CN102157629A - Method for manufacturing graphical sapphire substrate - Google Patents
Method for manufacturing graphical sapphire substrate Download PDFInfo
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- CN102157629A CN102157629A CN 201010604424 CN201010604424A CN102157629A CN 102157629 A CN102157629 A CN 102157629A CN 201010604424 CN201010604424 CN 201010604424 CN 201010604424 A CN201010604424 A CN 201010604424A CN 102157629 A CN102157629 A CN 102157629A
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Abstract
The invention relates to a method for manufacturing a graphical sapphire substrate. The method comprises the following steps of: performing spin-coating treatment on a substrate to be photoetched; aligning and installing a mask plate and the substrate and installing the mask plate above the substrate according to set distance; performing projection exposure according to preset exposure conditions; performing developing treatment on the exposed substrate; performing roasting treatment on the developed substrate, and taking photoresist on the surface of the substrate as an etching mask; after setting the temperature and the vacuum degree of an etching cavity, the temperature of a shield cover and the control temperature of a cooling circulation mechanism, placing the roasted substrate on a slide glass base station in the etching cavity; introducing an etching gas for etching the substrate; controlling etching speed and quality by anode radio frequency source power and bias radio frequency source power; and simultaneously, cooling the slide glass base station by using the cooling circulation mechanism. By the method, the graphical substrate production efficiency is high and the luminous efficiency of a chip produced by using the substrate is high and stable.
Description
Technical field
The present invention relates to Sapphire Substrate and make the field, more particularly, relate to a kind of manufacture method of graphic sapphire substrate.
Background technology
In order to improve the luminous intensity of LED illumination, to improve the LED photoelectric conversion efficiency exactly, the photoelectric conversion efficiency of LED comprises two parts: internal quantum efficiency and external quantum efficiency, internal quantum efficiency are meant the efficient of electron hole pair at the compound generation photon in LED interface; External quantum efficiency refers to the photon that the LED interface produces is drawn gross efficiency behind the LED.The Sapphire Substrate that is used at present growing for GaN is the C-Plane sapphire substrate mostly, and this mainly is that it is stable to build brilliant technology maturation at the C face because sapphire crystal is relatively low along technical maturity, the cost of the growth of C axle, physical and chemical performance is stable.But the G a N film of growing on the C surface sapphire substrate is the growth of c direction of principal axis along its polar axis, film has spontaneous polarization and piezoelectric polarization effect, cause film inside (active layer quantum well) to produce powerful internal electric field, (QuantumConfine Stark Effect, QCSE; History tank effect) reduced the luminous efficiency of GaN film widely.
Therefore on sapphire substrate, design and produce out micron order or nano level pattern with micro-structural ad hoc rules, use the output light form (relief pattern on the sapphire substrate can produce the extraction efficiency of the effect increase light of light scattering or refraction) of control LED, the GaN film growth can produce brilliant effect laterally of heap of stone on the patterning sapphire substrate simultaneously, reduce and be grown in the dislocation defects between the GaN on the sapphire substrate, improve crystalloid amount of heap of stone, and promote LED internal quantum, increase light extraction efficiency.
The substrate figure of making now is varied, and column is arranged, the bag shape, and taper, concavo-convex etc.But its complex steps need to make certain figure with hard mask in advance, and productivity ratio is low, the figure consistency is low, rate of finished products is low and technology is unstable.
Summary of the invention
The technical problem to be solved in the present invention is, making at the graphic sapphire substrate of prior art needs make certain figure with hard mask in advance, and productivity ratio is low, the figure consistency is low, rate of finished products is low and the unsettled defective of technology, a kind of photoetching of adopting noncontact, realizing the graphic sapphire substrate by graphic projection is provided, adopt photoresist to realize the etching of graphic sapphire substrate as mask, the productivity ratio height, the manufacture method of the graphic sapphire substrate that light extraction efficiency is high and stable.
The technical solution adopted for the present invention to solve the technical problems is: construct a kind of manufacture method of graphic sapphire substrate, spare glue comprising step: S1, the substrate for the treatment of photoetching and handle; S2, mask plate and described substrate alignment are installed, and described mask plate is arranged on described substrate top by setpoint distance; S3, the default conditions of exposure of basis carry out projection exposure; S4, to the exposure after substrate carry out development treatment; S5, the substrate after developing is carried out baking processing, with the photoresist of substrate surface mask as etching; After the temperature of S6, the temperature of setting etch chamber and vacuum degree, radome and the control temperature of cooling cycle machine, the substrate after the baking processing is put on the slide glass base station of etch chamber; S7, feeding etching gas carry out etching to substrate, by anode radio frequency source power and bias voltage radio frequency source power control etching speed and quality; By described cooling cycle machine described slide glass base station is cooled off simultaneously.
In the manufacture method of graphic sapphire substrate of the present invention, described step S2 installs mask plate and described substrate alignment, and the projection ratio of the graphic projection that sets described mask plate by camera lens control group to the described substrate; Described step S3 is for carrying out the subregion projection exposure according to default conditions of exposure in described projection ratio; After the control temperature of described step S6 for the temperature of the temperature of setting etch chamber and vacuum degree, radome and cooling cycle machine, the substrate after the baking processing is put on the slide glass base station with a plurality of film traps of etch chamber; Described step S7 comprises that also each film trap feeds helium described substrate is cooled off.
In the manufacture method of graphic sapphire substrate of the present invention, also comprise step: S11 between described step S1 and the S2, the substrate behind the even glue is carried out baking processing; Also comprise step: S31 between described step S3 and the step S4, the substrate after the exposure is carried out baking processing.
In the manufacture method of graphic sapphire substrate of the present invention, the default conditions of exposure among the described step S3 comprises time for exposure, exposure light intensity, exposure area, camera lens focal plane and projection ratio; Wherein the time for exposure is 150-300msec, and the exposure light intensity is 300-400mw/cm
2, the exposure area is 3.5mm*3.5mm-5mm*5mm, the projection ratio is 8: 1-3: 1.
In the manufacture method of graphic sapphire substrate of the present invention, described step S3 comprises: S31, the default conditions of exposure of basis carry out projection exposure in described projection ratio on the exposure area of described substrate; S32, described substrate is moved changing the exposure area of described substrate, repeat S31 and finish until described substrate Zone Full exposure by step printing equipment.
In the manufacture method of graphic sapphire substrate of the present invention, described step S5 toasts 60-180 second with the substrate after the described development between the 100-130 degree.
In the manufacture method of graphic sapphire substrate of the present invention, the temperature of etch chamber described in the described step S6 is the 30-50 degree, and the vacuum degree of described etch chamber is lower than 5*10
-2Handkerchief, the temperature of described radome are the 100-200 degree, and the control temperature of described cooling cycle machine is set to subzero 5 degree of subzero 15-.
In the manufacture method of graphic sapphire substrate of the present invention, described step S7 comprises: S71, make the vacuum degree of described etch chamber be lower than 5*10
-4Handkerchief; S72, feeding etching gas to described etch chamber pressure are the 3-10 handkerchief; S73,10-15 are 500-1000 watt with the power setting of described anode radio frequency source in second; S74,10-15 are 200-500 watt with the power setting of described bias voltage radio frequency source in second; S75, to keep described etch chamber pressure be the 0.3-1 handkerchief, etching 600-1300 second.
In the manufacture method of graphic sapphire substrate of the present invention, described etching gas is a boron chloride, and the feeding flow is 30～100sccm, and temperature is the 30-60 degree during feeding; The helium pressure that described film trap feeds is the 600-1200 handkerchief.
In the manufacture method of graphic sapphire substrate of the present invention, in the manufacture method of graphic sapphire substrate of the present invention, also comprise step: S8 after the described step S7, use the mixture of sulfuric acid and hydrogen peroxide to remove the photoetching glue residue of the substrate surface after the described etching; S9, the substrate after using acetone, ethanol and deionized water to described etching cleans successively.
Implement the manufacture method of graphic sapphire substrate of the present invention, have following beneficial effect: mask plate need not directly to contact with substrate during photoetching, avoided the damage of the mask plate that the photoresist haftplatte causes, need not during etching with evaporation one deck hard mask as silicon dioxide or chromium, nickel and so on, directly do mask with photoresist, can make meticulous litho pattern, problem such as the photoresist carbonization of adopting the low temperature etching to solve simultaneously to occur in the etching process, figure high temperature deformation.
The direct transmissive mask plate of light arrives camera lens control group, just can realize the transfer of litho pattern projection in proportion through camera lens control group, as much as possible figure is accomplished minimum, and exposure accuracy satisfies the requirement of sub-micron rank fully, process repeatability and stability are improved, and the multiple type of cooling has guaranteed that problems such as photoresist carbonization, figure high temperature deformation can not appear in photoresist in etching process.Substrate behind the even glue carries out baking processing and can effectively remove contained solvent in the photoresist, strengthens the adhesion of photoresist, discharges the stress in the photoresist film; Substrate after the exposure carries out baking processing to reduce standing wave effect.Default conditions of exposure can be realized better lithographic results.Step printing makes regional exposure more accurate.After the development the hard baking of substrate is evaporated fully the solvent of photoresist the inside, in etching, protect the ability and the further adhesion that strengthens between photoresist and the substrate surface of lower surface to improve photoresist.The temperature that temperature is higher than etch chamber that is provided with of radome prevents etching product deposition; The temperature control of cooling cycle machine well prevents the photoresist carbonization that causes because of high temperature, the problem of tpo substrate form height warm deformation.The cooperation of anode radio frequency source and bias voltage radio frequency source can be good at controlling the figure that etching is come out.In advance the boron chloride of liquid state being become active gaseous state makes etching effect better; Film trap feeds helium and carries out cooling processing, prevents the photoresist carbonization that causes because of high temperature, the problem of tpo substrate form height warm deformation.The mixture of sulfuric acid and hydrogen peroxide can well be removed photoetching glue residue; The residual of sulfuric acid and hydrogen peroxide can be well removed in the cleaning of acetone, ethanol and deionized water.
Description of drawings
The invention will be further described below in conjunction with drawings and Examples, in the accompanying drawing:
Fig. 1 is the flow chart of first preferred embodiment of the manufacture method of graphic sapphire substrate of the present invention;
Fig. 2 is the flow chart of second preferred embodiment of the manufacture method of graphic sapphire substrate of the present invention;
Fig. 3 is the flow chart of the 3rd preferred embodiment of the manufacture method of graphic sapphire substrate of the present invention;
Fig. 4 is the flow chart of the 4th preferred embodiment of the manufacture method of graphic sapphire substrate of the present invention;
Fig. 5 is the flow chart of the 5th preferred embodiment of the manufacture method of graphic sapphire substrate of the present invention;
Fig. 6 is the flow chart of the 6th preferred embodiment of the manufacture method of graphic sapphire substrate of the present invention;
Fig. 7 is the configuration of surface figure before the etching after the graphic sapphire substrate of the present invention photoetching;
Fig. 8 is the configuration of surface figure after the graphic sapphire substrate etching of the present invention.
Embodiment
In order to make purpose of the present invention, technical scheme and advantage clearer,, the present invention is further elaborated below in conjunction with drawings and Examples.Should be appreciated that specific embodiment described herein only in order to explanation the present invention, and be not used in qualification the present invention.
Flow chart at first preferred embodiment of the manufacture method of graphic sapphire substrate of the present invention shown in Figure 1; The manufacture method of described graphic sapphire substrate starts from step 100, arrive subsequently next step 101, the substrate for the treatment of photoetching is spared glue and is handled; Arrive subsequently next step 102, mask plate and described substrate alignment are installed, and described mask plate are arranged on described substrate top by setpoint distance; Arrive subsequently next step 103, carry out projection exposure according to default conditions of exposure; Arrive subsequently next step 104, to the exposure after substrate carry out development treatment; Arrive subsequently next step 105, the substrate after developing is carried out baking processing, with the photoresist of substrate surface mask as etching; Arrive subsequently next step 106, set the control temperature of the temperature of the temperature of etch chamber and vacuum degree, radome and cooling cycle machine after, the substrate after the baking processing is put on the slide glass base station of etch chamber; Arrive subsequently next step 107, feed etching gas substrate carried out etching, by anode radio frequency source power and bias voltage radio frequency source power control etching speed and quality; By described cooling cycle machine described slide glass base station is cooled off simultaneously; Final method ends at step 108.Mask plate need not directly to contact with substrate when adopting the manufacture method photoetching of graphic sapphire substrate of the present invention, avoided the damage of the mask plate that the photoresist haftplatte causes, need not during etching with evaporation one deck hard mask as silicon dioxide or chromium, nickel and so on, directly do mask with photoresist, can make meticulous litho pattern, problem such as the photoresist carbonization of adopting the low temperature etching to solve simultaneously to occur in the etching process, figure high temperature deformation.
Flow chart at second preferred embodiment of the manufacture method of graphic sapphire substrate of the present invention shown in Figure 2; The manufacture method of described graphic sapphire substrate starts from step 200, arrive subsequently next step 201, the substrate for the treatment of photoetching is spared glue and is handled; Arrive subsequently next step 202, mask plate and described substrate alignment are installed, and the projection ratio of the graphic projection that sets described mask plate by camera lens control group to the described substrate; Arrive subsequently next step 203, carry out the subregion projection exposure according to default conditions of exposure in described projection ratio; Arrive subsequently next step 204, to the exposure after substrate carry out development treatment; Arrive subsequently next step 205, the substrate after developing is carried out baking processing, with the photoresist of substrate surface mask as etching; Arrive subsequently next step 206, set the control temperature of the temperature of the temperature of etch chamber and vacuum degree, radome and cooling cycle machine after, the substrate after the baking processing is put on the slide glass base station with a plurality of film traps of etch chamber; Arrive subsequently next step 207, feed etching gas substrate carried out etching, by anode radio frequency source power and bias voltage radio frequency source power control etching speed and quality; By described cooling cycle machine described slide glass base station is cooled off simultaneously, each film trap feeds helium described substrate is cooled off; Final method ends at step 208.In the making patterned substrate process commonly used at present, what the photolithographic exposure system used mostly is contact photoetching machine, owing to be the photoetching transfer of equal proportion, causes the figure live width not high, more than the dimension of picture 2 μ m, resolution is low, productivity ratio is low, the low yield that causes of figure consistency descends.Mask plate need not directly to contact with substrate when adopting this method to carry out photoetching, the direct transmissive mask plate of light arrives camera lens control group, camera lens control group is arranged between substrate and the mask plate by fixture, shift to realize litho pattern projection in proportion by the distance between the control of transmission device mobile fixture and substrate and the mask plate, as much as possible figure is accomplished minimum, also avoided simultaneously the damage of the mask plate that the photoresist haftplatte causes, and exposure accuracy satisfies the requirement of sub-micron rank fully, and process repeatability and stability are improved.Etching technics originally is for treating the hard mask as silicon dioxide or chromium, nickel and so on of evaporation one deck on the photolithographic substrates before photoetching, on hard mask, apply photoresist then and carry out photoetching treatment, remove photoresist after photoetching finishes to handle and remove photoresist, carrying out etching processing subsequently to expose hard mask.And this method need not with evaporation one deck hard mask as silicon dioxide or chromium, nickel and so on, the processing of not removing photoresist after photoetching finishes, directly do mask with photoresist, can make meticulous etching figure, problem such as the photoresist carbonization of adopting the low temperature etching to solve simultaneously to occur in the etching process, figure high temperature deformation.The substrate of the cylindric figure of making through this method through epitaxial growth, chip manufacturing, can make chip brightness be improved largely, and brightness improves 30%～80%.The bag shape graphic design of being done is more little, narrower gap, and chip brightness promotes high more.
Flow chart at the 3rd preferred embodiment of the manufacture method of graphic sapphire substrate of the present invention shown in Figure 3; The manufacture method of described graphic sapphire substrate starts from step 300, arrive subsequently next step 301, the substrate for the treatment of photoetching is spared glue and is handled; Arrive subsequently next step 302, the substrate behind the even glue is carried out baking processing; Arrive subsequently next step 303, mask plate and described substrate alignment are installed, and the projection ratio of the graphic projection that sets described mask plate by camera lens control group to the described substrate; Arrive subsequently next step 304, carry out the subregion projection exposure according to default conditions of exposure in described projection ratio; Arrive subsequently next step 305, to the exposure after substrate carry out baking processing; Arrive subsequently next step 306, to the exposure after substrate carry out development treatment; Arrive subsequently next step 307, the substrate after developing is carried out baking processing, with the photoresist of substrate surface mask as etching; Arrive subsequently next step 308, set the control temperature of the temperature of the temperature of etch chamber and vacuum degree, radome and cooling cycle machine after, the substrate after the baking processing is put on the slide glass base station with a plurality of film traps of etch chamber; Arrive subsequently next step 309, feed etching gas substrate carried out etching, by anode radio frequency source power and bias voltage radio frequency source power control etching speed and quality; By described cooling cycle machine described slide glass base station is cooled off simultaneously, each film trap feeds helium described substrate is cooled off; Final method ends at step 310.Substrate behind the even glue carries out baking processing and can effectively remove contained solvent in the photoresist, strengthens the adhesion of photoresist, discharges the stress in the photoresist film; Substrate after the exposure carries out baking processing to reduce standing wave effect.
As the preferred embodiment of the manufacture method of graphic sapphire substrate of the present invention, the default conditions of exposure among the wherein said step S3 comprises time for exposure, exposure light intensity, exposure area, camera lens focal plane and projection ratio.Wherein the time for exposure is 150-300msec, and the exposure light intensity is 300-400mw/cm
2, the exposure area is 3.5mm*3.5mm-5mm*5mm, the projection ratio is 8: 1-3: 1.This method adopts is regional exposure in proportion, therefore time for exposure and exposure light intensity were set to guarantee the effect of exposure before exposure, by the transfer between the step printing device realization exposure area, definite good best camera lens focal plane and projection ratio are to guarantee the effect of exposure after each simultaneously the transfer.
Flow chart at the 4th preferred embodiment of the manufacture method of graphic sapphire substrate of the present invention shown in Figure 4; The step S3 of the manufacture method of described graphic sapphire substrate starts from step 400, arrive subsequently next step 401, on the exposure area of described substrate, carry out projection exposure according to default conditions of exposure in described projection ratio; Arrive subsequently next step 402, by step printing equipment described substrate is moved changing the exposure area of described substrate, repeating step 401 is finished until described substrate Zone Full exposure; Final method ends at step 403.Owing to the size of mask plate and the quality control reason of photoetching, can't once carry out the exposing operation of full wafer substrate, step printing makes regional exposure more accurate, all will redefine the camera lens focal plane and the effect of projection ratio to guarantee to expose of camera lens control group the best after substrate being moved at every turn.
As the preferred embodiment of the manufacture method of graphic sapphire substrate of the present invention, described step S5 toasts 60-180 second with the substrate after the described development between the 100-130 degree.The temperature of etch chamber described in the described step S6 is the 30-50 degree, and the vacuum degree of described etch chamber is lower than 5*10
-2Handkerchief, the temperature of described radome are the 100-200 degree, and the control temperature of described cooling cycle machine is set to subzero 5 degree of subzero 15-.After the development the hard baking of substrate is evaporated fully the solvent of photoresist the inside, in etching, protect the ability and the further adhesion that strengthens between photoresist and the substrate surface of lower surface to improve photoresist.The temperature that temperature is higher than etch chamber that is provided with of radome prevents etching product deposition.The temperature control of cooling cycle machine well prevents the photoresist carbonization that causes because of high temperature, the problem of tpo substrate form height warm deformation.
Flow chart at the 5th preferred embodiment of the manufacture method of graphic sapphire substrate of the present invention shown in Figure 5; The step S7 of the manufacture method of described graphic sapphire substrate starts from step 500, makes the vacuum degree of described etch chamber be lower than 5*10
-4Handkerchief; Arrive next step 501 subsequently, feeding etching gas to described etch chamber pressure is the 3-10 handkerchief; Arriving next step 502 subsequently, is 500-1000 watt with the power setting of described anode radio frequency source in 10-15 second; Arriving next step 503 subsequently, is 200-500 watt with the power setting of described bias voltage radio frequency source in 10-15 second; Arrive next step 504 subsequently, keeping described etch chamber pressure is the 0.3-1 handkerchief, etching 600-1300 second; Arrive next step 505 subsequently, after etching finishes the substrate after the etching is taken out.Final this method ends at step 506.The quantity of this method employing anode radio frequency source and bias voltage radio frequency source control etching gas and etching speed are to reach the effect of control etching figure.
As the preferred embodiment of the manufacture method of graphic sapphire substrate of the present invention, described etching gas is a boron chloride, and the feeding flow is 30～100sccm, and temperature is the 30-60 degree during feeding.The helium pressure that described film trap feeds is the 600-1200 handkerchief.In advance the boron chloride of liquid state being become active gaseous state makes etching effect better.Film trap feeds helium and carries out cooling processing, prevents the photoresist carbonization that causes because of high temperature, the problem of tpo substrate form height warm deformation.
Flow chart at the 6th preferred embodiment of the manufacture method of graphic sapphire substrate of the present invention shown in Figure 6; The manufacture method of described graphic sapphire substrate starts from step 600, arrive subsequently next step 601, the substrate for the treatment of photoetching is spared glue and is handled; Arrive subsequently next step 602, the substrate behind the even glue is carried out baking processing; Arrive subsequently next step 603, mask plate and described substrate alignment are installed, and the projection ratio of the graphic projection that sets described mask plate by camera lens control group to the described substrate; Arrive subsequently next step 604, carry out the subregion projection exposure according to default conditions of exposure in described projection ratio; Arrive subsequently next step 605, to the exposure after substrate carry out baking processing; Arrive subsequently next step 606, to the exposure after substrate carry out development treatment; Arrive subsequently next step 607, the substrate after developing is carried out baking processing, with the photoresist of substrate surface mask as etching; Arrive subsequently next step 608, set the control temperature of the temperature of the temperature of etch chamber and vacuum degree, radome and cooling cycle machine after, the substrate after the baking processing is put on the slide glass base station with a plurality of film traps of etch chamber; Arrive subsequently next step 609, feed etching gas substrate carried out etching, by anode radio frequency source power and bias voltage radio frequency source power control etching speed and quality; By described cooling cycle machine described slide glass base station is cooled off simultaneously, each film trap feeds helium described substrate is cooled off; Arrive subsequently next step 610, use the mixture of sulfuric acid and hydrogen peroxide to remove the photoetching glue residue of the substrate surface after the described etching; Arrive subsequently next step 611, the substrate after using acetone, ethanol and deionized water to described etching successively cleans; Final method ends at step 612.The mixture of sulfuric acid and hydrogen peroxide can well be removed photoetching glue residue; The residual of sulfuric acid and hydrogen peroxide can be well removed in the cleaning of acetone, ethanol and deionized water.
The manufacture method of graphic sapphire substrate of the present invention need not with evaporation one deck hard mask as silicon dioxide or chromium, nickel and so on, the processing of not removing photoresist after photoetching finishes, directly do mask with photoresist, can make the figure diameter is the hemispherical figure of evenly arranging and constituting of 0.5～8 μ m, and the hemisphere height is 0.25～4 μ m.Owing to do mask with photoresist, the problem that needs to solve is exactly the problems such as photoresist carbonization, heat dissipation problem and figure high temperature deformation that occur in the etching process.The cooling to the slide glass base station of helium cooling film trap and independent cooling cycle machine is arranged, cool off at the high temperature in the photoresist mask etching process specially, directly taked photoresist to carry out etching as mask, with the processing step of its simple and stable and cheap cost, the stable submicron figure that on Sapphire Substrate, processes periodic arrangement.
The implementation process of the manufacture method of graphic sapphire substrate of the present invention is described below by specific embodiment:
1, Sapphire Substrate is placed on the automatic sol evenning machine, photoresist drops in the middle of the substrate, and after second, the rotating speed with 3000rpm quickens rotation to sol evenning machine again, and photoresist is evenly thrown away with the rotating speed low speed rotation 5-10 of 500rpm.Gluing thickness is between 0.7～3um.
2, Sapphire Substrate is placed on the vacuum hot plate, hot plate temperature is between 80～110 ℃, toasts 30～60 seconds; Remove contained solvent in the photoresist, strengthen the adhesion of photoresist; Discharge the stress in the photoresist film.
3, the Sapphire Substrate that will toast before the exposure is placed on the cold drawing and cools off.
4, substrate and mask plate are packed into fixture has individual reference mark on the work stage of mask aligner, it is regarded as the initial point of coordinate system, respectively mask plate and Sapphire Substrate is aimed at this reference mark.
5, set the stepping accuracy of exposure device, in the 150-300msec scope, select a fixing time for exposure, directly determine the optimum lens focal plane with the step of 0.1-0.5 μ m then.
6, regulate the light intensity that is evenly distributed, make (largest light intensity-minimum intensity of light)/(largest light intensity+minimum intensity of light), thereby determine the optimum exposure light intensity less than 2%.
7, select suitable exposure area, according to fixing projection ratio exposure.For example the exposure light intensity is set at 300-400mw/cm
2, the time for exposure is set at 150-300msec, and exposure area each time is (3.5-5) * (3.5-5mm), and fixedly the projecting figure ratio is 5: 1, projection 11-15 zone on each Sapphire Substrate.
8, the substrate after the exposure is placed in hot plate or the baking oven and toasts, and between hot plate or oven temperature were set 110～130 ℃, stoving time 40～90 seconds reduced standing wave effect.
9, the substrate after will toasting is placed in the automatic processing machine photoresist developing.The nozzles spray developer solution developed for 10～30 seconds at substrate surface, and substrate after the development fully, with deionized water rinsing substrate and rotation drying, forms uniform litho pattern this moment with 100～500rpm low speed rotation on photoresist simultaneously.
10, the substrate after developing toasts in hot plate or baking oven, with the photoresist of the substrate surface mask as etching.Further evaporate the solvent of photoresist the inside; in etching, protect the ability and the further adhesion that strengthens between photoresist and the substrate surface of lower surface to improve photoresist; simultaneously also be mainly to allow it form a similar hemispheric figure, for following etching is prepared.
11, the substrate after will toasting is placed on and carries out the graphical etching of dry method in the plasma etching machine, makes graph copying on the photoresist to sapphire surface.Dry etching adopts inductively coupled plasma etching equipment, and it almost can make vertical surface profile.This method can also be brought up to etch rate per minute hundreds of nanometer, this means that forming patterned structures on the monoblock wafer only needs about a few minutes.Short etch period makes this technology be fit to extensive requirement of making.
12, the substrate after the baking processing is put into the pallet of pass box, put on the slide glass base station of etch chamber, etch chamber is extracted into 5*10 by the substrate of the manipulator in the pass box after with baking processing
-2The vacuum that handkerchief is following, the temperature of etch chamber is set to the 30-50 degree, the temperature of radome is set to the 100-200 degree, the control temperature of cooling cycle machine is set to subzero 5 degree of subzero 15-, reach above-mentioned set point after, the beginning etching technics.
13, the vacuum when etch chamber reaches 5*10
-4Below the handkerchief, begin to feed the boron chloride as etching gas, flow is 30-100sccm, and the pressure that makes etch chamber is in the scope of 3～10 handkerchiefs.Before feeding boron chloride, by the heating tape boron chloride is heated to the 30-60 degree earlier, in advance the boron chloride of boil down to liquid state is become movable active gaseous state.
14, when scope at 3～10 handkerchiefs of the pressure stability of etch chamber, the anode radio frequency source begins to apply radio-frequency power above process gas, and 10-15 reaches 500-1000 watt between second, produce highdensity plasma above substrate.Meanwhile the bias voltage radio frequency source also begins power output, reaches 200-500 watt between the 10-15sec, and neutral groups such as picked-up chloride ion form Dc bias.The automatic pressure adjuster valve is started working, and chamber pressure is controlled in the scope of 0.3～1 handkerchief.The power that strengthens/reduce the anode radio frequency source can increase/reduce the density of plasma; The power that strengthens/reduce the bias voltage radio frequency source can increase/reduce the Dc bias of vertical direction, thereby the bombardment dynamics that strengthens/reduce sapphire surface is an etching speed.Can increase etch rate though strengthen Dc bias, also can cause the selectivity variation of etching.Anode radio frequency source and bias voltage radio frequency source combine, and setting etch chamber pressure simultaneously is 0.3～1 handkerchief, can play conclusive effect to the figure what shape is substrate etching go out.
15, in etching, cooling cycle machine is by being controlled between subzero 5 degree of subzero 15-the cooling of etching machine bottom electrode and the slide glass base station temperature with the slide glass base station, the pressure that film trap feeds helium is the 600-1200 handkerchief, the leak rate (promptly from film trap leak to etch chamber) of helium in etch chamber is 3-8sccm simultaneously, control by pressure and flow controller, the automatic pressure adjuster valve guarantees that the pressure of etch chamber is controlled in 0.3～1 handkerchief scope simultaneously, under the effect of the dual-cooled of cooling cycle machine and helium cooling, guaranteed in time to take away the heat under the substrate, wherein the leak rate control that temperature and helium are set of cooling cycle machine is very important, in case departed from set point, will cause radiating effect bad, the photoresist carbonization, pattern distortion, even whole technology all can't go on.
16, etch period 600-1300 second, the length of etch period also influences the shape of the depth of etching, the size that influences the etching figure and etching figure.
17, after etching finishes, the substrate after the etching is taken out.
18, use the mixture of sulfuric acid and hydrogen peroxide to remove the photoetching glue residue of substrate surface for the substrate after the etching, the substrate after using acetone, ethanol and deionized water to described etching then successively cleans.
19, the substrate after will cleaning is put into automatic drier, and substrate sprays deionized water at substrate surface in high speed rotating, and the water with substrate surface under action of centrifugal force dries, and finishes whole manufacture craft.
When adopting this manufacture method, certain etch rate of controlling well is selected ratio, and promptly photoresist and sapphire etch rate are selected than about 3: 1.Because photoresist has passed through the baking of uniform temperature, patterned surface has certain radian (as shown in Figure 7), in etching process,, finally form bag shape, coniform figure (as shown in Figure 8) at sapphire surface owing to photoresist upper and lower surface and Sapphire Substrate etch rate difference.This graphic sapphire substrate is after extension, chip technology, and chip brightness is than being improved largely before, and brightness improves 30%～80%.The bag shape graphic design of being done is more little, narrower gap, and chip brightness promotes high more.
The above only is embodiments of the invention; be not so limit claim of the present invention; every equivalent structure transformation that utilizes specification of the present invention and accompanying drawing content to be done, or directly or indirectly be used in other relevant technical fields, all in like manner be included in the scope of patent protection of the present invention.
Claims (10)
1. the manufacture method of a graphic sapphire substrate is characterized in that, comprises step:
S1, the substrate for the treatment of photoetching are spared glue and are handled;
S2, mask plate and described substrate alignment are installed, and described mask plate is arranged on described substrate top by setpoint distance;
S3, the default conditions of exposure of basis carry out projection exposure;
S4, to the exposure after substrate carry out development treatment;
S5, the substrate after developing is carried out baking processing, with the photoresist of substrate surface mask as etching;
After the temperature of S6, the temperature of setting etch chamber and vacuum degree, radome and the control temperature of cooling cycle machine, the substrate after the baking processing is put on the slide glass base station of etch chamber;
S7, feeding etching gas carry out etching to substrate, by anode radio frequency source power and bias voltage radio frequency source power control etching speed and quality; By described cooling cycle machine described slide glass base station is cooled off simultaneously.
2. the manufacture method of graphic sapphire substrate according to claim 1 is characterized in that,
Described step S2 installs mask plate and described substrate alignment, and the projection ratio of the graphic projection that sets described mask plate by camera lens control group to the described substrate;
Described step S3 is for carrying out the subregion projection exposure according to default conditions of exposure in described projection ratio;
After the control temperature of described step S6 for the temperature of the temperature of setting etch chamber and vacuum degree, radome and cooling cycle machine, the substrate after the baking processing is put on the slide glass base station with a plurality of film traps of etch chamber;
Described step S7 comprises that also each film trap feeds helium described substrate is cooled off.
3. the manufacture method of graphic sapphire substrate according to claim 2 is characterized in that, also comprises step: S11 between described step S1 and the S2, the substrate behind the even glue is carried out baking processing; Also comprise step: S31 between described step S3 and the step S4, the substrate after the exposure is carried out baking processing.
4. the manufacture method of graphic sapphire substrate according to claim 2 is characterized in that, the default conditions of exposure among the described step S3 comprises time for exposure, exposure light intensity, exposure area, camera lens focal plane and projection ratio; Wherein the time for exposure is 150-300msec, and the exposure light intensity is 300-400mw/cm
2, the exposure area is 3.5mm*3.5mm-5mm*5mm, the projection ratio is 8: 1-3: 1.
5. the manufacture method of graphic sapphire substrate according to claim 2 is characterized in that, described step S3 comprises:
S31, the default conditions of exposure of basis carry out projection exposure in described projection ratio on the exposure area of described substrate;
S32, described substrate is moved changing the exposure area of described substrate, repeat S31 and finish until described substrate Zone Full exposure by step printing equipment.
6. the manufacture method of graphic sapphire substrate according to claim 2 is characterized in that, described step S5 toasts 60-180 second with the substrate after the described development between the 100-130 degree.
7. the manufacture method of graphic sapphire substrate according to claim 2 is characterized in that, the temperature of etch chamber described in the described step S6 is the 30-50 degree, and the vacuum degree of described etch chamber is lower than 5*10
-2Handkerchief, the temperature of described radome are the 100-200 degree, and the control temperature of described cooling cycle machine is set to subzero 5 degree of subzero 15-.
8. the manufacture method of graphic sapphire substrate according to claim 2 is characterized in that, described step S7 comprises:
S71, make the vacuum degree of described etch chamber be lower than 5*10
-4Handkerchief;
S72, feeding etching gas to described etch chamber pressure are the 3-10 handkerchief;
S73,10-15 are 500-1000 watt with the power setting of described anode radio frequency source in second;
S74,10-15 are 200-500 watt with the power setting of described bias voltage radio frequency source in second;
S75, to keep described etch chamber pressure be the 0.3-1 handkerchief, etching 600-1300 second.
9. the manufacture method of graphic sapphire substrate according to claim 2 is characterized in that, described etching gas is a boron chloride, and the feeding flow is 30～100sccm, and temperature is the 30-60 degree during feeding; The helium pressure that described film trap feeds is the 600-1200 handkerchief.
10. the manufacture method of graphic sapphire substrate according to claim 2 is characterized in that, also comprises step after the described step S7:
The mixture of S8, use sulfuric acid and hydrogen peroxide is removed the photoetching glue residue of the substrate surface after the described etching;
S9, the substrate after using acetone, ethanol and deionized water to described etching cleans successively.
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| CN102694090A (en) * | 2012-06-05 | 2012-09-26 | 杭州士兰明芯科技有限公司 | Manufacturing method for graphical sapphire substrate |
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