CN108400226A - The manufacturing method and light-emitting diode chip for backlight unit of light-emitting diode chip for backlight unit - Google Patents
The manufacturing method and light-emitting diode chip for backlight unit of light-emitting diode chip for backlight unit Download PDFInfo
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- CN108400226A CN108400226A CN201810101390.XA CN201810101390A CN108400226A CN 108400226 A CN108400226 A CN 108400226A CN 201810101390 A CN201810101390 A CN 201810101390A CN 108400226 A CN108400226 A CN 108400226A
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- transparent substrate
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- light
- emitting diode
- backlight unit
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 89
- 238000000034 method Methods 0.000 claims abstract description 44
- 230000011218 segmentation Effects 0.000 claims abstract description 23
- 239000004065 semiconductor Substances 0.000 claims abstract description 7
- 239000013078 crystal Substances 0.000 claims abstract description 6
- 230000012010 growth Effects 0.000 claims abstract description 6
- 230000010354 integration Effects 0.000 claims description 11
- 229910052594 sapphire Inorganic materials 0.000 claims description 11
- 239000010980 sapphire Substances 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 5
- 239000005304 optical glass Substances 0.000 claims description 4
- 239000011347 resin Substances 0.000 claims description 4
- 229920005989 resin Polymers 0.000 claims description 4
- 239000011222 crystalline ceramic Substances 0.000 claims description 3
- 229910002106 crystalline ceramic Inorganic materials 0.000 claims description 3
- 239000000853 adhesive Substances 0.000 claims description 2
- 230000001070 adhesive effect Effects 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 description 8
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 239000004425 Makrolon Substances 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 150000001540 azides Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000002173 cutting fluid Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000005323 electroforming Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
- Dicing (AREA)
- Led Device Packages (AREA)
Abstract
The manufacturing method and light-emitting diode chip for backlight unit for providing light-emitting diode chip for backlight unit, obtain sufficient brightness.This method has：Chip preparatory process prepares following chip：The chip has laminate layers on crystal growth transparent substrate, be respectively formed with LED circuit in each region divided by a plurality of segmentation preset lines that cross one another on the front of laminate layers, the laminate layers be formed with comprising luminescent layer including multiple semiconductor layers；The front of 1st transparent substrate is pasted on the backside of the wafer and forms the 1st integrated chip by the 1st transparent substrate adhering processes；The front for the 2nd transparent substrate that inside is formed with multiple bubbles is pasted onto on the back side of the 1st transparent substrate after implementing the 1st transparent substrate adhering processes and forms the 2nd integrated chip by the 2nd transparent substrate adhering processes；And segmentation process, chip is cut off together with the 1st, the 2nd transparent substrate along segmentation preset lines and the 2nd integrated chip is divided into each light-emitting diode chip for backlight unit.
Description
Technical field
The present invention relates to the manufacturing method of light-emitting diode chip for backlight unit and light-emitting diode chip for backlight unit.
Background technology
Laminate layers are formed on the front of the crystal growths such as sapphire substrate, GaN substrate, SiC substrate substrate, it should
Laminate layers are formed by by n-type semiconductor layer, luminescent layer and p-type semiconductor layer laminated multi-layer, will be on the laminate layers
It is formed with multiple LED (Light Emitting Diode in the region divided by a plurality of segmentation preset lines intersected：Light-emitting diodes
Pipe) etc. luminescent devices chip by along segmentation preset lines cut-out and be divided into each light-emitting device chip, the hair divided
Optical device chip is widely used in the various electronic equipments such as mobile phone, personal computer, lighting apparatus.
Since the light that is projected from the luminescent layer of light-emitting device chip has isotropism, thus light can also be irradiated to crystal at
The inside of length substrate and also projected from the back side of substrate and side.However, in the light for the inside for being irradiated to substrate, due to base
The incidence angle of the interface of plate and air layer occurs total reflection on interface for light more than critical angle and is held in inside substrate,
Outside will not be injected to from substrate, so there are problems that causing the brightness of light-emitting device chip to reduce.
In order to solve this problem, following light emitting diode (LED) is described in patent document 1：In order to inhibit from hair
The light that photosphere projects is held in the inside of substrate, and transparent component is pasted on the back of the substrate and realizes the raising of brightness.
Patent document 1：Japanese Unexamined Patent Publication 2014-175354 bulletins
However, in light emitting diode disclosed in patent document 1, there are the following problems：Although by by transparent component
It is pasted onto the back side of substrate and slightly increases brightness, but be unable to get sufficient brightness.
Invention content
The present invention is completed in view of such point, it is intended that shining for sufficient brightness can be obtained by providing
The manufacturing method and light-emitting diode chip for backlight unit of diode chip for backlight unit.
Invention according to technical solution 1 provides the manufacturing method of light-emitting diode chip for backlight unit, which is characterized in that the hair
The manufacturing method of luminous diode chip has following process：Chip preparatory process prepares following chip：The chip is in crystal
There are laminate layers on growth transparent substrate, on the front of the laminate layers by a plurality of segmentation preset lines that cross one another
Be respectively formed with LED circuit in each region divided, wherein the laminate layers be formed with comprising luminescent layer including multiple half
Conductor layer；The front of 1st transparent substrate is pasted on the backside of the wafer and forms the 1st one by the 1st transparent substrate adhering processes
Change chip；Inside is formed with multiple by the 2nd transparent substrate adhering processes after implementing the 1st transparent substrate adhering processes
The front of 2nd transparent substrate of bubble is pasted onto on the back side of the 1st transparent substrate and forms the 2nd integrated chip；And point
Cut process, along the segmentation preset lines by the chip cut off together with the 1st transparent substrate and the 2nd transparent substrate and by this
2 integrated chips are divided into each light-emitting diode chip for backlight unit.
It is preferred that the 1st transparent substrate and the 2nd transparent substrate are by crystalline ceramics, optical glass, sapphire and transparent tree
Any materials in fat are formed, and it is viscous to implement the 1st transparent substrate adhering processes and the 2nd transparent substrate using transparent adhesive
Paste process.
According to the invention described in technical solution 4, light-emitting diode chip for backlight unit is provided, which is characterized in that the light-emitting diodes tube core
Piece has：Light emitting diode is formed with LED circuit on front；1st transparent component, front are pasted onto the light-emitting diodes
On the back side of pipe；And internal 2nd transparent component with multiple bubbles, front is pasted onto the back side of the 1st transparent component
On.
About the light-emitting diode chip for backlight unit of the present invention, due to being pasted with the front of the 1st transparent component on the back side of LED,
The front of internal 2nd transparent component with multiple bubbles is pasted on the back side of the 1st transparent component, so light is the 1st
The light for intricately being reflected in transparent component and the 2nd transparent component and making pass in the 1st transparent component and the 2nd transparent component is reduced,
The amount of the light projected from the 1st transparent component and the 2nd transparent component increases and the brightness of light-emitting diode chip for backlight unit is made to improve.
Description of the drawings
Fig. 1 is the face side stereogram of optical device wafer.
(A) of Fig. 2 is to show to paste in the front of the 1st transparent substrate to carry out the integrated 1st on the backside of the wafer
The stereogram of transparent substrate adhering processes, (B) of Fig. 2 are the stereograms of the 1st integrated chip.
(A) of Fig. 3 is to show that the front by the 2nd transparent substrate is pasted onto the back of the body of the 1st transparent substrate of the 1st integrated chip
The stereogram of integrated 2nd transparent substrate adhering processes is carried out on face, (B) of Fig. 3 is the solid of the 2nd integrated chip
Figure.
Fig. 4 is the bearing process for showing to be supported using the integrated chip of ring-shaped frame pair the 2nd by dicing tape
Stereogram.
Fig. 5 is the stereogram for showing the 2nd integrated chip being divided into the segmentation process of light-emitting diode chip for backlight unit.
Fig. 6 is the stereogram of the 2nd integrated chip after segmentation process.
Fig. 7 is the stereogram of the light-emitting diode chip for backlight unit of embodiment of the present invention.
Label declaration
10：Cutting unit；11：Optical device wafer (chip)；13：Sapphire substrate；14：Cutting tool；15：Laminated body
Layer；17：Divide preset lines；19：LED circuit；21：1st transparent substrate；21A：2nd transparent substrate；25：1st integrated chip；
25A：2nd integrated chip；27：Cutting groove；29：Bubble；31：Light-emitting diode chip for backlight unit.
Specific implementation mode
Hereinafter, embodiments of the present invention are described in detail with reference to attached drawing.Referring to Fig.1, optical device crystalline substance is shown
The face side stereogram of piece (hereinafter, sometimes referred to simply as chip) 11.
Optical device wafer 11 is in 13 upper layer Azide gallium (GaN) homepitaxy layer (laminate layers) 15 of sapphire substrate and structure
At.Optical device wafer 11 has the back side 11b that the positive 11a for being laminated with epitaxial layer 15 and sapphire substrate 13 are exposed.
Here, in the optical device wafer of present embodiment 11, crystal growth base is used as using sapphire substrate 13
Plate, but GaN substrate or SiC substrate can also be used instead of sapphire substrate 13 etc..
Laminate layers (epitaxial layer) 15 be by make electronics be majority carrier n-type semiconductor layer (for example, N-shaped GaN
Layer), the semiconductor layer (for example, InGaN layer) as luminescent layer, hole be majority carrier p-type semiconductor layer (for example, p-type
GaN layer) in order epitaxial growth and formed.
Sapphire substrate 13 is for example with 100 μm of thickness, and laminate layers 15 are for example with 5 μm of thickness.In laminated body
A plurality of segmentation preset lines 17 on layer 15 by being formed as clathrate are formed with multiple LED circuits 19 by division.Chip 11 has
It is formed with the positive 11a of LED circuit 19 and back side 11b that sapphire substrate 13 is exposed.
According to the manufacturing method of the light-emitting diode chip for backlight unit of embodiment of the present invention, first, implement chip preparatory process, it is accurate
Standby optical device wafer 11 shown in FIG. 1.And then implement transparent substrate preparatory process, prepare the 1st, the 2nd transparent substrate.
After implementing transparent substrate preparatory process, as shown in (A) of Fig. 2, implement the 1st transparent substrate adhering processes,
The positive 21a of 1st transparent substrate 21 is pasted onto on the back side 11b of chip 11.(B) of Fig. 2 is the vertical of the 1st integrated chip 25
Body figure.
1st transparent substrate 21 is formed by any materials in transparent resin, optical glass, sapphire, crystalline ceramics.At this
In embodiment, by forming the 1st, the 2nd thoroughly than transparent resins such as makrolon of the optical glass with durability, allyl resins
Bright substrate.
After implementing the 1st transparent substrate adhering processes, as shown in (A) of Fig. 3, inside is formed with multiple bubbles 29
The 2nd transparent substrate 21A positive 21a the 1st transparent substrates 21 that are pasted onto the 1st integrated chip 25 the back side on (the 2nd is transparent
Substrate sticking process) and form the 2nd integrated chip 25A shown in (B) of Fig. 3.The material of 2nd transparent substrate 21A also with it is upper
The material for the 1st transparent substrate 21 stated is same.
Above-mentioned the 1st transparent substrate adhering processes and the 2nd transparent substrate adhering processes can also be replaced, transparent by the 2nd
The front of substrate 21A is pasted onto on the back side of the 1st transparent substrate 21 and after having carried out integration, by the back side 11b of chip 11
It is pasted onto on the positive 21a of the 1st transparent substrate 21.
After implementing the 2nd transparent substrate adhering processes, as shown in figure 4, implement bearing process, the 2nd integration is brilliant
The 2nd transparent substrate 21A of piece 25A is pasted onto peripheral part and is glued on the dicing tape T of ring-shaped frame F and forms frame unit,
It is supported using F couples the 2nd integration chip 25A of ring-shaped frame by dicing tape T.
After implementing bearing process, implements segmentation process, frame unit is put into cutting apparatus, cutting is utilized
The 2nd integration chip 25A of device pair is cut and is divided into each light-emitting diode chip for backlight unit.With reference to Fig. 5 to the segmentation process
It illustrates.
For example, implementing the segmentation process using well known cutting apparatus.As shown in figure 5, the cutting unit of cutting apparatus
10 include：Main shaft shell 12；Main shaft (not shown) is inserted into a manner of it can rotate in main shaft shell 12；And bite
Tool 14 is mounted on the front end of main shaft.
The electroforming grinding tool that the cutting edge of cutting tool 14 secures diamond abrasive grain for example by nickel plating is formed, before
End shape is triangle, quadrangle or semicircle.
The generally part of cutting tool 14 is covered by cutter hood (wheel cover) 16, is equipped in bite in cutter hood 16
Horizontal-extending a pair of (the illustrating only 1) cooling nozzles 18 in the inboard of tool 14 and nearby side.
In segmentation process, the 2nd integration chip 25A is filled across the dicing tape T attracting holdings of frame unit in cutting
On the chuck table 20 set, ring-shaped frame F is clamped and fixed by fixture (not shown).
Then, the front end of cutting tool 14 is made to cut while making cutting tool 14 according to arrow R direction high speed rotations
To chip 11 segmentation preset lines 17 until reaching dicing tape T, and on one side from cooling nozzles 18 towards cutting tool 14 and crystalline substance
The processing stand of piece 11 provides cutting fluid, is processed feeding on the directions arrow X1 to the 2nd integration chip 25A on one side, as a result,
The cutting groove 27 by chip 11 and the 1st, the 2nd transparent substrate 21,21A cut-outs is formed along the segmentation preset lines 17 of chip 11.
Index feed is carried out in the Y-axis direction to cutting unit 10 on one side, on one side along the segmentation upwardly extended in the 1st side
Preset lines 17 sequentially form same cutting groove 27.Then, after so that chuck table 20 is rotated by 90 °, along with the 1st side
The whole segmentation preset lines 17 upwardly extended to the 2nd vertical side form same cutting groove 27 and become shape shown in fig. 6
State, to which the 2nd integration chip 25A is divided into light-emitting diode chip for backlight unit 31 shown in Fig. 7.
In the above-described embodiment, although the 2nd integration chip 25A is divided into each luminous two using cutting apparatus
Pole pipe chip 31, but can also have for chip 11 and transparent substrate 21,21A to the irradiation of chip 11 along segmentation preset lines 13
The laser beam of the wavelength of permeability, in the inside through-thickness shape of chip 11, the 1st transparent substrate 21 and the 2nd transparent substrate 21A
Layer is modified at multilayer, is that segmentation starting point is brilliant by the 2nd integration to modify layer to the 2nd integrated chip 25A application external force then
Piece 25A is divided into each light-emitting diode chip for backlight unit 31.
In light-emitting diode chip for backlight unit 31 shown in Fig. 7, LED 13A have LED circuit 19 on front, in the LED
The 1st transparent component 21 ' is pasted on the back side of 13A.Also, it is pasted on the back side of the 1st transparent component 21 ' internal with more
2nd transparent component 21A ' of a bubble 29.
Therefore, in light-emitting diode chip for backlight unit 31 shown in Fig. 7, not only the 1st, the surface of the 2nd transparent component 21 ', 21A '
Product increase, and light in the 1st, the 2nd transparent component 21 ', interior intricately reflect of 21A ' and so that light of the pass in transparent component is subtracted
It is few, increase from the amount of transparent component 21, the light of 21A ' injections, the brightness of light-emitting diode chip for backlight unit 31 improves.
Claims (4)
1. a kind of manufacturing method of light-emitting diode chip for backlight unit, which is characterized in that the manufacturing method of the light-emitting diode chip for backlight unit has
Following process：
Chip preparatory process prepares following chip：The chip has laminate layers on crystal growth transparent substrate, at this
It is respectively formed with LED circuit in each region divided by a plurality of segmentation preset lines to cross one another on the front of laminate layers,
Wherein, multiple semiconductor layers including the laminate layers are formed with comprising luminescent layer；
The front of 1st transparent substrate is pasted on the backside of the wafer and forms the 1st integration by the 1st transparent substrate adhering processes
Chip；
Inside is formed with multiple gas by the 2nd transparent substrate adhering processes after implementing the 1st transparent substrate adhering processes
The front of 2nd transparent substrate of bubble is pasted onto on the back side of the 1st transparent substrate and forms the 2nd integrated chip；And
Segmentation process, the chip cut off together with the 1st transparent substrate and the 2nd transparent substrate along the segmentation preset lines and
2nd integrated chip is divided into each light-emitting diode chip for backlight unit.
2. the manufacturing method of light-emitting diode chip for backlight unit according to claim 1, wherein
Instead of the 1st transparent substrate adhering processes and the 2nd transparent substrate adhering processes, by the front of the 2nd transparent substrate
It is pasted onto on the back side of the 1st transparent substrate and after having carried out integration, the back side of chip is pasted onto the 1st transparent substrate
Front on.
3. the manufacturing method of light-emitting diode chip for backlight unit according to claim 1, wherein
1st transparent substrate and the 2nd transparent substrate are by appointing in crystalline ceramics, optical glass, sapphire and transparent resin
Meaning material is formed, and implements the 1st transparent substrate adhering processes and the 2nd transparent substrate adhering processes using transparent adhesive.
4. a kind of light-emitting diode chip for backlight unit, which is characterized in that the light-emitting diode chip for backlight unit has：
Light emitting diode is formed with LED circuit on front；
1st transparent component, front are pasted onto on the back side of the light emitting diode；And
Inside has the 2nd transparent component of multiple bubbles, and front is pasted onto on the back side of the 1st transparent component.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017-019856 | 2017-02-06 | ||
| JP2017019856A JP2018129343A (en) | 2017-02-06 | 2017-02-06 | Method for manufacturing light-emitting diode chip and light-emitting diode chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108400226A true CN108400226A (en) | 2018-08-14 |
Family
ID=63095806
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810101390.XA Pending CN108400226A (en) | 2017-02-06 | 2018-02-01 | The manufacturing method and light-emitting diode chip for backlight unit of light-emitting diode chip for backlight unit |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2018129343A (en) |
| KR (1) | KR102304244B1 (en) |
| CN (1) | CN108400226A (en) |
| TW (1) | TWI771358B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110544739A (en) * | 2019-09-02 | 2019-12-06 | 闽南师范大学 | Flip red light chip and manufacturing method thereof |
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- 2018-01-03 TW TW107100190A patent/TWI771358B/en active
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- 2018-02-05 KR KR1020180013863A patent/KR102304244B1/en active IP Right Grant
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Also Published As
| Publication number | Publication date |
|---|---|
| KR20180091744A (en) | 2018-08-16 |
| TWI771358B (en) | 2022-07-21 |
| TW201834041A (en) | 2018-09-16 |
| JP2018129343A (en) | 2018-08-16 |
| KR102304244B1 (en) | 2021-09-17 |
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