN105826272A (en) * | 2015-01-09 | 2016-08-03 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor device and forming method thereof |
| CN106206862A (en) * | 2015-05-27 | 2016-12-07 | 三星电子株式会社 | Light emitting semiconductor device |
| CN207320121U (en) * | 2017-10-31 | 2018-05-04 | 合肥鑫晟光电科技有限公司 | Display base plate and display panel |
| CN108400226A (en) * | 2017-02-06 | 2018-08-14 | 株式会社迪思科 | The manufacturing method and light-emitting diode chip for backlight unit of light-emitting diode chip for backlight unit |
| CN109273423A (en) * | 2018-08-22 | 2019-01-25 | 宁波天炬光电科技有限公司 | Chip structure, wafer-level package enhancing structure and method |
| CN109285788A (en) * | 2018-10-11 | 2019-01-29 | 深圳市修颐投资发展合伙企业（有限合伙） | The pasting method of screen printing brush coating |
-
2019
- 2019-09-02 CN CN201910822393.7A patent/CN110544739A/en active Pending
Patent Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5162359A (en) * | 1974-11-28 | 1976-05-29 | Tokyo Shibaura Electric Co | Denkisoshino toritsukehoho |
| US20030047737A1 (en) * | 2001-09-13 | 2003-03-13 | Jin-Ywan Lin | Light emitting diode and method for manufacturing the same |
| CN102157629A (en) * | 2010-12-24 | 2011-08-17 | 长治虹源科技晶体有限公司 | Method for manufacturing graphical sapphire substrate |
| CN102354723A (en) * | 2011-10-24 | 2012-02-15 | 南昌黄绿照明有限公司 | Flip semiconductor luminescent device and manufacturing method thereof |
| CN103325883A (en) * | 2012-03-20 | 2013-09-25 | 英特赛尔美国有限公司 | Enhanced lift-off techniques for use with dielectric optical coatings and light sensors produced therefrom |
| CN103531690A (en) * | 2012-07-03 | 2014-01-22 | 上海微电子装备有限公司 | Led chip and preparation method thereof |
| JP2016023266A (en) * | 2014-07-23 | 2016-02-08 | 積水化学工業株式会社 | Thermosetting adhesive for inkjet, method of manufacturing semiconductor device, and electronic component |
| CN105826272A (en) * | 2015-01-09 | 2016-08-03 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor device and forming method thereof |
| CN106206862A (en) * | 2015-05-27 | 2016-12-07 | 三星电子株式会社 | Light emitting semiconductor device |
| CN108400226A (en) * | 2017-02-06 | 2018-08-14 | 株式会社迪思科 | The manufacturing method and light-emitting diode chip for backlight unit of light-emitting diode chip for backlight unit |
| CN207320121U (en) * | 2017-10-31 | 2018-05-04 | 合肥鑫晟光电科技有限公司 | Display base plate and display panel |
| CN109273423A (en) * | 2018-08-22 | 2019-01-25 | 宁波天炬光电科技有限公司 | Chip structure, wafer-level package enhancing structure and method |
| CN109285788A (en) * | 2018-10-11 | 2019-01-29 | 深圳市修颐投资发展合伙企业（有限合伙） | The pasting method of screen printing brush coating |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7843074B2 (en) | Underfill for light emitting device | |
| JP4979299B2 (en) | Optical device and manufacturing method thereof | |
| USRE42422E1 (en) | Light emitting diode having a transparent substrate | |
| CN103199187B (en) | A kind of LED encapsulation substrate and encapsulating structure and preparation method thereof | |
| JP4905069B2 (en) | Light emitting device and manufacturing method thereof | |
| EP3806168B1 (en) | Light-emitting component | |
| US20100327465A1 (en) | Package process and package structure | |
| US9431579B2 (en) | Semiconductor light emitting structure and semiconductor package structure | |
| WO2021063035A1 (en) | Micro light-emitting diode chip and display panel | |
| CN101150156A (en) | Lighting component and its making method | |
| US20130248916A1 (en) | Solid-state device and method of manufacturing the same | |
| CN111430522A (en) | L ED chip, L ED display screen module and manufacturing method | |
| KR102486735B1 (en) | Micro LED Package and Method for Manufacturing Thereof | |
| JP5350970B2 (en) | Method for manufacturing light emitting device | |
| CN101521251A (en) | Manufacturing method of light-emitting diode (LED) with vertical structure | |
| US20110140137A1 (en) | Led device and method of manufacturing the same | |
| CN110544739A (en) | Flip red light chip and manufacturing method thereof | |
| JP2010267813A (en) | Light emitting device, and method for manufacturing the same | |
| KR102041270B1 (en) | Method for Manufacturing Micro LED Chips and Packages | |
| CN103346234A (en) | LED packaging structure and packaging method thereof | |
| TWI557953B (en) | Flip-chip packaging structure of light emitting diode and a method of manufacturing the same | |
| CN114864622A (en) | Mini & Micro-LED bulk transfer method | |
| TWI747418B (en) | Magnetic light-emitting structure and manufacturing method of magnetic light-emitting element | |
| CN101488553A (en) | Silica gel protected LED chip and manufacturing method thereof | |
| CN207116465U (en) | A kind of easily encapsulation easy heat radiation upside-down mounting high voltage LED chip |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20191206 |
|
| RJ01 | Rejection of invention patent application after publication |