CN102479688B - Method of wafer surface photoresistance edge removal - Google Patents
Method of wafer surface photoresistance edge removal Download PDFInfo
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- CN102479688B CN102479688B CN2010105660508A CN201010566050A CN102479688B CN 102479688 B CN102479688 B CN 102479688B CN 2010105660508 A CN2010105660508 A CN 2010105660508A CN 201010566050 A CN201010566050 A CN 201010566050A CN 102479688 B CN102479688 B CN 102479688B
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Abstract
The invention provides a method of wafer surface photoresistance edge removal in the semiconductor manufacture technology field. The method comprises the following steps: acquiring a minimum linewidth of the semiconductor device made of wafer; when the minimum linewidth of the semiconductor device is larger than 90 nm, employing an edge bead removal (EBR) method or/and a wafer edge exposure (WEE) method with a diaphragm aperture length of a first fixed length and a diaphragm aperture width of a first fixed width to remove photoresistance of a first width at a wafer edge; when the minimum linewidth of the semiconductor device is less than or equal to 90 nm, carrying out at least the following steps: employing a wafer edge exposure (WEE) method with a diaphragm aperture length of a second fixed length and a diaphragm aperture width of a second fixed width to remove the photoresistance of a second width at the wafer edge, wherein, the first fixed width is larger than the second fixed width. According to the invention, through turning down an aperture value in the WEE method, a Rainbow defect area decreases from 200 micrometers to 50 micrometers, thus a Rainbow defect has no influence on performance of the semiconductor device, and the method has the advantages of simpleness and low cost.
Description
Technical field
What the present invention relates to is a kind of method of technical field of manufacturing semiconductors, particularly be a kind of method of wafer surface photoresistance edge removal.
Background technology
Development along with integrated circuit, dwindling of the increase of transistorized dense degree and critical size, the defect produced in photo-etching technological process is to yield of devices, and quality has important directly related impact, and wherein clean the and definition of edge of wafer starts to become more important.In photo-etching technological process, photoresistance is spin-coated on crystal column surface, and the accumulation of photoresistance is arranged in the upper and lower surface near the edge of wafer place; In follow-up etching or ion implantation technology process, these photoresistances that are deposited in edge of wafer probably come in contact collision with the mechanically actuated operation arm of wafer, thereby cause the generation of particle contamination.So, usually can carry out wafer surface photoresistance edge removal in photo-etching technological process to avoid the generation of the problems referred to above.
In prior art, the method for wafer surface photoresistance edge removal mainly is divided into: chemical trimming method (EBR, edge bead removal) and wafer edge exposure method (WEE, wafer edge expoSure).Chemistry trimming method is to utilize wafer in being coated with the photoresistance process, usually to crystal round fringes, sprays solvent to eliminate the crystal round fringes photoresistance.The shortcoming of the method is that the trimming time is long, the solvent consumables cost is high and photoresistance trimming irregularity, may cause wafer defect to affect process rate.The edge exposure method is to use the WEE apparatus platform after being coated with photoresistance and before exposure, that is: by wafer by vacuum suction to rotation platform, fix a set of uv-exposure camera lens and a diaphragm above crystal round fringes, the uv-exposure camera lens to produce the Uniform Illumination hot spot of a certain size size, then utilizes the rotation of rotating platform to realize wafer edge exposure through diaphragm.Compare chemical trimming method, the wafer edge exposure method has that production efficiency is high, installation cost is low, and process is easy to control and the regular advantage such as level and smooth of trimming shape.
As shown in Figure 1, because there is inhomogeneous problem in lens in light source, therefore the light of rims of the lens can scatter to non-trimming zone through diaphragm, cause actual trimming zone to be greater than and want the trimming zone, be finally to produce an inclined plane on residual photoresistance edge, make the surface irregularity of residual photoresistance.Inclined plane is in the situation that illumination can present colour (Rainbow Color), so this defect that the WEE method produces is called as rainbow (Rainbow) defect.The length of prior art diaphragm used in the trimming process mostly is 10mm, width is 4mm, and the width on the inclined plane therefore produced on residual photoresistance edge is about 200um.When on mask, the live width of pattern is greater than 90nm, described Rainbow defect can be ignored to the performance of semiconductor device.
But, development along with technology, the size of semiconductor device is more and more less, correspondingly, on mask, the size of pattern is also more and more less, when on mask, the live width of pattern is less than 90nm, the impact of Rainbow defect just highlights day by day, when there is pattern in the Rainbow defect area after especially follow-up development, due to the wafer at destroyed pattern place now, so the Rainbow defect area can make the pattern existed on it be destroyed, become imperfect or disappear fully, thereby have a strong impact on etching and the cleaning of back, the performance of the semiconductor device that final impact is prepared.
In order to address the above problem, prior art has proposed to add optical path adjustment device between light source and wafer, described optical path adjustment device comprises: chromium seam and collector lens group, the collector lens group is comprised of some collector lenses, the function that in this device, the chromium seam serves as diaphragm, light after the chromium seam is after collector lens group optically focused, when the light of light source emission arrives wafer, the light of scattering is just fewer, thereby the width of Rainbow defect area is smaller, improved the quality of crystal round fringes pattern, but the cost of optical path adjustment device is very high, be unfavorable for actual use.
Therefore, in semi-conductive manufacture process, need a kind of wafer surface photoresistance edge removal method that can reduce simply and effectively the width of Rainbow defect area.
Summary of the invention
Problem to be solved by this invention is: in the wafer surface photoresistance edge removal process, improve the quality of crystal round fringes pattern, reduce the width of Rainbow defect area.
For addressing the above problem, the invention provides a kind of method of wafer surface photoresistance edge removal, comprising:
Obtain the minimum feature of the semiconductor device of wafer manufacture;
When the minimum feature of described semiconductor device is greater than 90nm, adopt chemical trimming method or/and the wafer edge exposure method that aperture of the diaphragm length is the first regular length, width is the first fixed width is removed the photoresistance of crystal round fringes the first width;
When the minimum feature of described semiconductor device is less than or equal to 90nm, at least comprise: adopting aperture of the diaphragm length is the photoresistance that wafer edge exposure method that the second regular length, width are the second fixed width is removed crystal round fringes the second width; Wherein: the first fixed width is greater than the second fixed width, and the first fixed width is greater than the first width, and the second fixed width is greater than the second width, and the wish trimming width of crystal round fringes is more than or equal to the first width, and the wish trimming width of crystal round fringes is greater than the second width.
Alternatively, the span of described the first regular length is 5-10mm, and the span of described the first fixed width is 2-4mm.
Alternatively, the span of described the second regular length is 1-10mm, and the span of described the second fixed width is 0.4-2mm.
Alternatively, when the described minimum feature when described semiconductor device is less than or equal to 90nm, comprising: first adopt chemical trimming method to remove the photoresistance of crystal round fringes the 3rd width; Adopting aperture of the diaphragm length is the photoresistance that the second regular length, the width wafer edge exposure method that is the second fixed width is removed crystal round fringes the second width again, wherein: the 3rd width is greater than the second width, wish trimming width the 3rd width and the second width and that equal crystal round fringes.
Alternatively, when the described minimum feature when described semiconductor device is less than or equal to 90nm, comprising: first adopt chemical trimming method to remove the photoresistance of crystal round fringes the 4th width; Then adopting aperture of the diaphragm length is the photoresistance that the second regular length, the width wafer edge exposure method that is the second fixed width is removed crystal round fringes the 5th width; Finally adopting aperture of the diaphragm length is the photoresistance that the second regular length, the width wafer edge exposure method that is the second fixed width is removed crystal round fringes the second width, wherein: the 4th width is greater than the 5th width, the 5th width is more than or equal to the second width, the second fixed width is greater than the 5th width, the 4th width, the 5th width and wish trimming width the second width and that equal crystal round fringes.
Alternatively, when the described minimum feature when described semiconductor device is less than or equal to 90nm, comprising: adopting aperture of the diaphragm length is the photoresistance that wafer edge exposure method that the first regular length, width are the first fixed width is removed crystal round fringes the 3rd width; Adopt again the photoresistance of wafer edge exposure method removal crystal round fringes the second width that aperture of the diaphragm length is the second regular length, width the second fixed width, wherein: the first fixed width is greater than the 3rd width, the 3rd width is greater than the second width, wish trimming width the second width and the 3rd width and that equal crystal round fringes.
Alternatively, when the described minimum feature when described semiconductor device is less than or equal to 90nm, comprising: first adopting aperture of the diaphragm length is the photoresistance that the first regular length, the width wafer edge exposure method that is the first fixed width is removed crystal round fringes the 4th width; Then adopting aperture of the diaphragm length is the photoresistance that the second regular length, the width wafer edge exposure method that is the second fixed width is removed crystal round fringes the 5th width; Finally adopting aperture of the diaphragm length is the photoresistance that the second regular length, the width wafer edge exposure method that is the second fixed width is removed crystal round fringes the second width, wherein: the first fixed width is greater than the 4th width, the 4th width is greater than the 5th width, the 5th width is greater than or equal to the second width, the second fixed width is greater than the 5th width, the 4th width, the 5th width and wish trimming width the second width and that equal crystal round fringes.
Alternatively, described chemical trimming method adopts propylene glycol monomethyl ether (PGME) or propylene glycol methyl ether acetate (PGMEA) or cyclohexanone as chemical trimming agent.
Compared with prior art, the present invention has the following advantages: at first the minimum feature of trimming wafer place semiconductor device is wanted in judgement, when minimum feature is greater than 90nm, adopts prior art to carry out wafer surface photoresistance edge removal; When minimum feature is less than or equal to 90nm, by in the end in step, turning the aperture value in the WEE method down, make the Rainbow defect area be down to 50 μ m from 200 μ m, thereby the performance that makes the Rainbow defect be less than or equal to the semiconductor device of 90nm for live width does not have impact substantially, and method is simple, cost is low.
The accompanying drawing explanation
Fig. 1 produces the schematic diagram of Rainbow defect in prior art;
Fig. 2 is the schematic flow sheet of wafer surface photoresistance edge removal method in embodiment 1;
The schematic diagram that Fig. 3 is WEE method in embodiment 1;
Fig. 4 is the schematic flow sheet of wafer surface photoresistance edge removal method in embodiment 2;
Fig. 5 is the schematic flow sheet of wafer surface photoresistance edge removal method in embodiment 3;
Fig. 6 is the schematic flow sheet of wafer surface photoresistance edge removal method in embodiment 4.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail.
Set forth in the following description a lot of details so that fully understand the present invention, implement but the present invention can also adopt other to be different from alternate manner described here, so the present invention has not been subject to the restriction of following public specific embodiment.
Just as described in the background section, it is step indispensable in fabrication of semiconductor device that wafer surface photoresistance edge removal is processed, but along with constantly dwindling of pattern line-width on mask, the WEE method is removed the caused Rainbow defect of crystal round fringes becomes the major reason that affects semiconductor device, therefore, the Rainbow defect that is necessary to take simple and effective measure to improve and causes in the wafer surface photoresistance edge removal process, make the width in Rainbow zone obviously descend.
Therefore, when manufacturing semiconductor device, in order addressing the above problem, to the invention provides the method for wafer surface photoresistance edge removal, to comprise:
Obtain the minimum feature of the semiconductor device of wafer manufacture;
When the minimum feature of described semiconductor device is greater than 90nm, adopt chemical trimming method or/and the wafer edge exposure method that aperture of the diaphragm length is the first regular length, width is the first fixed width is removed the photoresistance of crystal round fringes the first width;
When the minimum feature of described semiconductor device is less than or equal to 90nm, at least comprise: adopting aperture of the diaphragm length is the photoresistance that wafer edge exposure method that the second regular length, width are the second fixed width is removed crystal round fringes the second width; Wherein: the first fixed width is greater than the second fixed width, and the first fixed width is greater than the first width, and the second fixed width is greater than the second width, and the wish trimming width of crystal round fringes is more than or equal to the first width, and the wish trimming width of crystal round fringes is greater than the second width.
In said process, the span of described the first regular length is 5-10mm, and the span of described the first fixed width is 2-4mm; The span of described the second regular length is 1-10mm, and the span of described the second fixed width is 0.4-2mm.
At first the present invention judges the minimum feature of wanting trimming wafer place semiconductor device, when minimum feature is greater than 90nm, adopts prior art to carry out wafer surface photoresistance edge removal; When minimum feature is less than or equal to 90nm, first adopt prior art to remove the edge photoresistance of most of width, but in the end in step, turn the aperture value in the WEE method down, make the Rainbow defect area be down to 50 μ m from 200 μ m, thereby the performance that makes the Rainbow defect be less than or equal to the semiconductor device of 90nm for live width does not have impact substantially, and method is simple, cost is low.
Below by 4 embodiment, be elaborated, the crystal round fringes that the purpose of following examples is all is 3mm in order to remove width.
Embodiment 1
As shown in Figure 2, the present embodiment specifically comprises the following steps:
S100, obtain the minimum feature of the semiconductor device that wafer manufactures, and the minimum feature that obtains semiconductor device described in the present embodiment is 90nm.
S110, adopt chemical trimming method to remove the photoresistance that the crystal round fringes width is 2.5mm.
The present embodiment is when adopting chemical trimming method to remove the photoresistance that the crystal round fringes width is 2.5mm, specifically comprise: use chemical trimming agent in to wafer, being coated with the process of photoresistance, the present embodiment is by spraying propylene glycol monomethyl ether (PGME) to eliminate the photoresistance of crystal round fringes 2.5mm to edge.
In other embodiments of the invention, can also adopt propylene glycol methyl ether acetate (PGMEA) or cyclohexanone etc. as chemical trimming agent.
S120, utilize the WEE method that aperture of the diaphragm length is 1mm for 10mm, width to remove the photoresistance that the crystal round fringes width is 0.5mm.
As shown in Figure 3, utilize aperture of the diaphragm length for 10mm, the WEE method that width is 1mm is removed the photoresistance that the crystal round fringes width is 0.5mm, specifically comprise: after wafer is coated with photoresistance and before exposure, by wafer by vacuum suction to rotation platform, fix a set of uv-exposure camera lens above crystal round fringes, and a diaphragm is set below described uv-exposure camera lens, being saved as a length on described diaphragm is 10mm, the rectangle transmission region that width is 1mm, described transmission region be centered close to described uv-exposure camera lens under, then utilize rotating platform to adjust the marginal position of wafer and the relative position at transmission region center, on the edge that the UV-irradiation that makes to see through transmission region is 0.5mm at the wafer width.Like this by the rotation wafer while making ultraviolet light see through described transmission region, the ultraviolet light seen through has just been removed the crystal round fringes that width is 0.5mm.
So far, just removed the crystal round fringes that width is 3mm.
The present embodiment is after the minimum feature of learning semiconductor device prepared by wafer equals 90nm, at first remove most of edge of wafer by chemical trimming method, then remove the remaining edge of wafer by the WEE method of small-bore, can remove like this irregularity type of the photoresistance trimming caused due to chemical side washing.Known again by comparison diagram 1 and Fig. 3, the present embodiment method makes the Rainbow defect area greatly reduce, thereby does not affect the performance of semiconductor device.
Embodiment 2
As shown in Figure 4, the present embodiment specifically comprises the following steps:
S200, obtain the minimum feature of the semiconductor device that wafer manufactures, and the minimum feature that obtains semiconductor device described in the present embodiment is 90nm.
S210, adopting aperture of the diaphragm length is that the WEE method that 10mm, width are 4mm is removed the photoresistance that the crystal round fringes width is 2.7mm.
It is 10mm that the present embodiment adopts aperture of the diaphragm length, the WEE method that width is 4mm is removed the photoresistance that the crystal round fringes width is 2.7mm, specifically comprise: after wafer is coated with photoresistance and before exposure, by wafer by vacuum suction to rotation platform, fix a set of uv-exposure camera lens above crystal round fringes, and a diaphragm is set below described uv-exposure camera lens, on described diaphragm, exist one long be 10mm, wide is the rectangle transmission region of 4mm, described transmission region be centered close to described uv-exposure camera lens under, then utilize rotating platform to adjust the marginal position of wafer and the relative position at transmission region center, on the edge that the UV-irradiation that makes to see through transmission region is 2.7mm at the wafer width.Like this by the rotation wafer while making ultraviolet light see through described transmission region, the ultraviolet light seen through has just been removed the crystal round fringes that width is 2.7mm.
S220, utilize the WEE method that aperture of the diaphragm length is 0.6mm for 5mm, width to remove the photoresistance that the crystal round fringes width is 0.3mm.
The present embodiment utilizes aperture of the diaphragm length for 5mm, the WEE method that width is 0.6mm is removed the photoresistance that the crystal round fringes width is 0.3mm, specifically comprise: wafer is sent to the WEE apparatus platform that another has the less aperture of the diaphragm, that is: by wafer by vacuum suction to rotation platform, be fixed wtih another set of uv-exposure camera lens above crystal round fringes, and there is a diaphragm in this cover uv-exposure camera lens below, on this diaphragm, exist one long be 5mm, the rectangle transmission region of wide 0.6mm, described transmission region be centered close to described uv-exposure camera lens under, then utilize rotating platform to adjust the marginal position of wafer and the relative position at transmission region center, on the edge that the UV-irradiation that makes to see through transmission region is 0.3mm at the wafer width.Like this by the rotation wafer while making ultraviolet light see through described transmission region, the ultraviolet light seen through has just been removed the crystal round fringes that width is 0.3mm.
So far, just removed the crystal round fringes that width is 3mm.
The present embodiment is after the minimum feature of learning semiconductor device prepared by wafer equals 90nm, at first remove most of edge of wafer by wide-aperture WEE method, then remove the remaining edge of wafer by the WEE method of small-bore, make the Rainbow defect area be down to 50 μ m from 200 μ m, thereby the performance that makes the Rainbow defect equal the semiconductor device of 90nm for live width does not have impact substantially.
Embodiment 3
As shown in Figure 5, the present embodiment specifically comprises the following steps:
S300, obtain the minimum feature of the semiconductor device that wafer manufactures, and the minimum feature that obtains semiconductor device described in the present embodiment is 45nm.
S310, adopting aperture of the diaphragm length is that the WEE method that 10mm, width are 4mm is removed the photoresistance that the crystal round fringes width is 2.4mm.
It is 10mm that the present embodiment adopts aperture of the diaphragm length, the WEE method that width is 4mm is removed the photoresistance that the crystal round fringes width is 2.4mm, specifically comprise: after wafer is coated with photoresistance and before exposure, wafer is placed on first WEE apparatus platform, that is: by wafer by vacuum suction to rotation platform, fix a set of uv-exposure camera lens above crystal round fringes, and below described uv-exposure camera lens, the first diaphragm is set, on described the first diaphragm, exist one long be 10mm, wide is the rectangle transmission region of 4mm, described transmission region be centered close to described uv-exposure camera lens under, then utilize rotating platform to adjust the marginal position of wafer and the relative position at transmission region center, on the edge that the UV-irradiation that makes to see through transmission region is 2.4mm at the wafer width.Like this by the rotation wafer while making ultraviolet light see through described transmission region, the ultraviolet light seen through has just been removed the crystal round fringes that width is 2.4mm.
S320, utilize the WEE method that aperture of the diaphragm length is 0.6mm for 5mm, width to remove the photoresistance that the crystal round fringes width is 0.4mm.
The present embodiment utilizes aperture of the diaphragm length for 5mm, the WEE method that width is 0.6mm is removed the photoresistance that the crystal round fringes width is 0.4mm, specifically comprise: wafer is sent to second WEE apparatus platform with less aperture of the diaphragm, that is: by wafer by vacuum suction to rotation platform, fix a set of uv-exposure camera lens above crystal round fringes, and below described uv-exposure camera lens, the second diaphragm is set, on described the second diaphragm, exist one long be 5mm, the rectangle transmission region of wide 0.6mm, described transmission region be centered close to described uv-exposure camera lens under, then utilize rotating platform to adjust the marginal position of wafer and the relative position at transmission region center, on the edge that the UV-irradiation that makes to see through transmission region is 0.4mm at the wafer width.Like this by the rotation wafer while making ultraviolet light see through described transmission region, the ultraviolet light seen through has just been removed the crystal round fringes that width is 0.4mm.
S330, utilize the WEE method that aperture of the diaphragm length is 0.6mm for 5mm, width to remove the photoresistance that the crystal round fringes width is 0.2mm.
The present embodiment utilizes the WEE method that aperture of the diaphragm length is 0.6mm for 5mm, width to remove the photoresistance that the crystal round fringes width is 0.2mm, specifically comprise: continue the WEE apparatus platform that utilizes second to there is the less aperture of the diaphragm, comprise: utilize rotating platform to adjust the marginal position and the relative position at transmission region center of wafer, make on edge that the UV-irradiation through transmission region is 0.2mm at the wafer width.Like this by the rotation wafer while making ultraviolet light see through described transmission region, the ultraviolet light seen through has just been removed the crystal round fringes that width is 0.2mm.
So far, just removed the crystal round fringes that width is 3mm.
In another embodiment of the present invention, step S310 can also be replaced with in the process that is coated with photoresistance to wafer and adopt chemical trimming method to remove the photoresistance that the crystal round fringes width is 2.4mm, step S300, S320 and step S330 are constant.
Identical with embodiment 1, the Rainbow defect area of the present embodiment can further reduce.
Embodiment 4
As shown in Figure 6, the present embodiment specifically comprises the following steps:
S400, obtain the minimum feature of the semiconductor device that wafer manufactures, and the minimum feature that obtains semiconductor device described in the present embodiment is 120nm.
S410, directly adopting aperture of the diaphragm length is that the WEE method that 10mm, width are 4mm is removed the photoresistance that the crystal round fringes width is 3mm.Be specially: after wafer is coated with photoresistance and before exposure, by wafer by vacuum suction to rotation platform, fix a set of uv-exposure camera lens above crystal round fringes, and a diaphragm is set below described uv-exposure camera lens, on described diaphragm, exist one long be 10mm, wide be the rectangle transmission region of 4mm, described transmission region be centered close to described uv-exposure camera lens under, then utilize rotating platform to adjust the marginal position and the relative position at transmission region center of wafer, make on edge that the UV-irradiation through transmission region is 3mm at the wafer width.Like this by the rotation wafer while making ultraviolet light see through described transmission region, the ultraviolet light seen through has just been removed the crystal round fringes that width is 3mm.
Because the semi-conductive minimum feature in wafer place in the present embodiment is 120nm, therefore can directly adopt wafer surface photoresistance edge removal method of the prior art, and the Rainbow defect finally obtained can not affect the performance of semiconductor device.It should be noted that, the present embodiment can also adopt other wafer surface photoresistance edge removal methods of the prior art, such as: can directly in the process that is coated with photoresistance to wafer, adopt chemical trimming method to remove the crystal round fringes of 3mm; Or first in the process to wafer painting photoresistance, adopt chemical trimming method to remove the edge photoresistance of 2mm, then after wafer is coated with photoresistance and before exposure, employing aperture diaphragm length is that the large aperture WEE method that 10mm, width are 4mm is removed edge photoresistance of remaining 1mm etc.
Above-described embodiment is all at first to judge the minimum feature of wanting trimming wafer place semiconductor device, when minimum feature is greater than 90nm, adopts prior art to carry out wafer surface photoresistance edge removal; When minimum feature is less than or equal to 90nm, first adopt prior art to remove the edge photoresistance of most of width, but in the end in step, adopt the WEE method of small-bore, make the Rainbow defect area be down to 50 μ m from 200 μ m, thereby the performance that makes the Rainbow defect be less than or equal to the semiconductor device of 90nm for live width does not have impact substantially, and method is simple, cost is low.
Although oneself discloses the present invention as above with preferred embodiment, the present invention not is defined in this.Any those skilled in the art, without departing from the spirit and scope of the present invention, all can make various changes or modifications, so protection scope of the present invention should be as the criterion with the claim limited range.
Claims (8)
1. the method for a wafer surface photoresistance edge removal, is characterized in that, comprising:
Obtain the minimum feature of the semiconductor device of wafer manufacture;
When the minimum feature of described semiconductor device is greater than 90nm, adopt chemical trimming method or/and the wafer edge exposure method that aperture of the diaphragm length is the first regular length, width is the first fixed width is removed the photoresistance of crystal round fringes the first width;
When the minimum feature of described semiconductor device is less than or equal to 90nm, at least comprise: adopting aperture of the diaphragm length is the photoresistance that wafer edge exposure method that the second regular length, width are the second fixed width is removed crystal round fringes the second width; Wherein: the first fixed width is greater than the second fixed width, and the first fixed width is greater than the first width, and the second fixed width is greater than the second width, and the wish trimming width of crystal round fringes is more than or equal to the first width, and the wish trimming width of crystal round fringes is greater than the second width.
2. the method for wafer surface photoresistance edge removal according to claim 1, is characterized in that, the span of described the first regular length is 5-10mm, and the span of described the first fixed width is 2-4mm.
3. the method for wafer surface photoresistance edge removal according to claim 2, is characterized in that, the span of described the second regular length is 1-10mm, and the span of described the second fixed width is 0.4-2mm.
4. the method for wafer surface photoresistance edge removal according to claim 3, is characterized in that, when the minimum feature of described semiconductor device is less than or equal to 90nm, comprising: first adopt chemical trimming method to remove the photoresistance of crystal round fringes the 3rd width; Adopting aperture of the diaphragm length is the photoresistance that the second regular length, the width wafer edge exposure method that is the second fixed width is removed crystal round fringes the second width again, wherein: the 3rd width is greater than the second width, wish trimming width the 3rd width and the second width and that equal crystal round fringes.
5. the method for wafer surface photoresistance edge removal according to claim 3, is characterized in that, when the minimum feature of described semiconductor device is less than or equal to 90nm, comprising: first adopt chemical trimming method to remove the photoresistance of crystal round fringes the 4th width; Then adopting aperture of the diaphragm length is the photoresistance that the second regular length, the width wafer edge exposure method that is the second fixed width is removed crystal round fringes the 5th width; Finally adopting aperture of the diaphragm length is the photoresistance that the second regular length, the width wafer edge exposure method that is the second fixed width is removed crystal round fringes the second width, wherein: the 4th width is greater than the 5th width, the 5th width is more than or equal to the second width, the second fixed width is greater than the 5th width, the 4th width, the 5th width and wish trimming width the second width and that equal crystal round fringes.
6. the method for wafer surface photoresistance edge removal according to claim 3, it is characterized in that, when the minimum feature of described semiconductor device is less than or equal to 90nm, comprising: adopting aperture of the diaphragm length is the photoresistance that wafer edge exposure method that the first regular length, width are the first fixed width is removed crystal round fringes the 3rd width; Adopting aperture of the diaphragm length is the photoresistance that the second regular length, the width wafer edge exposure method that is the second fixed width is removed crystal round fringes the second width again, wherein: the first fixed width is greater than the 3rd width, the 3rd width is greater than the second width, wish trimming width the second width and the 3rd width and that equal crystal round fringes.
7. the method for wafer surface photoresistance edge removal according to claim 3, it is characterized in that, when the minimum feature of described semiconductor device is less than or equal to 90nm, comprising: first adopting aperture of the diaphragm length is the photoresistance that the first regular length, the width wafer edge exposure method that is the first fixed width is removed crystal round fringes the 4th width; Then adopting aperture of the diaphragm length is the photoresistance that the second regular length, the width wafer edge exposure method that is the second fixed width is removed crystal round fringes the 5th width; Finally adopting aperture of the diaphragm length is the photoresistance that the second regular length, the width wafer edge exposure method that is the second fixed width is removed crystal round fringes the second width, wherein: the first fixed width is greater than the 4th width, the 4th width is greater than the 5th width, the 5th width is greater than or equal to the second width, the second fixed width is greater than the 5th width, the 4th width, the 5th width and wish trimming width the second width and that equal crystal round fringes.
8. according to the method for claim 1 or 4 or 5 described wafer surface photoresistance edge removals, it is characterized in that, described chemical trimming method adopts propylene glycol monomethyl ether or propylene glycol methyl ether acetate or cyclohexanone as chemical trimming agent.
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| CN104991426B (en) * | 2015-08-12 | 2017-03-08 | 西安工业大学 | Multi-beam interference photoetching auxiliary exposure device |
| CN107918250B (en) * | 2016-10-10 | 2020-11-27 | 中芯国际集成电路制造(上海)有限公司 | Photoresist trimming method and photoresist trimming machine in NTD (non-volatile memory) process |
| CN106783548B (en) * | 2016-12-30 | 2020-01-03 | 通富微电子股份有限公司 | Wafer gum application method |
| CN108039316B (en) * | 2017-12-21 | 2020-12-18 | 上海华力微电子有限公司 | Method for removing photoresist on wafer side |
| CN108417476A (en) * | 2018-02-07 | 2018-08-17 | 上海华虹宏力半导体制造有限公司 | Wafer top layer oxide layer processing method |
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