CN107768486A - The manufacture method and light-emitting diode chip for backlight unit of light-emitting diode chip for backlight unit - Google Patents
The manufacture method and light-emitting diode chip for backlight unit of light-emitting diode chip for backlight unit Download PDFInfo
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- CN107768486A CN107768486A CN201710655605.8A CN201710655605A CN107768486A CN 107768486 A CN107768486 A CN 107768486A CN 201710655605 A CN201710655605 A CN 201710655605A CN 107768486 A CN107768486 A CN 107768486A
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- emitting diode
- backlight unit
- transparency carrier
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- 238000000034 method Methods 0.000 title claims abstract description 42
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 230000011218 segmentation Effects 0.000 claims abstract description 26
- 239000004065 semiconductor Substances 0.000 claims abstract description 8
- 239000013078 crystal Substances 0.000 claims abstract description 6
- 229910052594 sapphire Inorganic materials 0.000 claims description 11
- 239000010980 sapphire Substances 0.000 claims description 11
- 239000000126 substance Substances 0.000 claims description 5
- 239000011347 resin Substances 0.000 claims description 4
- 229920005989 resin Polymers 0.000 claims description 4
- 239000011222 crystalline ceramic Substances 0.000 claims description 3
- 229910002106 crystalline ceramic Inorganic materials 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 239000005304 optical glass Substances 0.000 claims description 3
- 239000000853 adhesive Substances 0.000 claims description 2
- 230000001070 adhesive effect Effects 0.000 claims description 2
- 239000000758 substrate Substances 0.000 description 19
- 230000003287 optical effect Effects 0.000 description 8
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000002679 ablation Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000004425 Makrolon Substances 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 239000002173 cutting fluid Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000005323 electroforming Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Dicing (AREA)
Abstract
The manufacture method and light-emitting diode chip for backlight unit of light-emitting diode chip for backlight unit are provided, obtain sufficient brightness.This method has following process：Chip preparatory process, prepare following chip：The chip has laminate layers on crystal growth transparency carrier, it is respectively formed with LED circuit in each region divided on the front of laminate layers by a plurality of segmentation preset lines that cross one another, the laminate layers are formed with including multiple semiconductor layers including luminescent layer；Chip back surface manufacturing procedure, multiple recesses or groove are correspondingly formed with each LED circuit on the backside of the wafer；Transparency carrier preparatory process, prepare the transparency carrier formed with multiple through holes in the region of entire surface；Integrated process, after chip back surface manufacturing procedure is implemented, the back side of chip is pasted onto on the front of transparency carrier and forms integrated chip；And segmentation process, chip is cut off together with transparency carrier along segmentation preset lines and integrated chip is divided into each light-emitting diode chip for backlight unit.
Description
Technical field
The present invention relates to the manufacture method of light-emitting diode chip for backlight unit and light-emitting diode chip for backlight unit.
Background technology
, should formed with laminate layers on the front of the crystal growth substrate such as sapphire substrate, GaN substrate, SiC substrate
Laminate layers, will be on the laminate layers by the way that n-type semiconductor layer, luminescent layer and p-type semiconductor layer laminated multi-layer are formed
Formed with multiple LED (Light Emitting Diode in the region marked off by a plurality of segmentation preset lines intersected：Luminous two
Pole pipe) etc. luminescent device chip along segmentation preset lines cut-out and be divided into each light-emitting device chip, split obtained hair
Optical device chip is widely used in the various electronic equipments such as mobile phone, personal computer, lighting apparatus.
Due to there is isotropism from the light of the luminescent layer of light-emitting device chip injection, thus light can also be irradiated to crystal into
The inside of length substrate and also projected from the back side of substrate and side.However, in the light of inside of substrate is irradiated to, due to base
The incidence angle of the interface of plate and air layer occurs total reflection on interface for light more than critical angle and is held in inside substrate,
Outside will not be injected to from substrate, so the problem of in the presence of the luminance-reduction for causing light-emitting device chip.
In order to solve the problem, following light emitting diode has been recorded in Japanese Unexamined Patent Publication 2014-175354 publications
(LED)：In order to suppress to be held in the inside of substrate from the light that luminescent layer projects, by transparent component paste on the back of the substrate and
Realize the raising of brightness.
Patent document 1：Japanese Unexamined Patent Publication 2014-175354 publications
However, in the light emitting diode disclosed in patent document 1, there are the following problems：Although by by transparent component
It is pasted onto the back side of substrate and slightly increases brightness, but sufficient brightness can not be obtained.
The content of the invention
The present invention be in view of such point and complete, its object is to, there is provided the luminous of sufficient brightness can be obtained
The manufacture method and light-emitting diode chip for backlight unit of diode chip for backlight unit.
According to the invention described in technical scheme 1, there is provided the manufacture method of light-emitting diode chip for backlight unit, it is characterised in that have
Following process：Chip preparatory process, prepare following chip：The chip has layered product on crystal growth transparency carrier
Layer, by being respectively formed with LED in each region of a plurality of segmentation preset lines division to cross one another on the front of the laminate layers
Circuit, wherein, the laminate layers are formed with including multiple semiconductor layers including luminescent layer；Chip back surface manufacturing procedure,
Multiple recesses or groove are correspondingly formed on the back side of the chip with each LED circuit；Transparency carrier preparatory process, prepares in entire surface
Region in the transparency carrier formed with multiple through holes；Integrated process, after the chip back surface manufacturing procedure is implemented,
The back side of chip is pasted onto on the front of the transparency carrier and forms integrated chip；And segmentation process, along the segmentation
The chip is cut off and the integrated chip is divided into each light-emitting diode chip for backlight unit by preset lines together with the transparency carrier.
It is preferred that the recess or groove that are formed in chip back surface manufacturing procedure by cutting tool, etch, sandblast and laser
In any-mode formed.
It is preferred that the transparency carrier is formed by any materials in crystalline ceramics, optical glass, sapphire and transparent resin,
The transparency carrier is bonded on chip by transparent adhesive in the integrated process.
According to the invention described in technical scheme 4, there is provided light-emitting diode chip for backlight unit, wherein, the light-emitting diode chip for backlight unit has：
Light emitting diode, it is on front formed with LED circuit and on the back side formed with recess or groove；And transparent component, its
It is pasted onto on the back side of the light emitting diode, formed with multiple through holes on the transparent component.
On the present invention light-emitting diode chip for backlight unit, due on transparent component formed with multiple through holes, so transparent
The surface area increase of part, and the light that light intricately reflects in transparent component and to close in transparent component is reduced, from
The amount for the light that transparent component projects increases and improves the brightness of light-emitting diode chip for backlight unit.
Brief description of the drawings
Fig. 1 is the face side stereogram of optical device wafer.
Fig. 2 (A) is the stereogram for the back side manufacturing procedure for showing the chip that cutting tool is carried out, Fig. 2 (B)~figure
2 (D) is the sectional view for showing formed groove shape.
Fig. 3 (A) is edge-on at the back side of the chip of multiple grooves along the elongation of the 1st direction at the back side of chip with being formed
Body figure, Fig. 3 (B) are to be extended formed with formation at the back side of chip along the 1st direction and 2nd direction vertical with the 1st direction
Multiple grooves chip rear side stereogram.
Fig. 4 (A) is the stereogram for showing the situation by mask stickup on the backside of the wafer, and Fig. 4 (B) is in chip
The back side on pasted with multiple holes mask state stereogram, Fig. 4 (C)~Fig. 4 (E) is to show to be formed in crystalline substance
The local stereogram of the chip of the shape of the recess at the back side of piece.
Fig. 5 (A) is the stereogram for showing to be formed the situation of groove on the backside of the wafer by laser beam, and Fig. 5 (B) is
The partial sectional view of the chip of groove shape is shown, Fig. 5 (C) be show to be formed on the backside of the wafer by laser beam it is circular recessed
The stereogram of the situation in portion, Fig. 5 (D) are the partial perspective views for the chip for showing the circular recess to be formed.
Fig. 6 (A) is to show the front of the transparency carrier in the region of entire surface with multiple through holes being pasted onto
The stereogram of the integrated process of integration is carried out on the back side of chip, Fig. 6 (B) is the stereogram of integrated chip.
Fig. 7 is the solid of supporting process for showing to support integrated chip using ring-shaped frame by dicing tape
Figure.
Fig. 8 is the stereogram for showing integrated chip being divided into the segmentation process of light-emitting diode chip for backlight unit.
Fig. 9 is the stereogram of the integrated chip after segmentation process terminates.
Figure 10 is the stereogram of the light-emitting diode chip for backlight unit of embodiment of the present invention.
Label declaration
10：Cutting unit；11：Optical device wafer (chip)；13：Sapphire substrate；14：Cutting tool；15：Layered product
Layer；17：Split preset lines；19：LED circuit；21：Transparency carrier；21A：Transparent component；25：Integrated chip；27：Cutting groove；
29：Through hole；31：Light-emitting diode chip for backlight unit.
Embodiment
Hereinafter, embodiments of the present invention are described in detail referring to the drawings.Reference picture 1, show optical device crystalline substance
The face side stereogram of piece (below, sometimes referred to simply as chip) 11.
Optical device wafer 11 is configured to be laminated with gallium nitride (GaN) homepitaxy layer (laminate layers) on sapphire substrate 13
15.Optical device wafer 11, which has, is laminated with the back side 11b that the positive 11a and sapphire substrate 13 of epitaxial layer 15 are exposed.
Here, in the optical device wafer 11 of present embodiment, crystal growth base is used as using sapphire substrate 13
Plate, but sapphire substrate 13 can also be replaced and use GaN substrate or SiC substrate etc..
Laminate layers (epitaxial layer) 15 be by make electronics be majority carrier n-type semiconductor layer (for example, n-type GaN
Layer), the semiconductor layer (for example, InGaN layer) as luminescent layer, hole for majority carrier p-type semiconductor layer (for example, p-type
GaN layer) in order epitaxial growth and formed.
Sapphire substrate 13 is for example with 100 μm of thickness, and laminate layers 15 are for example with 5 μm of thickness.In layered product
Divided on layer 15 by being formed as a plurality of segmentation preset lines 17 of clathrate and formed with multiple LED circuits 19.Chip 11 has
The back side 11b that positive 11a and sapphire substrate 13 formed with LED circuit 19 are exposed.
According to the manufacture method of the light-emitting diode chip for backlight unit of embodiment of the present invention, first, implement chip preparatory process, it is accurate
Optical device wafer 11 shown in standby Fig. 1.And then implement chip back surface manufacturing procedure, it is electric with LED on the back side 11b of chip 11
Road 19 is correspondingly formed multiple grooves 3.
For example, implement the chip back surface manufacturing procedure using known topping machanism.As shown in Fig. 2 (A), cutting dress
The cutting unit 10 put includes：Main shaft shell 12；Main shaft (not shown), it is inserted in main shaft shell 12 in a manner of it can rotate
In；And cutting tool 14, it is arranged on the front end of main shaft.
The electroforming grinding tool that the cutting edge of cutting tool 14 secures diamond abrasive grain for example by nickel plating is formed, before it
End is shaped as triangle, quadrangle or semicircle.
The generally part of cutting tool 14 is covered by cutter hood (wheel cover) 16, is equipped with cutter hood 16 in bite
The inboard of tool 14 and nearby a pair of (illustrate only 1) cooling nozzles 18 of side horizontal extension.
In chip back surface manufacturing procedure, multiple grooves 3 are formed on the back side 11b of chip 11, utilize cutting (not shown)
The chuck table of device carries out attracting holding to the positive 11a of chip 11.Then, while making cutting tool 14 according to arrow R
Direction at a high speed rotation the back side 11b of chip 11 is cut on one side as defined in depth, and to being maintained at chuck table (not shown)
On chip 11 be processed feeding according to arrow X1 directions, so as to by cut formed along the 1st direction extend groove 3.
While to chip 11 according to the spacing of the segmentation preset lines 17 of chip 11 on the direction vertical with arrow X1 directions
Index feed is carried out, while being cut the back side 11b of chip 11 and sequentially forming along the 1st direction and stretch as shown in Fig. 3 (A)
Long multiple grooves 3.
Both can be that the back side 11b that chip 11 is formed at as shown in Fig. 3 (A) multiple grooves 3 only extend in one direction
Mode, or can also as shown in Fig. 3 (B), on the back side 11b of chip 11 formed along the 1st direction and with the 1st direction
Multiple grooves 3 of vertical the 2nd direction elongation.
The groove for being formed at the back side 11b of chip 11 can be the groove 3 or Fig. 2 of the section triangle shown in Fig. 2 (B)
(C) the semicircular groove 3B in section shown in the groove 3A or Fig. 2 of the section quadrangle shown in (D).
It can also replace forming multiple grooves 3,3A, 3B embodiment on the back side 11b of chip 11 by cutting,
On the back side 11b of chip 11 multiple recesses are correspondingly formed with LED circuit 19.In this embodiment, as shown in Fig. 4 (A),
Use the mask 2 with multiple holes 4 corresponding with the LED circuit 19 of chip 11.
As shown in Fig. 4 (B), make the hole 4 of mask 2 corresponding with each LED circuit 19 of chip 11 and be pasted onto chip 11
On the 11b of the back side.Then, as shown in Fig. 4 (C), formed by wet etching or plasma etching on the back side 11b of chip 11 with
The recess 5 of triangle corresponding to the shape in the hole 4 of mask 2.
Can also be by the way that the shape in the hole 4 of mask 2 be changed into quadrangle or circle and the shape on the back side 11b of chip 11
Into the recess 5A of the quadrangle shown in Fig. 4 (D), or the circle on the back side 11b of chip 11 shown in formation Fig. 4 (E)
Recess 5B.
, can also be by after mask 2 be pasted onto on the back side 11b of chip 11 as modified embodiment of the present embodiment
Implement to sandblast processing so as to the recess 5 of triangle or Fig. 4 (D) on the back side 11b of chip 11 shown in formation Fig. 4 (C)
Circular depressions 5B shown in the recess 5A or Fig. 4 of shown quadrangle (E).
Want to form multiple grooves corresponding with LED circuit 19 or multiple recesses on the back side 11b of chip 11, can also profit
Use laser processing device.In the 1st embodiment realized by Laser Processing, as shown in Fig. 5 (A), while (swashing from concentrator
Shaven head) back side 11b irradiations of 24 pairs of chips 11 have the laser beam of absorbefacient wavelength (for example, 266nm) for chip 11, and one
While feeding is processed according to arrow X1 directions to the chuck table (not shown) that remain chip 11, so as to exist by ablation
The groove 7 extended along the 1st direction is formed on the back side 11b of chip 11.
While to chip 11 according to the spacing of the segmentation preset lines 17 of chip 11 on the direction vertical with arrow X1 directions
Index feed is carried out, while carrying out ablation to the back side 11b of chip 11 and sequentially forming the multiple grooves extended along the 1st direction
7.The cross sectional shape of groove 7 for example can be the semicircle or other shape shown in Fig. 5 (B).
As instead of embodiment, can also intermittently be irradiated for chip 11 from concentrator 24 as shown in Fig. 5 (C)
Pulse laser beam with absorbefacient wavelength (for example, 266nm) and on the back side 11b of chip 11 formed with LED circuit 19
Corresponding multiple recesses 9.The circle being generally in the shape of shown in (D) corresponding with the light spot shape of laser beam, Fig. 5 of recess 9.
After chip back surface manufacturing procedure is implemented or before the process is implemented, as shown in Fig. 6 (A), implement
Transparency carrier preparatory process, prepare the transparency carrier 21 in the region of entire surface with multiple through holes 29.Transparency carrier 21
Formed by any materials in transparent resin, optical glass, sapphire and crystalline ceramics.In the present embodiment, by than optics
Glass has the transparent resins such as the makrolon of durability, propylene to form transparency carrier 21.
After chip back surface manufacturing procedure and transparency carrier preparatory process is implemented, as shown in Fig. 6 (A), implement one
Body chemical industry sequence, the positive 21a of the transparency carrier 21 in the region of entire surface with multiple through holes 29 is pasted onto chip 11
Back side 11b on and carry out integration.Fig. 6 (B) is the stereogram of integrated chip 25.
After integrated process is implemented, as shown in fig. 7, implementing supporting process, by the transparent base of integrated chip 25
Plate 21 is pasted onto peripheral part and is glued on ring-shaped frame F dicing tape T and forms frame unit, is utilized by dicing tape T
Ring-shaped frame F supports to integrated chip 25.
After supporting process is implemented, implement segmentation step, frame unit is put into topping machanism, utilizes cutting
Device is cut integrated chip 25 and is divided into each light-emitting diode chip for backlight unit.Reference picture 8 is carried out to the segmentation process
Explanation.
Such as implement the segmentation process using known topping machanism.As shown in figure 8, in segmentation process, using cutting
The chuck table 20 of turning device carries out attracting holding, ring-shaped frame F across the dicing tape T of frame unit to integrated chip 25
Clamped and fixed by fixture (not shown).
Then, cutting tool 14 is made to be rotated according to arrow R directions while cutting the front end of cutting tool 14 at a high speed
The segmentation preset lines 17 of chip 11 are until reaching dicing tape T, and while from cooling nozzles 18 towards cutting tool 14 and chip
11 processing stand provides cutting fluid, while feeding is processed on arrow X1 directions to integrated chip 25, thus, along crystalline substance
The segmentation preset lines 17 of piece 11 form the cutting groove 27 for cutting off chip 11 and transparency carrier 21.
While carry out index feed in the Y-axis direction to cutting unit 10, while along the segmentation extended on the 1st direction
Preset lines 17 sequentially form same cutting groove 27.Then, after chuck table 20 is rotated by 90 °, along with the 1st side
The whole segmentation preset lines 17 extended on to the 2nd vertical direction form same cutting groove 27 and turn into the shape shown in Fig. 9
State, so as to which integrated chip 25 to be divided into the light-emitting diode chip for backlight unit 31 shown in Figure 10.
In the above-described embodiment, although integrated chip 25 is divided into each light emitting diode using topping machanism
Chip 31, but chip 11 can also be irradiated along segmentation preset lines 13 there is permeability for chip 11 and transparency carrier 21
The laser beam of wavelength and the inside through-thickness in chip 11 and transparency carrier 21 forms the modification layer of multilayer, then to one
Change chip 25 to apply external force and integrated chip 25 is divided into each light-emitting diode chip for backlight unit 31 as segmentation starting point to modify layer.
In the light-emitting diode chip for backlight unit 31 shown in Figure 10, LED 13A have LED circuit 19 on front, in the LED
Formed with recess or groove on the 13A back side, so that surface area increases, and transparent component 21A is pasted with the back side.And
And formed with multiple through holes 29 on transparent component 21A.
Therefore, in the light-emitting diode chip for backlight unit 31 shown in Figure 10, transparent component 21A surface area increase, and also light exists
The light for intricately reflecting in transparent component 21A and making pass in transparent component 21A is reduced, the light projected from transparent component 21A
Amount increase, the brightness of light-emitting diode chip for backlight unit 31 improve.
Claims (4)
- A kind of 1. manufacture method of light-emitting diode chip for backlight unit, it is characterised in thatThe manufacture method of the light-emitting diode chip for backlight unit has following process：Chip preparatory process, prepare following chip：The chip has laminate layers on crystal growth transparency carrier, at this LED circuit is respectively formed with each region divided on the front of laminate layers by a plurality of segmentation preset lines to cross one another, its In, the laminate layers are formed with including multiple semiconductor layers including luminescent layer；Chip back surface manufacturing procedure, multiple recesses or groove are correspondingly formed with each LED circuit on the back side of the chip；Transparency carrier preparatory process, prepare the transparency carrier formed with multiple through holes in the region of entire surface；Integrated process, after the chip back surface manufacturing procedure is implemented, the back side of chip is pasted onto the transparency carrier Integrated chip is formed on front；AndSegmentation process, the chip is cut off together with the transparency carrier along the segmentation preset lines and splits the integrated chip Into each light-emitting diode chip for backlight unit.
- 2. the manufacture method of light-emitting diode chip for backlight unit according to claim 1, wherein,In the chip back surface manufacturing procedure, by cutting tool, etch, sandblast and laser in any-mode to be formed State recess or the groove.
- 3. the manufacture method of light-emitting diode chip for backlight unit according to claim 1, wherein,The transparency carrier is formed by any materials in crystalline ceramics, optical glass, sapphire and transparent resin, in the one The transparency carrier is pasted on this wafer using transparent adhesive in chemical industry sequence.
- 4. a kind of light-emitting diode chip for backlight unit, wherein,The light-emitting diode chip for backlight unit has：Light emitting diode, it is on front formed with LED circuit and on the back side formed with recess or groove；AndTransparent component, it is pasted onto on the back side of the light emitting diode,Formed with multiple through holes on the transparent component.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016159974A JP2018029110A (en) | 2016-08-17 | 2016-08-17 | Light-emitting diode chip manufacturing method and light-emitting diode chip |
| JP2016-159974 | 2016-08-17 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107768486A true CN107768486A (en) | 2018-03-06 |
| CN107768486B CN107768486B (en) | 2021-12-21 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710655605.8A Active CN107768486B (en) | 2016-08-17 | 2017-08-03 | Method for producing light-emitting diode chip and light-emitting diode chip |
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| Country | Link |
|---|---|
| JP (1) | JP2018029110A (en) |
| KR (1) | KR102194112B1 (en) |
| CN (1) | CN107768486B (en) |
| TW (1) | TWI727069B (en) |
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| US20230117073A1 (en) | 2020-02-25 | 2023-04-20 | Mitsubishi Electric Corporation | State-monitoring device and maintenance work assistance method |
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- 2017-07-06 TW TW106122717A patent/TWI727069B/en active
- 2017-08-03 CN CN201710655605.8A patent/CN107768486B/en active Active
- 2017-08-08 KR KR1020170100350A patent/KR102194112B1/en active IP Right Grant
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| CN103053037A (en) * | 2010-08-06 | 2013-04-17 | 株式会社小糸制作所 | Fluorescent member and light-emitting module |
| JP2012195404A (en) * | 2011-03-16 | 2012-10-11 | Toshiba Lighting & Technology Corp | Light-emitting device and luminaire |
| US20140231845A1 (en) * | 2013-02-18 | 2014-08-21 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device and method for manufacturing the same |
| CN104078425A (en) * | 2013-03-27 | 2014-10-01 | 株式会社迪思科 | Wafer processing method |
| JP2016076685A (en) * | 2014-10-08 | 2016-05-12 | 株式会社東芝 | Semiconductor light-emitting device and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201807841A (en) | 2018-03-01 |
| KR20180020095A (en) | 2018-02-27 |
| CN107768486B (en) | 2021-12-21 |
| JP2018029110A (en) | 2018-02-22 |
| TWI727069B (en) | 2021-05-11 |
| KR102194112B1 (en) | 2020-12-22 |
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