CN106601601B - Photoetching method of patterned sapphire substrate - Google Patents
Photoetching method of patterned sapphire substrate Download PDFInfo
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- CN106601601B CN106601601B CN201710065512.XA CN201710065512A CN106601601B CN 106601601 B CN106601601 B CN 106601601B CN 201710065512 A CN201710065512 A CN 201710065512A CN 106601601 B CN106601601 B CN 106601601B
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- 239000000758 substrate Substances 0.000 title claims abstract description 81
- 238000000034 method Methods 0.000 title claims abstract description 41
- 229910052594 sapphire Inorganic materials 0.000 title claims abstract description 29
- 239000010980 sapphire Substances 0.000 title claims abstract description 29
- 238000001259 photo etching Methods 0.000 title abstract description 13
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 70
- 239000010408 film Substances 0.000 claims abstract description 69
- 230000001133 acceleration Effects 0.000 claims abstract description 17
- 239000007788 liquid Substances 0.000 claims abstract description 17
- 238000005507 spraying Methods 0.000 claims abstract description 12
- 239000002245 particle Substances 0.000 claims abstract description 9
- 238000000151 deposition Methods 0.000 claims abstract description 8
- 238000007689 inspection Methods 0.000 claims abstract description 8
- 238000001035 drying Methods 0.000 claims abstract description 5
- 239000010409 thin film Substances 0.000 claims abstract description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 238000009826 distribution Methods 0.000 claims description 7
- 238000005516 engineering process Methods 0.000 claims description 7
- 238000003384 imaging method Methods 0.000 claims description 7
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 7
- 238000007664 blowing Methods 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 238000000059 patterning Methods 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- 229910052681 coesite Inorganic materials 0.000 claims 1
- 229910052906 cristobalite Inorganic materials 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 229910052682 stishovite Inorganic materials 0.000 claims 1
- 229910052905 tridymite Inorganic materials 0.000 claims 1
- 238000012797 qualification Methods 0.000 abstract description 3
- 238000000206 photolithography Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
The invention discloses a photoetching method of a patterned sapphire substrate, which comprises the following steps: depositing a layer of film on the patterned sapphire substrate, and removing particles and drying at low temperature; under the condition of unchanged rotation acceleration, dripping the liquid photoresist and the tackifier into the middle of the thin film layer surface of the substrate, uniformly covering the liquid photoresist on the surface of the wafer, and baking to form a photoresist film; projecting the pattern file on the mask onto the photoresist film of the substrate, setting exposure conditions, and performing exposure treatment; under the condition of unchanged rotation acceleration, spraying a developing solution on the surface of the photoresist film of the substrate to carry out development treatment, and carrying out development inspection after development is completed. The invention has the characteristics of high exposure precision level, good process repeatability, low linear dislocation density, high internal quantum density, high resolution, high finished product qualification rate and yield, accurate dimension of the obtained finished product graph, good integrity, stable performance and wide application prospect.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a photoetching method of a patterned sapphire substrate.
Background
Photolithography is a process whereby specific portions of a thin film on the surface of a wafer are removed through a series of production steps. After this, the wafer surface will leave a film with the micropatterned structure. Through the photolithography process, what is ultimately left on the wafer is the feature pattern portion. The photolithography process utilizes a combination of photolithography and chemical etching techniques to produce precise, fine and complex thin layer patterns on the surface of the workpiece. The principles of photolithography, while known in the beginning of the 19 th century, have long been inapplicable due to the lack of good photoresists. Until the 50s of the 20 th century, photolithography has been rapidly developed after the U.S. has made a high resolution and excellent resist performance Kodak Photoresist (KPR) and began to be used in the semiconductor industry. Photolithography is one of the key processes for manufacturing advanced semiconductor devices and large scale integrated circuits and has been used to scribe precision lines of gratings, rulers, scales, and the like. In recent years, with the rise in temperature of the global semiconductor lighting industry, semiconductor lighting programs have been introduced, white LEDs have begun to enter some application fields, and emergency lamps, flashlights and the like have come into the future. Sapphire crystal is the most widely used substrate material in the development process of the semiconductor lighting industry at present, and has the characteristics of high strength, high melting point, stable physical and chemical properties and the like. However, the existing domestic photoetching method for the patterned sapphire substrate has the problems of high linear dislocation density, low internal quantum density, low resolution, low productivity, poor pattern consistency, low product qualification rate and the like. Based on the above statements, the present invention proposes a lithographic method of patterning a sapphire substrate.
Disclosure of Invention
The invention aims to solve the defects in the prior art and provides a photoetching method of a patterned sapphire substrate.
A lithographic method of patterning a sapphire substrate, comprising the steps of:
s1, depositing a layer of film on a patterned sapphire substrate by utilizing a plasma enhanced chemical vapor deposition technology, removing particles on the surface of the film, and performing low-temperature drying treatment;
s2, under the condition that the rotating speed is 1000-6000 RPM and the rotating acceleration is unchanged, dripping the liquid photoresist and the tackifier into the middle of a substrate film layer according to the mass ratio of 1:0.02-0.06, uniformly covering the liquid photoresist on the surface of a wafer by utilizing centrifugal force, and then placing the substrate with the photoresist on a hot plate for baking, wherein the baking temperature is 80-110 ℃, the baking time is 30-90S, and the photoresist film with the thickness of 0.8-1.2 mu m is formed;
s3, keeping the distance between the mask and the substrate to be 2-4 cm, projecting the pattern file on the mask onto the photoresist film of the substrate, setting exposure conditions, performing partial imaging exposure on the pattern file on the mask by using a stepping high-precision exposure machine, and then completing exposure on all the pattern files on the mask by using a scanning or distribution repetition method;
and S4, under the condition that the rotation speed is 300-600 RPM and the rotation acceleration is unchanged, spraying the developing solution on the surface of the substrate photoresist film exposed in the step S3, performing development treatment, transferring the pattern file on the mask plate to the surface of the substrate photoresist film, and performing development inspection after development is completed.
Preferably, the film in the step S1 is SiO 2 Film, ni film, si 3 N 3 Film or Si 3 N 4 One of the films.
Preferably, the particle removing method in the step S1 is one of a chemical wet cleaning method, a high-pressure nitrogen blowing method, and a high-pressure water spraying method.
Preferably, the exposure conditions in the step S3 are: the exposure focus is controlled within +/-0.5 um of the optimal focus, and the exposure time is 100-300 ms.
Preferably, the baking treatment should be performed before and after the developing treatment in the step S4.
Preferably, the baking temperature before the development treatment is 85-100 ℃ and the baking time is 18-25 s; the baking temperature after the development treatment is 105-115 ℃ and the baking time is 20-40 s.
The photoetching method for the patterned sapphire substrate provided by the invention has the advantages that the liquid photoresist and the tackifier are mixed and then dripped, the adhesiveness between the photoresist and the substrate is effectively improved, the uniformity of the photoresist and the completeness of development are ensured by controlling the rotation acceleration to be unchanged, the adhesiveness between the photoresist and the substrate is increased, the light absorption and corrosion resistance of the photoresist are enhanced, the photoresist is baked before development, the standing wave effect generated during exposure is effectively eliminated, the problem of uneven side walls of the photoresist is avoided, and the photoetching method for the patterned sapphire substrate has the characteristics of low linear dislocation density, high internal quantum density, high resolution, high qualification rate and high yield of finished products, and has the advantages of accurate dimension, good integrity, stable performance, high exposure precision level, good process repeatability and wide application prospect.
Drawings
FIG. 1 is a SEM side view of a photoresist according to one embodiment of the invention;
FIG. 2 is a SEM side view of a patterned sapphire according to a first embodiment of the present invention;
fig. 3 is a SEM top view of a patterned sapphire substrate in accordance with a first embodiment of the present invention.
Detailed Description
The invention is further illustrated in the following in connection with specific embodiments with reference to figures 1-3.
Example 1
The invention provides a photoetching method of a patterned sapphire substrate, which comprises the following steps:
s1, depositing a layer of SiO on a patterned sapphire substrate by utilizing a plasma enhanced chemical vapor deposition technology 2 The film is cleaned by adopting a high-pressure nitrogen blowing method, and particles on the surface of the film are dried at a low temperature;
s2, under the condition that the rotating speed is 5000RPM and the rotating acceleration is unchanged, dripping the liquid photoresist and the tackifier into the middle of a substrate film layer according to the mass ratio of 1:0.05, uniformly covering the liquid photoresist on the surface of a wafer by utilizing centrifugal force, and then placing the substrate with the photoresist on a hot plate for baking, wherein the baking temperature is 100 ℃, and the baking time is 40S, so that a photoresist film with the thickness of 1 mu m is formed;
s3, keeping the distance between the mask and the substrate to be 3cm, projecting the pattern file on the mask onto the photoresist film of the substrate, controlling the exposure focus to be within +/-0.5 um of the optimal focus, setting the exposure time to be 200ms, performing partial imaging exposure on the pattern file on the mask by using a stepping high-precision exposure machine, and then completing exposure on all the pattern files on the mask by using a scanning or distribution repetition method;
and S4, baking the substrate photoresist film exposed in the step S3 at 90 ℃ for 24 seconds, spraying a developing solution on the surface of the substrate photoresist film under the condition that the rotating speed is 400RPM and the rotating acceleration is unchanged, performing development treatment, transferring the pattern file on the mask plate to the surface of the substrate photoresist film, baking the pattern file at 108 ℃ for 35 seconds after development is completed, and finally performing development inspection.
Example two
The invention provides a photoetching method of a patterned sapphire substrate, which comprises the following steps:
s1, depositing a layer of Si on a patterned sapphire substrate by utilizing a plasma enhanced chemical vapor deposition technology 3 N 4 The film is cleaned by a chemical wet cleaning method, particles on the surface of the film are removed, and low-temperature drying treatment is carried out;
s2, under the condition that the rotating speed is 3000RPM and the rotating acceleration is unchanged, dripping the liquid photoresist and the tackifier into the middle of a substrate film layer according to the mass ratio of 1:0.02, uniformly covering the liquid photoresist on the surface of a wafer by utilizing centrifugal force, and then placing the substrate with the photoresist on a hot plate for baking, wherein the baking temperature is 90 ℃, and the baking time is 60S, so that a photoresist film with the thickness of 0.8 mu m is formed;
s3, keeping the distance between the mask and the substrate to be 2.5cm, projecting the pattern file on the mask onto the photoresist film of the substrate, controlling the exposure focus to be within +/-0.5 mu m of the optimal focus, setting the exposure time to be 150ms, performing partial imaging exposure on the pattern file on the mask by using a stepping high-precision exposure machine, and then completing exposure on all the pattern files on the mask by using a scanning or distribution repetition method;
and S4, baking the substrate photoresist film exposed in the step S3 at 100 ℃ for 18 seconds, spraying a developing solution on the surface of the substrate photoresist film under the condition that the rotating speed is 300RPM and the rotating acceleration is unchanged, performing development treatment, transferring the pattern file on the mask plate to the surface of the substrate photoresist film, baking the pattern file at 110 ℃ for 30 seconds after development is completed, and finally performing development inspection.
Example III
The invention provides a photoetching method of a patterned sapphire substrate, which comprises the following steps:
s1, depositing a layer of Ni film on a patterned sapphire substrate by utilizing a plasma enhanced chemical vapor deposition technology, removing particles on the surface of the film by adopting a high-pressure nitrogen blowing method, and performing low-temperature drying treatment;
s2, under the condition that the rotating speed is 6000RPM and the rotating acceleration is unchanged, dripping the liquid photoresist and the tackifier into the middle of a substrate film layer according to the mass ratio of 1:0.06, uniformly covering the liquid photoresist on the surface of a wafer by utilizing centrifugal force, and then placing the substrate with the photoresist on a hot plate for baking, wherein the baking temperature is 80 ℃, and the baking time is 90S, so that a photoresist film with the thickness of 1.2 mu m is formed;
s3, keeping the distance between the mask and the substrate to be 4cm, projecting the pattern file on the mask onto the photoresist film of the substrate, controlling the exposure focus to be within +/-0.5 um of the optimal focus, setting the exposure time to be 100ms, performing partial imaging exposure on the pattern file on the mask by using a stepping high-precision exposure machine, and then completing exposure on all the pattern files on the mask by using a scanning or distribution repetition method;
and S4, baking the substrate photoresist film exposed in the step S3 at 95 ℃ for 22 seconds, spraying a developing solution on the surface of the substrate photoresist film under the condition that the rotating speed is 600RPM and the rotating acceleration is unchanged, performing development treatment, transferring the pattern file on the mask plate to the surface of the substrate photoresist film, baking the pattern file at 105 ℃ for 40 seconds after development is completed, and finally performing development inspection.
Example IV
The invention provides a photoetching method of a patterned sapphire substrate, which comprises the following steps:
s1, depositing a layer of Si on a patterned sapphire substrate by utilizing a plasma enhanced chemical vapor deposition technology 3 N 3 The film is cleaned by spraying high-pressure water, and the particles on the surface of the film are dried at low temperature;
s2, under the condition that the rotating speed is 1000RPM and the rotating acceleration is unchanged, dripping the liquid photoresist and the tackifier into the middle of a substrate film layer according to the mass ratio of 1:0.03, uniformly covering the liquid photoresist on the surface of a wafer by utilizing centrifugal force, and then placing the substrate with the photoresist on a hot plate for baking, wherein the baking temperature is 110 ℃, and the baking time is 30S, so that a photoresist film with the thickness of 0.9 mu m is formed;
s3, keeping the distance between the mask and the substrate to be 2cm, projecting the pattern file on the mask onto the photoresist film of the substrate, controlling the exposure focus to be within +/-0.5 um of the optimal focus, setting the exposure time to be 300ms, performing partial imaging exposure on the pattern file on the mask by using a stepping high-precision exposure machine, and then completing exposure on all the pattern files on the mask by using a scanning or distribution repetition method;
and S4, baking the substrate photoresist film exposed in the step S3 at 85 ℃ for 25 seconds, spraying a developing solution on the surface of the substrate photoresist film under the condition that the rotating speed is 500RPM and the rotating acceleration is unchanged, performing development treatment, transferring the pattern file on the mask plate to the surface of the substrate photoresist film, baking the pattern file at 112 ℃ for 25 seconds after development is completed, and finally performing development inspection.
Example five
The invention provides a photoetching method of a patterned sapphire substrate, which comprises the following steps:
s1, depositing a layer of SiO on a patterned sapphire substrate by utilizing a plasma enhanced chemical vapor deposition technology 2 The film is cleaned by spraying high-pressure water, and the particles on the surface of the film are dried at low temperature;
s2, under the condition that the rotating speed is 4000RPM and the rotating acceleration is unchanged, dripping the liquid photoresist and the tackifier into the middle of a substrate film layer according to the mass ratio of 1:0.04, uniformly covering the liquid photoresist on the surface of a wafer by utilizing centrifugal force, and then placing the substrate with the photoresist on a hot plate for baking, wherein the baking temperature is 95 ℃, and the baking time is 50S, so that a photoresist film with the thickness of 1.1 mu m is formed;
s3, keeping the distance between the mask and the substrate to be 3.5cm, projecting the pattern file on the mask onto the photoresist film of the substrate, controlling the exposure focus to be within +/-0.5 mu m of the optimal focus, setting the exposure time to be 250ms, performing partial imaging exposure on the pattern file on the mask by using a stepping high-precision exposure machine, and then completing exposure on all the pattern files on the mask by using a scanning or distribution repetition method;
and S4, baking the substrate photoresist film exposed in the step S3 at 98 ℃ for 20S, spraying a developing solution on the surface of the substrate photoresist film under the condition that the rotating speed is 450RPM and the rotating acceleration is unchanged, performing development treatment, transferring the pattern file on the mask plate to the surface of the substrate photoresist film, baking the substrate photoresist film for 20S at 115 ℃ after development is completed, and finally performing development inspection.
In the photolithography method for patterning the sapphire substrate provided in the first to fifth embodiments of the present invention, the pattern period and the height of the patterned sapphire substrate are observed respectively, so as to obtain the following results:
| examples | A first part | Two (II) | Three kinds of | Fourth, fourth | Five kinds of |
| Period (mum) | 2.3 | 2.8 | 2.2 | 2.5 | 3 |
| Height (μm) | 1.1 | 1.4 | 1.3 | 1.5 | 1.7 |
The foregoing is only a preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art, who is within the scope of the present invention, should make equivalent substitutions or modifications according to the technical scheme of the present invention and the inventive concept thereof, and should be covered by the scope of the present invention.
Claims (2)
1. A lithographic method of patterning a sapphire substrate, comprising the steps of:
s1, depositing a layer of film on a patterned sapphire substrate by utilizing a plasma enhanced chemical vapor deposition technology, removing particles on the surface of the film by utilizing one of a chemical wet cleaning method, a high-pressure nitrogen blowing method or a high-pressure water spraying method, and performing low-temperature drying treatment;
s2, under the condition that the rotating speed is 1000-6000 RPM and the rotating acceleration is unchanged, the mass ratio of the liquid photoresist to the tackifier is 1: dripping 0.02-0.06 into the middle of the thin film layer surface of the substrate, uniformly covering the liquid photoresist on the surface of the wafer by utilizing centrifugal force, and then placing the substrate with the photoresist on a hot plate for baking at 80-110 ℃ for 30-90 s to form a photoresist film with the thickness of 0.8-1.2 um;
s3, keeping the distance between the mask and the substrate to be 2-4 cm, projecting the pattern file on the mask onto the photoresist film of the substrate, setting exposure conditions, performing partial imaging exposure on the pattern file on the mask by using a stepping high-precision exposure machine, and then completing exposure on all the pattern files on the mask by using a scanning or distribution repeating method, wherein the exposure focus is controlled within +/-0.5 um of the optimal focus, and the exposure time is 100-300 ms;
s4, baking at 85-100 ℃ for 18-25S before developing treatment; under the condition that the rotation speed is 300-600 RPM and the rotation acceleration is unchanged, spraying the developing solution on the surface of the substrate photoresist film exposed in the step S3 to carry out development treatment, and carrying out baking at 105-115 ℃ for 20-40S after the development treatment; and transferring the pattern file on the mask plate to the surface of the photoresist film of the substrate, and performing development inspection on the pattern file after development is completed.
2. The method according to claim 1, wherein the film in the step S1 is one of a SiO2 film, a Ni film, a Si3N3 film, and a Si3N4 film.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710065512.XA CN106601601B (en) | 2017-02-06 | 2017-02-06 | Photoetching method of patterned sapphire substrate |
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| CN201710065512.XA CN106601601B (en) | 2017-02-06 | 2017-02-06 | Photoetching method of patterned sapphire substrate |
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| CN106601601B true CN106601601B (en) | 2023-11-17 |
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| CN109426087A (en) * | 2017-08-25 | 2019-03-05 | 上海微电子装备（集团）股份有限公司 | For the exposure method and device of transparent substrate material |
| CN112099313A (en) * | 2020-09-22 | 2020-12-18 | 苏州微赛智能科技有限公司 | Photoresist coating system and photoresist coating method |
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| TW201436284A (en) * | 2013-03-05 | 2014-09-16 | Phecda Technology Co Ltd | Sapphire substrate structure suitable for pattern etching and pattern sapphire substrate generation method thereof |
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