TW202245305A - Bonding device and method of manufacturing solid-state imaging device including a syringe, a bonding head, and a control unit - Google Patents

Abstract

To provide a technology that can imitate the inclination of a semiconductor wafer on a workpiece. A bonding device includes: a syringe for applying a paste adhesive to a semiconductor wafer mounted on a substrate; a bonding head having a collet that absorbs a workpiece at its front end, and placing the workpiece on the paste adhesive applied by the syringe; and a control unit configured to release the adsorption of the workpiece by the collet at a position where the distance between the highest position of the paste adhesive applied on the semiconductor wafer and the workpiece is within a predetermined range, so that the workpiece is dropped onto the paste adhesive.

Description

Bonding device and method of manufacturing solid-state imaging device

The present disclosure relates to a bonding device, and is applicable, for example, to a bonding device for bonding a workpiece to a semiconductor wafer.

A bonding device is a device that "bonds (places and adheres) a semiconductor chip or the like on a substrate such as a wiring board or a lead frame or on a bonded semiconductor chip using a resin paste or the like as a bonding material." The bonding device is, for example, repeatedly performing "using a suction nozzle called a collet mounted on the front end of the bonding head to suction and pick up a semiconductor wafer, etc. from a semiconductor wafer, etc., and placing it on a predetermined position on the substrate and giving it a pressure, thereby performing actions (operations) such as "joining".

A solid-state imaging device is composed of, for example, a semiconductor chip on which an image sensor, a microlens, etc. are formed, a wiring board on which the semiconductor chip is placed, and a cover glass that protects the semiconductor chip. In the case of color imaging, a color filter is formed between the image sensor and the microlens. A semiconductor wafer also has a laminated structure formed by bonding a plurality of semiconductor substrates. The semiconductor wafer and the cover glass are adhered by an adhesive formed on the outer periphery. Here, the image sensor is composed of CCD (Charge Coupled Device) or CMOS (Complementary Metal Oxide Semiconductor). As the cover glass, for example, a functional glass "with various functional layers provided according to applications such as AR (anti-reflection), IR (infrared) cutoff, and gas barrier" may be used. [Prior Art Literature] [Patent Document]

[Patent Document 1] Japanese Patent Laid-Open No. 2016-12695

[Problems to be Solved by the Invention]

For example, in the manufacture of a solid-state imaging device, a paste-like adhesive is applied to a semiconductor wafer placed on a wiring board (substrate), and a workpiece such as cover glass (glass wafer) is bonded thereon. When the semiconductor wafer is mounted on the substrate at an inclination due to the warpage of the substrate or the unevenness of the adhesive bonding the semiconductor wafer and the substrate, it is sometimes necessary to maintain the inclination of the placed workpiece in a manner similar to the semiconductor wafer. However, since the bonding head holds the workpiece horizontally, when the bonding head places the workpiece on the adhesive paste, the workpiece is partially pressed into the adhesive paste. Therefore, the workpiece sometimes cannot imitate the inclination of the semiconductor wafer.

The subject of this disclosure is to provide a technology that can imitate the tilt of a workpiece on a semiconductor wafer. Other issues and novel features can be clearly understood from the description in this specification and the attached drawings. [Means to solve the problem]

It is as follows to briefly describe the outline of representative ones in this disclosure. That is, the bonding apparatus is provided with: a syringe for applying a paste-like adhesive to a semiconductor wafer mounted on a substrate; on the paste adhesive applied by the syringe; and the control unit is configured so that the distance between the highest position of the paste adhesive applied on the semiconductor wafer and the workpiece is within a predetermined range. At the position, the adsorption of the workpiece by the collet is released, and the workpiece is dropped onto the paste adhesive. [Effect of Invention]

According to the bonding apparatus described above, the workpiece can imitate the inclination of the semiconductor wafer.

Hereinafter, the embodiment will be described using the drawings. However, in the following description, the same components may be given the same symbols and overlapping descriptions may be omitted. In addition, in order to clarify the description, the drawings sometimes schematically show the width, thickness, shape, etc. of each part compared with the actual form, but this is just an example and does not limit the interpretation of the present disclosure.

The configuration of the bonding apparatus in the embodiment will be described using FIGS. 1 to 4 . Fig. 1 is a schematic top view showing a joining device in the embodiment. Fig. 2 is a schematic cross-sectional view showing the wafer supply unit shown in Fig. 1 . Fig. 3 is a schematic side view showing the preforming part shown in Fig. 1 . FIG. 4 is a schematic side view showing a wafer supply unit and a bonding unit shown in FIG. 1 .

As shown in FIG. 1, the bonding apparatus 10 roughly includes: a wafer supply unit 1 for supplying a workpiece DG mounted on a substrate S; a preforming unit 9; a bonding unit 4; a transport unit 5; a substrate supply unit 6; 7; and the control unit 8, which monitors and controls the actions of each unit. The Y-axis direction is the front-rear direction of the joining device 10 , and the X-axis direction is the left-right direction. The wafer supply unit 1 is arranged on the front side of the bonding apparatus 10 , and the bonding unit 4 is arranged on the rear side. Here, on the substrate S, the semiconductor chip D is mounted on a plurality of product regions that will eventually become one package.

As shown in FIG. 2 , the wafer supply unit 1 includes: a wafer holding table 12 for holding the wafer 11 ; and a lifting unit 13 for lifting the workpiece DG from the wafer 11 . Here, the workpiece DG is, for example, a glass wafer. The wafer 11 is a disk-shaped glass plate on which a dicing tape 16 is attached, and is diced to be divided into a plurality of glass wafers. The wafer holding table 12 has: an expansion ring 15 holding the wafer ring 14; and a support ring 17 held on the wafer ring 14 and horizontally positioning the dicing tape 16 followed by a plurality of workpieces DG. The top unit 13 is disposed inside the support ring 17 . The control unit 8 moves the wafer holding table 12 in the X-axis direction and the Y-axis direction by a driving means not shown, and moves the picked workpiece DG to the position of the top unit 13 (pick-up position).

When the wafer holding table 12 is lifted on the workpiece DG, the extension ring 15 holding the wafer ring 14 is lowered. As a result, the dicing tape 16 held by the wafer ring 14 is elongated and the distance between the workpieces DG is enlarged. The lifting unit 13 lifts the workpiece DG up from below the workpiece DG, thereby improving the pick-up performance of the workpiece DG.

As shown in Figure 3, the preforming part 9 has: a syringe 91; a drive unit (not shown) that moves the syringe 91 along the X-axis direction, the Y-axis direction and the up-down direction; and a preforming camera as an imaging device. 94. Grasp the coating position of the syringe 91 and the like. The preforming unit 9 applies the paste adhesive PA to the semiconductor wafer D mounted on the substrate S transported by the transport unit 5 using the syringe 91 . The syringe 91 seals a paste adhesive inside, and is configured to push and apply the paste adhesive PA from the front end of the nozzle 92 to the semiconductor wafer D mounted on the substrate S by air pressure.

As shown in FIG. 4, the joint part 4 is provided with: a joint head 41, equipped with a collet 42 for sucking and holding the workpiece DG at the front end; a Y driving part (not shown), which moves the joint head 41 in the Y-axis direction ; and the substrate recognition camera 44, which photographs the position recognition mark (not shown) of the substrate S, and recognizes the bonding position. The bonding unit 4 picks up the workpiece DG from the wafer supply unit 1 and bonds it to the semiconductor wafer D coated with the paste-like adhesive PA of the transported substrate S. At this time, the bonding head 41 corrects the pick-up position and posture based on the image data of the wafer recognition camera 24, picks up the workpiece DG from the wafer 11, and bonds the workpiece DG to the substrate mounted on the basis of the image data of the substrate recognition camera 44. on the semiconductor wafer D.

As shown in FIG. 1, the conveyance part 5 has the conveyance lane 52 as a conveyance path which the board|substrate S moves. With such a configuration, the substrate S is moved from the substrate supply unit 6 to the coating position along the transport path 52, moved to the joining position after coating, and moved to the substrate carrying out unit 7 after joining, and the substrate S is Received and delivered to the substrate carry-out unit 7 .

The control unit 8 is provided with: a memory storing a program (software) for monitoring and controlling the operations of the above-mentioned parts of the bonding device 10; and a central processing unit (CPU) for executing the program stored in the memory. .

Next, a method of manufacturing a solid-state imaging device using the bonding device in the embodiment will be described using FIG. 5 . FIG. 5 is a flowchart showing a method of manufacturing a solid-state imaging device using the bonding device shown in FIG. 1 .

(Step S11: Wafer and substrate loading process) A wafer cassette (not shown) storing a wafer ring holding a dicing tape 16 to which the workpiece DG divided from the wafer 11 is attached is carried into the bonding device 10 . The control unit 8 supplies the wafer ring 14 to the wafer supply unit 1 from a cassette storing the wafer ring 14 . Moreover, the board|substrate S on which the semiconductor wafer D was mounted is prepared, and it carries in to the board|substrate supply part of the bonding apparatus 10.

(Step S12: Preforming process) The control part 8 acquires the image of the surface of the semiconductor wafer D mounted on the board|substrate S before coating by the preforming camera 94, and confirms the surface to which paste adhesive PA should be coated. If there is no problem with the surface to be coated, the control unit 8 applies the paste adhesive PA from the syringe 91 to the semiconductor wafer D mounted on the substrate S transported by the transport unit 5 . Paste adhesive PA is, for example, a UV curing adhesive. The control unit 8 reconfirms with the preforming camera 94 whether the adhesive paste PA is applied correctly after application, and inspects the applied adhesive paste PA. If there is no problem with coating, the control unit 8 transports the substrate S to the bonding table 45 through the transport unit 5 .

(Step S13: Joining process) The control unit 8 moves the wafer 11 in such a way that the desired workpiece DG can be picked up from the wafer 11 by the wafer holder 12, and performs positioning based on the data captured by the wafer recognition camera 24. and surface inspection. The control unit 8 calculates the amount of deviation (X, Y, and θ directions) of the workpiece DG on the wafer holding table 12 from the workpiece position reference point of the bonding device 10 by image processing. In addition, as the workpiece position reference point, the predetermined position of the wafer holding table 12 is held in advance as the initial setting of the device. And the control part 8 performs the surface inspection of the workpiece|work DG by image processing.

In addition, the control unit 8 images the substrate S placed on the bonding table 45 by the substrate recognition camera 44 . The control unit 8 calculates the amount of deviation (X, Y, and θ directions) of the substrate S from the substrate position reference point of the bonding apparatus 10 by image processing. In addition, as the reference point of the substrate position, the predetermined position of the bonding part 4 is held in advance as the initial setting of the device.

Furthermore, the control unit 8 moves and lowers the bonding head 41 parallel to and directly above the workpiece DG to be picked up, corrects the suction position of the bonding head 41 from the calculated deviation of the workpiece DG, and vacuum-suctions the bonding head 41 with the collet 42. Workpiece DG. The control unit 8 raises, moves horizontally, and lowers the bonding head 41 that has sucked the workpiece DG from the wafer 11 , and bonds the workpiece DG to a predetermined position of the semiconductor wafer D on the substrate S mounted on the bonding stage 45 . Furthermore, the control unit 8 checks whether or not the workpiece DG is bonded at a desired position based on the image data captured by the substrate recognition camera 44 .

(Step S14: Substrate unloading process) The control unit 8 transports the substrate S to which the workpiece DG is bonded to the substrate carry-out unit 7 . The control unit 8 takes out the substrate S to which the workpiece DG has been joined from the substrate carry-out unit 7 . The substrate S is carried out from the bonding apparatus 10 .

Next, in order to clarify this embodiment, the structure and manufacturing method of the solid-state imaging device manufactured by the bonding apparatus in this embodiment will be described using FIG. 6 and FIG. 7 . FIG. 6 is a schematic diagram showing a solid-state imaging device manufactured by the bonding apparatus shown in FIG. 1, FIG. 6(a) is a top view, and FIG. 6(b) is a side view. Fig. 7 is a diagram for explaining the manufacturing method of the solid-state imaging device shown in Fig. 6, Fig. 7(a) is a side view showing the state before the workpiece is placed, and Fig. 7(b) is a side view showing the state after the workpiece is placed State side view.

As shown in FIG. 6( b ), the solid-state imaging device is constructed by sequentially laminating a semiconductor wafer D, a paste adhesive PA, and a workpiece DG on a substrate S. As shown in FIG. As shown in FIG. 6( a ), the substrate S, the semiconductor wafer D, and the workpiece DG each have a rectangular shape in plan view. The substrate S, the semiconductor wafer D, and the workpiece DG become smaller in order. In addition, the paste adhesive PA is annular in plan view, and its size is equal to or smaller than that of the workpiece DG. The thickness of the workpiece DG is, for example, about 400 μm, and the height of the paste adhesive is, for example, about 125 μm.

The semiconductor wafer D is mounted on the substrate S in advance, and the paste adhesive PA is applied on the semiconductor wafer D in the preform part 9 . And the bonding head 41 suction-holds the work DG by the collet 42, and conveys it directly above the semiconductor wafer to which the paste adhesive PA was apply|coated. At this time, the collet 42 of the bonding head 41 holding the workpiece DG and performing bonding is normally positioned horizontally as shown in FIG. 7( a ). In this state, as shown in FIG. 7( b ), the workpiece DG is pressed into a predetermined position and joined. Ideally, the distance (height of the paste adhesive PA) between the bonded semiconductor wafer D and the workpiece DG becomes uniform (KA=KB).

Next, using FIG. 8 , the problems in the case of bonding the workpiece DG to the semiconductor wafer D mounted obliquely on the substrate S will be described. Fig. 8 is a diagram for explaining problems of the manufacturing method of the solid-state imaging device shown in Fig. 6, Fig. 8(a) is a side view showing the state before the workpiece is placed, and Fig. 8(b) is a side view showing the A side view of the state of the workpiece.

As shown in FIG. 8(a), when the semiconductor wafer D mounted on the substrate S is tilted relative to the upper surface of the substrate S, as shown in FIG. 8(b), since the workpiece DG is directly pressed horizontally Therefore, with the horizontal bonding platform 45 as a reference, the higher part of the semiconductor wafer D (the left side of the figure) is the narrow distance (KA) between the semiconductor wafer D and the workpiece DG, and the lower part of the semiconductor wafer D (the left side of the figure) is narrow. On the right side), the gap (KB) between the semiconductor wafer D and the workpiece DG is wide, resulting in unevenness (KA<KB).

A method of manufacturing the solid-state imaging device of the present embodiment that solves the above-mentioned problems will be described using FIG. 9 . Fig. 9 is a diagram for explaining the manufacturing method in the embodiment of the solid-state imaging device shown in Fig. 6, Fig. 9(a) is a side view showing the state before the workpiece is dropped, and Fig. 9(b) is a diagram showing the workpiece The side view of the state immediately after dropping, Fig. 9(c), is a side view showing the state in which the workpiece is placed.

As shown in FIG. 9(a), the control unit 8 is separated by a predetermined distance (Ha) from the highest height of the workpiece DG held by the collet 42 and the paste adhesive PA applied on the semiconductor wafer D. position, the lowering action of the bonding head 41 is stopped. Then, as shown in FIG. 9( b ), the control unit 8 releases the suction of the workpiece DG by the collet 42 to drop it, and places the workpiece DG on the semiconductor wafer D. As shown in FIG. 9( c ), when the coating height of the paste adhesive PA is uniform, the distance between the semiconductor wafer D and the workpiece DG becomes uniform (KA=KB). In addition, when the suction of the workpiece DG by the collet 42 is released, the lowering operation of the bonding head 41 may not be stopped, and for example, the bonding head 41 may be stopped after the suction of the workpiece DG by the collet 42 is released. the descending action.

Here, the predetermined interval (Ha) refers to a height at which the paste adhesive PA does not press in due to the drop of the workpiece DG, and is preferably not less than 0 μm and not more than 50 μm. Also, considering the variations in the heights of the paste adhesive PA, the semiconductor wafer D, and the substrate S, the height (H) at which the collet 42 releases the workpiece DG is always set such that the predetermined interval (Ha) is 0 μm or more and 50 μm or less. Location. That is, in the present embodiment, the measurement of the height (Hb) of the paste adhesive PA is not performed every time the workpiece DG is placed. Here, the height (H) means, for example, the height from the upper surface of the bonding platform 45 to the lower surface of the workpiece DG.

According to this embodiment, the workpiece DG is not pressed into the paste adhesive PA by the collet 42 of the bonding head 41 . Thereby, the workpiece DG can be made to resemble the paste adhesive PA. Therefore, when the paste adhesive PA is applied to a uniform height, even if the semiconductor wafer D is inclined, the workpiece DG can be mounted on the semiconductor wafer D in parallel.

Moreover, according to the present embodiment, when the semiconductor wafer D is tilted, the workpiece DG is placed in a state where "the coated surface of the paste adhesive PA including the semiconductor wafer D is not parallel to the mounted workpiece DG". It is placed on the semiconductor wafer D by pouring. Thereby, it is possible to mount while exhausting the air inside the paste adhesive PA applied in a ring shape, and the external expansion of the paste adhesive PA can be suppressed.

＜Modifications＞ Hereinafter, some typical modifications related to the embodiment will be illustrated. In the following description of the modified examples, the same symbols as those in the above-mentioned embodiment are used for parts having the same configuration and function as those described in the above-mentioned embodiment. In addition, regarding the description of this part, the description of the above-mentioned embodiment can be appropriately cited within the range that does not conflict technically. In addition, all or part of a part of the above-mentioned embodiments and a plurality of modified examples may be appropriately combined and applied within a range that is not technically contradictory.

(first modified example) FIG. 10, which explains the method of manufacturing the solid-state imaging device in the first modified example using FIG. 10, is a diagram illustrating the manufacturing method in the first modified example of the solid-state imaging device shown in FIG. 10(b) is a side view showing the state before the workpiece is dropped, and FIG. 10(c) is a side view showing the state where the workpiece is placed.

In the embodiment, before continuous operation, the height (Hb) of the paste adhesive PA applied to the semiconductor wafer D (including the deviation of the paste adhesive PA, the semiconductor wafer D, and the substrate S) is evaluated in advance. The height (H) at which the clamp 42 releases the workpiece DG is always set at a position that becomes a predetermined interval (Ha). In this modified example, during continuous operation, after the paste adhesive PA is applied, for each substrate, each column, or each time of application, by using the distance of a sensor or an optical camera, etc. Meter 46 measures the height (Hb) from the top of the preforming platform 95 or the joining platform 45 to the highest paste adhesive PA, and sets the height at which the collet 42 releases the workpiece DG to a position such as Hb.

As shown in FIG. 10( a ), the semiconductor wafer D is tilted with respect to the substrate S. As shown in FIG. Moreover, the coating height of the paste adhesive PA is uniform. In this case, the portion where the paste adhesive PA has a higher height than other portions in the ring-shaped paste adhesive PA application area refers to the semiconductor wafer D placed on the substrate S. the highest side.

As shown in FIG. 10( b ), the control unit 8 is such that the workpiece DG held by the collet 42 becomes the same height as the highest height (Hb) of the paste adhesive PA applied on the semiconductor wafer D. position, the lowering action of the bonding head 41 is stopped. At this time, the distance (KA) between the semiconductor wafer D and the workpiece DG at the highest position of the paste adhesive PA is smaller than the distance (KB) between the semiconductor wafer D and the workpiece DG at the lowest position of the paste adhesive PA ( KA<KB). Then, when the controller 8 releases the suction of the workpiece DG by the collet 42 and drops the workpiece DG, the workpiece DG is placed on the semiconductor wafer D as shown in FIG. 10( c ). At this time, the distance between the semiconductor wafer D and the workpiece DG becomes uniform (KA=KB).

In this modified example, the workpiece DG is released from the collet 42 at the height (H=Hb, Ha=0) of the highest portion of the workpiece DG in contact with the paste adhesive PA. That is, when the workpiece DG contacts the paste adhesive PA (momentarily), the workpiece DG is released from the collet 42 . Thereby, when the workpiece DG is released from the collet 42, since the workpiece DG is in contact with one side of the annular paste adhesive PA, it is possible to suppress the workpiece DG from being deviated and falling. That is, the position deviation of the workpiece DG when the workpiece DG is dropped can be suppressed. In addition, the θ deviation of the workpiece DG when the workpiece DG is dropped can be suppressed.

(second modified example) A method of manufacturing the solid-state imaging device in the second modified example will be described using FIGS. 11 to 13 . Fig. 11 is a diagram illustrating a solid-state imaging device after applying a paste adhesive in a second modified example. Fig. 11(a) is a top view of the main part of the solid-state imaging device, and Fig. 11(b) is a top view of the main part of the solid-state imaging device. A side view before placing a workpiece on the solid-state imaging device shown in FIG. 11( a ). FIG. 12 is a diagram for explaining a method of manufacturing a solid-state imaging device in a second modified example in which the semiconductor wafer is mounted without inclination with respect to the substrate. FIG. As a side view, Fig. 12(b) is a side view showing the state before the workpiece is dropped, and Fig. 12(c) is a side view showing the state in which the workpiece is placed. FIG. 13 is a diagram for explaining a method of manufacturing a solid-state imaging device in a second modified example in which the semiconductor wafer is mounted obliquely with respect to the substrate, and FIG. 13( a ) is a side view showing a state in which the collet is in a lowering operation. 13( b ) is a side view showing the state before the workpiece is dropped, and FIG. 13( c ) is a side view showing the state where the workpiece is placed.

In the embodiment and the first modified example, although the coating height of the paste adhesive PA becomes uniform, in the second modified example, as shown in FIG. The coating height of the pasty adhesive PA is higher than the protruding part PAa. As shown in FIG. 11( a ), the protruding portion PAa is the start point and the end point of application of the annular paste adhesive PA. The protruding portion PAa may also be formed by "changing the discharge amount per unit time of the nozzle 92 provided in the syringe 91 or slowing down the operation of the nozzle". The protruding portion PAa is circular in plan view, and its size is about the same as the width of the annular paste adhesive PA to be applied.

As shown in FIG. 12( a ), the semiconductor wafer D is mounted with respect to the substrate S without being inclined. In this case, the part where the height of the paste adhesive PA is the highest is the protruding part PAa compared with other parts in the application region of the ring-shaped paste adhesive PA.

As shown in FIG. 12( b ), the control unit 8 is such that the workpiece DG held by the collet 42 becomes the same height as the highest height (Hb) of the paste adhesive PA applied on the semiconductor wafer D. position, the lowering action of the bonding head 41 is stopped. At this time, the distance (A) between the semiconductor wafer D and the workpiece DG at the protruding portion PAa is the same as the distance (B) between the semiconductor wafer D and the workpiece DG at other positions of the protruding portion PAa of the paste adhesive PA (KA = KB). Then, when the control unit 8 releases the suction of the workpiece DG by the collet 42 and drops the workpiece DG, the workpiece DG is placed on the semiconductor wafer D as shown in FIG. 12( c ). At this time, the protruding portion PAa is flattened by the load of the workpiece DG, and the distance between the semiconductor wafer D and the workpiece DG becomes uniform (KA=KB).

As shown in FIG. 13( a ), the semiconductor wafer D is tilted with respect to the substrate S. As shown in FIG. In this case, the portion where the height of the paste adhesive PA is higher than other portions in the application region of the ring-shaped paste adhesive PA is the protruding portion PAa. Here, the protruding portion PAa is higher than the height of the upper surface of the paste adhesive PA on the highest side of the semiconductor wafer D when the semiconductor wafer D is mounted obliquely with respect to the substrate S.

As shown in FIG. 13( b ), the control unit 8 is such that the workpiece DG held by the collet 42 becomes the same height as the highest height (Hb) of the paste adhesive PA applied on the semiconductor wafer D. position, the control unit 8 stops the lowering operation of the bonding head 41 . At this time, the distance (KA) between the semiconductor wafer D and the workpiece DG at the protruding portion PAa is larger than the distance (KB) between the semiconductor wafer D and the workpiece DG at the highest side of the semiconductor wafer D (KA>KB). Then, when the controller 8 releases the suction of the workpiece DG by the collet and drops the workpiece DG, the workpiece DG is placed on the semiconductor wafer D as shown in FIG. 13( c ). At this time, the protruding portion PAa is flattened by the load of the workpiece DG, and the distance between the semiconductor wafer D and the workpiece DG becomes uniform (KA=KB).

In this modified example, the workpiece DG is released from the collet 42 at the height (H=Hb, Ha=0) at which the workpiece DG contacts the protruding portion PAa of the paste adhesive PA. That is, the workpiece DG is released from the collet 42 when the workpiece DG contacts the protruding portion PAa (momentarily). Thereby, when the workpiece DG is released from the collet 42, it is possible to suppress the workpiece DG from shifting and falling. That is, the position deviation of the workpiece DG when the workpiece DG is dropped can be suppressed.

(third modified example) Using FIGS. 14 to 16 , a method of manufacturing the solid-state imaging device in the third modified example will be described. Fig. 14 is a diagram illustrating a solid-state imaging device after applying a paste adhesive in a third modified example, Fig. 14(a) is a top view of the main part of the solid-state imaging device, and Fig. 14(b) is A side view before placing a workpiece on the solid-state imaging device shown in FIG. 14( a ). FIG. 15 is a diagram for explaining a method of manufacturing a solid-state imaging device in a third modified example in which the semiconductor wafer is mounted without inclination with respect to the substrate. FIG. As a side view, Fig. 15(b) is a side view showing the state before the workpiece is dropped, and Fig. 15(c) is a side view showing the state where the workpiece is placed. Fig. 16 is a diagram for explaining a method of manufacturing a solid-state imaging device in a third modified example in which a semiconductor wafer is mounted obliquely with respect to a substrate, and Fig. 16(a) is a side view showing a state in which the collet is in a lowering operation. 16( b ) is a side view showing the state before the workpiece is dropped, and FIG. 16( c ) is a side view showing the state in which the workpiece is placed.

In the second modified example, one protruding portion PAa is provided on the annular paste adhesive PA, but in the third modified example, as shown in FIG. Two protrusions PAa, PAb. Like the second modified example, the protrusions PAa, PAb are the application start point and end point of the ring-shaped paste adhesive PA. The protrusions PAa and PAb can also be formed by "changing the discharge amount per unit time of the nozzle 92 provided in the syringe 91 or slowing down the nozzle moving speed".

As shown in FIG. 15( a ), the semiconductor wafer D is mounted with respect to the substrate S without being inclined. In this case, the portions where the paste adhesive PA has the highest height are the protruding portions PAa and PAb compared with other portions in the application region of the ring-shaped paste adhesive PA.

As shown in FIG. 15(b), the control unit 8 is such that the workpiece DG held by the collet 42 becomes the same height (Hb) as the highest height (Hb) of the paste adhesive PA applied on the semiconductor wafer D. position, the lowering action of the bonding head 41 is stopped. At this time, the distance (KA) between the semiconductor wafer D at the protruding portion PAa and the workpiece DG is the same as the distance (KB) between the semiconductor wafer D and the workpiece DG at the protruding portion PAb (KA=KB). Then, when the controller 8 releases the suction of the workpiece DG by the collet 42 and drops the workpiece DG, the workpiece DG is placed on the semiconductor wafer D as shown in FIG. 15( c ). At this time, the protrusions PAa and PAb are flattened by the load of the workpiece DG, and the distance between the semiconductor wafer D and the workpiece DG becomes uniform (KA=KB).

As shown in FIG. 16( a ), the semiconductor wafer D is tilted with respect to the substrate S. As shown in FIG. In this case, the portion where the height of the paste adhesive PA is higher than other portions in the application region of the ring-shaped paste adhesive PA is the protruding portion PAb. Here, the protruding portion PAa is lower in height than the protruding portion PAb at the highest side of the semiconductor wafer D when the semiconductor wafer D is mounted obliquely with respect to the substrate S. FIG.

As shown in FIG. 16( b ), the control unit 8 is such that the workpiece DG held by the collet 42 is at the same height as the protrusion PAa of the paste adhesive PA applied on the semiconductor wafer D. position, the lowering movement of the bonding head 41 is stopped. At this time, since the upper part of the protrusion PAb is collapsed by the workpiece DG, the distance (KA) between the semiconductor wafer D at the protrusion PAa and the workpiece DG is greater than that of the semiconductor wafer D at the highest side of the semiconductor wafer D. The distance (KB) between the wafer D and the workpiece DG is large (KA>KB). Then, when the controller 8 releases the suction of the workpiece DG by the collet 42 and drops the workpiece DG, the workpiece DG is placed on the semiconductor wafer D as shown in FIG. 16( c ). At this time, the protruding portion PAa is flattened by the load of the workpiece DG, and the distance between the semiconductor wafer D and the workpiece DG becomes uniform (KA=KB).

In this modified example, the workpiece DG is released from the collet 42 at the height (H=Hb, Ha=0) at which the workpiece DG contacts the protruding portion PAa of the paste adhesive PA. Thereby, when the workpiece DG is released from the collet 42, it is possible to suppress the workpiece DG from shifting and falling. That is, the position deviation of the workpiece DG when the workpiece DG is dropped can be suppressed. In addition, the θ deviation of the workpiece DG when the workpiece DG is dropped can be suppressed.

(Fourth modified example) A method of manufacturing the solid-state imaging device in the fourth modified example will be described using FIG. 17 . Fig. 17 is a diagram illustrating the solid-state imaging device after applying the paste adhesive in the fourth modification, Fig. 17(a) is a top view of the main part of the solid-state imaging device, and Fig. 17(b) is a solid-state imaging device A side view before placing a workpiece on the solid-state imaging device shown in FIG. 17( a ).

In the third modified example, although a protruding portion PAa, PAb is respectively provided on opposite sides of the ring-shaped paste adhesive PA, in the fourth modified example, as shown in FIG. Two protrusions PAa, PAb are provided on one side of the annular paste adhesive PA. Like the third modified example, the protruding parts PAa, PAb are the application start point and end point of the ring-shaped paste adhesive PA. The protrusions PAa and PAb can also be formed by "changing the discharge amount per unit time of the nozzle 92 provided in the syringe 91 or slowing down the operation of the nozzle". The method of placing the workpiece DG on the semiconductor wafer D coated with the annular paste adhesive PA in this modification is the same as that of the third modification. Thereby, when the workpiece DG is released from the collet 42, it is possible to suppress the workpiece DG from shifting and falling. That is, the position deviation of the workpiece DG when the workpiece DG is dropped can be suppressed. In addition, the θ deviation of the workpiece DG when the workpiece DG is dropped can be suppressed.

(fifth modified example) Using FIGS. 18 and 19 , a method of manufacturing the solid-state imaging device in the fifth modified example will be described. Fig. 18 is a diagram illustrating the vacuum suction system of the collet of the bonding head in the fifth modified example, Fig. 18(a) is a top view, Fig. 18(b) is a line A-A view in Fig. 18(a), Figure 18(c) is a bottom view. Fig. 19 is a diagram illustrating the workpiece falling obliquely in four directions. Fig. 19(a) is a side view showing the state when the adsorption is released from the front side. Fig. 19(b) is a side view showing the state from the rear side The side view of the state when the adsorption is released, Fig. 19(c) is a side view showing the state when the adsorption is released from the right side, and Fig. 19(d) is a side view showing the state when the adsorption is released from the left side. Side view of the state of the case.

The collet 42 is provided with four independent vacuum suction systems IA, IB, IC, ID. Each of the vacuum suction systems IA, IB, IC, and ID has: an opening, that is, a plurality of suction ports 42a, which are arranged on the lower side (bottom surface) of the collet 42; a horizontal suction part 42b, which communicates with the plurality of suction ports 42a ; And the vertical suction portion 42c communicates with the horizontal suction portion 42b. The lower surface of the collet 42 abutted against the upper surface of the workpiece DG is divided into four areas corresponding to the four vacuum suction systems IA, IB, IC, and ID. The bottom of the collet 42 is rectangular, divided into four areas by two diagonal lines. For example, the plurality of suction ports 42a of the vacuum suction system IB extend along the direction (X-axis direction) of the lower side of the collet 42, the suction ports 42a on the outside are formed longer, and the suction ports 42a on the inside are longer. , the line is formed to be shorter.

In the case of "releasing the suction of the front vacuum suction system IB, IC, ID, and then releasing the suction of the rear vacuum suction system IA", as shown in Figure 19(a), the rear side of the workpiece DG is maintained The front side of the workpiece DG is adsorbed to the collet 42 and released from the collet 42, and the front side of the workpiece DG is inclined downward.

In the case of "releasing the suction of the vacuum suction system ID, IA, and IB on the rear side, and then releasing the suction of the vacuum suction system IC on the front side", as shown in Fig. 19(b), the front side of the workpiece DG is kept held The rear side of the workpiece DG is adsorbed to the collet 42 and released from the collet 42, and the rear side of the workpiece DG is inclined downward.

In the case of "releasing the suction of the vacuum suction systems IA, IB, and IC on the right, and then releasing the suction of the vacuum suction system ID on the left", as shown in FIG. 19(c), the left side of the workpiece DG is maintained to be suctioned. The right side of the workpiece DG is released from the collet 42 by the collet 42, and the right side of the workpiece DG is inclined downward.

In the case of "releasing the suction of the vacuum suction systems IC, IA, and ID on the left side, and then releasing the suction of the vacuum suction system IB on the right side", as shown in Fig. 19(d), the right side of the workpiece DG is maintained to be suctioned The left side of the workpiece DG is released from the collet 42 by the collet 42 , and the left side of the workpiece DG is inclined downward.

The vacuum adsorption system of the collet can be divided separately, and the time point of releasing the adsorption can be staggered, and the wafer can be dropped by dropping any inclination. Thereby, even if the upper surface of the paste adhesive PA is flat and horizontal, the workpiece DG can be dropped obliquely, and air can be exhausted.

(sixth modified example) Using FIGS. 19 and 20 , a method of manufacturing the solid-state imaging device in the sixth modified example will be described. Fig. 20 is a diagram illustrating the vacuum suction system of the collet of the bonding head in the sixth modified example, Fig. 20(a) is a top view, and Fig. 20(b) is a bottom view.

The collet 42 is provided with four independent vacuum suction systems IA, IB, IC, ID. Each of the vacuum suction systems IA, IB, IC, and ID has: an opening, that is, a plurality of suction ports 42a, which are arranged on the lower side (bottom surface) of the collet 42; a plurality of horizontal suction parts 42b, and a plurality of suction ports 42a and a plurality of vertical suction parts 42c communicating with the horizontal suction part 42b. The lower surface of the collet 42 abutted against the upper surface of the workpiece DG is divided into four areas corresponding to the four vacuum suction systems IA, IB, IC, and ID. The lower side of the collet 42 is rectangular, and is divided into four regions by two straight lines passing through the middle points of the opposite sides. For example, a plurality of suction openings 42a are arranged in a grid along the lower side of the collet 42, and the vertical suction portion 42c communicates with the suction opening 42a at the corner of the collet 42 in a straight line with the horizontal suction portion 42b. The suction port 42a communicates with the horizontal suction portion 42b directly or via another horizontal suction portion 42b.

In the case of "releasing the suction of the vacuum suction systems IA and ID on the front side, and then releasing the suction of the vacuum suction systems IB and IC on the rear side", as shown in Figure 19(a), the rear side of the workpiece DG is maintained The front side of the workpiece DG is adsorbed to the collet 42 and released from the collet 42, and the front side of the workpiece DG is inclined downward.

In the case of "releasing the suction of the vacuum suction systems IB and IC on the rear side, and then releasing the suction of the vacuum suction systems IA and ID on the front side", as shown in Fig. 19(b), the front side of the workpiece DG is kept held The rear side of the workpiece DG is adsorbed to the collet 42 and released from the collet 42, and the rear side of the workpiece DG is inclined downward.

In the case of "releasing the suction of the vacuum suction systems IA and IB on the right, and then releasing the suction of the vacuum suction systems IC and ID on the left", as shown in FIG. 19(c), the left side of the workpiece DG is maintained to be suctioned. The right side of the workpiece DG is released from the collet 42 by the collet 42, and the right side of the workpiece DG is inclined downward.

In the case of "releasing the suction of the vacuum suction systems IC and ID on the left, and then releasing the suction of the vacuum suction systems IA and IB on the right", as shown in Fig. 19(d), the right side of the workpiece DG is maintained to be suctioned The left side of the workpiece DG is released from the collet 42 by the collet 42 , and the left side of the workpiece DG is inclined downward.

As mentioned above, although the invention made by the present inventors was concretely demonstrated based on embodiment and modification, this invention is not limited to the said embodiment and modification, Needless to say, various changes are possible.

For example, in the second modified example to the fourth modified example, an example in which one or two protrusions are provided on the ring-shaped paste adhesive PA has been described, but three or more protrusions may be provided.

Also, in the fifth modification and the sixth modification, an example in which four vacuum suction systems were provided was described, but two, three, or five or more vacuum suction systems may be provided.

Also, in the embodiment, an example of a glass wafer as the workpiece DG has been described, but the workpiece in the semiconductor wafer D having a light receiving element other than visible light (for example, infrared rays) may be a silicon wafer.

In addition, in the embodiment, although the example in which the paste adhesive PA is coated on the semiconductor wafer D in a ring shape is described, the semiconductor wafer (crystal grain) divided from the semiconductor wafer is laminated. In the case of the semiconductor wafer D, the paste adhesive PA may be applied on the semiconductor wafer D in a shape other than a ring (for example, X-shape or Z-shape).

Also, in the embodiment, an example in which the workpiece DG picked up from the wafer supply unit 1 by the bonding head 41 is bonded to the semiconductor wafer D mounted on the substrate S is described. An intermediate platform part is provided between the parts 4, and the workpiece DG picked up from the wafer supply part 1 by the pick-up head is placed on the intermediate platform, and the workpiece DG is picked up from the intermediate platform by the bonding head 41 again and bonded to the substrate S mounted on the substrate S. semiconductor wafer D.

8: Control Department 10: Engagement device 41: joint head 42: collet 91:Syringe D: semiconductor wafer DG: workpiece PA: paste adhesive S: Substrate

[ Fig. 1] Fig. 1 is a top view schematically showing a joining device in the embodiment. [ Fig. 2] Fig. 2 is a cross-sectional view schematically showing a wafer supply unit shown in Fig. 1 . [ Fig. 3] Fig. 3 is a side view schematically showing the preforming part shown in Fig. 1 . [ Fig. 4] Fig. 4 is a schematic side view showing a wafer supply section and a bonding section shown in Fig. 1 . [ Fig. 5 ] A flowchart showing a method of manufacturing a solid-state imaging device using the bonding device shown in Fig. 1 . [ Fig. 6] Fig. 6 is a schematic view showing a solid-state imaging device manufactured by the bonding apparatus shown in Fig. 1 . [ Fig. 7] Fig. 7 is a diagram illustrating a method of manufacturing the solid-state imaging device shown in Fig. 6 . [ Fig. 8] Fig. 8 is a diagram illustrating problems of the method of manufacturing the solid-state imaging device shown in Fig. 6 . [ Fig. 9] Fig. 9 is a diagram illustrating a manufacturing method in the embodiment of the solid-state imaging device shown in Fig. 6 . [ Fig. 10] Fig. 10 is a diagram illustrating a manufacturing method in a first modification example of the solid-state imaging device shown in Fig. 6 . [ Fig. 11] Fig. 11 is a diagram illustrating a solid-state imaging device after application of a paste adhesive in a second modified example. [ Fig. 12] Fig. 12 is a diagram illustrating a method of manufacturing a solid-state imaging device in a second modified example in a case where a semiconductor wafer is mounted without inclination with respect to a substrate. [ Fig. 13] Fig. 13 is a diagram illustrating a method of manufacturing a solid-state imaging device in a second modification in which a semiconductor wafer is mounted obliquely with respect to a substrate. [ Fig. 14] Fig. 14 is a diagram illustrating a solid-state imaging device after application of a paste adhesive in a third modified example. [ Fig. 15] Fig. 15 is a diagram illustrating a method of manufacturing a solid-state imaging device in a third modification in which the semiconductor wafer is mounted without being inclined to the substrate. [ Fig. 16] Fig. 16 is a diagram illustrating a method of manufacturing a solid-state imaging device in a third modification in which a semiconductor wafer is mounted obliquely with respect to a substrate. [ Fig. 17] Fig. 17 is a diagram illustrating a solid-state imaging device after application of a paste adhesive in a fourth modification. [ Fig. 18 ] A diagram illustrating a vacuum suction system of a collet of a bonding head in a fifth modified example. [ Fig. 19 ] A diagram illustrating a workpiece falling obliquely in four directions. [ Fig. 20 ] A diagram illustrating a vacuum suction system of a collet of a bonding head in a sixth modified example.

41: joint head

42: collet

45:Joint Platform

D: semiconductor wafer

S: Substrate

DG: workpiece

PA: paste adhesive

Claims (15)

A jointing device is characterized in that it has: A syringe for applying a paste adhesive to a semiconductor wafer mounted on a substrate; a bonding head having a collet for sucking a workpiece at its front end, and placing the workpiece on the paste adhesive applied by the syringe; and The control unit is configured to release the suction of the workpiece by the collet at a position where the distance between the highest position of the paste adhesive applied on the semiconductor wafer and the workpiece is within a predetermined range, so that The workpiece falls onto the paste adhesive. The bonding device according to claim 1, wherein, The predetermined range is set based on variations in the inclination of the semiconductor wafer with respect to the substrate and variations in the application height of the paste adhesive that have been measured in advance. The bonding device according to claim 2, wherein, The aforementioned predetermined range is more than 0 μm and not more than 50 μm. The bonding device according to claim 2, wherein, The aforementioned predetermined range is 0 μm. The bonding device as claimed in claim 4, wherein, The control unit is configured to measure the maximum height of the paste adhesive. A jointing device is characterized in that it has: A syringe, which applies the paste adhesive to the semiconductor wafer mounted on the substrate in a ring shape; a bonding head having a collet for sucking a workpiece at its front end, and placing the workpiece on the paste adhesive applied by the syringe; and Control Department, The aforementioned control unit is composed of: When "applying the ring-shaped paste adhesive on the semiconductor wafer with the syringe", the protruding part is provided, At the position where the lower surface of the workpiece is in contact with the protrusion, the lowering movement of the bonding head is stopped, Release the adsorption of the workpiece by the collet, and drop the workpiece onto the paste adhesive. The joining device according to claim 6, wherein, The control unit is configured to measure the height of the protrusion. The bonding device according to claim 7, wherein, The above-mentioned protruding part has two or more places on the above-mentioned paste adhesive. The joining device according to claim 6, wherein, The aforementioned protruding parts are the starting point and the ending point of the application of the aforementioned paste adhesive. The joining device according to claim 6, wherein, The control unit is configured to form the protruding portion by “changing the discharge amount per unit time of the nozzle of the syringe or slowing down the moving speed of the nozzle”. The bonding device according to claim 7, wherein, The control unit is configured to measure the height of the protruding portion by a sensor or an optical camera. The bonding device according to claim 1 or 6, wherein, The control unit is placed in such a manner that the workpiece is released from a state where "the surface of the semiconductor wafer on which the paste adhesive is applied is not parallel to the workpiece". The bonding device according to claim 12, wherein, The aforementioned control unit is configured to divide the vacuum adsorption system of the aforementioned collet into a plurality of independent areas, and to stagger the time point of desorption of each of the aforementioned areas. A method of manufacturing a solid-state imaging device, characterized in that it has: The process of "carrying a substrate mounted with a semiconductor wafer into a bonding device equipped with a bonding head having a collet that absorbs a workpiece at its front end; Coating process, coating the paste adhesive on the aforementioned semiconductor wafer in a circular manner; and In the bonding process, the aforementioned workpiece is placed on the aforementioned paste adhesive, The aforementioned bonding process is to stop the lowering movement of the aforementioned bonding head at the position where the highest position of the aforementioned paste adhesive applied on the aforementioned semiconductor wafer is separated from the aforementioned workpiece by a predetermined distance, and release the clamping action performed by the aforementioned collet. The adsorption of the aforementioned workpiece makes the aforementioned workpiece drop onto the aforementioned paste adhesive. A method of manufacturing a solid-state imaging device, characterized in that it has: The process of "carrying a substrate mounted with a semiconductor wafer into a bonding device equipped with a bonding head having a collet that absorbs a workpiece at its front end; Coating process, coating the paste adhesive on the aforementioned semiconductor wafer in a circular manner; and In the bonding process, the aforementioned workpiece is placed on the aforementioned paste adhesive, The above-mentioned coating process is to provide a protruding part when the ring-shaped paste adhesive is applied on the above-mentioned semiconductor wafer, The aforementioned joining process is to stop the lowering movement of the aforementioned joint head at the position where the lower surface of the aforementioned workpiece is in contact with the aforementioned protrusion, and release the adsorption of the aforementioned workpiece by the aforementioned collet, so that the aforementioned workpiece is dropped to the aforementioned paste state. over the agent.

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