CN102087484A - Method and system for photoengraving graphical sapphire substrate - Google Patents
Method and system for photoengraving graphical sapphire substrate Download PDFInfo
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- CN102087484A CN102087484A CN 201010606758 CN201010606758A CN102087484A CN 102087484 A CN102087484 A CN 102087484A CN 201010606758 CN201010606758 CN 201010606758 CN 201010606758 A CN201010606758 A CN 201010606758A CN 102087484 A CN102087484 A CN 102087484A
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Abstract
The invention relates to a method for photoengraving a graphical sapphire substrate. The method comprises the following steps of: carrying out spin coating treatment on a substrate to be photoengraved; aligning and mounting a mask plate and the substrate and setting a projection ratio for projecting a graph of the mask plate to the substrate through a lens control module; regionally projecting and exposing in the projection ratio according to the preset exposure conditions; and developing and processing the substrate. The invention also relates to a system for photoengraving the graphical substrate, comprising a spin coating module for carrying out the spin coating treatment on the substrate to be photoengraved, a mask mounting module for aligning and mounting the mask plate and the substrate, the lens control module for setting the projection ratio for projecting the graph of the mask plate to the substrate, an exposure module for regionally projecting and exposing in the projection ratio according to the preset exposure conditions and a developing module for developing and processing the substrate. The method and the system provided by the invention photoengrave the graphical substrate through graphical projection in a non-contact mode and avoid the defects of low resolution, low production efficiency and low graphical consistency of the system for photoengraving and exposing the graphical substrate.
Description
Technical field
The present invention relates to Sapphire Substrate and make the field, more particularly, relate to a kind of photoetching method and system of graphic sapphire substrate.
Background technology
Present domestic most enterprises are in making graphical Sapphire Substrate process, what the photolithographic exposure system used mostly is contact photoetching machine, because the photoetching that is equal proportion is shifted, cause the figure live width not high, more than the dimension of picture 2 μ m, resolution is low, throughput rate is low, the low yield that causes of figure consistance descends.
Summary of the invention
The technical problem to be solved in the present invention is, at the defective that the photolithographic exposure systemic resolution is low, throughput rate is low, the figure consistance is low of the graphic sapphire substrate of prior art, provide a kind of photoetching method and system that adopts noncontact, realizes the graphic sapphire substrate by graphic projection.
The technical solution adopted for the present invention to solve the technical problems is: construct a kind of photoetching method of graphic sapphire substrate, spare glue comprising step: S1, the substrate for the treatment of photoetching and handle; S2, mask plate and described substrate alignment are installed, and the projection ratio of the graphic projection that sets described mask plate by camera lens control group to the described substrate; S3, the default conditions of exposure of basis carry out the subregion projection exposure in described projection ratio; S4, to the exposure after substrate carry out development treatment.
In the photoetching method of graphic sapphire substrate of the present invention, also comprise step: S11 between described step S1 and the S2, the substrate behind the even glue is carried out baking processing.
In the photoetching method of graphic sapphire substrate of the present invention, default conditions of exposure among the described step S3 comprises time shutter, exposure light intensity, exposure area, camera lens focal plane and projection ratio, wherein the time shutter is 150-300msec, and the exposure light intensity is 300-400mw/cm
2, the exposure area is 3.5mm*3.5mm-5mm*5mm, the projection ratio is 8: 1-3: 1.
In the photoetching method of graphic sapphire substrate of the present invention, described step S3 comprises: S31, the default conditions of exposure of basis carry out projection exposure in described projection ratio on the exposure area of described substrate; S32, described substrate is moved changing the exposure area of described substrate, repeat S31 and finish until described substrate Zone Full exposure by step printing equipment.
In the photoetching method of graphic sapphire substrate of the present invention, in the photoetching method of graphic sapphire substrate of the present invention, also comprise step: S31 between described step S3 and the step S4, the substrate after the exposure is carried out baking processing.
The invention still further relates to a kind of etching system of graphic sapphire substrate, comprising even rubber moulding piece: the substrate that is used to treat photoetching spare the glue processing; Mask installed module: be used for mask plate and described substrate alignment are installed; Camera lens control group; Be installed between described mask plate and the described substrate projection ratio of the graphic projection that is used to set described mask plate to the described substrate; Exposure module: carry out the subregion projection exposure in described projection ratio according to default conditions of exposure; And visualization module: be used for the substrate after the exposure is carried out development treatment.
In the etching system of graphic sapphire substrate of the present invention, the etching system of described graphic sapphire substrate also comprises: first bake module: be used for the substrate behind the even glue is carried out baking processing.
In the etching system of graphic sapphire substrate of the present invention, described default conditions of exposure comprises time shutter, exposure light intensity, exposure area, camera lens focal plane and projection ratio; Wherein the time shutter is 150-300msec, and the exposure light intensity is 300-400mw/cm
2, the exposure area is 3.5mm*3.5mm-5mm*5mm, the projection ratio is 8: 1-3: 1.
In the etching system of graphic sapphire substrate of the present invention, described exposure module comprises: the ratio exposing unit: be used for carrying out projection exposure according to default conditions of exposure in described projection ratio on the exposure area of described substrate; And stepping unit: be used for described substrate being moved to change the exposure area of described substrate by step printing equipment.
In the etching system of graphic sapphire substrate of the present invention, the etching system of described graphic sapphire substrate also comprises: second bake module: be used for the substrate after the exposure is carried out baking processing.
Implement the photoetching method and the system of graphic sapphire substrate of the present invention, have following beneficial effect: mask plate need not to contact with sinking to the bottom directly, the direct transmissive mask plate of light arrives camera lens control group, just can realize the transfer of litho pattern projection in proportion through camera lens control group, as much as possible figure is accomplished minimum, also avoided simultaneously the damage of the mask plate that the photoresist haftplatte causes, and exposure accuracy satisfies the requirement of sub-micron rank fully, process repeatability and stability are improved.
Substrate behind the even glue carries out baking processing and can effectively remove contained solvent in the photoresist, strengthens the adhesion of photoresist, discharges the stress in the photoresist film.Default conditions of exposure can be realized better lithographic results.Step printing makes regional exposure more accurate.Substrate after the exposure carries out baking processing to reduce standing wave effect.
Description of drawings
The invention will be further described below in conjunction with drawings and Examples, in the accompanying drawing:
Fig. 1 is the process flow diagram of first preferred embodiment of the photoetching method of graphic sapphire substrate of the present invention;
Fig. 2 is the process flow diagram of second preferred embodiment of the photoetching method of graphic sapphire substrate of the present invention;
Fig. 3 is the process flow diagram of the 3rd preferred embodiment of the photoetching method of graphic sapphire substrate of the present invention;
Fig. 4 is the process flow diagram of the 4th preferred embodiment of the photoetching method of graphic sapphire substrate of the present invention;
Fig. 5 is the structural representation of first preferred embodiment of the etching system of graphic sapphire substrate of the present invention;
Fig. 6 is the structural representation of second preferred embodiment of the etching system of graphic sapphire substrate of the present invention;
Fig. 7 is the structural representation of the 3rd preferred embodiment of the etching system of graphic sapphire substrate of the present invention;
Fig. 8 is the structural representation of the 4th preferred embodiment of the etching system of graphic sapphire substrate of the present invention;
Fig. 9 adopts the photoetching method of graphic sapphire substrate of the present invention to carry out the configuration of surface figure of the graphic sapphire substrate after the photoetching.
Embodiment
In order to make purpose of the present invention, technical scheme and advantage clearer,, the present invention is further elaborated below in conjunction with drawings and Examples.Should be appreciated that specific embodiment described herein only in order to explanation the present invention, and be not used in qualification the present invention.
Process flow diagram at first preferred embodiment of the photoetching method of graphic sapphire substrate of the present invention shown in Figure 1; The photoetching method of described graphic sapphire substrate starts from step 100, arrive subsequently next step 101, the substrate for the treatment of photoetching is spared glue and is handled; Arrive subsequently next step 102, mask plate and described substrate alignment are installed, and the projection ratio of the graphic projection that sets described mask plate by camera lens control group to the described substrate; Arrive subsequently next step 103, carry out the subregion projection exposure according to default conditions of exposure in described projection ratio; Arrive subsequently next step 104, to the exposure after substrate carry out development treatment; Final method ends at step 105.In the making patterned substrate process commonly used at present, what the photolithographic exposure system used mostly is contact photoetching machine, owing to be the photoetching transfer of equal proportion, causes the figure live width not high, more than the dimension of picture 2 μ m, resolution is low, throughput rate is low, the low yield that causes of figure consistance descends.Mask plate need not directly to contact with substrate when adopting this method to carry out photoetching, the direct transmissive mask plate of light arrives camera lens control group 3, camera lens control group 3 is arranged between substrate and the mask plate by stationary installation, shift to realize litho pattern projection in proportion by the distance between the control of gearing mobile fixture and substrate and the mask plate, as much as possible figure is accomplished minimum, also avoided simultaneously the damage of the mask plate that the photoresist haftplatte causes, and exposure accuracy satisfies the requirement of sub-micron rank fully, and process repeatability and stability are improved.Make the substrate of cylindric figure by lithography, through the inductively coupled plasma lithographic technique, epitaxial growth, chip manufacturing can make chip brightness be improved largely, and brightness improves 30%～80%.The bag shape graphic design of being done is more little, narrower gap, and chip brightness promotes high more.
Process flow diagram at second preferred embodiment of the photoetching method of graphic sapphire substrate of the present invention shown in Figure 2; The photoetching method of described graphic sapphire substrate starts from step 200, arrive subsequently next step 201, the substrate for the treatment of photoetching is spared glue and is handled; Arrive subsequently next step 202, the substrate behind the even glue is carried out baking processing; Arrive subsequently next step 203, mask plate and described substrate alignment are installed, and the projection ratio of the graphic projection that sets described mask plate by camera lens control group to the described substrate; Arrive subsequently next step 204, carry out the subregion projection exposure according to default conditions of exposure in described projection ratio; Arrive subsequently next step 205, to the exposure after substrate carry out development treatment; Final method ends at step 206.Substrate behind the even glue carries out baking processing and can effectively remove contained solvent in the photoresist, strengthens the adhesion of photoresist, discharges the stress in the photoresist film.
As the preferred embodiment of the photoetching method of graphic sapphire substrate of the present invention, the default conditions of exposure among the wherein said step S3 comprises time shutter, exposure light intensity, exposure area, camera lens focal plane and projection ratio.Wherein the time shutter is 150-300msec, and the exposure light intensity is 300-400mw/cm
2, the exposure area is 3.5mm*3.5mm-5mm*5mm, the projection ratio is 8: 1-3: 1.What this method adopted is that subregion exposes in proportion, therefore time shutter and exposure light intensity were set to guarantee the effect of exposure before exposure, by the transfer between the step printing device realization exposure area, definite good best camera lens focal plane and projection ratio are to guarantee the effect of exposure after each simultaneously the transfer.
Process flow diagram at the 3rd preferred embodiment of the photoetching method of graphic sapphire substrate of the present invention shown in Figure 3; The photoetching method of described graphic sapphire substrate starts from step 300, arrive subsequently next step 301, the substrate for the treatment of photoetching is spared glue and is handled; Arrive subsequently next step 302, mask plate and described substrate alignment are installed, and the projection ratio of the graphic projection that sets described mask plate by camera lens control group to the described substrate; Arrive subsequently next step 303, carry out the subregion projection exposure according to default conditions of exposure in described projection ratio; Arrive subsequently next step 304, to the exposure after substrate carry out baking processing; Arrive subsequently next step 305, to the exposure after substrate carry out development treatment; Final method ends at step 306.Substrate after the exposure carries out baking processing to reduce standing wave effect.
Process flow diagram at the 4th preferred embodiment of the photoetching method of graphic sapphire substrate of the present invention shown in Figure 4; The photoetching method of described graphic sapphire substrate starts from step 400, arrive subsequently next step 401, the substrate for the treatment of photoetching is spared glue and is handled; Arrive subsequently next step 402, mask plate and described substrate alignment are installed, and the projection ratio of the graphic projection that sets described mask plate by camera lens control group to the described substrate; Arrive subsequently next step 403, on the exposure area of described substrate, carry out projection exposure according to default conditions of exposure in described projection ratio; Arrive subsequently next step 404, by step printing equipment described substrate is moved changing the exposure area of described substrate, repeating step 403 is finished until described substrate Zone Full exposure.Arrive subsequently next step 405, to the exposure after substrate carry out development treatment; Final method ends at step 406.Owing to the size of mask plate and the quality control reason of photoetching, can't once carry out the exposing operation of full wafer substrate, step printing makes regional exposure more accurate, all will redefine the camera lens focal plane and the effect of projection ratio to guarantee to expose of camera lens control group the best after substrate being moved at every turn.
The invention still further relates to a kind of etching system of graphic sapphire substrate, in the structural representation of first preferred embodiment of the etching system of graphic sapphire substrate of the present invention shown in Figure 5, the etching system of described graphic sapphire substrate comprises even rubber moulding piece 1, mask installed module 2, camera lens control group 3, exposure module 4 and visualization module 5, and even rubber moulding piece 1 is used to treat the substrate of photoetching and spare the glue processing; Mask installed module 2 is used for mask plate and described substrate alignment are installed; Camera lens control group 3 is installed between described mask plate and the described substrate, the projection ratio of the graphic projection that is used to set described mask plate to the described substrate; Exposure module 4 is used for carrying out the subregion projection exposure according to default conditions of exposure in described projection ratio; Visualization module 5 is used for the substrate after the exposure is carried out development treatment.In the making patterned substrate process commonly used at present, what the photolithographic exposure system used mostly is contact photoetching machine, owing to be the photoetching transfer of equal proportion, causes the figure live width not high, more than the dimension of picture 2 μ m, resolution is low, throughput rate is low, the low yield that causes of figure consistance descends.Mask plate need not directly to contact with substrate when adopting native system to carry out photoetching, the direct transmissive mask plate of light arrives camera lens control group 3, camera lens control group 3 is arranged between substrate and the mask plate by stationary installation, shift to realize litho pattern projection in proportion by the distance between the control of gearing mobile fixture and substrate and the mask plate, as much as possible figure is accomplished minimum, also avoided simultaneously the damage of the mask plate that the photoresist haftplatte causes, and exposure accuracy satisfies the requirement of sub-micron rank fully, and process repeatability and stability are improved.Make the substrate of cylindric figure by lithography, through the inductively coupled plasma lithographic technique, epitaxial growth, chip manufacturing can make chip brightness be improved largely, and brightness improves 30%～80%.The bag shape graphic design of being done is more little, narrower gap, and chip brightness promotes high more.
In the structural representation of second preferred embodiment of the etching system of graphic sapphire substrate of the present invention shown in Figure 6, the etching system of described graphic sapphire substrate comprises that also first bake module, 6, the first bake module 6 are used for the substrate behind the even glue is carried out baking processing.Substrate behind the even glue carries out baking processing by first bake module 6 and can effectively remove contained solvent in the photoresist, strengthens the adhesion of photoresist, discharges the stress in the photoresist film.
As the preferred embodiment of the etching system of graphic sapphire substrate of the present invention, described default conditions of exposure comprises time shutter, exposure light intensity, exposure area, camera lens focal plane and projection ratio.Wherein the time shutter is 150-300msec, and the exposure light intensity is 300-400mw/cm
2, the exposure area is 3.5mm*3.5mm-5mm*5mm, the projection ratio is 8: 1-3: 1.What native system adopted is that subregion exposes in proportion, therefore time shutter and exposure light intensity were set to guarantee the effect of exposure before exposure, by the transfer between the step printing device realization exposure area, definite good best camera lens focal plane and projection ratio are to guarantee the effect of exposure after each simultaneously the transfer.
In the structural representation of the 3rd preferred embodiment of the etching system of graphic sapphire substrate of the present invention shown in Figure 7, the etching system of described graphic sapphire substrate also comprises second bake module 7; Second bake module 7 is used for the substrate after the exposure is carried out baking processing.Substrate after the exposure carries out baking processing to reduce standing wave effect.
In the structural representation of the 4th preferred embodiment of the etching system of graphic sapphire substrate of the present invention shown in Figure 8, exposure module 4 comprises ratio exposing unit 41 and stepping unit 42, and ratio exposing unit 41 is used for carrying out projection exposure according to default conditions of exposure in described projection ratio on the exposure area of described substrate; Stepping unit 42 is used for by step printing equipment described substrate being moved to change the exposure area of described substrate.Owing to the size of mask plate and the quality control reason of photoetching, can't once carry out the exposing operation of full wafer substrate, step printing makes regional exposure more accurate, all will redefine the camera lens focal plane and the effect of projection ratio to guarantee to expose of camera lens control group the best after substrate being moved at every turn.
Below by specific embodiment the photoetching method of graphic sapphire substrate of the present invention and the implementation process of system are described:
1, Sapphire Substrate is placed on the automatic sol evenning machine, photoresist drops in the middle of the substrate, and after second, the rotating speed with 3000rpm quickens rotation to sol evenning machine again, and photoresist is evenly thrown away with the rotating speed low speed rotation 5-10 of 500rpm.Gluing thickness is between 0.7～3um.
2, Sapphire Substrate is placed on the vacuum hot plate, hot plate temperature is between 80～110 ℃, toasts 30～60 seconds; Remove contained solvent in the photoresist, strengthen the adhesion of photoresist; Discharge the stress in the photoresist film.
3, the Sapphire Substrate that will toast before the exposure is placed on the cold drawing and cools off.
4, substrate and mask plate are packed into stationary installation has individual reference mark on the work stage of litho machine, it is regarded as the initial point of coordinate system, respectively mask plate and Sapphire Substrate is aimed at this reference mark.
5, set the stepping accuracy of exposure device, in the 150-300msec scope, select a fixing time shutter, directly determine the optimum lens focal plane with the step of 0.1-0.5 μ m then.
6, regulate the light intensity that is evenly distributed, make (largest light intensity-minimum intensity of light)/(largest light intensity+minimum intensity of light), thereby determine the optimum exposure light intensity less than 2%.
7, select suitable exposure area, according to fixing projection ratio exposure.For example the exposure light intensity is set at 300-400mw/cm
2, the time shutter is set at 150-300msec, and exposure area each time is (3.5-5) * (3.5-5mm), and fixedly the projecting figure ratio is 5: 1, projection 11-15 zone on each Sapphire Substrate.
8, the substrate after the exposure is placed in hot plate or the baking oven and toasts, and between hot plate or oven temperature were set 110～130 ℃, stoving time 40～90 seconds reduced standing wave effect.
9, the substrate after will toasting is placed in the automatic processing machine photoresist developing.The nozzles spray developer solution developed for 10～30 seconds at substrate surface, and substrate after the development fully, with deionized water rinsing substrate and rotation drying, forms uniform litho pattern (as shown in Figure 9) this moment with 100～500rpm low speed rotation on photoresist simultaneously.
Adopt the photoetching method of graphic sapphire substrate of the present invention and hemispherical figure that system makes on Sapphire Substrate can reach submicron figure, the throughput rate height, the figure consistance is good especially, is evenly distributed.And the figure of making is more little, and brightness promotes obvious more, and its reason is that the figure that etches forms 2 D photon crystal thus, and light can form scattering effect and improve the epitaxial loayer defective when epitaxial loayer enters graph substrate, thereby improves light emission rate.The diameter that can make by the present invention is the hemispherical figure of evenly arranging of 0.5～8 μ m, and the hemisphere height is 0.25～4 μ m.
The above only is embodiments of the invention; be not so limit claim of the present invention; every equivalent structure transformation that utilizes instructions of the present invention and accompanying drawing content to be done, or directly or indirectly be used in other relevant technical fields, all in like manner be included in the scope of patent protection of the present invention.
Claims (10)
1. the photoetching method of a graphic sapphire substrate is characterized in that, comprises step:
S1, the substrate for the treatment of photoetching are spared glue and are handled;
S2, mask plate and described substrate alignment are installed, and the projection ratio of the graphic projection that sets described mask plate by camera lens control group to the described substrate;
S3, the default conditions of exposure of basis carry out the subregion projection exposure in described projection ratio;
S4, to the exposure after substrate carry out development treatment.
2. the photoetching method of graphic sapphire substrate according to claim 1 is characterized in that, also comprises step between described step S1 and the S2:
S11, the substrate behind the even glue is carried out baking processing.
3. the photoetching method of graphic sapphire substrate according to claim 1 is characterized in that, the default conditions of exposure among the described step S3 comprises time shutter, exposure light intensity, exposure area, camera lens focal plane and projection ratio; Wherein the time shutter is 150-300msec, and the exposure light intensity is 300-400mw/cm
2, the exposure area is 3.5mm*3.5mm-5mm*5mm, the projection ratio is 8: 1-3: 1.
4. the photoetching method of graphic sapphire substrate according to claim 1 is characterized in that, described step S3 comprises:
S31, the default conditions of exposure of basis carry out projection exposure in described projection ratio on the exposure area of described substrate;
S32, described substrate is moved changing the exposure area of described substrate, repeat S31 and finish until described substrate Zone Full exposure by step printing equipment.
5. the photoetching method of graphic sapphire substrate according to claim 1 is characterized in that, also comprises step between described step S3 and the step S4:
S31, to the exposure after substrate carry out baking processing.
6. the etching system of a graphic sapphire substrate is characterized in that, comprising:
Even rubber moulding piece (1): the substrate that is used to treat photoetching spare the glue processing;
Mask installed module (2): be used for mask plate and described substrate alignment are installed;
Camera lens control group (3); Be installed between described mask plate and the described substrate projection ratio of the graphic projection that is used to set described mask plate to the described substrate;
Exposure module (4): be used for carrying out the subregion projection exposure in described projection ratio according to default conditions of exposure; And
Visualization module (5): be used for the substrate after the exposure is carried out development treatment.
7. the etching system of graphic sapphire substrate according to claim 6 is characterized in that, the etching system of described graphic sapphire substrate also comprises:
First bake module (6): be used for the substrate behind the even glue is carried out baking processing.
8. the etching system of graphic sapphire substrate according to claim 6 is characterized in that, described default conditions of exposure comprises time shutter, exposure light intensity, exposure area, camera lens focal plane and projection ratio; Wherein the time shutter is 150-300msec, and the exposure light intensity is 300-400mw/cm
2, the exposure area is 3.5mm*3.5mm-5mm*5mm, the projection ratio is 8: 1-3: 1.
9. the etching system of graphic sapphire substrate according to claim 6 is characterized in that, described exposure module (4) comprising:
Ratio exposing unit (41): be used on the exposure area of described substrate, carrying out projection exposure in described projection ratio according to default conditions of exposure; And
Stepping unit (42): be used for described substrate being moved to change the exposure area of described substrate by step printing equipment.
10. the etching system of graphic sapphire substrate according to claim 6 is characterized in that, the etching system of described graphic sapphire substrate also comprises:
Second bake module (7): be used for the substrate after the exposure is carried out baking processing.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102378494A (en) * | 2011-10-31 | 2012-03-14 | 深南电路有限公司 | Resistance welding processing method for circuit board |
| US8841207B2 (en) | 2011-04-08 | 2014-09-23 | Lux Material Co., Ltd. | Reusable substrates for electronic device fabrication and methods thereof |
| CN106601601A (en) * | 2017-02-06 | 2017-04-26 | 福建中晶科技有限公司 | Photoetching method of graphical sapphire substrate |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1790170A (en) * | 2004-12-17 | 2006-06-21 | Asml荷兰有限公司 | Lithographic apparatus, analyser plate, subassembly, method of measuring parameters and patterning device |
| CN101515625A (en) * | 2009-03-31 | 2009-08-26 | 上海蓝光科技有限公司 | Method for preparing LED chip substrate structure |
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2010
- 2010-12-24 CN CN 201010606758 patent/CN102087484B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1790170A (en) * | 2004-12-17 | 2006-06-21 | Asml荷兰有限公司 | Lithographic apparatus, analyser plate, subassembly, method of measuring parameters and patterning device |
| CN101515625A (en) * | 2009-03-31 | 2009-08-26 | 上海蓝光科技有限公司 | Method for preparing LED chip substrate structure |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8841207B2 (en) | 2011-04-08 | 2014-09-23 | Lux Material Co., Ltd. | Reusable substrates for electronic device fabrication and methods thereof |
| CN102378494A (en) * | 2011-10-31 | 2012-03-14 | 深南电路有限公司 | Resistance welding processing method for circuit board |
| CN102378494B (en) * | 2011-10-31 | 2014-03-26 | 深南电路有限公司 | Resistance welding processing method for circuit board |
| CN106601601A (en) * | 2017-02-06 | 2017-04-26 | 福建中晶科技有限公司 | Photoetching method of graphical sapphire substrate |
| CN106601601B (en) * | 2017-02-06 | 2023-11-17 | 福建中晶科技有限公司 | Photoetching method of patterned sapphire substrate |
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