KR20150047844A - Semiconductor light emitting diode - Google Patents

Semiconductor light emitting diode Download PDF

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Publication number
KR20150047844A
KR20150047844A KR1020130127825A KR20130127825A KR20150047844A KR 20150047844 A KR20150047844 A KR 20150047844A KR 1020130127825 A KR1020130127825 A KR 1020130127825A KR 20130127825 A KR20130127825 A KR 20130127825A KR 20150047844 A KR20150047844 A KR 20150047844A
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layer
reflective layer
semiconductor
emitting diode
light emitting
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KR1020130127825A
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Korean (ko)
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전수근
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주식회사 세미콘라이트
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Priority to KR1020130127825A priority Critical patent/KR20150047844A/en
Priority to PCT/KR2014/010070 priority patent/WO2015060687A1/en
Publication of KR20150047844A publication Critical patent/KR20150047844A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H01L33/105—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector with a resonant cavity structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers

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  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

The present disclosure relates to a semiconductor light emitting diode, comprising: a first reflective layer provided on an opposite side of an active layer with respect to a first semiconductor layer, the first reflective layer reflecting light generated in the active layer; And a second reflective layer which is provided on the opposite side of the active layer with respect to the second semiconductor layer and reflects light generated in the active layer, changes a path of light generated from the active layer, (Lateral Light-Extraction Enhancer) is provided in the semiconductor light emitting diode.

Description

Technical Field [0001] The present invention relates to a semiconductor light emitting diode

The present disclosure relates generally to semiconductor light emitting diodes, and more particularly to semiconductor light emitting diodes capable of controlling the amount of light emitted upward.

Here, the semiconductor light emitting diode refers to a semiconductor optical device that generates light through recombination of electrons and holes, for example, a group III nitride semiconductor light emitting diode. The Group III nitride semiconductor is made of a compound of Al (x) Ga (y) In (1-x-y) N (0? X? 1, 0? Y? 1, 0? X + y? A GaAs-based semiconductor light-emitting diode used for red light emission, and the like.

Herein, the background art relating to the present disclosure is provided, and these are not necessarily meant to be known arts.

1 is a diagram showing an example of a semiconductor light emitting device disclosed in U.S. Patent No. 5,264,715, wherein a semiconductor light emitting device includes a first semiconductor layer 300 (for example, an n-type semiconductor layer) A second semiconductor layer 500 (e.g., a p-type semiconductor layer), and reflective layers 310 and 510 provided on the first semiconductor layer 300 and the second semiconductor layer 500, respectively, . By providing the reflective layers 310 and 510, the light directed upward or downward from the semiconductor light emitting device is emitted to the outside through the side surface of the semiconductor light emitting device. For example, the light L1 generated in the active layer 400 is emitted only through the side surface, and the light L2 is reflected by the reflective layer 510 and then emitted through the side surface. However, this semiconductor light emitting device basically shows the light emission to the side of the semiconductor light emitting device, and does not propose a semiconductor light emitting device which is actually efficient.

The semiconductor light emitting device includes a first semiconductor layer 300, an active layer 400, a second semiconductor layer 500, and a metal layer (not shown) The light L1 generated in the active layer 400 and the light L2 reflected from the reflective layer 510 interfere with each other to cause a problem that the light distribution characteristic changes too sensitively. In order to solve the problem, a method of forming a concavo-convex, stepped or rough surface on the semiconductor layer 300 or 500 is proposed. However, in the process of forming the irregularities in the semiconductor layer 300 or 500, the film quality of the semiconductor layer may be damaged.

This will be described later in the Specification for Implementation of the Invention.

SUMMARY OF THE INVENTION Herein, a general summary of the present disclosure is provided, which should not be construed as limiting the scope of the present disclosure. of its features).

According to one aspect of the present disclosure, there is provided a semiconductor light emitting diode comprising: an active layer that generates light through recombination of electrons and holes; an active layer that is provided above the active layer, A plurality of semiconductor layers provided below the first semiconductor layer and the active layer and including a second semiconductor layer having a second conductivity different from the first conductivity; A first reflective layer provided on an opposite side of the active layer with respect to the first semiconductor layer and having a first reflectivity so as to reflect light generated in the active layer; And a second reflective layer provided on the opposite side of the active layer with respect to the second semiconductor layer and reflecting the light generated in the active layer, And a second reflective layer having a second reflectance lower than the first reflectivity of the first reflective layer.

This will be described later in the Specification for Implementation of the Invention.

1 is a view showing an example of a semiconductor light emitting device disclosed in U.S. Patent No. 5,264,715,
2 is a view showing an example of a semiconductor light emitting device disclosed in U.S. Patent No. 6,563,142,
3 is a view showing an example of a semiconductor light emitting diode according to the present disclosure,
FIG. 4 is a view showing an example of the overall shape of the semiconductor light emitting diode shown in FIG. 3,
5 is a view showing another example of a semiconductor light emitting diode according to the present disclosure,
6 is a view showing another example of the semiconductor light emitting diode according to the present disclosure,
7 is a view showing a change in reflectance according to an angle in accordance with a change in the structure of a reflection layer.

The present disclosure will now be described in detail with reference to the accompanying drawings.

3 is a diagram showing an example of a semiconductor light emitting diode according to the present disclosure. The semiconductor light emitting diode includes a first semiconductor layer 30 (for example, n-type GaN), an active layer for generating light by recombination of electrons and holes (For example, InGaN / (In) GaN multiple quantum well structure) 40, a second semiconductor layer 50 (for example, p-type GaN), and a first semiconductor layer 30 and a second semiconductor layer 50 (31, 51). The conductivity of the first semiconductor layer 30 and the second semiconductor layer 50 can be changed. Each of the first and second semiconductor layers 30 and 50 can be formed of a plurality of layers. In the case of a Group III nitride semiconductor, green, blue, .

(1) As a first feature of the semiconductor light emitting diode according to the present disclosure, a semiconductor light emitting diode has a light scattering surface 1 between a plurality of semiconductor layers 30, 40, and 50 and a reflection layer 31. It goes without saying that the light scattering surface 1 may be provided between the plurality of semiconductor layers 30, 40, and 50 and the reflective layer 51. That is, the light scattering surface 1 may be provided on one side or both sides of the plurality of semiconductor layers 30, 40, and 50. By providing the light scattering surface 1, the light L30 generated in the active layer 30 is scattered by the light scattering surface 1 and can be effectively emitted to the side of the semiconductor light emitting diode. In addition, it is possible to reduce the reflection interference to the reflection layer 31. Also, by providing the reflective layer 31 and the light scattering surface 1 at a distance from each other, it is possible to realize a heterogeneous structure of light reflection and light scattering in one semiconductor light emitting diode.

(2) As a second feature of the semiconductor light emitting diode according to the present disclosure, at least one of the reflection layer 31 and the reflection layer 51 has a distributed Bragg reflector. The distribution Bragg reflector is a reflection layer formed by repeatedly laminating two materials having different refractive indexes. Unlike the metal reflection film, reflection does not occur only at the boundary with the plurality of semiconductor layers 30, 40 and 50, but constitutes a distributed Bragg reflector Reflection occurs at the boundaries of the respective layers, and therefore, interference due to reflection can be reduced. The distributed Bragg reflector is composed of a plurality of semiconductor layers (30, 40, 50) and other materials. In the case where the distributed Bragg reflector is made of a semiconductor, the difference in the refractive index between the semiconductors is small, and the function as the reflective layer is deteriorated. For example, it may be of a non-conductive material or dielectric material (in the case of SiO 2 1.5, 2.4 in the case of TiO 2).

(3) As a third feature of the semiconductor light emitting diode according to the present disclosure, the semiconductor light emitting diode has the light transmitting material layer 1 between the plurality of semiconductor layers 30, 40, 50 and the reflective layer 31. By providing the light-transmissive material layer 1, the side length of the entire semiconductor light-emitting diode can be extended, and the light extraction efficiency to the side can be improved. The light transmissive material layer 1 may be formed of a material different from that of the plurality of semiconductor layers 30, 40, For example, in a case where the plurality of semiconductor layers 30, 40, and 50 are III-nitride semiconductors, the thickness of the plurality of semiconductor layers 30, 40, and 50 in a commercially available Group III nitride semiconductor light- Thickness. By using the light-transmissive material layer 1, the side thickness of the semiconductor light-emitting diode can be set to 50 탆 or more, preferably 80 탆 or more, and more preferably 100 탆 or more. A substrate on which a plurality of semiconductor layers 30, 40, and 50 are grown with the light transmitting material layer 1 can be used. At this time, an additional semiconductor layer 20 may be provided between the plurality of semiconductor layers 30, 40, and 50 and the light-transmitting material layer 1 as a substrate. For example, in the case of a group III nitride semiconductor light-emitting diode, it is preferable to grow the low-temperature grown seed layer and the undoped GaN prior to growing the first semiconductor layer 30 (for example, n-type GaN) It is common. This also helps to increase the overall lateral length of the semiconductor light emitting diode.

(4) As a fourth characteristic of the semiconductor light emitting diode according to the present disclosure, the reflective layer 51 is made of a non-conductive material, and the semiconductor light emitting diode is an electrode having an electrical connection 71, 81 penetrating the reflection layer 51 (70, 80). The electrode 70 is electrically connected to the second semiconductor layer 50 through the electrical connection 71 and the electrode 80 is electrically connected to the first semiconductor layer 30 through the electrical connection 81. On the electrode 80 side, an insulating layer 82 is provided to prevent electrical short circuit. The electrode 80 may be formed on the exposed first semiconductor layer 30 so that the insulating layer 82 may be omitted. For example, the reflection layer 51 may be formed of a repeated lamination of SiO 2 / TiO 2 . By connecting the electrodes 70 and 80 to an external electrode (a lead frame or an electrode pattern provided on a package, a PCB, a COB, or the like), the semiconductor light emitting diode has a flip chip shape as a whole. The semiconductor light emitting diode is advantageous in that it does not use wire bonding but also has a reflective layer 31 to emit light laterally rather than above the semiconductor light emitting diode. Therefore, the conventional semiconductor light emitting diode has a flip chip type semiconductor light emitting diode . Since the reflective layer 51 is located adjacent to the active layer 40, it may cause the problem (interference) pointed out in connection with FIG. 2, but in the case where the reflective layer 31 is made of a distributed Bragg reflector, Unlike the metal reflection film, reflection does not occur only at the boundary with the plurality of semiconductor layers 30, 40 and 50, but reflection occurs at each boundary of the lamination, so that interference due to reflection can be reduced. Reflective layer 51 is a single dielectric layer or ODR (Omni-Directional Reflector; for example, a thick stack of SiO 2 / TiO 2 / SiO 2 ) may be of a. When the reflectance of the reflective layer 51 is lowered, the electrodes 70 and 80 can assist the function of the reflective film. At this time, it is also possible to narrow the distance between the electrodes 70 and 80 or to provide a separate reflective metal between them.

(5) As a fifth characteristic of the semiconductor light emitting diode according to the present disclosure, the semiconductor light emitting diode constitutes the reflection layer 31 so that the upward radiation can be controlled. The reflective layer 51 is designed to function as a reflective layer in the side direction and partially emit light to the upper surface of the reflective layer 31.

(6)

FIG. 4 is a diagram showing an example of the overall shape of the semiconductor light emitting diode shown in FIG. 3. The semiconductor light emitting diode has a hexahedral shape as a whole. The transparent material layer 10 may be any material as long as it is a transparent material, and examples thereof include epoxy resin, silicon, Al 2 O 3 , SiC, ZnO, and the like. In the case of epoxy resin or silicon, a plurality of semiconductor layers 30, 40, and 50 may be formed and then formed thereon. In the case where the light scattering surface 1 is formed, a plurality of semiconductor layers 30, 40 and 50 are formed using a growth substrate (not shown), and then a known process (Laser Lift-off method, wet etching method Etc.), and it is possible to form the rough surface, that is, the light scattering surface 1, through the wet etching on the first semiconductor layer 30 from which the growth substrate has been removed. In the case of removing the growth substrate, the second semiconductor layer 51 is generally provided with a supporting substrate. In the case of a Group III nitride semiconductor light emitting diode, the light transmissive material layer 10 may be used as a growth substrate, and concavities and convexities may be formed on an Al 2 O 3 substrate by using a well-known PSS (Patterned Sapphire Substrate) By growing the semiconductor layers 30, 40, and 50, it becomes possible to simultaneously provide the light-transmitting material layer 10 and the light scattering surface 1. Preferably, a further semiconductor layer 20 is provided. The reflective layers 31 and 51 may be made of a conductive material such as a metal having a high reflectance such as Ag or Al or a non-conductive material such as a translucent dielectric material such as SiO x , TiO x , Ta 2 O 5 and MgF 2 . . Preferably, the reflective layer 31, 51 comprises a distributed Bragg reflector made of a translucent dielectric material that is less light absorptive and non-conductive. For example, when the reflective layers 31 and 51 are distributed Bragg reflectors made of SiO 2 / TiO 2 , they can be formed by physical vapor deposition (PVD) such as E-Beam Evaporation Do. Each thickness of the layers of constituting the distributed Bragg reflector are λ Active of / 4n 1, λ Active / 4n 2 ( where, λ Active is a wavelength of the active layer (40), n 1, n 2 is the refractive index of the distributed Bragg reflector material) . The meaning of being designed here as a reference does not mean that the distributed Bragg reflector must necessarily have a thickness that meets this criterion. The distribution Bragg reflector can be formed to be slightly thicker or thinner than the reference thickness if necessary. However, this need not change the fact that the distributed Bragg reflector must be designed on the basis of Active / 4n 1 , Active / 4n 2 . When the distributed Bragg reflector is composed of TiO 2 / SiO 2 , each layer is designed to have an optical thickness of 1/4 of a given wavelength and can have a light reflectance of 90% or more by increasing the number of layers. It usually has a lamination within 20 pairs. In the case where the reflective layer 51 is made of a non-conductive material, it is necessary to form the electrodes 70 and 80 in order to supply current to the plurality of semiconductor layers 30, 40 and 50. The electrodes 70 and 80 may be formed by forming holes or slits in the reflective layer 51 and then filling the holes or slits with a conductive material so that the electrical connections 71 and 81 can be electrically connected to the plurality of semiconductor layers 30, . All of the two electrodes 70 and 80 need not be provided on the side of the second semiconductor layer 50 but the two electrodes 70 and 80 are provided on the side of the second semiconductor layer 50, And has an advantage of improving heat dissipation efficiency. The electrodes 70 and 80 may be formed of a common material used for a semiconductor light emitting device. For example, it can be formed by stacking Ti / Ni / Au, laminating Cr / Ni / Au, laminating Ti / Al / Ni / Au, etc. and forming it with the electrical connections 71 and 81 .

5 is a view showing another example of the semiconductor light emitting diode according to the present disclosure, wherein the semiconductor light emitting diode includes a reflection layer 31 capable of adjusting the amount of light emission (Lu) above the semiconductor light emitting diode. Implementing the side light emitting diode means a semiconductor light emitting diode having a reflective layer made of a metal or a reflective layer made of a metal or a material corresponding to the reflectance of a reflective layer made of metal. However, as far as the Far Field Pattern of the conventional semiconductor light emitting diode is concerned, The amount of light directed upward of the light emitting diode is limited so that when a certain amount of light is required upwardly of the semiconductor light emitting diode, In this embodiment, the reflective layer 31 is made of a transparent material and the reflectance of the reflective layer 31 is made lower than that of the reflective layer 51, so that it is possible to cope with this need.

For example, in the case where the semiconductor light emitting diode is a semiconductor light emitting diode that emits light with a wavelength of 450 nm, and the reflective layer 31 has a distributed Bragg reflector made of SiO 2 / TiO 2 , the following structure can be constructed.

0.35L / 0.35H: 6pair + 0.30L / 0.30H: 6pair + 0.25L / 0.25H: 7pair

(L means SiO 2 , H means optical thickness indicating TiO 2 , wavelength is 450 nm, and simulation results are shown in FIG. 7 while reducing the number of cycles of 0.25 L / 0.25 H. In this case, It means that the reference angle is 0 ° in the vertical direction of the DBR and 90 ° is the angle in the horizontal direction.)

By setting the number of pairs thereof to four or more, the reflection layer 51 can have a reflectance of 90% or more. By setting the number of pairs of the reflection layer 51 to three or more, % Or more. By setting the number of pairs of these two or more, the reflection layer 51 can have a reflectance of 50% or more.

It is also possible to construct a distributed Bragg reflector with materials with small refractive index differences and to adjust the reflectance. For example, a distributed Bragg reflector can be constructed with combinations such as SiN / TiO 2 , Ta 3 O 5 / TiO 2 , SiO 2 / SiN, SiO 2 / Al 2 O 3 .

It is also possible to use the adjustment of the number of pairs constituting the distributed Bragg reflector and the adjustment of the difference of the refractive index between the layers constituting the distributed Bragg reflector.

6 is a diagram showing another example of the semiconductor light emitting diode according to the present disclosure, in which the semiconductor light emitting element includes at least one opening 32 in the reflection layer 31. In Fig. A part of the light generated in the active layer 40 through the opening 32 is emitted to the upper portion of the reflection layer 31. By adjusting the number, size, number, position, etc. of the openings 32, the amount of light emitted upward can be controlled. The openings 32 may have various shapes such as holes, slits, and the like. The reflective layer 31 may be made of a conductive material (e.g., Ag, Al) or a non-conductive material (e.g., a distributed Bragg reflector made of SiO 2 / TiO 2 ).

FIG. 7 is a graph showing changes in reflectance according to an angle according to a change in the structure of a reflective layer. The conditions are as described above, and the reflectance decreases as the number of pairs decreases. In the above case, the ratio of the upper and the side of the light through the variation of the layer corresponding to 450 nm is exemplified in the DBR, and the change of the upper and lower power The ratio can be adjusted. This means that the gist of the present disclosure means that it is possible to control the difference in the amount of light between the upper side and the lateral side through combination and modification of the constituent elements of the DBR, and the present invention is not limited to this example.

Various embodiments of the present disclosure will be described below.

(1) A semiconductor light emitting diode comprising: an active layer which generates light through recombination of electrons and holes; a first semiconductor layer provided above the active layer and having a first conductivity; and a second semiconductor layer provided below the active layer, 2. A semiconductor device comprising: a plurality of semiconductor layers having a second semiconductor layer having conductivity; A first reflective layer provided on an opposite side of the active layer with respect to the first semiconductor layer, the first reflective layer reflecting light generated in the active layer; And a second reflective layer which is provided on the opposite side of the active layer with respect to the second semiconductor layer and reflects light generated in the active layer, changes a path of light generated from the active layer, (Lateral Light-Extraction Enhancer) is provided on the semiconductor light-emitting diode. The Lateral Light-Extraction Enhancer is a light-path-changing structure in which light is scattered to increase the efficiency of light emitted to the side of the semiconductor light-emitting diode, or light is reflected by the semiconductor light-emitting diode The efficiency of emitting light to the side of the semiconductor light emitting diode may be increased or the length of the side may be increased to increase the probability that light is emitted. Alternatively, light may be emitted from the side of the semiconductor light emitting diode To increase the efficiency of emission to the outside.

(2) A semiconductor light emitting diode comprising: an active layer which generates light through recombination of electrons and holes; a first semiconductor layer provided above the active layer and having a first conductivity; and a second semiconductor layer provided below the active layer, 2. A semiconductor device comprising: a plurality of semiconductor layers having a second semiconductor layer having conductivity; A first reflective layer provided on an opposite side of the active layer with respect to the first semiconductor layer and having a first reflectivity so as to reflect light generated in the active layer; And a second reflective layer provided on the opposite side of the active layer with respect to the second semiconductor layer and reflecting the light generated in the active layer, And a second reflective layer having a second reflectance lower than the first reflectivity. Here, the second reflectance is lower than the first reflectivity, which means that when the reflectance of the material (s) constituting the second reflective layer is lower than that of the substance (s) constituting the first reflective layer, Even if the reflectance of the substance (s) is equal to or higher than that of the substance (s) constituting the first reflective layer, the amount of reflection of the second reflective layer is smaller than the amount of reflection of the first reflective layer ≪ / RTI >

(3) The semiconductor light emitting diode according to claim 1, wherein the second reflective layer has a distributed Bragg reflector.

(4) The first reflective layer and the second reflective layer each have a distributed Bragg reflector, and the number of pairs of distributed Bragg reflectors of the second reflective layer is smaller than the number of pairs of distributed Bragg reflectors of the first reflective layer. Semiconductor light emitting diode.

(5) The first reflective layer and the second reflective layer each have a distributed Bragg reflector, and the difference in the refractive indexes of the materials constituting the distributed Bragg reflector of the second reflective layer is smaller than the refractive index difference of the materials constituting the distributed Bragg reflector of the first reflective layer Wherein the semiconductor light emitting diode is a semiconductor light emitting diode.

(6) The semiconductor light emitting diode according to (6), wherein the second reflective layer has an opening through which a part of the light generated in the active layer passes through the second reflective layer and is emitted upward.

(7) The semiconductor light-emitting diode according to any one of (1) to (7), wherein the second reflective layer is made of metal.

(8) The semiconductor light emitting diode according to any one of (1) to (5), wherein the second reflective layer reflects light of 50% or more. With this configuration, the semiconductor light emitting diode can be a semiconductor light emitting diode having a stronger side emission.

(9) The semiconductor light-emitting diode according to any one of (1) to (3), wherein the second reflective layer reflects 80% or more of light.

(10) A semiconductor light emitting diode comprising a light scattering surface between a second reflective layer and a plurality of semiconductor layers.

(11) A semiconductor light-emitting diode comprising a light-transmissive material layer between a second reflective layer and a plurality of semiconductor layers.

According to one semiconductor light emitting diode according to the present disclosure, the amount of light emitted upward can be controlled.

According to another semiconductor light emitting diode according to the present disclosure, it is possible to improve the light emission to the side.

According to another semiconductor light emitting diode according to the present disclosure, it is possible to reduce the interference phenomenon caused by the reflective film.

According to another semiconductor light emitting diode according to the present disclosure, a flip chip type side light emitting semiconductor light emitting diode can be realized.

According to another semiconductor light emitting diode according to the present disclosure, a semiconductor light emitting diode having a light scattering surface in a flip chip can be realized.

The first semiconductor layer 30, the active layer 40, the second semiconductor layer 50, the reflective layer 31, the reflective layer 51,

Claims (10)

In a semiconductor light emitting diode,
A first semiconductor layer provided above the active layer and having a first conductivity and a second semiconductor layer provided below the active layer and having a second conductivity different from the first conductivity, A plurality of semiconductor layers,
A first reflective layer provided on an opposite side of the active layer with respect to the first semiconductor layer and having a first reflectivity so as to reflect light generated in the active layer; And,
A second reflective layer provided on the opposite side of the active layer with respect to the second semiconductor layer and reflecting the light generated in the active layer, the first reflective layer having a first reflectance such that a part of light generated in the active layer passes through the second reflective layer, And a second reflective layer having a second reflectance lower than that of the second reflective layer. The method according to claim 1,
And the second reflective layer has a distributed Bragg reflector. The method according to claim 1,
Wherein the first reflective layer and the second reflective layer each have a distributed Bragg reflector and the number of pairs of distributed Bragg reflectors of the second reflective layer is smaller than the number of pairs of distributed Bragg reflectors of the first reflective layer. . The method according to claim 1,
The first reflective layer and the second reflective layer each have a distributed Bragg reflector and the difference in the refractive indexes of the materials constituting the distributed Bragg reflector of the second reflective layer is smaller than the refractive index difference of the materials constituting the distributed Bragg reflector of the first reflective layer. Semiconductor light emitting diode. The method according to claim 1,
And the second reflective layer has an opening so that a part of the light generated in the active layer passes through the second reflective layer and is emitted upward. The method according to claim 1,
And the second reflective layer is made of metal. The method according to claim 1,
And the second reflective layer reflects 50% or more of light. The method according to claim 1,
And the second reflective layer reflects 80% or more of light. The method according to claim 1,
And a light scattering surface between the second reflective layer and the plurality of semiconductor layers. The method according to claim 1,
And a light-transmissive material layer between the second reflective layer and the plurality of semiconductor layers.
KR1020130127825A 2013-10-25 2013-10-25 Semiconductor light emitting diode KR20150047844A (en)

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PCT/KR2014/010070 WO2015060687A1 (en) 2013-10-25 2014-10-24 Semiconductor light emitting diode

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Cited By (6)

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WO2018030680A1 (en) * 2016-08-12 2018-02-15 주식회사 세미콘라이트 Semiconductor light-emitting device
CN107706291A (en) * 2016-08-08 2018-02-16 株式会社迪思科 The manufacture method and light-emitting diode chip for backlight unit of light-emitting diode chip for backlight unit
KR20180102009A (en) * 2017-03-06 2018-09-14 가부시기가이샤 디스코 Method for manufacturing light emitting diode chip and light emitting diode chip
KR20180102007A (en) * 2017-03-06 2018-09-14 가부시기가이샤 디스코 Method for manufacturing light emitting diode chip and light emitting diode chip
KR20180102010A (en) * 2017-03-06 2018-09-14 가부시기가이샤 디스코 Method for manufacturing light emitting diode chip and light emitting diode chip
KR20180102011A (en) * 2017-03-06 2018-09-14 가부시기가이샤 디스코 Method for manufacturing light emitting diode chip and light emitting diode chip

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107706291A (en) * 2016-08-08 2018-02-16 株式会社迪思科 The manufacture method and light-emitting diode chip for backlight unit of light-emitting diode chip for backlight unit
WO2018030680A1 (en) * 2016-08-12 2018-02-15 주식회사 세미콘라이트 Semiconductor light-emitting device
KR20180102009A (en) * 2017-03-06 2018-09-14 가부시기가이샤 디스코 Method for manufacturing light emitting diode chip and light emitting diode chip
KR20180102007A (en) * 2017-03-06 2018-09-14 가부시기가이샤 디스코 Method for manufacturing light emitting diode chip and light emitting diode chip
KR20180102010A (en) * 2017-03-06 2018-09-14 가부시기가이샤 디스코 Method for manufacturing light emitting diode chip and light emitting diode chip
KR20180102011A (en) * 2017-03-06 2018-09-14 가부시기가이샤 디스코 Method for manufacturing light emitting diode chip and light emitting diode chip

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