CN102479688A - Method of wafer surface photoresistance edge removal - Google Patents
Method of wafer surface photoresistance edge removal Download PDFInfo
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- CN102479688A CN102479688A CN2010105660508A CN201010566050A CN102479688A CN 102479688 A CN102479688 A CN 102479688A CN 2010105660508 A CN2010105660508 A CN 2010105660508A CN 201010566050 A CN201010566050 A CN 201010566050A CN 102479688 A CN102479688 A CN 102479688A
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Abstract
The invention provides a method of wafer surface photoresistance edge removal in the semiconductor manufacture technology field. The method comprises the following steps: acquiring a minimum linewidth of the semiconductor device made of wafer; when the minimum linewidth of the semiconductor device is larger than 90 nm, employing an edge bead removal (EBR) method or/and a wafer edge exposure (WEE) method with a diaphragm aperture length of a first fixed length and a diaphragm aperture width of a first fixed width to remove photoresistance of a first width at a wafer edge; when the minimum linewidth of the semiconductor device is less than or equal to 90 nm, carrying out at least the following steps: employing a wafer edge exposure (WEE) method with a diaphragm aperture length of a second fixed length and a diaphragm aperture width of a second fixed width to remove the photoresistance of a second width at the wafer edge, wherein, the first fixed width is larger than the second fixed width. According to the invention, through turning down an aperture value in the WEE method, a Rainbow defect area decreases from 200 micrometers to 50 micrometers, thus a Rainbow defect has no influence on performance of the semiconductor device, and the method has the advantages of simpleness and low cost.
Description
Technical field
What the present invention relates to is a kind of method of technical field of manufacturing semiconductors, particularly be a kind of method of crystal column surface photoresistance trimming.
Background technology
Along with development of integrated circuits; Dwindling of the increase of transistorized dense degree and critical size; The defective that produces in the photo-etching technological process is to yield of devices, and quality has important directly related influence, and wherein the cleaning of edge of wafer and definition begin to become more important.In photo-etching technological process, photoresistance is spin-coated on the crystal column surface, in the accumulation that photoresistance is all arranged near the upper and lower surfaces at edge of wafer place; In follow-up etching or ion implantation technology process, these photoresistances that are deposited in edge of wafer come in contact collision with the mechanically actuated operation arm of wafer probably, thereby cause the generation of particle contamination.So, can carry out crystal column surface photoresistance trimming in the photo-etching technological process usually to avoid the generation of the problems referred to above.
The method of crystal column surface photoresistance trimming mainly is divided in the prior art: chemical trimming method (EBR, edge bead removal) and crystal round fringes exposure method (WEE, wafer edge expoSure).Chemistry trimming method is to utilize wafer in being coated with the photoresistance process, usually to the crystal round fringes spraying solvent to eliminate the crystal round fringes photoresistance.The shortcoming of this method is trimming time length, solvent consumables cost height and photoresistance side cut irregularity, possibly cause wafer defect to influence process rate.The edge exposure method is after being coated with photoresistance and before exposure, to use the WEE apparatus platform; That is: wafer is passed through vacuum suction to rotation platform; At crystal round fringes upper fixed one cover uv-exposure camera lens and diaphragm; The uv-exposure camera lens to produce the even illumination hot spot of a certain size size, utilizes the rotation of rotating platform to realize the crystal round fringes exposure through diaphragm then.Compare chemical trimming method, the crystal round fringes exposure method has that production efficiency is high, installation cost is low, and process is easy to the regular advantage such as level and smooth of control and side cut shape.
As shown in Figure 1; Because there is uneven problem in lens in the light source; Therefore the light of rims of the lens can scatter to non-trimming zone through diaphragm; Causing actual trimming zone greater than desiring the trimming zone, finally is on the residual photoresistor edge, to produce an inclined plane, makes the surface irregularity of residual photoresistor.The inclined plane can present colour (Rainbow Color) under the situation of illumination, so this defective that the WEE method produces is called as rainbow (Rainbow) defective.Mostly the length of prior art used diaphragm in the trimming process is that 10mm, width are 4mm, and the width on the inclined plane that therefore on the residual photoresistor edge, produces is about 200um.When the live width of pattern on the mask during greater than 90nm, said Rainbow defective can be ignored to the performance of semiconductor device.
But along with the development of technology, size of semiconductor device is more and more littler; Correspondingly, the size of pattern is also more and more littler on the mask, when the live width of pattern on the mask during less than 90nm; The Rainbow defect influence just highlights day by day, when there is pattern in the Rainbow defect area after the especially follow-up development, because the wafer at destroyed this moment pattern place; So the Rainbow defect area can make the pattern that exists on it destroyed; Become imperfect or complete obiteration, thereby have a strong impact on the etching and the cleaning of back, the performance of the semiconductor device that final influence is prepared.
In order to address the above problem, prior art has proposed between light source and wafer, to add optical path adjustment device, and said optical path adjustment device comprises: chromium seam and collector lens group; The collector lens group is made up of some collector lenses; The function that the chromium seam serves as diaphragm in this device, after the light behind the chromium seam was through collector lens group optically focused, the light of scattering was just fewer when the light of light emitted arrived wafer; Thereby the width of Rainbow defect area is smaller; Improved the quality of crystal round fringes pattern, but the cost of optical path adjustment device is very high, is unfavorable for actual use.
Therefore, in semi-conductive manufacture process, need a kind of crystal column surface photoresistance Deriming method that can reduce the width of Rainbow defect area simply and effectively.
Summary of the invention
Problem to be solved by this invention is: in crystal column surface photoresistance trimming process, improve the quality of crystal round fringes pattern, reduce the width of Rainbow defect area.
For addressing the above problem, the invention provides a kind of method of crystal column surface photoresistance trimming, comprising:
Obtain the minimum feature of the semiconductor device of wafer manufacturing;
When the minimum feature of said semiconductor device during, adopt chemical trimming method or/and aperture of the diaphragm length is first regular length, width is the photoresistance that the crystal round fringes exposure method of first fixed width is removed crystal round fringes first width greater than 90nm;
When the minimum feature of said semiconductor device is less than or equal to 90nm, comprise at least: adopting aperture of the diaphragm length is that second regular length, width are the photoresistance of crystal round fringes exposure method removal crystal round fringes second width of second fixed width; Wherein: first fixed width is greater than second fixed width, and first fixed width is greater than first width, and second fixed width is greater than second width, and the desire trimming width of crystal round fringes is more than or equal to first width, and the desire trimming width of crystal round fringes is greater than second width.
Alternatively, the span of said first regular length is 5-10mm, and the span of said first fixed width is 2-4mm.
Alternatively, the span of said second regular length is 1-10mm, and the span of said second fixed width is 0.4-2mm.
Alternatively, when said minimum feature when said semiconductor device is less than or equal to 90nm, comprising: adopt chemical trimming method to remove the photoresistance of crystal round fringes the 3rd width earlier; Adopting aperture of the diaphragm length again is that second regular length, width are the photoresistance of crystal round fringes exposure method removal crystal round fringes second width of second fixed width; Wherein: the 3rd width is greater than second width, the 3rd width and second width with the desire trimming width that equals crystal round fringes.
Alternatively, when said minimum feature when said semiconductor device is less than or equal to 90nm, comprising: adopt chemical trimming method to remove the photoresistance of crystal round fringes the 4th width earlier; Adopting aperture of the diaphragm length then is that second regular length, width are the photoresistance of crystal round fringes exposure method removal crystal round fringes the 5th width of second fixed width; Adopting aperture of the diaphragm length at last is that second regular length, width are the photoresistance of crystal round fringes exposure method removal crystal round fringes second width of second fixed width; Wherein: the 4th width is greater than the 5th width; The 5th width is more than or equal to second width; Second fixed width is greater than the 5th width, the 4th width, the 5th width and desire trimming width second width and that equal crystal round fringes.
Alternatively, when said minimum feature when said semiconductor device is less than or equal to 90nm, comprising: adopting aperture of the diaphragm length is that first regular length, width are the photoresistance of crystal round fringes exposure method removal crystal round fringes the 3rd width of first fixed width; Adopting aperture of the diaphragm length again is the photoresistance of crystal round fringes exposure method removal crystal round fringes second width of second regular length, width second fixed width; Wherein: first fixed width is greater than the 3rd width; The 3rd width is greater than second width, second width and the 3rd width with the desire trimming width that equals crystal round fringes.
Alternatively; When said minimum feature when said semiconductor device is less than or equal to 90nm, comprising: adopting aperture of the diaphragm length earlier is that first regular length, width are the photoresistance of crystal round fringes exposure method removal crystal round fringes the 4th width of first fixed width; Adopting aperture of the diaphragm length then is that second regular length, width are the photoresistance of crystal round fringes exposure method removal crystal round fringes the 5th width of second fixed width; Adopting aperture of the diaphragm length at last is that second regular length, width are the photoresistance of crystal round fringes exposure method removal crystal round fringes second width of second fixed width; Wherein: first fixed width is greater than the 4th width; The 4th width is greater than the 5th width; The 5th width is greater than or equal to second width, and second fixed width is greater than the 5th width, the 4th width, the 5th width and desire trimming width second width and that equal crystal round fringes.
Alternatively, said chemical trimming method adopts propylene glycol monomethyl ether (PGME) or propylene glycol methyl ether acetate (PGMEA) or cyclohexanone as chemical trimming agent.
Compared with prior art, the present invention has the following advantages: at first judge to desire the minimum feature of trimming wafer place semiconductor device, when minimum feature during greater than 90nm, adopt prior art to carry out crystal column surface photoresistance trimming; When minimum feature is less than or equal to 90nm; Through in the end turning the aperture value in the WEE method down in the step; Make the Rainbow defect area reduce to 50 μ m from 200 μ m; Thereby the performance that makes the Rainbow defective be less than or equal to the semiconductor device of 90nm for live width does not have influence basically, and method is simple, cost is low.
Description of drawings
Fig. 1 is the sketch map that produces the Rainbow defective in the prior art;
Fig. 2 is the schematic flow sheet of crystal column surface photoresistance Deriming method among the embodiment 1;
Fig. 3 is the sketch map of WEE method among the embodiment 1;
Fig. 4 is the schematic flow sheet of crystal column surface photoresistance Deriming method among the embodiment 2;
Fig. 5 is the schematic flow sheet of crystal column surface photoresistance Deriming method among the embodiment 3;
Fig. 6 is the schematic flow sheet of crystal column surface photoresistance Deriming method among the embodiment 4.
Embodiment
For make above-mentioned purpose of the present invention, feature and advantage can be more obviously understandable, does detailed explanation below in conjunction with the accompanying drawing specific embodiments of the invention.
Set forth a lot of details in the following description so that make much of the present invention, implement but the present invention can also adopt other to be different from alternate manner described here, so the present invention has not received the restriction of following disclosed specific embodiment.
Said as the background technology part; It is step indispensable in the fabrication of semiconductor device that crystal column surface photoresistance trimming is handled; But along with constantly dwindling of pattern line-width on the mask, the WEE method is removed the caused Rainbow defective of crystal round fringes becomes the major reason that influences semiconductor device, therefore; Be necessary to take simple and effective measure to improve the Rainbow defective that causes in the crystal column surface photoresistance trimming process, make the width in Rainbow zone obviously descend.
Therefore, when making semiconductor device,, the invention provides the method for crystal column surface photoresistance trimming, comprising in order to address the above problem:
Obtain the minimum feature of the semiconductor device of wafer manufacturing;
When the minimum feature of said semiconductor device during, adopt chemical trimming method or/and aperture of the diaphragm length is first regular length, width is the photoresistance that the crystal round fringes exposure method of first fixed width is removed crystal round fringes first width greater than 90nm;
When the minimum feature of said semiconductor device is less than or equal to 90nm, comprise at least: adopting aperture of the diaphragm length is that second regular length, width are the photoresistance of crystal round fringes exposure method removal crystal round fringes second width of second fixed width; Wherein: first fixed width is greater than second fixed width, and first fixed width is greater than first width, and second fixed width is greater than second width, and the desire trimming width of crystal round fringes is more than or equal to first width, and the desire trimming width of crystal round fringes is greater than second width.
In said process, the span of said first regular length is 5-10mm, and the span of said first fixed width is 2-4mm; The span of said second regular length is 1-10mm, and the span of said second fixed width is 0.4-2mm.
The present invention at first judges the minimum feature of desiring trimming wafer place semiconductor device, when minimum feature during greater than 90nm, adopts prior art to carry out crystal column surface photoresistance trimming; When minimum feature is less than or equal to 90nm; Adopt prior art to remove the edge photoresistance of most of width earlier; But in the end turn the aperture value in the WEE method in the step down; Make the Rainbow defect area reduce to 50 μ m, thereby the performance that makes the Rainbow defective be less than or equal to the semiconductor device of 90nm for live width does not have influence basically, and method is simple, cost is low from 200 μ m.
Be elaborated through 4 embodiment below, the purpose of following examples all is in order to remove the crystal round fringes that width is 3mm.
Embodiment 1
As shown in Figure 2, present embodiment specifically may further comprise the steps:
S100 obtains the minimum feature of the semiconductor device that wafer makes, and the minimum feature that obtains semiconductor device described in the present embodiment is 90nm.
S110, adopting chemical trimming method to remove the crystal round fringes width is the photoresistance of 2.5mm.
Present embodiment is when adopting chemical trimming method removal crystal round fringes width to be the photoresistance of 2.5mm; Specifically comprise: use chemical trimming agent being coated with to wafer in the process of photoresistance, present embodiment is through spraying propylene glycol monomethyl ether (PGME) to eliminate the photoresistance of crystal round fringes 2.5mm to the edge.
In other embodiments of the invention, can also adopt propylene glycol methyl ether acetate (PGMEA) or cyclohexanone etc. as chemical trimming agent.
S120 utilizes aperture of the diaphragm length to remove the photoresistance of crystal round fringes width for 0.5mm for 10mm, width for the WEE method of 1mm.
As shown in Figure 3; Utilize aperture of the diaphragm length to remove the photoresistance of crystal round fringes width for the WEE method of 1mm for 0.5mm for 10mm, width; Specifically comprise: after wafer is coated with photoresistance and before the exposure; Wafer is passed through vacuum suction to rotation platform,, and a diaphragm is set below said uv-exposure camera lens at crystal round fringes upper fixed one cover uv-exposure camera lens; Depositing into a length on the said diaphragm is that 10mm, width are the rectangle transmission region of 1mm; Said transmission region be centered close to said uv-exposure camera lens under, utilize the marginal position of rotating platform adjustment wafer and the relative position at transmission region center then, making the UV-irradiation through transmission region is on the edge of 0.5mm at the wafer width.When making ultraviolet light see through said transmission region through the rotation wafer like this, it is the crystal round fringes of 0.5mm that the ultraviolet light that sees through has just been removed width.
So far, just having removed width is the crystal round fringes of 3mm.
Present embodiment is after the minimum feature of the semiconductor device of learning the wafer preparation equals 90nm; At first remove most of edge of wafer through chemical trimming method; Remove the remaining edge of wafer through the WEE method of small-bore then, can remove like this because the irregularity type that the photoresistance that chemical side washing causes is cut edge.Can know that with Fig. 3 the present embodiment method makes the Rainbow defect area reduce greatly through comparison diagram 1 again, thereby not influence the performance of semiconductor device.
Embodiment 2
As shown in Figure 4, present embodiment specifically may further comprise the steps:
S200 obtains the minimum feature of the semiconductor device that wafer makes, and the minimum feature that obtains semiconductor device described in the present embodiment is 90nm.
S210, adopting aperture of the diaphragm length is that 10mm, width are that to remove the crystal round fringes width be the photoresistance of 2.7mm for the WEE method of 4mm.
It is that 10mm, width are that to remove the crystal round fringes width be the photoresistance of 2.7mm for the WEE method of 4mm that present embodiment adopts aperture of the diaphragm length; Specifically comprise: after wafer is coated with photoresistance and before the exposure; Wafer is passed through vacuum suction to rotation platform; At crystal round fringes upper fixed one cover uv-exposure camera lens; And a diaphragm is set below said uv-exposure camera lens, exist on the said diaphragm one long be 10mm, widely be the rectangle transmission region of 4mm, said transmission region be centered close to said uv-exposure camera lens under; Utilize the marginal position of rotating platform adjustment wafer and the relative position at transmission region center then, making the UV-irradiation through transmission region is on the edge of 2.7mm at the wafer width.When making ultraviolet light see through said transmission region through the rotation wafer like this, it is the crystal round fringes of 2.7mm that the ultraviolet light that sees through has just been removed width.
S220 utilizes aperture of the diaphragm length to remove the photoresistance of crystal round fringes width for 0.3mm for 5mm, width for the WEE method of 0.6mm.
Present embodiment utilizes aperture of the diaphragm length to remove the photoresistance of crystal round fringes width for 0.3mm for 5mm, width for the WEE method of 0.6mm; Specifically comprise: wafer is sent to the WEE apparatus platform that another has the littler aperture of the diaphragm; That is: wafer is passed through vacuum suction to rotation platform; Another set of uv-exposure camera lens in the crystal round fringes upper fixed; And should have a diaphragm in cover uv-exposure camera lens below, exist on this diaphragm one long be the rectangle transmission region of 5mm, wide 0.6mm, said transmission region be centered close to said uv-exposure camera lens under; Utilize the marginal position of rotating platform adjustment wafer and the relative position at transmission region center then, making the UV-irradiation through transmission region is on the edge of 0.3mm at the wafer width.When making ultraviolet light see through said transmission region through the rotation wafer like this, it is the crystal round fringes of 0.3mm that the ultraviolet light that sees through has just been removed width.
So far, just having removed width is the crystal round fringes of 3mm.
Present embodiment is after the minimum feature of the semiconductor device of learning the wafer preparation equals 90nm; At first remove most of edge of wafer through wide-aperture WEE method; Remove the remaining edge of wafer through the WEE method of small-bore then; Make the Rainbow defect area reduce to 50 μ m, thereby the performance that makes the Rainbow defective equal the semiconductor device of 90nm for live width does not have influence basically from 200 μ m.
Embodiment 3
As shown in Figure 5, present embodiment specifically may further comprise the steps:
S300 obtains the minimum feature of the semiconductor device that wafer makes, and the minimum feature that obtains semiconductor device described in the present embodiment is 45nm.
S310, adopting aperture of the diaphragm length is that 10mm, width are that to remove the crystal round fringes width be the photoresistance of 2.4mm for the WEE method of 4mm.
It is that 10mm, width are that to remove the crystal round fringes width be the photoresistance of 2.4mm for the WEE method of 4mm that present embodiment adopts aperture of the diaphragm length; Specifically comprise: after wafer is coated with photoresistance and before the exposure; Wafer is placed on first WEE apparatus platform; That is: wafer is passed through vacuum suction to rotation platform,, and below said uv-exposure camera lens, first diaphragm is set at crystal round fringes upper fixed one cover uv-exposure camera lens; Exist on said first diaphragm one long be 10mm, widely be the rectangle transmission region of 4mm; Said transmission region be centered close to said uv-exposure camera lens under, utilize the marginal position of rotating platform adjustment wafer and the relative position at transmission region center then, making the UV-irradiation through transmission region is on the edge of 2.4mm at the wafer width.When making ultraviolet light see through said transmission region through the rotation wafer like this, it is the crystal round fringes of 2.4mm that the ultraviolet light that sees through has just been removed width.
S320 utilizes aperture of the diaphragm length to remove the photoresistance of crystal round fringes width for 0.4mm for 5mm, width for the WEE method of 0.6mm.
Present embodiment utilizes aperture of the diaphragm length to remove the photoresistance of crystal round fringes width for 0.4mm for 5mm, width for the WEE method of 0.6mm; Specifically comprise: wafer is sent to second WEE apparatus platform with littler aperture of the diaphragm; That is: wafer is passed through vacuum suction to rotation platform; At crystal round fringes upper fixed one cover uv-exposure camera lens; And below said uv-exposure camera lens, second diaphragm is set, exist on said second diaphragm one long be the rectangle transmission region of 5mm, wide 0.6mm, said transmission region be centered close to said uv-exposure camera lens under; Utilize the marginal position of rotating platform adjustment wafer and the relative position at transmission region center then, making the UV-irradiation through transmission region is on the edge of 0.4mm at the wafer width.When making ultraviolet light see through said transmission region through the rotation wafer like this, it is the crystal round fringes of 0.4mm that the ultraviolet light that sees through has just been removed width.
S330 utilizes aperture of the diaphragm length to remove the photoresistance of crystal round fringes width for 0.2mm for 5mm, width for the WEE method of 0.6mm.
Present embodiment utilizes aperture of the diaphragm length to remove the photoresistance of crystal round fringes width for 0.2mm for 5mm, width for the WEE method of 0.6mm; Specifically comprise: continue the WEE apparatus platform that utilizes second to have the littler aperture of the diaphragm; Comprise: utilize the marginal position of rotating platform adjustment wafer and the relative position at transmission region center, making the UV-irradiation through transmission region is on the edge of 0.2mm at the wafer width.When making ultraviolet light see through said transmission region through the rotation wafer like this, it is the crystal round fringes of 0.2mm that the ultraviolet light that sees through has just been removed width.
So far, just having removed width is the crystal round fringes of 3mm.
In another embodiment of the present invention, can also step S310 be replaced with in the process that is coated with photoresistance to wafer that to adopt chemical trimming method to remove the crystal round fringes width be the photoresistance of 2.4mm, step S300, S320 and step S330 are constant.
Identical with embodiment 1, the Rainbow defect area of present embodiment can further reduce.
Embodiment 4
As shown in Figure 6, present embodiment specifically may further comprise the steps:
S400 obtains the minimum feature of the semiconductor device that wafer makes, and the minimum feature that obtains semiconductor device described in the present embodiment is 120nm.
S410, directly adopting aperture of the diaphragm length is that 10mm, width are that to remove the crystal round fringes width be the photoresistance of 3mm for the WEE method of 4mm.Be specially: after wafer is coated with photoresistance and before the exposure; Wafer is passed through vacuum suction to rotation platform; At crystal round fringes upper fixed one cover uv-exposure camera lens; And a diaphragm is set below said uv-exposure camera lens, exist on the said diaphragm one long be 10mm, widely be the rectangle transmission region of 4mm, said transmission region be centered close to said uv-exposure camera lens under; Utilize the marginal position of rotating platform adjustment wafer and the relative position at transmission region center then, making the UV-irradiation through transmission region is on the edge of 3mm at the wafer width.When making ultraviolet light see through said transmission region through the rotation wafer like this, it is the crystal round fringes of 3mm that the ultraviolet light that sees through has just been removed width.
Owing to wafer in the present embodiment belongs to semi-conductive minimum feature is 120nm, therefore can directly adopt crystal column surface photoresistance Deriming method of the prior art, and the Rainbow defective that obtains at last can not influence the performance of semiconductor device.Need to prove that present embodiment can also adopt other crystal column surface photoresistance Deriming methods of the prior art, such as: can directly in the process that is coated with photoresistance to wafer, adopt chemical trimming method to remove the crystal round fringes of 3mm; Or in the process that is coated with photoresistance to wafer, adopting earlier chemical trimming method to remove the edge photoresistance of 2mm, employing aperture diaphragm length is that 10mm, width are that the large aperture WEE method of 4mm is removed edge photoresistance of remaining 1mm or the like after wafer is coated with photoresistance and before the exposure again.
The foregoing description all is at first to judge the minimum feature of desiring trimming wafer place semiconductor device, when minimum feature during greater than 90nm, adopts prior art to carry out crystal column surface photoresistance trimming; When minimum feature is less than or equal to 90nm; Adopt prior art to remove the edge photoresistance of most of width earlier; But in the end adopt the WEE method of small-bore in the step; Make the Rainbow defect area reduce to 50 μ m, thereby the performance that makes the Rainbow defective be less than or equal to the semiconductor device of 90nm for live width does not have influence basically, and method is simple, cost is low from 200 μ m.
Though oneself discloses the present invention as above with preferred embodiment, the present invention is defined in this.Any those skilled in the art are not breaking away from the spirit and scope of the present invention, all can do various changes and modification, so protection scope of the present invention should be as the criterion with claim institute restricted portion.
Claims (8)
1. the method for a crystal column surface photoresistance trimming is characterized in that, comprising:
Obtain the minimum feature of the semiconductor device of wafer manufacturing;
When the minimum feature of said semiconductor device during, adopt chemical trimming method or/and aperture of the diaphragm length is first regular length, width is the photoresistance that the crystal round fringes exposure method of first fixed width is removed crystal round fringes first width greater than 90nm;
When the minimum feature of said semiconductor device is less than or equal to 90nm, comprise at least: adopting aperture of the diaphragm length is that second regular length, width are the photoresistance of crystal round fringes exposure method removal crystal round fringes second width of second fixed width; Wherein: first fixed width is greater than second fixed width, and first fixed width is greater than first width, and second fixed width is greater than second width, and the desire trimming width of crystal round fringes is more than or equal to first width, and the desire trimming width of crystal round fringes is greater than second width.
2. the method for crystal column surface photoresistance trimming according to claim 1 is characterized in that the span of said first regular length is 5-10mm, and the span of said first fixed width is 2-4mm.
3. the method for crystal column surface photoresistance trimming according to claim 2 is characterized in that the span of said second regular length is 1-10mm, and the span of said second fixed width is 0.4-2mm.
4. the method for crystal column surface photoresistance trimming according to claim 3 is characterized in that, when said minimum feature when said semiconductor device is less than or equal to 90nm, comprising: adopt chemical trimming method to remove the photoresistance of crystal round fringes the 3rd width earlier; Adopting aperture of the diaphragm length again is that second regular length, width are the photoresistance of crystal round fringes exposure method removal crystal round fringes second width of second fixed width; Wherein: the 3rd width is greater than second width, the 3rd width and second width with the desire trimming width that equals crystal round fringes.
5. the method for crystal column surface photoresistance trimming according to claim 3 is characterized in that, when said minimum feature when said semiconductor device is less than or equal to 90nm, comprising: adopt chemical trimming method to remove the photoresistance of crystal round fringes the 4th width earlier; Adopting aperture of the diaphragm length then is that second regular length, width are the photoresistance of crystal round fringes exposure method removal crystal round fringes the 5th width of second fixed width; Adopting aperture of the diaphragm length at last is that second regular length, width are the photoresistance of crystal round fringes exposure method removal crystal round fringes second width of second fixed width; Wherein: the 4th width is greater than the 5th width; The 5th width is more than or equal to second width; Second fixed width is greater than the 5th width, the 4th width, the 5th width and desire trimming width second width and that equal crystal round fringes.
6. the method for crystal column surface photoresistance trimming according to claim 3; It is characterized in that; When said minimum feature when said semiconductor device is less than or equal to 90nm, comprising: adopting aperture of the diaphragm length is that first regular length, width are the photoresistance of crystal round fringes exposure method removal crystal round fringes the 3rd width of first fixed width; Adopting aperture of the diaphragm length again is that second regular length, width are the photoresistance of crystal round fringes exposure method removal crystal round fringes second width of second fixed width; Wherein: first fixed width is greater than the 3rd width; The 3rd width is greater than second width, second width and the 3rd width with the desire trimming width that equals crystal round fringes.
7. the method for crystal column surface photoresistance trimming according to claim 3; It is characterized in that; When said minimum feature when said semiconductor device is less than or equal to 90nm, comprising: adopting aperture of the diaphragm length earlier is that first regular length, width are the photoresistance of crystal round fringes exposure method removal crystal round fringes the 4th width of first fixed width; Adopting aperture of the diaphragm length then is that second regular length, width are the photoresistance of crystal round fringes exposure method removal crystal round fringes the 5th width of second fixed width; Adopting aperture of the diaphragm length at last is that second regular length, width are the photoresistance of crystal round fringes exposure method removal crystal round fringes second width of second fixed width; Wherein: first fixed width is greater than the 4th width; The 4th width is greater than the 5th width; The 5th width is greater than or equal to second width, and second fixed width is greater than the 5th width, the 4th width, the 5th width and desire trimming width second width and that equal crystal round fringes.
8. according to the method for claim 1 or 4 or 5 described crystal column surface photoresistance trimmings, it is characterized in that said chemical trimming method adopts propylene glycol monomethyl ether or propylene glycol methyl ether acetate or cyclohexanone as chemical trimming agent.
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| CN104991426A (en) * | 2015-08-12 | 2015-10-21 | 西安工业大学 | Multi-beam interference photoetching auxiliary exposure device |
| CN106783548A (en) * | 2016-12-30 | 2017-05-31 | 通富微电子股份有限公司 | A kind of gum method of wafer |
| CN107918250A (en) * | 2016-10-10 | 2018-04-17 | 中芯国际集成电路制造(上海)有限公司 | Photoresist Deriming method and photoresist trimming board in NTD techniques |
| CN108039316A (en) * | 2017-12-21 | 2018-05-15 | 上海华力微电子有限公司 | Wafer side removing photoresistance method |
| CN108417476A (en) * | 2018-02-07 | 2018-08-17 | 上海华虹宏力半导体制造有限公司 | Wafer top layer oxide layer processing method |
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| CN104991426A (en) * | 2015-08-12 | 2015-10-21 | 西安工业大学 | Multi-beam interference photoetching auxiliary exposure device |
| CN107918250A (en) * | 2016-10-10 | 2018-04-17 | 中芯国际集成电路制造(上海)有限公司 | Photoresist Deriming method and photoresist trimming board in NTD techniques |
| CN107918250B (en) * | 2016-10-10 | 2020-11-27 | 中芯国际集成电路制造(上海)有限公司 | Photoresist trimming method and photoresist trimming machine in NTD (non-volatile memory) process |
| CN106783548A (en) * | 2016-12-30 | 2017-05-31 | 通富微电子股份有限公司 | A kind of gum method of wafer |
| CN108039316A (en) * | 2017-12-21 | 2018-05-15 | 上海华力微电子有限公司 | Wafer side removing photoresistance method |
| CN108039316B (en) * | 2017-12-21 | 2020-12-18 | 上海华力微电子有限公司 | Method for removing photoresist on wafer side |
| CN108417476A (en) * | 2018-02-07 | 2018-08-17 | 上海华虹宏力半导体制造有限公司 | Wafer top layer oxide layer processing method |
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