JP2022150045A - Bonding device and solid-state imaging device manufacturing method - Google Patents

Abstract

To provide a technique that enables a workpiece to follow the inclination of a semiconductor chip.SOLUTION: A bonding device includes a syringe for applying a paste adhesive onto a semiconductor chip mounted on a substrate, a bonding head having a collet for sucking a workpiece at its tip and placing the workpiece on the paste adhesive applied by the syringe, and a control unit configured to release the adsorption of the workpiece by the collet to drop the workpiece on the paste adhesive at a position where the distance between the highest position of the paste adhesive applied on the semiconductor chip and the workpiece is within a predetermined range.SELECTED DRAWING: Figure 9

Description

The present disclosure relates to a bonding apparatus, and is applicable, for example, to a bonding apparatus that bonds a workpiece to a semiconductor chip.

A bonding apparatus is an apparatus that bonds (places and bonds) a semiconductor chip or the like onto a substrate such as a wiring board or a lead frame or a semiconductor chip that has already been bonded, using resin paste or the like as a bonding material. A bonding apparatus, for example, picks up a semiconductor chip or the like from a semiconductor wafer or the like by using a suction nozzle called a collet attached to the tip of a bonding head, places it on a predetermined position on a substrate, and applies a pressing force. The operation (work) of performing bonding by applying is performed repeatedly.

A solid-state imaging device includes, for example, a semiconductor chip on which an image sensor, a microlens, and the like are formed, a wiring board on which the semiconductor chip is mounted, a cover glass that protects the semiconductor chip, and the like. When performing color imaging, a color filter is formed between the image sensor and the microlens. Some semiconductor chips have a laminated structure in which a plurality of semiconductor substrates are bonded together. The semiconductor chip and the cover glass are adhered by an adhesive formed on the outer periphery. Here, the image sensor is composed of a CCD (Charge Coupled Device), a CMOS (Complementary Metal Oxide Semiconductor), or the like. As the cover glass, for example, functional glass provided with various functional layers such as AR (antireflection), IR (infrared) cut, gas barrier, etc. depending on the application may be used.

JP 2016-12695 A

For example, in manufacturing a solid-state imaging device, there is a case where a paste adhesive is applied onto a semiconductor chip placed on a wiring substrate (substrate), and a workpiece such as a cover glass (glass chip) is bonded thereon. . When the semiconductor chip is mounted obliquely on the substrate due to warping of the substrate or non-uniformity of the adhesive that bonds the semiconductor chip to the substrate, it is necessary to maintain the inclination of the placed workpiece so as to follow the semiconductor chip. There are cases. However, since the bonding head holds the work horizontally, the work is partially pushed into the paste adhesive when the bonding head places the work on the paste adhesive. For this reason, the workpiece may not be able to follow the inclination of the semiconductor chip.

An object of the present disclosure is to provide a technology that allows a workpiece to follow the inclination of a semiconductor chip. Other problems and novel features will become apparent from the description of the specification and the accompanying drawings.

A brief outline of a representative one of the present disclosure is as follows.
That is, the bonding apparatus has a syringe for applying a paste adhesive onto a semiconductor chip mounted on a substrate, and a collet for sucking a workpiece at the tip of the syringe, and the paste adhesive is applied by the syringe. a bonding head for placing the work on the semiconductor chip; a control unit configured to release suction of the work and drop the work onto the paste adhesive.

According to the above bonding apparatus, the workpiece can follow the inclination of the semiconductor chip.

It is a top view which shows the outline of the bonding apparatus in embodiment. FIG. 2 is a cross-sectional view showing an outline of a chip supply section shown in FIG. 1; It is a side view which shows the outline of the preform part shown in FIG. 2 is a side view showing an outline of a chip supply section and a bonding section shown in FIG. 1; FIG. 2 is a flow chart showing a method of manufacturing a solid-state imaging device using the bonding apparatus shown in FIG. 1; 2 is a diagram showing an outline of a solid-state imaging device manufactured by the bonding apparatus shown in FIG. 1; FIG. 7A and 7B are diagrams for explaining a method of manufacturing the solid-state imaging device shown in FIG. 6; 7A and 7B are diagrams for explaining a problem of the manufacturing method of the solid-state imaging device shown in FIG. 6; FIG. 7A and 7B are diagrams for explaining a manufacturing method in the embodiment of the solid-state imaging device shown in FIG. 6; 7A and 7B are diagrams for explaining a manufacturing method in the first modified example of the solid-state imaging device shown in FIG. 6; It is a figure explaining the solid-state imaging device after apply|coating of the paste-like adhesive in a 2nd modification. It is a figure explaining the manufacturing method of the solid-state imaging device in a 2nd modification when the semiconductor chip is mounted without inclining with respect to a board|substrate. It is a figure explaining the manufacturing method of the solid-state imaging device in a 2nd modification when the semiconductor chip is mounted inclining with respect to a board|substrate. It is a figure explaining the solid-state imaging device after apply|coating of the paste adhesive in a 3rd modification. It is a figure explaining the manufacturing method of the solid-state imaging device in a 3rd modification when the semiconductor chip is mounted without inclining with respect to a board|substrate. It is a figure explaining the manufacturing method of the solid-state imaging device in a 3rd modification when the semiconductor chip is mounted inclining with respect to a board|substrate. It is a figure explaining the solid-state imaging device after the application of the paste-like adhesive in the fourth modification. FIG. 20 is a diagram for explaining a vacuum suction system of a collet of a bonding head in a fifth modified example; It is a figure explaining that a workpiece|work inclines and falls in four directions. FIG. 11 is a diagram illustrating a vacuum suction system of a collet of a bonding head in a sixth modified example;

Embodiments will be described below with reference to the drawings. However, in the following description, the same components may be denoted by the same reference numerals, and repeated descriptions may be omitted. In addition, in order to make the description clearer, the drawings may schematically represent the width, thickness, shape, etc. of each part compared to the actual embodiment, but this is only an example, and the interpretation of the present disclosure It is not limited.

A configuration of a bonding apparatus according to an embodiment will be described with reference to FIGS. 1 to 4. FIG. FIG. 1 is a top view showing an outline of a bonding apparatus according to an embodiment. FIG. 2 is a cross-sectional view showing an outline of the chip supply section shown in FIG. 3 is a side view schematically showing the preform portion shown in FIG. 1. FIG. FIG. 4 is a side view showing an outline of the chip supply section and bonding section shown in FIG.

As shown in FIG. 1, the bonding apparatus 10 is roughly divided into a chip supply section 1 that supplies a workpiece DG to be mounted on a substrate S, a preform section 9, a bonding section 4, a transfer section 5, and a substrate supply section. 6, a substrate unloading section 7, and a control section 8 that monitors and controls the operation of each section. The Y-axis direction is the front-back direction of the bonding apparatus 10, and the X-axis direction is the left-right direction. The chip supply unit 1 is arranged on the front side of the bonding device 10, and the bonding unit 4 is arranged on the back side. Here, on the substrate S, the semiconductor chips D are mounted in a plurality of product areas that eventually form one package.

As shown in FIG. 2 , the chip supply unit 1 has a wafer holder 12 that holds the wafer 11 and a push-up unit 13 that pushes up the work DG from the wafer 11 . Here, the work DG is, for example, a glass chip. A dicing tape 16 is attached to a disk-shaped glass plate, and the wafer 11 is diced into a plurality of glass chips. The wafer holder 12 has an expand ring 15 that holds a wafer ring 14, and a support ring 17 that horizontally positions a dicing tape 16 held by the wafer ring 14 and to which a plurality of workpieces DG are adhered. The thrusting unit 13 is arranged inside the support ring 17 . The control unit 8 moves the wafer holder 12 in the X-axis direction and the Y-axis direction by driving means (not shown) to move the work DG to be picked up to the position of the push-up unit 13 (pickup position).

The wafer holding table 12 lowers the expand ring 15 holding the wafer ring 14 when pushing up the workpiece DG. As a result, the dicing tape 16 held by the wafer ring 14 is stretched to widen the distance between the workpieces DG.

As shown in FIG. 3, the preform unit 9 grasps a syringe 91, a driving unit (not shown) that moves the syringe 91 in the X-axis direction, the Y-axis direction, and the vertical direction, and the application position of the syringe 91. and a preform camera 94 as an imaging device. The preform unit 9 applies a paste adhesive PA with a syringe 91 to the semiconductor chip D mounted on the substrate S conveyed by the conveying unit 5 . The syringe 91 is filled with a paste adhesive, and is configured such that the paste adhesive PA is pushed out from the tip of the nozzle 92 and applied to the semiconductor chip D mounted on the substrate S by air pressure. .

As shown in FIG. 4, the bonding unit 4 includes a bonding head 41 having a collet 42 that sucks and holds the workpiece DG at its tip, a Y driving unit (not shown) that moves the bonding head 41 in the Y-axis direction, a substrate S and a substrate recognition camera 44 that captures an image of a position recognition mark (not shown) and recognizes the bonding position. The bonding unit 4 picks up the work DG from the chip supply unit 1 and bonds it onto the semiconductor chip D of the transported substrate S coated with the paste adhesive PA. At this time, the bonding head 41 corrects the pickup position/orientation based on the imaging data of the wafer recognition camera 24, picks up the workpiece DG from the wafer 11, and mounts it on the substrate based on the imaging data of the substrate recognition camera 44. The workpiece DG is bonded onto the semiconductor chip D which is located.

As shown in FIG. 1, the transport section 5 has a transport lane 52 as a transport path along which the substrate S moves. With such a configuration, the substrate S moves from the substrate supply unit 6 along the transport lane 52 to the coating position, moves to the bonding position after coating, moves to the substrate unloading unit 7 after bonding, and moves to the substrate unloading unit 7. The substrate S is handed over to the unloading section 7 .

The control unit 8 includes a memory that stores a program (software) for monitoring and controlling the operation of each unit of the bonding apparatus 10, and a central processing unit (CPU) that executes the program stored in the memory.

Next, a method for manufacturing a solid-state imaging device using the bonding device according to the embodiment will be described with reference to FIG. FIG. 5 is a flow chart showing a method of manufacturing a solid-state imaging device using the bonding apparatus shown in FIG.

(Step S11: Wafer/substrate loading step)
A wafer cassette (not shown) storing a wafer ring holding a dicing tape 16 to which a workpiece DG divided from the wafer 11 is attached is loaded into the bonding apparatus 10 . The control unit 8 supplies the wafer ring 14 to the chip supply unit 1 from the wafer cassette in which the wafer ring 14 is stored. Also, the substrate S on which the semiconductor chip D is mounted is prepared and carried into the substrate supply section of the bonding apparatus 10 .

(Step S12: preform step)
The control unit 8 acquires an image of the surface of the semiconductor chip D mounted on the substrate S before application by the preform camera 94, and confirms the surface to be applied with the paste adhesive PA. If there is no problem with the surface to be applied, the control unit 8 applies the paste adhesive PA from the syringe 91 to the semiconductor chip D mounted on the substrate S conveyed by the conveying unit 5 . The paste adhesive PA is, for example, a UV curable adhesive. After application, the control unit 8 reconfirms with the preform camera 94 whether the paste adhesive PA has been applied correctly, and inspects the applied paste adhesive PA. If there is no problem with the coating, the controller 8 transports the substrate S to the bonding stage 45 by the transporter 5 .

(Step S13: bonding step)
The control unit 8 moves the wafer 11 so that the desired work DG can be picked up from the wafer 11 by the wafer holding table 12, and performs positioning and surface inspection based on data captured by the wafer recognition camera 24. FIG. The control unit 8 calculates the deviation amount (X, Y, θ directions) of the work DG on the wafer holding table 12 from the work position reference point of the bonding device 10 by image processing. As for the work position reference point, a predetermined position of the wafer holding table 12 is held in advance as an initial setting of the apparatus. Then, the control unit 8 performs surface inspection of the work DG by image processing.

Further, the controller 8 captures an image of the substrate S placed on the bonding stage 45 with the substrate recognition camera 44 . The control unit 8 calculates the deviation amount (X, Y, θ directions) of the substrate S from the substrate position reference point of the bonding apparatus 10 by image processing. As for the substrate position reference point, a predetermined position of the bonding portion 4 is held in advance as an initial setting of the apparatus.

Then, the control unit 8 moves the bonding head 41 in parallel and lowers it to directly above the work DG to be picked up, corrects the suction position of the bonding head 41 from the calculated shift amount of the work DG, and vacuums the work DG with the collet 42. Adsorb. The control unit 8 raises, horizontally moves, and lowers the bonding head 41 that has attracted the work DG from the wafer 11 to attach the work DG to a predetermined position of the semiconductor chip D mounted on the substrate S on the bonding stage 45. . Then, based on the image data captured by the substrate recognition camera 44, the control unit 8 inspects whether the workpiece DG is bonded at the desired position.

(Step S14: substrate unloading step)
The control unit 8 conveys the substrate S to which the work DG is bonded to the substrate unloading unit 7 . The control unit 8 takes out the substrate S bonded with the work DG in the substrate unloading unit 7 . The substrate S is unloaded from the bonding apparatus 10 .

Next, in order to clarify this embodiment, the structure and manufacturing method of the solid-state imaging device manufactured by the bonding apparatus according to this embodiment will be described with reference to FIGS. 6 and 7. FIG. 6A and 6B are diagrams schematically showing a solid-state imaging device manufactured by the bonding apparatus shown in FIG. 1, FIG. 6A being a top view and FIG. 6B being a side view. 7A and 7B are diagrams for explaining a method of manufacturing the solid-state imaging device shown in FIG. It is a side view which shows the state after being mounted.

As shown in FIG. 6B, the solid-state imaging device is constructed by laminating a semiconductor chip D, a paste adhesive PA, and a work DG on a substrate S in this order. As shown in FIG. 6A, the substrate S, the semiconductor chip D, and the workpiece DG are each rectangular in plan view. The substrate S, the semiconductor chip D, and the workpiece DG are smaller in this order. Also, the paste adhesive PA is annular in plan view, and its size is equal to or slightly smaller than that of the work DG. The thickness of the work DG is, for example, about 400 μm, and the height of the paste adhesive is, for example, about 125 μm.

The semiconductor chip D is mounted on the substrate S in advance, and a paste adhesive PA is applied onto the semiconductor chip D in the preform portion 9 . Then, the bonding head 41 sucks and holds the work DG with the collet 42 and transports it directly above the semiconductor chip to which the paste adhesive PA is applied. At this time, the collet 42 of the bonding head 41 that holds and bonds the workpiece DG is normally horizontally positioned as shown in FIG. 7(a). In this state, as shown in FIG. 7(b), the workpiece DG is pushed to a predetermined position for bonding. Ideally, the distance between the semiconductor chip D and the workpiece DG after bonding (the height of the paste adhesive PA) is uniform (KA=KB).

Next, problems in bonding the workpiece DG to the semiconductor chip D mounted on the substrate S at an angle will be described with reference to FIG. 8A and 8B are diagrams for explaining problems in the manufacturing method of the solid-state imaging device shown in FIG. is a side view showing a state in which a work is placed;

When the semiconductor chip D mounted on the substrate S is tilted with respect to the upper surface of the substrate S as shown in FIG. 8A, the workpiece DG is pushed horizontally as shown in FIG. Therefore, with the horizontal bonding stage 45 as a reference, the distance (KA) between the semiconductor chip D and the workpiece DG is narrow in the high part of the semiconductor chip D (left side in the figure), and the low part of the semiconductor chip D (right side in the figure). , the distance (KB) between the semiconductor chip D and the workpiece DG is wide and non-uniform (KA<KB).

A method for manufacturing a solid-state imaging device according to this embodiment, which solves the above problems, will be described with reference to FIG. 9A and 9B are diagrams for explaining a manufacturing method in the embodiment of the solid-state imaging device shown in FIG. 9(c) is a side view showing a state immediately after the work has been dropped. FIG.

As shown in FIG. 9A, the control unit 8 causes the workpiece DG held by the collet 42 to be separated from the highest height of the paste adhesive PA applied on the semiconductor chip D by a predetermined distance (Ha). At this position, the downward movement of the bonding head 41 is stopped. Then, as shown in FIG. 9B, the control unit 8 releases the suction of the work DG by the collet 42, drops the work DG, and places the work DG on the semiconductor chip D. Then, as shown in FIG. As shown in FIG. 9C, when the paste adhesive PA is applied at a uniform height, the distance between the semiconductor chip D and the workpiece DG is uniform (KA=KB). It should be noted that the downward movement of the bonding head 41 may not be stopped when the work DG is released from the collet 42. For example, after the work DG is released from the collet 42, the downward movement of the bonding head 41 is stopped. You may

Here, the predetermined interval (Ha) is the height at which the pasty adhesive PA is not pushed in by the dropping of the work DG, and is preferably 0 μm or more and 50 μm or less. Further, the height (H) at which the collet 42 releases the work DG is always set so that the predetermined interval (Ha) is 0 μm or more and The position is set so as to be 50 μm or less. That is, in this embodiment, the height (Hb) of the paste adhesive PA is not measured each time the workpiece DG is placed. Here, the height (H) is, for example, the height from the upper surface of the bonding stage 45 to the lower surface of the workpiece DG.

According to this embodiment, the collet 42 of the bonding head 41 does not push the workpiece DG into the paste adhesive PA. This allows the work DG to follow the paste adhesive PA. Therefore, when the paste adhesive PA is applied to a uniform height, the workpiece DG can be placed parallel to the semiconductor chip D even if the semiconductor chip D is tilted.

Further, according to the present embodiment, when the semiconductor chip D is tilted, the work DG is removed from the state in which the surface of the paste adhesive PA including the semiconductor chip D is not parallel to the work DG to be placed. It is placed on the semiconductor chip D so as to lay down. As a result, the paste adhesive PA applied in an annular shape can be placed while the air inside is removed, and external expansion of the paste adhesive PA can be suppressed.

<Modification>
Some representative modifications of the embodiment are illustrated below. In the description of the modifications below, the same reference numerals as in the above-described embodiment may be used for portions having the same configurations and functions as those described in the above-described embodiment. For the description of this part, the description in the above-described embodiment can be used as appropriate within a technically consistent range. Also, part of the above-described embodiments and all or part of multiple modifications can be appropriately applied in combination within a technically consistent range.

(first modification)
10A and 10B, which explain the manufacturing method of the solid-state imaging device according to the first modified example, are diagrams for explaining the manufacturing method of the solid-state imaging device shown in FIG. 10(b) is a side view showing the state immediately before the work is dropped, and FIG. 10(c) is a side view showing the state where the work is placed; FIG. It is a diagram.

In the embodiment, the height (Hb) of the paste adhesive PA applied to the semiconductor chip D (including variations in the paste adhesive PA, the semiconductor chip D, and the substrate S) is evaluated in advance before continuous operation. , and the height (H) at which the collet 42 releases the work DG is always set at a position such that it is at a predetermined interval (Ha). In this modification, during continuous operation, after application of the paste adhesive PA, the distance from the upper surface of the preform stage 95 or the bonding stage 45 to the highest portion of the paste adhesive PA for each substrate, for each row, or for each application. The height (Hb) is measured by a rangefinder 46 using a sensor, an optical camera, or the like, and the position is set so that the height at which the collet 42 releases the work DG is Hb.

As shown in FIG. 10A, the semiconductor chip D is tilted with respect to the substrate S. As shown in FIG. Also, the paste adhesive PA is applied to a uniform height. In this case, the portion where the paste adhesive PA is higher than the other portions in the annular application area of the paste adhesive PA is the highest side of the semiconductor chip D placed on the substrate S. .

As shown in FIG. 10(b), the controller 8 sets the work DG held by the collet 42 to the same height (Hb) as the highest height (Hb) of the paste adhesive PA applied on the semiconductor chip D. , the downward movement of the bonding head 41 is stopped. At this time, the distance (KA) between the semiconductor chip D and the work DG at the highest position of the paste adhesive PA is greater than the distance (KB) between the semiconductor chip D and the work DG at the lowest position of the paste adhesive PA. is also small (KA<KB). Then, when the controller 8 releases the suction of the work DG by the collet 42 and drops the work DG, the work DG is placed on the semiconductor chip D as shown in FIG. 10(c). At this time, the distance between the semiconductor chip D and the workpiece DG becomes uniform (KA=KB).

In this modification, the work DG is released from the collet 42 at the height (H=Hb, Ha=0) at which the work DG contacts the highest portion of the paste adhesive PA. That is, the work DG is released from the collet 42 at the time (moment) when the work DG contacts the paste adhesive PA. As a result, when the work DG is released from the collet 42, the work DG is in contact with one side of the annular paste adhesive PA, so that the work DG can be prevented from slipping and falling. That is, it is possible to suppress positional displacement of the work DG when the work DG is dropped. Further, it is possible to suppress the deviation of θ of the work DG when the work DG is dropped.

(Second modification)
A method for manufacturing a solid-state imaging device according to the second modification will be described with reference to FIGS. 11 to 13. FIG. 11A and 11B are diagrams for explaining the solid-state imaging device after application of the paste-like adhesive in the second modified example, FIG. FIG. 11B is a side view of the solid-state imaging device shown in FIG. 11A before a workpiece is placed; FIGS. 12A and 12B are diagrams for explaining the manufacturing method of the solid-state imaging device according to the second modification in which the semiconductor chip is mounted without being tilted with respect to the substrate, and FIG. 12(b) is a side view showing the state immediately before the work is dropped, and FIG. 12(c) is a side view showing the state where the work is placed. 13A and 13B are diagrams for explaining the manufacturing method of the solid-state imaging device according to the second modification in which the semiconductor chip is mounted at an angle with respect to the substrate, and FIG. 13(b) is a side view showing the state immediately before the work is dropped, and FIG. 13(c) is a side view showing the state where the work is placed.

In the embodiment and the first modification, the paste adhesive PA is applied to a uniform height. In the second modification, as shown in FIG. A single projecting portion PAa is provided which is higher than the PA coating height. As shown in FIG. 11(a), the projecting portion PAa is the application start point and end point of the annular paste adhesive PA. The protruding portion PAa may be formed by changing the discharge amount per unit time of the nozzle 92 provided in the syringe 91 or by slowing the nozzle operation. The projecting portion PAa has a circular shape when viewed from above, and its size is approximately the same as the width of the applied annular paste-like adhesive PA.

As shown in FIG. 12A, the semiconductor chip D is mounted on the substrate S without tilting. In this case, the portion where the paste adhesive PA is highest in height relative to other portions in the application area of the annular paste adhesive PA is the projecting portion PAa.

As shown in FIG. 12(b), the controller 8 sets the work DG held by the collet 42 to the same height (Hb) as the highest height (Hb) of the paste adhesive PA applied on the semiconductor chip D. , the downward movement of the bonding head 41 is stopped. At this time, the distance (A) between the semiconductor chip D and the work DG at the protruding portion PAa is the same as the distance (B) between the semiconductor chip D and the work DG at other positions of the protruding portion PAa of the paste adhesive PA. There is (KA=KB). Then, when the controller 8 releases the suction of the work DG by the collet 42 and drops the work DG, the work DG is placed on the semiconductor chip D as shown in FIG. 12(c). At this time, the projecting portion PAa is flattened by the load of the work DG, and the distance between the semiconductor chip D and the work DG becomes uniform (KA=KB).

As shown in FIG. 13A, the semiconductor chip D is tilted with respect to the substrate S. As shown in FIG. In this case, the portion where the paste adhesive PA is higher than the other portions in the annular application area of the paste adhesive PA is the projecting portion PAa. Here, the protruding portion PAa is higher than the top surface of the paste adhesive PA on the highest side of the semiconductor chip D when the semiconductor chip D is tilted and mounted on the substrate S.

As shown in FIG. 13(b), the controller 8 sets the work DG held by the collet 42 to the same height (Hb) as the highest height (Hb) of the paste adhesive PA applied on the semiconductor chip D. , the controller 8 stops the downward movement of the bonding head 41 . At this time, the distance (KA) between the semiconductor chip D and the work DG at the projecting portion PAa is larger than the distance (KB) between the semiconductor chip D and the work DG at the highest side of the semiconductor chip D (KA>KB). . Then, when the controller 8 releases the suction of the work DG by the collet and drops the work DG, the work DG is placed on the semiconductor chip D as shown in FIG. 13(c). At this time, the projecting portion PAa is flattened by the load of the work DG, and the distance between the semiconductor chip D and the work DG becomes uniform (KA=KB).

In this modification, the work DG is released from the collet 42 at the height (H=Hb, Ha=0) at which the work DG contacts the protrusion PAa of the paste adhesive PA. That is, the work DG is released from the collet 42 at the time (instantaneous) when the work DG contacts the projecting portion PAa. Thereby, when the work DG is released from the collet 42, it is possible to prevent the work DG from slipping and falling. That is, it is possible to suppress positional displacement of the work DG when the work DG is dropped.

(Third modification)
A method for manufacturing a solid-state imaging device according to the third modification will be described with reference to FIGS. 14 to 16. FIG. 14A and 14B are diagrams for explaining the solid-state imaging device after application of the paste-like adhesive in the third modification, FIG. FIG. 14B is a side view of the solid-state imaging device shown in FIG. 14A before a workpiece is placed; 15A and 15B are diagrams for explaining the manufacturing method of the solid-state imaging device according to the third modification in which the semiconductor chip is mounted without being tilted with respect to the substrate, and FIG. 15(b) is a side view showing the state immediately before the work is dropped, and FIG. 15(c) is a side view showing the state where the work is placed. 16A and 16B are diagrams for explaining the manufacturing method of the solid-state imaging device according to the third modification in which the semiconductor chip is mounted at an angle with respect to the substrate, and FIG. 16(b) is a side view showing the state immediately before the work is dropped, and FIG. 16(c) is a side view showing the state where the work is placed.

In the second modification, the annular paste adhesive PA is provided with one protrusion PAa. In the third modification, as shown in FIG. 14, the annular paste adhesive PA is provided with two protrusions. PAa and PAb are provided. Protrusions PAa and PAb are the application start and end points of the annular paste adhesive PA, as in the second modification. The protrusions PAa and PAb may be formed by changing the ejection amount per unit time of the nozzle 92 provided on the syringe 91 or slowing down the nozzle moving speed.

As shown in FIG. 15A, the semiconductor chip D is mounted on the substrate S without tilting. In this case, the protruding portions PAa and PAb are the portions where the paste adhesive PA is highest in height relative to other portions in the annular application area of the paste adhesive PA.

As shown in FIG. 15(b), the controller 8 sets the work DG held by the collet 42 to the same height (Hb) as the highest height (Hb) of the paste adhesive PA applied on the semiconductor chip D. , the downward movement of the bonding head 41 is stopped. At this time, the distance (KA) between the semiconductor chip D and the work DG at the protruding portion PAa is the same as the distance (KB) between the semiconductor chip D and the work DG at the protruding portion PAb (KA=KB). Then, when the controller 8 releases the suction of the work DG by the collet 42 and drops the work DG, the work DG is placed on the semiconductor chip D as shown in FIG. 15(c). At this time, the protrusions PAa and PAb are flattened by the load of the work DG, and the distance between the semiconductor chip D and the work DG becomes uniform (KA=KB).

As shown in FIG. 16A, the semiconductor chip D is tilted with respect to the substrate S. As shown in FIG. In this case, the portion where the paste adhesive PA is higher than the other portions in the annular application area of the paste adhesive PA is the protruding portion PAb. Here, the protruding portion PAa is lower than the height of the protruding portion PAb on the highest side of the semiconductor chip D when the semiconductor chip D is tilted with respect to the substrate S and mounted.

As shown in FIG. 16B, the control unit 8 causes the workpiece DG held by the collet 42 to be at the same height as the protrusion PAa of the paste adhesive PA applied onto the semiconductor chip D. At the position, the lowering motion of the bonding head 41 is stopped. At this time, since the upper portion of the protruding portion PAb is crushed by the work DG, the distance (KA) between the semiconductor chip D and the work DG at the protruding portion PAa is the distance between the semiconductor chip D and the work DG at the highest side of the semiconductor chip D. Greater than the interval (KB) (KA>KB). Then, when the controller 8 releases the suction of the work DG by the collet 42 and drops the work DG, the work DG is placed on the semiconductor chip D as shown in FIG. 16(c). At this time, the projecting portion PAa is flattened by the load of the work DG, and the distance between the semiconductor chip D and the work DG becomes uniform (KA=KB).

In this modification, the work DG is released from the collet 42 at the height (H=Hb, Ha=0) at which the work DG contacts the protrusion PAa of the paste adhesive PA. Thereby, when the work DG is released from the collet 42, it is possible to prevent the work DG from slipping and falling. That is, it is possible to suppress positional displacement of the work DG when the work DG is dropped. Further, it is possible to suppress the deviation of θ of the work DG when the work DG is dropped.

(Fourth modification)
A method for manufacturing a solid-state imaging device according to the fourth modification will be described with reference to FIG. 17A and 17B are diagrams for explaining the solid-state imaging device after application of the paste adhesive in the fourth modification, FIG. 17A is a top view of the main part of the solid-state imaging device, FIG. 17B is a side view of the solid-state imaging device shown in FIG. 17A before a workpiece is placed;

In the third modified example, the protrusions PAa and PAb are provided on each of the two opposing sides of the annular paste adhesive PA. In the fourth modified example, as shown in FIG. Two protrusions PAa and PAb may be provided on one side of the adhesive PA. Protrusions PAa and PAb are the application start and end points of the annular paste adhesive PA, as in the third modification. The protrusions PAa and PAb may be formed by changing the ejection amount per unit time of the nozzle 92 provided in the syringe 91 or by slowing the nozzle operation. The method of placing the workpiece DG on the semiconductor chip D coated with the annular paste-like adhesive PA in this modification is the same as in the third modification. Thereby, when the work DG is released from the collet 42, it is possible to prevent the work DG from slipping and falling. That is, it is possible to suppress positional displacement of the work DG when the work DG is dropped. Further, it is possible to suppress the deviation of θ of the work DG when the work DG is dropped.

(Fifth Modification)
A method for manufacturing a solid-state imaging device according to the fifth modification will be described with reference to FIGS. 18 and 19. FIG. 18A and 18B are diagrams for explaining the vacuum suction system of the collet of the bonding head in the fifth modification, FIG. 18A is a top view, and FIG. 18B is the AA line in FIG. 18(c) is a bottom view. 19A and 19B are diagrams for explaining that the work falls while tilting in four directions, FIG. 19A is a side view showing the state when the suction is released from the front side, and FIG. 19B is the rear side. 19(c) is a side view showing the state in which adsorption is released from the right side, and FIG. 19(d) is a side view showing the state in which adsorption is released from the left side. is a side view showing.

The collet 42 has four independent vacuum suction systems IA, IB, IC and ID. Each of the vacuum suction systems IA, IB, IC, and ID includes a plurality of suction ports 42a which are openings provided on the lower surface (bottom surface) of the collet 42, a horizontal suction portion 42b communicating between the plurality of suction ports 42a, and a vertical suction portion 42c communicating with the horizontal suction portion 42b. The lower surface of the collet 42 with which the upper surface of the workpiece DG abuts is divided into four areas corresponding to the four vacuum suction systems IA, IB, IC, and ID. The lower surface of the collet 42 is rectangular and divided into four areas by two diagonal lines. For example, the plurality of suction ports 42a of the vacuum suction system IB extend along one side (X-axis direction) of the lower surface of the collet 42, and the outer suction ports 42a are long and the inner suction ports 42a are short. .

When releasing the suction of the vacuum suction systems IB, IC, and ID on the front side and then releasing the suction of the vacuum suction system IA on the rear side, as shown in FIG. While being sucked, the front side of the work DG is released from the collet 42, and the work DG tilts with the front side down.

When releasing the suction of the vacuum suction systems ID, IA, and IB on the rear side and then releasing the suction of the vacuum suction system IC on the front side, as shown in FIG. While being sucked, the rear side of the work DG is released from the collet 42, and the work DG tilts with the rear side down.

When the vacuum suction systems IA, IB, and IC on the right side are released, and then the vacuum suction system ID on the left side is released, the left side of the workpiece DG is adsorbed to the collet 42, as shown in FIG. 19(c). While being held, the right side of the work DG is released from the collet 42, and the work DG tilts with the right side down.

When the vacuum suction systems IC, IA, and ID on the left side are released and then the vacuum suction system IB on the right side is released, the right side of the workpiece DG is adsorbed to the collet 42 as shown in FIG. While being held, the left side of the work DG is released from the collet 42, and the work DG tilts with the left side down.

It is possible to divide the vacuum adsorption system of the collet separately, shift the adsorption release timing, and drop the chip at any inclination. As a result, even if the upper surface of the paste adhesive PA is flat and horizontal, the work DG can be dropped obliquely so that the air can escape.

(Sixth modification)
A method for manufacturing a solid-state imaging device according to the sixth modification will be described with reference to FIGS. 19 and 20. FIG. FIGS. 20A and 20B are diagrams for explaining the vacuum suction system of the collet of the bonding head in the sixth modification, FIG. 20A being a top view and FIG. 20B being a bottom view.

The collet 42 has four independent vacuum suction systems IA, IB, IC and ID. Each of the vacuum suction systems IA, IB, IC, and ID includes a plurality of suction ports 42a, which are openings provided on the lower surface (bottom surface) of the collet 42, and a plurality of horizontal suction portions 42b communicating between the plurality of suction ports 42a. and a plurality of vertical suction portions 42c communicating with the horizontal suction portion 42b. The lower surface of the collet 42 with which the upper surface of the workpiece DG abuts is divided into four areas corresponding to the four vacuum suction systems IA, IB, IC, and ID. The lower surface of the collet 42 is rectangular and divided into four areas by two straight lines passing through the midpoints of two opposing sides. For example, a plurality of suction ports 42a are arranged in a grid pattern along the sides of the lower surface of the collet 42, and the vertical suction portions 42c and the suction ports 42a located at the corners of the collet 42 are linearly communicated by the horizontal suction portions 42b. The other suction port 42a communicates with this horizontal suction portion 42b directly or via another horizontal suction portion 42b.

When releasing the suction of the vacuum suction systems IA and ID on the front side and then releasing the suction of the vacuum suction systems IB and IC on the rear side, as shown in FIG. While being sucked, the front side of the work DG is released from the collet 42, and the work DG tilts with the front side down.

When releasing the suction of the vacuum suction systems IB and IC on the rear side and then releasing the suction of the vacuum suction systems IA and ID on the front side, as shown in FIG. While being sucked, the rear side of the work DG is released from the collet 42, and the work DG tilts with the rear side down.

When the vacuum suction systems IA and IB on the right side are released and then the vacuum suction systems IC and ID on the left side are released, the left side of the workpiece DG is adsorbed to the collet 42 as shown in FIG. 19(c). While being held, the right side of the work DG is released from the collet 42, and the work DG tilts with the right side down.

When the vacuum suction systems IC and ID on the left side are released and then the vacuum suction systems IA and IB on the right side are released, the right side of the workpiece DG is adsorbed to the collet 42 as shown in FIG. 19(d). While being held, the left side of the work DG is released from the collet 42, and the work DG tilts with the left side down.

As described above, the disclosure made by the present inventors has been specifically described based on the embodiments and modifications, but the present disclosure is not limited to the above embodiments and modifications, and can be variously modified. Needless to say.

For example, in the second to fourth modifications, examples were described in which one or two protrusions were provided on the annular paste adhesive PA, but three or more protrusions may be provided.

Also, in the fifth and sixth modifications, the example in which four vacuum suction systems are provided has been described, but two, three, or five or more vacuum suction systems may be provided.

Further, in the embodiment, an example of a glass chip as the work DG has been described, but the work in the semiconductor chip D including a light receiving element for light other than visible light (for example, infrared rays) may be a silicon chip.

Further, in the embodiment, an example in which the paste adhesive PA is applied in a circular shape on the semiconductor chip D has been described. Alternatively, the paste adhesive PA may be applied on the semiconductor chip D in a shape other than a ring shape (for example, an X-shape or a Z-shape).

Further, in the embodiment, an example of bonding the work DG picked up from the chip supply unit 1 by the bonding head 41 to the semiconductor chip D mounted on the substrate S is described. An intermediate stage section is provided, the work DG picked up from the chip supply section 1 by the pickup head is placed on the intermediate stage, the work DG is picked up again from the intermediate stage by the bonding head 41, and the semiconductor chip D mounted on the substrate S is mounted. Bonding may be used.

8... Control unit 10... Bonding device 41... Bonding head 42... Collet 91... Syringe D... Semiconductor chip DG... Work PA... Paste adhesive S... ·substrate

Claims (15)

a syringe for applying a paste adhesive onto a semiconductor chip mounted on a substrate;
a bonding head having a collet for sucking a work at its tip and placing the work on the paste adhesive applied by the syringe;
At a position where the highest position of the paste adhesive applied on the semiconductor chip and the work are within a predetermined range, the adsorption of the work by the collet is released to remove the work in the paste form. a controller configured to drop onto the adhesive;
A bonding apparatus comprising: The bonding apparatus of claim 1,
The predetermined range is set based on pre-measured variations in inclination of the semiconductor chip with respect to the substrate and variations in the applied height of the paste adhesive. In the bonding apparatus of claim 2,
The bonding apparatus, wherein the predetermined range is more than 0 μm and 50 μm or less. In the bonding apparatus of claim 2,
The bonding apparatus, wherein the predetermined range is 0 μm. In the bonding apparatus of claim 4,
The bonding device, wherein the controller is configured to measure the highest height of the paste adhesive. a syringe for annularly applying a paste-like adhesive to a semiconductor chip mounted on a substrate;
a bonding head having a collet for sucking a work at its tip and placing the work on the paste adhesive applied by the syringe;
a control unit;
with
The control unit
providing a projecting portion when applying an annular paste-like adhesive onto the semiconductor chip with the syringe;
stopping the downward movement of the bonding head at a position where the lower surface of the workpiece contacts the protrusion;
A bonding apparatus configured to release suction of the work by the collet and drop the work onto the paste adhesive. In the bonding apparatus of claim 6,
The bonding apparatus, wherein the controller is configured to measure the height of the protrusion. In the bonding apparatus of claim 7,
The bonding apparatus has two or more protrusions on the paste adhesive. In the bonding apparatus of claim 6,
The bonding apparatus, wherein the protruding portion is a start point and an end point of application of the paste adhesive. In the bonding apparatus of claim 6,
The controller is configured to form the projecting portion by changing the discharge amount per unit time of the nozzle of the syringe or slowing down the moving speed of the nozzle. In the bonding apparatus of claim 7,
The die bonding apparatus, wherein the control unit is configured to measure the height of the protrusion using a sensor or an optical camera. The bonding apparatus according to claim 1 or 6,
The controller places the work in a state in which the surface of the semiconductor chip to which the paste adhesive is applied and the work are not parallel to each other so as to release the work. 13. The bonding apparatus of claim 12, wherein
The controller is configured to divide the vacuum suction system of the collet into a plurality of independent areas and shift the suction release timing for each of the areas. a step of loading a substrate having a semiconductor chip mounted thereon into a bonding apparatus having a bonding head having a collet for sucking a workpiece at its tip;
an application step of applying a paste adhesive to the semiconductor chip in a circular pattern;
a bonding step of placing the workpiece on the paste adhesive;
has
The bonding step includes:
stopping the downward movement of the bonding head at a position where the highest position of the paste adhesive applied on the semiconductor chip and the workpiece are separated by a predetermined distance;
A method of manufacturing a solid-state imaging device, wherein the suction of the work by the collet is released and the work is dropped onto the paste adhesive. a step of loading a substrate having a semiconductor chip mounted thereon into a bonding apparatus having a bonding head having a collet for sucking a workpiece at its tip;
an application step of applying a paste adhesive to the semiconductor chip in a circular pattern;
a bonding step of placing the workpiece on the paste adhesive;
has
In the applying step, a projecting portion is provided when applying an annular paste adhesive onto the semiconductor chip,
The bonding step includes:
stopping the downward movement of the bonding head at a position where the lower surface of the workpiece contacts the protrusion;
A method of manufacturing a solid-state imaging device, wherein the suction of the work by the collet is released and the work is dropped onto the paste adhesive.

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