TWI767181B - Coating sheet for metal mask and metal mask - Google Patents

Abstract

The present invention provides a metal mask sheet material that is easy to handle, can achieve thinning of the metal mask, and ideally can improve the productivity of the metal mask, and provides a metal mask using the metal mask sheet material. mask. The coating material for a metal mask of the present invention includes a base material layer containing iron containing at least one of Ni and Co in a range of 30 mass % or more and 50 mass % or less, in a cross-sectional view taken along the thickness direction. a base alloy; and a first carrier layer, which is crimped on one side of the base material layer, the base material layer and the first carrier layer can be etched by a homogeneous etchant, and the base material layer is etched compared to the first carrier layer Liquid is more resistant to corrosion. The metal mask of the present invention uses the above-mentioned coating material for a metal mask.

Description

Coating sheet for metal mask and metal mask

The present invention relates to a cladding sheet for a metal mask and a metal mask. In detail, the present invention relates to a clad sheet for a metal mask having a metal surface capable of forming a corrosion-resistant protective film against an etching solution, and a metal mask using the clad sheet for a metal mask, such as The present invention relates to a metal mask cladding plate for manufacturing a metal mask for an organic electroluminescence (Electro Luminesence, EL) element and a metal mask for an organic EL element.

For example, Patent Document 1 discloses a method of manufacturing a shielding jig (metal mask) containing a single type of metal for manufacturing an organic EL element. The metal mask is manufactured through the steps shown in FIG. 1 . In Fig. 1, step (a) is a raw material preparation step. In this raw material preparation step, a metal plate _100a of a single-layer structure containing a single type of metal and having a thickness T100 to be a metal mask is prepared. The metal plate 100a includes, for example, an Fe (iron)-Ni (nickel) alloy, and the Fe-Ni alloy contains about 36 mass % of Ni and about 64 mass % of Fe. The Fe-Ni alloy is a well-known 36 alloy, and the coefficient of linear expansion is as small as about 1.2×10 ⁻⁶ /°C. The thickness T ₁₀₀ of the metal plate 100a is, for example, 10 μm or more and 50 μm or less. Step (b) is the first coating step. In this first coating step, a protective film 101 for forming a predetermined etching pattern is formed on the first surface 100b of the metal plate 100a, and a protective film 102 for preventing etching is formed on the second surface 100c of the metal plate 100a. Step (c) is the first etching step. In this first etching step, the metal plate 100a is etched using an etching solution suitable for the Fe-Ni alloy. The portion of the first surface 100b including the Fe—Ni alloy that does not have the protective film 101 is etched by the first etching to form, for example, an etching hole 100d. Step (d) is the second coating step. In this second coating step, a protective film 103 for forming a predetermined etching pattern is formed on the second surface 100c of the metal plate 100a, and a protective film for preventing etching is formed on the first surface 100b and the etching hole 100d of the metal plate 100a 104. Step (e) is the second etching step. In this second etching step, the metal plate 100a is etched using an etching solution of the same quality as the etching solution used in the first etching step. The portion of the second surface 100 c including the Fe—Ni alloy that does not have the protective film 103 is etched by the second etching to form, for example, an etching hole 100 e. Step (f) is a finishing step. In this finishing step, the protective film 103 and the protective film 104 are removed, the entire surface of the metal plate 100 a is cleaned, and the metal mask 100 is finished. Through such a process, the metal mask 100 having, for example, a single-layer structure containing an Fe—Ni alloy having a mask pattern 100f and a thickness T100 approximately equal to that of the metal plate _100a is obtained using the metal plate 100a.

In addition, for example, Patent Document 2 discloses a method for producing a metal thick film metal mask for screen printing. The metal mask is manufactured through the steps shown in FIG. 2 . In Fig. 2, step (a) is a raw material preparation step. In this raw material preparation step, a cladding plate 200a having a two-layer structure formed by bonding two metals to be a metal mask is prepared. The thickness of the coating material 200a is not described in Patent Document 2, but it is considered that the coating material 200a has a thickness T ₂₀₀ corresponding to the thick film metal mask. The cladding sheet 200a includes a first layer 201 including, for example, copper, and a second layer 202 including a different type from the first layer 201, such as stainless steel. In addition, the etching solution suitable for copper and the etching solution suitable for stainless steel are heterogeneous, so the first layer 201 containing copper is not etched by the etching solution suitable for the second layer containing stainless steel, and the second layer 202 containing stainless steel is not etched by An etchant suitable for etching of the first layer 201 containing copper. Step (b) is a coating step. In this coating step, a protective film 203 for forming a predetermined etching pattern is formed on the surface 201 a of the first layer 201 , and a protective film 204 for forming a predetermined etching pattern is formed on the surface 202 a of the second layer 202 . Step (c) is the first etching step. In this first etching step, the surface 201a of the first layer 201 is etched using an etchant suitable for copper. By the first etching, the surface 201a of the first layer 201 containing copper, which does not have the protective film 203, is partially etched to form, for example, an etching hole 201b. At this time, the portion of the surface 202a that does not have the protective film 204 of the second layer 202 containing stainless steel is not etched. Step (d) is the second etching step. In this second etching step, the surface 202a of the second layer 202 is etched using an etching solution suitable for stainless steel, which is different from that in the first etching step. By the second etching, the surface 202a of the second layer 202 made of stainless steel, which does not have the protective film 204, is partially etched to form, for example, etching holes 202b. At this time, the etching hole 201b of the first layer 201 containing copper without the protective film 203 is not etched. Step (e) is a finishing step. In this finishing step, the protective film 203 and the protective film 204 are removed, and the entire surface of the covering plate 200 a is cleaned to form a metal mask 200 . Through such a process, the cladding plate 200a is used to obtain, for example, a metal mask ₂₀₀ having a mask pattern 200f and a thickness T200 approximately equal to that of the cladding plate 200a, and a two-layered metal mask 200 including copper and stainless steel.

[Prior Art Literature]

[Patent Literature]

[Patent Document 1] Japanese Patent No. 6432072

[Patent Document 2] Japanese Patent Publication No. 62-21629

In recent years, further refinement of the mask pattern has been desired. Therefore, it is necessary to further reduce the thickness of the metal mask. The thickness of the target metal mask is, for example, 20 μm or less, preferably 15 μm or less. The thickness T ₁₀₀ of the single-layer structure metal plate 100a is, for example, 10 μm or more and 50 μm or less, but such a thin metal plate is prone to defects such as wrinkles and bending. For example, although it is technically possible to further reduce the thickness of a metal plate with a thickness of 20 μm, it is difficult to handle a metal plate that is simply reduced in thickness due to a decrease in mechanical strength. It can be considered that the cladding sheet 200a of the above-mentioned two-layer structure has a thickness corresponding to that of the thick film metal mask. If the thickness of the coated sheet with such a two-layer structure is further reduced simply, the asymmetry of the layer structure in the thickness direction (Z direction shown in FIG. 2 ) causes the coated sheet to have large warpage. Therefore, it is technically difficult to obtain a clad sheet with a thickness of 20 μm or less. Coated sheets with large warpage are difficult to handle and also difficult to manufacture metal masks. Under such circumstances, it is necessary to develop a metal mask sheet material that can further reduce the thickness of the metal mask.

When developing the sheet metal for a metal mask, it is desirable to ensure that the productivity of the metal mask is equal to that in the past, and it is more desirable to improve the productivity of the metal mask, in addition to the reduction in thickness and the facilitation of handling. In the above-described manufacturing method of a metal mask using a single type of metal plate 100a, at least two coating steps and two etching steps are required. In addition, in the above-mentioned method of manufacturing a metal mask using a two-layer structure covering the sheet 200a formed by bonding different kinds of metals, compared with the method of using a single type of metal sheet 100a, the number of coating steps can be reduced . However, even in the method of using the coating plate 200a with a two-layer structure, at least two etching steps are required to form the mask pattern 200f, and the etching solution used in each etching step cannot be shared. Therefore, the preferable change of the sheet material for a metal mask can change the manufacturing process of a metal mask preferably, and there exists a possibility that the productivity of a metal mask may be improved.

An object of the present invention is to provide a metal mask sheet material which is easy to handle, can achieve thinning of the metal mask, and ideally improves the productivity of the metal mask, and provides a metal mask sheet material using the metal mask sheet material. metal mask.

The inventors of the present invention found that the above problem can be solved by joining two metals that can be etched by a homogeneous etchant in a clad sheet of a two-layer structure formed by joining two metals, and came up with the idea of The structure of the invention of the coating sheet for metal masks.

One invention of the coating material for a metal mask, in a cross-sectional view taken along the thickness direction, includes a base material layer containing iron containing at least one of Ni and Co in a range of 30 mass % or more and 50 mass % or less. base alloy; and a first carrier layer, which is crimped on one side of the base material layer, and the base material layer and the first carrier layer can be etched by a homogeneous etchant, and the base material layer is Compared with the first carrier layer, it has higher corrosion resistance to the etching solution. In the above invention, it is preferable to perform etching using a homogeneous etching solution under the same environment, and when the etching loss of the base material layer is M _b , and the etching loss of the first carrier layer is M _c1 , the The base material layer and the first carrier layer satisfy the relationship of M _b /M _c1 ≦0.9.

In addition, one invention of the coating material for a metal mask, when viewed in a cross-sectional view along the thickness direction, includes a base material layer containing at least one of Ni and Co in a range of 30 mass % or more and 50 mass % or less. an iron-based alloy; a first carrier layer, crimped on one side of the base material layer; and a second carrier layer, crimped on the other side of the base material layer, and the base material layer, all The first carrier layer and the second carrier layer can be etched by a homogeneous etchant, and the base material layer is more resistant to the etchant than the first carrier layer and the second carrier layer. High corrosion resistance. In the above invention, it is preferable to perform etching using a homogeneous etching solution under the same environment, and let the corrosion loss of the base material layer be M _b , the corrosion loss of the first carrier layer is M _c1 , and When the etching loss of the second carrier layer is set as M _c2 , the base material layer, the first carrier layer and the second carrier layer satisfy M _b /M _c1 ≦0.9 and M _b /M _c2 ≦0.9 relation.

The structure of the invention of a metal mask was conceived using any of the said coating materials for metal masks. That is, one invention of a metal mask is to use any one of the metal mask cladding materials including the base material layer and the first carrier layer, or the base material layer, the first support layer and the The one of the metal masks of the second carrier layer is formed with a cladding plate, and includes the iron-based alloy constituting the base material layer.

In addition, one invention of a metal mask is to use any one of the metal mask cladding materials including the base material layer and the first carrier layer, or the base material layer, the first support layer and the The one of the metal masks of the second carrier layer is formed by covering a plate, and includes: a first metal layer including the iron-based alloy constituting the base material layer; and a second metal layer including The metal constituting the first carrier layer, and the metal mask is formed by bonding the first metal layer and the second metal layer.

In addition, one invention of a metal mask is formed using any one of the cladding materials for a metal mask including the base material layer, the first carrier layer, and the second carrier layer, and includes: a first a metal layer including the iron-based alloy constituting the substrate layer; a second metal layer including the metal constituting the first carrier layer; and a third metal layer including the metal constituting the second support layer, And the metal mask is formed by joining the second metal layer, the first metal layer and the third metal layer in sequence.

ADVANTAGE OF THE INVENTION According to this invention, the cladding material for metal masks which is easy to handle and can achieve thinning of a metal mask can be obtained. By using the above-mentioned coating material for a metal mask, a metal mask which is easy to handle and thinner than before can be obtained. In addition, when the above-mentioned coating material for a metal mask is used, the productivity of the metal mask can be expected to be improved.

The present invention will be described with reference to an embodiment in which the coating material for a metal mask according to the present invention is embodied.

<First Embodiment> FIG. 3 shows the first embodiment of the coating material for a metal mask according to the present invention. FIG. 3 is a cross-sectional view of a covering sheet 1S for a metal mask (hereinafter referred to as “covering sheet 1S”) cut along the thickness direction (Z direction).

The cladding sheet 1S has a two-layer structure in a cross-sectional view cut along the thickness direction. The cladding sheet 1S (thickness T _1S ) includes a base material layer 10 (thickness t0 ), and a first carrier layer 11 (thickness t1 ) crimped to one side ( Z1 side ) of the base material layer 10 . The crimping form of the base material layer 10 and the first carrier layer 11 is obtained, for example, by superimposing the sheet material for constituting the base material layer 10 and the sheet material for constituting the first support layer 11 in a superimposed state. Roll pressing (clad rolling), diffusion annealing if necessary. In addition, the covering sheet 1S is an example of the "covering sheet for metal mask" within the scope of the patent application, the base material layer 10 is an example of the "substrate layer" within the scope of the patent application, and the first carrier layer 11 is the scope of the patent application. An example of a "first carrier layer".

The base material layer 10 constituting the cladding sheet 1S can serve as the main body of the metal mask. In this case, either a single-layer structure metal mask including the base material layer 10 part, or a two-layer structure metal mask including the base material layer 10 part and the first carrier layer 11 part can be obtained. As described above, the target thickness of the metal mask is, for example, 20 μm or less, and desirably 15 μm or less. In contrast to the above target, from the viewpoint of thinning, the upper limit of the thickness T _1S of the cladding sheet 1S or the upper limit of the thickness t0 of the base material layer 10 when the base material layer 10 part is used as the main body of the metal mask The limit value is preferably 20 μm or less, more preferably 15 μm or less, and further preferably 10 μm or less. In addition, from the viewpoint of ease of handling, the lower limit value of the thickness T _1S of the coating sheet 1S or the lower limit value of the thickness t0 of the base material layer 10 when the base material layer 10 part is used as the main body of the metal mask It is preferably 1 μm or more, more preferably 3 μm or more, and further preferably 5 μm or more. The thinner the thickness T _1S of the cladding sheet 1S, or the thinner the thickness t0 of the base material layer 10 when the base material layer 10 is the main body of the metal mask, the more the amount of side etching of the etching is suppressed. Therefore, by etching The dimensional accuracy of the mask pattern such as the formed etching hole is improved, and a metal mask having a higher finer mask pattern can be obtained.

The base material layer 10 constituting the cladding sheet 1S includes an iron-based alloy. This iron-based alloy contains at least one of Ni (nickel) and Co (cobalt) in a range of 30 mass % or more and 50 mass % or less. The remainder other than Ni and Co may be Fe (iron) and inevitable impurities, or may further contain one or more additional elements. Further, in the iron-based alloy containing Ni and Co, it is preferable that Co is 10 mass % or less (that is, Ni is 20 mass % or more and 40 mass % or less). An iron-based alloy containing at least one of Ni and Co in a range of 30 mass % or more and 50 mass % or less with respect to Fe is often used to suppress heating during vapor deposition, for example, when a metal mask for an organic EL element is used. The effective coefficient of linear expansion in terms of deformation (strain) is small, and it is suitable for forming a sheet metal for a metal mask. The iron-based alloy may contain elements (additional elements) other than Ni and Co in a range of 10 mass % or less. The additive elements are, for example, Mn (manganese), Mo (molybdenum), Nb (niobium), Cr (chromium), and the like. Iron-based alloys containing these additive elements in the range of 0 mass % or more and 10 mass % or less may have 0.2% endurance, tensile strength, elongation, Young's modulus, hardness, coefficient of linear expansion, etc. as a constituent metal mask The mechanical strength and various properties are preferred by the metal material of the sheet. The base material layer 10 containing the iron-based alloy can be etched by a common etching solution (eg, ferric chloride solution, etc.) suitable for the iron-based alloy.

The first carrier layer 11 constituting the cladding sheet 1S is crimped to one side (the Z1 side) of the base material layer 10 . The first carrier layer 11 is effective for reinforcing the thinned base material layer 10 serving as the main body of the metal mask, and is effective for improving the mechanical strength of the thin coating sheet 1S. The first carrier layer 11 serves as a carrier for the thinned base material layer 10 , facilitates handling of the thinned base material layer 10 , and suppresses large warpage of the coating sheet 1S including the base material layer 10 . And contribute to the stabilization of etching. In addition, the first carrier layer 11 can serve as the main body of the metal mask similarly to the base material layer 10 . In this case, either a single-layer structure metal mask including the first carrier layer 11 part, or a two-layer structure metal mask including the first support layer 11 part and the base layer 10 part can be obtained. The thickness t1 of the first carrier layer 11 may be set in consideration of various properties of the entire coating sheet 1S in addition to various properties of the base material layer 10 . For example, from the viewpoint of ease of handling, when the purpose of reinforcement of the base material layer 10 is made, the thickness t1 of the first carrier layer 11 is preferably 5 μm or more and 100 μm or less, and more preferably 20 μm or more and 100 μm or less. . For example, when the first carrier layer 11 is used as the main body of the metal mask, the upper limit of the thickness t1 of the first carrier layer 11 is preferably 20 μm or less, more preferably 15 μm or less, and further preferably 10 μm or less.

The first carrier layer 11 can be etched by an etchant that can etch the base material layer 10 . That is, the base material layer 10 and the first carrier layer 11 can be simultaneously etched by a homogeneous etching solution (eg, ferric chloride solution, etc.). In the present invention, when the base material layer 10 and the first carrier layer 11 can be etched at the same time, as long as the base material layer 10 has higher corrosion resistance to the etchant than the first carrier layer 11 . Therefore, when the etching of the base material layer 10 and the first carrier layer 11 is started simultaneously with the etchant, the base material layer 10 is less easily etched than the first carrier layer 11 , so that the base material layer 10 can be The etch rate of the first carrier layer 11 is slower than that of the first carrier layer 11 . Therefore, for example, when etching holes are simultaneously formed in the base material layer 10 and the first carrier layer 11 , the depth of the etching holes formed from the surface (Z2 side) of the base material layer 10 to the Z1 side is higher than that from the surface of the first carrier layer 11 . (Z1 side) The depth of the etching hole formed toward Z2 side is shallower. If a metal mask sheet (clad sheet 1S) that can obtain such a difference in the depth of the etched holes is used, a metal mask having a mask pattern in which holes are arranged on one of the surfaces can be formed is different from the depth of the hole arranged on the other side.

In addition, it is preferable to use a homogeneous etchant to etch the coating plate 1S under the same environment, and let the corrosion loss of the base layer 10 be M _b , and the corrosion loss of the first carrier layer 11 to be M _c1 , the basic The material layer 10 and the first carrier layer 11 satisfy the relationship of M _b /M _c1 ≦0.9. When the cladding sheet 1S satisfying the above relationship is simultaneously etching the base material layer 10 and the first carrier layer 11 , the etching rate of the base material layer 10 can be reliably made slower than the etching rate of the first carrier layer 11 . Thus, for example, when etching holes are to be formed at the same time, the depth of the etching holes formed from the surface (Z2 side) of the base layer 10 to the Z1 side can be reliably increased from the depth of the etching holes formed from the surface (Z1 side) of the first carrier layer 11 to the Z1 side. The depth of the etching hole formed on the Z2 side is shallower. In addition, the simultaneously etched base material layer 10 and the first carrier layer 11 satisfy the relationship of M _b /M _c1 >0 (M _b >0, M _c1 >0).

As an example, it can be confirmed that when the plate A and the plate B are etched with a ferric chloride solution (aqueous solution) having a concentration of 40% by mass, respectively, the corrosion loss (M _A ) of the plate A and the corrosion loss (M ) of the plate B are confirmed. _B ) ratio (M _A /M _B ) becomes about 0.89, wherein the sheet A contains an iron-based alloy containing about 32 mass % Ni and about 5.5 mass % Co, and the sheet B contains about 36 mass % Ni iron-based alloys. When the sheet material A having the above relationship is used for the base material layer 10 (thickness t0 ) and the sheet material B is used for the first carrier layer 11 (thickness t1 = t0 ) to form the cladding sheet material 1S, the M _b /M _c1 becomes about 0.89. Therefore, the base material layer 10 and the first carrier layer 11 satisfy the relationship of M _b /M _c1 ≦0.9.

The cladding sheet 1S preferably has mechanical strength and various properties suitable for metal masks, such as 0.2% proof strength, tensile strength, elongation, Young's modulus, hardness, and coefficient of linear expansion. For example, from the viewpoint of facilitating handling, the cladding sheet 1S having a large tensile strength and a large Young's modulus is preferable. In this case, it is particularly preferable that the cladding sheet 1S has a tensile strength of 700 MPa or more and a Young's modulus of 100 GPa or more of the base material layer 10 serving as the main body of the metal mask. In addition, for example, from the viewpoint of suppressing thermal deformation (strain) during vapor deposition when a metal mask for organic EL elements is used, it is preferable that the cladding sheet 1S has less warpage due to heating, and it is preferable to constitute the cladding sheet. The difference between the linear expansion coefficient of the base material layer 10 of 1S and the linear expansion coefficient of the first carrier layer 11 is small. In this case, the linear expansion coefficient of the base material layer 10 is preferably 5 ppm/°C or less, and the linear expansion coefficient of the first carrier layer 11 is preferably within ±2 ppm/°C relative to the linear expansion coefficient of the base material layer 10 .

<Second Embodiment> A second embodiment of the covering sheet for a metal mask according to the present invention is shown in FIG. 4 . In addition, the symbols shown in FIG. 3 are referred to in FIG. 4 for convenience. FIG. 4 is a cross-sectional view of a covering sheet 2S for a metal mask (hereinafter referred to as “covering sheet 2S”) cut along the thickness direction (Z direction). The cladding sheet 2S shown in FIG. 4 is different from the cladding sheet 1S shown in FIG. 3 in the number of layers. The base material layer 10 and the first carrier layer 11 provided in the coating sheet 2S and the base material layer 10 and the first carrier layer 11 provided in the coating sheet 1S may or may not have the same structure.

The cladding sheet 2S has a three-layer structure in a cross-sectional view cut along the thickness direction. The cladding sheet 2S (thickness T _2S ) includes a base material layer 10 (thickness t0 ), a first carrier layer 11 (thickness t1 ) crimped on one side (Z1 side) of the base material layer 10 , and a base material The second carrier layer 12 (thickness t2 ) on the other side (Z2 side) of the material layer 10 . The thicknesses of the first carrier layer 11 and the second carrier layer 12 shown in FIG. 4 are approximately the same (t1=t2). The crimping form of the base material layer 10 , the first carrier layer 11 , and the second carrier layer 12 is obtained, for example, by combining the sheet material for constituting the base material layer 10 and the sheet material for constituting the first support layer 11 And the sheet material used to constitute the second carrier layer 12 is rolled in a superimposed state (clad rolling), and diffusion annealing is carried out if necessary. In addition, the covering sheet 2S is an example of the "covering sheet for metal mask" within the scope of the patent application, the base material layer 10 is an example of the "substrate layer" within the scope of the patent application, and the first carrier layer 11 is the scope of the patent application. An example of the "first carrier layer", and the second carrier layer 12 is an example of the "second carrier layer" within the scope of the patent application.

The base material layer 10 constituting the cladding sheet 2S can serve as the main body of the metal mask. In this case, a metal mask with a single-layer structure including a portion of the base material layer 10 can be obtained, a metal mask with a two-layer structure including a portion of the base material layer 10 and a portion of the first carrier layer 11 can be obtained, or A metal mask with a two-layer structure including a base material layer 10 part and a second carrier layer 12 part is obtained, and a three-layer structure including a first support layer 11 part, a base material layer 10 part and a second support layer 12 part can also be obtained. metal mask. As described above, the target thickness of the metal mask is, for example, 20 μm or less, and desirably 15 μm or less. In contrast to the above target, from the viewpoint of thinning, the upper limit value of the thickness T _2S of the cladding sheet 2S or the upper limit of the thickness t0 of the base material layer 10 when the base material layer 10 part is used as the main body of the metal mask The limit value is preferably 20 μm or less, more preferably 15 μm or less, and further preferably 10 μm or less. In addition, from the viewpoint of ease of handling, the lower limit value of the thickness T _2S of the covering plate 2S or the lower limit value of the thickness t0 of the base material layer 10 when the base material layer 10 part is used as the main body of the metal mask It is preferably 1 μm or more, more preferably 3 μm or more, and further preferably 5 μm or more. The thinner the thickness T _2S of the cladding plate 2S, or the thinner the thickness t0 of the base material layer 10 when the base material layer 10 is used as the main body of the metal mask, the more the amount of side etching of the etching is suppressed. The dimensional accuracy of mask patterns such as etched holes is improved, and a metal mask with a higher finer mask pattern can be obtained.

The base material layer 10 constituting the cladding sheet 2S contains an iron-based alloy. This iron-based alloy contains at least one of Ni and Co in a range of 30 mass % or more and 50 mass % or less. The remainder other than Ni and Co may be Fe and inevitable impurities, or may contain one or more additional elements. Further, in the iron-based alloy containing Ni and Co, it is preferable that Co is 10 mass % or less (that is, Ni is 20 mass % or more and 40 mass % or less). An iron-based alloy containing at least one of Ni and Co in a range of 30 mass % or more and 50 mass % or less with respect to Fe is often used to suppress heating during vapor deposition, for example, when a metal mask for an organic EL element is used. The effective coefficient of linear expansion in terms of deformation (strain) is small, and it is suitable for forming a sheet metal for a metal mask. The iron-based alloy may contain elements (additional elements) other than Ni and Co in a range of 10 mass % or less. The additive elements are, for example, Mn, Mo, Nb, Cr, and the like. Iron-based alloys containing these additive elements in the range of 0 mass % or more and 10 mass % or less may have 0.2% endurance, tensile strength, elongation, Young's modulus, hardness, coefficient of linear expansion, etc. as a constituent metal mask The mechanical strength and various properties are preferred by the metal material of the sheet. The base material layer 10 containing the iron-based alloy can be etched by a common etching solution (eg, ferric chloride solution, etc.) suitable for the iron-based alloy.

The first carrier layer 11 constituting the cladding sheet 2S is crimped to one side (the Z1 side) of the base material layer 10 . In addition, the second carrier layer 12 constituting the cladding sheet 2S is press-bonded to the other side (Z2 side) of the base material layer 10 . The first carrier layer 11 and the second carrier layer 12 are effective for reinforcing the thinned base material layer 10 serving as the main body of the metal mask, and are effective for improving the mechanical strength of the thin-walled cladding sheet 2S. The first carrier layer 11 and the second carrier layer 12 serve as the carrier of the thinned base material layer 10 , which facilitates the handling of the thinned base material layer 10 and facilitates the covering of the base material layer 10 . Stabilization of etching of the cladding sheet 2S. In addition, the 1st carrier layer 11 and the 2nd carrier layer 12 can serve as the main body of a metal mask similarly to the base material layer 10. In this case, a metal mask with a single-layer structure including a portion of the first carrier layer 11 can be obtained, a metal mask with a single-layer structure including a portion of the second carrier layer 12 can be obtained, and a first carrier can also be obtained. A metal mask with a two-layer structure including a part of the layer 11 and a part of the base material layer 10 can also be obtained as a metal mask with a two-layer structure including a part of the second carrier layer 12 and a part of the base material layer 10, and a metal mask with a two-layer structure including a part of the first carrier can also be obtained The metal mask of the three-layer structure of the layer 11 part, the base material layer 10 part and the second carrier layer 12 part. From the viewpoint of ease of handling, when the purpose of reinforcing the base layer 10 is to be, the thickness t1 of the first carrier layer 11 and the thickness t2 of the second carrier layer 12 are preferably 5 μm or more and 100 μm or less, respectively, and more preferably It is preferably 20 μm or more and 100 μm or less. When the first carrier layer 11 part or the second carrier layer 12 part is used as the main body of the metal mask, the upper limit value of the thickness t1 of the first carrier layer 11 and the upper limit value of the thickness t2 of the second carrier layer 12 are respectively preferable 20 μm or less, more preferably 15 μm or less, further preferably 10 μm or less.

Both the first carrier layer 11 and the second carrier layer 12 can be etched with an etchant that can etch the base material layer 10 . That is, the base material layer 10 and the first carrier layer 11 , the base material layer 10 and the second support layer 12 , and the first support layer 11 and the second support layer 12 can be combined by a homogeneous etching solution (eg, ferric chloride solution, etc.) ) simultaneously etched. In the present invention, when the base material layer 10 and the first carrier layer 11 can be etched simultaneously, when the base material layer 10 and the second carrier layer 12 can be etched simultaneously, and the first carrier layer 11 and the second carrier layer 12 can be etched simultaneously As long as the base material layer 10 has higher corrosion resistance to the etching solution than the first carrier layer 11 and the second carrier layer 12 , respectively. In addition, the first carrier layer 11 may have higher corrosion resistance to the same etchant than the second carrier layer 12 , or the second carrier layer 12 may be more resistant to the same etchant than the first carrier layer 11 . High corrosion resistance. Thus, for example, if the first carrier layer 11 and the second carrier layer 12 are made of the same material and have the same thickness (t1=t2), the first carrier layer 11 and the second carrier layer 12 are half-etched at the same time, so that the The first carrier layer 11 and the second carrier layer 12 can be simultaneously removed to expose the surface of one side (Z1 side) and the surface of the other side (Z2 side) of the base material layer 10 at the same time, thereby obtaining the base material layer 10 single-layer structure of sheet metal. In this case, by adjusting the half-etching conditions, the first carrier layer 11 and the second carrier layer 12 can each have a predetermined thickness and have a three-layer structure covering the substrate layer 10 on both sides. In addition, if the first carrier layer 11 and the second carrier layer 12 are made of different materials, it is also possible to use only the first carrier layer 11 or the second carrier layer 12 which has higher corrosion resistance than the etching solution. One remains with a predetermined thickness. In this case, only one of the first carrier layer 11 or the second carrier layer 12 has a predetermined thickness and is provided with the base material layer 10 and a clad sheet with a two-layer structure can be obtained.

Compared with the first carrier layer 11 and the second carrier layer 12 , the base material layer 10 has higher corrosion resistance to the etching solution. Therefore, when using the etchant to start the etching of the clad sheet with the two-layer structure, the base material layer 10 is more difficult to be etched than the first carrier layer 11 (or the second carrier layer 12 ), so The etching rate of the base material layer 10 can be made slower than the etching rate of the first carrier layer 11 (or the second carrier layer 12 ). Therefore, for example, when etching holes are simultaneously formed in a cladding sheet with a two-layer structure including the base material layer 10 and the first carrier layer 11 , the depth of the etching holes formed from the surface (Z2 side) of the base material layer 10 to the Z1 side It is shallower than the depth of the etching hole formed from the surface (Z1 side) of the first carrier layer 11 to the Z2 side. Alternatively, when etching holes are simultaneously formed on a cladding sheet with a two-layer structure including the base material layer 10 and the second carrier layer 12 , the depth ratio of the etching holes formed from the surface (Z1 side) of the base material layer 10 to the Z2 side The depth of the etching hole formed from the surface (Z2 side) of the second carrier layer 12 to the Z1 side is shallower. If a metal mask sheet (clad sheet 2S) that can obtain such a difference in the depth of the etched holes is used, a metal mask having a mask pattern in which holes are arranged on one of the surfaces can be formed is different from the depth of the hole arranged on the other side.

In addition, it is preferable to perform the etching of the cladding plate 2S using a homogeneous etching solution under the same environment, and let the corrosion loss of the base layer 10 be M _b , the corrosion loss of the first carrier layer 11 be M _c1 , and the first When the etching loss of the two carrier layers 12 is set to M _c2 , the base layer 10 , the first carrier layer 11 and the second carrier layer 12 satisfy the relationship of M _b /M _c1 ≦0.9 and M _b /M _c2 ≦0.9. The cladding sheet 2S satisfying the above relationship can reliably make the etching rate of the base material layer 10 slower than the etching rate of the first carrier layer 11 when the base material layer 10 and the first carrier layer 11 are etched at the same time, or can be etched at the same time. When the base material layer 10 and the second carrier layer 12 are simultaneously etched, the etching rate of the base material layer 10 is reliably made slower than the etching rate of the second carrier layer 12 . Thus, for example, when etching holes are to be formed at the same time, the depth of the etching holes formed from the surface (Z2 side) of the base layer 10 to the Z1 side can be reliably increased from the depth of the etching holes formed from the surface (Z1 side) of the first carrier layer 11 to the Z1 side. The depth of the etching hole formed on the Z2 side is shallower, or the depth of the etching hole formed from the surface (Z1 side) of the base layer 10 to the Z2 side can be reliably made deeper than the depth of the etching hole formed from the surface (Z2 side) of the second carrier layer 12 The depth of the etching hole formed on the Z1 side is shallower. In addition, the simultaneously etched base material layer 10 and the first carrier layer 11 satisfy the relationship of M _b /M _c1 >0 (M _b >0, M _c1 >0), or the simultaneously etched base material layer 10 and the second The carrier layer 12 satisfies the relationship of M _b /M _c2 >0 (M _b >0, M _c2 >0). In addition, the first carrier layer 11 and the second carrier layer 12 may satisfy the relationship of M _c1 /M _c2 ≦0.9, or may satisfy the relationship of M _c2 /M _c1 ≦0.9.

The cladding sheet 2S preferably has mechanical strength and various properties suitable for metal masks, such as 0.2% strength, tensile strength, elongation, Young's modulus, hardness, and coefficient of linear expansion. For example, from the viewpoint of facilitating handling, the cladding sheet 2S having a large tensile strength and a large Young's modulus is preferable. In this case, it is particularly preferable that the cladding sheet 2S has a tensile strength of 700 MPa or more and a Young's modulus of 100 GPa or more of the base material layer 10 serving as the main body of the metal mask. In addition, for example, from the viewpoint of suppressing thermal deformation (strain) during vapor deposition when using a metal mask for organic EL elements, it is preferable that the cladding sheet 2S has less warpage due to heating, and it is preferable to constitute the cladding sheet. The difference between the linear expansion coefficient of the base material layer 10, the linear expansion coefficient of the first carrier layer 11, and the linear expansion coefficient of the second carrier layer 12 of 2S is small. In this case, the linear expansion coefficient of the base material layer 10 is preferably 5 ppm/°C or less, and the linear expansion coefficient of the first carrier layer 11 and the linear expansion coefficient of the second carrier layer 12 are preferably relative to the linear expansion coefficient of the base material layer 10 , respectively. The expansion coefficient is within ±2 ppm/°C.

<Third Embodiment> A third embodiment of the cladding sheet for a metal mask according to the present invention is shown in FIG. 5 . In addition, in FIG. 5, the symbols shown in FIG. 3 and FIG. 4 are used for convenience. FIG. 5 is a cross-sectional view of a covering sheet 3S for a metal mask (hereinafter referred to as “covering sheet 3S”) cut along the thickness direction (Z direction). The thickness of the second carrier layer 12 of the cladding plate 3S shown in FIG. 5 is different from that of the cladding plate 2S shown in FIG. 4 (for convenience, the symbols of thickness are all expressed as t2 ). Except that the thickness t1 of the first carrier layer 11 and the thickness t2 of the second carrier layer 12 are different (t1>t2), the base material layer 10, the first carrier layer 11 and the second carrier layer 12 constituting the cladding sheet 3S are different from the structure. The base material layer 10 , the first carrier layer 11 and the second carrier layer 12 of the cladding sheet 2S may or may not have the same structure.

The cladding plate 3S has a three-layer structure in a cross-sectional view cut along the thickness direction. The cladding plate 3S (thickness T _3S ) includes a base material layer 10 (thickness t0 ), a first carrier layer 11 (thickness t1 ) crimped to one side (Z1 side) of the base material layer 10 , and a base material The second carrier layer 12 (thickness t2 ) on the other side (Z2 side) of the material layer 10 . The thicknesses of the first carrier layer 11 and the second carrier layer 12 shown in FIG. 5 are different (t1>t2). In addition, the cladding plate 3S can, for example, make the thickness t2 of the second carrier layer 12 thicker than the thickness t1 of the first carrier layer 11 (t1<t2). The crimping form of the base material layer 10 , the first carrier layer 11 , and the second carrier layer 12 is obtained, for example, by combining the sheet material for constituting the base material layer 10 and the sheet material for constituting the first support layer 11 And the sheet material used to constitute the second carrier layer 12 is rolled in a superimposed state (clad rolling), and diffusion annealing is carried out if necessary. In addition, the cladding sheet 3S is an example of the "cladding sheet for metal mask" within the scope of the patent application, the base material layer 10 is an example of the "substrate layer" within the scope of the patent application, and the first carrier layer 11 is the scope of the patent application. An example of the "first carrier layer", and the second carrier layer 12 is an example of the "second carrier layer" within the scope of the patent application.

The base material layer 10 constituting the cladding sheet 3S can serve as the main body of the metal mask. In this case, a metal mask with a single-layer structure including a portion of the base material layer 10 can be obtained, a metal mask with a two-layer structure including a portion of the base material layer 10 and a portion of the first carrier layer 11 can be obtained, or A metal mask with a two-layer structure of the base material layer 10 part and the second carrier layer 12 part can be obtained, and a three-layer structure including the first support layer 11 part, the base material layer 10 part and the second support layer 12 part can also be obtained. metal mask. As described above, the target thickness of the metal mask is, for example, 20 μm or less, and desirably 15 μm or less. In contrast to the above target, from the viewpoint of thinning, the upper limit of the thickness T _3S of the clad sheet 3S or the upper limit of the thickness t0 of the base material layer 10 when the base material layer 10 part is used as the main body of the metal mask The limit value is preferably 20 μm or less, more preferably 15 μm or less, and further preferably 10 μm or less. In addition, from the viewpoint of easiness of handling, the lower limit value of the thickness T _3S of the covering plate 3S or the lower limit value of the thickness t0 of the base material layer 10 when the base material layer 10 part is used as the main body of the metal mask It is preferably 1 μm or more, more preferably 3 μm or more, and further preferably 5 μm or more. The thinner the thickness T _3S of the cladding sheet 3S, or the thinner the thickness t0 of the base material layer 10 when the base material layer 10 is used as the main body of the metal mask, the more the amount of side etching of the etching is suppressed. The dimensional accuracy of mask patterns such as etched holes is improved, and a metal mask with a higher finer mask pattern can be obtained.

The base material layer 10 constituting the cladding sheet 3S contains an iron-based alloy. This iron-based alloy contains at least one of Ni and Co in a range of 30 mass % or more and 50 mass % or less. The remainder other than Ni and Co may be Fe and unavoidable impurities, or may further contain one or more additional elements. Further, in the iron-based alloy containing Ni and Co, it is preferable that Co is 10 mass % or less (that is, Ni is 20 mass % or more and 40 mass % or less). An iron-based alloy containing at least one of Ni and Co in a range of 30 mass % or more and 50 mass % or less with respect to Fe is often used to suppress heating during vapor deposition, for example, when a metal mask for an organic EL element is used. The effective coefficient of linear expansion in terms of deformation (strain) is small, and it is suitable for forming a sheet metal for a metal mask. The iron-based alloy may contain elements (additional elements) other than Ni and Co in a range of 10 mass % or less. The additive elements are, for example, Mn, Mo, Nb, Cr, and the like. Iron-based alloys containing these additive elements in the range of 0 mass % or more and 10 mass % or less may have 0.2% endurance, tensile strength, elongation, Young's modulus, hardness, coefficient of linear expansion, etc. as a constituent metal mask The mechanical strength and various properties are preferred by the metal material of the sheet. The base material layer 10 containing the iron-based alloy can be etched by a common etching solution (eg, ferric chloride solution, etc.) suitable for the iron-based alloy.

The first carrier layer 11 constituting the cladding sheet 3S is crimped to one side (the Z1 side) of the base material layer 10 . In addition, the second carrier layer 12 constituting the cladding sheet 3S is press-bonded to the other side (Z2 side) of the base material layer 10 . The first carrier layer 11 and the second carrier layer 12 are effective for reinforcing the thinned base material layer 10 serving as the main body of the metal mask, and are effective for improving the mechanical strength of the thin coating sheet 3S. The first carrier layer 11 and the second carrier layer 12 serve as the carrier of the thinned base material layer 10 , which facilitates the handling of the thinned base material layer 10 and facilitates the covering of the base material layer 10 . Stabilization of etching of the cladding sheet 3S. In addition, the 1st carrier layer 11 and the 2nd carrier layer 12 can serve as the main body of a metal mask similarly to the base material layer 10. In this case, a metal mask with a single-layer structure including a portion of the first carrier layer 11 can be obtained, a metal mask with a single-layer structure including a portion of the second carrier layer 12 can be obtained, and a first carrier can also be obtained. A metal mask with a two-layer structure including a part of the layer 11 and a part of the base material layer 10 can also be obtained as a metal mask with a two-layer structure including a part of the second carrier layer 12 and a part of the base material layer 10, and a metal mask with a two-layer structure including a part of the first carrier can also be obtained The metal mask of the three-layer structure of the layer 11 part, the base material layer 10 part and the second carrier layer 12 part. From the viewpoint of ease of handling, when the purpose of reinforcing the base layer 10 is to be, the thickness t1 of the first carrier layer 11 and the thickness t2 of the second carrier layer 12 are preferably 5 μm or more and 100 μm or less, respectively, and more preferably It is preferably 20 μm or more and 100 μm or less. When the first carrier layer 11 part or the second carrier layer 12 part is used as the main body of the metal mask, the upper limit value of the thickness t1 of the first carrier layer 11 and the upper limit value of the thickness t2 of the second carrier layer 12 are respectively preferable 20 μm or less, more preferably 15 μm or less, further preferably 10 μm or less.

Both the first carrier layer 11 and the second carrier layer 12 can be etched with an etchant that can etch the base material layer 10 . That is, the base material layer 10 and the first carrier layer 11 , the base material layer 10 and the second support layer 12 , and the first support layer 11 and the second support layer 12 can be combined by a homogeneous etching solution (eg, ferric chloride solution, etc.) ) simultaneously etched. In the present invention, when the base material layer 10 and the first carrier layer 11 can be etched simultaneously, when the base material layer 10 and the second carrier layer 12 can be etched simultaneously, and the first carrier layer 11 and the second carrier layer 12 can be etched simultaneously Each, as long as the base material layer 10 has higher corrosion resistance to the etchant than the first carrier layer 11 and the second carrier layer 12 . In addition, the first carrier layer 11 may have higher corrosion resistance to the same etchant than the second carrier layer 12 , or the second carrier layer 12 may be more resistant to the same etchant than the first carrier layer 11 . High corrosion resistance. Thus, for example, by simultaneously half-etching the first carrier layer 11 and the second carrier layer 12 having different thicknesses (eg, t1 > t2 ), part of the first carrier layer 11 and all of the second carrier layer 12 can be removed at the same time. Only the surface of one side (Z2 side) of the base material layer 10 is exposed, and the first carrier layer 11 having a predetermined thickness and having a two-layer structure on the other side (Z1 side) of the base material layer 10 is obtained. cladding sheet. In addition, such a two-layer structure cladding plate can also be obtained, for example, by the following method, that is, the first carrier layer 11 and the second carrier layer 12 are made of different materials, and only the materials with higher corrosion resistance to the etching solution are made. Either the first carrier layer 11 or the second carrier layer 12 remains with a predetermined thickness. In this case, by adjusting the half-etching conditions, it is also possible to obtain a cladding plate with a three-layer structure in which the first carrier layer 11 and the second carrier layer 12 have predetermined thicknesses and are provided on both sides of the base material layer 10 . .

Compared with the first carrier layer 11 and the second carrier layer 12 , the base material layer 10 has higher corrosion resistance to the etching solution. Therefore, when using the etchant to start the etching of the clad sheet with the two-layer structure, the base material layer 10 is more difficult to be etched than the first carrier layer 11 (or the second carrier layer 12 ), so The etching rate of the base material layer 10 can be made slower than the etching rate of the first carrier layer 11 (or the second carrier layer 12 ). Therefore, for example, when etching holes are simultaneously formed in a cladding sheet with a two-layer structure including the base material layer 10 and the first carrier layer 11 , the depth of the etching holes formed from the surface (Z2 side) of the base material layer 10 to the Z1 side It is shallower than the depth of the etching hole formed from the surface (Z1 side) of the first carrier layer 11 to the Z2 side. Alternatively, when etching holes are simultaneously formed on a cladding sheet with a two-layer structure including the base material layer 10 and the second carrier layer 12 , the depth ratio of the etching holes formed from the surface (Z1 side) of the base material layer 10 to the Z2 side The depth of the etching hole formed from the surface (Z2 side) of the second carrier layer 12 to the Z1 side is shallower. If a metal mask sheet (coated sheet 3S) that can obtain such a difference in the depth of the etched holes is used, a metal mask having a mask pattern in which holes are arranged on one surface side can be formed is different from the depth of the hole arranged on the other side.

In addition, it is preferable to perform the etching of the cladding plate 3S using a homogeneous etching solution under the same environment, and let the corrosion loss of the base layer 10 be M _b , the corrosion loss of the first carrier layer 11 be M _c1 , and the first When the etching loss of the two carrier layers 12 is set to M _c2 , the base layer 10 , the first carrier layer 11 and the second carrier layer 12 satisfy the relationship of M _b /M _c1 ≦0.9 and M _b /M _c2 ≦0.9. The cladding sheet 3S satisfying the above relationship can reliably make the etching rate of the base material layer 10 slower than the etching rate of the first carrier layer 11 when the base material layer 10 and the first carrier layer 11 are etched at the same time, or can be etched at the same time. When the base material layer 10 and the second carrier layer 12 are simultaneously etched, the etching rate of the base material layer 10 is reliably made slower than the etching rate of the second carrier layer 12 . Thus, for example, when etching holes are to be formed at the same time, the depth of the etching holes formed from the surface (Z2 side) of the base layer 10 to the Z1 side can be reliably increased from the depth of the etching holes formed from the surface (Z1 side) of the first carrier layer 11 to the Z1 side. The depth of the etching hole formed on the Z2 side is shallower, or the depth of the etching hole formed from the surface (Z1 side) of the base layer 10 to the Z2 side can be reliably made deeper than the depth of the etching hole formed from the surface (Z2 side) of the second carrier layer 12 The depth of the etching hole formed on the Z1 side is shallower. In addition, the simultaneously etched base material layer 10 and the first carrier layer 11 satisfy the relationship of M _b /M _c1 >0 (M _b >0, M _c1 >0), or the simultaneously etched base material layer 10 and the second The carrier layer 12 satisfies the relationship of M _b /M _c2 >0 (M _b >0, M _c2 >0). In addition, the first carrier layer 11 and the second carrier layer 12 may satisfy the relationship of M _c1 /M _c2 ≦0.9, or may satisfy the relationship of M _c2 /M _c1 ≦0.9.

The cladding sheet 3S preferably has mechanical strength and various properties suitable for metal masks, such as 0.2% strength, tensile strength, elongation, Young's modulus, hardness, and coefficient of linear expansion. For example, the cladding sheet 3S having a large tensile strength and a large Young's modulus is preferable from the viewpoint of easy handling. In this case, it is particularly preferable that the coating material 3S has a tensile strength of 700 MPa or more and a Young's modulus of 100 GPa or more of the base material layer 10 serving as the main body of the metal mask. In addition, for example, from the viewpoint of suppressing thermal deformation (strain) during vapor deposition when a metal mask for organic EL elements is used, the cladding sheet 3S having less warpage due to heating is preferable, and it is preferable to constitute the cladding sheet The difference between the linear expansion coefficient of the base material layer 10 of 3S, the linear expansion coefficient of the first carrier layer 11 , and the linear expansion coefficient of the second carrier layer 12 is small. In this case, the linear expansion coefficient of the base material layer 10 is preferably 5 ppm/°C or less, and the linear expansion coefficient of the first carrier layer 11 and the linear expansion coefficient of the second carrier layer 12 are preferably relative to the linear expansion coefficient of the base material layer 10 , respectively. The expansion coefficient is within ±2 ppm/°C.

The embodiment (product example) in which the metal mask according to the present invention can be manufactured by using the above-mentioned coating sheet for metal mask (the first embodiment, the second embodiment and the third embodiment) will be exemplified. Be explained.

<The first product example> The first product example of the metal mask according to the present invention is shown in FIG. 6 . FIG. 6 is a cross-sectional view of the metal mask 1M cut along the thickness direction (Z direction). The metal mask 1M has, for example, etching holes 1f as a mask pattern. The metal mask 1M has a single-layer structure in a cross-sectional view cut along the thickness direction. The main body of the metal mask 1M is the base material portion 10M. The base material portion 10M includes, for example, a portion of the base material layer 10 constituting the covering sheet 1S shown in FIG. 3 , a portion of the base material layer 10 constituting the covering sheet 2S shown in FIG. 4 , or the covering sheet shown in FIG. 5 . Substrate layer 10 part of 3S. The thickness T _1M of the metal mask 1M is reduced in thickness to be 20 μm or less (preferably 15 μm or less). The metal mask 1M thinned in this way has a high dimensional accuracy of mask patterns such as etching holes 1f formed by etching, and has a more precise mask pattern. The thickness T _1M of the metal mask 1M can be, for example, the same as the thickness of the base material layer 10 constituting the cladding sheet 1S, the thickness of the base material layer 10 constituting the cladding sheet 2S, or the thickness of the base material layer 10 constituting the cladding sheet 3S It is equivalent (T _1M = t0 ), and it can also be thinned to the equivalent or less (T _1M < t0 ) by half etching or the like.

<Variation of the first product example> A modification of the first product example of the metal mask according to the present invention is shown in FIG. 7 . FIG. 7 is a cross-sectional view of the metal mask 1Ma cut along the thickness direction (Z direction). The metal mask 1Ma has, for example, etching holes 1f as a mask pattern. The metal mask 1Ma includes a single-layer structure portion and a two-layer structure portion in a cross-sectional view cut along the thickness direction. The single-layer structure portion is the main body of the metal mask 1Ma, and includes the base portion 10M. The two-layer structure portion includes a base material portion 10M and a frame portion 11f for reinforcing the main body of the metal mask 1Ma. The base material portion 10M includes, for example, a portion of the base material layer 10 constituting the covering sheet 1S shown in FIG. 3 , a portion of the base material layer 10 constituting the covering sheet 2S shown in FIG. 4 , or the covering sheet shown in FIG. 5 . Substrate layer 10 part of 3S. The frame portion 11f includes, for example, a portion of the first carrier layer 11 constituting the cladding sheet 1S shown in FIG. 3 , a portion of the first carrier layer 11 constituting the cladding sheet 2S shown in FIG. Part of the first carrier layer 11 of the sheet 3S. The frame portion 11f is arranged in an annular shape at the edge portion of the base material layer 10 . Compared with the metal mask 1M shown in FIG. 6 , the metal mask 1Ma including the frame portion 11 has improved mechanical strength when the thickness of the main body of the metal mask is substantially the same, and thus becomes an easy-to-handle metal mask. The frame portion 11f is disposed annularly at the edge portion of the base portion 10M, but may not be disposed annularly at the edge portion of the base portion 10M, or may be disposed on the opposite side of the base portion 10M. In addition, the structure of the frame part 11f is not limited to the said structure. For example, the frame portion 11f may also be formed from the part of the base material layer 10 of the covering sheet 1S shown in FIG. 3 , the part of the base material layer 10 of the covering sheet 2S shown in FIG. 4 , or the part of the covering sheet 3S shown in FIG. 5 . Any of the parts of the base material layer 10 is constituted. When the frame portion 11f is partially constituted by the base material layer 10, the metal mask has a single-layer structure. In addition, the frame portion 11f may be composed of either the second carrier layer 12 portion of the covering sheet 2S shown in FIG. 4 or the second carrier layer 12 portion of the covering sheet 3S shown in FIG. 5 .

The metal mask 1Ma is thinned, and its thickness T _1Ma is 20 μm or less (preferably 15 μm or less). The metal mask 1Ma thus thinned has a high dimensional accuracy of mask patterns such as etching holes 1f formed by etching, and has a higher finer mask pattern. The thickness T _1Ma of the metal mask 1Ma can be, for example, the same as the thickness of the base material layer 10 constituting the coating sheet 1S, the thickness of the base material layer 10 constituting the coating sheet 2S, or the thickness of the base material layer 10 constituting the coating sheet 3S It is equivalent (T _1Ma = t0 ), and it can also be thinned to the equivalent or less (T _1Ma < t0 ) by half etching or the like. The thickness T _X of the frame portion 11f can be, for example, the same as the thickness of the first carrier layer 11 constituting the coating sheet 1S, the thickness of the first carrier layer 11 constituting the coating sheet 2S, or the first carrier layer 11 constituting the coating sheet 3S. The thickness is the same (T _X = t1 ), and can be reduced to the same or less (T _X < t1 ) by half etching or the like. In addition, the total thickness (T _1Ma + T _X ) of the thickness T _1Ma and the thickness T _X can also be regarded as the thickness of the metal mask 1Ma.

<Second product example> A second product of the metal mask according to the present invention is illustrated in FIG. 8 . FIG. 8 is a cross-sectional view of the metal mask 2M cut along the thickness direction (Z direction). The metal mask 2M has, for example, etching holes 2f as a mask pattern. The metal mask 2M has a two-layer structure in a cross-sectional view cut along the thickness direction. The main body of the metal mask 2M includes a base material portion 10M and a carrier portion 12M. The base material portion 10M includes, for example, a portion of the base material layer 10 constituting the covering sheet 2S shown in FIG. 4 , or a portion of the base material layer 10 constituting the covering sheet 3S shown in FIG. 5 . The carrier portion 12M includes, for example, a portion of the second carrier layer 12 constituting the cladding sheet 2S shown in FIG. 4 , or a portion of the second carrier layer 12 constituting the cladding sheet 3S shown in FIG. 5 . In addition, the structure of the carrier part 12M is not limited to the said structure. For example, the carrier portion 12M can also be the first carrier layer 11 portion of the cladding sheet 1S shown in FIG. 3 , the first carrier layer 11 portion of the cladding sheet 2S shown in FIG. 4 , or the cladding sheet shown in FIG. 5 . Any one of the first carrier layers 11 of 3S is formed. When the carrier portion 12M is formed by the first carrier layer 11 portion of the covering sheet 1S shown in FIG. 3 , the base material portion 10M may be formed by the base material layer 10 portion of the covering sheet 1S shown in FIG. 3 .

The metal mask 2M is thinned, and its thickness T _2M is 20 μm or less (preferably 15 μm or less). The metal mask 2M thinned in this way has a high dimensional accuracy of mask patterns such as etching holes 2f formed by etching, and has a higher-definition mask pattern. The thickness T _2M of the metal mask 2M can be, for example, the total thickness of the base material layer 10 and the second carrier layer 12 constituting the cladding sheet 2S, or the total thickness of the base material layer 10 and the second carrier layer 12 constituting the cladding sheet 3S The thickness is the same (T _2M = t0 + t2 ), and can be reduced to the same or less by half etching or the like (T _2M <t0 + t2 ). The thickness T _Y of the carrier portion 12M may be equal to, for example, the thickness of the second carrier layer 12 constituting the covering sheet 2S or the thickness of the second carrier layer 12 constituting the covering sheet 3S (T _Y = t2 ), or it may be formed by a half thickness. It is thinned to equal or less (T _Y < t2 ) by etching or the like.

<Variation of the second product example> A modified example of the second product example of the metal mask according to the present invention is shown in FIG. 9 . FIG. 9 is a cross-sectional view of the metal mask 2Ma cut along the thickness direction (Z direction). The metal mask 2Ma has, for example, etching holes 2f as a mask pattern. The metal mask 2Ma includes a two-layer structure portion and a three-layer structure portion in a cross-sectional view taken along the thickness direction. The two-layer structure portion becomes the main body of the metal mask 2Ma, and includes the base material portion 10M and the carrier portion 12M. The three-layer structure portion includes a base material portion 10M, a carrier portion 12M, and a frame portion 11f for reinforcing the main body of the metal mask 2Ma. The base material portion 10M includes, for example, a portion of the base material layer 10 constituting the covering sheet 2S shown in FIG. 4 , or a portion of the base material layer 10 constituting the covering sheet 3S shown in FIG. 5 . The carrier portion 12M includes, for example, a portion of the second carrier layer 12 constituting the cladding sheet 2S shown in FIG. 4 , or a portion of the second carrier layer 12 constituting the cladding sheet 3S shown in FIG. 5 . The frame portion 11f includes, for example, a portion of the first carrier layer 11 constituting the cladding sheet 2S shown in FIG. 4 , or a portion of the first carrier layer 11 constituting the cladding sheet 3S shown in FIG. 5 . The frame portion 11f is arranged in an annular shape at the edge portion of the base material layer 10 . Compared with the metal mask 2M shown in FIG. 8 , the metal mask 2Ma including the frame portion 11 has improved mechanical strength when the thickness of the main body of the metal mask is substantially equal, and thus becomes an easy-to-handle metal mask. The frame portion 11f is disposed annularly at the edge portion of the base portion 10M, but may not be disposed annularly at the edge portion of the base portion 10M, or may be disposed on the opposite side of the base portion 10M. In addition, the structure of the frame part 11f is not limited to the said structure. For example, the frame portion 11f may be constituted by either the portion of the base material layer 10 of the covering sheet 2S shown in FIG. 4 or the portion of the base material layer 10 of the covering sheet 3S shown in FIG. 5 . When the frame portion 11f is partially constituted by the base material layer 10, the metal mask has a two-layer structure of the base material layer 10 and the carrier portion 12M. In addition, the structure of the carrier part 12M is not limited to the said structure. For example, the carrier portion 12M may be composed of either the first carrier layer 11 part constituting the cladding sheet 2S shown in FIG. 4 , or the first carrier layer 11 part constituting the cladding sheet 3S shown in FIG. 5 .

The metal mask 2Ma is thinned, and its thickness T _2Ma is 20 μm or less (preferably 15 μm or less). The metal mask 2Ma thinned in this way has high dimensional accuracy of mask patterns such as etching holes 2f formed by etching, and has a more precise mask pattern. The thickness T _2Ma of the metal mask 2Ma can be, for example, the total thickness of the base material layer 10 and the second carrier layer 12 constituting the cladding sheet 2S, or the total thickness of the base material layer 10 and the second carrier layer 12 constituting the cladding sheet 3S The thickness is the same (T _2Ma = t0 + t2 ), and can be reduced to the same or less (T _2Ma <t0 + t2 ) by half etching or the like. The thickness T _Y of the carrier portion 12M may be equal to, for example, the thickness of the second carrier layer 12 constituting the covering sheet 2S or the thickness of the second carrier layer 12 constituting the covering sheet 3S (T _Y = t2 ), or it may be formed by a half thickness. It is thinned to equal or less (T _Y < t2 ) by etching or the like. The thickness T _X of the frame portion 11 f may be equal to, for example, the thickness of the first carrier layer 11 constituting the covering sheet 2S or the thickness of the first carrier layer 11 constituting the covering sheet 3S (T _X = t1 ), or it may be formed by a half thickness. It is thinned to equal or less (T _X < t1 ) by etching or the like. In addition, the total thickness (T _2Ma + T _X ) of the thickness T _2Ma and the thickness T _X can also be regarded as the thickness of the metal mask 2Ma.

<The third product example> A third product of the metal mask according to the present invention is illustrated in FIG. 10 . FIG. 10 is a cross-sectional view of the metal mask 3M cut along the thickness direction (Z direction). The metal mask 3M has, for example, etching holes 3f as a mask pattern. The metal mask 3M has a three-layer structure in a cross-sectional view cut along the thickness direction. The main body of the metal mask 3M includes a base material portion 10M, a first carrier portion 11M and a second carrier portion 12M. The base material portion 10M includes, for example, a portion of the base material layer 10 constituting the covering sheet 2S shown in FIG. 4 , or a portion of the base material layer 10 constituting the covering sheet 3S shown in FIG. 5 . The first carrier portion 11M includes, for example, the portion of the first carrier layer 11 that constitutes the cladding sheet 2S shown in FIG. 4 , or the portion of the first carrier layer 11 that constitutes the cladding sheet 3S shown in FIG. 5 . The second carrier portion 12M includes, for example, a portion of the second carrier layer 12 constituting the cladding sheet 2S shown in FIG. 4 , or a portion of the second carrier layer 12 constituting the cladding sheet 3S shown in FIG. 5 . In addition, the structure of the 1st carrier part 11M and the 2nd carrier part 12M is not limited to the said structure. For example, the first carrier part 11M may be formed by the second carrier layer 12 of the covering sheet 2S shown in FIG. 4 , and the second carrier part 12M may be formed by the first carrier layer 11 part of the covering sheet 2S shown in FIG. 4 . In addition, the first carrier portion 11M may be constituted by the second carrier layer 12 of the cladding plate 3S shown in FIG. 5 , and the second carrier portion 12M may be constituted by the first carrier layer 11 of the cladding plate 3S shown in FIG. 5 .

The metal mask 3M is thinned, and its thickness T _3M is 20 μm or less (preferably 15 μm or less). The metal mask 3M thinned in this way has a high dimensional accuracy of mask patterns such as etching holes 3f formed by etching, and has a higher-definition mask pattern. The thickness T _3M of the metal mask 3M can be, for example, the same as the total thickness of the base material layer 10 , the first carrier layer 11 and the second carrier layer 12 constituting the covering sheet 2S, or the base material layer 10 and the first carrier layer 12 constituting the covering sheet 3S. The total thickness of the first carrier layer 11 and the second carrier layer 12 is the same (T _3M = t0 + t1 + t2 ), and can be reduced to the same or less by half etching (T _3M <t0 + t1 + t2 ). The thickness T _Y1 of the first carrier portion 11M may be equal to, for example, the thickness of the first carrier layer 11 constituting the covering sheet 2S or the thickness of the first carrier layer 11 constituting the covering sheet 3S (T _Y1 = t1 ), or may be It is thinned to equal or less by half etching or the like (T _Y1 < t1 ). The thickness T _Y2 of the second carrier portion 12M may be equal to, for example, the thickness of the second carrier layer 12 constituting the cover sheet 2S or the thickness of the second carrier layer 12 constituting the cover sheet 3S (T _Y2 = t2 ), or may be It is thinned to equal or less by half etching or the like (T _Y2 < t2 ).

<Variation of the third product example> A modification of the third product example of the metal mask according to the present invention is shown in FIG. 11 . FIG. 11 is a cross-sectional view of the metal mask 3Ma cut along the thickness direction (Z direction). The metal mask 3Ma has, for example, etching holes 3f as a mask pattern. The metal mask 3Ma has a three-layer structure in a cross-sectional view cut along the thickness direction. The main body of the metal mask 3Ma includes the base material portion 10M, the first carrier portion 11M, and the second carrier portion 12M. The first carrier portion 11M has a frame portion 11f for reinforcing the metal mask 3Ma. The base material portion 10M includes, for example, a portion of the base material layer 10 constituting the covering sheet 2S shown in FIG. 4 , or a portion of the base material layer 10 constituting the covering sheet 3S shown in FIG. 5 . The first carrier portion 11M and the frame portion 11f include, for example, the first carrier layer 11 part constituting the cladding sheet 2S shown in FIG. 4 , or the first carrier layer 11 part constituting the cladding sheet 3S shown in FIG. 5 . The second carrier portion 12M includes, for example, a portion of the second carrier layer 12 constituting the cladding sheet 2S shown in FIG. 4 , or a portion of the second carrier layer 12 constituting the cladding sheet 3S shown in FIG. 5 . The frame portion 11f can be formed when the first carrier portion 11M is formed. The frame portion 11f is arranged in an annular shape at the edge portion of the base material layer 10 . Compared with the metal mask 3M shown in FIG. 10 , the metal mask 3Ma including the frame portion 11 has improved mechanical strength when the thickness of the main body of the metal mask is substantially the same, and thus becomes a metal mask that is easy to handle. The frame portion 11f is arranged annularly at the edge portion of the first carrier portion 11M, but may not be arranged annularly at the edge portion of the first carrier portion 11M, and may be arranged on the second side on the opposite side of the first carrier portion 11M. carrier portion 12M. In addition, the structure of the frame part 11f is not limited to the said structure. For example, the frame portion 11f may be constituted by either the second carrier layer 12 portion of the cladding sheet 2S shown in FIG. 4 or the second carrier layer 12 portion of the cladding sheet 3S shown in FIG. 5 .

The metal mask 3Ma is thinned, and its thickness T _3Ma is 20 μm or less (preferably 15 μm or less). The metal mask 3Ma thinned in this way has high dimensional accuracy of mask patterns such as etching holes 3f formed by etching, and has a more precise mask pattern. The thickness T _3Ma of the metal mask 3Ma can be, for example, the same as the total thickness of the base material layer 10 , the first carrier layer 11 and the second carrier layer 12 constituting the covering sheet 2S, or the base material layer 10 and the first carrier layer 12 constituting the covering sheet 3S. The total thickness of the first carrier layer 11 and the second carrier layer 12 is the same (T _3Ma = t0 + t1 + t2 ), and may be reduced to the same or less by half etching (T _3Ma <t0 + t1 + t2 ). The thickness T _Y1 of the first carrier portion 11M may be equal to, for example, the thickness of the first carrier layer 11 constituting the covering sheet 2S or the thickness of the first carrier layer 11 constituting the covering sheet 3S (T _Y1 = t1 ), or may be It is thinned to equal or less by half etching or the like (T _Y1 < t1 ). The thickness T _Y2 of the second carrier portion 12M may be equal to, for example, the thickness of the second carrier layer 12 constituting the cover sheet 2S or the thickness of the second carrier layer 12 constituting the cover sheet 3S (T _Y2 = t2 ), or may be It is thinned to equal or less by half etching or the like (T _Y2 < t2 ). The thickness T _X of the frame portion 11f may be, for example, the thickness obtained by subtracting the thickness of the first carrier portion 11M from the thickness of the first carrier layer 11 constituting the covering sheet 2S, or the thickness of the first carrier layer 11 constituting the covering sheet 3S. The thickness obtained by subtracting the thickness of the first carrier portion 11M from the thickness of the first carrier portion 11M is the same (T _X =t1-T _Y1 ), and may be reduced to the same or less (T _X <t1-T _Y1 ) by half etching or the like. In addition, the total thickness (T _3Ma + T _X ) of the thickness T _3Ma and the thickness T _X can also be regarded as the thickness of the metal mask 3Ma.

Hereinafter, based on FIGS. 12 to 20 , an implementation of manufacturing and embodying the metal mask of the present invention will be described using the cladding sheet for a metal mask of the present invention (the first embodiment, the second embodiment, and the third embodiment). The method of the method (product example) will be described. 12 to 16 , an example of a method of manufacturing a metal mask using the cladding sheet 1S (first embodiment) shown in FIG. 3 will be described, based on FIGS. 17 to 20 . An example of the manufacturing method of the metal mask of the coating material 2S (2nd Embodiment) and the coating material 3S (3rd Embodiment) shown in FIG. 5 is demonstrated.

<First Product Example> <Second Product Example> According to the manufacturing method of the metal mask shown in FIGS. 12 and 13 , the metal mask 1M (first product example) shown in FIG. 6 and the metal mask 2M (second product example) shown in FIG. 8 can be manufactured.

In Fig. 12, step (a) is a raw material preparation step. In this raw material preparation step, for example, the cladding sheet 1S shown in FIG. 3 is prepared. The cladding sheet 1S (thickness T _1S ) includes a base material layer 10 (thickness t0 ) and a first carrier layer 11 (thickness t1 ). The thickness of the base material layer 10 is 1 μm or more and 20 μm or less (preferably 5 μm or more and 15 μm or less). The base material layer 10 and the first carrier layer 11 are crimped. The base material layer 10 includes, for example, an iron-based alloy A containing about 32 mass % of Ni and about 5.5 mass % of Co. The first carrier layer 11 contains, for example, an iron-based alloy B containing about 36 mass % of Ni. The base material layer 10 including the iron-based alloy A and the first carrier layer 11 including the iron-based alloy B can be etched with a homogeneous etching solution (eg, a ferric chloride solution with a concentration of 40% by mass). In addition, the base material layer 10 including the iron-based alloy A has higher corrosion resistance to the etching solution than the first carrier layer 11 including the iron-based alloy B.

In Fig. 12, step (b) is a coating step. In this coating step, in order to form a predetermined etching pattern, the protective film 13 is formed on the surface 10 a of the base material layer 10 , and the protective film 14 is formed on the surface 11 a of the first carrier layer 11 .

In FIG. 12, step (c) is an etching step. In this etching step, the cladding plate 1S is etched using an etchant suitable for both the iron-based alloy A constituting the base layer 10 and the iron-based alloy B constituting the first carrier layer 11 . As an etching liquid, the ferric chloride liquid (aqueous solution) whose density|concentration is 40 mass % is used, for example. By the etching, the surface 10a of the base layer 10 without the protective film 13 and the surface 11a of the first carrier layer 11 without the protective film 14 are simultaneously etched, for example, the etching hole 10b and the etching hole 11b are formed substantially simultaneously. At this time, the base material layer 10 containing the iron-based alloy A has higher corrosion resistance to the etchant than the first carrier layer 11 containing the iron-based alloy B, so that the etching rate on the first carrier layer 11 side becomes larger than that of the first carrier layer 11 . The etching rate on the base layer 10 side. Therefore, the etching loss on the first carrier layer 11 side becomes larger than on the base layer 10 side, and the size of the etching hole 11b on the first carrier layer 11 side (depth from the surface, opening to the surface, hole size) can be increased. The volume inside, etc.) is larger than the etching hole 10b on the base material layer 10 side. In addition, the adjustment of the size of the etching hole 10b and the etching hole 11b, etc. can be realized by appropriately selecting the thicknesses, materials, and the like of the base material layer 10 and the first carrier layer 11.

In Fig. 12, step (d) is a finishing step. In this finishing step, the protective film 13 and the protective film 14 are removed from the covering plate 1S, and the entire surface is cleaned. Thereby, a metal mask can be produced. This metal mask includes a base material portion 10M including an iron-based alloy A, and a carrier portion 11M including an iron-based alloy B. This metal mask is, for example, a metal mask 2M as shown in FIG. 8 , and is, for example, a metal mask 2M (second product example) having a two-layer structure with a thickness T _2M of the mask pattern 2 f .

Next, the manufacturing method of the metal mask using the manufacturing process shown in FIG. 13 is demonstrated. The manufacturing process shown in FIG. 13 is a process following steps (a) to (c) shown in FIG. 12 . After steps (a) to (c) shown in FIG. 12 , steps ( c1 ) and ( d1 ) shown in FIG. 13 are performed, whereby, for example, the metal mask 1M shown in FIG. 6 (No. a product example).

In FIG. 13, step (c1) is a half etching step. In this half-etching step, half-etching is performed after removing the protective film 13 from the cladding sheet 1S. Half-etching is performed substantially uniformly from the surface 10a side (Z2 side) of the base material layer 10 to the first carrier layer 11 side (Z1 side) using an etchant suitable for the iron-based alloy A constituting the base material layer 10 . As an etching liquid, the ferric chloride liquid (aqueous solution) whose density|concentration is 40 mass % is used, for example. Substantially all of the base material layer 10 is removed by the half-etching. Further, by adjusting the half-etching conditions, the first carrier layer 11 from which the base material layer 10 has been removed may be half-etched toward the Z1 side. Thereby, the thickness reduction of the metal mask can be achieved.

In Fig. 13, step (d1) is a finishing step. In this finishing step, the protective film 14 can be removed from the covering plate 1S, and the entire surface of the covering plate 1S can be cleaned to produce a metal mask. The metal mask includes a carrier portion 11M containing an iron-based alloy B. The metal mask is, for example, a metal mask 1M as shown in FIG. 6 , and is, for example, a metal mask 1M (a first product example) having a single-layer structure with a thickness T _1M of the mask pattern 1f.

<The first modification of the first product example> According to the manufacturing method of the metal mask shown in FIGS. 12 and 14 , or FIGS. 12 and 15 , it is possible to manufacture the metal mask shown in FIG. 14 or the metal mask 1Ma shown in FIG. 15 (a first modification of the first product example).

The metal mask 1Ma shown in FIG. 14 or FIG. 15 (the first modification of the first product example) can be passed through the process shown in FIG. 13 or FIG. 14 after the steps (a) to (c) shown in FIG. 12 . manufacturing process. In addition, in the raw material preparation step corresponding to the step (a) shown in FIG. 12 , for example, the cladding sheet 1S shown in FIG. 3 is prepared. This cladding sheet 1S may be the same as the case of the metal mask 1M. The coating step corresponding to the step (b) shown in FIG. 12 and the etching step corresponding to the step (c) can also be performed in the same manner as in the case of the metal mask 1M.

The manufacturing method of the metal mask using the manufacturing process shown in FIG. 14 is demonstrated. The manufacturing process shown in FIG. 14 is a process following steps (a) to (c) shown in FIG. 12 . In FIG. 14 , step (e) is a covering step. In this coating step, in order to form the frame portion 11f of a predetermined shape on the Z1 side (see step (h)), the protective film 15 is formed on the surface 11a of the first carrier layer 11, and the etching hole 11b (see FIG. 12 ) is formed to protect In the film 16, a protective film 17 is formed on the surface 10a of the base material layer 10 and the etching hole 10b.

In FIG. 14, step (f) is an etching step. In this etching step, the first carrier layer 11 is etched using an etchant suitable for the iron-based alloy B constituting the first carrier layer 11 . As an etching liquid, the ferric chloride liquid (aqueous solution) whose density|concentration is 40 mass % is used, for example. By the etching, the surface 11a of the first carrier layer 11 which does not have the protective film 15 and the protective film 16 is etched to form, for example, an etching hole 11c. The adjustment of the depth (etching amount) of the etching hole 11 can be realized by adjusting the etching conditions and the like.

In FIG. 14, step (g) is a half etching step. In this half-etching step, the protective film 17 is first removed from the base material layer 10 . Next, the protective film 18 is formed on the surface 11 a of the first carrier layer 11 including the etching hole 11 b and the etching hole 11 c, and the protective film 19 is formed in the etching hole 10 b (see FIG. 12 ). Then do half etching. The half-etching is performed substantially uniformly from the surface 10a side (Z2 side) of the base material layer 10 to the first carrier layer 11 side (Z1 side). Substantially all of the base material layer 10 is removed by the half-etching. Further, by adjusting the half-etching conditions, the first carrier layer 11 from which the base material layer 10 has been removed may be half-etched toward the Z1 side. Thereby, the thickness reduction of the metal mask can be achieved.

In Fig. 14, step (h) is a finishing step. In this finishing step, the protective film 18 and the protective film 19 are removed from the covering plate 1S, and the entire surface is cleaned. Thereby, a metal mask can be produced. The metal mask includes a carrier portion 11M made of an iron-based alloy B, and a frame portion 11f is arranged in a ring shape at an edge portion on the Z1 side of the carrier portion 11M. The frame portion 11f includes a portion of the first carrier layer 11 . The metal mask has, for example, a structure similar to that of the metal mask shown in FIG. 7 , and is, for example, a metal mask 1Ma having a single-layer structure with a thickness T _1Ma of the mask pattern 1fa (a first modification of the first product example). example).

Next, the manufacturing method of the metal mask using the manufacturing process shown in FIG. 15 is demonstrated. The manufacturing process shown in FIG. 15 is a process following steps (a) to (c) shown in FIG. 12 . In FIG. 15, step (e1) is a covering step. In this coating step, in order to form a frame portion 11f of a predetermined shape on the Z1 side (see step (h1)), a protective film 15 is formed on the surface 11a of the first carrier layer 11, and a protective film is formed on the etching hole 11b (see FIG. 12 ). For the film 16, a protective film 19 is formed in the etching hole 10b (see FIG. 12). In addition, the protective film is not formed on the surface 10 a of the base material layer 10 .

In FIG. 15, step (f1) is an etching and half-etching step. In this etching and half-etching step, an etching solution suitable for both the iron-based alloy A constituting the base layer 10 and the iron-based alloy B constituting the first carrier layer 11 is used to etch the first carrier layer 11 side (Z1 side) and the base layer 10 side (Z2 side) are etched simultaneously. As an etching liquid, the ferric chloride liquid (aqueous solution) whose density|concentration is 40 mass % is used, for example. By the etching, the surface 11a of the first carrier layer 11 which does not have the protective film 15 and the protective film 16 is etched to form, for example, an etching hole 11c. Adjustment of the depth (etching amount) of the etching hole 11c can be achieved by adjusting etching conditions and the like. At the same time, the surface 10 a of the base material layer 10 without the protective film 19 is substantially uniformly half-etched toward the first carrier layer 11 side (Z1 side) to remove substantially all of the base material layer 10 . Further, by adjusting the half-etching conditions, the first carrier layer 11 from which the base material layer 10 has been removed may be half-etched toward the Z1 side. Thereby, the thickness reduction of the metal mask can be achieved.

In Fig. 15, step (h1) is a finishing step. In this finishing step, the protective film 15 , the protective film 16 and the protective film 19 are removed from the covering plate 1S, and the entire surface is cleaned. Thereby, a metal mask can be produced. The metal mask includes a carrier portion 11M made of an iron-based alloy B, and a frame portion 11f is arranged in a ring shape at an edge portion on the Z1 side of the carrier portion 11M. The frame portion 11f includes a portion of the first carrier layer 11 . The metal mask has, for example, a structure similar to that of the metal mask shown in FIG. 7 , and is, for example, a metal mask 1Ma having a single-layer structure with a thickness T _1Ma of the mask pattern 1fa (a first modification of the first product example). example).

<Second modification of the first product example> According to the manufacturing method of the metal mask shown in FIGS. 12 and 16 , it is possible to manufacture the metal mask shown in FIG. 7 (modification of the first product example) having a similar structure and having the frame portion 10 f arranged on the Z2 side. , the metal mask 1Mb shown in FIG. 16 (the second modification of the first product example).

The metal mask 1Mb shown in FIG. 16 (a second modification of the first product example) can be manufactured through the manufacturing process shown in FIG. 16 following the steps (a) to (c) shown in FIG. 12 . In addition, in the raw material preparation step corresponding to the step (a) shown in FIG. 12 , for example, the cladding sheet 1S shown in FIG. 3 is prepared. This cladding sheet 1S may be the same as the case of the metal mask 1M. The coating step corresponding to the step (b) shown in FIG. 12 and the etching step corresponding to the step (c) can be performed in the same manner as in the case of the aforementioned metal mask 1M.

The manufacturing process shown in FIG. 16 is a process following steps (a) to (c) shown in FIG. 12 . In FIG. 16, step (e2) is a covering step. In this coating step, in order to form the frame portion 10f of a predetermined shape on the Z2 side (refer to step (h2)), the protective film 17 is formed on the surface 10a of the base layer 10, the protective film 19 is formed on the etching hole 10b, and the first The protective film 20 is formed on the surface 11 a of the carrier layer 11 and the etching hole 11 b (see FIG. 12 ).

In FIG. 16, step (f2) is an etching step. In this etching step, the base material layer 10 is etched using an etchant suitable for the iron-based alloy A constituting the base material layer 10 . As an etching liquid, the ferric chloride liquid (aqueous solution) whose density|concentration is 40 mass % is used, for example. By the etching, the surface 10a of the base material layer 10 which does not have the protective film 17 and the protective film 19 is etched, and substantially all of the base material layer 10 is removed, for example, an etching hole 10c is formed. The adjustment of the depth (etching amount) of the etching hole 10c can be realized by adjusting the etching conditions and the like. Further, by adjusting the etching conditions, the first carrier layer 11 from which the base material layer 10 has been removed may be etched toward the Z1 side. Thereby, the thickness reduction of the metal mask can be achieved.

In Fig. 16, step (h2) is a finishing step. In this finishing step, the protective film 17, the protective film 19, and the protective film 20 are removed, and the entire surface is cleaned. Thereby, a metal mask can be produced. The metal mask includes a carrier portion 11M made of an iron-based alloy B, and a frame portion 10f is arranged in a ring shape at an edge portion of the carrier portion 11M on the Z2 side. The frame portion 10f includes the base material layer 10 portion. The metal mask has, for example, a structure similar to that of the metal mask shown in FIG. 7 , and the frame portion 10f is arranged on the Z2 side. The metal mask is, for example, a metal mask 1Mb having a thickness T _1Mb of a mask pattern 1f (a second modification of the first product example). The main body of the metal mask 1Mb is a single-layer structure.

<The third product example> According to the manufacturing method of the metal mask shown in FIG. 17, the metal mask 3M (third product example) shown in FIG. 10 can be manufactured.

In Fig. 17, step (i) is a raw material preparation step. In this raw material preparation step, for example, the cladding sheet 2S shown in FIG. 4 or the cladding sheet 3S shown in FIG. 5 is prepared. In FIG. 16 , the cladding plate 2S shown in FIG. 4 is typically shown. The cladding sheet 2S (thickness T _2S ) includes a base material layer 10 (thickness t0 ), a first carrier layer 11 (thickness t1 ) and a second carrier layer 12 (thickness t2 ). The thickness of the base material layer 10 is 1 μm or more and 20 μm or less (preferably 5 μm or more and 15 μm or less). The base material layer 10 and the first carrier layer 11 are crimped. The base material layer 10 and the second carrier layer 12 are crimped. The base material layer 10 includes, for example, an iron-based alloy A containing about 32 mass % of Ni and about 5.5 mass % of Co. The first carrier layer 11 contains, for example, an iron-based alloy B containing about 36 mass % of Ni. The second carrier layer 12 includes the iron-based alloy C, which can be etched by an etching solution of the same quality as the iron-based alloy B, and has higher corrosion resistance to the etching solution than the iron-based alloy B. The base material layer 10 containing the iron-based alloy A, the first carrier layer 11 containing the iron-based alloy B, and the second carrier layer 12 containing the iron-based alloy C can all be made of a homogeneous etching solution (for example, a chlorinated solution with a concentration of 40% by mass). molten iron, etc.) for etching. In addition, the base material layer 10 comprising the iron-based alloy A has higher corrosion resistance to the etching solution than the first carrier layer 11 comprising the iron-based alloy B, and is more resistant to the etching solution than the second carrier comprising the iron-based alloy C The layer 12 is more resistant to the etching solution.

In FIG. 17 , step (j) is a covering step. In this coating step, in order to form a predetermined etching pattern, the protective film 13 is formed on the surface 11 a of the first carrier layer 11 , and the protective film 14 is formed on the surface 12 a of the second carrier layer 12 .

In FIG. 17, step (k) is an etching step. In this etching step, the cladding plate 2S is etched using an etchant suitable for both the iron-based alloy B constituting the first carrier layer 11 and the iron-based alloy C constituting the second carrier layer 12 . As an etching liquid, the ferric chloride liquid (aqueous solution) whose density|concentration is 40 mass % is used, for example. By the etching, the surface 11a of the first carrier layer 11 without the protective film 13 and the surface 12a of the second carrier layer 12 without the protective film 14 are etched at the same time, for example, the etching hole 11b and the etching hole 12b are formed substantially simultaneously. . At this time, the second carrier layer 12 containing the iron-based alloy C has higher corrosion resistance to the etching solution than the first carrier layer 11 containing the iron-based alloy B, whereby the etching rate on the side of the first carrier layer 11 becomes Greater than the etching rate on the second carrier layer 12 side. Therefore, the etching loss on the first carrier layer 11 side becomes larger than that on the base layer 10 side, and the formation of the etching hole from the Z1 side to the Z2 side proceeds faster. As a result, since the etching of the base material layer 10 proceeds from the Z1 side, the size of the etching hole 11b on the first carrier layer 11 side (Z1 side) (the depth from the surface, the opening size to the surface, the size of the hole in the hole) can be adjusted. volume, etc.) is larger than the etching hole 12b on the second carrier layer 12 side (Z2 side). In addition, the adjustment of the size of the etching hole 11b and the etching hole 12b, etc. can be realized by appropriately selecting the thicknesses, materials, and the like of the first carrier layer 11 and the second carrier layer 12.

In Fig. 17, step (m) is a finishing step. In this finishing step, the protective film 13 and the protective film 14 are removed from the covering plate 2S, and the entire surface is cleaned. Thereby, a metal mask can be produced. The metal mask includes a base material portion 10M including iron-based alloy A, a first carrier portion 11M including iron-based alloy B, and a second carrier portion 12M including iron-based alloy C. The metal mask is, for example, a metal mask 3M as shown in FIG. 10 , and is, for example, a metal mask 3M (third product example) having a three-layer structure with a thickness T _3M of the mask pattern 3 f .

<Variation of the third product example> According to the manufacturing process shown in FIGS. 17 and 18 , the metal mask 3Ma shown in FIG. 11 (a modification of the third product example) can be manufactured.

The metal mask 3Ma shown in FIG. 11 (a modification of the third product example) can be manufactured by the manufacturing process shown in FIG. 18 following the steps (i) to (k) shown in FIG. 17 . In addition, in the raw material preparation step corresponding to the step (i) shown in FIG. 17 , for example, the cladding plate 3S shown in FIG. 5 is prepared. The cladding sheet 3S (thickness T _3S ) includes a base material layer 10 (thickness t0 ), a first carrier layer 11 (thickness t1 ) and a second carrier layer 12 (thickness t2 , t1>t2 ). The thickness of the base material layer 10 is 1 μm or more and 20 μm or less (preferably 5 μm or more and 15 μm or less). The thickness t1 of the first carrier layer 11 is thicker than the thickness t2 of the second carrier layer 12 (refer to FIG. 5 , t1 > t2 ) in order to use the first carrier layer 11 to partially provide the frame portion 11 f (see FIG. 18 ). The base material layer 10 and the first carrier layer 11 are crimped. The base material layer 10 and the second carrier layer 12 are crimped. The base material layer 10 includes, for example, an iron-based alloy A containing about 32 mass % of Ni and about 5.5 mass % of Co. The first carrier layer 11 contains, for example, an iron-based alloy B containing about 36 mass % of Ni. The second carrier layer 12 includes an iron-based alloy C, which can be etched by an etchant of the same quality as the iron-based alloy B, and has higher corrosion resistance to the etchant than that of the iron-based alloy B. The base material layer 10 containing the iron-based alloy A, the first carrier layer 11 containing the iron-based alloy B, and the second carrier layer 12 containing the iron-based alloy C can all be made of a homogeneous etching solution (for example, a chlorinated solution with a concentration of 40% by mass). molten iron, etc.) for etching. In addition, the base material layer 10 comprising the iron-based alloy A has higher corrosion resistance to the etching solution than the first carrier layer 11 comprising the iron-based alloy B, and is more resistant to the etching solution than the second carrier comprising the iron-based alloy C The layer 12 is more resistant to the etching solution. The coating step corresponding to the step (j) shown in FIG. 17 and the etching step corresponding to the step (k) can be performed in the same manner as in the case of the aforementioned metal mask 3M.

The manufacturing process shown in FIG. 18 is a process following steps (i) to (k) shown in FIG. 17 . In FIG. 18, step (n) is a coating step. In this coating step, in order to form a frame portion 11f of a predetermined shape on the Z1 side (see step (q)), a protective film 15 is formed on the surface 11a of the first carrier layer 11, and a protective film is formed on the etching hole 11b (see FIG. 17 ). For the film 16 , a protective film 17 is formed on the surface 12 a of the second carrier layer 12 and the etching hole 12 b (see FIG. 17 ).

In FIG. 18, step (p) is an etching step. In this etching step, the first carrier layer 11 is etched using an etchant suitable for the iron-based alloy B constituting the first carrier layer 11 . As an etching liquid, the ferric chloride liquid (aqueous solution) whose density|concentration is 40 mass % is used, for example. By the etching, the surface 11a of the first carrier layer 11 without the protective film 15 is etched to form, for example, an etching hole 11c. In addition, by adjusting conditions such as etching time, the depth of the etching hole 11c can be adjusted.

In Fig. 18, step (q) is a finishing step. In this finishing step, the protective film 15, the protective film 16, and the protective film 17 are removed from the covering plate 3S, and the entire surface is cleaned. Thereby, a metal mask can be produced. The metal mask includes a base material portion 10M comprising iron-based alloy A, a first carrier portion 11M comprising iron-based alloy B, and a second carrier portion 12M comprising iron-based alloy C, on the Z1 side of the first carrier portion 11M The edge portion of the frame portion 11f is arranged in a ring shape. This frame portion 11f includes a portion of the first carrier layer 11 . The metal mask is, for example, a metal mask 3Ma as shown in FIG. 11 , and is, for example, a metal mask 3Ma (third product example) having a three-layer structure with a thickness T _3Ma of the mask pattern 3f.

<Variation of the second product example> According to the manufacturing process shown in FIGS. 17 and 19 , the metal mask 2Ma shown in FIG. 9 (a modification of the second product example) can be manufactured.

The metal mask 2Ma shown in FIG. 9 (a modification of the second product example) can be manufactured by the manufacturing process shown in FIG. 19 following the steps (i) to (k) shown in FIG. 17 . In addition, in the raw material preparation step corresponding to the step (i) shown in FIG. 17 , for example, the covering plate 2S shown in FIG. 4 or the covering plate 3S shown in FIG. 5 is prepared. In FIG. 19 , the cladding plate 2S shown in FIG. 4 is typically shown. The cladding sheet 2S may be the same as the case of the metal mask 3M. The thickness t1 of the first carrier layer 11 may be approximately equal to the thickness t2 of the second carrier layer 12 (refer to FIG. 4 , t1= t2). The coating step corresponding to the step (j) shown in FIG. 17 and the etching step corresponding to the step (k) can be performed in the same manner as in the case of the aforementioned metal mask 3M.

The manufacturing process shown in FIG. 19 is a process following steps (i) to (k) shown in FIG. 17 . In FIG. 19, step (n1) is a covering step. In this coating step, in order to form a frame portion 11f of a predetermined shape on the Z1 side (see step (q1)), a protective film 15 is formed on the surface 11a of the first carrier layer 11, and a protective film 15 is formed on the etching hole 11b (see FIG. 17 ). For the film 16 , a protective film 17 is formed on the surface 12 a of the second carrier layer 12 and the etching hole 12 b (see FIG. 17 ).

In FIG. 19, step (p1) is an etching step. In this etching step, the first carrier layer 11 is etched using an etchant suitable for the iron-based alloy B constituting the first carrier layer 11 . As an etching liquid, the ferric chloride liquid (aqueous solution) whose density|concentration is 40 mass % is used, for example. By the etching, the surface 11a of the first carrier layer 11 without the protective film 15 is etched, and substantially all the first carrier layer 11 is removed to form, for example, an etching hole 11c. In addition, by adjusting conditions such as etching time, the depth of the etching hole 11c can be adjusted. In addition, by adjusting the etching conditions, the base material layer 10 from which the first carrier layer 11 has been removed may be etched toward the Z2 side. Thereby, the thickness reduction of the metal mask can be achieved.

In FIG. 19, step (q1) is a finishing step. In this finishing step, the protective film 15 , the protective film 16 , and the protective film 17 are removed from the covering plate 2S, and the entire surface is cleaned. Thereby, a metal mask can be produced. The main body of the metal mask includes a base material portion 10M comprising iron-based alloy A and a second carrier portion 12M comprising iron-based alloy C. In the metal mask, a frame portion 11f is arranged in a ring shape at the edge portion on the Z1 side of the first carrier portion 11M including the iron-based alloy B. This frame portion 11f includes a portion of the first carrier layer 11 . The metal mask is, for example, a metal mask 2Ma as shown in FIG. 9 , and is, for example, a metal mask 2Ma having a thickness T _2Ma of the mask pattern 2f (a modification of the second product example). The main body of the metal mask 2Ma is a two-layer structure.

<The third modification of the first product example> According to the manufacturing process shown in FIGS. 17 and 20 , the metal mask 1Ma shown in FIG. 7 (a modification of the first product example) can be manufactured. In addition, for convenience, the metal mask 1Ma shown in FIG. 20 obtained by the said manufacturing process is called the 3rd modification of the 1st product example.

The metal mask 1Ma shown in FIG. 7 (the third modification of the first product example) can be manufactured through the manufacturing process shown in FIG. 20 following the steps (i) to (k) shown in FIG. 17 . In addition, in the raw material preparation step corresponding to the step (i) shown in FIG. 17 , for example, a cladding plate similar to the cladding plate 2S shown in FIG. 4 or the cladding plate 3S shown in FIG. 5 is prepared. The cladding plate 3S may be the same as the case of the metal mask 3Ma (refer to FIG. 18 ), or may not be the same as the case of the metal mask 3Ma (refer to FIG. 18 ). Regarding the cladding sheet 3S, for example, the thickness t2 of the second carrier layer 12 may be thicker than the thickness t1 of the first carrier layer 11 (t1<t2). In FIG. 20 , a cladding sheet having a three-layer structure similar to the cladding sheet 3S shown in FIG. 5 (hereinafter referred to as a cladding sheet 3S) is typically shown. The base material layer 10 includes the iron-based alloy A described above, for example. The first carrier layer 11 includes the iron-based alloy C, which is easier to be etched by a homogeneous etching solution than the iron-based alloy A, for example. The second carrier layer 12 includes, for example, the iron-based alloy B, which is easier to be etched by a homogeneous etching solution than the iron-based alloy C. Therefore, the base material layer 10 and the first carrier layer 11 and the second carrier layer 12 can be etched simultaneously. In addition, the base material layer 10 is more resistant to the etching solution than the first carrier layer 11 and the second carrier layer 12 , and the first carrier layer 11 is more resistant to the etching than the second carrier layer 12 Liquid is more resistant to corrosion. The coating step corresponding to the step (j) shown in FIG. 17 can be performed in the same manner as in the case of the above-described metal mask 3M. In addition, in the etching step corresponding to step (k), the first carrier layer 11 has higher corrosion resistance than the second carrier layer 12 , so that the etching speed of the second carrier layer 12 becomes higher than that of the first carrier layer 11 etching rate. Therefore, it may be adjusted by considering that the etching amount (depth) from the second carrier layer 12 side (Z2 side) to the Z1 side is larger than the etching amount (depth) from the first carrier layer 11 side (Z1 side) to the Z2 side .

The manufacturing process shown in FIG. 20 is a process following steps (i) to (k) shown in FIG. 17 . In FIG. 20, step (n2) is a covering step. In this coating step, in order to form a frame portion 11f of a predetermined shape on the Z1 side (see step (q2)), a protective film 15 is formed on the surface 11a of the first carrier layer 11, and a protective film 15 is formed on the etching hole 11b (see FIG. 17 ). For the film 16, a protective film 19 is formed in the etching hole 12b (see FIG. 17). In addition, a protective film is not formed on the surface 11 a of the second carrier layer 11 .

In FIG. 20, step (p2) is an etching and half-etching step. In this etching and half-etching step, the first carrier layer 11 and the second carrier layer 12 are etched with an etchant suitable for the iron-based alloy C constituting the first carrier layer 11 and the iron-based alloy B constituting the second carrier layer 12 . Simultaneous etching. As an etching liquid, the ferric chloride liquid (aqueous solution) whose density|concentration is 40 mass % is used, for example. By the etching, the surface 11a of the first carrier layer 11 without the protective film 15 is etched, and substantially all the first carrier layer 11 is removed to form, for example, an etching hole 11c. At the same time, the surface 12 a of the second carrier layer 12 without the protective film 19 is substantially uniformly half-etched toward the base layer 10 side (Z1 side) to remove substantially all of the second carrier layer 11 . In this case, the etching rate of the second carrier layer 12 becomes greater than the etching rate of the first carrier layer 11 which is more highly resistant to corrosion than the second carrier layer 12 . Therefore, the etching amount (depth) from the second carrier layer 12 side (Z2 side) to the Z1 side becomes larger than the etching amount (depth) from the first carrier layer 11 side (Z1 side) to the Z2 side. Therefore, when the difference in thickness and corrosion resistance of the first carrier layer 11 and the second carrier layer 12 is considered, the adjustment to remove the second carrier layer 12 substantially simultaneously with the formation of the etching hole 11c can be performed. In addition, by adjusting the etching conditions, the depth of the etching hole 11c can be adjusted. In addition, by adjusting the etching conditions, the base material layer 10 from which the second carrier layer 12 has been removed may be half-etched toward the Z1 side. Thereby, the thickness reduction of the metal mask can be achieved.

In Fig. 20, step (q2) is a finishing step. In this finishing step, the protective film 15, the protective film 16, and the protective film 19 are removed from the covering plate 2S, and the entire surface is cleaned. Thereby, a metal mask can be produced. The main body of the metal mask includes a base material portion 10M containing an iron-based alloy A. In the metal mask, the frame portion 11f is annularly arranged at the edge portion on the Z1 side of the base material portion 10M. This frame portion 11f includes a portion of the first carrier layer 11 . The metal mask is, for example, a metal mask 1Ma as shown in FIG. 7 , and is, for example, a metal mask 1Ma having a thickness T _1Ma of the mask pattern 1f (a third modification of the first product example). The main body of the metal mask 1Ma is a single-layer structure. The handling of the covering sheet for a metal mask such as the covering sheet 3S is sufficiently easy, and there is a high possibility that a sufficient thickness reduction of the metal mask can be achieved. In addition, according to the method of manufacturing a metal mask as shown in FIGS. 17 and 20 using the cladding sheet 3S, the operation is sufficiently easy, and a sufficiently thinned metal mask can be manufactured, and a sufficient improvement in productivity can be expected. .

1f, 1fa, 2f, 3f, 100f, 200f: mask pattern (etched hole) 1M: metal mask (first product example) 1Ma: metal mask (modification of the first product example) 1Mb: metal mask ( Second modification of the first product example) 1S: Coating sheet (first embodiment, coating sheet for metal mask) 2M: Metal mask (second product example) 2Ma: Metal mask (second product example) 2S: Coated sheet (Second Embodiment) 3M: Metal Mask (Third Product Example) 3Ma: Metal Mask (Modified Example of Third Product Example) 3S: Coated Sheet (Third Embodiment) ) 10: base material layer 10a, 11a, 12a, 201a, 202a: surface 10b, 10c, 11b, 11c, 12b, 100d, 100e, 201b, 202b: etching hole 10f, 11f: frame portion 10M: base material portion 11: First carrier layer 11M: carrier part (first carrier part) 12: second carrier layer 12M: carrier part (second carrier part) 13-20, 101-104, 203, 204: protective film 100, 200: metal mask Mold 100a: metal sheet 100b: first surface 100c: second surface 200a: cladding sheet 201: first layer 202: second layer T _1M , T _1Ma , T _1Mb , T _1S , T _2M , T _2Ma , T _2S , T _3M , T _3Ma , T _3S , T ₁₀₀ , T ₂₀₀ , T _X , T _Y , T _Y1 , T _Y2 , t0, t1, t2: Thickness Z: Direction Z1, Z2: Side

FIG. 1 is a diagram illustrating a method of manufacturing a metal mask using a metal plate material having a single-layer structure including a single type of metal as a conventional technique. FIG. 2 is a diagram illustrating a method for producing a metal mask using a two-layer structure cladding sheet in which two metals are joined together, as a prior art. FIG. 3 is a diagram showing an example of a cover sheet for a metal mask having a two-layer structure as an embodiment of the present invention. FIG. 4 is a diagram showing an example of a three-layer structure of a covering plate for a metal mask as an embodiment of the present invention. FIG. 5 is a view showing another example of a three-layer structure of the covering plate for a metal mask as an embodiment of the present invention. FIG. 6 is a diagram showing an example of a metal mask having a single-layer structure as an embodiment of the present invention. 7 is a diagram showing another example of a metal mask having a single-layer structure as an embodiment of the present invention. 8 is a diagram showing an example of a metal mask having a two-layer structure as an embodiment of the present invention. 9 is a diagram showing another example of a metal mask having a two-layer structure as an embodiment of the present invention. FIG. 10 is a diagram showing an example of a metal mask having a three-layer structure as an embodiment of the present invention. FIG. 11 is a diagram showing another example of a metal mask having a three-layer structure as an embodiment of the present invention. FIG. 12 is a diagram for illustrating a method for manufacturing a metal mask using a cladding sheet for a metal mask having a two-layer structure. FIG. 13 is a diagram illustrating a method of manufacturing a metal mask using a cladding sheet for a metal mask having a two-layer structure. FIG. 14 is a diagram for illustrating a method for manufacturing a metal mask using a cladding sheet for a metal mask having a two-layer structure. FIG. 15 is a diagram illustrating a method of manufacturing a metal mask using a cladding sheet for a metal mask of a two-layer structure. FIG. 16 is a diagram illustrating a method of manufacturing a metal mask using a cladding sheet for a metal mask having a two-layer structure. FIG. 17 is a diagram illustrating a method of manufacturing a metal mask using a cladding sheet for a metal mask having a three-layer structure. FIG. 18 is a diagram illustrating a method of manufacturing a metal mask using a three-layer structure of the covering plate for a metal mask. FIG. 19 is a diagram illustrating a method of manufacturing a metal mask using a cladding sheet for a metal mask having a three-layer structure. FIG. 20 is a diagram illustrating a method of manufacturing a metal mask using a cladding sheet for a metal mask having a three-layer structure.

1S: Coating sheet (first embodiment, coating sheet for metal mask)

10: Substrate layer

11: The first carrier layer

T _1S , t0, t1: Thickness

Z: direction

Z1, Z2: side

Claims (7)

A cladding sheet for a metal mask, when viewed in a cross-sectional view along a thickness direction, comprising: a base material layer containing an iron-based iron base containing at least one of nickel and cobalt in a range of 30 mass % or more and 50 mass % or less alloy; and a first carrier layer, directly crimped to one side of the base material layer, the base material layer and the first carrier layer can be etched by a homogeneous etching solution, and the base material layer is homogeneous Compared with the first carrier layer, it has higher corrosion resistance to the etching solution. The coating material for a metal mask according to claim 1, wherein etching is performed using a homogeneous etchant under the same environment, the corrosion loss of the base material layer is M _b , and the first When the corrosion loss of a carrier layer is set as M _c1 , the base material layer and the first carrier layer satisfy the relationship of M _b /M _c1 ≦0.9. A cladding sheet for a metal mask, when viewed in a cross-sectional view along a thickness direction, comprising: a base material layer containing an iron-based iron base containing at least one of nickel and cobalt in a range of 30 mass % or more and 50 mass % or less alloy; a first carrier layer, directly crimped to one side of the base material layer; and a second carrier layer, directly crimped to the other side of the base material layer, the base material layer, the first A carrier layer and the second carrier layer can be etched by a homogeneous etchant, and the substrate layer has a higher resistance to the etchant than the first carrier layer and the second carrier layer. Corrosion resistant. The coating material for a metal mask according to claim 3, wherein etching is performed using a homogeneous etchant under the same environment, the corrosion loss of the base material layer is M _b , and the first When the corrosion loss of a carrier layer is set as M _c1 , and the corrosion loss of the second carrier layer is set as M _c2 , the substrate layer, the first carrier layer and the second carrier layer satisfy M _b / The relationship between M _c1 ≦0.9 and M _b /M _c2 ≦0.9. A metal mask is formed using the coating material for a metal mask according to any one of claims 1 to 4 of the scope of application, and includes the iron-based alloy constituting the base material layer. A metal mask is formed by using the coating material for a metal mask according to any one of items 1 to 4 of the patent application scope, and includes: a first metal layer, including a base material layer constituting the the iron-based alloy; and a second metal layer, comprising the metal constituting the first carrier layer, and the metal mask is formed by bonding the first metal layer and the second metal layer. A metal mask is formed using the covering plate for a metal mask according to item 3 or item 4 of the scope of application, and includes: a first metal layer including the an iron-based alloy; a second metal layer comprising the metal comprising the first carrier layer; and a third metal layer comprising the metal comprising the second carrier layer, and the metal mask is the second metal layer , the first metal layer and the third metal layer are sequentially joined together.

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