CN106783548A - A kind of gum method of wafer - Google Patents
A kind of gum method of wafer Download PDFInfo
- Publication number
- CN106783548A CN106783548A CN201611264362.7A CN201611264362A CN106783548A CN 106783548 A CN106783548 A CN 106783548A CN 201611264362 A CN201611264362 A CN 201611264362A CN 106783548 A CN106783548 A CN 106783548A
- Authority
- CN
- China
- Prior art keywords
- wafer
- glued membrane
- outward flange
- exposure
- gum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 27
- 239000012528 membrane Substances 0.000 claims abstract description 86
- 239000000463 material Substances 0.000 claims abstract description 5
- 239000003292 glue Substances 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 2
- 238000004140 cleaning Methods 0.000 claims 1
- 239000000853 adhesive Substances 0.000 abstract description 3
- 230000001070 adhesive effect Effects 0.000 abstract description 3
- 238000005520 cutting process Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000004026 adhesive bonding Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005242 forging Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention discloses a kind of gum method of wafer.The gum method of the wafer includes：The wafer of gum is treated in offer；The glued membrane that offer is made up of photosensitive material；Glued membrane is pasted on the dorsal part of wafer；Glued membrane is exposed along the outward flange of wafer；The glued membrane after exposure is cleaned using developer solution, to remove the glued membrane of the outward flange periphery of wafer.The present invention can form the glued membrane of complete attaching in the dorsal part of wafer, it is to avoid leak adhesive occur.
Description
Technical field
The present invention relates to technical field of semiconductor encapsulation, the gum method of more particularly to a kind of wafer.
Background technology
At present, the gum coating method for generally using is brush coating.As shown in figure 1, disk 11 is arranged on the lower section of template,
Gluing is carried out at the back side of disk 11.Wherein, fixture 12 is used for clamping wafer 11, and fixture 12 is by the part at the back side of disk 11
Clamp, causing the outward flange of disk 11 cannot carry out gluing.Disk 11 after gum is attached on carrier film and is cut, due to circle
There is no gluing at the dorsal edge of piece 11, causing the edge of disk 11 cannot intactly fit.In the mistake that disk 11 is cut
Cheng Zhong, the chip do not fitted can fly out, and then influence blade cutting process, for example, produce the problems such as forging a knife.
Prior art is by the way of cutting, it is easy to which the edge chip disengaging carrier film for forming disk 11 causes cutter
Damage, follow-up other PROCESS FOR TREATMENTs are relative complex and effect is poor carrying out, as shown in Fig. 2 the edge of disk 11 occur it is similar
Flash.
Then can also be attached to for carrier film on the disk 11 after gum by prior art by cutting carrier film in advance, be carried
Film and disk 11 produce skew, as shown in Figure 3.
The content of the invention
The present invention solves the technical problem of a kind of gum method of wafer is provided, wafer can be avoided from leakage occur
Glue.
In order to solve the above technical problems, one aspect of the present invention is：A kind of gum method of wafer is provided,
It includes：
The wafer of gum is treated in offer；
The glued membrane that offer is made up of photosensitive material；
Glued membrane is pasted on the dorsal part of wafer；
Glued membrane is exposed along the outward flange of wafer；
The glued membrane after exposure is cleaned using developer solution, to remove the glued membrane of the outward flange periphery of wafer.
Wherein, the side of glued membrane is provided with release layer；
The step of glued membrane is pasted to the dorsal part of wafer includes：
The opposite side away from release layer of glued membrane is attached on the dorsal part of wafer.
Wherein, after the step of being cleaned to the glued membrane after exposure using developer solution, further include：
Release layer is removed from the side of glued membrane.
Wherein, before the step of being exposed to glued membrane along the edge of wafer, further include：
Glued membrane is cut, glued membrane is cut into and is located at the outer of wafer with the outward flange of wafer same shape and glued membrane
The periphery at edge.
Wherein, the step of being exposed to glued membrane along the outward flange of wafer includes：
Control the exposure area of glued membrane, with the outward flange of glued membrane that developed liquid is remained after being cleaned with it is brilliant
Round outward flange is concordant.
Wherein, the step of being exposed to glued membrane along the edge of wafer includes：
Wafer is arranged to be located at exposure source the homonymy of glued membrane, and then using wafer to being right against the glue of the dorsal part of wafer
Film is blocked.
Wherein, the step of being exposed to glued membrane along the edge of wafer includes：
Control wafer and exposure source are relatively rotated around the outward flange of wafer, and then outward flange along wafer is entered to glued membrane
Row progressively exposes.
Wherein, the step of control wafer and exposure source are relatively rotated around the outward flange of wafer includes：
Fixed exposure source simultaneously controls wafer to be rotated around own axes.
Wherein, the step of control wafer and exposure source are relatively rotated around the outward flange of wafer includes：
Control exposure source outer with wafer during wafer and exposure source are relatively rotated around the outward flange of wafer
Side face keeps contact.
Wherein, method is further included：Wafer after gum is used to be attached to carrier film, and to being attached on carrier film
Wafer is cut.
The beneficial effects of the invention are as follows：The situation of prior art is different from, it is of the invention to be pasted to wafer by by glued membrane
Dorsal part on；Glued membrane is exposed along the outward flange of wafer；The glued membrane after exposure is cleaned using developer solution, to remove
The glued membrane of the outward flange periphery of wafer, and then the glued membrane of complete attaching can be formed in the dorsal part of wafer, it is to avoid there is leak adhesive；The back of the body
Wafer after glue completely can be fitted on carrier film, when the wafer to being attached on carrier film cuts, can be avoided not
The chip fitted can fly out and forge a knife.
Brief description of the drawings
Technical scheme in order to illustrate more clearly the embodiments of the present invention, below will be to that will adopt needed for embodiment description
Accompanying drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the present invention, for
For those of ordinary skill in the art, on the premise of not paying creative work, other can also be obtained according to these accompanying drawings
Accompanying drawing.Wherein：
Fig. 1 is the structural representation of the gum of the disk of prior art；
Fig. 2 be disk in Fig. 1 gum after there is the schematic diagram of flash；
Fig. 3 be disk in Fig. 1 gum after occur skew schematic diagram；
Fig. 4 is the flow chart of the gum method of the wafer of one embodiment of the invention；
Fig. 5-9 is the schematic diagram of fabrication technology corresponding to the gum method of wafer in Fig. 1.
Specific embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation is described, it is clear that described embodiment is only a part of embodiment of the invention, rather than whole embodiments.Based on this
Embodiment in invention, it is every other that those of ordinary skill in the art are obtained under the premise of performing creative labour is not made
Embodiment, belongs to the scope of protection of the invention.
Fig. 4-9 are referred to, Fig. 4 is the flow chart of the gum method of the wafer of one embodiment of the invention；During Fig. 5-9 is Fig. 4
Schematic diagram of fabrication technology corresponding to the gum method of wafer.The gum method of the wafer disclosed in the present embodiment is used for wafer
Gum is carried out, wafer is the silicon wafer used by silicon semiconductor production of integrated circuits.As described in Figure 4, the method is comprised the following steps：
S11：The wafer of gum is treated in offer；
As shown in Figure 5, there is provided one treats the wafer 20 of gum.
S12：The glued membrane that offer is made up of photosensitive material；
As shown in Figure 6, there is provided a glued membrane 21, glued membrane 21 is made up of photosensitive material.Wherein, the side of glued membrane 21 is settable has
Release layer.
S13：Glued membrane 21 is pasted on the dorsal part of wafer 20；
As shown in fig. 6, the opposite side 211 away from release layer of glued membrane 21 is attached on the dorsal part of wafer 20.
S14：Glued membrane 21 is exposed along the outward flange of wafer 20；
Before the outward flange along wafer 20 is exposed to glued membrane 21, further glued membrane 21 is cut.
Specifically, glued membrane 21 is cut into and is located at the outer of wafer 20 with the outward flange of the same shape of wafer 20 and glued membrane 21
The periphery at edge, as shown in Figure 7.Edge of the glued membrane 21 slightly larger than wafer 20 after cutting, so that glued membrane 21 can be attached completely
In the dorsal part of wafer 20.
Glued membrane 21 is exposed along the outward flange of wafer 20 specifically may include：The exposure area 212 of glued membrane 21 is controlled, with
So that subsequently the outward flange of the glued membrane 21 that developed liquid is remained after being cleaned is concordant with the outward flange of wafer 20, such as Fig. 8
It is shown.
By wafer 20 be arranged to exposure source 22 be located at glued membrane 21 homonymy, and then using wafer 20 pairs be right against wafer 20
The glued membrane 21 of dorsal part blocked, be exposed with the glued membrane 21 for preventing the dorsal part for being right against wafer 20.
Control wafer 20 and exposure source 22 are relatively rotated around the outward flange of wafer 20, and then along the outward flange of wafer 20
Glued membrane 21 is progressively exposed.Wherein it is possible to fix exposure source 22 and control wafer 20 to be rotated around own axes.At it
In his embodiment, those skilled in the art can fix wafer 20, and control exposure source 22 is turned around the axis of wafer 20
It is dynamic.
Control wafer 20 and exposure source 22 carry out relative rotation and further include around the outward flange of wafer 20：In the He of wafer 20
Exposure source 22 around the outward flange of wafer 20 relatively rotated during control the outer peripheral face of exposure source 22 and wafer 20 to keep
Contact.
S15：The glued membrane 21 after exposure is cleaned using developer solution, to remove the glued membrane of the outward flange periphery of wafer 20
21；
As shown in figure 9, the glued membrane 21 after exposure is cleaned using developer solution, to remove the outward flange periphery of wafer 20
Glued membrane 21, and then ensure the integrality of the pad pasting of wafer 20.
After being cleaned to the glued membrane 21 after exposure using developer solution, release layer is removed from the side of glued membrane 21.
The present embodiment is pasted on the dorsal part of wafer 20 by by glued membrane 21；Glued membrane 21 is carried out along the outward flange of wafer 20
Exposure；The glued membrane 21 after exposure is cleaned using developer solution, to remove the glued membrane 21 of the outward flange periphery of wafer 20, and then
The glued membrane 21 of complete attaching can be formed in the dorsal part of wafer 20, it is to avoid leak adhesive occur.
S16：Wafer 20 after gum is used to being attached to carrier film, and wafer 20 to being attached on carrier film is cut
Cut.
Wherein, after the glued membrane 21 of the outward flange periphery of removal wafer 20, the wafer 20 after gum is formed.Crystalline substance after gum
Circle 20 is attached on carrier film, and the wafer 20 to being attached on carrier film cuts, because the dorsal part of wafer 20 forms complete attaching
Glued membrane 21, therefore wafer 20 after gum completely can be fitted on carrier film, in the wafer to being attached on the carrier film
When being cut, the chip do not fitted can be avoided from flying out and forge a knife, and then the edge of wafer 20 can be avoided to go out
Existing flash or carrier film and wafer 20 produce skew.
Embodiments of the present invention are the foregoing is only, the scope of the claims of the invention is not thereby limited, it is every using this
Equivalent structure or equivalent flow conversion that description of the invention and accompanying drawing content are made, or directly or indirectly it is used in other correlations
Technical field, is included within the scope of the present invention.
Claims (10)
1. a kind of gum method of wafer, it is characterised in that methods described includes：
The wafer of gum is treated in offer；
The glued membrane that offer is made up of photosensitive material；
The glued membrane is pasted on the dorsal part of the wafer；
The glued membrane is exposed along the outward flange of the wafer；
Using developer solution to exposure after the glued membrane clean, with remove the wafer outward flange periphery the glue
Film.
2. method according to claim 1, it is characterised in that the side of the glued membrane is provided with release layer；
It is described the glued membrane is pasted to the wafer dorsal part the step of include：
The opposite side away from the release layer of the glued membrane is attached on the dorsal part of the wafer.
3. method according to claim 2, it is characterised in that it is described using developer solution to exposure after the glued membrane carry out
After the step of cleaning, further include：
The release layer is removed from the side of the glued membrane.
4. method according to claim 1, it is characterised in that the edge along the wafer exposes to the glued membrane
Before the step of light, further include：
The glued membrane is cut, the glued membrane is cut into the outward flange with the wafer same shape and the glued membrane
Positioned at the outer peripheral periphery of the wafer.
5. method according to claim 1, it is characterised in that the outward flange along the wafer is carried out to the glued membrane
The step of exposure, includes：
The exposure area of the glued membrane is controlled, to cause the outward flange of the glued membrane remained after being cleaned through the developer solution
Outward flange with the wafer is concordant.
6. method according to claim 1, it is characterised in that the edge along the wafer exposes to the glued membrane
The step of light includes：
The wafer is arranged to be located at exposure source the homonymy of the glued membrane, and then using the wafer to being right against the crystalline substance
The glued membrane of round dorsal part is blocked.
7. method according to claim 1, it is characterised in that the edge along the wafer exposes to the glued membrane
The step of light includes：
The wafer and exposure source is controlled to be relatively rotated around the outward flange of the wafer, and then along the outward flange of the wafer
The glued membrane is progressively exposed.
8. method according to claim 7, it is characterised in that the control wafer and exposure source are around the wafer
The step of outward flange is relatively rotated includes：
The fixation exposure source simultaneously controls the wafer to be rotated around own axes.
9. method according to claim 7, it is characterised in that the control wafer and exposure source are around the wafer
The step of outward flange is relatively rotated includes：
Controlled during the wafer and exposure source are relatively rotated around the outward flange of the wafer exposure source with
The outer peripheral face of the wafer keeps contact.
10. method according to claim 1, it is characterised in that methods described is further included：
Wafer after gum is used to being attached to carrier film, and wafer to being attached on the carrier film cuts.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611264362.7A CN106783548B (en) | 2016-12-30 | 2016-12-30 | Wafer gum application method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611264362.7A CN106783548B (en) | 2016-12-30 | 2016-12-30 | Wafer gum application method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106783548A true CN106783548A (en) | 2017-05-31 |
| CN106783548B CN106783548B (en) | 2020-01-03 |
Family
ID=58951522
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611264362.7A Active CN106783548B (en) | 2016-12-30 | 2016-12-30 | Wafer gum application method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106783548B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI655694B (en) * | 2018-07-17 | 2019-04-01 | 奇景光電股份有限公司 | Glue sealing apparatus and glue sealing method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102150240A (en) * | 2009-01-13 | 2011-08-10 | 东丽先端素材株式会社 | Adhesive film for a wafer support for processing a wafer of a semiconductor thin film |
| CN102479688A (en) * | 2010-11-29 | 2012-05-30 | 中芯国际集成电路制造(北京)有限公司 | Method of wafer surface photoresistance edge removal |
| CN103034062A (en) * | 2011-09-29 | 2013-04-10 | 中芯国际集成电路制造(北京)有限公司 | Method for edge exposure of wafer, optical modules and automatic focusing systems |
| US20130206176A1 (en) * | 2010-06-07 | 2013-08-15 | Kurita Water Industries Ltd. | Cleaning system and cleaning method |
| CN105336581A (en) * | 2015-11-04 | 2016-02-17 | 株洲南车时代电气股份有限公司 | Manufacturing method and apparatus of power semiconductor device |
-
2016
- 2016-12-30 CN CN201611264362.7A patent/CN106783548B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102150240A (en) * | 2009-01-13 | 2011-08-10 | 东丽先端素材株式会社 | Adhesive film for a wafer support for processing a wafer of a semiconductor thin film |
| US20130206176A1 (en) * | 2010-06-07 | 2013-08-15 | Kurita Water Industries Ltd. | Cleaning system and cleaning method |
| CN102479688A (en) * | 2010-11-29 | 2012-05-30 | 中芯国际集成电路制造(北京)有限公司 | Method of wafer surface photoresistance edge removal |
| CN103034062A (en) * | 2011-09-29 | 2013-04-10 | 中芯国际集成电路制造(北京)有限公司 | Method for edge exposure of wafer, optical modules and automatic focusing systems |
| CN105336581A (en) * | 2015-11-04 | 2016-02-17 | 株洲南车时代电气股份有限公司 | Manufacturing method and apparatus of power semiconductor device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI655694B (en) * | 2018-07-17 | 2019-04-01 | 奇景光電股份有限公司 | Glue sealing apparatus and glue sealing method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106783548B (en) | 2020-01-03 |
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