CN108538993A - The manufacturing method and light-emitting diode chip for backlight unit of light-emitting diode chip for backlight unit - Google Patents
The manufacturing method and light-emitting diode chip for backlight unit of light-emitting diode chip for backlight unit Download PDFInfo
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- CN108538993A CN108538993A CN201810166025.7A CN201810166025A CN108538993A CN 108538993 A CN108538993 A CN 108538993A CN 201810166025 A CN201810166025 A CN 201810166025A CN 108538993 A CN108538993 A CN 108538993A
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- transparent substrate
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- emitting diode
- backlight unit
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
Abstract
The manufacturing method and light-emitting diode chip for backlight unit of light-emitting diode chip for backlight unit are provided.This method has：Chip preparatory process prepares such as lower wafer：The chip has laminate layers on crystal growth transparent substrate, be respectively formed with LED circuit in each region divided by a plurality of segmentation preset lines that cross one another on the front of laminate layers, laminate layers be formed with comprising luminescent layer including multiple semiconductor layers；Transparent substrate manufacturing procedure, front or the back side and each LED circuit of at least any one party of the 1st or the 2nd transparent substrate to being formed with multiple through holes in the region of entire surface accordingly form multiple pits；The front of 1st transparent substrate is pasted on the backside of the wafer, the front of the 2nd transparent substrate is pasted onto on the back side of the 1st transparent substrate and forms integrated chip by transparent substrate adhering processes；And segmentation process, chip is cut off together with the 1st, the 2nd transparent substrate along segmentation preset lines and integrated chip is divided into each light-emitting diode chip for backlight unit.
Description
Technical field
The present invention relates to the manufacturing method of light-emitting diode chip for backlight unit and light-emitting diode chip for backlight unit.
Background technology
Laminate layers are formed on the front of the crystal growths such as sapphire substrate, GaN substrate, SiC substrate substrate, it should
Laminate layers are formed by by n-type semiconductor layer, luminescent layer and p-type semiconductor layer laminated multi-layer, will be on the laminate layers
It is formed with multiple LED (Light Emitting Diode in the region divided by a plurality of segmentation preset lines intersected：Light-emitting diodes
Pipe) etc. luminescent devices chip along segmentation preset lines cut-out and be divided into each light-emitting device chip, divide shine
Device chip is widely used in the various electronic equipments such as mobile phone, personal computer, lighting apparatus.
Since the light that is projected from the luminescent layer of light-emitting device chip has isotropism, thus light can also be irradiated to crystal at
The inside of length substrate and also projected from the back side of substrate and side.However, in the light for the inside for being irradiated to substrate, due to base
The incidence angle of the interface of plate and air layer occurs total reflection on interface for light more than critical angle and is held in inside substrate,
Outside will not be injected to from substrate, so there are problems that causing the brightness of light-emitting device chip to reduce.
In order to solve this problem, following light emitting diode (LED) is described in patent document 1：In order to inhibit from hair
The light that photosphere projects is held in the inside of substrate, and transparent component is pasted on the back of the substrate and realizes the raising of brightness.
Patent document 1：Japanese Unexamined Patent Publication 2014-175354 bulletins
However, in light emitting diode disclosed in patent document 1, there are the following problems：Although by by transparent component
It is pasted onto the back side of substrate and slightly increases brightness, but be unable to get sufficient brightness.
Invention content
The present invention is completed in view of such point, it is intended that shining for sufficient brightness can be obtained by providing
The manufacturing method and light-emitting diode chip for backlight unit of diode chip for backlight unit.
Invention according to technical solution 1 provides the manufacturing method of light-emitting diode chip for backlight unit, which is characterized in that have
Following process：Chip preparatory process prepares following chip：The chip has laminated body on crystal growth transparent substrate
Layer, it is respectively formed in each region divided by a plurality of segmentation preset lines to cross one another on the front of the laminate layers
LED circuit, wherein the laminate layers be formed with comprising luminescent layer including multiple semiconductor layers；Transparent substrate manufacturing procedure,
To being formed with the 1st transparent substrate of multiple through holes in the region of entire surface or being formed in the region of entire surface multiple pass through
The front or the back side of at least any one party of 2nd transparent substrate of through-hole accordingly form multiple pits with each LED circuit；Thoroughly
The front of 1st transparent substrate is pasted onto chip by bright substrate sticking process after implementing the transparent substrate manufacturing procedure
The back side on, and the front of the 2nd transparent substrate is pasted onto on the back side of the 1st transparent substrate, to form integration
Chip；And segmentation process by the chip and is somebody's turn to do after implementing the transparent substrate adhering processes along the segmentation preset lines
1st transparent substrate and the 2nd transparent substrate cut off and the integration chip are divided into each light-emitting diode chip for backlight unit together.
It is preferred that the cross sectional shape of the pit formed in transparent substrate manufacturing procedure is triangle, quadrangle or circle.It is excellent
Be selected in the pit that is formed in transparent substrate manufacturing procedure by etch, sandblast and laser in any way formed.
It is preferred that the 1st transparent substrate and the 2nd transparent substrate are by crystalline ceramics, optical glass, sapphire and transparent tree
Any materials in fat are formed, and the 1st transparent substrate is pasted onto crystalline substance using transparent adhesive in the transparent substrate adhering processes
2nd transparent substrate is bonded on the 1st transparent substrate by piece using transparent adhesive.
According to the invention described in technical solution 5, light-emitting diode chip for backlight unit is provided, wherein the light-emitting diode chip for backlight unit has：
Light emitting diode is formed with LED circuit on front；The 1st transparent component with multiple through holes is pasted onto this and shines
On the back side of diode；And the 2nd transparent component with multiple through holes, it is pasted onto on the back side of the 1st transparent component,
It is formed with pit on the front or the back side of at least any one party of the 1st transparent component or the 2nd transparent component.
About the present invention light-emitting diode chip for backlight unit, due to multiple through holes the 1st transparent component or with more
Be formed with pit on the front or the back side of at least any one party of 2nd transparent component of a through hole, thus the 1st transparent component or
The surface area of 2nd transparent component increases, and light is intricately reflected by least two layers of transparent component and pit, Guan
1, the light in the 2nd transparent component is reduced, and the amount of the light projected from the 1st, the 2nd transparent component increases, to make light-emitting diodes tube core
The brightness of piece improves.
Description of the drawings
Fig. 1 is the face side stereogram of optical device wafer.
(A) of Fig. 2 is to show that the will be pasted onto with the mask in multiple holes corresponding with each LED circuit of optical device wafer
(B) of the stereogram of situation on the front of 1 transparent substrate, Fig. 2 is the shape that mask has been pasted on the front of the 1st transparent substrate
The stereogram of state, (E) of (C)~Fig. 2 of Fig. 2 are the offices for the shape for showing the pit being formed on the front of the 1st transparent substrate
Portion's stereogram.
(A) of Fig. 3 is to show by the irradiation of laser beam to be formed on the front of the 1st transparent substrate and optical device wafer
The corresponding multiple pits of each LED circuit situation stereogram, (B) of Fig. 3 is the partial perspective view for the shape for showing pit.
(A) of Fig. 4 is to show on the backside of the wafer to carry out the 1st transparent substrate stickup that front has multiple pits
The stereogram of integrated 1st integrated process, (B) of Fig. 4 are the stereograms of the 1st integrated chip.
(A) of Fig. 5 is to show that the front by the 2nd transparent substrate is pasted onto the back of the body of the 1st transparent substrate of the 1st integrated chip
The stereogram of the integrated 2nd integrated process is carried out on face, (B) of Fig. 5 is the stereogram of the 2nd integrated chip.
Fig. 6 is the bearing process for showing to be supported using the integrated chip of ring-shaped frame pair the 2nd by dicing tape
Stereogram.
Fig. 7 is the stereogram for showing the 2nd integrated chip being divided into the segmentation process of light-emitting diode chip for backlight unit.
Fig. 8 is the stereogram of the 2nd integrated chip after segmentation process.
Fig. 9 is the stereogram of the light-emitting diode chip for backlight unit of embodiment of the present invention.
Label declaration
2：Mask；5、5A、5B、9：Pit；10：Cutting unit；11：Optical device wafer (chip)；13：Sapphire substrate；
14：Cutting tool；15：Laminate layers；17：Divide preset lines；19：LED circuit；21：1st transparent substrate；21′：1st hyalomere
Part；21A：2nd transparent substrate；21A′：2nd transparent component；25：1st integrated chip；25A：2nd integrated chip；27：It cuts
Fault trough；29、29A：Through hole；31：Light-emitting diode chip for backlight unit.
Specific implementation mode
Hereinafter, embodiments of the present invention are described in detail with reference to attached drawing.Referring to Fig.1, optical device crystalline substance is shown
The face side stereogram of piece (hereinafter, sometimes referred to simply as chip) 11.
Optical device wafer 11 is in 13 upper layer Azide gallium (GaN) homepitaxy layer (laminate layers) 15 of sapphire substrate and structure
At.Optical device wafer 11 has the back side 11b that the positive 11a for being laminated with epitaxial layer 15 and sapphire substrate 13 are exposed.
Here, in the optical device wafer of present embodiment 11, crystal growth base is used as using sapphire substrate 13
Plate, but GaN substrate or SiC substrate can also be used instead of sapphire substrate 13 etc..
Laminate layers (epitaxial layer) 15 be by make electronics be majority carrier n-type semiconductor layer (for example, N-shaped GaN
Layer), the semiconductor layer (for example, InGaN layer) as luminescent layer, hole be majority carrier p-type semiconductor layer (for example, p-type
GaN layer) in order epitaxial growth and formed.
Sapphire substrate 13 is for example with 100 μm of thickness, and laminate layers 15 are for example with 5 μm of thickness.In laminated body
It is divided by a plurality of segmentation preset lines 17 for being formed as clathrate on layer 15 and is formed with multiple LED circuits 19.Chip 11 has shape
The back side 11b exposed at the positive 11a and sapphire substrate 13 that have LED circuit 19.
According to the manufacturing method of the light-emitting diode chip for backlight unit of embodiment of the present invention, first, implement chip preparatory process, it is accurate
Standby optical device wafer 11 shown in FIG. 1.Then, implement transparent substrate manufacturing procedure, the back side 11b for being pasted on chip 11,
It is formed on the front or the back side of the 1st transparent substrate 21 of multiple through holes 29, or is being pasted in the region of entire surface
It is being formed with the 2nd transparent substrate 21A of multiple through hole 29A just in the back side of 1st transparent substrate 21, region in entire surface
On face or the back side, multiple pits are accordingly formed with LED circuit 19.
In the transparent substrate manufacturing procedure, such as shown in (A) of Fig. 2, using with the LED circuit 19 with chip 11
The mask 2 in corresponding multiple holes 4.As shown in (B) of Fig. 2, keeps the hole 4 of mask 2 corresponding with each LED circuit 19 of chip 11 and incite somebody to action
Mask affixes on the positive 21a for the 1st transparent substrate 21 for being formed with multiple through holes 29 in the region of entire surface.
Then, as shown in (C) of Fig. 2, by wet etching or plasma etching on the positive 21a of the 1st transparent substrate 21
Form the pit (recess portion) 5 of triangle corresponding with the shape in hole 4 of mask 2.
It can also be by the shape in the hole 4 of mask 2 be changed to quadrangle or circle in the front of the 1st transparent substrate 21
The pit 5A of quadrangle shown in (D) of Fig. 2 is formed on 21a, or forms Fig. 2's on the positive 21a of the 1st transparent substrate 21
(E) circular pit 5B shown in.
1st transparent substrate 21 is formed by any materials in transparent resin, optical glass, sapphire and crystalline ceramics.
In the present embodiment, by forming the 1st transparent base than transparent resins such as makrolon of the optical glass with durability, propylene
Plate 21.
It, can also be by the front that mask 2 is pasted onto to the 1st transparent substrate 21 as modified embodiment of the present embodiment
Implement to sandblast processing and form the recessed of triangle shown in (C) of Fig. 2 on the positive 21a of the 1st transparent substrate 21 after 21a is upper
Cheat circular pit 5B shown in (E) of the pit 5A or Fig. 2 of quadrangle shown in (D) of 5 or Fig. 2.
It, can also profit to form multiple pits corresponding with LED circuit 19 on the positive 21a of the 1st transparent substrate 21
Use laser processing device.In the embodiment realized by laser processing, as shown in (A) of Fig. 3, on one side from concentrator (laser
Head) 24 pair of the 1st transparent substrate 21 positive 21a intermittently irradiate for the 1st transparent substrate 21 have absorbent wavelength (such as
For 266nm) laser beam, on one side to remain the chuck table (not shown) of the 1st transparent substrate 21 according to the directions arrow X1
It is processed feeding, it is right with the LED circuit 19 of chip 11 to be formed on the positive 21a of the 1st transparent substrate 21 by ablation
The multiple pits 9 answered.
On one side to the 1st transparent substrate 21 according to the spacing of the segmentation preset lines 17 of chip 11 vertical with the directions arrow X1
Index feed is carried out on direction, and ablation is carried out to the positive 21a of the 1st transparent substrate 21 on one side and sequentially forms multiple pits
9.The cross sectional shape of pit 9 is typically round shown in (B) of Fig. 3 corresponding with the light spot shape of laser beam.
In above-mentioned transparent substrate manufacturing procedure, formd on the positive 21a of the 1st transparent substrate 21 multiple pits 5,
5A, 5B, 9, but can also replace the embodiment, formed on the back side 21b of the 1st transparent substrate 21 multiple pits 5,5A, 5B,
9。
Alternatively, any processing can not also be implemented to the front and back of the 1st transparent substrate 21, in the region of entire surface
Inside it is formed with each LED circuit pair of the positive 21a or back side 21b and chip 11 of the 2nd transparent substrate 21A of multiple through hole 29A
Form multiple pits 5,5A, 5B, 9 with answering.2nd transparent substrate 21A is also with the 1st transparent substrate 21 equally by transparent resin, optics
Any materials in glass, sapphire and crystalline ceramics are formed.
After implementing transparent substrate manufacturing procedure, implement transparent substrate adhering processes, just by the 1st transparent substrate 21
Face 21a is pasted onto on the back side 11b of chip 11, and the positive 21a of the 2nd transparent substrate 21A is pasted onto the 1st transparent substrate 21
Back side 21b on.
In the transparent substrate adhering processes, first, as shown in (A) of Fig. 4, using transparent adhesive by the back of the body of chip 11
Face 11b is bonded on the positive 21a of the 1st transparent substrate 21, make chip 11 and the 1st transparent substrate 21 as shown in (B) of Fig. 4 that
Sample is integrated and forms the 1st integrated chip 25, wherein the LED on the positive 21a of the 1st transparent substrate 21 with chip 11
Circuit 19 is accordingly formed with multiple pits 9.
Then, as shown in (A) of Fig. 5, the positive 21a of the 2nd transparent substrate 21A is pasted onto the 1st integrated chip 25
The 2nd integrated chip 25A shown in (B) of Fig. 5 is formed on the back side 21b of 1st transparent substrate 21.
The transparent substrate adhering processes are not limited to above-mentioned sequence, can also be by the front of the 2nd transparent substrate 21A
After 21a is pasted onto on the back side 21b of the 1st transparent substrate 21, the positive 21a of the 1st transparent substrate 21 is pasted onto chip 11
The 2nd integrated chip 25A is formed on the 11b of the back side.
After implementing transparent substrate adhering processes, as shown in fig. 6, implementing bearing process, by the 2nd integrated chip
The 2nd transparent substrate 21A of 25A is pasted onto peripheral part and is glued on the dicing tape T of ring-shaped frame F and forms frame unit, borrows
It helps dicing tape T and is supported using F couples the 2nd integration chip 25A of ring-shaped frame.
After implementing bearing process, implements segmentation process, frame unit is put into cutting apparatus, cutting is utilized
The 2nd integration chip 25A of device pair is cut and is divided into each light-emitting diode chip for backlight unit.With reference to Fig. 7 to the segmentation process
It illustrates.
As shown in fig. 7, the cutting unit 10 of cutting apparatus includes：Main shaft shell 12；Main shaft (not shown), can revolve
The mode turned is inserted into main shaft shell 12；And cutting tool 14, it is mounted on the front end of main shaft.
The electroforming grinding tool that the cutting edge of cutting tool 14 secures diamond abrasive grain for example by nickel plating is formed, before
End shape is triangle, quadrangle or semicircle.
The generally part of cutting tool 14 is covered by cutter hood (wheel cover) 16, is equipped in bite in cutter hood 16
Horizontal-extending a pair of (the illustrating only 1) cooling nozzles 18 in the inboard of tool 14 and nearby side.
In segmentation step, the 2nd integration chip 25A is filled across the dicing tape T attracting holdings of frame unit in cutting
On the chuck table 20 set, ring-shaped frame F is clamped and fixed by fixture (not shown).
Then, the front end of cutting tool 14 is made to cut while making cutting tool 14 according to arrow R direction high speed rotations
To chip 11 segmentation preset lines 17 until reaching dicing tape T, and on one side from cooling nozzles 18 towards cutting tool 14 and crystalline substance
The processing stand of piece 11 provides cutting fluid, and feeding is processed on the directions arrow X1 to the 2nd integration chip 25A on one side, as a result, along
The segmentation preset lines 17 of chip 11 form the cutting groove 27 by chip 11 and the 1st, the 2nd transparent substrate 21,21A cut-outs.
Index feed is carried out in the Y-axis direction to cutting unit 10 on one side, on one side along the segmentation upwardly extended in the 1st side
Preset lines 17 sequentially form same cutting groove 27.Then, after so that chuck table 20 is rotated by 90 °, along with the 1st side
The whole segmentation preset lines 17 upwardly extended to the 2nd vertical side form same cutting groove 27 and become shape shown in Fig. 8
State, to which the 2nd integration chip 25A is divided into light-emitting diode chip for backlight unit 31 shown in Fig. 9.
In the above-described embodiment, although the 2nd integration chip 25A is divided into each luminous two using cutting apparatus
Pole pipe chip 31, but can also have for chip 11 and transparent substrate 21,21A to the irradiation of chip 11 along segmentation preset lines 13
The laser beam of the wavelength of permeability forms multilayer in the inside through-thickness of chip 11 and transparent substrate 21,21A and modifies layer,
Then, chip 25A integrated to the 2nd applies external force and is divided into the 2nd integration chip 25A respectively for segmentation starting point with modifying layer
A light-emitting diode chip for backlight unit 31.
In light-emitting diode chip for backlight unit 31 shown in Fig. 9, there is the LED 13A of LED circuit 19 on the back side on front
It is pasted with the 1st transparent component 21 ' with multiple through holes.Also, it is formed with pit on the front of the 1st transparent component 21 '
5,5A, 5B or pit 9.In addition, being pasted with the 2nd transparent component with multiple through holes on the back side of the 1st transparent component 21 '
21A′。
Therefore, in light-emitting diode chip for backlight unit 31 shown in Fig. 9, due to being formed on the front of the 1st transparent component 21 '
Pit, so the surface area of the 1st transparent component 21 ' increases.Also, it is projected simultaneously from the LED circuit of light-emitting diode chip for backlight unit 31 19
It is incident on that in pit portion refraction occurs for the part of the light of the 1st transparent component 21 ' and to enter the 1st transparent component 21 ' interior.
When projecting light from the 1st transparent component 21 ' and the 2nd transparent component 21A ' to outer refractive therefore, it is possible to reduce
1, the incidence angle of the interface of the 2nd transparent component 21 ', 21A ' and air layer is the ratio of the light of critical angle or more, from the 1st, the 2nd
Transparent component 21 ', 21A ' injections the amount of light increase, the brightness of light-emitting diode chip for backlight unit 31 improves.
Claims (5)
1. a kind of manufacturing method of light-emitting diode chip for backlight unit, which is characterized in that the manufacturing method of the light-emitting diode chip for backlight unit has
Following process：
Chip preparatory process prepares following chip：The chip has laminate layers on crystal growth transparent substrate, at this
It is respectively formed with LED circuit in each region divided by a plurality of segmentation preset lines to cross one another on the front of laminate layers,
Wherein, multiple semiconductor layers including the laminate layers are formed with comprising luminescent layer；
Transparent substrate manufacturing procedure, to being formed with the 1st transparent substrate of multiple through holes in the region of entire surface or entire
The front or the back side of at least any one party of the 2nd transparent substrate of multiple through holes are formed in the region in face, with each LED circuit
Accordingly form multiple pits；
Transparent substrate adhering processes paste the front of the 1st transparent substrate after implementing the transparent substrate manufacturing procedure
On the backside of the wafer, and by the front of the 2nd transparent substrate it is pasted onto on the back side of the 1st transparent substrate, to be formed
Integrated chip；And
Segmentation process, it is along the segmentation preset lines that the chip is saturating with the 1st after implementing the transparent substrate adhering processes
Bright substrate and the 2nd transparent substrate cut off and the integration chip are divided into each light-emitting diode chip for backlight unit together.
2. the manufacturing method of light-emitting diode chip for backlight unit according to claim 1, wherein
The cross sectional shape of the pit formed in the transparent substrate manufacturing procedure is in triangle, quadrangle and circle
Arbitrary shape.
3. the manufacturing method of light-emitting diode chip for backlight unit according to claim 1, wherein
In the transparent substrate manufacturing procedure, by etch, sandblast and laser in any way form the pit.
4. the manufacturing method of light-emitting diode chip for backlight unit according to claim 1, wherein
1st transparent substrate and the 2nd transparent substrate are by appointing in crystalline ceramics, optical glass, sapphire and transparent resin
Meaning material is formed, and the 1st transparent substrate is pasted onto the chip using transparent adhesive in the transparent substrate adhering processes
On the back side, the 2nd transparent substrate is pasted onto on the back side of the 1st transparent substrate using transparent adhesive.
5. a kind of light-emitting diode chip for backlight unit, wherein
The light-emitting diode chip for backlight unit has：
Light emitting diode is formed with LED circuit on front；
The 1st transparent component with multiple through holes, is pasted onto on the back side of the light emitting diode；And
The 2nd transparent component with multiple through holes, is pasted onto on the back side of the 1st transparent component,
It is formed with pit on the front or the back side of at least any one party of the 1st transparent component or the 2nd transparent component.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017-041314 | 2017-03-06 | ||
| JP2017041314A JP2018148015A (en) | 2017-03-06 | 2017-03-06 | Manufacturing method of light-emitting diode chip and light-emitting diode chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108538993A true CN108538993A (en) | 2018-09-14 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810166025.7A Pending CN108538993A (en) | 2017-03-06 | 2018-02-28 | The manufacturing method and light-emitting diode chip for backlight unit of light-emitting diode chip for backlight unit |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2018148015A (en) |
| KR (1) | KR102311574B1 (en) |
| CN (1) | CN108538993A (en) |
| TW (1) | TWI736738B (en) |
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Also Published As
| Publication number | Publication date |
|---|---|
| KR20180102009A (en) | 2018-09-14 |
| KR102311574B1 (en) | 2021-10-08 |
| TWI736738B (en) | 2021-08-21 |
| JP2018148015A (en) | 2018-09-20 |
| TW201841396A (en) | 2018-11-16 |
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