CN109166952B - Graphical sapphire substrate and preparation method thereof - Google Patents
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- 229910052594 sapphire Inorganic materials 0.000 title claims abstract description 90
- 239000010980 sapphire Substances 0.000 title claims abstract description 90
- 239000000758 substrate Substances 0.000 title claims abstract description 56
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 239000011248 coating agent Substances 0.000 claims abstract description 143
- 238000000576 coating method Methods 0.000 claims abstract description 143
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 107
- 239000010703 silicon Substances 0.000 claims abstract description 107
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 105
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 66
- 238000005530 etching Methods 0.000 claims abstract description 55
- 238000001259 photo etching Methods 0.000 claims abstract description 16
- 239000000463 material Substances 0.000 claims abstract description 11
- 229920005989 resin Polymers 0.000 claims description 8
- 239000011347 resin Substances 0.000 claims description 8
- 239000011368 organic material Substances 0.000 claims description 6
- 238000001020 plasma etching Methods 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 239000003795 chemical substances by application Substances 0.000 claims description 2
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 claims description 2
- -1 polysiloxane Polymers 0.000 claims description 2
- 229920001296 polysiloxane Polymers 0.000 claims description 2
- 229920000734 polysilsesquioxane polymer Polymers 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 22
- 238000004519 manufacturing process Methods 0.000 abstract description 15
- 230000000694 effects Effects 0.000 abstract description 3
- 238000000149 argon plasma sintering Methods 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 33
- 238000010586 diagram Methods 0.000 description 10
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 8
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- 229910021641 deionized water Inorganic materials 0.000 description 4
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- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
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- 229920003192 poly(bis maleimide) Polymers 0.000 description 1
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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Abstract
The invention relates to the technical field of semiconductor manufacturing, in particular to a graphical sapphire substrate and a preparation method thereof. The patterned sapphire substrate comprises a sapphire flat sheet and a patterned silicon-containing organic coating formed on the surface of the sapphire flat sheet. The preparation method comprises the following steps: (a) coating the surface of the sapphire flat sheet to form a silicon-containing organic coating; (b) coating photoresist on the surface of the silicon-containing organic coating to form a photoresist layer, and photoetching to form a mask pattern; (c) and etching the silicon-containing organic coating under the protection of the photoresist layer, transferring the pattern to the silicon-containing organic coating, and removing the photoresist to obtain the patterned sapphire substrate. According to the invention, the patterned silicon-containing organic coating replaces the traditional patterned sapphire substrate, and the refractive index of the silicon-containing organic coating is lower than that of sapphire, so that the light scattering effect of the substrate can be effectively increased, and the luminous efficiency of the LED is improved; moreover, the hardness of the material is lower than that of sapphire, the latitude of photoetching and etching processes is increased, and the production cost is reduced.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a graphical sapphire substrate and a preparation method thereof.
Background
At present, the most ideal material of the LED, namely the material with the widest application is gallium nitride (GaN), but the preparation of the gallium nitride single crystal material is very difficult, and an effective method is not available at all, and the gallium nitride material is mainly epitaxially grown on a heterogeneous substrate such as sapphire, silicon carbide and the like with a similar lattice structure at present. Sapphire is the most ideal substrate material for the current LED because of the advantages of good mechanical property and chemical stability, no absorption of visible light, relatively mature manufacturing technology and the like. Compared with the common Sapphire flat Substrate, the Patterned Sapphire Substrate (PSS for short) with a specific regular microstructure pattern is manufactured on the surface of the common Sapphire flat Substrate, the surface pattern changes the growth process of a gallium nitride material, multiple growth crystal orientation choices are provided, and lattice mismatch dislocation is bent and folded in a Substrate growth area due to the difference of growth rates of gallium nitride on the surface of the pattern, so that the internal quantum efficiency of the device is effectively improved; in addition, the refractive index of sapphire is 1.760, the refractive index of gallium nitride is 2.4, and the difference of the refractive indexes can reflect light when the light enters the pattern substrate from the epitaxial layer, so that the light-emitting rate of the gallium nitride-based light-emitting diode is improved. Therefore, the PSS becomes the first substrate material for developing high-brightness high-power LED devices.
The PSS substrate manufacturing method mainly comprises the steps of forming a mask pattern on the surface of sapphire through photoetching, and then etching the sapphire to remove the mask, so that a patterned substrate is obtained. Although the manufacturing is in a large-scale batch production stage, related research work is carried out, and mainly focuses on the aspects of optimizing the pattern appearance, improving the repeatability and consistency of the etching process, reducing the production cost and the like. Because the sapphire has high hardness, the consistency and uniformity of the whole graph are very difficult to make no matter dry etching or wet etching, and the requirements of the manufacturing process on photoetching materials and equipment processes are very high.
In view of the above, the present invention is particularly proposed.
Disclosure of Invention
The first purpose of the present invention is to provide a patterned sapphire substrate to solve the technical problem of high hardness of the sapphire substrate and high etching difficulty in the prior art, and the lower refractive index than sapphire can further improve the light extraction rate.
The second purpose of the invention is to provide a preparation method of the graphical sapphire substrate, which has the advantages of simple process, high equipment and process tolerance and suitability for large-scale production.
In order to achieve the above purpose of the present invention, the following technical solutions are adopted:
a patterned sapphire substrate comprises a sapphire flat sheet and a patterned silicon-containing organic coating formed on the surface of the sapphire flat sheet.
Preferably, the silicon content in the silicon-containing organic coating is 20-45%. The refractive index of the silicon-containing organic coating varies depending on the amount of silicon contained, and is between about 1.3 and about 1.7.
According to the invention, the patterned silicon-containing organic coating replaces the existing patterned sapphire substrate on the surface of the sapphire flat sheet, the refractive index of the silicon-containing organic coating is lower than that of sapphire (1.760), the scattering effect of the substrate on light can be further increased, more light is directly scattered into gallium nitride instead of entering the substrate for transmission, and the luminous efficiency of the LED is effectively improved; moreover, the hardness of the silicon-containing organic coating is lower than that of sapphire, so that the silicon-containing organic coating has higher latitude in photoetching and etching processes, and the production cost is reduced.
Preferably, the main component of the silicon-containing organic coating is one or a mixture solution of more of polysiloxane resin, polysilsesquioxane resin, modified siloxane resin and the like, and the silicon-containing organic coating is obtained by heating and curing.
Preferably, the silicon-containing organic coating further comprises a curing agent, which can improve curing performance.
The invention also provides a preparation method of the graphical sapphire substrate, which comprises the following steps:
(a) coating the surface of the sapphire flat sheet to form a silicon-containing organic coating;
(b) coating photoresist on the surface of the silicon-containing organic coating to form a photoresist layer, and photoetching to form a mask pattern;
(c) and etching the silicon-containing organic coating under the protection of the photoresist layer, transferring the pattern to the silicon-containing organic coating, and removing the photoresist to obtain the patterned sapphire substrate.
In the step (a), the silicon-containing organic material is coated on the surface of the sapphire flat sheet, and is heated and cured to form the silicon-containing organic coating. Preferably, the coating means includes any one of spin coating, blade coating and roll coating.
Preferably, the thickness of the silicon-containing organic coating is 2.3 ± 1 μm. More preferably, the thickness of the silicon-containing organic coating is 2.3 ± 0.5 μm.
In the step (b), a mask pattern is formed on the photoresist layer by a yellow light process, and specifically, the photoresist is subjected to baking, exposure, development and other steps by the yellow light process to form a required photoresist pattern.
Preferably, the photoresist layer has a thickness of 2.5 ± 1 μm. More preferably, the photoresist layer has a thickness of 2.5 ± 0.5 μm.
Preferably, the photoresist used for the photoresist layer includes any one of a positive photoresist and a negative photoresist.
More preferably, in the step (b), an etching-resistant coating is coated on the surface of the silicon-containing organic coating, and then a thin silicon-containing photoresist layer is coated on the surface of the etching-resistant coating, and a mask pattern is formed on the silicon-containing photoresist layer by lithography.
The silicon-containing photoresist layer is a high silicon-containing photoresist layer.
Preferably, the thickness of the silicon-containing photoresist layer is 0.1-1 μm. More preferably, the photoresist layer has a thickness of 0.2 to 0.5 μm.
Preferably, the etching-resistant coating is a conventional organic etching-resistant material. The thickness is 1-3 μm. More preferably, the thickness of the etching-resistant coating is 1.5-2.5 μm.
The thin silicon-containing photoresist is matched with the etching-resistant coating, and due to the obvious etching difference, the contact type exposure of one-time complete forming can be adopted on the premise of ensuring the photoetching resolution and the process yield, so that the problems that the partition multi-step scanning exposure is required and the process is complex and time-consuming in the conventional projection type exposure are solved, and the production equipment cost is further reduced.
In the step (c), the silicon-containing organic coating is etched by plasma, and the pattern is transferred to the silicon-containing organic coating until the sapphire flat sheet is exposed.
Preferably, the gas for plasma etching contains fluorine, and the silicon-containing organic coating can be etched by adopting a conventional fluorine-containing etching gas atmosphere.
For the step of matching the thin silicon-containing photoresist with the etching-resistant coating, the etching-resistant coating is etched under the protection of the silicon-containing photoresist layer, then the photoresist layer, the etching-resistant coating and the silicon-containing organic coating are etched, and the pattern is transferred to the silicon-containing organic coating, so that the patterned sapphire substrate is obtained.
Preferably, the plasma etching gas for etching the etching-resistant coating is mainly oxygen until the silicon-containing organic coating is exposed, then the etching gas is switched to be the fluorine-containing etching gas atmosphere, and the photoresist layer, the etching-resistant coating and the silicon-containing organic coating are etched until the sapphire flat sheet is exposed.
Compared with the prior art, the invention has the beneficial effects that:
(1) according to the patterned sapphire substrate, the silicon-containing organic coating is formed on the surface of the sapphire flat sheet, the refractive index of the silicon-containing organic coating is lower than that of sapphire, the light scattering effect of the substrate can be effectively improved, and the light emitting efficiency of an LED is further improved;
(2) according to the patterned sapphire substrate, the hardness of the silicon-containing organic coating is lower than that of sapphire, so that the process latitude of photoetching and etching is high, and the production cost can be effectively controlled;
(3) in the preparation method, the silicon-containing organic coating is convenient to coat, and the smoothness and the wide capacity of the surface of the sapphire flat sheet are high.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a scanning electron micrograph of a patterned sapphire substrate formed in accordance with an embodiment of the present invention;
FIG. 2 is a scanning electron micrograph of a patterned sapphire substrate formed in accordance with an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a process for preparing a patterned sapphire substrate in embodiment 1 of the present invention, wherein,
(1) a schematic cross-sectional structure diagram of a silicon-containing organic coating and a photoresist is formed for coating;
(2) forming a cross-sectional structure schematic diagram of a mask pattern on the photoresist layer;
(3) schematic diagram of the cross-sectional structure for transferring the pattern to the silicon-containing organic coating;
fig. 4 is a schematic flow chart of a process for preparing a patterned sapphire substrate according to an embodiment of the present invention, wherein,
(1) a schematic cross-sectional structure diagram of a silicon-containing organic coating, an etching-resistant coating and a photoresist is formed for coating;
(2) forming a cross-sectional structure schematic diagram of a mask pattern on the photoresist layer;
(3) is a schematic cross-sectional structure diagram for transferring a pattern to an etching-resistant coating;
(4) is a schematic view of the cross-sectional structure of the pattern transferred to the silicon-containing organic coating after the etching is completed.
Reference numerals:
1-sapphire flat sheet; 2-a silicon-containing organic coating; 3-a photoresist layer;
4-etching resistant coating; 21-a patterned silicon-containing organic coating; 31-post-lithography photoresist layer.
Detailed Description
The technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings and the detailed description, but those skilled in the art will understand that the following described embodiments are some, not all, of the embodiments of the present invention, and are only used for illustrating the present invention, and should not be construed as limiting the scope of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention. The examples, in which specific conditions are not specified, were conducted under conventional conditions or conditions recommended by the manufacturer. The reagents or instruments used are not indicated by the manufacturer, and are all conventional products available commercially.
Example 1
Please refer to fig. 3, which is a schematic view of a flow structure of a process for preparing a patterned sapphire substrate according to the present embodiment, wherein (1) is a schematic view of a cross-sectional structure of a silicon-containing organic coating and a photoresist formed by coating; (2) forming a cross-sectional structure schematic diagram of a mask pattern on the photoresist layer; (3) is a schematic view of the cross-sectional structure of the pattern transferred to the silicon-containing organic coating after the etching is completed.
The preparation method of the patterned sapphire substrate in the embodiment includes the following steps:
(a) coating the surface of the sapphire flat sheet 1 to form a silicon-containing organic coating 2; in particular, the method comprises the following steps of,
(a1) carrying out purification pretreatment on the surface of the sapphire plain film 1: placing the sapphire flat sheet 1 in trichloroethane, carrying out ultrasonic cleaning for 10min, then placing in acetone, and carrying out ultrasonic cleaning for 2 min; washing with deionized water, soaking in sulfuric acid and nitric acid at a volume ratio of 1: 1 for 10min, washing with deionized water, and drying to obtain purified sapphire flat sheet 1;
(a2) coating a silicon-containing organic material (structural formula shown in the specification) on the surface of the purified sapphire flat sheet 1 by a spin coating method, and after the coating is finished, baking for 10min at 180 ℃ for curing to remove a solvent to form a uniform silicon-containing organic coating 2 with the thickness of 2.3 mu m;
the structural formula of the silicon-containing organic material is as follows:
n is 60 to 80.
(b) Coating photoresist on the surface of the silicon-containing organic coating 2 to form a photoresist layer 3, and photoetching to form a mask pattern; in particular, the method comprises the following steps of,
the surface of the silicon-containing organic coating layer 2 thus formed was coated with a photoresist SUN-125PSS (Fuchafang Taike microelectronics materials Co., Ltd.) by spin coating, prebaked at 100 ℃ for 90 seconds, and the solvent was removed to form a photoresist layer 3 having a thickness of 2.5 μm, as shown in FIG. 3 (1); exposing with a stepper exposure machine at 120ms exposure, and developing in TMAH aqueous solution with mass fraction of 2.38% to form a cross-sectional structure shown in (2) of FIG. 3;
(c) etching the silicon-containing organic coating 2 under the protection of the photoresist layer 31 after the photoetching, transferring the pattern to the silicon-containing organic coating, and removing the photoresist to obtain the patterned sapphire substrate; specifically, the method comprises the following steps:
using conventional fluorine-containing etching gases, e.g. CF4And etching the photoresist layer 31 and the silicon-containing organic coating 2 after the photoetching, and transferring the pattern to the silicon-containing organic coating 2 until the sapphire flat sheet 1 is exposed, wherein the silicon-containing organic coating 2 is etched into a patterned silicon-containing organic coating 21 formed on the surface of the sapphire flat sheet 1, as shown in fig. 3 (3).
In the patterned sapphire substrate, the structure of the patterned silicon-containing organic coating 21 is not limited to this, and the mask pattern can be adjusted according to actual requirements, so as to obtain patterned sapphire substrates with different shapes.
Scanning electron micrographs of the patterned sapphire substrate formed using this example are shown in fig. 1 and 2.
Example 2
Please refer to fig. 4, which is a schematic view of a flow structure of a process for preparing a patterned sapphire substrate according to the present embodiment, wherein (1) is a schematic view of a cross-sectional structure of a silicon-containing organic coating, an etching-resistant coating and a photoresist formed by coating; (2) forming a cross-sectional structure schematic diagram of a mask pattern on the photoresist layer; (3) is a schematic cross-sectional structure diagram for transferring a pattern to an etching-resistant coating; (4) is a schematic view of the cross-sectional structure of the pattern transferred to the silicon-containing organic coating after the etching is completed.
The preparation method of the patterned sapphire substrate in the embodiment includes the following steps:
(a) coating the surface of the sapphire flat sheet 1 to form a silicon-containing organic coating 2; in particular, the method comprises the following steps of,
(a1) carrying out purification pretreatment on the surface of the sapphire plain film 1: placing the sapphire flat sheet 1 in trichloroethane, carrying out ultrasonic cleaning for 10min, then placing in acetone, and carrying out ultrasonic cleaning for 2 min; washing with deionized water, soaking in sulfuric acid and nitric acid at a volume ratio of 1: 1 for 10min, washing with deionized water, and drying to obtain purified sapphire flat sheet 1;
(a2) coating a silicon-containing organic material (structural formula shown in the specification) on the surface of the purified sapphire flat sheet 1 by a spin coating method, and after the coating is finished, baking for 10min at 200 ℃ for curing to remove a solvent to form a uniform silicon-containing organic coating 2 with the thickness of 2.3 mu m;
the structural formula of the silicon-containing organic material is as follows:
m + n is 20-40.
(b) Coating an etching-resistant coating on the surface of the silicon-containing organic coating 2, then coating a photoresist layer on the surface of the etching-resistant coating, and photoetching the photoresist layer to form a mask pattern; in particular, the method comprises the following steps of,
(b1) coating bismaleimide resin BMI-1500 (manufacturer: Designer polymers company) on the surface of the silicon-containing organic coating 2 by a spin coating method, and after the coating is finished, baking for 2min at 210 ℃ for curing to remove the solvent to form a uniform and compact etching-resistant coating 4 with the thickness of 2 mu m;
(b2) a photoresist SUN-365iHM (Fuchafang Tanke microelectronics materials Co., Ltd.) was applied on the surface of the etching-resistant coating 4 by spin coating, and prebaking was carried out at 60 ℃ for 90 seconds to remove the solvent, thereby forming a photoresist layer 3 having a thickness of 0.2 μm, as shown in FIG. 4 (1); exposing with a contact exposure machine at an exposure of 80mj, baking at 130 deg.C for 1min, and developing in TMAH aqueous solution with mass fraction of 2.38% to form a cross-sectional structure shown in FIG. 4 (2);
(c) etching the etching-resistant coating 4 under the protection of the photoetching photoresist layer 31, then etching the photoetching photoresist layer 31, the etching-resistant coating 4 and the silicon-containing organic coating 2, and transferring the pattern to the silicon-containing organic coating 2 to obtain the patterned sapphire substrate; in particular, the method comprises the following steps of,
etching the etching-resistant coating 4 with oxygen as a main etching gas under the protection of the photoresist layer 31 after the photolithography, and forming a structure as shown in fig. 4 (3); then switching the etching gas composition to CF4Mainly, the silicon-containing photoresist layer 3, the silicon-containing organic coating 2 and the etching-resistant coating 4 are etched, and the pattern is transferred to the silicon-containing organic coating 2 until the sapphire flat sheet 1 is exposed, at this time, the silicon-containing organic coating 2 is etched into the patterned silicon-containing organic coating 21 formed on the surface of the sapphire flat sheet 1, and a cross-sectional structure shown in fig. 4(4) is formed.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (9)
1. A patterned sapphire substrate, comprising a sapphire flat sheet and a patterned silicon-containing organic coating formed on the surface of the sapphire flat sheet;
the silicon content in the silicon-containing organic coating is 20-45%;
the refractive index of the silicon-containing organic coating is less than or equal to 1.7;
the silicon-containing organic coating is mainly formed by heating and curing silicon-containing resin and a curing agent;
the main component of the silicon-containing organic coating is one or a mixture solution of more of polysiloxane resin, polysilsesquioxane resin, modified siloxane resin and the like;
the preparation method of the graphical sapphire substrate comprises the following steps:
(a) coating the surface of the sapphire flat sheet to form a silicon-containing organic coating;
(b) coating photoresist on the surface of the silicon-containing organic coating to form a photoresist layer, and photoetching to form a mask pattern;
(c) etching the silicon-containing organic coating under the protection of the photoresist layer, transferring the pattern to the silicon-containing organic coating, and removing the photoresist to obtain the patterned sapphire substrate;
in the step (a), coating a silicon-containing organic material on the surface of a sapphire flat sheet, and heating and curing to form a silicon-containing organic coating;
in the step (b), firstly coating an etching-resistant coating on the surface of the silicon-containing organic coating, then coating a photoresist layer on the surface of the etching-resistant coating, and photoetching the photoresist layer to form a mask pattern;
forming a mask pattern on the photoresist layer by baking, exposing and developing;
the etching-resistant coating is an organic etching-resistant material;
the photoresist layer is a high silicon-containing photoresist layer;
in the step (c), the etching-resistant coating is etched under the protection of the photoresist layer, then the photoresist layer, the etching-resistant coating and the silicon-containing organic coating are etched, and the pattern is transferred to the silicon-containing organic coating to obtain the patterned sapphire substrate;
transferring the pattern to the silicon-containing organic coating by plasma etching the silicon-containing organic coating in said step (c).
2. The patterned sapphire substrate of claim 1, wherein the silicon-containing organic coating has a refractive index of 1.3-1.7.
3. The patterned sapphire substrate of claim 1, wherein the etch-resistant coating has a thickness of 1-3 μ ι η.
4. The patterned sapphire substrate of claim 1, wherein the etch-resistant coating has a thickness of 1.5-2.5 μm.
5. The patterned sapphire substrate of claim 1, wherein the photoresist layer has a thickness of 0.1-1 um.
6. The patterned sapphire substrate of claim 1, wherein the photoresist layer has a thickness of 0.2-0.5 um.
7. The patterned sapphire substrate of claim 1, wherein the silicon-containing organic coating has a thickness of 2.3 ± 1 μ ι η.
8. The patterned sapphire substrate of claim 1, wherein the silicon-containing organic coating has a thickness of 2.3 ± 0.5 μ ι η.
9. The patterned sapphire substrate of claim 1, wherein in step (c) the pattern is transferred to the silicon-containing organic coating by plasma etching the silicon-containing organic coating until the sapphire flat sheet is exposed.
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