TW201814199A - Manufacturing method of light emitting diode chip and light emitting diode chip including a wafer preparing step, a transparent substrate preparing step, an integrating step and a cutting step, and the light emitting diode chip is being provided with a sufficient brightness - Google Patents
Manufacturing method of light emitting diode chip and light emitting diode chip including a wafer preparing step, a transparent substrate preparing step, an integrating step and a cutting step, and the light emitting diode chip is being provided with a sufficient brightness Download PDFInfo
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- TW201814199A TW201814199A TW106130121A TW106130121A TW201814199A TW 201814199 A TW201814199 A TW 201814199A TW 106130121 A TW106130121 A TW 106130121A TW 106130121 A TW106130121 A TW 106130121A TW 201814199 A TW201814199 A TW 201814199A
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- 239000000758 substrate Substances 0.000 title claims abstract description 54
- 238000005520 cutting process Methods 0.000 title claims abstract description 25
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 239000013078 crystal Substances 0.000 claims abstract description 8
- 239000004065 semiconductor Substances 0.000 claims abstract description 8
- 235000012431 wafers Nutrition 0.000 claims description 82
- 239000010980 sapphire Substances 0.000 claims description 11
- 229910052594 sapphire Inorganic materials 0.000 claims description 11
- 230000010354 integration Effects 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 9
- 238000002360 preparation method Methods 0.000 claims description 7
- 239000005304 optical glass Substances 0.000 claims description 4
- 239000011347 resin Substances 0.000 claims description 4
- 229920005989 resin Polymers 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 3
- 239000000853 adhesive Substances 0.000 claims description 2
- 230000001070 adhesive effect Effects 0.000 claims description 2
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 230000003287 optical effect Effects 0.000 description 7
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 5
- 238000001816 cooling Methods 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 239000002173 cutting fluid Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 238000002407 reforming Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
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- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
Description
發明領域 本發明是有關於一種發光二極體晶片的製造方法及發光二極體晶片。FIELD OF THE INVENTION The present invention relates to a method for manufacturing a light emitting diode wafer and a light emitting diode wafer.
發明背景 在藍寶石基板、GaN基板、SiC基板等的結晶成長用基板的正面上形成有將n型半導體層、發光層、p型半導體層積層複數層而成的積層體層，並且在此積層體層上藉由交叉的複數條分割預定線所區劃出的區域中形成有複數個LED(發光二極體(Light Emitting Diode))等之發光元件的晶圓，是沿著分割預定線切斷而分割成一個個的發光元件晶片，並且已分割的發光元件晶片是廣泛地應用在手機、個人電腦、照明機器等的各種電氣機器上。BACKGROUND OF THE INVENTION On the front surface of a substrate for crystal growth such as a sapphire substrate, a GaN substrate, and a SiC substrate, a multilayer body layer formed by laminating a plurality of n-type semiconductor layers, light-emitting layers, and p-type semiconductor layers is formed, and on the multilayer body layers A wafer in which a plurality of light emitting elements such as LEDs (Light Emitting Diodes) are formed in an area defined by a plurality of intersecting division lines is cut along the division line and divided into The light-emitting element wafers are one by one, and the divided light-emitting element wafers are widely used in various electric devices such as mobile phones, personal computers, and lighting equipment.
由於從發光元件晶片的發光層射出的光具有各向同性，所以即使被照射到結晶成長用基板的內部也會使光從基板的背面及側面射出。然而，由於已被照射到基板之內部的光之中在與空氣層之間的界面上的入射角為臨界角以上的光會在界面上進行全反射而被封閉在基板內部，並不會有從基板射出到外部之情形，所以會有導致發光元件晶片的亮度降低的問題。Since the light emitted from the light-emitting layer of the light-emitting element wafer is isotropic, even if it is irradiated to the inside of the substrate for crystal growth, the light is emitted from the back and sides of the substrate. However, since the light that has been irradiated to the inside of the substrate has an incident angle above the critical angle at the interface with the air layer, the light is totally reflected on the interface and is enclosed inside the substrate. Since it is emitted from the substrate to the outside, there is a problem that the brightness of the light emitting element wafer is reduced.
為了解決此問題，在日本專利特開2014-175354號公報中已記載有下述之發光二極體(LED)：為了抑制從發光層射出的光被封閉在基板的內部，而形成為在基板的背面貼附透明構件來謀求亮度的提升。 先前技術文獻 專利文獻In order to solve this problem, Japanese Patent Laid-Open No. 2014-175354 has described a light-emitting diode (LED) that is formed on the substrate in order to prevent the light emitted from the light-emitting layer from being enclosed inside the substrate. A transparent member is attached to the back of the lens to increase brightness. Prior Art Literature Patent Literature
專利文獻1：日本專利特開2014-175354號公報Patent Document 1: Japanese Patent Laid-Open No. 2014-175354
發明概要 發明欲解決之課題 然而，在專利文獻1所揭示的發光二極體中，雖然可藉由在基板的背面貼附透明構件而使亮度稍微提升，但是仍有無法得到充分的亮度的問題。SUMMARY OF THE INVENTION Problems to be Solved by the Invention However, in the light-emitting diode disclosed in Patent Document 1, although the brightness can be slightly improved by attaching a transparent member to the back surface of the substrate, there is still a problem that sufficient brightness cannot be obtained. .
本發明是有鑒於像這樣的點而作成的發明，其目的在於提供一種能夠得到充分的亮度的發光二極體晶片的製造方法及發光二極體晶片。 用以解決課題之手段The present invention has been made in view of such points, and an object thereof is to provide a method for manufacturing a light emitting diode wafer and a light emitting diode wafer capable of obtaining sufficient brightness. Means to solve the problem
依據請求項1記載的發明，可提供一種發光二極體晶片的製造方法，該發光二極體晶片的製造方法之特徵在於具備有： 晶圓準備步驟，準備晶圓，該晶圓是在結晶成長用之透明基板上具有積層體層，並於在該積層體層的正面以相互交叉之複數條分割預定線所區劃出之各區域中各自形成有LED電路，該積層體層形成有包含發光層的複數層半導體層； 透明基板準備步驟，準備已於內部形成有複數個氣泡的透明基板； 一體化步驟，將晶圓的背面貼附於該透明基板的正面以形成一體化晶圓；及 分割步驟，沿著該分割預定線將該晶圓和該透明基板一起切斷以將該一體化晶圓分割成一個個的發光二極體晶片。According to the invention described in claim 1, a method for manufacturing a light emitting diode wafer can be provided. The method for manufacturing the light emitting diode wafer includes: a wafer preparation step, preparing a wafer, and the wafer is crystallized. A growth substrate has a laminated body layer, and an LED circuit is formed in each area defined by a plurality of predetermined division lines crossing each other on the front surface of the laminated body layer. The laminated body layer is formed with a plurality of light emitting layers. A semiconductor substrate; a transparent substrate preparation step, preparing a transparent substrate having a plurality of bubbles formed therein; an integration step, attaching a back surface of the wafer to a front surface of the transparent substrate to form an integrated wafer; and a singulation step, The wafer and the transparent substrate are cut together along the predetermined division line to divide the integrated wafer into individual light emitting diode wafers.
較理想的是，該透明基板是以透明陶瓷、光學玻璃、藍寶石、透明樹脂的任一種所形成，並且在該一體化步驟中該透明基板是利用透明接著劑來接著於晶圓。Preferably, the transparent substrate is formed of any one of transparent ceramic, optical glass, sapphire, and transparent resin, and in the integration step, the transparent substrate is adhered to the wafer using a transparent adhesive.
依據請求項3記載的發明，可提供一種發光二極體晶片，該發光二極體晶片具備：於正面形成有LED電路的發光二極體、及貼附在該發光二極體之背面的透明構件，且在該透明構件的內部形成有複數個氣泡。 發明效果According to the invention described in claim 3, it is possible to provide a light-emitting diode wafer including a light-emitting diode in which an LED circuit is formed on a front surface, and a transparent film attached to a back surface of the light-emitting diode. Member, and a plurality of bubbles are formed inside the transparent member. Invention effect
由於本發明的發光二極體晶片是在貼附於LED的背面之透明構件的內部形成有複數個氣泡，所以除了會使透明構件的表面積增大之外，也會使光在透明構件內複雜地折射，以使被封閉在透明構件內之光減少，而使從透明構件射出之光的量增大並使發光二極體晶片的亮度提升。Since the light-emitting diode wafer of the present invention has a plurality of bubbles formed inside the transparent member attached to the back of the LED, in addition to increasing the surface area of the transparent member, it also complicates the light inside the transparent member. The ground is refracted so that the light enclosed in the transparent member is reduced, the amount of light emitted from the transparent member is increased, and the brightness of the light emitting diode wafer is increased.
用以實施發明之形態 以下，參照圖式詳細地說明本發明的實施形態。參照圖1，所示為光元件晶圓(以下，有時會簡稱為晶圓)11的正面側立體圖。Embodiments for Carrying Out the Invention Embodiments of the present invention will be described in detail below with reference to the drawings. Referring to FIG. 1, a front perspective view of an optical element wafer (hereinafter sometimes referred to as a wafer) 11 is shown.
光元件晶圓11是在藍寶石基板13上積層氮化鎵(GaN)等的晶膜層層(epitaxial layer)(積層體層)15而構成的。光元件晶圓11具有積層有晶膜層15的正面11a、和露出藍寶石基板13的背面11b。The optical element wafer 11 is configured by laminating an epitaxial layer (laminated body layer) 15 such as gallium nitride (GaN) on a sapphire substrate 13. The optical element wafer 11 includes a front surface 11 a on which the crystal film layer 15 is laminated, and a back surface 11 b on which the sapphire substrate 13 is exposed.
在此，在本實施形態的光元件晶圓11中，雖然是採用藍寶石基板13作為結晶成長用基板，但是也可以採用GaN基板或SiC基板等來替代藍寶石基板13。Here, although the sapphire substrate 13 is used as the substrate for crystal growth in the optical element wafer 11 of this embodiment, a GaN substrate, a SiC substrate, or the like may be used instead of the sapphire substrate 13.
積層體層(晶膜層)15是藉由依序使電子成為多數載子(carrier)的n型半導體層(例如n型GaN層)、成為發光層的半導體層(例如InGaN層)、電洞成為多數載子的p型半導體層(例如p型GaN層)進行晶膜生長而形成。The laminated body layer (crystal film layer) 15 is an n-type semiconductor layer (for example, an n-type GaN layer), a semiconductor layer (for example, an InGaN layer) that becomes a light-emitting layer, and holes are formed by sequentially making electrons a majority carrier. A carrier p-type semiconductor layer (for example, a p-type GaN layer) is formed by crystal film growth.
藍寶石基板13具有例如100μm的厚度，且積層體層15具有例如5μm的厚度。於積層體層15上以形成為格子狀的複數條分割預定線17來區劃而形成有複數個LED電路19。晶圓11具有形成有LED電路19的正面11a、和露出了藍寶石基板13的背面11b。The sapphire substrate 13 has a thickness of, for example, 100 μm, and the laminated body layer 15 has a thickness of, for example, 5 μm. The laminated body layer 15 is divided into a plurality of predetermined division lines 17 formed in a grid pattern to form a plurality of LED circuits 19. The wafer 11 includes a front surface 11 a on which the LED circuit 19 is formed, and a back surface 11 b on which the sapphire substrate 13 is exposed.
依據本發明實施形態的發光二極體晶片的製造方法，首先會實施準備如圖1所示的光元件晶圓11的晶圓準備步驟。此外，還實施準備已於內部形成有複數個氣泡29之透明基板21的透明基板準備步驟。According to the method for manufacturing a light-emitting diode wafer according to the embodiment of the present invention, first, a wafer preparation step of preparing an optical element wafer 11 as shown in FIG. 1 is performed. In addition, a transparent substrate preparation step of preparing a transparent substrate 21 having a plurality of bubbles 29 formed therein is also performed.
實施透明基板準備步驟之後，實施一體化步驟，該一體化步驟是如圖2(A)所示，將透明基板21的正面21a貼附到晶圓11的背面11b。圖2(B)是一體化晶圓的立體圖。After the transparent substrate preparation step is performed, an integration step is performed. The integration step is to attach the front surface 21 a of the transparent substrate 21 to the back surface 11 b of the wafer 11 as shown in FIG. 2 (A). FIG. 2 (B) is a perspective view of an integrated wafer.
透明基板21是由透明樹脂、光學玻璃、藍寶石、透明陶瓷的任一種所形成。在本實施形態中，是由比光學玻璃更有耐久性之聚碳酸酯、丙烯酸樹脂等之透明樹脂來形成透明基板。The transparent substrate 21 is formed of any one of transparent resin, optical glass, sapphire, and transparent ceramic. In this embodiment, the transparent substrate is formed of a transparent resin such as polycarbonate or acrylic resin, which is more durable than optical glass.
實施一體化步驟後，實施支撐步驟，該支撐步驟是如圖3所示，將一體化晶圓25的透明基板21貼附到外周部已貼附於環狀框架F上之切割膠帶T來形成框架單元，以透過切割膠帶T以環狀框架F支撐一體化晶圓25。After the integration step is performed, a support step is performed. This support step is formed by attaching the transparent substrate 21 of the integrated wafer 25 to the dicing tape T whose outer periphery has been attached to the ring frame F as shown in FIG. 3. The frame unit supports the integrated wafer 25 with the ring-shaped frame F through the dicing tape T.
實施支撐步驟之後，實施分割步驟，該分割步驟是將框架單元投入切削裝置，並且利用切削裝置來將一體化晶圓25切削並分割成一個個的發光二極體晶片。參照圖4來說明此分割步驟。After the supporting step is performed, a dividing step is performed. The dividing step is to put the frame unit into a cutting device, and use the cutting device to cut and divide the integrated wafer 25 into individual light emitting diode wafers. This division step will be described with reference to FIG. 4.
此分割步驟是使用例如已廣為周知的切削裝置來實施。如圖4所示，切削裝置的切削單元10包含有主軸殼體12、可旋轉地插入主軸殼體12中的圖未示的主軸、和裝設在主軸的前端的切削刀14。This dividing step is performed using, for example, a well-known cutting device. As shown in FIG. 4, the cutting unit 10 of the cutting device includes a main shaft housing 12, a main shaft (not shown) rotatably inserted into the main shaft housing 12, and a cutting blade 14 installed at a front end of the main shaft.
切削刀14的切割刃是以例如用鍍鎳方式來將鑽石磨粒固定而成的電鑄磨石所形成，且其前端形狀是做成三角形、四角形、或半圓形。The cutting edge of the cutting blade 14 is formed by, for example, an electroformed grindstone in which diamond abrasive grains are fixed by nickel plating, and the front end shape is made into a triangle, a quadrangle, or a semicircle.
切削刀14的大致上半部分是以刀片罩(blade cover)(輪罩(wheel cover))16來覆蓋，在刀片罩16上配設有於切削刀14的裏側及近前側水平地伸長的一對(圖中僅顯示1條)冷卻噴嘴18。A substantially upper part of the cutting blade 14 is covered with a blade cover (wheel cover) 16. The blade cover 16 is provided with a horizontally elongated one on the back side and the front side of the cutting blade 14. Pairs (only one is shown) of cooling nozzles 18.
在分割步驟中，是隔著框架單元的切割膠帶T而在切削裝置的工作夾台20上吸引保持一體化晶圓25，而環狀框架F則是以圖未示的夾具夾持來固定。In the dividing step, the integrated wafer 25 is attracted and held on the work clamp table 20 of the cutting device through the cutting tape T of the frame unit, and the ring frame F is held by a clamp (not shown).
然後，一邊使切削刀14朝箭頭R方向高速旋轉一邊切入晶圓11的分割預定線17直到切削刀14的前端到達切割膠帶T為止，並且從冷卻噴嘴18朝向切削刀14及晶圓11的加工點供給著切削液來將一體化晶圓25朝箭頭X1方向加工進給，藉此形成沿著晶圓11的分割預定線17切斷晶圓11及透明基板21的切斷溝27。Then, while cutting the cutter 14 at a high speed in the direction of the arrow R, it cuts into the planned division line 17 of the wafer 11 until the tip of the cutter 14 reaches the dicing tape T, and processes from the cooling nozzle 18 toward the cutter 14 and the wafer 11 Cutting fluid is supplied at a point to process and feed the integrated wafer 25 in the direction of the arrow X1, thereby forming a cutting groove 27 that cuts the wafer 11 and the transparent substrate 21 along the planned division line 17 of the wafer 11.
將切削單元10在Y軸方向上分度進給，並且沿著朝第1方向伸長的分割預定線17逐次地形成同樣的切斷溝27。其次，將工作夾台20旋轉90°之後，沿著於與第1方向正交的第2方向上伸長之全部的分割預定線17形成同樣的切斷溝27，以形成圖5所示之狀態，藉此將一體化晶圓25分割成如圖6所示的發光二極體晶片31。The cutting unit 10 is fed in increments in the Y-axis direction, and the same cutting groove 27 is successively formed along a predetermined division line 17 extending in the first direction. Next, after the work clamp 20 is rotated by 90 °, the same cut grooves 27 are formed along all the planned division lines 17 extending in the second direction orthogonal to the first direction to form the state shown in FIG. 5. Thus, the integrated wafer 25 is divided into the light-emitting diode wafer 31 as shown in FIG. 6.
在上述之實施形態中，雖然是將切削裝置使用在將一體化晶圓25分割成一個個的發光二極體晶片31上，但是也可以作成：將對晶圓11及透明基板21具有穿透性之波長的雷射光束沿著分割預定線13朝晶圓11照射，並且在晶圓11及透明基板21的內部於厚度方向上形成複數層的改質層，接著，對一體化晶圓25賦與外力，來以改質層為分割起點將一體化晶圓25分割成一個個的發光二極體晶片31。In the above-mentioned embodiment, the cutting device is used for the light-emitting diode wafer 31 that divides the integrated wafer 25 into individual wafers. However, it is also possible to make the wafer 11 and the transparent substrate 21 transparent. Laser beams of a characteristic wavelength are irradiated toward the wafer 11 along the planned division line 13, and a plurality of modified layers are formed in the thickness direction inside the wafer 11 and the transparent substrate 21, and then the integrated wafer 25 is formed. An external force is applied to divide the integrated wafer 25 into individual light-emitting diode wafers 31 with the reforming layer as a starting point for division.
圖6所示的發光二極體晶片31是在正面具有LED電路19之LED13A的背面貼附有透明構件21A。此外，在透明構件21A的內部形成有複數個氣泡29。In the light-emitting diode wafer 31 shown in FIG. 6, a transparent member 21A is attached to the back surface of the LED 13A having the LED circuit 19 on the front surface. In addition, a plurality of air bubbles 29 are formed inside the transparent member 21A.
因此，在圖6所示之發光二極體晶片31上，除了會使透明構件的表面積增大之外，也會使光在透明構件內複雜地折射，以使被封閉在透明構件內之光減少，而使從透明構件21A射出之光的量增大，並使發光二極體晶片31的亮度提升。Therefore, on the light-emitting diode wafer 31 shown in FIG. 6, in addition to increasing the surface area of the transparent member, the light is also complicatedly refracted in the transparent member, so that the light enclosed in the transparent member is caused. Decreasing the amount of light emitted from the transparent member 21A increases the brightness of the light-emitting diode wafer 31.
10‧‧‧切削單元10‧‧‧ cutting unit
11‧‧‧光元件晶圓(晶圓)11‧‧‧Optical element wafer (wafer)
11a、21a‧‧‧正面11a, 21a‧‧‧ Front
11b‧‧‧背面11b‧‧‧Back
12‧‧‧主軸殼體12‧‧‧ Spindle housing
13‧‧‧藍寶石基板13‧‧‧Sapphire substrate
13A‧‧‧LED13A‧‧‧LED
14‧‧‧切削刀14‧‧‧ Cutter
15‧‧‧積層體層15‧‧‧ Stratified body
16‧‧‧刀片罩16‧‧‧Blade cover
17‧‧‧分割預定線17‧‧‧ divided scheduled line
18‧‧‧冷卻噴嘴18‧‧‧ cooling nozzle
19‧‧‧LED電路19‧‧‧LED circuit
20‧‧‧工作夾台20‧‧‧Work clamp table
21‧‧‧透明基板21‧‧‧ transparent substrate
21A‧‧‧透明構件21A‧‧‧Transparent member
24‧‧‧聚光器(雷射頭)24‧‧‧ Condenser (laser head)
25‧‧‧一體化晶圓25‧‧‧Integrated wafer
27‧‧‧切斷溝27‧‧‧ cut off the trench
29‧‧‧氣泡29‧‧‧ Bubble
31‧‧‧發光二極體晶片31‧‧‧light-emitting diode chip
R、X1‧‧‧箭頭R, X1‧‧‧ arrows
T‧‧‧切割膠帶T‧‧‧Cutting Tape
F‧‧‧環狀框架F‧‧‧ ring frame
X、Y、Z‧‧‧方向X, Y, Z‧‧‧ directions
圖1是光元件晶圓的正面側立體圖。 圖2(A)是顯示將具有複數個貫通孔的透明基板之正面貼附在晶圓之背面而進行一體化之一體化步驟的立體圖，圖2(B)是一體化晶圓的立體圖。 圖3是顯示透過切割膠帶而將一體化晶圓支撐於環狀框架上的支撐步驟的立體圖。 圖4是顯示將一體化晶圓分割成發光二極體晶片的分割步驟的立體圖。 圖5是分割步驟結束後之一體化晶圓的立體圖。 圖6是本發明實施形態之發光二極體晶片的立體圖。FIG. 1 is a front perspective view of an optical element wafer. FIG. 2 (A) is a perspective view showing an integration step of attaching a front surface of a transparent substrate having a plurality of through holes to a back surface of a wafer for integration, and FIG. 2 (B) is a perspective view of the integrated wafer. FIG. 3 is a perspective view showing a supporting step of supporting an integrated wafer on a ring frame through a dicing tape. FIG. 4 is a perspective view showing a step of dividing an integrated wafer into light-emitting diode wafers. FIG. 5 is a perspective view of the integrated wafer after the dividing step. FIG. 6 is a perspective view of a light emitting diode wafer according to an embodiment of the present invention.
Claims (3)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016-195902 | 2016-10-03 | ||
| JP2016195902A JP2018060870A (en) | 2016-10-03 | 2016-10-03 | Method for manufacturing light-emitting diode chip and light-emitting diode chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201814199A true TW201814199A (en) | 2018-04-16 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW106130121A TW201814199A (en) | 2016-10-03 | 2017-09-04 | Manufacturing method of light emitting diode chip and light emitting diode chip including a wafer preparing step, a transparent substrate preparing step, an integrating step and a cutting step, and the light emitting diode chip is being provided with a sufficient brightness |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2018060870A (en) |
| KR (1) | KR20180037107A (en) |
| CN (1) | CN107895714A (en) |
| TW (1) | TW201814199A (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4232585B2 (en) * | 2003-09-17 | 2009-03-04 | 豊田合成株式会社 | Light emitting device |
| JP2007266356A (en) * | 2006-03-29 | 2007-10-11 | Kyocera Corp | Light-emitting device and illuminator using the same |
| JP2011009305A (en) * | 2009-06-23 | 2011-01-13 | Koito Mfg Co Ltd | Light-emitting module |
| KR101726807B1 (en) * | 2010-11-01 | 2017-04-14 | 삼성전자주식회사 | Light Emitting Device |
| JP2014239123A (en) * | 2013-06-06 | 2014-12-18 | 株式会社ディスコ | Processing method |
| JP2015192100A (en) * | 2014-03-28 | 2015-11-02 | 豊田合成株式会社 | Light-emitting element and method of manufacturing light-emitting element |
| TW201614870A (en) * | 2014-10-08 | 2016-04-16 | Toshiba Kk | Semiconductor light emitting device and method for manufacturing the same |
-
2016
- 2016-10-03 JP JP2016195902A patent/JP2018060870A/en active Pending
-
2017
- 2017-09-04 TW TW106130121A patent/TW201814199A/en unknown
- 2017-09-20 CN CN201710851015.2A patent/CN107895714A/en active Pending
- 2017-09-22 KR KR1020170122609A patent/KR20180037107A/en not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
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| CN107895714A (en) | 2018-04-10 |
| KR20180037107A (en) | 2018-04-11 |
| JP2018060870A (en) | 2018-04-12 |
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