TWI768337B - Die bonding device and manufacturing method of semiconductor device - Google Patents

Abstract

An object of the present invention is to provide a die bonder that mounts a semiconductor wafer (die) on a temporary substrate with high positioning accuracy on a temporary substrate that has not been marked. The solution is that the die-bonding device has: A bonding head for placing the picked-up die on the upper surface of a substrate having a plurality of regions; a drive for moving the aforementioned engagement head; a camera device for capturing the aforementioned die; and A control device for controlling the driving unit and the imaging device. The control device is configured to: bond a first die and a second die on the substrate, use the first die and the second die as a reference, bond a third die, and use the first die or the second die as a reference. The second die and the third die are used as a reference to bond the die.

Description

Die bonding device and manufacturing method of semiconductor device

This case is about a die attach device, which can be applied to die placement for, for example, fan-out panel level packaging.

In the field of electronic component mounting, a temporary substrate and a plurality of semiconductor chips arranged on an adhesive layer laminated on the temporary substrate are sealed together with a sealing resin, thereby forming a plurality of semiconductor chips and covering a plurality of semiconductor chips. After the sealing body of the sealing resin of the semiconductor wafer, the temporary substrate including the adhesive layer is peeled from the sealing body, and the rewiring layer is formed on the surface to which the adhesive layer of the sealing body is attached. In this case, the bonding accuracy between the rewiring layer and the semiconductor wafer depends on the positioning accuracy of the wafer on the temporary substrate. Therefore, it is necessary to improve the positioning accuracy at the time of mounting the semiconductor wafer on the temporary substrate. [Prior Art Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open No. 2014-45013 [Patent Document 2] Japanese Patent Laid-Open No. 2018-133353

(The problem to be solved by the invention)

A mark for positioning correction of the bonding target position is applied to the temporary substrate, and the bonding positioning position is corrected using the mark position, thereby improving the positioning accuracy of the temporary substrate with respect to the temporarily fixed semiconductor wafer. However, the position at which the mark is applied on the temporary substrate is determined according to the structure and size of the semiconductor wafer, and the arrangement relationship between the final semiconductor wafer and the sealing body. That is, it is necessary to prepare temporary substrates with predetermined marks corresponding to the structure, size, and arrangement of components of the final product. Therefore, it is necessary to produce a plurality of temporary substrates having predetermined marks per product, and thus there is a problem that the cost increases. The subject of this application is to provide a die bonder that mounts a semiconductor wafer (die) on a temporary substrate with high positioning accuracy on a temporary substrate that has not been marked. (means to solve the problem)

A brief outline of the representative persons in this case is as follows. That is, the die bonding device is equipped with: A bonding head for placing the picked-up die on the upper surface of a substrate having a plurality of regions; a drive for moving the aforementioned engagement head; a camera device for capturing the aforementioned die; and A control device for controlling the driving unit and the imaging device. The control device is configured to: bond a first die and a second die on the substrate, use the first die and the second die as a reference, bond a third die, and use the first die or the second die as a reference. The second die and the third die are used as a reference to bond the die. [Effect of invention]

According to the above-mentioned die bonding apparatus, the precision of the die placement can be improved.

Hereinafter, a comparative example, an embodiment, a modification example, and an example will be described with reference to the drawings. However, in the following description, the same component is denoted by the same reference numeral, and the repeated description may be omitted. In addition, in the drawings, the width, thickness, shape, etc. of each part are schematically shown rather than the actual form for the purpose of clear explanation, but they are only an example and do not limit the interpreter of the present invention.

A fan-out wafer level package (Fan Out Wafer Level Package: FOWLP) is a package in which a redistribution layer is formed in a wide area exceeding the chip area. Fan Out Panel Level Package (FOPLP) is a thinker that breaks through FOWLP and manufactures together. In FOWLP, a large number of silicon dies are loaded on a wafer with a diameter of 300 mm, and the packaging is carried out at the same time, thereby reducing the manufacturing cost per package. It is FOPLP that applies the idea of collective manufacturing to panels (panel-shaped substrates) larger than wafers. As a panel, a printed circuit board or a glass substrate (for example, a substrate for liquid crystal panel production, etc.) is used.

There are many types of manufacturing processes of FOPLP, one of which is to adhere the die picked up from the wafer to the panel (hereinafter referred to as the substrate) as the temporary substrate through the adhesive main agent applied to the substrate A method of forming a rewiring or a pad (PAD) by peeling off the sealing body from the substrate after temporarily fixing and sealing together with a sealing resin. In this method, in order to maintain the yield and quality, it is necessary to mount the die on the substrate with high precision. Due to the miniaturization of the die and the high-density wiring, high precision such as 3 to 5 μm is required.

To increase the precision of the manufacturing apparatus, a method of aligning such as a mark that serves as a reference for positioning is preliminarily arranged on the substrate. However, when the substrate is processed to form a target mark, the size of the part to be manufactured is changed, etc. on the substrate (as a model) It is difficult to reuse the substrate, and the alignment marks are formed on the substrate with an accuracy of less than 3 to 5 μm, which is costly, and the increase in the cost of the substrate leads to an increase in the price of the package. Therefore, it is necessary to mount the die on the unmarked plain substrate with high precision, and the manufacturing apparatus is also expensive. In order to reduce the cost of FOPLP, it is necessary to realize a high-precision and low-cost installable manufacturing apparatus.

Then, the inventors reviewed the technology (comparative example) of bonding a die on a substrate and using the die as a positioning reference. This is explained with reference to FIGS. 1 to 3 . FIG. 1 is a diagram showing an outline of a die bonding apparatus. FIG. 2 is a top view showing a substrate to which a substrate reference die of a comparative example is bonded. FIG. 3 is a top view showing a substrate to which a plurality of dies are bonded using the substrate reference die of FIG. 2 as a reference position.

As shown in FIG. 1 , the die bonding apparatus BD includes a bonding head BH for bonding the die D to the substrate P, a camera device CM for capturing the die D or the substrate P, and a controller for controlling the bonding head BH and the camera device CM Device CNT.

As shown in FIG. 2 , first, at two points defined as the overall reference on the substrate P, the control device CNT uses the bonding head BH to bond the substrate reference dies RD1 and RD2 at the positions with the precision of the die bonding device BD. . Here, the substrate P has a rectangular shape in plan view, one side extends in the X-axis direction, and the other side intersecting with one side extends in the Y-axis direction. The region DR on which the die D is mounted, indicated by four straight lines of two-dotted lines, is a rectangular region smaller than that of the substrate P. As shown in FIG. For example, in this comparative example, the substrate reference die RD1 is bonded to the lower left end of the region DR, and the substrate reference die RD2 is bonded to the upper right end. The substrate reference die RD1 and RD2 may also be the upper left and the lower right, respectively. The die D is bonded at the intersection of a straight line extending in the X-axis direction and the Y-axis direction of the dotted line in the region DR. In addition, the substrate reference crystal grains RD1 and RD2 are product crystal grains like the crystal grain D. FIG.

After bonding, the control device CNT captures the substrate reference die RD1, RD2 with the camera CM, identifies (measures) the positions of the substrate reference die RD1, RD2, and stores the positions and distances in the memory device MM.

Next, the control device CNT picks up the die D bonded by the bonding head BH from the wafer, recognizes the positions of the substrate reference die RD1 and RD2 with the camera device CM, and calculates the position and distance of the substrate reference die RD1 and RD2. The amount of positional change when gluing. Based on the calculation results, the positions, pitches, and inclinations of bonding are calculated from the changes in positions and distances, using RD1 and RD2 as a reference, and the positions of the bonded crystal grains D are corrected and calculated. Then, based on the corrected calculation result, as shown in FIG. 3 , the die D are bonded in sequence. However, FOPLP needs to be large in size (eg, 515 mm×510 mm, etc.), and on a substrate without a positioning reference, a large number of die are bonded with high precision such as 3 to 5 μm. However, due to changes in ambient temperature, changes in substrate temperature required for the process, changes in equipment over time, etc., there are changes such as expansion and contraction of the substrate during bonding, which affects the accuracy after bonding. For example, as shown in FIG. 3 , if bonding is performed from below the substrate reference die RD2 on the upper right according to the two-point reference of the substrate reference die RD1 and RD2 , the bonding deviation PA caused by the temporal change in bonding occurs. Here, the adhesion deviation PA is an error including an influence due to the distance from the substrate reference die RD2 becoming farther, an error due to a change in the expansion and contraction of the substrate due to the elapse of time from the reference measurement, and the like.

<Embodiment> 1, 4 to 8, an embodiment for reducing the above-mentioned adhesion variation will be described. FIG. 4 is a flowchart showing the bonding method of the embodiment. 5 is a top view showing a substrate to which the substrate reference die of the embodiment is bonded. FIG. 6 is a top view showing a substrate to which block reference die is bonded with the substrate reference die of FIG. 5 as a reference position. FIG. 7 is a top view showing a substrate to which the dies are bonded using the substrate reference die and the block reference die of FIG. 6 as reference positions. FIG. 8 is a top view showing the substrate to which all the die in the first block are bonded.

For example, FOPLP is implemented by distributing the pattern exposure for forming rewiring to a block that is a region where the die D arranged on the substrate P gathers, so the accuracy is as long as the bonding pitch accuracy can be manifested in the block. Can. Therefore, in the control device CNT of the embodiment, the substrate reference die RD1 serving as the first die and the substrate reference die RD2 serving as the second die are bonded to the substrate P, and the substrate reference die RD1 and the substrate reference die RD2 are used as the substrate reference die RD1 and the substrate reference die RD2. For the reference, the block reference die BRD serving as the third die is bonded, and the die is bonded with the substrate reference die RD1 or the substrate reference die RD2 and the block reference die BRD as the reference.

More specifically, by bonding the die D in a procedure as shown in FIG. 4 , it is possible to cope with the bonding accuracy, the variation of the substrate with time, and the thermal expansion correction.

(Step S1: Adhesion of the substrate reference die) As shown in FIG. 5 , first, the control device CNT defines two points serving as an overall reference on the substrate P as in the comparative example, and the substrate reference die serving as the first die is bonded by the bonding head BH at these positions. RD1 and the substrate reference die RD2 as the second die. Here, the substrate reference die RD1 and the substrate reference die RD2 are ideally separated as much as possible, for example, they are bonded to the upper right end and the lower left end of the diagonal of the region DR on the substrate P. Here, the substrate P has a first side SD1, a second side SD2 intersecting with the first side SD1, a third side SD3 intersecting with the second side SD2 and facing the first side SD1, and The fourth side SD4 that intersects with the third side SD3 and is opposed to the second side SD2 forms a rectangular shape. The first side SD1 and the third side SD3 extend in the Y-axis direction, and the second side SD2 and the fourth side SD4 extend in the X-axis direction.

More specifically, in the control device CNT, the substrate reference die RD1 is bonded to the lower left end ((X0, Y0)) of the region DR, and the substrate reference die RD2 is bonded to the upper right end ((Xn, Yn)). In the control device CNT, the die D is bonded at the intersection of a straight line extending in the X-axis direction and the Y-axis direction of the dotted line in the region DR. That is, the control device CNT is a block bonding substrate reference that is closest to the first corner portion C1 formed by the first side SD1 and the second side SD2 as the first region among the plurality of blocks BL to be described later. For the die RD1, the substrate reference die RD2 is bonded to a block closest to the second corner portion C2 formed by the third side SD3 and the fourth side SD4 as the second region. Here, the block BL is a general term for a plurality of blocks to be described later. After bonding, the control device CNT captures the substrate reference die RD1, RD2 with the camera CM, identifies (measures) its position, and compares the position (X0, Y0) of the substrate reference die RD1 on the lower left and the substrate reference die on the upper right. The position (Xn, Yn) of RD2 and the distance between them are stored in the memory device MM. In addition, the substrate reference crystal grains RD1 and RD2 are product crystal grains similarly to the crystal grains D. FIG.

(Step S2: Bonding of block reference die) Next, as shown in FIG. 6 , the control device CNT uses the bonding head BH to bond the block reference dies RD1 and RD2 bonded in step S1 as the reference for the above-mentioned blocks. BRD. Here, the block reference grain BRD is a general term for a plurality of block reference grains to be described later. At this time, the control device CNT also uses the camera CM to capture the position of the reference die BRD of each block after bonding, and uses the substrate reference die RD1 and RD2 bonded in step S1 as a reference to recognize the position and measure the distance, and measure the distance of each block. The position (distance) of the block reference die BRD is stored in the memory device MM. In addition, the block reference crystal grain BRD is a product crystal grain like the crystal grain D. FIG. Here, the region DR of the substrate P is divided into nine blocks BL, and 14 block reference dies BRD are bonded. Each block BL is a rectangular region and has the same size (area).

More specifically, the block reference die BRD30 is bonded at the intersection (Xn, Y0) of a dotted line extending in the X-axis direction through the substrate reference die RD1 and a dotted line extending in the Y-axis direction through the substrate reference die RD2. The block reference die BRD03 is bonded at the intersection (X0, Yn) of a dotted line extending in the Y-axis direction through the substrate reference die RD1 and a dotted line extending in the X-axis direction through the substrate reference die RD2. Furthermore, the block reference die BRD10 and BRD20 are bonded at equal intervals between the substrate reference die RD1 and the block reference die BRD30. In addition, the block reference die BRD01 and BRD02 are bonded at equal intervals between the substrate reference die RD1 and the block reference die BRD03. In addition, the block reference die BRD31 and BRD32 are bonded at equal intervals between the block reference die BRD30 and the substrate reference die RD2. In addition, the block reference die BRD13 and BRD23 are bonded at equal intervals between the block reference die BRD03 and the substrate reference die RD2. In addition, the block reference die BRD11 and BRD12 are bonded at equal intervals between the block reference die BRD10 and the block reference die BRD13. In addition, the block reference die BRD21 and BRD22 are bonded at equal intervals between the block reference die BRD20 and the block reference die BRD23.

(Step S3: Bonding of Dies) Next, as shown in FIG. 7 , the control device CNT uses any one of the substrate reference die RD1 and RD2 bonded in step S1 and each block reference die BRD bonded in step S2 as a reference position, by bonding The head BH is used to bond the die D in each block (step S3).

More specifically, before bonding each die D, the control device CNT uses the camera device CM to capture the block reference die BRD and the substrate reference die RD1 or the substrate reference die RD2 to identify the block reference die BRD. The distance is measured with respect to the position and the position of the substrate reference die away from the position (step S31 ). The control device CNT calculates the difference in position and distance from the block reference die BRD measured in step S2, calculates the amount of expansion and contraction of the substrate P, and corrects the bonding position (step S32). The control device CNT uses the bonding head BH to bond the die D to the corrected bonding position (step S33 ). 7 shows an example in which the die D is bonded in the block BL33, but the block reference die RD2 and the substrate reference die RD1 are used as the block reference die in the block BL33.

Once the bonding of the die D in the block BL33 is completed (in the case of YES in step S34 ), it moves to the next block (step S36 ). For example, the next block is set as the block BL32, and in the block BL32, steps S31 to S34 are repeated to bond the die D. In this case, as shown in FIG. 8 , the block reference die BRD32 is used as the block reference die, and the substrate reference die RD1 is used as the substrate reference die. Thereafter, the block reference die located on the upper right of each block is used.

Thereafter, the control device CNT performs the bonding of the die D in the blocks in the order of, for example, blocks BL32, BL31, BL23, BL22, BL21, BL13, BL12, and BL11. Once the die D in all the blocks are bonded (in the case of YES in step S35 ), the process ends. When bonding the die D in the blocks BL31, BL23, BL22, and BL13, the substrate reference die RD1 is used as the substrate reference die. When bonding the die D in the blocks BL21 and BL12, the substrate reference die RD1 or the substrate reference die RD2 is used. When the die D in the block BL11 is bonded, the block reference die BRD11 is used as the block reference die, and the substrate reference die RD2 is used as the substrate reference die. In addition, blocks BL33, BL32, BL31, BL23, BL22, BL21, BL13, BL12, BL11 are the same size.

In addition, the control device CNT recognizes the block reference die and the substrate reference die at the start of production, and corrects the expansion and contraction of the substrate when the production is restarted after being stopped due to an error or the like. .

In the above-mentioned bonding method, the die D is not bonded in the regions BL10, BL20, BL30, BL01, BL02, and BL03 surrounded by the ellipse in FIG. 8 . When these areas are bonded, for example, these areas are treated as blocks in the same manner as the above-mentioned blocks. However, these blocks are areas of one row or one column, which are smaller areas than the blocks described above. In this case, the substrate reference die RD1 is used as the substrate reference die, and the block reference die BRD10, BRD20, BRD30, BRD01, BRD02, and BRD03 are respectively used for the block reference die to bond the die D.

Another bonding method is to include the regions BL10, BL20, BL30, BL01, BL02, and BL03 in other blocks to bond the die D. In this case, the size of the blocks is not the same. Specifically, regions BL10 and BL01 are included in block BL11, region BL20 is included in block BL21, region BL30 is included in block BL31, region BL02 is included in block BL12, and region BL03 is included in block BL13 .

<Variation> Hereinafter, representative modifications will be described with reference to several examples. In the description of the following modified examples, the same reference numerals as those in the above-described embodiment are used for the parts having the same configuration and function as those described in the above-described embodiment. In addition, in the description of such a part, the description of the above-mentioned embodiment can be suitably used in the range which does not contradict technically. In addition, a part of the above-mentioned embodiment and all or part of the plural modifications can be applied in combination as appropriate within the range that does not contradict technically.

(first modification) The bonding method according to the first modification will be described with reference to FIG. 9 . FIG. 9 is a diagram for explaining the bonding method of the first modification, and shows a top view of the substrate to which all the die in the first block are bonded.

Before the bonding of each die D, if the bonding position correction in steps S31 and S32 is performed, when the productivity is reduced, the block size is small, and when bonding is possible in a short time, the control device CNT may be only in each block. When the bonding is started, the bonding position correction in steps S31 and S32 is performed. The other steps of the bonding method of the first modification are the same as those of the bonding method of the embodiment.

As shown in FIG. 9 , in the block BL33 , only when the die D directly under the reference die RD2 of the substrate is bonded, the control device CNT performs the bonding position correction in steps S31 and S32 , and bonds other parts in the block BL33 In the case of the die D, the control device CNT does not perform the measurement of the bonding position in step S31, and performs correction in step S32 using the result of the measured value (step S31) used for bonding the die D directly under it. Similarly, in the block BL32, only when the die D directly under the block reference die BRD32 is bonded, the control device CNT performs the bonding position correction in steps S31 and S32, and when bonding other dies in the block BL32 , the control device CNT does not perform the bonding position correction in steps S31 and S32, and performs the correction in step S32 using the result of the measured value (step S31) used in bonding the die D directly below. The bonding of the die D in the other blocks is performed in the same manner. Thereby, the number of times of the bonding position correction of step S31 can be reduced more significantly than that of the embodiment.

(Second modification example) The bonding method according to the second modification will be described with reference to FIG. 10 . FIG. 10 is a diagram illustrating a bonding method according to a second modification, and shows a top view of a substrate to which four rows of die in the first block are bonded.

In the bonding position correction in steps S31 and S32 when the bonding of each block in the first modification is started, it takes time for bonding from the defined block size, and when there is an influence of thermal expansion or temporal change, it can also be used within the block. When the bonding of each row is started, the bonding position correction in steps S31 and S32 is performed. The other steps of the bonding method of the second modification are the same as those of the bonding method of the embodiment.

As shown in FIG. 10, in block BL33, the first die D in the first row (the die D directly under the substrate reference die RD2), the first die D in the second row, ･･ ･, and the first die D in the sixth row (last row), the control device CNT performs the bonding position correction in steps S31 and S32, and when the second and subsequent dies in each row are bonded, the control device CNT is The bonding position correction in steps S31 and S32 is not performed. Thereby, the number of times of the bonding position correction of steps S31 and S32 can be reduced more than in the embodiment.

(third modification) When the first modification is the start of bonding in the block, the second modification is when the bonding of the row in the block is started, and the execution time of the bonding position correction in steps S31 and S32 is determined according to the bonding position, but also It is possible to set the number of times of bonding, the elapsed time, etc., and the bonding position correction of steps S31 and S32 is performed at every predetermined interval at the place exceeding the setting. The other steps of the bonding method of the third modification are the same as those of the bonding method of the embodiment.

(Fourth modification example) 11 is a top view showing a substrate to which the substrate reference die and the block reference die of the fourth modification are bonded.

In the control device CNT, among the plurality of blocks BL, the substrate reference die RD1 is bonded to the block BL11 closest to the first corner C1 formed by the first side SD1 and the second side SD2 as the first region, The substrate reference die RD2 is bonded to the block BL66 closest to the second corner portion C2 formed by the third side SD3 and the fourth side SD4 as the second region.

In step S1 of the embodiment, the control device CNT adheres the substrate reference die RD1 to the lower left end of the region DR, and the substrate reference die RD2 to the upper right end. In step S2, the control device CNT bonds the block reference die BRD on the upper right of each block. On the other hand, in step S1 of the fourth modification, as shown in FIG. 11 , the control device CNT bonds the substrate reference die RD1 to the lower right of the lower left block BL11 and to the lower right of the upper right block BL66 Bond substrate reference die RD2. In step S2, the control device CNT adheres the block reference die BRD to the lower right of each block except for the blocks BL11 and BL66. The control device CNT is to bond the block reference die BRD12, BRD13, BRD14, BRD15, BRD16, ･･･ , BRD61, BRD62, BRD63, BRD64, BRD65. That is, the control device CNT does not adhere the block reference die BRD as the third die in the block BL11 as the first region and the block BL66 as the second region.

Thereby, the shape or size of each block can be made the same. In addition, the block reference die BRD may be bonded to the upper left of each block, the substrate reference die RD1 may be bonded to the upper left of the lower left block BL11, and the substrate reference die RD2 may be bonded to the upper left of the upper right block BL66.

(Fifth modification example) 12 is a top view showing a substrate to which the substrate reference die and the block reference die of the fifth modification are bonded.

In the embodiment, the control device CNT is used to bond the die D with one bonding head provided on the bonding table (Y beam), but in the fifth modification example, the control device CNT is provided with two bonding tables on the bonding table. The bonding head of (Y beam) picks up the die D alternately, and bonds it to the board|substrate P.

The control device CNT bonds the substrate reference die RD1 and RD2 and the block reference die BRD in the same manner as in the fourth modification, for example. At this time, one bonding head set on the bonding table (Y beam) can be used for bonding, or two bonding heads positioned on the bonding table (Y beam) can be used for bonding.

The control device CNT is, for example, using the bonding head of the first bonding stage (Y beam), bonding the die D to the block BL36 according to the substrate reference die RD1 and the block reference die BRD36, and using the second bonding stage (Y beam). ), the die D is bonded to the block BL66 according to the substrate reference die RD1 and the substrate reference die RD2. At this time, the control device CNT picks up the die D alternately by the two bonding heads provided on the bonding table (Y beam), and bonds them to the substrate P. As shown in FIG.

(Sixth modification example) FIG. 17 is a top view showing a substrate in which the die is bonded using the substrate reference die and the block reference die according to the sixth modification as reference positions.

In the sixth modification, the arrangement of the block reference dies is designed, as in the regions BL10, BL20, BL30, etc. in FIG. 8 of the embodiment, although the block reference dies BRD are bonded, there are no unbonded dies D. Location. That is, one row at the left end and one row at the lower end of FIG. 8 are for the substrate reference die and the block reference die to be unbonded. Here, the number of blocks and the number of crystal grains placed in each block in the sixth modification are the same as those of the embodiment. Also, as shown in FIG. 17 , the block reference die BRD12 and BRD13 of the blocks BL12 and BL13 are arranged not at the upper right in the block but at the lower left. Then, the block reference die BRD11 of the block BL11 is removed, and the substrate reference die RD1 is arranged in the lower left of the block BL11. In addition, the substrate reference crystal grain RD1 is located at the upper right by one grain fraction of the substrate reference crystal grain RD1 in FIG. 8 .

In this way, a layout in which the distance between the reference dies is ensured, and the ends of the blocks are all included in each block. Although the block reference dies BRD as described above are bonded, there are no unbonded dies D. Areas like BL01, BL01, BL03, BL10, BL20, and BL30 can be bonded efficiently.

Hereinafter, an example of application to FOPLP will be described as an embodiment, but it is not limited to this, and it can be applied to those using a temporary substrate. [Example]

FIG. 13 is a top view showing the outline of a flip chip bonder according to the embodiment. FIG. 14 is a diagram illustrating an operation of picking up the flip-chip head, the transfer head, and the bonding head when viewed from the direction of arrow A in FIG. 13 .

The flip chip bonder 10 as a die bonder is roughly divided into a die supply unit 1 , a pick-up unit 2 , a transfer unit 8 , an intermediate stage unit 3 , a bonding unit 4 , a transfer unit 5 , a substrate supply unit 6K, and a substrate unloading unit. The part 6H, the control device 7 which monitors and controls the operation|movement of each part.

First, the die supply unit 1 supplies the die D mounted on the substrate P. As shown in FIG. The die supply unit 1 has: a wafer holding table 12 holding the divided wafers 11; Lifting unit 13 shown by the dotted line lifting die D from wafer 11; and The wafer ring supply unit 18 . The die supply unit 1 is moved in the XY directions by driving means not shown, and moves the picked up die D to the position of the lift-up unit 13 . The wafer ring supply unit 18 is a wafer cassette that accommodates the wafer rings 14 (see FIG. 14 ), and sequentially supplies the wafer rings 14 to the die supply unit 1 and replaces them with new wafer rings 14 . The die supply unit 1 moves the wafer ring 14 to the pick-up point so that the desired die D can be picked up from the wafer ring 14 . The wafer ring 14 is a jig that fixes the wafer 11 and can be mounted on the die supply unit 1 .

The pickup unit 2 includes a pickup flip-chip head 21 that picks up and reverses the die D, and each drive unit (not shown) that moves a collet 22 up and down, rotates, reverses, and moves in the X direction. With this configuration, the pick-up flip-chip head 21 picks up the die, and the pick-up flip-chip head 21 is rotated by 180 degrees, the bumps of the die D are reversed to face downward, and the die D is passed to the transfer head 81. posture.

The transfer unit 8 receives the inverted die D from the pickup head 21 and mounts it on the intermediate stage 31 . The transfer unit 8 includes a transfer head 81 including a chuck 82 for sucking and holding the die D at the tip similarly to the pick-up flip-chip head 21 , and a Y drive unit 83 for moving the transfer head 81 in the Y direction.

The intermediate stage portion 3 includes an intermediate stage 31 on which the die D is temporarily placed, and a stage identification camera 34 . The intermediate stage 31 is movable in the Y-axis direction by a drive unit (not shown).

The bonding portion 4 picks up the die D from the intermediate stage 31 and bonds it to the transferred substrate P. Here, as the substrate P, a glass panel is used. The joint 4 has: The bonding head 41 is provided with the chuck 42 that attracts and holds the die D at the front end similarly to the pick-up flip-chip head 21; The Y-beam 43 as the driving part for moving the joint head 41 in the Y-axis direction; Capture the substrate reference dies RD1, RD2 (refer to FIG. 5), etc., as the substrate recognition camera 44 of the camera device for recognizing the bonding position; and X beam 45. As shown in FIG. 12 , the X beam 45 is provided in the vicinity of the conveyance rails 51 and 52 , the Y beam 43 extends in the Y-axis direction so as to straddle the joining platform BS, and both ends are connected by the X beam 45 . It is supported freely in the X-axis direction.

The bonding head 41 is a device having a chuck 42 detachably holding the die D by vacuum suction, and is attached to the Y beam 43 so as to reciprocate in the Y-axis direction and the Z-axis direction. The bonding head 41 has a function of holding and conveying the die D picked up from the intermediate stage 31 , and mounting the die D on the substrate P that is adsorbed and fixed to the bonding stage BS. In addition, when the bonding head 41 is moved to the side of the intermediate stage 31 rather than the X beam 45 , the bonding head 41 is raised, and the chuck 42 is formed higher than the X beam 45 .

With such a configuration, the bonding head 41 picks up the die D from the intermediate stage 31 , and bonds the die D to the substrate P based on the imaging data of the substrate identification camera 44 . The bonding head 41 is the bonding head BH corresponding to the embodiment, and the board recognition camera 44 is the imaging device CM corresponding to the embodiment.

The conveyance part 5 is provided with the conveyance rails 51 and 52 which the board|substrate P moves in the X-axis direction. The conveyance rails 51 and 52 are set to be parallel. With this configuration, the substrate P is unloaded from the substrate supply unit 6K, moved to the bonding position along the conveyance rails 51, 52, moved to the post-bonded substrate delivery unit 6H, and delivered to the substrate delivery unit 6H. The die D is bonded to the substrate P, and the substrate supply unit 6K carries out a new substrate P and waits on the transfer rails 51 and 52 .

The control device 7 includes a memory that stores a program (software) for monitoring and controlling the operation of each part of the flip chip bonder 10 , and a central processing unit (CPU) that executes the program stored in the memory. For example, the control device 7 acquires image information from the board recognition camera 44 and the board recognition camera 44, various information such as the position of the bonding head 41, and stores it in the memory, and controls each component such as the bonding operation of the bonding head 41. each action.

FIG. 15 is a schematic cross-sectional view showing a main part of the crystal grain supply unit of FIG. 13 . As shown in FIG. 15, the die supply unit 1 has: expansion ring 15 holding wafer ring 14; is held on the wafer ring 14, and the dicing tape 16 with the plurality of dies D attached thereto is positioned on the horizontal support ring 17; and The jacking unit 13 for jacking up the die D to the top. In order to pick up the predetermined die D, the lift unit 13 is moved in the up-down direction by a drive mechanism not shown, and the die supply unit 1 is movable in the horizontal direction. In addition, the substrate reference die RD1 , RD2 and the block reference die BRD are located in the wafer 11 similarly to the die D.

Next, the bonding method (manufacturing method of a semiconductor device) performed in the flip chip bonder of the embodiment will be described with reference to FIG. 16 . FIG. 16 is a flowchart showing a bonding method performed in the flip chip bonder of FIG. 13 . Before the following steps, the wafer ring 14 holding the dicing tape 16 having the die D is carried in, and the substrate P having a plurality of regions is carried in.

(Step S21: Wafer Die Pickup) The control device 7 moves the wafer holding table 12 so that the picked up die D is directly above the lift unit 13 , and positions the peeling target die on the lift unit 13 and the chuck 22 . The jacking unit 13 is moved so that the upper surface of the jacking unit 13 comes into contact with the backside of the dicing tape 16 . At this time, the control device 7 adsorbs the dicing tape 16 to the upper surface of the push-up unit 13 . The control device 7 lowers the chuck 22 while evacuating, so as to land on the die D to be peeled, and adsorb the die D. The control device 7 lifts the chuck 22 to peel the die D from the dicing tape 16 . Thereby, the die D is picked up by the pickup flip-chip head 21 . The substrate reference die RD1 and RD2 in step S1 and the block reference die BRD in step S2 are picked up by the flip-chip pickup head 21 in the same manner as the die D.

(Step S22: Pick-up flip head movement) The control device 7 moves the pickup flip head 21 from the pickup position to the reverse position.

(Step S23: Pick up flip head reverses) The control device 7 rotates the pickup head 21 by 180 degrees, inverts the bump surfaces (surfaces) of the die D so as to face downward, and takes the die D into a posture of handing over the die D to the transfer head 81 . The substrate reference die RD1 , RD2 and the block reference die BRD are also inverted by the pick-up flip chip head 21 in the same manner as the die D.

(step S24: transfer header handover) The control device 7 picks up the die D from the chuck 22 of the pickup flip-chip head 21 through the chuck 82 of the transfer head 81, and transfers the die D. The substrate reference die RD1, RD2 and the block reference die BRD are also handed over similarly to the die D.

(Step S25: Pickup Flip Head Reverse) The control device 7 reverses the pick-up flip-chip head 21 and orients the suction surface of the chuck 22 downward.

(Step S26: the transfer head moves) Before or in parallel with step S25 , the control device 7 moves the transfer head 81 to the intermediate stage 31 .

(Step S27: Die placement on the intermediate platform) The control device 7 places the die D held by the transfer head 81 on the intermediate stage 31 . The substrate reference die RD1, RD2 and the block reference die BRD are also mounted on the intermediate stage similarly to the die D.

(Step S28: the transfer head moves) The control device 7 moves the transfer head 81 to the delivery position of the die D (substrate reference die RD1, RD2, block reference die BRD).

(Step S29: Move the position of the intermediate platform) After step S28 or in parallel, the control device 7 moves the intermediate stage 31 to the handover position with the bonding head 41 .

(Step S2A: Bonding head handover) The control device 7 picks up the die D from the intermediate stage 31 by the chuck of the bonding head 41, and transfers the die D. The substrate reference die RD1, RD2 and the block reference die BRD are also handed over similarly to the die D.

(Step S2B: Move the position of the intermediate platform) The control device 7 moves the intermediate stage 31 to the delivery position with the transfer head 81 .

(Step S2C: Bonding Head Movement) The control device 7 moves the die D held by the chuck 42 of the bonding head 41 onto the substrate P. As shown in FIG.

(Step S2D: gluing) The control device 7 adheres the die D (substrate reference die RD1, RD2, block reference die BRD) picked up by the chuck 42 of the bonding head 41 from the intermediate stage 31 to the main agent (adhesion) coated with adhesiveness. layer) on the substrate P. More specifically, the control device 7 adheres the substrate reference dies RD1 and RD2 on the substrate P by step S1, adheres the block reference die BRD on the substrate P by step S2, and adheres the block reference die BRD on the substrate P by step S3. to bond the die D on the substrate P.

(Step S2E: Bonding Head Movement) The control device 7 moves the bonding head 41 to the handover position with the intermediate stage 31 .

And after step S2E, the control apparatus 7 removes the board|substrate P to which the board|substrate reference die RD1, RD2, the block reference die BRD, and the die D were joined from the conveyance rails 51 and 52 in the board|substrate carrying part 6H. The substrate P is unloaded from the flip chip bonder 10 .

Then, a plurality of die (semiconductor wafers) arranged on the adhesive layer of the substrate P are encapsulated together with a sealing resin to form a sealing body including the plurality of semiconductor wafers and the sealing resin covering the plurality of semiconductor wafers, and then The sealing body peels off the substrate P, and next, a rewiring layer is formed on the surface of the sealing body to which the substrate P is attached to manufacture FOPLP.

As mentioned above, although the invention developed by the inventors has been specifically described based on the embodiments, modifications, and examples, the present invention is not limited to the above-mentioned embodiments, modifications, and examples, and various modifications are of course possible.

For example, in the embodiment, the pickup unit 2 , the transfer unit 8 , the intermediate platform unit 3 and the joining unit 4 are described as one example, but the pickup unit 2 , the transport unit 8 , the intermediate platform unit 3 and the joining unit 4 may be separate for the second group.

Furthermore, in the embodiment, the example in which the Y beam 43 is provided with one bonding head 41 has been described, but a plurality of bonding heads may be provided.

Furthermore, in the embodiment, the flip-chip bonder has been described, but it is also applicable to a die bonder that does not invert the dies picked up from the die supply unit for bonding.

BH: Joint Head BD: Die Bonding Device CM: camera CNT: control device MM: memory device D: grain RD1: Substrate reference die (first die) RD2: Substrate reference die (second die) BRD: block reference die (third die) P: substrate 10: Flip chip bonder (die bonder) 41: Splice head 43: Y beam (drive part) 44: Substrate recognition camera (camera device) 7: Control device

FIG. 1 is a diagram showing the outline of a die bonding apparatus. 2 is a top view showing a substrate to which a substrate reference die of a comparative example is bonded. [ Fig. 3] Fig. 3 is a top view showing a substrate to which a plurality of dies are bonded with the substrate reference die of Fig. 2 as a reference position. [ Fig. 4] Fig. 4 is a flowchart showing a bonding method according to the embodiment. [ Fig. 5] Fig. 5 is a top view showing a substrate to which the reference die according to the embodiment is bonded. [ Fig. 6] Fig. 6 is a top view showing a substrate to which block reference die is bonded with the substrate reference die of Fig. 5 as a reference position. [ Fig. 7] Fig. 7 is a top view showing a substrate to which die is bonded using the substrate reference die and the block reference die of Fig. 6 as reference positions. [ Fig. 8] Fig. 8 is a top view showing a substrate to which all the die in the first block are bonded. [ Fig. 9] Fig. 9 is a diagram illustrating a bonding method of a first modification. [ Fig. 10] Fig. 10 is a diagram illustrating a bonding method of a second modification. 11 is a top view showing a substrate to which the substrate reference die and the block reference die of the fourth modification are bonded. 12 is a top view showing a substrate in which die is bonded using the substrate reference die and the block reference die of the fifth modification as reference positions. 13 is a top view showing the outline of the flip chip bonder of the embodiment. [ Fig. 14] Fig. 14 is a diagram illustrating the operation of picking up the flip-chip head, the transfer head, and the bonding head when viewed from the direction of arrow A in Fig. 13 . [ Fig. 15] Fig. 15 is a schematic cross-sectional view showing a main part of the crystal grain supply unit of Fig. 13 . 16 is a flowchart showing a bonding method performed by the flip chip bonder of FIG. 13 . [ Fig. 17 ] A top view of a substrate to which the die-bonded die is based on the substrate reference die and the block reference die of the sixth modification as reference positions.

BL11, BL12, BL13, BL21, BL22, BL23, BL31, BL32, BL33: Blocks

BRD01,BRD02,BRD03,BRD10,BRD11,BRD12,BRD13,BRD20,BRD21,BRD22,BRD23,BRD30,BRD31,BRD32: Block reference die

P: substrate

RD1: Substrate reference die (first die)

RD2: Substrate reference die (second die)

(X0,Yn): intersection

(Xn,Y0): intersection

(X0,Y0): position

(Xn,Yn): position

Claims (19)

A die bonding apparatus, which is characterized by comprising: a bonding head for placing picked-up die on the upper surface of a substrate having a plurality of regions; a driving unit for moving the bonding head; a camera for capturing the die; and a control The control device for the drive unit and the imaging device, wherein the control device is configured to bond a first die and a second die on the substrate, and use the first die and the second die as a reference to bond a first die and a second die. Three dies, the dies are bonded with the first die or the second die and the third die as a reference. The die bonding apparatus of claim 1, wherein the control device is configured to: (a) use the bonding head to bond the first die on the first place of the substrate, (b) use the bonding head, With respect to the central portion of the substrate, the second die is bonded at a second place opposite to the first place, (c) using the imaging device to measure the positions of the first die and the second die , save the position, (d) using the bonding head, with the first die and the second die as a reference, each of the plurality of regions is bonded to form the third die as a reference, (e) using the imaging device to measure the position of the third die, and storing the position, (f) using the imaging device to measure the position of the first die or the second die and the third die, (g) According to the measured positions of the stored first die or the second die and the third die and the stored first die or the second die and the third die The bonding position is corrected by the difference in the position of the bonding head, and (h) the bonding head is used to bond the die in the region. The die bonding device of claim 2, wherein the substrate, in plan view, has a first side, a second side intersecting with the first side, and a first side intersecting with the second side and facing the first side. The three sides and the fourth side intersecting the third side and facing the second side form a rectangular shape, each of the plurality of regions is regarded as a rectangular shape in plane, and the control device is configured such that: Among the plurality of areas, the first die is bonded to the first area closest to the first corner formed by the first side and the second side, and the third side and the fourth side are closest to the first area. The second area of the second corner formed by the edge is bonded to the second die. The die bonding apparatus according to claim 3, wherein the control device is configured to measure the position of (f) every time the die is bonded. The die bonding device of claim 3, wherein the aforementioned control The apparatus is configured to measure the position of the above-mentioned (f) once for each of the above-mentioned regions. The die bonding apparatus according to claim 3, wherein the control device is configured to measure the position of (f) once per row of the area. The die bonding apparatus according to claim 3, wherein the control device is configured to measure the position of the above (f) once every interval set by the bonding elapsed number or the elapsed time. The die bonding apparatus of claim 3, wherein the control device is configured to not bond the third die in the first region and the second region. The die bonding apparatus according to any one of claims 1 to 8, further comprising: a die supply unit; and a pickup head that picks up die from the die supply unit and inverts up and down, and the bonding head is a The said die is picked up from the said pick-up head, and the said die is mounted on the upper surface of the said board|substrate with the circuit formation surface of the said die facing down. The die bonding apparatus according to claim 9, further comprising: an intermediate stage on which the die picked up by the pick-up head is placed, wherein the bonding head picks up the die from the intermediate stage, and attaches the circuit forming surface of the die to the surface. The die is placed on the upper surface of the substrate so as to face upward. The die bonding apparatus according to claim 10, wherein two sets of the pickup head, the intermediate platform, and the drive unit are respectively provided. A method of manufacturing a semiconductor device, comprising: (a) a process of carrying in a wafer ring holding a dicing tape having dies; (b) a process of carrying in a substrate having a plurality of regions; The process of picking up the die by the wafer ring, and placing the picked die on the substrate, the process (c) is: bonding the first die and the second die on the substrate, so that the first die and the second die as a reference, the third die is bonded, and the first die or the second die and the third die are used as a reference, the die is bonded. The method for manufacturing a semiconductor device according to claim 12, wherein the step (c) comprises: (c1) a step of bonding the first die at the first position of the substrate; (c2) relative to the center of the substrate part, the process of bonding the second die at the second place opposite to the first place; (c3) the process of measuring the positions of the first die and the second die, and saving the position; (c4) ) The process of bonding each of the plurality of regions into the third die based on the first die and the second die; (c5) The process of measuring the position of the third die and saving the position ; (c6) The process of measuring the positions of the first die or the second die and the third die; (c7) Based on the measured first die or the second die and the third die The process of correcting the bonding position by the difference between the positions of the three dies and the stored positions of the first die or the second die and the third die; (c8) the process of bonding dies in the aforementioned area. The method for manufacturing a semiconductor device according to claim 13, wherein the step (c6) is performed every time the bonding of the die in the step (c8) is performed. The method for manufacturing a semiconductor device according to claim 13, wherein the process (c6) is performed once per the region. The method for manufacturing a semiconductor device according to claim 13, wherein the process (c6) is performed once per row of the region. The method for manufacturing a semiconductor device according to claim 13, wherein the process (c6) is performed once every time interval set by the number of bonding elapsed objects or the elapsed time. The method for manufacturing a semiconductor device according to claim 13, wherein the process (c) further comprises a process of inverting the picked up die up and down, and the process (d) is to pick up the inverted die, The circuit formation surface of the said die is mounted on the said board|substrate so that it may face down. As claimed in claim 13, the manufacturing method of a semiconductor device, Among them, the process (c) further includes a process of placing the picked-up die on the intermediate platform, and the process (d) is to pick up the die from the intermediate platform, and place the circuit formation surface of the die facing up. And mounted on the said board|substrate.

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