TW201832380A - Manufacturing method of light-emitting diode and light-emitting diode chip by sticking the front surface of a first transparent substrate having bubbles therein, and affixing the front surface of a second transparent substrate having through holes on the whole surface, etc. - Google Patents

Abstract

The invention provides a method for producing a light-emitting diode chip and a light-emitting diode chip which can obtain sufficient brightness. The method of manufacturing a light-emitting diode chip comprises: a wafer preparation step to prepare a wafer having a laminate layer on the transparent substrate for crystal growth, an LED circuit is formed in each region partitioned by a plurality of predetermined division lines crossing each other on the front surface of the laminate layer. The laminate layer includes semiconductor layers having a light-emitting layer. The method includes a first transparent substrate affixing step of sticking the front surface of a first transparent substrate having a plurality of bubbles therein to the back of the wafer to form a first integrated wafer. The method also includes a second transparent substrate affixing step, after implementing the first transparent substrate affixing step, of affixing the front surface of a second transparent substrate having a plurality of through holes on the whole surface to the back of the first transparent substrate to form a second integrated wafer. The method further includes a cutting step to cut the wafer, the first transparent substrate, and the second transparent substrate together to divide the second integrated wafer into individual light-emitting diode chips along a predetermined cutting line.

Description

Manufacturing method of light emitting diode wafer and light emitting diode wafer

FIELD OF THE INVENTION The present invention relates to a method for manufacturing a light emitting diode wafer and a light emitting diode wafer.

BACKGROUND OF THE INVENTION On the front surface of a substrate for crystal growth such as a sapphire substrate, a GaN substrate, and a SiC substrate, a multilayer body layer formed by laminating a plurality of n-type semiconductor layers, light-emitting layers, and p-type semiconductor layers is formed, and on the multilayer body layers A wafer in which a plurality of light emitting elements such as LEDs (Light Emitting Diodes) are formed in an area defined by a plurality of intersecting division lines is cut along the division line and divided into The light-emitting element wafers one by one, and the divided light-emitting element wafers can be widely used in various electric devices such as mobile phones, personal computers, and lighting equipment.

Since the light emitted from the light-emitting layer of the light-emitting element wafer is isotropic, even if it is irradiated to the inside of the substrate for crystal growth, the light is emitted from the back and sides of the substrate. However, since the light that has been irradiated to the inside of the substrate has an incident angle above the critical angle at the interface with the air layer, the light is totally reflected on the interface and is enclosed inside the substrate. Since it is emitted from the substrate to the outside, there is a problem that the brightness of the light emitting element wafer is reduced.

In order to solve this problem, Japanese Patent Laid-Open No. 2014-175354 has described a light-emitting diode (LED) that is formed on the substrate in order to prevent the light emitted from the light-emitting layer from being enclosed inside the substrate. A transparent member is attached to the back of the lens to increase brightness. Prior Art Literature Patent Literature

Patent Document 1: Japanese Patent Laid-Open No. 2014-175354

SUMMARY OF THE INVENTION Problems to be Solved by the Invention However, in the light-emitting diode disclosed in Patent Document 1, although the brightness can be slightly improved by attaching a transparent member to the back surface of the substrate, there is still a problem that sufficient brightness cannot be obtained. .

The present invention has been made in view of such points, and an object thereof is to provide a method for manufacturing a light emitting diode wafer and a light emitting diode wafer capable of obtaining sufficient brightness. Means to solve the problem

According to the invention described in claim 1, a method for manufacturing a light emitting diode wafer can be provided. The method for manufacturing the light emitting diode wafer includes: a wafer preparation step, preparing a wafer, and the wafer is crystallized. A growth substrate has a laminated body layer, and an LED circuit is formed in each of the areas defined by a plurality of predetermined division lines crossing each other on the front side of the laminated body layer. The laminated body layer is formed with a plurality of layers including a light emitting layer. A semiconductor layer; a first transparent substrate attaching step, attaching a front surface of the first transparent substrate to a back surface of the wafer to form a first integrated wafer, wherein the first transparent substrate is formed with a plurality of bubbles inside; the second A transparent substrate attaching step. After the first transparent substrate attaching step has been performed, a front surface of a second transparent substrate covering a plurality of through holes formed on the entire surface is attached to a rear surface of the first transparent substrate to form a second unit. A wafer; and a dividing step, cutting the wafer along with the first and second transparent substrates along the predetermined dividing line, to divide the second integrated wafer into individual ones Photo-diode chip.

Preferably, the first and second transparent substrates are formed of any one of transparent ceramic, optical glass, sapphire, and transparent resin, and the first and second transparent substrate attaching steps are performed using a transparent adhesive. Implementation.

According to the invention described in claim 4, it is possible to provide a light-emitting diode wafer having a light-emitting diode in which an LED circuit is formed on a front surface, and the front surface is attached to the light-emitting diode. A first transparent member having a plurality of air bubbles on the back surface of the body and a second transparent member having a plurality of through holes attached to the back surface of the first transparent member and having a front surface. Invention effect

The light-emitting diode wafer of the present invention attaches the front surface of the first transparent member having a plurality of air bubbles to the back of the LED, and attaches the front surface of the second transparent member having a plurality of through holes to the first The back surface of the transparent member complexly refracts light in the first and second transparent members, reduces the light enclosed in the first and second transparent members, and allows light emitted from the first and second transparent members to be reduced. The amount of light is increased and the brightness of the light emitting diode wafer is increased.

Embodiments for Carrying Out the Invention Embodiments of the present invention will be described in detail below with reference to the drawings. Referring to FIG. 1, a front perspective view of an optical element wafer (hereinafter sometimes referred to as a wafer) 11 is shown.

The optical element wafer 11 is formed by laminating an epitaxial layer (laminated body layer) 15 such as gallium nitride (GaN) on the sapphire substrate 13. The optical element wafer 11 includes a front surface 11 a on which the crystal film layer 15 is laminated, and a back surface 11 b on which the sapphire substrate 13 is exposed.

Here, although the sapphire substrate 13 is used as the substrate for crystal growth in the optical element wafer 11 of this embodiment, a GaN substrate, a SiC substrate, or the like may be used instead of the sapphire substrate 13.

The laminated body layer (crystal film layer) 15 is an n-type semiconductor layer (for example, an n-type GaN layer), a semiconductor layer (for example, an InGaN layer) that becomes a light-emitting layer, and holes are formed by sequentially making electrons a majority carrier. A carrier p-type semiconductor layer (for example, a p-type GaN layer) is formed by crystal film growth.

The sapphire substrate 13 has a thickness of, for example, 100 μm, and the laminated body layer 15 has a thickness of, for example, 5 μm. The laminated body layer 15 is divided into a plurality of predetermined division lines 17 formed in a grid pattern to form a plurality of LED circuits 19. The wafer 11 includes a front surface 11 a on which the LED circuit 19 is formed, and a back surface 11 b on which the sapphire substrate 13 is exposed.

According to the method for manufacturing a light-emitting diode wafer according to the embodiment of the present invention, first, a wafer preparation step of preparing an optical element wafer 11 as shown in FIG. 1 is performed. In addition, a transparent substrate preparation step is also performed. The transparent substrate preparation step prepares a first transparent substrate having a plurality of bubbles formed therein, and a second transparent substrate having a plurality of through holes formed over the entire surface.

After the transparent substrate preparation step is performed, a first transparent substrate attaching step is performed. As shown in FIG. 2 (A), the first transparent substrate attaching step is a front surface of the first transparent substrate 21 having a plurality of bubbles formed therein. 21a is attached to the back surface 11b of the wafer 11. FIG. 2 (B) is a perspective view of the first integrated wafer 25.

The first transparent substrate 21 is formed of any one of transparent resin, optical glass, sapphire, and transparent ceramic. In this embodiment, the first and second transparent substrates are formed of a transparent resin such as polycarbonate or acrylic resin, which is more durable than optical glass.

After the first transparent substrate attaching step has been performed, as shown in FIG. 3 (A), the front surface 21a of the second transparent substrate 21A covering the entire surface with a plurality of through holes 29A is attached to the first integrated wafer 25 The back surface of the first transparent substrate 21 (the second transparent substrate attaching step) forms a second integrated wafer 25A as shown in FIG. 3 (B). The material of the second transparent substrate 21A is also the same as that of the first transparent substrate 21 described above.

Instead of the first transparent substrate attaching step and the second transparent substrate attaching step described above, it is provided that after the front surface of the second transparent substrate 21A is attached to the back surface of the first transparent substrate 21 to form an integration, the The back surface 11 b of the wafer 11 may be attached to the front surface 21 a of the first transparent substrate 21.

After the second transparent substrate attaching step has been performed, a supporting step is performed. As shown in FIG. 4, the second transparent substrate 21A of the second integrated wafer 25A is attached to the outer periphery and the ring is attached to the ring. The dicing tape T on the frame F forms a frame unit, and the second integrated wafer 25A is supported by the ring-shaped frame F through the dicing tape T.

After the supporting step has been performed, a slicing step is performed. The slicing step is to put the frame unit into a cutting device and use the cutting device to cut the second integrated wafer 25A to divide it into individual light-emitting diode wafers. This division step will be described with reference to FIG. 5.

This dividing step is performed using, for example, a well-known cutting device. As shown in FIG. 5, the cutting unit 10 of the cutting device includes a spindle housing 12, a spindle (not shown) rotatably inserted into the spindle housing 12, and a cutting blade 14 installed at a front end of the spindle.

The cutting edge of the cutting blade 14 is formed by, for example, an electroformed grindstone in which diamond abrasive grains are fixed by nickel plating, and the front end shape is made into a triangle, a quadrangle, or a semicircle.

Approximately the upper half of the cutting blade 14 is covered by a blade cover (wheel cover) 16. The blade cover 16 is provided with a horizontally elongated one on the inner side and near the front side of the cutting blade 14. Pairs (only one is shown) of cooling nozzles 18.

In the dividing step, the second integrated wafer 25A is attracted and held on the work clamp table 20 of the cutting device via the cutting tape T of the frame unit, and the ring frame F is fixed by holding a clamp (not shown). .

Then, the cutting blade 14 is cut into the predetermined division line 17 of the wafer 11 while rotating at a high speed in the direction of the arrow R until the tip of the cutting blade 14 reaches the cutting tape T, and from the cooling nozzle 18 toward the cutting blade 14 and the wafer 11 The second integrated wafer 25A is processed and fed in the direction of the arrow X1 while the cutting fluid is supplied at the processing point, thereby forming the planned division line 17 of the wafer 11 to cut the wafer 11 and the first and second transparent substrates 21, 21A 的 剪 沟 27。 21A of the cut groove 27.

The cutting unit 10 is fed in increments in the Y-axis direction, and the same cutting groove 27 is successively formed along a predetermined division line 17 extending in the first direction. Next, after rotating the work clamp 20 by 90 °, the same cut grooves 27 are formed along all the planned division lines 17 extending in the second direction orthogonal to the first direction to form the state shown in FIG. 6. Thus, the second integrated wafer 25A is divided into the light-emitting diode wafer 31 as shown in FIG. 7.

In the embodiment described above, a cutting device is used for the light-emitting diode wafer 31 in which the second integrated wafer 25A is divided into individual pieces, but it may be provided that the wafer 11 and the transparent substrate 21, A laser beam having a penetrating wavelength of 21A is irradiated toward the wafer 11 along the planned division line 13 and a plurality of layers are formed in the thickness direction inside the wafer 11 and the first transparent substrate 21 and the second transparent substrate 21A. The reforming layer then applies an external force to the second integrated wafer 25A to divide the second integrated wafer 25A into individual light-emitting diode wafers 31 with the reforming layer as a division starting point.

The light-emitting diode wafer 31 shown in FIG. 7 has a first transparent member 21 'attached to the back surface of the LED 13A having the LED circuit 19 on the front side, and the first transparent member 21' has a plurality of air bubbles 29 inside. A second transparent member 21A 'is attached to the back surface of the first transparent member 21', and the second transparent member 21A 'has a plurality of through holes 29A.

Therefore, in the light-emitting diode wafer 31 shown in FIG. 7, in addition to increasing the surface areas of the first and second transparent members 21 ′ and 21A ′, light is also allowed to be in the first and second transparent members 21 ′. 21A ′ is refracted in a complicated manner so that the light enclosed in the transparent member is reduced, the amount of light emitted from the transparent members 21 ′, 21A ′ is increased, and the brightness of the light-emitting diode wafer 31 is increased.

10‧‧‧ cutting unit

11‧‧‧Optical element wafer (wafer)

11a, 21a‧‧‧ Front

11b‧‧‧Back

12‧‧‧ Spindle housing

13‧‧‧Sapphire substrate

13A‧‧‧LED

14‧‧‧ Cutter

15‧‧‧ Stratified body

16‧‧‧Blade cover

17‧‧‧ divided scheduled line

18‧‧‧ cooling nozzle

19‧‧‧LED circuit

20‧‧‧Work clamp table

21‧‧‧The first transparent substrate

21A‧‧‧The second transparent substrate

21’‧‧‧The first transparent member

21A’‧‧‧The second transparent member

25‧‧‧The first integrated wafer

25A‧‧‧2nd integrated wafer

27‧‧‧ cut off the trench

29‧‧‧ Bubble

29A‧‧‧through hole

31‧‧‧light-emitting diode chip

R, X1‧‧‧ arrows

T‧‧‧Cutting Tape

F‧‧‧ ring frame

X, Y, Z‧‧‧ directions

FIG. 1 is a front perspective view of an optical element wafer. FIG. 2 (A) is a perspective view showing a first transparent substrate attaching step in which a front surface of a first transparent substrate is attached to a back surface of a wafer for integration, and FIG. 2 (B) is a perspective view of a first integrated wafer. . FIG. 3 (A) is a perspective view showing a second transparent substrate attaching step in which the front surface of the second transparent substrate is attached to the back surface of the first transparent substrate of the first integrated wafer, and FIG. 3 (B) This is a perspective view of a second integrated wafer. FIG. 4 is a perspective view showing a supporting step of supporting a second integrated wafer with a ring frame through a dicing tape. FIG. 5 is a perspective view showing a step of dividing a second integrated wafer into light-emitting diode wafers. FIG. 6 is a perspective view of a second integrated wafer after the dividing step is completed. FIG. 7 is a perspective view of a light emitting diode wafer according to an embodiment of the present invention.

Claims (4)

A method for manufacturing a light-emitting diode wafer. The method for manufacturing a light-emitting diode wafer is characterized by comprising: a wafer preparation step, preparing a wafer, the wafer having a laminated body layer on a transparent substrate for crystal growth, An LED circuit is formed in each area defined by a plurality of intersecting division lines on the front side of the multilayer body layer, and the multilayer body layer is formed with a plurality of semiconductor layers including a light emitting layer; a first transparent substrate attaching step; , Attaching the front surface of the first transparent substrate to the back of the wafer to form a first integrated wafer, wherein the first transparent substrate is formed with a plurality of bubbles inside; the second transparent substrate attaching step has been implemented 1 After the transparent substrate attaching step, attach the front surface of the second transparent substrate covering the entire surface with a plurality of through-holes to the rear surface of the first transparent substrate to form a second integrated wafer; The predetermined dividing line cuts the wafer together with the first and second transparent substrates to divide the second integrated wafer into individual light emitting diode wafers. For example, the method for manufacturing a light emitting diode wafer according to claim 1, wherein the first transparent substrate attaching step and the second transparent substrate attaching step are replaced, and the front surface of the second transparent substrate is attached to the first transparent substrate attaching step. After the back surface of the first transparent substrate is integrated, the back surface of the wafer is attached to the front surface of the first transparent substrate. The method for manufacturing a light-emitting diode wafer according to claim 1, wherein the first and second transparent substrates are formed of any one of transparent ceramics, optical glass, sapphire, and transparent resin, and the first and second The transparent substrate attaching step is performed using a transparent adhesive. A light-emitting diode wafer, which is characterized by comprising: a light-emitting diode in which an LED circuit is formed on a front surface; a front surface attached to a back surface of the light-emitting diode; and a plurality of air bubbles inside the light-emitting diode wafer. A first transparent member and a second transparent member having a plurality of through holes attached to the back surface of the first transparent member and having a plurality of through holes.