TW201822382A - Light-emitting diode chip manufacturing method and light-emitting diode chip - Google Patents
Light-emitting diode chip manufacturing method and light-emitting diode chip Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 81
- 230000010354 integration Effects 0.000 claims abstract description 13
- 239000013078 crystal Substances 0.000 claims abstract description 10
- 239000004065 semiconductor Substances 0.000 claims abstract description 8
- 238000002360 preparation method Methods 0.000 claims abstract description 5
- 235000012431 wafers Nutrition 0.000 claims description 93
- 238000000034 method Methods 0.000 claims description 12
- 229910052594 sapphire Inorganic materials 0.000 claims description 11
- 239000010980 sapphire Substances 0.000 claims description 11
- 239000005304 optical glass Substances 0.000 claims description 4
- 239000011347 resin Substances 0.000 claims description 4
- 229920005989 resin Polymers 0.000 claims description 4
- 239000000853 adhesive Substances 0.000 claims description 3
- 230000001070 adhesive effect Effects 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 238000005488 sandblasting Methods 0.000 claims description 3
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 238000005520 cutting process Methods 0.000 abstract description 22
- 230000011218 segmentation Effects 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 description 7
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 5
- 238000001816 cooling Methods 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000002173 cutting fluid Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 238000002407 reforming Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
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- Manufacturing & Machinery (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
Description
發明領域 本發明是有關於一種發光二極體晶片的製造方法及發光二極體晶片。FIELD OF THE INVENTION The present invention relates to a method for manufacturing a light emitting diode wafer and a light emitting diode wafer.
發明背景 在藍寶石基板、GaN基板、SiC基板等的結晶成長用基板的正面上形成有將n型半導體層、發光層、p型半導體層積層複數層而成的積層體層,並且在此積層體層上藉由交叉的複數條分割預定線所區劃出的區域中形成有複數個LED(發光二極體(Light Emitting Diode))等之發光元件的晶圓,是沿著分割預定線切斷而分割成一個個的發光元件晶片,並且已分割的發光元件晶片是廣泛地應用在手機、個人電腦、照明機器等的各種電氣機器上。BACKGROUND OF THE INVENTION On the front surface of a substrate for crystal growth such as a sapphire substrate, a GaN substrate, and a SiC substrate, a multilayer body layer formed by laminating a plurality of n-type semiconductor layers, light-emitting layers, and p-type semiconductor layers is formed, and on the multilayer body layers A wafer in which a plurality of light emitting elements such as LEDs (Light Emitting Diodes) are formed in an area defined by a plurality of intersecting division lines is cut along the division line and divided into The light-emitting element wafers are one by one, and the divided light-emitting element wafers are widely used in various electric devices such as mobile phones, personal computers, and lighting equipment.
由於從發光元件晶片的發光層射出的光具有各向同性,所以即使被照射到結晶成長用基板的內部也會使光從基板的背面及側面射出。然而,由於已被照射到基板之內部的光之中在與空氣層之間的界面上的入射角為臨界角以上的光會在界面上進行全反射而被封閉在基板內部,並不會有從基板射出到外部之情形,所以會有導致發光元件晶片的亮度降低的問題。Since the light emitted from the light-emitting layer of the light-emitting element wafer is isotropic, even if it is irradiated to the inside of the substrate for crystal growth, the light is emitted from the back and sides of the substrate. However, since the light that has been irradiated to the inside of the substrate has an incident angle above the critical angle at the interface with the air layer, the light is totally reflected on the interface and is enclosed inside the substrate. Since it is emitted from the substrate to the outside, there is a problem that the brightness of the light emitting element wafer is reduced.
為了解決此問題,在日本專利特開2014-175354號公報中已記載有下述之發光二極體(LED):為了抑制從發光層射出的光被封閉在基板的內部,而形成為在基板的背面貼附透明構件來謀求亮度的提升。 先前技術文獻 專利文獻In order to solve this problem, Japanese Patent Laid-Open No. 2014-175354 has described a light-emitting diode (LED) that is formed on the substrate in order to prevent the light emitted from the light-emitting layer from being enclosed inside the substrate. A transparent member is attached to the back of the lens to increase brightness. Prior Art Literature Patent Literature
專利文獻1:日本專利特開2014-175354號公報Patent Document 1: Japanese Patent Laid-Open No. 2014-175354
發明概要 發明欲解決之課題 然而,在專利文獻1所揭示的發光二極體中,雖然可藉由在基板的背面貼附透明構件而稍微提升亮度,但是仍有無法得到充分的亮度的問題。SUMMARY OF THE INVENTION Problems to be Solved by the Invention However, in the light-emitting diode disclosed in Patent Document 1, although the brightness can be slightly increased by attaching a transparent member to the back surface of the substrate, there is still a problem that sufficient brightness cannot be obtained.
本發明是有鑒於像這樣的點而作成的發明,其目的在於提供一種能夠得到充分的亮度的發光二極體晶片的製造方法及發光二極體晶片。 用以解決課題之手段The present invention has been made in view of such points, and an object thereof is to provide a method for manufacturing a light emitting diode wafer and a light emitting diode wafer capable of obtaining sufficient brightness. Means to solve the problem
依據請求項1的發明,可提供一種發光二極體晶片的製造方法,該發光二極體晶片的製造方法之特徵在於具備有: 晶圓準備步驟,準備晶圓,該晶圓具有在結晶成長用之透明基板上形成有包含發光層的複數層半導體層之積層體層,並於在該積層體層的正面以相互交叉之複數條分割預定線所區劃出之各區域中各自形成有LED電路; 透明基板加工步驟,在涵蓋整個面具有複數個貫通孔的透明基板的正面對應該晶圓的各LED電路來形成複數條溝; 一體化步驟,在實施該透明基板加工步驟後,將該透明基板的正面貼附於該晶圓的背面以形成一體化晶圓;及 分割步驟,沿著該分割預定線將該晶圓和該透明基板一起切斷以將該一體化晶圓分割成一個個的發光二極體晶片。According to the invention of claim 1, a method for manufacturing a light-emitting diode wafer can be provided. The method for manufacturing a light-emitting diode wafer includes: a wafer preparation step, preparing a wafer, and the wafer having crystal growth A transparent substrate is used to form a multilayer body layer including a plurality of semiconductor layers including a light-emitting layer, and LED circuits are formed on each of the areas defined by a plurality of divided predetermined lines crossing each other on the front surface of the multilayer body layer; transparent In the substrate processing step, a plurality of grooves are formed corresponding to the LED circuits of the wafer on the front surface of the transparent substrate including a plurality of through holes on the entire surface; an integration step, after the transparent substrate processing step is performed, the transparent substrate The front surface is attached to the back surface of the wafer to form an integrated wafer; and a slicing step of cutting the wafer and the transparent substrate together along the predetermined division line to divide the integrated wafer into light-emitting sections. Diode wafer.
較理想的是,在透明基板加工步驟中所形成之溝的截面形狀為三角形、四角形、或半圓形狀的任一種。較理想的是,在透明基板加工步驟中所形成的溝是藉由切削刀、蝕刻、噴砂、雷射的任一種方式而形成。Preferably, the cross-sectional shape of the groove formed in the transparent substrate processing step is any one of a triangle, a quadrangle, or a semi-circular shape. Preferably, the grooves formed in the processing step of the transparent substrate are formed by any one of a cutter, etching, sandblasting, and laser.
較理想的是,該透明基板是以透明陶瓷、光學玻璃、藍寶石、透明樹脂的任一種所形成,並且在該一體化步驟中該透明基板是利用透明接著劑來接著於晶圓。Preferably, the transparent substrate is formed of any one of transparent ceramic, optical glass, sapphire, and transparent resin, and in the integration step, the transparent substrate is adhered to the wafer using a transparent adhesive.
依據請求項5記載的發明,可提供一種發光二極體晶片,該發光二極體晶片具備:於正面形成有LED電路的發光二極體、及貼附在該發光二極體的背面之涵蓋整個面具有複數個貫通孔的透明構件,且在該透明構件之與該發光二極體的貼附面上形成有溝。 發明效果According to the invention described in claim 5, it is possible to provide a light-emitting diode wafer including a light-emitting diode in which an LED circuit is formed on a front surface, and a cover attached to a back surface of the light-emitting diode. A transparent member having a plurality of through holes on the entire surface, and a groove is formed on an attachment surface of the transparent member and the light emitting diode. Invention effect
由於本發明的發光二極體晶片是在貼附於LED的背面之透明構件的正面形成溝並進而在透明構件上形成有複數個貫通孔,所以除了會使透明構件的表面積增大之外,也會使光在透明構件內複雜地折射,以使被封閉在透明構件內之光減少,而使從透明構件射出之光的量增大並使發光二極體晶片的亮度提升。Since the light-emitting diode wafer of the present invention forms grooves on the front surface of the transparent member attached to the back of the LED and further forms a plurality of through holes in the transparent member, in addition to increasing the surface area of the transparent member, The light is also complicatedly refracted in the transparent member, so that the light enclosed in the transparent member is reduced, the amount of light emitted from the transparent member is increased, and the brightness of the light emitting diode wafer is increased.
用以實施發明之形態 以下,參照圖式詳細地說明本發明的實施形態。參照圖1,所示為光元件晶圓(以下,有時會簡稱為晶圓)11的正面側立體圖。Embodiments for Carrying Out the Invention Embodiments of the present invention will be described in detail below with reference to the drawings. Referring to FIG. 1, a front perspective view of an optical element wafer (hereinafter sometimes referred to as a wafer) 11 is shown.
光元件晶圓11是在藍寶石基板13上積層氮化鎵(GaN)等的晶膜層(epitaxial layer)(積層體層)15而構成的。光元件晶圓11具有積層有晶膜層15的正面11a、和露出藍寶石基板13的背面11b。The optical element wafer 11 is formed by laminating an epitaxial layer (laminated body layer) 15 such as gallium nitride (GaN) on the sapphire substrate 13. The optical element wafer 11 includes a front surface 11 a on which the crystal film layer 15 is laminated, and a back surface 11 b on which the sapphire substrate 13 is exposed.
在此,在本實施形態的光元件晶圓11中,雖然是採用藍寶石基板13作為結晶成長用基板,但是也可以採用GaN基板或SiC基板等來替代藍寶石基板13。Here, although the sapphire substrate 13 is used as the substrate for crystal growth in the optical element wafer 11 of this embodiment, a GaN substrate, a SiC substrate, or the like may be used instead of the sapphire substrate 13.
積層體層(晶膜層)15是藉由依序使電子成為多數載子(carrier)的n型半導體層(例如n型GaN層)、成為發光層的半導體層(例如InGaN層)、電洞成為多數載子的p型半導體層(例如p型GaN層)進行晶膜生長而形成。The laminated body layer (crystal film layer) 15 is an n-type semiconductor layer (for example, an n-type GaN layer), a semiconductor layer (for example, an InGaN layer) that becomes a light-emitting layer, and holes are formed by sequentially making electrons a majority carrier. A carrier p-type semiconductor layer (for example, a p-type GaN layer) is formed by crystal film growth.
藍寶石基板13具有例如100μm的厚度,且積層體層15具有例如5μm的厚度。於積層體層15上以形成為格子狀的複數條分割預定線17來區劃而形成有複數個LED電路19。晶圓11具有形成有LED電路19的正面11a、和露出了藍寶石基板13的背面11b。The sapphire substrate 13 has a thickness of, for example, 100 μm, and the laminated body layer 15 has a thickness of, for example, 5 μm. The laminated body layer 15 is divided into a plurality of predetermined division lines 17 formed in a grid pattern to form a plurality of LED circuits 19. The wafer 11 includes a front surface 11 a on which the LED circuit 19 is formed, and a back surface 11 b on which the sapphire substrate 13 is exposed.
依據本發明實施形態的發光二極體晶片的製造方法,首先會實施準備如圖1所示的光元件晶圓11的晶圓準備步驟。又,還實施準備如圖2之(A)所示之涵蓋整個面具有複數個貫通孔之透明基板21的透明基板準備步驟。According to the method for manufacturing a light-emitting diode wafer according to the embodiment of the present invention, first, a wafer preparation step of preparing an optical element wafer 11 as shown in FIG. 1 is performed. Furthermore, a transparent substrate preparation step of preparing a transparent substrate 21 including a plurality of through holes on the entire surface as shown in FIG. 2 (A) is also performed.
進一步,實施透明基板加工步驟,該透明基板加工步驟是在要貼附於晶圓11的背面11b之透明基板21的正面21a對應於LED電路19而形成複數條溝。此透明基板加工步驟是使用例如已廣為周知的切削裝置來實施。Further, a transparent substrate processing step is performed. The transparent substrate processing step is to form a plurality of grooves on the front surface 21 a of the transparent substrate 21 to be attached to the back surface 11 b of the wafer 11 corresponding to the LED circuit 19. This transparent substrate processing step is performed using, for example, a well-known cutting device.
如圖2之(A)所示,切削裝置的切削單元10包含有主軸殼體12、可旋轉地插入主軸殼體12中的圖未示的主軸、和裝設在主軸的前端的切削刀14。As shown in FIG. 2 (A), the cutting unit 10 of the cutting device includes a main shaft housing 12, a main shaft (not shown) rotatably inserted into the main shaft housing 12, and a cutting blade 14 installed at a front end of the main shaft. .
切削刀14的切割刃是以例如用鍍鎳方式(Nickel plating)來將鑽石磨粒固定而成的電鑄磨石所形成,且其前端形狀是作成三角形、四角形、或半圓形。The cutting edge of the cutting blade 14 is formed by, for example, an electroformed grindstone in which diamond abrasive particles are fixed by nickel plating, and the shape of the tip thereof is triangular, quadrangular, or semicircular.
切削刀14的大致上半部分是以刀片罩(blade cover)(輪罩(wheel cover))16來覆蓋,在刀片罩16上配設有於切削刀14的裏側及近前側水平地伸長的一對(圖中僅顯示1個)冷卻噴嘴18。A substantially upper part of the cutting blade 14 is covered with a blade cover (wheel cover) 16. The blade cover 16 is provided with a horizontally elongated one on the back side and the front side of the cutting blade 14. Pairs (only one is shown) of cooling nozzles 18.
在透明基板21的正面21a形成複數條溝23的透明基板加工步驟中,是將透明基板21吸引保持在圖未示的切削裝置的工作夾台上。然後,藉由一邊使切削刀14朝箭頭R方向高速旋轉,一邊在透明基板21的正面21a切入預定深度,且將保持在圖未示之工作夾台上的透明基板21朝箭頭X1方向加工進給,以藉由切削而形成在第1方向上伸長的溝23。In the transparent substrate processing step in which a plurality of grooves 23 are formed on the front surface 21a of the transparent substrate 21, the transparent substrate 21 is sucked and held on a work bench of a cutting device (not shown). Then, while turning the cutter 14 at high speed in the direction of the arrow R, the front surface 21a of the transparent substrate 21 is cut into a predetermined depth, and the transparent substrate 21 held on the work clamp table (not shown) is processed in the direction of arrow X1. The groove 23 is formed to be elongated in the first direction by cutting.
將透明基板21朝正交於箭頭X1方向的方向按晶圓11的分割預定線17的每個間距來分度進給,並且切削透明基板21的正面21a,以如圖3所示,逐次地形成朝第1方向伸長的複數條溝23。The transparent substrate 21 is fed in the direction orthogonal to the direction of the arrow X1 at each pitch of the predetermined division line 17 of the wafer 11, and the front surface 21a of the transparent substrate 21 is cut as shown in FIG. 3 one by one. A plurality of grooves 23 extending in the first direction are formed.
如圖3之(A)所示,形成在透明基板21的正面21a的複數條溝23可為僅在一個方向上伸長的形態、或者也可作成如圖4所示,在透明基板21的正面21a形成朝第1方向及朝與該第1方向正交的第2方向伸長之複數條溝23。As shown in FIG. 3 (A), the plurality of grooves 23 formed on the front surface 21a of the transparent substrate 21 may be in the form of being elongated in only one direction, or may be made as shown in FIG. 4 on the front surface of the transparent substrate 21 21a forms a plurality of grooves 23 extending in a first direction and a second direction orthogonal to the first direction.
形成在透明基板21的正面21a的溝,為如圖2之(B)所示之截面三角形的溝23、或如圖2之(C)所示之截面四角形的溝23A、或如圖2之(D)所示之截面半圓形的溝23B的任一種皆可。The groove formed on the front surface 21a of the transparent substrate 21 is a groove 23 with a triangular cross section as shown in FIG. 2 (B), or a groove 23A with a quadrangular cross section as shown in FIG. 2 (C), or as shown in FIG. 2 Any one of the grooves 23B having a semicircular cross section as shown in (D) may be used.
透明基板21是由透明樹脂、光學玻璃、藍寶石、透明陶瓷的任一種所形成。在本實施形態中,是由比光學玻璃更有耐久性之聚碳酸酯、丙烯酸等之透明樹脂來形成透明基板21。再者,作為形成溝的方法,亦可使用噴砂(sandblast)、蝕刻、雷射。The transparent substrate 21 is formed of any one of transparent resin, optical glass, sapphire, and transparent ceramic. In this embodiment, the transparent substrate 21 is formed of a transparent resin such as polycarbonate or acrylic which is more durable than optical glass. In addition, as a method of forming the groove, sandblasting, etching, and laser may be used.
於實施在透明基板21的正面21a形成複數條溝23、23A、23B之透明基板加工步驟之後,實施一體化步驟,該一體化步驟是將透明基板21貼附在晶圓11的背面11b以形成一體化晶圓25。After implementing the transparent substrate processing step of forming a plurality of grooves 23, 23A, 23B on the front surface 21a of the transparent substrate 21, an integration step is performed. The integration step is to attach the transparent substrate 21 to the back surface 11b of the wafer 11 to form Integrated wafer 25.
在此一體化步驟中,是如圖3之(A)所示,藉由透明接著劑將晶圓11的背面11b接著於已在正面21a形成有朝第1方向伸長的複數條溝23之透明基板21的正面,以如圖3之(B)所示,將晶圓11和透明基板21一體化而形成一體化晶圓25。In this integration step, as shown in FIG. 3 (A), the back surface 11b of the wafer 11 is adhered to the back surface 11b of the wafer 11 with a plurality of grooves 23 extending in the first direction on the front surface 21a. As shown in FIG. 3 (B), the front surface of the substrate 21 is integrated with the transparent substrate 21 to form an integrated wafer 25.
作為替代實施形態,亦可作成藉由透明接著劑將晶圓11的背面11b接著於在透明基板21的正面21a具有朝第1方向及朝與此第1方向正交的第2方向伸長的複數條溝23的透明基板21的正面21a,來將晶圓11和透明基板21一體化。在此,已形成在透明基板21的正面21a的溝23的間距是對應於晶圓11的分割預定線17的間距。As an alternative embodiment, the back surface 11b of the wafer 11 may be adhered to the front surface 21a of the transparent substrate 21 with a transparent adhesive, and may have a plurality of extensions in the first direction and in the second direction orthogonal to the first direction. The front surface 21 a of the transparent substrate 21 of the grooves 23 integrates the wafer 11 and the transparent substrate 21. Here, the pitch of the grooves 23 already formed on the front surface 21 a of the transparent substrate 21 is the pitch corresponding to the planned division line 17 of the wafer 11.
實施一體化步驟後,實施支撐步驟,該支撐步驟是如圖5所示,將一體化晶圓25的透明基板21貼附到外周部已貼附於環狀框架F上之切割膠帶T來形成框架單元,以透過切割膠帶T以環狀框架F支撐一體化晶圓25。After the integration step is performed, a support step is performed. The support step is formed by attaching the transparent substrate 21 of the integrated wafer 25 to the dicing tape T whose outer periphery has been attached to the ring frame F as shown in FIG. 5. The frame unit supports the integrated wafer 25 with the ring-shaped frame F through the dicing tape T.
實施支撐步驟之後,實施分割步驟,該分割步驟是將框架單元投入切削裝置,並且利用切削裝置來將一體化晶圓25切削以分割成一個個的發光二極體晶片。參照圖6來說明此分割步驟。After the supporting step is performed, a dividing step is performed, in which the frame unit is put into a cutting device, and the integrated wafer 25 is cut by the cutting device to be divided into individual light emitting diode wafers. This division step will be described with reference to FIG. 6.
在分割步驟中,是隔著框架單元的切割膠帶T而在切削裝置的工作夾台20上吸引保持一體化晶圓25,而環狀框架F是以圖未示的夾具夾持來固定。In the dividing step, the integrated wafer 25 is attracted and held on the work clamp table 20 of the cutting device via the dicing tape T of the frame unit, and the ring frame F is clamped and fixed by a clamp (not shown).
然後,一邊使切削刀14朝箭頭R方向高速旋轉一邊切入晶圓11的分割預定線17直到切削刀14的前端到達切割膠帶T為止,並且從冷卻噴嘴18朝向切削刀14及晶圓11的加工點供給著切削液來將一體化晶圓25朝箭頭X1方向加工進給,藉此形成沿著晶圓11的分割預定線17切斷晶圓11及透明基板21的切斷溝27。Then, while cutting the cutter 14 at a high speed in the direction of the arrow R, it cuts into the planned division line 17 of the wafer 11 until the tip of the cutter 14 reaches the dicing tape T, and processes from the cooling nozzle 18 toward the cutter 14 and the wafer 11 Cutting fluid is supplied at a point to process and feed the integrated wafer 25 in the direction of the arrow X1, thereby forming a cutting groove 27 that cuts the wafer 11 and the transparent substrate 21 along the planned division line 17 of the wafer 11.
將切削單元10在Y軸方向上分度進給,並且沿著朝第1方向伸長的分割預定線17逐次地形成同樣的切斷溝27。其次,將工作夾台20旋轉90°之後,沿著於與第1方向正交的第2方向上伸長之全部的分割預定線17形成同樣的切斷溝27,以形成圖7所示之狀態,藉此將一體化晶圓25分割成如圖8所示的發光二極體晶片31。The cutting unit 10 is fed in increments in the Y-axis direction, and the same cutting groove 27 is successively formed along a predetermined division line 17 extending in the first direction. Next, after the work clamp 20 is rotated by 90 °, the same cut grooves 27 are formed along all the planned division lines 17 that are extended in the second direction orthogonal to the first direction to form the state shown in FIG. 7. Thus, the integrated wafer 25 is divided into the light-emitting diode wafer 31 as shown in FIG. 8.
在上述之實施形態中,雖然是將切削裝置使用在將一體化晶圓25分割成一個個的發光二極體晶片31上,但是也可以作成:將對晶圓11及透明基板21具有穿透性之波長的雷射光束沿著分割預定線13朝晶圓11照射,並且在晶圓11及透明基板21的內部於厚度方向上形成複數層的改質層,接著,對一體化晶圓25賦與外力,來以改質層為分割起點將一體化晶圓25分割成一個個的發光二極體晶片31。In the above-mentioned embodiment, the cutting device is used for the light-emitting diode wafer 31 that divides the integrated wafer 25 into individual wafers. However, it is also possible to make the wafer 11 and the transparent substrate 21 transparent. Laser beams of a characteristic wavelength are irradiated toward the wafer 11 along the planned division line 13, and a plurality of modified layers are formed in the thickness direction inside the wafer 11 and the transparent substrate 21, and then the integrated wafer 25 is formed. An external force is applied to divide the integrated wafer 25 into individual light-emitting diode wafers 31 with the reforming layer as a starting point for division.
圖8所示的發光二極體晶片31是在正面具有LED電路19之LED13A的背面貼附有透明構件21A,且該透明構件21A形成有複數個貫通孔。此外,在透明構件21A的正面形成有溝23。In the light-emitting diode wafer 31 shown in FIG. 8, a transparent member 21A is attached to the rear surface of the LED 13A having the LED circuit 19 on the front surface, and the transparent member 21A is formed with a plurality of through holes. A groove 23 is formed on the front surface of the transparent member 21A.
因此,在圖8所示之發光二極體晶片31上,由於在透明構件形成有複數個貫通孔並且在其正面形成有溝23,所以會使透明構件21A的表面積增大。因此,可在透明構件內使光複雜地折射,以使被封閉在透明構件內之光減少,而使從透明構件21A射出之光的量增大,並使發光二極體晶片31的亮度提升。Therefore, in the light-emitting diode wafer 31 shown in FIG. 8, since a plurality of through holes are formed in the transparent member and grooves 23 are formed on the front surface thereof, the surface area of the transparent member 21A is increased. Therefore, light can be refracted complicatedly in the transparent member, so that the light enclosed in the transparent member can be reduced, the amount of light emitted from the transparent member 21A can be increased, and the brightness of the light-emitting diode wafer 31 can be improved. .
10‧‧‧切削單元10‧‧‧ cutting unit
11‧‧‧光元件晶圓(晶圓)11‧‧‧Optical element wafer (wafer)
11a、21a‧‧‧正面11a, 21a‧‧‧ Front
11b‧‧‧背面11b‧‧‧Back
12‧‧‧主軸殼體12‧‧‧ Spindle housing
13‧‧‧藍寶石基板13‧‧‧Sapphire substrate
13A‧‧‧LED13A‧‧‧LED
14‧‧‧切削刀14‧‧‧ Cutter
15‧‧‧積層體層15‧‧‧ Stratified body
16‧‧‧刀片罩16‧‧‧Blade cover
17‧‧‧分割預定線17‧‧‧ divided scheduled line
18‧‧‧冷卻噴嘴18‧‧‧ cooling nozzle
19‧‧‧LED電路19‧‧‧LED circuit
20‧‧‧工作夾台20‧‧‧Work clamp table
21‧‧‧透明基板21‧‧‧ transparent substrate
21A‧‧‧透明構件21A‧‧‧Transparent member
23、23A、23B‧‧‧溝23, 23A, 23B‧‧‧ trench
25‧‧‧一體化晶圓25‧‧‧Integrated wafer
27‧‧‧切斷溝27‧‧‧ cut off the trench
29‧‧‧貫通孔29‧‧‧through hole
31‧‧‧發光二極體晶片31‧‧‧light-emitting diode chip
R、X1‧‧‧箭頭R, X1‧‧‧ arrows
T‧‧‧切割膠帶T‧‧‧Cutting Tape
F‧‧‧環狀框架F‧‧‧ ring frame
X、Y、Z‧‧‧方向X, Y, Z‧‧‧ directions
圖1是光元件晶圓的正面側立體圖。 圖2(A)是顯示透明基板加工步驟的立體圖,圖2(B)~圖2(D)是顯示所形成之溝形狀的截面圖。 圖3(A)是顯示將於正面具有複數條朝第1方向伸長之溝的透明基板貼附在晶圓之背面而進行一體化之一體化步驟的立體圖,圖3(B)是一體化晶圓的立體圖。 圖4是顯示將於正面具有朝第1方向及朝與第1方向正交的第2方向伸長之複數條溝的透明基板對晶圓之背面進行貼附來進行一體化之一體化步驟的立體圖。 圖5是顯示透過切割膠帶而以環狀框架支撐一體化晶圓的支撐步驟的立體圖。 圖6是顯示將一體化晶圓分割成發光二極體晶片的分割步驟的立體圖。 圖7是分割步驟結束後之一體化晶圓的立體圖。 圖8是本發明實施形態之發光二極體晶片的立體圖。FIG. 1 is a front perspective view of an optical element wafer. FIG. 2 (A) is a perspective view showing the processing steps of a transparent substrate, and FIGS. 2 (B) to 2 (D) are cross-sectional views showing the shape of a groove formed. FIG. 3 (A) is a perspective view showing an integration step of attaching a transparent substrate having a plurality of grooves extending in the first direction on the front surface to the back of the wafer for integration, and FIG. 3 (B) is an integrated crystal Round perspective view. FIG. 4 is a perspective view showing an integration step of integrating a transparent substrate with a plurality of grooves extending in a first direction and a second direction orthogonal to the first direction on the front surface by attaching the back surface of the wafer for integration. . FIG. 5 is a perspective view showing a supporting step of supporting an integrated wafer with a ring frame through a dicing tape. FIG. 6 is a perspective view showing a step of dividing an integrated wafer into light emitting diode wafers. FIG. 7 is a perspective view of the integrated wafer after the dividing step. FIG. 8 is a perspective view of a light emitting diode wafer according to an embodiment of the present invention.
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