CN107895714A - The manufacture method and light-emitting diode chip for backlight unit of light-emitting diode chip for backlight unit - Google Patents
The manufacture method and light-emitting diode chip for backlight unit of light-emitting diode chip for backlight unit Download PDFInfo
- Publication number
- CN107895714A CN107895714A CN201710851015.2A CN201710851015A CN107895714A CN 107895714 A CN107895714 A CN 107895714A CN 201710851015 A CN201710851015 A CN 201710851015A CN 107895714 A CN107895714 A CN 107895714A
- Authority
- CN
- China
- Prior art keywords
- chip
- light
- emitting diode
- backlight unit
- transparency carrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
Abstract
The manufacture method and light-emitting diode chip for backlight unit of light-emitting diode chip for backlight unit are provided, sufficient brightness can be obtained.A kind of manufacture method of light-emitting diode chip for backlight unit, it is characterised in that there is following process：Chip preparatory process, prepare following chip：The chip has laminate layers on crystal growth transparency carrier, LED circuit is respectively formed with each region divided on the front of the laminate layers by a plurality of segmentation preset lines to cross one another, wherein, the laminate layers are formed with including multiple semiconductor layers including luminescent layer；Transparency carrier preparatory process, prepare the transparency carrier internally formed with multiple bubbles；Integrated process, the back side of chip is pasted onto on the front of the transparency carrier and forms integrated chip；And segmentation process, the chip is cut off together with the transparency carrier along the segmentation preset lines and the integrated chip is divided into each light-emitting diode chip for backlight unit.
Description
Technical field
The present invention relates to the manufacture method of light-emitting diode chip for backlight unit and light-emitting diode chip for backlight unit.
Background technology
, should formed with laminate layers on the front of the crystal growth substrate such as sapphire substrate, GaN substrate, SiC substrate
Laminate layers, will be in the laminate layers by the way that n-type semiconductor layer, luminescent layer and p-type semiconductor layer laminated multi-layer are formed
On in the region that is marked off by a plurality of segmentation preset lines intersected formed with multiple LED (Light Emitting Diode：It is luminous
Diode) etc. luminescent device chip along segmentation preset lines cut-out and be divided into each light-emitting device chip, split what is obtained
Light-emitting device chip is widely used in the various electronic equipments such as mobile phone, personal computer, lighting apparatus.
Because the light of the luminescent layer injection from light-emitting device chip has isotropic property, so light can be also irradiated to
The inside of crystal growth substrate from the back side of substrate and side so as to can also be emitted.But there are the following problems, due to shining
It is mapped in the light of the inside of substrate, the incidence angle of the interface of substrate and air layer occurs for light more than critical angle on interface
It is totally reflected and is closed in inside substrate, outside will not be emitted to from substrate, so causes the luminance-reduction of light-emitting device chip.
In order to solve the problem, following light emitting diode has been recorded in Japanese Unexamined Patent Publication 2014-175354 publications
(LED)：In order to suppress that the inside of substrate is closed in from the light that luminescent layer projects, transparent component is pasted on the back of the substrate
To improve brightness.
Patent document 1：Japanese Unexamined Patent Publication 2014-175354 publications
However, in the light emitting diode disclosed in patent document 1, there are the following problems：Although by by transparent component
It is pasted onto the back side of substrate and slightly increases brightness, but sufficient brightness can not be obtained.
The content of the invention
The present invention be in view of such point and complete, its object is to, there is provided the luminous of sufficient brightness can be obtained
The manufacture method and light-emitting diode chip for backlight unit of diode chip for backlight unit.
According to the invention of technical scheme 1, there is provided the manufacture method of light-emitting diode chip for backlight unit, it is characterised in that this luminous two
The manufacture method of pole pipe chip has following process：Chip preparatory process, prepare following chip：The chip is in crystal growth
With having laminate layers on transparency carrier, divided on the front of the laminate layers by a plurality of segmentation preset lines to cross one another
LED circuit is respectively formed with each region, wherein, the laminate layers are formed with including multiple semiconductors including luminescent layer
Layer；Transparency carrier preparatory process, prepare the transparency carrier internally formed with multiple bubbles；Integrated process, by the back of the body of chip
Face is pasted onto on the front of the transparency carrier and forms integrated chip；And segmentation process, should along the segmentation preset lines
Chip cuts off together with the transparency carrier and the integrated chip is divided into each light-emitting diode chip for backlight unit.
It is preferred that the transparency carrier is formed by any materials in crystalline ceramics, optical glass, sapphire and transparent resin,
The transparency carrier is bonded on chip by transparent adhesive in the integrated process.
According to the invention of technical scheme 3, there is provided light-emitting diode chip for backlight unit, wherein, the light-emitting diode chip for backlight unit has：It is luminous
Diode, it is on front formed with LED circuit；And transparent component, it is pasted onto on the back side of the light emitting diode, at this
Transparent component has been internally formed multiple bubbles.
On the light-emitting diode chip for backlight unit of the present invention, due to being internally formed for the transparent component at the back side for being pasted on LED
Have multiple bubbles, thus transparent component surface area increase, and reduce because light in transparent component intricately refraction so as to
The light being closed in transparent component, from the amount increase of the light of transparent component outgoing, improve the brightness of light-emitting diode chip for backlight unit.
Brief description of the drawings
Fig. 1 is the face side stereogram of optical device wafer.
Fig. 2 (A) is to show to paste to enter on the backside of the wafer by the front of the transparency carrier with multiple through holes
The stereogram of the integrated process of row integration, Fig. 2 (B) is the stereogram of integrated chip.
Fig. 3 is to show the stereogram by supporting process of the dicing tape by integrated wafer supporting on ring-shaped frame.
Fig. 4 is the stereogram for showing integrated chip being divided into the segmentation process of light-emitting diode chip for backlight unit.
Fig. 5 is the stereogram of the integrated chip after segmentation process terminates.
Fig. 6 is the stereogram of the light-emitting diode chip for backlight unit of embodiment of the present invention.
Label declaration
10：Cutting unit；11：Optical device wafer (chip)；13：Sapphire substrate；14：Cutting tool；15：Layered product
Layer；17：Split preset lines；19：LED circuit；21：Transparency carrier；21A：Transparent component；25：Integrated chip；27：Cutting groove；
29：Bubble；31：Light-emitting diode chip for backlight unit.
Embodiment
Hereinafter, embodiments of the present invention are described in detail referring to the drawings.Reference picture 1, show optical device crystalline substance
The face side stereogram of piece (below, sometimes referred to simply as chip) 11.
Optical device wafer 11 is configured to be laminated with gallium nitride (GaN) homepitaxy layer (laminate layers) on sapphire substrate 13
15.Optical device wafer 11, which has, to be laminated with the positive 11a of epitaxial layer 15 and exposes the back side 11b of sapphire substrate 13.
Here, in the optical device wafer 11 of present embodiment, crystal growth base is used as using sapphire substrate 13
Plate, but sapphire substrate 13 can also be replaced and use GaN substrate or SiC substrate etc..
Laminate layers (epitaxial layer) 15 be by make successively electronics be majority carrier n-type semiconductor layer (for example, n-type
GaN layer), the semiconductor layer (for example, InGaN layer) as luminescent layer, hole for majority carrier p-type semiconductor layer (for example,
P-type GaN layer) epitaxial growth and formed.
Sapphire substrate 13 is for example with 100 μm of thickness, and laminate layers 15 are for example with 5 μm of thickness.In layered product
Divided on layer 15 by being formed as a plurality of segmentation preset lines 17 of clathrate and formed with multiple LED circuits 19.Chip 11 has
Positive 11a formed with the LED circuit 19 and back side 11b for exposing sapphire substrate 13.
According to the manufacture method of the light-emitting diode chip for backlight unit of embodiment of the present invention, first, implement chip preparatory process, it is accurate
Optical device wafer 11 shown in standby Fig. 1.Then implement transparency carrier preparatory process, prepare internally formed with multiple bubbles 29
Transparency carrier 21.
After transparency carrier preparatory process is implemented, as shown in Fig. 2 (A), implement integrated process, by transparency carrier
21 positive 21a is pasted onto on the back side 11b of chip 11.Fig. 2 (B) is the stereogram of integrated chip.
Transparency carrier 21 is formed by any materials in transparent resin, optical glass, sapphire and crystalline ceramics.In this reality
Apply in mode, by having the transparent resins such as the makrolon of durability, acrylic resin to form transparency carrier than optical glass.
After integrated process is implemented, as shown in figure 3, implementing supporting process, by the transparent base of integrated chip 25
Plate 21 is pasted onto peripheral part and is glued on ring-shaped frame F dicing tape T and forms frame unit, is utilized by dicing tape T
Ring-shaped frame F supports to integrated chip 25.
After supporting process is implemented, implement segmentation step, frame unit is put into topping machanism, utilizes cutting
Device is cut integrated chip 25 and is divided into each light-emitting diode chip for backlight unit.Reference picture 4 is carried out to the segmentation process
Explanation.
For example, implement the segmentation process using well known topping machanism.As shown in figure 4, the cutting unit of topping machanism
10 include：Main shaft shell 12；Main shaft (not shown), it is inserted into a manner of it can rotate in main shaft shell 12；And cutting
Cutter 14, it is arranged on the front end of main shaft.
The electroforming grinding tool that the cutting edge of cutting tool 14 secures diamond abrasive grain for example by nickel plating is formed, before it
End is shaped as triangle, quadrangle or semicircle.
The roughly upper half of cutting tool 14 is covered by cutter hood (wheel cover) 16, is equipped with and is cutting in cutter hood 16
The inboard of cutter 14 and nearby a pair horizontal-extending of (illustrate only 1) cooling nozzles 18 of side.
It is integrated across the dicing tape T attracting holdings of frame unit by the chuck table 20 of topping machanism in segmentation process
Chip 25, ring-shaped frame F are clamped and fixed by fixtures (not shown).
Then, cutting tool 14 is made to be rotated according to arrow R directions while cutting the front end of cutting tool 14 at a high speed
The segmentation preset lines 17 of chip 11 are until reaching dicing tape T, and while from cooling nozzles 18 towards cutting tool 14 and chip
11 processing stand provides cutting fluid, while feeding is processed on arrow X1 directions to integrated chip 25, thus, along crystalline substance
The segmentation preset lines 17 of piece 11 form the cutting groove 27 for cutting off chip 11 and transparency carrier 21.
While carry out index feed in the Y-axis direction to cutting unit 10, while along the segmentation upwardly extended in the 1st side
Preset lines 17 sequentially form same cutting groove 27.Then, after chuck table 20 is rotated by 90 °, along with the 1st side
The whole segmentation preset lines 17 upwardly extended to the 2nd vertical side form same cutting groove 27 and turn into the shape shown in Fig. 5
State, so as to which integrated chip 25 to be divided into the light-emitting diode chip for backlight unit 31 shown in Fig. 6.
In the above-described embodiment, although integrated chip 25 is divided into each light emitting diode using topping machanism
Chip 31, but chip 11 can also be irradiated along segmentation preset lines 13 for chip 11 and transparency carrier 21 with radioparent
The laser beam of wavelength and the inside through-thickness in chip 11 and transparency carrier 21 forms multilayer modification layer, then, to one
Change chip 25 to apply external force and integrated chip 25 is divided into each light-emitting diode chip for backlight unit 31 as segmentation starting point to modify layer.
In the light-emitting diode chip for backlight unit 31 shown in Fig. 6, on front on the back side of the LED 13A with LED circuit 19
It is pasted with transparent component 21A.Also, multiple bubbles 29 have been internally formed it in transparent component 21A.
Therefore, in the light-emitting diode chip for backlight unit 31 shown in Fig. 6, the increase of the surface area of transparent component, and reduce because
Light is intricately reflected in transparent component so as to be closed in the light in transparent component, from the amount of the light of transparent component 21A outgoing
Increase, the brightness of light-emitting diode chip for backlight unit 31 improve.
Claims (3)
1. a kind of manufacture method of light-emitting diode chip for backlight unit, it is characterised in that the manufacture method of the light-emitting diode chip for backlight unit has
Following process：
Chip preparatory process, prepare following chip：The chip has laminate layers on crystal growth transparency carrier, at this
LED circuit is respectively formed with each region marked off on the front of laminate layers by a plurality of segmentation preset lines to cross one another,
Wherein, the laminate layers are formed with including multiple semiconductor layers including luminescent layer；
Transparency carrier preparatory process, prepare the transparency carrier internally formed with multiple bubbles；
Integrated process, the back side of chip is pasted onto on the front of the transparency carrier and forms integrated chip；And
Segmentation process, the chip is cut off together with the transparency carrier along the segmentation preset lines and splits the integrated chip
Into each light-emitting diode chip for backlight unit.
2. the manufacture method of light-emitting diode chip for backlight unit according to claim 1, wherein,
The transparency carrier is formed by any materials in crystalline ceramics, optical glass, sapphire and transparent resin, in the one
The transparency carrier is pasted on this wafer using transparent adhesive in chemical industry sequence.
3. a kind of light-emitting diode chip for backlight unit, wherein,
The light-emitting diode chip for backlight unit has：
Light emitting diode, it is on front formed with LED circuit；And
Transparent component, it is pasted onto on the back side of the light emitting diode,
Multiple bubbles have been internally formed in the transparent component.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016-195902 | 2016-10-03 | ||
| JP2016195902A JP2018060870A (en) | 2016-10-03 | 2016-10-03 | Method for manufacturing light-emitting diode chip and light-emitting diode chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107895714A true CN107895714A (en) | 2018-04-10 |
Family
ID=61803470
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710851015.2A Pending CN107895714A (en) | 2016-10-03 | 2017-09-20 | The manufacture method and light-emitting diode chip for backlight unit of light-emitting diode chip for backlight unit |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2018060870A (en) |
| KR (1) | KR20180037107A (en) |
| CN (1) | CN107895714A (en) |
| TW (1) | TW201814199A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050056831A1 (en) * | 2003-09-17 | 2005-03-17 | Toyoda Gosei Co., Ltd. | Light-emitting device |
| CN102468415A (en) * | 2010-11-01 | 2012-05-23 | 三星Led株式会社 | Semiconductor light emitting device |
| JP2014239123A (en) * | 2013-06-06 | 2014-12-18 | 株式会社ディスコ | Processing method |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007266356A (en) * | 2006-03-29 | 2007-10-11 | Kyocera Corp | Light-emitting device and illuminator using the same |
| JP2011009305A (en) * | 2009-06-23 | 2011-01-13 | Koito Mfg Co Ltd | Light-emitting module |
| JP2015192100A (en) * | 2014-03-28 | 2015-11-02 | 豊田合成株式会社 | Light-emitting element and method of manufacturing light-emitting element |
| TW201614870A (en) * | 2014-10-08 | 2016-04-16 | Toshiba Kk | Semiconductor light emitting device and method for manufacturing the same |
-
2016
- 2016-10-03 JP JP2016195902A patent/JP2018060870A/en active Pending
-
2017
- 2017-09-04 TW TW106130121A patent/TW201814199A/en unknown
- 2017-09-20 CN CN201710851015.2A patent/CN107895714A/en active Pending
- 2017-09-22 KR KR1020170122609A patent/KR20180037107A/en not_active Application Discontinuation
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050056831A1 (en) * | 2003-09-17 | 2005-03-17 | Toyoda Gosei Co., Ltd. | Light-emitting device |
| CN102468415A (en) * | 2010-11-01 | 2012-05-23 | 三星Led株式会社 | Semiconductor light emitting device |
| JP2014239123A (en) * | 2013-06-06 | 2014-12-18 | 株式会社ディスコ | Processing method |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201814199A (en) | 2018-04-16 |
| JP2018060870A (en) | 2018-04-12 |
| KR20180037107A (en) | 2018-04-11 |
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| PB01 | Publication | ||
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| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20180410 |
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| WD01 | Invention patent application deemed withdrawn after publication |