TW202103928A - Clad sheet for metal mask and metal mask - Google Patents

Abstract

The present invention provides a clad sheet for a metal mask and a metal mask that are easy to handle and can achieve thinning of the metal mask, and ideally can improve the productivity of the metal mask. The clad sheet for metal masks of the present invention includes, in a cross-sectional view cut in the thickness direction, a base material layer containing 30-50% by mass of an iron-based alloy containing at least one of Ni and Co; and a first carrier layer, crimped on one side of the base material layer, wherein the base material layer and the first carrier layer can be etched by the same etching solution, and the base material layer is more resistant to etching by the etching solution than the first carrier layer. The metal mask provided by the invention adopts the disclosed clad sheet.

Description

Cladding sheet for metal mask and metal mask

The present invention relates to a cladding plate and a metal mask for a metal mask. In detail, the present invention relates to a cladding sheet for a metal mask having a metal surface capable of forming a corrosion-resistant protective film for etching solutions, and a metal mask using the cladding sheet for a metal mask, such as The present invention relates to a metal mask cladding sheet used for manufacturing a metal mask for organic electroluminescence (Electro Luminesence, EL) devices and a metal mask for organic EL devices.

For example, Patent Document 1 discloses a method of manufacturing a shielding jig (metal mask) containing a single type of metal for manufacturing an organic EL element. The metal mask is manufactured through the steps shown in FIG. 1. In Figure 1, step (a) is the raw material preparation step. This raw material preparation step which become the metal mask, and the thickness T of a single kind of metal sheet metal 100a of the single-layer structure _100. The metal plate material 100 a includes, for example, an Fe (iron)-Ni (nickel) alloy, and this Fe-Ni alloy contains about 36% by mass of Ni and about 64% by mass of Fe. The Fe-Ni alloy is a well-known 36 alloy with a small linear expansion coefficient of about 1.2×10 ^-6 /°C. The thickness T _{100 of the metal plate material 100 a is,} for example, 10 μm or more and 50 μm or less. Step (b) is the first coating step. In this first coating step, a protective film 101 for forming a predetermined etching pattern is formed on the first surface 100b of the metal plate 100a, and a protective film 102 for preventing etching is formed on the second surface 100c of the metal plate 100a. Step (c) is the first etching step. In this first etching step, an etching solution suitable for the Fe-Ni alloy is used to etch the metal sheet 100a. The portion of the first surface 100b containing the Fe-Ni alloy that does not have the protective film 101 is etched by the first etching to form, for example, an etching hole 100d. Step (d) is the second coating step. In this second coating step, a protective film 103 for forming a predetermined etching pattern is formed on the second surface 100c of the metal plate 100a, and a protective film for preventing etching is formed on the first surface 100b and the etching hole 100d of the metal plate 100a. 104. Step (e) is the second etching step. In this second etching step, the metal plate 100a is etched using an etching solution of the same quality as the etching solution used in the first etching step. The portion of the second surface 100c containing the Fe-Ni alloy that does not have the protective film 103 is etched by the second etching to form, for example, an etching hole 100e. Step (f) is the finishing step. In this finishing step, the protective film 103 and the protective film 104 are removed, and the entire surface of the metal plate 100a is cleaned and finished into the metal mask 100. Through this step, the metal sheet 100a is used to obtain, for example, a metal mask ₁₀₀ having a mask pattern 100f and having a thickness T 100 approximately equal to that of the metal sheet 100a, and a single-layer structure containing Fe-Ni alloy.

In addition, for example, Patent Document 2 discloses a method of manufacturing a metal thick film metal mask for screen printing. The metal mask is manufactured through the steps shown in FIG. 2. In Figure 2, step (a) is the raw material preparation step. In this raw material preparation step, a two-layer structure cladding sheet 200a formed by joining two metals to be a metal mask is prepared. Patent Document 2 does not describe the thickness of the cladding sheet 200a, but it can be considered that the cladding sheet 200a has a thickness T ₂₀₀ corresponding to the metal mask for a thick film. The cladding sheet 200a includes: a first layer 201 including, for example, copper, and a second layer 202 including, for example, stainless steel, which is a different type from the first layer 201. In addition, the etching solution suitable for copper and the etching solution suitable for stainless steel are heterogeneous. Therefore, the first layer 201 containing copper is not etched by the etching solution suitable for the second layer containing stainless steel, and the second layer 202 containing stainless steel is not etched by the etching solution suitable for the second layer containing stainless steel. The etching solution suitable for the first layer 201 containing copper is etched. Step (b) is the covering step. In this coating step, a protective film 203 for forming a predetermined etching pattern is formed on the surface 201a of the first layer 201, and a protective film 204 for forming a predetermined etching pattern is formed on the surface 202a of the second layer 202. Step (c) is the first etching step. In this first etching step, an etching solution suitable for copper is used to etch the surface 201a of the first layer 201. By the first etching, the surface 201a of the first layer 201 containing copper without the protective film 203 is partially etched to form, for example, an etching hole 201b. At this time, the portion of the surface 202a of the second layer 202 containing stainless steel that does not have the protective film 204 is not etched. Step (d) is the second etching step. In this second etching step, the surface 202a of the second layer 202 is etched using an etching solution suitable for stainless steel which is different from the first etching step. By the second etching, the surface 202a of the second layer 202 containing stainless steel without the protective film 204 is partially etched to form, for example, an etching hole 202b. At this time, the etching hole 201b of the first layer 201 containing copper that does not have the protective film 203 is not etched. Step (e) is the finishing step. In this finishing step, the protective film 203 and the protective film 204 are removed, and the entire surface of the cladding plate 200a is cleaned and finished into a metal mask 200. After this step, the cladding plate 200a is used to obtain, for example _{, a metal mask 200 with a mask pattern 200f and a thickness T 200} that is approximately the same as that of the cladding plate 200a, and a two-layer structure including copper and stainless steel. [Prior Art Document] [Patent Document]

[Patent Document 1] Japanese Patent No. 643072 [Patent Document 2] Japanese Patent Publication No. 62-21629

[Problems to be Solved by the Invention] In recent years, further high-definition mask patterns have been desired. Therefore, it is necessary to further reduce the thickness of the metal mask. The thickness of the target metal mask is, for example, 20 μm or less, and desirably 15 μm or less. _{The thickness T 100 of the} aforementioned single-layered metal sheet 100a is, for example, 10 μm or more and 50 μm or less, but such thin-walled metal sheets are prone to wrinkles or bending. For example, although it is technically possible to further reduce the thickness of a metal sheet with a thickness of 20 μm, it is difficult to handle the metal sheet that is simply thinned due to a decrease in mechanical strength. It can be considered that the above-mentioned two-layer structure cladding sheet 200a has a thickness corresponding to that of the metal mask for thick film. If the two-layer structure of the cladding sheet is simply further thinned, the asymmetry of the layer structure in the thickness direction (the Z direction shown in FIG. 2) causes the cladding sheet to warp. Therefore, it is not technically easy to obtain a cladding sheet with a thickness of 20 μm or less, for example. The cladding sheet with large warpage is difficult to handle, and it is not easy to manufacture a metal mask. Under such circumstances, it is necessary to develop a metal mask sheet material that can further reduce the thickness of the metal mask.

When developing a sheet material for a metal mask, it is expected that in addition to thinning and ease of handling, it is desirable to ensure that the productivity of the metal mask is the same as before, and it is more desirable to improve the productivity of the metal mask. In the above-mentioned manufacturing method of a metal mask using a single type of metal plate material 100a, at least two coating steps and two etching steps are required. In addition, in the above-mentioned method of manufacturing a metal mask using a two-layer structure cladding sheet 200a formed by joining different types of metals, compared with the method of using a single type of metal sheet 100a, the number of coating steps can be reduced. . However, even if the two-layer structure of the cladding plate 200a is used, at least two etching steps are required to form the mask pattern 200f, and the etching solution used in each etching step cannot be shared. Therefore, the preferable change of the sheet material for metal masks preferably changes the manufacturing process of the metal mask, which may lead to an increase in the productivity of the metal mask.

The object of the present invention is to provide a metal mask sheet material that is easy to handle and can achieve thinning of the metal mask, and ideally can improve the productivity of the metal mask, and to provide a sheet material using the metal mask sheet Metal mask. [Technical means to solve the problem]

The inventors of the present invention found that by joining two metals that can be etched by the same etching solution in a two-layer structure cladding sheet formed by joining two metals, the above-mentioned problem can be solved, and they thought The composition of the invention of the cladding sheet for metal masks.

One invention of the cladding sheet material for metal masks, in a cross-sectional view cut in the thickness direction, includes: a base material layer containing iron containing at least one of Ni and Co in a range of 30% by mass to 50% by mass Base alloy; and a first carrier layer, crimped on one side of the substrate layer, and the substrate layer and the first carrier layer can be etched by a homogeneous etching solution, and the substrate layer is the same Compared with the first carrier layer, it has higher corrosion resistance to the etching solution. In the invention, it is preferable to use a homogeneous etching solution for etching under the same environment, and when the corrosion loss of the substrate layer is set to M _b , and the corrosion loss of the first carrier layer is set to M _c1 , The substrate layer and the first carrier layer satisfy a relationship of M _b /M _c1 ≦0.9.

In addition, an invention of the cladding sheet material for metal masks includes, in a cross-sectional view cut in the thickness direction, a base material layer containing at least one of Ni and Co in a range of 30% by mass to 50% by mass. The iron-based alloy; the first carrier layer, crimped on one side of the substrate layer; and the second carrier layer, crimped on the other side of the substrate layer, and the substrate layer, the The first carrier layer and the second carrier layer can be etched by a homogeneous etching solution, and the substrate layer is more resistant to the etching solution than the first carrier layer and the second carrier layer. High corrosion resistance. In the invention, it is preferable to use a homogeneous etching solution for etching under the same environment, and set the corrosion loss of the substrate layer as M _b , and set the corrosion loss of the first carrier layer as _Mc1 , and set the corrosion loss of the substrate layer as M c1. When the corrosion loss of the second carrier layer is set to _Mc2 , the substrate layer, the first carrier layer, and the second carrier layer satisfy the requirements of M _b /M _c1 ≦0.9 and M _b /M _c2 ≦0.9 relationship.

The structure of the invention of the metal mask is conceived by using any of the above-mentioned cladding plates for metal masks. That is, one invention of the metal mask is to use any one of the cladding plates for a metal mask including the substrate layer and the first carrier layer or the substrate layer, the first carrier layer, and The any one of the metal masks of the second carrier layer is formed by a cladding sheet material, and includes the iron-based alloy constituting the base layer.

In addition, one invention of the metal mask is to use any one of the cladding plates for a metal mask including the base layer and the first carrier layer or the base layer, the first carrier layer, and The any one of the metal masks of the second carrier layer is formed by a cladding sheet material, and includes: a first metal layer including the iron-based alloy constituting the substrate layer; and a second metal layer including The metal constituting the first carrier layer, and the metal mask is formed by joining the first metal layer and the second metal layer.

In addition, one invention of the metal mask is formed by using any one of the metal mask cladding plates including the base layer, the first carrier layer, and the second carrier layer, and includes: A metal layer including the iron-based alloy constituting the substrate layer; a second metal layer including the metal constituting the first carrier layer; and a third metal layer including the metal constituting the second carrier layer, And the metal mask is formed by sequentially joining the second metal layer, the first metal layer, and the third metal layer. [Effects of the invention]

According to the present invention, it is possible to obtain a cladding sheet for a metal mask that is easy to operate and can achieve thinning of the metal mask. If the cladding sheet for metal masks is used, a metal mask that is easy to handle and thinner than before can be obtained. In addition, if the cladding sheet material for metal masks is used, the productivity of the metal mask can be expected to improve.

The present invention will be described with an embodiment embodying the cladding sheet material for a metal mask according to the present invention.

<First Embodiment> The first embodiment of the cladding sheet for metal masks according to the present invention is shown in FIG. 3. Fig. 3 is a cross-sectional view of the cladding sheet 1S for metal masks (hereinafter referred to as "cladding sheet 1S") cut in the thickness direction (Z direction).

The cladding sheet 1S has a two-layer structure when viewed in a cross section cut in the thickness direction. The cladding sheet 1S (thickness T _1S ) includes a base layer 10 (thickness t0), and a first carrier layer 11 (thickness t1) crimped on one side (Z1 side) of the base layer 10. The press-bonded form of the base material layer 10 and the first carrier layer 11 is obtained, for example, by superimposing the plate material used to form the base material layer 10 and the plate material used to form the first carrier layer 11 Rolling (coating and rolling), if necessary, carry out diffusion annealing. In addition, the cladding sheet 1S is an example of the "cladding sheet for metal masks" in the scope of the patent application, the substrate layer 10 is an example of the "substrate layer" in the scope of the patent application, and the first carrier layer 11 is the scope of the patent application. An example of the "first carrier layer".

The base material layer 10 constituting the cladding sheet 1S can be used as the main body of the metal mask. In this case, it is possible to obtain a metal mask of a single-layer structure including a portion of the base layer 10, or a metal mask of a two-layer structure including a portion of the base layer 10 and a portion of the first carrier layer 11 can be obtained. As described above, the thickness of the target metal mask is, for example, 20 μm or less, and desirably 15 μm or less. In contrast to the target, from the viewpoint of thinning, _{the upper limit of the thickness T 1S} of the cladding sheet 1S or the thickness t0 of the base layer 10 when the base layer 10 is used as the main body of the metal mask The limit is preferably 20 μm or less, more preferably 15 μm or less, and even more preferably 10 μm or less. In addition, from the viewpoint of ease of handling, _{the lower limit of the thickness T 1S} of the cladding sheet 1S or the lower limit of the thickness t0 of the base layer 10 when the base layer 10 part is used as the main body of the metal mask It is preferably 1 μm or more, more preferably 3 μm or more, and even more preferably 5 μm or more. The thinner the thickness T _{1S of} the cladding sheet 1S, or the thinner the thickness t0 of the base layer 10 when the base layer 10 becomes the main body of the metal mask, the more the amount of side etching is suppressed. Therefore, the amount of side etching is suppressed by etching. The dimensional accuracy of the formed mask pattern such as the etching hole is improved, and a metal mask with a higher-precision mask pattern can be obtained.

The base layer 10 constituting the cladding sheet 1S includes an iron-based alloy. This iron-based alloy contains at least one of Ni (nickel) and Co (cobalt) in a range of 30% by mass or more and 50% by mass or less. The remainder other than Ni and Co may be Fe (iron) and inevitable impurities, or may also contain one or more additional elements. In addition, the iron-based alloy containing Ni and Co preferably has a Co content of 10% by mass or less (that is, Ni is 20% by mass or more and 40% by mass or less). An iron-based alloy containing at least one of Ni and Co in the range of 30% by mass to 50% by mass relative to Fe. In most cases, for example, when using a metal mask for organic EL elements, heating during vapor deposition is suppressed The effective linear expansion coefficient in terms of deformation (strain) is small, and it is suitable for forming a sheet material for metal masks. The iron-based alloy may contain elements (additional elements) other than Ni and Co in a range of 10% by mass or less. The additional elements are, for example, Mn (manganese), Mo (molybdenum), Nb (niobium), Cr (chromium), and the like. Iron-based alloys containing these additional elements in the range of 0% by mass or more and 10% by mass or less may have 0.2% endurance, tensile strength, elongation, Young's modulus, hardness, linear expansion coefficient, etc. as constituent metal masks The mechanical strength and various characteristics of the metal material of the plate are preferable. The base material layer 10 containing the iron-based alloy can be etched by a usual etching solution (for example, ferric chloride solution, etc.) suitable for the iron-based alloy.

The first carrier layer 11 constituting the cladding sheet 1S is crimped on one side (the Z1 side) of the base layer 10. The first carrier layer 11 is effective for reinforcement of the thinned base layer 10 that becomes the main body of the metal mask, and is effective for improving the mechanical strength of the thin-walled cladding sheet 1S. The first carrier layer 11 serves as a carrier for the thinned base layer 10, facilitating the handling of the thinned base layer 10, and suppressing large warpage of the cladding sheet 1S including the base layer 10 It contributes to the stabilization of etching. In addition, the first carrier layer 11 can serve as the main body of the metal mask in the same manner as the base layer 10. In this case, it is possible to obtain a metal mask of a single-layer structure including a portion of the first carrier layer 11, or a metal mask of a two-layer structure including a portion of the first carrier layer 11 and a portion of the base material layer 10 can be obtained. The thickness t1 of the first carrier layer 11 may be set in consideration of various characteristics of the entire cladding sheet 1S in addition to the various characteristics of the base layer 10. For example, from the viewpoint of ease of operation, when the purpose is to strengthen the base layer 10, the thickness t1 of the first carrier layer 11 is preferably 5 μm or more and 100 μm or less, more preferably 20 μm or more and 100 μm or less . For example, when the first carrier layer 11 is used as the main body of the metal mask, the upper limit of the thickness t1 of the first carrier layer 11 is preferably 20 μm or less, more preferably 15 μm or less, and still more preferably 10 μm or less.

The first carrier layer 11 can be etched by an etching solution that can etch the substrate layer 10. That is, the base layer 10 and the first carrier layer 11 can be simultaneously etched by a homogeneous etching solution (for example, ferric chloride solution, etc.). In the present invention, when the substrate layer 10 and the first carrier layer 11 can be etched at the same time, as long as the substrate layer 10 is more resistant to the etching solution than the first carrier layer 11. Therefore, when the etching of the base layer 10 and the first carrier layer 11 is simultaneously started by the etching solution, the base layer 10 is less likely to be etched than the first carrier layer 11, so that the base layer 10 can be made The etching speed is slower than the etching speed of the first carrier layer 11. Therefore, for example, when etching holes are formed in the base layer 10 and the first carrier layer 11 at the same time, the depth of the etching holes formed from the surface (Z2 side) of the base layer 10 toward the Z1 side is greater than that from the surface of the first carrier layer 11. (Z1 side) The depth of the etching hole formed toward the Z2 side is shallower. If a metal mask sheet (cladding sheet 1S) that can obtain such a difference in the depth of the etching holes is used, a metal mask having a mask pattern in which the holes are arranged on one of the faces can be constructed The depth of is different from the depth of the hole arranged on the other side.

In addition, it is preferable to use a homogeneous etching solution to etch the cladding sheet 1S under the same environment, and set the corrosion loss of the base layer 10 as M _b and the corrosion loss of the first carrier layer 11 as _Mc1 . The material layer 10 and the first carrier layer 11 satisfy the relationship of M _b /M _c1 ≦0.9. When the cladding sheet 1S that satisfies the above relationship etches the base layer 10 and the first carrier layer 11 at the same time, it can reliably make the etching rate of the base layer 10 slower than the etching rate of the first carrier layer 11. Thus, for example, when an etching hole is to be formed at the same time, the depth of the etching hole formed from the surface (Z2 side) of the base layer 10 to the Z1 side can be more reliably than that from the surface (Z1 side) of the first carrier layer 11 The depth of the etching hole formed on the Z2 side is shallower. In addition, the simultaneously etched base layer 10 and the first carrier layer 11 satisfy the relationship of M _b /M _c1 >0 (M _b >0, M _c1 >0).

Include one case, it was confirmed that, when at a concentration of 40% ferric chloride solution (aq) the plate material A and the sheet B is etched, corrosion decrease Corrosion decrease (M _A) A sheet of the sheet B (M The ratio of _{B ) (M A} /M _B ) becomes about 0.89, wherein the sheet A contains an iron-based alloy containing about 32% by mass of Ni and about 5.5% by mass Co, and the sheet B contains about 36% by mass Iron-based alloy of Ni. When the sheet material A having the above relationship is used for the base layer 10 (thickness t0) and the sheet material B is used for the first carrier layer 11 (thickness t1=t0) to form the cladding sheet 1S, the M _b /M _c1 becomes approximately 0.89. Therefore, the base layer 10 and the first carrier layer 11 satisfy the relationship of M _b /M _c1 ≦0.9.

The cladding sheet 1S preferably has 0.2% endurance, tensile strength, elongation, Young's modulus, hardness, linear expansion coefficient, and other mechanical strength and various characteristics suitable for metal masks. For example, from the viewpoint of facilitating handling, a cladding sheet 1S having a large tensile strength and a large Young's modulus is preferable. In this case, it is particularly preferable that the cladding sheet material 1S has a tensile strength of 700 MPa or more and a Young's modulus of 100 GPa or more of the base layer 10 that is the main body of the metal mask. In addition, for example, from the viewpoint of suppressing heating deformation (strain) during vapor deposition when using a metal mask for an organic EL element, a cladding sheet 1S with a small warpage due to heating is preferable, and a cladding sheet is preferably formed The difference between the coefficient of linear expansion of the base layer 10 of 1S and the coefficient of linear expansion of the first carrier layer 11 is small. In this case, it is preferable that the linear expansion coefficient of the base layer 10 is 5 ppm/° C. or less, and the linear expansion coefficient of the first carrier layer 11 is within ±2 ppm/° C. relative to the linear expansion coefficient of the base layer 10.

<Second Embodiment> The second embodiment of the cladding sheet for metal masks according to the present invention is shown in FIG. 4. In addition, the symbols shown in FIG. 3 are cited in FIG. 4 for convenience. Fig. 4 is a cross-sectional view of the cladding sheet 2S for metal masks (hereinafter referred to as "cladding sheet 2S") cut in the thickness direction (Z direction). The cladding sheet 2S shown in FIG. 4 and the cladding sheet 1S shown in FIG. 3 have different number of layers. The base layer 10 and the first carrier layer 11 of the cladding sheet 2S and the base layer 10 and the first carrier layer 11 of the cladding sheet 1S may or may not have the same configuration.

The cladding sheet 2S has a three-layer structure when viewed in a cross section cut along the thickness direction. The cladding sheet 2S (thickness T _2S ) includes a base layer 10 (thickness t0), a first carrier layer 11 (thickness t1) crimped on one side (Z1 side) of the base layer 10, and a first carrier layer 11 (thickness t1) crimped on the base The second carrier layer 12 (thickness t2) on the other side (Z2 side) of the material layer 10. The thicknesses of the first carrier layer 11 and the second carrier layer 12 shown in FIG. 4 are approximately the same (t1=t2). The crimping form of the substrate layer 10, the first carrier layer 11, and the second carrier layer 12 can be obtained, for example, by combining the plate material used to form the substrate layer 10 and the plate material used to form the first carrier layer 11 And the sheet material used to form the second carrier layer 12 is rolled (coated rolling) in a superposed state, and diffusion annealing is performed as necessary. In addition, the cladding sheet 2S is an example of the "cladding sheet for metal masks" in the scope of the patent application, the substrate layer 10 is an example of the "substrate layer" in the scope of the patent application, and the first carrier layer 11 is the scope of the patent application. An example of the "first carrier layer", and the second carrier layer 12 is an example of the "second carrier layer" in the scope of the patent application.

The base material layer 10 constituting the cladding sheet 2S can be used as the main body of the metal mask. In this case, it is possible to obtain a metal mask of a single-layer structure including a portion of the base layer 10, or a metal mask of a two-layer structure including a portion of the base layer 10 and a portion of the first carrier layer 11, or Obtain a two-layer metal mask including a base layer 10 part and a second carrier layer 12 part, and also obtain a three-layer structure including a first carrier layer 11 part, a base layer 10 part, and a second carrier layer 12 part Metal mask. As described above, the thickness of the target metal mask is, for example, 20 μm or less, and desirably 15 μm or less. In contrast to the target, from the viewpoint of thinning, _{the upper limit of the thickness T 2S} of the cladding sheet 2S or the thickness t0 of the base layer 10 when the base layer 10 part is used as the main body of the metal mask The limit is preferably 20 μm or less, more preferably 15 μm or less, and even more preferably 10 μm or less. In addition, from the viewpoint of ease of handling, _{the lower limit of the thickness T 2S} of the cladding sheet 2S or the lower limit of the thickness t0 of the base layer 10 when the base layer 10 part is used as the main body of the metal mask It is preferably 1 μm or more, more preferably 3 μm or more, and even more preferably 5 μm or more. The thinner the thickness T _{2S of} the cladding sheet 2S, or the thinner the thickness t0 of the base layer 10 when the base layer 10 part is used as the main body of the metal mask, the more the amount of side etching of the etching is suppressed, so it is formed by etching The dimensional accuracy of mask patterns such as etching holes is improved, and a metal mask with a higher-precision mask pattern can be obtained.

The base layer 10 constituting the cladding sheet 2S includes an iron-based alloy. This iron-based alloy contains at least one of Ni and Co in a range of 30% by mass or more and 50% by mass or less. The remainder other than Ni and Co may be Fe and unavoidable impurities, or may further include one or more additional elements. In addition, the iron-based alloy containing Ni and Co preferably has a Co content of 10% by mass or less (that is, Ni is 20% by mass or more and 40% by mass or less). An iron-based alloy containing at least one of Ni and Co in the range of 30% by mass to 50% by mass relative to Fe. In most cases, for example, when using a metal mask for organic EL elements, heating during vapor deposition is suppressed The effective linear expansion coefficient in terms of deformation (strain) is small, and it is suitable for forming a sheet material for metal masks. The iron-based alloy may contain elements (additional elements) other than Ni and Co in a range of 10% by mass or less. The additional elements are, for example, Mn, Mo, Nb, Cr, and the like. Iron-based alloys containing these additional elements in the range of 0% by mass or more and 10% by mass or less may have 0.2% endurance, tensile strength, elongation, Young's modulus, hardness, linear expansion coefficient, etc. as constituent metal masks The mechanical strength and various characteristics of the metal material of the plate are preferable. The base material layer 10 containing the iron-based alloy can be etched by a usual etching solution (for example, ferric chloride solution, etc.) suitable for the iron-based alloy.

The first carrier layer 11 constituting the cladding sheet 2S is crimped on one side (the Z1 side) of the base layer 10. In addition, the second carrier layer 12 constituting the cladding sheet 2S is pressure-bonded to the other side (Z2 side) of the base layer 10. The first carrier layer 11 and the second carrier layer 12 are effective for reinforcing the thinned base material layer 10 that becomes the main body of the metal mask, and are effective for improving the mechanical strength of the thin-walled cladding sheet 2S. The first carrier layer 11 and the second carrier layer 12 serve as a carrier for the thinned base layer 10, which facilitates the operation of the thinned base layer 10, and contributes to the coating containing the base layer 10 Stabilization of 2S etching of the clad sheet. In addition, the first carrier layer 11 and the second carrier layer 12 can serve as the main body of the metal mask in the same manner as the base layer 10. In this case, it is possible to obtain a metal mask of a single-layer structure including a portion of the first carrier layer 11, or a metal mask of a single-layer structure including a portion of the second carrier layer 12, or a metallic mask including a first carrier A metal mask with a two-layer structure consisting of a portion of layer 11 and a portion of base layer 10 can also be obtained with a two-layer structure including a portion of a second carrier layer 12 and a portion of base layer 10, and a metal mask containing a first carrier can also be obtained. The metal mask of the three-layer structure of the layer 11 part, the base layer 10 part and the second carrier layer 12 part. From the viewpoint of ease of operation, when the purpose is to strengthen the base layer 10, the thickness t1 of the first carrier layer 11 and the thickness t2 of the second carrier layer 12 are each preferably 5 μm or more and 100 μm or less, and more It is preferably 20 μm or more and 100 μm or less. When the first carrier layer 11 part or the second carrier layer 12 part is used as the main body of the metal mask, the upper limit value of the thickness t1 of the first carrier layer 11 and the upper limit value of the thickness t2 of the second carrier layer 12 are respectively preferable 20 μm or less, more preferably 15 μm or less, still more preferably 10 μm or less.

Both the first carrier layer 11 and the second carrier layer 12 can be etched by an etching solution that can etch the substrate layer 10. That is, each combination of the base material layer 10 and the first carrier layer 11, the base material layer 10 and the second carrier layer 12, and the first carrier layer 11 and the second carrier layer 12 can be made from a homogeneous etching solution (for example, a ferric chloride solution, etc.). ) Simultaneous etching. In the present invention, when the substrate layer 10 and the first carrier layer 11 can be etched at the same time, when the substrate layer 10 and the second carrier layer 12 can be etched at the same time, and the first carrier layer 11 and the second carrier layer 12 can be etched at the same time In each case, it suffices that the substrate layer 10 is more resistant to the etching solution than the first carrier layer 11 and the second carrier layer 12. In addition, the first carrier layer 11 may be more resistant to the same etching solution than the second carrier layer 12, or the second carrier layer 12 may be more resistant to the same etching solution than the first carrier layer 11. High corrosion resistance. Thus, for example, if the first carrier layer 11 and the second carrier layer 12 are formed of the same material and the same thickness (t1=t2), the first carrier layer 11 and the second carrier layer 12 are half-etched at the same time, thereby The first carrier layer 11 and the second carrier layer 12 can be removed at the same time, so that the surface of one side (Z1 side) and the surface of the other side (Z2 side) of the base layer 10 are exposed at the same time, and the base layer 10 is obtained. Single-layer structure of sheet metal. In this case, by adjusting the conditions of the half-etching, it is possible to obtain a cladding sheet having a three-layer structure with the first carrier layer 11 and the second carrier layer 12 each having a predetermined thickness and having a three-layer structure on both sides of the base layer 10. In addition, if the first carrier layer 11 and the second carrier layer 12 are made of different materials, it is also possible to use only the first carrier layer 11 or the second carrier layer 12 that has higher corrosion resistance than the etching solution. One remains at the specified thickness. In this case, it is possible to obtain a two-layer cladding sheet in which only one of the first carrier layer 11 or the second carrier layer 12 has a predetermined thickness and is provided on the base layer 10.

Compared with the first carrier layer 11 and the second carrier layer 12, the base layer 10 is more resistant to the etching solution. Therefore, when the etching solution is used to start the etching of the two-layer structure cladding sheet, the substrate layer 10 is less likely to be etched than the first carrier layer 11 (or the second carrier layer 12). The etching speed of the base material layer 10 can be made slower than the etching speed of the first carrier layer 11 (or the second carrier layer 12). Therefore, for example, when etching holes are simultaneously formed in a two-layer cladding sheet including the base layer 10 and the first carrier layer 11, the depth of the etching holes formed from the surface (Z2 side) of the base layer 10 to the Z1 side is It is shallower than the depth of the etching hole formed from the surface (Z1 side) of the first carrier layer 11 to the Z2 side. Alternatively, when etching holes are simultaneously formed in a two-layer cladding sheet including the base layer 10 and the second carrier layer 12, the depth of the etching holes formed from the surface (Z1 side) of the base layer 10 to the Z2 side is greater than The depth of the etching hole formed from the surface (Z2 side) of the second carrier layer 12 toward the Z1 side is shallower. If a metal mask sheet (cladding sheet 2S) that can obtain such a difference in the depth of the etching holes is used, a metal mask having a mask pattern in which the holes are arranged on one of the faces can be constructed The depth of is different from the depth of the hole arranged on the other side.

In addition, it is preferable to use a homogeneous etching solution to etch the cladding sheet 2S under the same environment, and set the corrosion loss of the base layer 10 as M _{b , the corrosion loss of the first carrier layer 11 as Mc1} , and the first carrier layer 11 as M c1. When the corrosion loss of the second carrier layer 12 is set to _Mc2 , the base layer 10, the first carrier layer 11, and the second carrier layer 12 satisfy the relationship of M _b /M _c1 ≦0.9 and M _b /M _c2 ≦0.9. The cladding sheet 2S that satisfies the above relationship can reliably make the etching speed of the substrate layer 10 slower than the etching speed of the first carrier layer 11 when the substrate layer 10 and the first carrier layer 11 are simultaneously etched, or can be When the base material layer 10 and the second carrier layer 12 are simultaneously etched, the etching speed of the base material layer 10 is reliably made slower than the etching speed of the second carrier layer 12. Thus, for example, when an etching hole is to be formed at the same time, the depth of the etching hole formed from the surface (Z2 side) of the base layer 10 to the Z1 side can be more reliably than that from the surface (Z1 side) of the first carrier layer 11 The depth of the etching hole formed on the Z2 side is shallower, or the depth of the etching hole formed from the surface of the base layer 10 (Z1 side) to the Z2 side can be made more than that from the surface of the second carrier layer 12 (Z2 side). The depth of the etching hole formed on the Z1 side is shallower. In addition, the simultaneously etched base layer 10 and the first carrier layer 11 satisfy the relationship of M _b /M _c1 >0 (M _b >0, _Mc1 >0), or the simultaneously etched base layer 10 and the second carrier layer The carrier layer 12 satisfies the relationship of M _b /M _c2 >0 (M _b >0, _Mc2 >0). In addition, the first carrier layer 11 and the second carrier layer 12 may satisfy _{the relationship of Mc1} /M _c2 ≦0.9, or may satisfy the relationship of _Mc2 /M _c1 ≦0.9.

The cladding sheet 2S preferably has 0.2% endurance, tensile strength, elongation, Young's modulus, hardness, linear expansion coefficient, and other mechanical strength and various characteristics suitable for metal masks. For example, from the viewpoint of facilitating handling, a cladding sheet 2S having a large tensile strength and a large Young's modulus is preferable. In this case, it is particularly preferable that the cladding sheet 2S has a tensile strength of 700 MPa or more and a Young's modulus of 100 GPa or more of the base material layer 10 that is the main body of the metal mask. In addition, for example, from the viewpoint of suppressing heating deformation (strain) during vapor deposition when using a metal mask for an organic EL element, the cladding sheet 2S with little warpage due to heating is preferable, and it is preferable to constitute the cladding sheet The linear expansion coefficient of the 2S base layer 10, the linear expansion coefficient of the first carrier layer 11, and the linear expansion coefficient of the second carrier layer 12 have a small difference from each other. In this case, it is preferable that the linear expansion coefficient of the base layer 10 is 5 ppm/°C or less, and the linear expansion coefficient of the first carrier layer 11 and the linear expansion coefficient of the second carrier layer 12 are relative to the linear expansion coefficient of the base layer 10, respectively. The expansion coefficient is within ±2 ppm/℃.

<The third embodiment> The third embodiment of the cladding sheet for metal masks according to the present invention is shown in FIG. 5. In addition, in FIG. 5, the symbols shown in FIGS. 3 and 4 are cited for convenience. Fig. 5 is a cross-sectional view of the cladding sheet 3S for metal masks (hereinafter referred to as "cladding sheet 3S") cut in the thickness direction (Z direction). The thickness of the second carrier layer 12 of the cladding sheet 3S shown in FIG. 5 is different from that of the cladding sheet 2S shown in FIG. 4 (for convenience, the symbols of the thickness are all expressed as t2). The base layer 10, the first carrier layer 11, and the second carrier layer 12 constituting the cladding sheet 3S are different from the structure except that the thickness t1 of the first carrier layer 11 and the thickness t2 of the second carrier layer 12 are different (t1>t2). The base material layer 10, the first carrier layer 11, and the second carrier layer 12 of the cladding sheet 2S may or may not have the same structure.

The cladding sheet 3S has a three-layer structure when viewed in a cross section cut along the thickness direction. The cladding sheet 3S (thickness T _3S ) includes a substrate layer 10 (thickness t0), a first carrier layer 11 (thickness t1) crimped on one side (Z1 side) of the substrate layer 10, and a first carrier layer 11 (thickness t1) crimped on the substrate The second carrier layer 12 (thickness t2) on the other side (Z2 side) of the material layer 10. The thickness of the first carrier layer 11 and the second carrier layer 12 shown in FIG. 5 are different (t1>t2). In addition, the cladding sheet 3S can, for example, make the thickness t2 of the second carrier layer 12 thicker than the thickness t1 of the first carrier layer 11 (t1<t2). The crimping form of the substrate layer 10, the first carrier layer 11, and the second carrier layer 12 can be obtained, for example, by combining the plate material used to form the substrate layer 10 and the plate material used to form the first carrier layer 11 And the sheet material used to form the second carrier layer 12 is rolled (coated rolling) in a superposed state, and diffusion annealing is performed as necessary. In addition, the cladding sheet 3S is an example of the "cladding sheet for metal masks" in the scope of the patent application, the substrate layer 10 is an example of the "substrate layer" in the scope of the patent application, and the first carrier layer 11 is the scope of the patent application. An example of the "first carrier layer", and the second carrier layer 12 is an example of the "second carrier layer" in the scope of the patent application.

The base layer 10 constituting the cladding sheet 3S can be used as the main body of the metal mask. In this case, it is possible to obtain a metal mask of a single-layer structure including a portion of the base layer 10, or a metal mask of a two-layer structure including a portion of the base layer 10 and a portion of the first carrier layer 11, or A metal mask with a two-layer structure of the base material layer 10 part and the second carrier layer 12 part is obtained, and a three-layer structure including the first carrier layer 11 part, the base material layer 10 part and the second carrier layer 12 part can also be obtained. Metal mask. As described above, the thickness of the target metal mask is, for example, 20 μm or less, and desirably 15 μm or less. In contrast to the target, from the viewpoint of thinning, _{the upper limit of the thickness T 3S} of the cladding sheet 3S or the upper limit of the thickness t0 of the base layer 10 when the base layer 10 part is used as the main body of the metal mask The limit is preferably 20 μm or less, more preferably 15 μm or less, and still more preferably 10 μm or less. In addition, from the viewpoint of ease of handling, _{the lower limit of the thickness T 3S} of the cladding sheet 3S or the lower limit of the thickness t0 of the base layer 10 when the base layer 10 part is used as the main body of the metal mask It is preferably 1 μm or more, more preferably 3 μm or more, and even more preferably 5 μm or more. The thinner the thickness T _{3S of} the cladding sheet 3S, or the thinner the thickness t0 of the base layer 10 when the base material layer 10 part is used as the main body of the metal mask, the more the amount of side etching of the etching is suppressed, so it is formed by etching The dimensional accuracy of mask patterns such as etching holes is improved, and a metal mask with a higher-precision mask pattern can be obtained.

The base layer 10 constituting the cladding sheet 3S includes an iron-based alloy. This iron-based alloy contains at least one of Ni and Co in a range of 30% by mass or more and 50% by mass or less. The remainder other than Ni and Co may be Fe and inevitable impurities, or may contain one or more additional elements. In addition, the iron-based alloy containing Ni and Co preferably has a Co content of 10% by mass or less (that is, Ni is 20% by mass or more and 40% by mass or less). An iron-based alloy containing at least one of Ni and Co in the range of 30% by mass to 50% by mass relative to Fe. In most cases, for example, when using a metal mask for organic EL elements, heating during vapor deposition is suppressed The effective coefficient of linear expansion in terms of deformation (strain) is small, and it is suitable for forming a sheet material for metal masks. The iron-based alloy may contain elements (additional elements) other than Ni and Co in a range of 10% by mass or less. The additional elements are, for example, Mn, Mo, Nb, Cr, and the like. Iron-based alloys containing these additional elements in the range of 0% by mass or more and 10% by mass or less may have 0.2% endurance, tensile strength, elongation, Young's modulus, hardness, linear expansion coefficient, etc. as constituent metal masks The mechanical strength and various characteristics of the metal material of the plate are preferable. The base material layer 10 containing the iron-based alloy can be etched by a usual etching solution (for example, ferric chloride solution, etc.) suitable for the iron-based alloy.

The first carrier layer 11 constituting the cladding sheet 3S is crimped on one side (the Z1 side) of the base layer 10. In addition, the second carrier layer 12 constituting the cladding sheet 3S is pressure-bonded to the other side (Z2 side) of the base layer 10. The first carrier layer 11 and the second carrier layer 12 are effective for reinforcing the thinned base material layer 10 that becomes the main body of the metal mask, and are effective for improving the mechanical strength of the thin-walled cladding sheet 3S. The first carrier layer 11 and the second carrier layer 12 serve as a carrier for the thinned base layer 10, which facilitates the operation of the thinned base layer 10, and contributes to the coating containing the base layer 10 Stabilization of 3S etching of the clad sheet. In addition, the first carrier layer 11 and the second carrier layer 12 can serve as the main body of the metal mask in the same manner as the base layer 10. In this case, it is possible to obtain a metal mask of a single-layer structure including a portion of the first carrier layer 11, or a metal mask of a single-layer structure including a portion of the second carrier layer 12, or a metallic mask including a first carrier A metal mask with a two-layer structure consisting of a portion of layer 11 and a portion of base layer 10 can also be obtained with a two-layer structure including a portion of a second carrier layer 12 and a portion of base layer 10, and a metal mask containing a first carrier can also be obtained The metal mask of the three-layer structure of the layer 11 part, the base layer 10 part and the second carrier layer 12 part. From the viewpoint of ease of operation, when the purpose is to strengthen the base layer 10, the thickness t1 of the first carrier layer 11 and the thickness t2 of the second carrier layer 12 are each preferably 5 μm or more and 100 μm or less, and more It is preferably 20 μm or more and 100 μm or less. When the first carrier layer 11 part or the second carrier layer 12 part is used as the main body of the metal mask, the upper limit value of the thickness t1 of the first carrier layer 11 and the upper limit value of the thickness t2 of the second carrier layer 12 are respectively preferable 20 μm or less, more preferably 15 μm or less, still more preferably 10 μm or less.

Both the first carrier layer 11 and the second carrier layer 12 can be etched by an etching solution that can etch the substrate layer 10. That is, each combination of the base material layer 10 and the first carrier layer 11, the base material layer 10 and the second carrier layer 12, and the first carrier layer 11 and the second carrier layer 12 can be made from a homogeneous etching solution (for example, a ferric chloride solution, etc.). ) Simultaneous etching. In the present invention, when the substrate layer 10 and the first carrier layer 11 can be etched at the same time, when the substrate layer 10 and the second carrier layer 12 can be etched at the same time, and the first carrier layer 11 and the second carrier layer 12 can be etched at the same time Each, as long as the substrate layer 10 is more resistant to the etching solution than the first carrier layer 11 and the second carrier layer 12. In addition, the first carrier layer 11 may be more resistant to the same etching solution than the second carrier layer 12, or the second carrier layer 12 may be more resistant to the same etching solution than the first carrier layer 11. High corrosion resistance. Thus, for example, by simultaneously half-etching the first carrier layer 11 and the second carrier layer 12 with different thicknesses (for example, t1>t2), a part of the first carrier layer 11 and all of the second carrier layer 12 can be removed at the same time. Only the surface of one side (Z2 side) of the base layer 10 is exposed, and the first carrier layer 11 has a predetermined thickness and is provided with a two-layer structure on the other side (Z1 side) of the base layer 10 Cladding board. In addition, such a two-layer structure cladding sheet can also be obtained by, for example, the following method: the first carrier layer 11 and the second carrier layer 12 are made of different materials, so that only the etching solution is more resistant to corrosion. Either the first carrier layer 11 or the second carrier layer 12 remains with a predetermined thickness. In this case, by adjusting the half-etching conditions, the first carrier layer 11 and the second carrier layer 12 can also have a predetermined thickness and a three-layer cladding sheet with a three-layer structure on both sides of the base layer 10 can be obtained. .

Compared with the first carrier layer 11 and the second carrier layer 12, the base layer 10 is more resistant to the etching solution. Therefore, when the etching solution is used to start the etching of the two-layer structure cladding sheet, the substrate layer 10 is less likely to be etched than the first carrier layer 11 (or the second carrier layer 12). The etching speed of the base material layer 10 can be made slower than the etching speed of the first carrier layer 11 (or the second carrier layer 12). Therefore, for example, when etching holes are simultaneously formed in a two-layer cladding sheet including the base layer 10 and the first carrier layer 11, the depth of the etching holes formed from the surface (Z2 side) of the base layer 10 to the Z1 side is It is shallower than the depth of the etching hole formed from the surface (Z1 side) of the first carrier layer 11 to the Z2 side. Alternatively, when etching holes are simultaneously formed in a two-layer cladding sheet including the base layer 10 and the second carrier layer 12, the depth of the etching holes formed from the surface (Z1 side) of the base layer 10 to the Z2 side is greater than The depth of the etching hole formed from the surface (Z2 side) of the second carrier layer 12 toward the Z1 side is shallower. If a metal mask sheet (cladding sheet 3S) that can obtain such a difference in the depth of the etching holes is used, a metal mask having a mask pattern in which the hole is arranged on one of the faces can be constructed The depth of is different from the depth of the hole arranged on the other side.

In addition, it is preferable to use a homogeneous etching solution to etch the cladding sheet 3S under the same environment, and set the corrosion loss of the base layer 10 to M _{b , the corrosion loss of the first carrier layer 11 to Mc1} , and the first carrier layer 11 to M c1. When the corrosion loss of the second carrier layer 12 is set to _Mc2 , the base layer 10, the first carrier layer 11, and the second carrier layer 12 satisfy the relationship of M _b /M _c1 ≦0.9 and M _b /M _c2 ≦0.9. The cladding sheet 3S that satisfies the above relationship can reliably make the etching speed of the substrate layer 10 slower than the etching speed of the first carrier layer 11 when the substrate layer 10 and the first carrier layer 11 are simultaneously etched, or can be When the base material layer 10 and the second carrier layer 12 are simultaneously etched, the etching speed of the base material layer 10 is reliably made slower than the etching speed of the second carrier layer 12. Thus, for example, when an etching hole is to be formed at the same time, the depth of the etching hole formed from the surface (Z2 side) of the base layer 10 to the Z1 side can be more reliably than that from the surface (Z1 side) of the first carrier layer 11 The depth of the etching hole formed on the Z2 side is shallower, or the depth of the etching hole formed from the surface of the base layer 10 (Z1 side) to the Z2 side can be made more than that from the surface of the second carrier layer 12 (Z2 side). The depth of the etching hole formed on the Z1 side is shallower. In addition, the simultaneously etched base layer 10 and the first carrier layer 11 satisfy the relationship of M _b /M _c1 >0 (M _b >0, _Mc1 >0), or the simultaneously etched base layer 10 and the second carrier layer The carrier layer 12 satisfies the relationship of M _b /M _c2 >0 (M _b >0, _Mc2 >0). In addition, the first carrier layer 11 and the second carrier layer 12 may satisfy _{the relationship of Mc1} /M _c2 ≦0.9, or may satisfy the relationship of _Mc2 /M _c1 ≦0.9.

The cladding sheet 3S preferably has 0.2% endurance, tensile strength, elongation, Young's modulus, hardness, linear expansion coefficient, and other mechanical strength and various characteristics suitable for metal masks. For example, from the viewpoint of facilitating handling, a cladding sheet 3S having a large tensile strength and a large Young's modulus is preferable. In this case, it is particularly preferable that the cladding sheet 3S has a tensile strength of 700 MPa or more and a Young's modulus of 100 GPa or more of the base material layer 10 that is the main body of the metal mask. In addition, for example, from the viewpoint of suppressing heating deformation (strain) during vapor deposition when using a metal mask for an organic EL element, the cladding sheet 3S with a small warpage due to heating is preferable, and the cladding sheet is preferably constituted The coefficient of linear expansion of the 3S base layer 10, the coefficient of linear expansion of the first carrier layer 11, and the coefficient of linear expansion of the second carrier layer 12 have a small difference with each other. In this case, it is preferable that the linear expansion coefficient of the base layer 10 is 5 ppm/°C or less, and the linear expansion coefficient of the first carrier layer 11 and the linear expansion coefficient of the second carrier layer 12 are relative to the linear expansion coefficient of the base layer 10, respectively. The expansion coefficient is within ±2 ppm/℃.

Examples (product examples) in which the metal mask according to the present invention can be manufactured using the cladding sheet for metal masks (first embodiment, second embodiment, and third embodiment) Be explained.

<First product example> The first product example of the metal mask according to the present invention is shown in FIG. 6. FIG. 6 is a cross-sectional view of the metal mask 1M cut in the thickness direction (Z direction). The metal mask 1M has, for example, etching holes 1f as a mask pattern. In a cross-sectional view cut in the thickness direction, the metal mask 1M has a single-layer structure. The main body of the metal mask 1M is the base portion 10M. The base material portion 10M includes, for example, the part of the base layer 10 constituting the cladding sheet 1S shown in FIG. 3, the part of the base layer 10 constituting the cladding sheet 2S shown in FIG. 4, or the portion constituting the cladding sheet 2S shown in FIG. 10 parts of the 3S base material layer. The metal mask 1M is thinned, and its thickness T _1M is 20 μm or less (preferably 15 μm or less). In the metal mask 1M thinned in this way, the mask patterns such as the etching holes 1f formed by etching have high dimensional accuracy and have a higher-definition mask pattern. The thickness T _{1M of the} metal mask 1M may be, for example, the same as the thickness of the base layer 10 constituting the cladding sheet 1S, the thickness of the base layer 10 constituting the cladding sheet 2S, or the thickness of the base layer 10 constituting the cladding sheet 3S. It is the same (T _1M = t0), but it can also be thinned to the same level or less (T _1M <t0) by half etching or the like.

<Modification of the first product example> A modification example of the first product example of the metal mask according to the present invention is shown in FIG. 7. FIG. 7 is a cross-sectional view of the metal mask 1Ma cut in the thickness direction (Z direction). The metal mask 1Ma has, for example, etching holes 1f as a mask pattern. In a cross-sectional view cut in the thickness direction, the metal mask 1Ma includes a single-layer structure portion and a two-layer structure portion. The single-layer structure part is the main body of the metal mask 1Ma, and includes the base material part 10M. The two-layer structure portion includes a base portion 10M and a frame portion 11f for reinforcing the main body of the metal mask 1Ma. The base material portion 10M includes, for example, the part of the base layer 10 constituting the cladding sheet 1S shown in FIG. 3, the part of the base layer 10 constituting the cladding sheet 2S shown in FIG. 4, or the portion constituting the cladding sheet 2S shown in FIG. 10 parts of the 3S base material layer. The frame portion 11f includes, for example, the portion of the first carrier layer 11 that constitutes the cladding sheet 1S shown in FIG. 3, the portion of the first carrier layer 11 that constitutes the cladding sheet 2S shown in FIG. 4, or the portion that constitutes the coating shown in FIG. 5. The first carrier layer 11 part of the sheet 3S. The frame portion 11f is arranged at the edge portion of the base material layer 10 in a ring shape. Compared with the metal mask 1M shown in FIG. 6, the metal mask 1Ma including the frame portion 11 has an improved mechanical strength when the thickness of the main body of the metal mask is approximately the same, and therefore becomes a metal mask that is easy to handle. The frame portion 11f is arranged in a ring shape on the edge portion of the base portion 10M, but may not be arranged in a ring shape on the edge portion of the base portion 10M, or may be arranged on the opposite surface side of the base portion 10M. In addition, the structure of the frame part 11f is not limited to the said structure. For example, the frame portion 11f can also be made of the base layer 10 portion of the cladding sheet 1S shown in FIG. 3, the base layer 10 portion of the cladding sheet 2S shown in FIG. 4, or the cladding sheet 3S shown in FIG. Any part of the base layer 10 is constituted. When the frame portion 11f is partially composed of the base layer 10, the metal mask has a single-layer structure. In addition, the frame portion 11f may be formed of either the second carrier layer 12 part of the cladding sheet 2S shown in FIG. 4 or the second carrier layer 12 part of the cladding sheet 3S shown in FIG. 5.

The metal mask 1Ma is thinned, and its thickness T _1Ma is 20 μm or less (preferably 15 μm or less). In the metal mask 1Ma thus thinned, the mask patterns such as the etching holes 1f formed by etching have high dimensional accuracy, and have higher-definition mask patterns. The thickness T _{1Ma of the} metal mask 1Ma can be, for example, the same as the thickness of the base layer 10 constituting the cladding sheet 1S, the thickness of the base layer 10 constituting the cladding sheet 2S, or the thickness of the base layer 10 constituting the cladding sheet 3S. It is the same (T _1Ma =t0), but it can also be thinned to the same level or less (T _1Ma <t0) by half etching or the like. The thickness T _{X of the} frame portion 11f may be, for example, the same as the thickness of the first carrier layer 11 constituting the cladding sheet 1S, the thickness of the first carrier layer 11 constituting the cladding sheet 2S, or the first carrier layer 11 constituting the cladding sheet 3S. The thickness is the same (T _X =t1), but it can also be thinned to the same or less (T _X <t1) by half etching or the like. In addition, the total thickness (T _1Ma +T _{X ) of the thickness T 1Ma} and the thickness T _X can also be regarded as the thickness of the metal mask 1Ma.

＜Second product example＞ The second product of the metal mask according to the present invention is illustrated in FIG. 8. FIG. 8 is a cross-sectional view of the metal mask 2M cut in the thickness direction (Z direction). The metal mask 2M has, for example, etching holes 2f as a mask pattern. In a cross-sectional view cut in the thickness direction, the metal mask 2M has a two-layer structure. The main body of the metal mask 2M includes a base portion 10M and a carrier portion 12M. The base part 10M includes, for example, the base layer 10 part constituting the cladding sheet 2S shown in FIG. 4 or the base layer 10 part constituting the cladding sheet 3S shown in FIG. 5. The carrier portion 12M includes, for example, the second carrier layer 12 part constituting the cladding sheet 2S shown in FIG. 4 or the second carrier layer 12 part constituting the cladding sheet 3S shown in FIG. 5. In addition, the structure of the carrier part 12M is not limited to the said structure. For example, the carrier portion 12M can also be made of the first carrier layer 11 part of the cladding sheet 1S shown in FIG. 3, the first carrier layer 11 part of the cladding sheet 2S shown in FIG. 4, or the cladding sheet shown in FIG. Any one of the first carrier layers 11 of 3S is constituted. When the carrier portion 12M is constituted by the first carrier layer 11 portion of the cladding sheet 1S shown in FIG. 3, the base portion 10M may be constituted by the portion of the base layer 10 of the cladding sheet 1S shown in FIG. 3.

The metal mask 2M has been thinned, and its thickness T _2M is 20 μm or less (preferably 15 μm or less). In the metal mask 2M thinned in this way, the mask patterns such as the etching holes 2f formed by etching have high dimensional accuracy, and have higher-definition mask patterns. The thickness T _{2M of the} metal mask 2M may be combined with the total thickness of the base layer 10 and the second carrier layer 12 constituting the cladding sheet 2S, or the total thickness of the base layer 10 and the second carrier layer 12 constituting the cladding sheet 3S. The thickness is the same (T _2M = t0 + t2), but can also be reduced to the same thickness or less by half etching or the like (T _2M <t0 + t2). The thickness of the carrier portion T _Y 12M may be constituted, for example, the thickness of the cladding sheet 2S second carrier layer 12, or constituting the thickness of the second cladding layer, the carrier plate 12 is equal 3S (T _Y = t2), it can also be semi- It is thinned to the same level or less by etching etc. (T _Y <t2).

<Modification of the second product example> A modification example of the second product example of the metal mask according to the present invention is shown in FIG. 9. FIG. 9 is a cross-sectional view of the metal mask 2Ma cut in the thickness direction (Z direction). The metal mask 2Ma has, for example, etching holes 2f as a mask pattern. In a cross-sectional view cut in the thickness direction, the metal mask 2Ma includes a two-layer structure portion and a three-layer structure portion. The two-layer structure part becomes the main body of the metal mask 2Ma, and includes the base part 10M and the carrier part 12M. The three-layer structure portion includes a base portion 10M and a carrier portion 12M, and a frame portion 11f for reinforcing the main body of the metal mask 2Ma. The base part 10M includes, for example, the base layer 10 part constituting the cladding sheet 2S shown in FIG. 4 or the base layer 10 part constituting the cladding sheet 3S shown in FIG. 5. The carrier portion 12M includes, for example, the second carrier layer 12 part constituting the cladding sheet 2S shown in FIG. 4 or the second carrier layer 12 part constituting the cladding sheet 3S shown in FIG. 5. The frame portion 11f includes, for example, the first carrier layer 11 part constituting the cladding sheet 2S shown in FIG. 4 or the first carrier layer 11 part constituting the cladding sheet 3S shown in FIG. 5. The frame portion 11f is arranged at the edge portion of the base material layer 10 in a ring shape. Compared with the metal mask 2M shown in FIG. 8, the metal mask 2Ma including the frame portion 11 has improved mechanical strength when the thickness of the main body of the metal mask is approximately the same, and therefore becomes a metal mask that is easy to handle. The frame portion 11f is arranged in a ring shape on the edge portion of the base portion 10M, but may not be arranged in a ring shape on the edge portion of the base portion 10M, or may be arranged on the opposite surface side of the base portion 10M. In addition, the structure of the frame part 11f is not limited to the said structure. For example, the frame portion 11f may be composed of either the base layer 10 part of the cladding sheet 2S shown in FIG. 4 or the base layer 10 part of the cladding sheet 3S shown in FIG. 5. When the frame portion 11f is partially composed of the base layer 10, the metal mask has a two-layer structure of the base layer 10 and the carrier portion 12M. In addition, the structure of the carrier part 12M is not limited to the said structure. For example, the carrier portion 12M may be formed of either the first carrier layer 11 part constituting the cladding sheet 2S shown in FIG. 4 or the first carrier layer 11 part constituting the cladding sheet 3S shown in FIG. 5.

The metal mask 2Ma has been thinned, and its thickness T _2Ma is 20 μm or less (preferably 15 μm or less). In the metal mask 2Ma thinned in this way, the mask patterns such as the etching holes 2f formed by etching have high dimensional accuracy and have a higher-definition mask pattern. The thickness T _{2Ma of the} metal mask 2Ma may be combined with the total thickness of the base layer 10 and the second carrier layer 12 constituting the cladding sheet 2S, or the total thickness of the base layer 10 and the second carrier layer 12 constituting the cladding sheet 3S. The thickness is the same (T _2Ma =t0+t2), but it can also be reduced to the same thickness or less by half etching or the like (T _2Ma <t0+t2). The thickness of the carrier portion T _Y 12M may be constituted, for example, the thickness of the cladding sheet 2S second carrier layer 12, or constituting the thickness of the second cladding layer, the carrier plate 12 is equal 3S (T _Y = t2), it can also be semi- It is thinned to the same level or less by etching etc. (T _Y <t2). The thickness T _{X of the} frame portion 11f may be the same as the thickness of the first carrier layer 11 constituting the cladding sheet 2S or the thickness of the first carrier layer 11 constituting the cladding sheet 3S (T _X =t1), or may pass half It is thinned to the same level or less by etching etc. (T _X <t1). In addition, the total thickness (T _2Ma +T _{X ) of the thickness T 2Ma} and the thickness T _X can also be regarded as the thickness of the metal mask 2Ma.

＜Example of the third product＞ The third product of the metal mask according to the present invention is illustrated in FIG. 10. FIG. 10 is a cross-sectional view of the metal mask 3M cut in the thickness direction (Z direction). The metal mask 3M has, for example, etching holes 3f as a mask pattern. In a cross-sectional view cut in the thickness direction, the metal mask 3M has a three-layer structure. The main body of the metal mask 3M includes a base portion 10M, a first carrier portion 11M, and a second carrier portion 12M. The base part 10M includes, for example, the base layer 10 part constituting the cladding sheet 2S shown in FIG. 4 or the base layer 10 part constituting the cladding sheet 3S shown in FIG. 5. The first carrier portion 11M includes, for example, the first carrier layer 11 part constituting the cladding sheet 2S shown in FIG. 4 or the first carrier layer 11 part constituting the cladding sheet 3S shown in FIG. 5. The second carrier part 12M includes, for example, the second carrier layer 12 part constituting the cladding sheet 2S shown in FIG. 4 or the second carrier layer 12 part constituting the cladding sheet 3S shown in FIG. 5. In addition, the structure of the 1st carrier part 11M and the 2nd carrier part 12M is not limited to the said structure. For example, the first carrier portion 11M may be constituted by the second carrier layer 12 portion of the cladding sheet 2S shown in FIG. 4, and the second carrier portion 12M may be constituted by the first carrier layer 11 portion of the cladding sheet 2S shown in FIG. In addition, the first carrier portion 11M may be constituted by the second carrier layer 12 portion of the cladding sheet 3S shown in FIG. 5, and the second carrier portion 12M may be constituted by the first carrier layer 11 portion of the cladding sheet 3S shown in FIG. 5.

The metal mask 3M has been thinned, and its thickness T _3M is 20 μm or less (preferably 15 μm or less). In the metal mask 3M thus thinned, the mask patterns such as the etching holes 3f formed by etching have high dimensional accuracy, and have higher-definition mask patterns. The thickness T _{3M of the} metal mask 3M may be, for example, the same as the total thickness of the base material layer 10, the first carrier layer 11, and the second carrier layer 12 constituting the cladding sheet 2S, or the base material layer 10 and the second carrier layer 12 constituting the cladding sheet 3S. The total thickness of the one carrier layer 11 and the second carrier layer 12 is the same (T _3M = t0 + t1 + t2), and may be reduced to the same thickness or less by half etching or the like (T _3M <t0 + t1 + t2). The first support portion 11M may be, for example, a thickness T _Y1 constituting the sheet thickness of the cladding layer 2S of the first carrier 11, the carrier or constituting the thickness of the first cladding layer 11 of the same plate 3S (T _Y1 = t1), may be The thickness is reduced to the same level or less by half etching or the like (T _Y1 <t1). 12M thickness of the second portion of the carrier may be constituted, for example, T _Y2 the thickness of the sheet cladding layer 2S of the second carrier 12, or constituting the thickness of the second cladding layer, the carrier plate 12 is equal 3S (T _Y2 = t2), may be The thickness is reduced to the same level or less by half etching or the like (T _Y2 <t2).

<Modification of the third product example> A modification example of the third product example of the metal mask according to the present invention is shown in FIG. 11. FIG. 11 is a cross-sectional view of the metal mask 3Ma cut in the thickness direction (Z direction). The metal mask 3Ma has, for example, etching holes 3f as a mask pattern. In a cross-sectional view cut in the thickness direction, the metal mask 3Ma has a three-layer structure. The main body of the metal mask 3Ma includes a base portion 10M, a first carrier portion 11M, and a second carrier portion 12M. The first carrier portion 11M has a frame portion 11f for reinforcing the metal mask 3Ma. The base part 10M includes, for example, the base layer 10 part constituting the cladding sheet 2S shown in FIG. 4 or the base layer 10 part constituting the cladding sheet 3S shown in FIG. 5. The first carrier portion 11M and the frame portion 11f include, for example, the first carrier layer 11 portion constituting the cladding sheet 2S shown in FIG. 4 or the first carrier layer 11 portion constituting the cladding sheet 3S shown in FIG. 5. The second carrier part 12M includes, for example, the second carrier layer 12 part constituting the cladding sheet 2S shown in FIG. 4 or the second carrier layer 12 part constituting the cladding sheet 3S shown in FIG. 5. The frame portion 11f can be formed when the first carrier portion 11M is formed. The frame portion 11f is arranged at the edge portion of the base material layer 10 in a ring shape. Compared with the metal mask 3M shown in FIG. 10, the metal mask 3Ma including such a frame portion 11 has an improved mechanical strength when the thickness of the main body of the metal mask is approximately the same, and thus becomes a metal mask that is easy to handle. The frame portion 11f is arranged in a ring shape on the edge portion of the first carrier portion 11M, but it may not be arranged in a ring shape on the edge portion of the first carrier portion 11M, and may be arranged on the second carrier portion 11M on the opposite side. Carrier part 12M. In addition, the structure of the frame part 11f is not limited to the said structure. For example, the frame portion 11f may be composed of either the second carrier layer 12 part of the cladding sheet 2S shown in FIG. 4 or the second carrier layer 12 part of the cladding sheet 3S shown in FIG. 5.

The metal mask 3Ma is thinned, and its thickness T _3Ma is 20 μm or less (preferably 15 μm or less). In the metal mask 3Ma thus thinned, the mask patterns such as the etching holes 3f formed by etching have high dimensional accuracy and have a higher-definition mask pattern. The thickness T _{3Ma of the} metal mask 3Ma can be combined with the total thickness of the base layer 10, the first carrier layer 11, and the second carrier layer 12 constituting the cladding sheet 2S, or the base layer 10 and the second carrier layer 12 constituting the cladding sheet 3S, for example. The total thickness of the one carrier layer 11 and the second carrier layer 12 is the same (T _3Ma =t0+t1+t2), and may be reduced to the same thickness or less by half etching or the like (T _3Ma <t0+t1+t2). The first support portion 11M may be, for example, a thickness T _Y1 constituting the sheet thickness of the cladding layer 2S of the first carrier 11, the carrier or constituting the thickness of the first cladding layer 11 of the same plate 3S (T _Y1 = t1), may be The thickness is reduced to the same level or less by half etching or the like (T _Y1 <t1). 12M thickness of the second portion of the carrier may be constituted, for example, T _Y2 the thickness of the sheet cladding layer 2S of the second carrier 12, or constituting the thickness of the second cladding layer, the carrier plate 12 is equal 3S (T _Y2 = t2), may be The thickness is reduced to the same level or less by half etching or the like (T _Y2 <t2). The thickness T _{X of the} frame portion 11f may be, for example, the same as the thickness obtained by subtracting the thickness of the first carrier portion 11M from the thickness of the first carrier layer 11 constituting the cladding sheet 2S, or the thickness of the first carrier layer 11 constituting the cladding sheet 3S. The thickness obtained by subtracting the thickness of the first carrier portion 11M from the thickness of the first carrier portion 11M is the same (T _X =t1- _TY1 ), and it can also be thinned to the same or less by half etching or the like (T _X <t1- _TY1 ). In addition, the total thickness (T _3Ma +T _{X ) of the thickness T 3Ma} and the thickness T _X can also be regarded as the thickness of the metal mask 3Ma.

Hereinafter, based on FIGS. 12 to 20, the cladding sheet for metal masks of the present invention (the first embodiment, the second embodiment, and the third embodiment) are used to manufacture the metal mask of the present invention. The method (product example) will be explained. In addition, an example of a method of manufacturing a metal mask using the cladding sheet 1S (first embodiment) shown in FIG. 3 will be described based on FIGS. 12 to 16, and based on FIGS. 17 to 20, the method shown in FIG. 4 will be used. An example of a method of manufacturing a metal mask of the cladding sheet 2S (second embodiment) and the cladding sheet 3S (third embodiment) shown in FIG. 5 will be described.

<Example of the first product> <Example of the second product> According to the method of manufacturing the metal mask shown in FIGS. 12 and 13, the metal mask 1M (first product example) shown in FIG. 6 and the metal mask 2M (second product example) shown in FIG. 8 can be manufactured.

In Figure 12, step (a) is the raw material preparation step. In this raw material preparation step, for example, the cladding sheet 1S shown in FIG. 3 is prepared. The cladding sheet 1S (thickness T _1S ) includes a base layer 10 (thickness t0) and a first carrier layer 11 (thickness t1). The thickness of the base layer 10 is 1 μm or more and 20 μm or less (preferably 5 μm or more and 15 μm or less). The base layer 10 and the first carrier layer 11 are crimped. The base material layer 10 includes, for example, an iron-based alloy A containing approximately 32% by mass of Ni and approximately 5.5% by mass of Co. The first carrier layer 11 contains, for example, an iron-based alloy B containing approximately 36% by mass of Ni. The base material layer 10 containing the iron-based alloy A and the first carrier layer 11 containing the iron-based alloy B can be etched by a homogeneous etching solution (for example, iron chloride solution with a concentration of 40% by mass, etc.). In addition, the base layer 10 containing the iron-based alloy A is more resistant to the etching solution than the first carrier layer 11 containing the iron-based alloy B.

In Figure 12, step (b) is the covering step. In this coating step, in order to form a predetermined etching pattern, a protective film 13 is formed on the surface 10 a of the base layer 10 and a protective film 14 is formed on the surface 11 a of the first carrier layer 11.

In Fig. 12, step (c) is an etching step. In this etching step, an etching solution suitable for both the iron-based alloy A constituting the base layer 10 and the iron-based alloy B constituting the first carrier layer 11 is used to etch the cladding sheet 1S. As the etching solution, for example, a ferric chloride solution (aqueous solution) having a concentration of 40% by mass is used. By the etching, the surface 10a of the base layer 10 without the protective film 13 and the surface 11a of the first carrier layer 11 without the protective film 14 are simultaneously etched, and for example, an etching hole 10b and an etching hole 11b are formed substantially at the same time. At this time, the base layer 10 containing the iron-based alloy A is more resistant to the etching solution than the first carrier layer 11 containing the iron-based alloy B, so that the etching speed on the side of the first carrier layer 11 becomes greater than that of the first carrier layer 11 containing the iron-based alloy B. The etching rate of the substrate layer 10 side. Therefore, the corrosion loss on the first carrier layer 11 side is larger than that on the base layer 10 side, and the size of the etching hole 11b on the first carrier layer 11 side (depth from the surface, opening diameter to the surface, hole The internal volume, etc.) is larger than the etching hole 10b on the base layer 10 side. In addition, the size and the like of the etching hole 10b and the etching hole 11b can be adjusted as long as the thickness and material of the base layer 10 and the first carrier layer 11 are appropriately selected.

In Figure 12, step (d) is a finishing step. In this finishing step, the protective film 13 and the protective film 14 are removed from the cladding sheet 1S, and the entire surface is cleaned. In this way, a metal mask can be manufactured. This metal mask includes a base portion 10M containing an iron-based alloy A, and a carrier portion 11M containing an iron-based alloy B. This metal mask is, for example, the metal mask 2M as shown in FIG. 8, and is, for example, a metal mask _{2M of} a two-layer structure having a thickness T 2M of the mask pattern 2 f (second product example).

Next, the manufacturing method of the metal mask using the manufacturing process shown in FIG. 13 is demonstrated. The manufacturing process shown in FIG. 13 is a process following steps (a) to (c) shown in FIG. 12. Following the steps (a) to (c) shown in FIG. 12, the steps (c1) and (d1) shown in FIG. 13 are passed through, thereby making it possible to manufacture, for example, a metal mask 1M as shown in FIG. A product example).

In FIG. 13, step (c1) is a half-etching step. In this half-etching step, after removing the protective film 13 from the cladding sheet 1S, half-etching is performed. The half-etching is carried out substantially uniformly from the surface 10 a side (Z2 side) of the base layer 10 to the first carrier layer 11 side (Z1 side) using an etching solution suitable for the iron-based alloy A constituting the base layer 10. As the etching solution, for example, a ferric chloride solution (aqueous solution) having a concentration of 40% by mass is used. Almost all of the base material layer 10 is removed by the half-etching. In addition, by adjusting the half-etching conditions, the first carrier layer 11 from which the base layer 10 has been removed may be half-etched toward the Z1 side. Thus, the thickness of the metal mask can be reduced.

In Figure 13, step (d1) is a finishing step. In this finishing step, the protective film 14 can be removed from the cladding sheet 1S, and the entire surface of the cladding sheet 1S can be cleaned to produce a metal mask. The metal mask includes a carrier part 11M including an iron-based alloy B. The metal mask is, for example, a metal mask 1M as shown in FIG. 6, and is, for example, a metal mask _{1M of} a single-layer structure having a thickness T 1M of the mask pattern 1f (first product example).

<The first modification of the first product example> According to the manufacturing method of the metal mask shown in FIGS. 12 and 14, or FIGS. 12 and 15, it is possible to manufacture a metal mask having a configuration similar to that of the metal mask shown in FIG. 7 (a modification of the first product example). 14 or the metal mask 1Ma shown in FIG. 15 (the first modification of the first product example).

The metal mask 1Ma shown in FIG. 14 or FIG. 15 (the first modification of the first product example) can be shown in FIG. 13 or FIG. 14 after steps (a) to (c) shown in FIG. 12 Manufacturing process. In addition, in the raw material preparation step corresponding to the step (a) shown in FIG. 12, for example, the cladding sheet 1S shown in FIG. 3 is prepared. This cladding sheet 1S may be the same as the case of the metal mask 1M. The coating step corresponding to step (b) shown in FIG. 12 and the etching step corresponding to step (c) can also be performed in the same manner as in the case of the metal mask 1M.

The manufacturing method of the metal mask using the manufacturing process shown in FIG. 14 is demonstrated. The manufacturing process shown in FIG. 14 is a process following steps (a) to (c) shown in FIG. 12. In Figure 14, step (e) is the covering step. In this coating step, in order to form a frame portion 11f of a predetermined shape on the Z1 side (refer to step (h)), a protective film 15 is formed on the surface 11a of the first carrier layer 11, and a protective film is formed in the etching hole 11b (refer to FIG. 12). The film 16 forms a protective film 17 on the surface 10a of the base layer 10 and the etching hole 10b.

In Fig. 14, step (f) is an etching step. In this etching step, the first carrier layer 11 is etched using an etching solution suitable for the iron-based alloy B constituting the first carrier layer 11. As the etching solution, for example, a ferric chloride solution (aqueous solution) having a concentration of 40% by mass is used. By the etching, the surface 11a of the first carrier layer 11 that does not have the protective film 15 and the protective film 16 is etched to form, for example, an etching hole 11c. The adjustment of the depth (etching amount) of the etching hole 11 can be achieved by adjusting etching conditions or the like.

In FIG. 14, step (g) is a half-etching step. In this half-etching step, first, the protective film 17 is removed from the base layer 10. Next, the protective film 18 is formed on the surface 11 a of the first carrier layer 11 including the etching hole 11 b and the etching hole 11 c, and the protective film 19 is formed on the etching hole 10 b (see FIG. 12 ). Then half etching is performed. The half etching is performed substantially uniformly from the surface 10 a side (Z2 side) of the base material layer 10 to the first carrier layer 11 side (Z1 side). Almost all of the base material layer 10 is removed by the half-etching. In addition, by adjusting the half-etching conditions, the first carrier layer 11 from which the base layer 10 has been removed may be half-etched toward the Z1 side. Thus, the thickness of the metal mask can be reduced.

In Figure 14, step (h) is a finishing step. In this finishing step, the protective film 18 and the protective film 19 are removed from the cladding sheet 1S, and the entire surface is cleaned. In this way, a metal mask can be manufactured. The metal mask includes a carrier portion 11M containing an iron-based alloy B, and a frame portion 11f is arranged in a ring shape at an edge portion on the Z1 side of the carrier portion 11M. The frame portion 11f includes a portion of the first carrier layer 11. The metal mask has, for example, a configuration similar to the metal mask shown in FIG. 7, and is, for example, _{a metal mask 1Ma having} a single-layer structure with a thickness T 1Ma of the mask pattern 1fa (first modification of the first product example) example).

Next, the manufacturing method of the metal mask using the manufacturing process shown in FIG. 15 is demonstrated. The manufacturing process shown in FIG. 15 is a process following steps (a) to (c) shown in FIG. 12. In Figure 15, step (e1) is the covering step. In this coating step, in order to form a frame portion 11f of a predetermined shape on the Z1 side (refer to step (h1)), a protective film 15 is formed on the surface 11a of the first carrier layer 11, and a protective film is formed in the etching hole 11b (refer to FIG. 12). In the film 16, a protective film 19 is formed in the etching hole 10b (see FIG. 12). In addition, no protective film is formed on the surface 10 a of the base layer 10.

In FIG. 15, step (f1) is an etching and half-etching step. In this etching and half-etching step, using an etching solution suitable for both the iron-based alloy A constituting the base layer 10 and the iron-based alloy B constituting the first carrier layer 11, the first carrier layer 11 side (Z1 side) And the substrate layer 10 side (Z2 side) are simultaneously etched. As the etching solution, for example, a ferric chloride solution (aqueous solution) having a concentration of 40% by mass is used. By the etching, the surface 11a of the first carrier layer 11 that does not have the protective film 15 and the protective film 16 is etched to form, for example, an etching hole 11c. The adjustment of the depth (etching amount) of the etching hole 11c can be achieved by adjusting etching conditions or the like. In addition, at the same time, the surface 10 a of the base layer 10 that does not have the protective film 19 is half-etched substantially uniformly toward the first carrier layer 11 side (Z1 side), and the base layer 10 is almost completely removed. In addition, by adjusting the half-etching conditions, the first carrier layer 11 from which the base layer 10 has been removed may be half-etched toward the Z1 side. Thus, the thickness of the metal mask can be reduced.

In Figure 15, step (h1) is a finishing step. In this finishing step, the protective film 15, the protective film 16, and the protective film 19 are removed from the cladding sheet 1S, and the entire surface is cleaned. In this way, a metal mask can be manufactured. The metal mask includes a carrier portion 11M containing an iron-based alloy B, and a frame portion 11f is arranged in a ring shape at an edge portion on the Z1 side of the carrier portion 11M. The frame portion 11f includes a portion of the first carrier layer 11. The metal mask has, for example, a configuration similar to the metal mask shown in FIG. 7, and is, for example, _{a metal mask 1Ma having} a single-layer structure with a thickness T 1Ma of the mask pattern 1fa (first modification of the first product example) example).

<The second modification of the first product example> According to the manufacturing method of the metal mask shown in FIGS. 12 and 16, it is possible to manufacture a metal mask (a modification of the first product example) shown in FIG. 7 with a similar configuration and with a frame portion 10f arranged on the Z2 side . The metal mask 1Mb shown in FIG. 16 (the second modification of the first product example).

The metal mask 1Mb shown in FIG. 16 (the second modification of the first product example) can be manufactured by the manufacturing process shown in FIG. 16 following the steps (a) to (c) shown in FIG. 12. In addition, in the raw material preparation step corresponding to the step (a) shown in FIG. 12, for example, the cladding sheet 1S shown in FIG. 3 is prepared. This cladding sheet 1S may be the same as the case of the metal mask 1M. The coating step corresponding to step (b) shown in FIG. 12 and the etching step corresponding to step (c) can be performed in the same manner as in the case of the metal mask 1M.

The manufacturing process shown in FIG. 16 is a process following steps (a) to (c) shown in FIG. 12. In Figure 16, step (e2) is the covering step. In this coating step, in order to form a frame portion 10f of a predetermined shape on the Z2 side (refer to step (h2)), a protective film 17 is formed on the surface 10a of the base layer 10, and a protective film 19 is formed in the etching hole 10b. The surface 11 a of the carrier layer 11 and the etching hole 11 b (refer to FIG. 12) form a protective film 20.

In FIG. 16, step (f2) is an etching step. In this etching step, the base layer 10 is etched using an etching solution suitable for the iron-based alloy A constituting the base layer 10. As the etching solution, for example, a ferric chloride solution (aqueous solution) having a concentration of 40% by mass is used. By the etching, the surface 10a of the base layer 10 that does not have the protective film 17 and the protective film 19 is etched, and the base layer 10 is almost completely removed to form, for example, an etching hole 10c. The adjustment of the depth (etching amount) of the etching hole 10c can be achieved by adjusting etching conditions or the like. In addition, by adjusting the etching conditions, the first carrier layer 11 after removing the base layer 10 may be etched toward the Z1 side. Thus, the thickness of the metal mask can be reduced.

In Figure 16, step (h2) is a finishing step. In this finishing step, the protective film 17, the protective film 19, and the protective film 20 are removed, and the entire surface is cleaned. In this way, a metal mask can be manufactured. The metal mask includes a carrier portion 11M containing an iron-based alloy B, and a frame portion 10f is arranged in a ring shape at an edge portion on the Z2 side of the carrier portion 11M. This frame portion 10f includes the base layer 10 portion. The metal mask has, for example, a configuration similar to the metal mask shown in FIG. 7, and a frame portion 10f is arranged on the Z2 side. The metal mask is, for example, _{a metal mask 1Mb having a thickness T 1Mb} of the mask pattern 1f (a second modification of the first product example). The main body of the metal mask 1Mb has a single-layer structure.

＜Example of the third product＞ According to the manufacturing method of the metal mask shown in FIG. 17, the metal mask 3M (third product example) shown in FIG. 10 can be manufactured.

In Figure 17, step (i) is the raw material preparation step. In this raw material preparation step, for example, the covering sheet 2S shown in FIG. 4 or the covering sheet 3S shown in FIG. 5 is prepared. In FIG. 16, the cladding sheet 2S shown in FIG. 4 is representatively exemplified. The cladding sheet 2S (thickness T _2S ) includes a base layer 10 (thickness t0), a first carrier layer 11 (thickness t1), and a second carrier layer 12 (thickness t2). The thickness of the base layer 10 is 1 μm or more and 20 μm or less (preferably 5 μm or more and 15 μm or less). The base layer 10 and the first carrier layer 11 are crimped. The substrate layer 10 and the second carrier layer 12 are crimped. The base material layer 10 includes, for example, an iron-based alloy A containing approximately 32% by mass of Ni and approximately 5.5% by mass of Co. The first carrier layer 11 contains, for example, an iron-based alloy B containing approximately 36% by mass of Ni. The second carrier layer 12 includes the iron-based alloy C, which can be etched by an etching solution of the same quality as that of the iron-based alloy B, and is more resistant to the etching solution than the iron-based alloy B. The base material layer 10 containing the iron-based alloy A, the first carrier layer 11 containing the iron-based alloy B, and the second carrier layer 12 containing the iron-based alloy C can all be made of a homogeneous etching solution (for example, a chlorination solution with a concentration of 40% by mass). Liquid iron, etc.) for etching. In addition, the substrate layer 10 containing the iron-based alloy A is more resistant to the etching solution than the first carrier layer 11 containing the iron-based alloy B, and compared to the second carrier containing the iron-based alloy C The layer 12 is more resistant to the etching solution.

In Figure 17, step (j) is the covering step. In this coating step, in order to form a predetermined etching pattern, a protective film 13 is formed on the surface 11 a of the first carrier layer 11 and a protective film 14 is formed on the surface 12 a of the second carrier layer 12.

In FIG. 17, step (k) is an etching step. In this etching step, an etching solution suitable for both the iron-based alloy B constituting the first carrier layer 11 and the iron-based alloy C constituting the second carrier layer 12 is used to etch the cladding sheet 2S. As the etching solution, for example, a ferric chloride solution (aqueous solution) having a concentration of 40% by mass is used. By the etching, the surface 11a of the first carrier layer 11 without the protective film 13 and the surface 12a of the second carrier layer 12 without the protective film 14 are simultaneously etched, and for example, an etching hole 11b and an etching hole 12b are formed substantially simultaneously . At this time, the second carrier layer 12 containing the iron-based alloy C is more resistant to the etching solution than the first carrier layer 11 containing the iron-based alloy B, so that the etching rate on the side of the first carrier layer 11 becomes The etching speed on the side of the second carrier layer 12 is greater than that. Therefore, the corrosion loss on the side of the first carrier layer 11 becomes larger than that on the side of the base layer 10, and the formation of the etching hole from the Z1 side to the Z2 side proceeds more quickly. As a result, the substrate layer 10 is etched from the Z1 side. Therefore, the size of the etching hole 11b on the first carrier layer 11 side (Z1 side) (the depth from the surface, the opening diameter to the surface, the size of the hole in the hole) can be adjusted. The volume, etc.) is larger than the etching hole 12b on the second carrier layer 12 side (Z2 side). In addition, as for the adjustment of the sizes of the etching holes 11b and the etching holes 12b, the thickness and material of the first carrier layer 11 and the second carrier layer 12 can be selected appropriately.

In Figure 17, step (m) is a finishing step. In this finishing step, the protective film 13 and the protective film 14 are removed from the cladding sheet 2S, and the entire surface is cleaned. In this way, a metal mask can be manufactured. The metal mask includes a base portion 10M containing an iron-based alloy A, a first carrier portion 11M containing an iron-based alloy B, and a second carrier portion 12M containing an iron-based alloy C. The metal mask is, for example, a metal mask 3M as shown in FIG. 10, for example, a metal mask _{3M of} a three-layer structure having a thickness T 3M of a mask pattern 3 f (third product example).

<Modification of the third product example> According to the manufacturing process shown in FIGS. 17 and 18, the metal mask 3Ma shown in FIG. 11 (a modification of the third product example) can be manufactured.

The metal mask 3Ma shown in FIG. 11 (a modification of the third product example) can be manufactured through the manufacturing process shown in FIG. 18 after the steps (i) to (k) shown in FIG. 17. In addition, in the raw material preparation step corresponding to the step (i) shown in FIG. 17, for example, the cladding sheet 3S shown in FIG. 5 is prepared. The cladding sheet 3S (thickness T _3S ) includes a base layer 10 (thickness t0), a first carrier layer 11 (thickness t1), and a second carrier layer 12 (thickness t2, t1>t2). The thickness of the base layer 10 is 1 μm or more and 20 μm or less (preferably 5 μm or more and 15 μm or less). Regarding the thickness t1 of the first carrier layer 11, the frame portion 11f is partially provided in order to use the first carrier layer 11 (refer to FIG. 18), and is thicker than the thickness t2 of the second carrier layer 12 (refer to FIG. 5, t1>t2). The base layer 10 and the first carrier layer 11 are crimped. The substrate layer 10 and the second carrier layer 12 are crimped. The base material layer 10 includes, for example, an iron-based alloy A containing approximately 32% by mass of Ni and approximately 5.5% by mass of Co. The first carrier layer 11 contains, for example, an iron-based alloy B containing approximately 36% by mass of Ni. The second carrier layer 12 includes the iron-based alloy C, which can be etched by an etching solution of the same quality as that of the iron-based alloy B, and is more resistant to the etching solution than the iron-based alloy B. The base material layer 10 containing the iron-based alloy A, the first carrier layer 11 containing the iron-based alloy B, and the second carrier layer 12 containing the iron-based alloy C can all be made of a homogeneous etching solution (for example, a chlorination solution with a concentration of 40% by mass). Liquid iron, etc.) for etching. In addition, the substrate layer 10 containing the iron-based alloy A is more resistant to the etching solution than the first carrier layer 11 containing the iron-based alloy B, and compared to the second carrier containing the iron-based alloy C The layer 12 is more resistant to the etching solution. The coating step corresponding to step (j) shown in FIG. 17 and the etching step corresponding to step (k) can be performed in the same manner as in the case of the metal mask 3M.

The manufacturing process shown in FIG. 18 is a process following step (i) to step (k) shown in FIG. 17. In Figure 18, step (n) is the covering step. In this coating step, in order to form a frame portion 11f of a predetermined shape on the Z1 side (refer to step (q)), a protective film 15 is formed on the surface 11a of the first carrier layer 11, and a protective film is formed in the etching hole 11b (refer to FIG. 17). The film 16 forms a protective film 17 on the surface 12a of the second carrier layer 12 and the etching hole 12b (see FIG. 17).

In FIG. 18, step (p) is an etching step. In this etching step, the first carrier layer 11 is etched using an etching solution suitable for the iron-based alloy B constituting the first carrier layer 11. As the etching solution, for example, a ferric chloride solution (aqueous solution) having a concentration of 40% by mass is used. The surface 11a of the first carrier layer 11 that does not have the protective film 15 is etched by the etching to form, for example, an etching hole 11c. In addition, the depth of the etching hole 11c can be adjusted by adjusting conditions such as the etching time.

In Figure 18, step (q) is a finishing step. In this finishing step, the protective film 15, the protective film 16, and the protective film 17 are removed from the covering sheet 3S, and the entire surface is cleaned. In this way, a metal mask can be manufactured. The metal mask includes a base portion 10M containing an iron-based alloy A, a first carrier portion 11M containing an iron-based alloy B, and a second carrier portion 12M containing an iron-based alloy C, on the Z1 side of the first carrier portion 11M The frame portion 11f is arranged in a ring shape on the edge portion of. This frame portion 11f includes a portion of the first carrier layer 11. The metal mask is, for example, a metal mask 3Ma as shown in FIG. 11, and is, for example, a metal mask 3Ma (third product example) of a three-layer structure _{having a thickness T 3Ma of a mask pattern 3f.}

<Modification of the second product example> According to the manufacturing process shown in FIGS. 17 and 19, the metal mask 2Ma shown in FIG. 9 (a modification of the second product example) can be manufactured.

The metal mask 2Ma (a modification of the second product example) shown in FIG. 9 can be manufactured through the manufacturing process shown in FIG. 19 after the steps (i) to (k) shown in FIG. 17. In addition, in the raw material preparation step corresponding to the step (i) shown in FIG. 17, for example, the cladding sheet 2S shown in FIG. 4 or the cladding sheet 3S shown in FIG. 5 is prepared. In Fig. 19, the cladding sheet 2S shown in Fig. 4 is representatively cited. The cladding sheet 2S may be the same as that of the metal mask 3M. Regarding the thickness t1 of the first carrier layer 11, the frame portion 11f is provided in order to etch the first carrier layer 11 part (refer to FIG. 19), which may be approximately the same as the thickness t2 of the second carrier layer 12 (refer to FIG. 4, t1= t2). The coating step corresponding to step (j) shown in FIG. 17 and the etching step corresponding to step (k) can be performed in the same manner as in the case of the metal mask 3M.

The manufacturing process shown in FIG. 19 is a process following steps (i) to (k) shown in FIG. 17. In Figure 19, step (n1) is the covering step. In this coating step, in order to form a frame portion 11f of a predetermined shape on the Z1 side (refer to step (q1)), a protective film 15 is formed on the surface 11a of the first carrier layer 11, and a protective film is formed in the etching hole 11b (refer to FIG. 17). The film 16 forms a protective film 17 on the surface 12a of the second carrier layer 12 and the etching hole 12b (see FIG. 17).

In Fig. 19, step (p1) is an etching step. In this etching step, the first carrier layer 11 is etched using an etching solution suitable for the iron-based alloy B constituting the first carrier layer 11. As the etching solution, for example, a ferric chloride solution (aqueous solution) having a concentration of 40% by mass is used. By the etching, the surface 11a of the first carrier layer 11 that does not have the protective film 15 is etched, and the first carrier layer 11 is almost completely removed to form, for example, an etching hole 11c. In addition, the depth of the etching hole 11c can be adjusted by adjusting conditions such as the etching time. In addition, by adjusting the etching conditions, the base layer 10 after removing the first carrier layer 11 may be etched toward the Z2 side. Thus, the thickness of the metal mask can be reduced.

In Figure 19, step (q1) is a finishing step. In this finishing step, the protective film 15, the protective film 16, and the protective film 17 are removed from the cladding sheet 2S, and the entire surface is cleaned. In this way, a metal mask can be manufactured. The main body of the metal mask includes a base portion 10M containing an iron-based alloy A and a second carrier portion 12M containing an iron-based alloy C. In the metal mask, a frame portion 11f is arranged in a ring shape at an edge portion on the Z1 side of the first carrier portion 11M containing the iron-based alloy B. This frame portion 11f includes a portion of the first carrier layer 11. The metal mask is, for example, a metal mask 2Ma as shown in FIG. 9, and is, for example, a metal mask 2Ma having a thickness T _2Ma of the mask pattern 2f (a modification of the second product example). The main body of the metal mask 2Ma has a two-layer structure.

<The third modification of the first product example> According to the manufacturing process shown in FIGS. 17 and 20, the metal mask 1Ma shown in FIG. 7 (a modification of the first product example) can be manufactured. In addition, for convenience, the metal mask 1Ma shown in FIG. 20 obtained by the manufacturing process is referred to as a third modification of the first product example.

The metal mask 1Ma shown in FIG. 7 (the third modification of the first product example) can be manufactured through the manufacturing process shown in FIG. 20 after the steps (i) to (k) shown in FIG. 17. In addition, in the raw material preparation step corresponding to step (i) shown in FIG. 17, for example, a cladding sheet similar to the cladding sheet 2S shown in FIG. 4 or the cladding sheet 3S shown in FIG. 5 is prepared. The cladding sheet 3S may be the same as the case of the metal mask 3Ma (refer to FIG. 18), or may not be the same as the case of the metal mask 3Ma (refer to FIG. 18). Regarding the cladding sheet 3S, for example, the thickness t2 of the second carrier layer 12 may be thicker than the thickness t1 of the first carrier layer 11 (t1<t2). In FIG. 20, a cladding sheet having a three-layer structure similar to the cladding sheet 3S shown in FIG. 5 (hereinafter referred to as the cladding sheet 3S) is representatively exemplified. The base material layer 10 contains the iron-based alloy A, for example. The first carrier layer 11 includes, for example, the iron-based alloy C that is easier to be etched by a homogeneous etching solution than the iron-based alloy A. The second carrier layer 12 includes, for example, the iron-based alloy B that is easier to be etched by a homogeneous etching solution than the iron-based alloy C. Therefore, the substrate layer 10 and the first carrier layer 11 and the second carrier layer 12 can be etched at the same time. In addition, the substrate layer 10 is more resistant to the etching solution than the first carrier layer 11 and the second carrier layer 12, and the first carrier layer 11 is more resistant to the etching solution than the second carrier layer 12 The liquid is more resistant to corrosion. The coating step corresponding to the step (j) shown in FIG. 17 can be performed in the same manner as in the case of the metal mask 3M. In addition, in the etching step corresponding to step (k), the first carrier layer 11 is more resistant to corrosion than the second carrier layer 12, so the etching speed of the second carrier layer 12 becomes greater than that of the first carrier layer 11. The etching speed. Therefore, it is only necessary to consider that the etching amount (depth) from the second carrier layer 12 side (Z2 side) to the Z1 side is greater than the etching amount (depth) from the first carrier layer 11 side (Z1 side) to the Z2 side. .

The manufacturing process shown in FIG. 20 is a process following steps (i) to (k) shown in FIG. 17. In Figure 20, step (n2) is the covering step. In this coating step, in order to form a frame portion 11f of a predetermined shape on the Z1 side (refer to step (q2)), a protective film 15 is formed on the surface 11a of the first carrier layer 11, and a protective film is formed in the etching hole 11b (refer to FIG. 17). In the film 16, a protective film 19 is formed in the etching hole 12b (see FIG. 17). In addition, no protective film is formed on the surface 11 a of the second carrier layer 11.

In FIG. 20, step (p2) is an etching and half-etching step. In this etching and half-etching step, using an etching solution suitable for the iron-based alloy C constituting the first carrier layer 11 and the iron-based alloy B constituting the second carrier layer 12, the first carrier layer 11 and the second carrier layer 12 Simultaneous etching. As the etching solution, for example, a ferric chloride solution (aqueous solution) having a concentration of 40% by mass is used. By the etching, the surface 11a of the first carrier layer 11 that does not have the protective film 15 is etched, and the first carrier layer 11 is almost completely removed to form, for example, an etching hole 11c. In addition, at the same time, the surface 12 a of the second carrier layer 12 that does not have the protective film 19 is half-etched substantially uniformly toward the base layer 10 side (Z1 side), and the second carrier layer 11 is substantially removed. In this case, the etching rate of the second carrier layer 12 becomes larger than the etching rate of the first carrier layer 11 which is more resistant to corrosion than the second carrier layer 12. Therefore, the etching amount (depth) from the second carrier layer 12 side (Z2 side) to the Z1 side becomes larger than the etching amount (depth) from the first carrier layer 11 side (Z1 side) to the Z2 side. Therefore, considering the difference in thickness and corrosion resistance between the first carrier layer 11 and the second carrier layer 12, adjustment can be performed to substantially remove the second carrier layer 12 at substantially the same time as the formation of the etching hole 11c. In addition, by adjusting the etching conditions, the depth of the etching hole 11c can be adjusted. In addition, by adjusting the etching conditions, the base layer 10 after removing the second carrier layer 12 may be half-etched toward the Z1 side. Thus, the thickness of the metal mask can be reduced.

In Figure 20, step (q2) is a finishing step. In this finishing step, the protective film 15, the protective film 16, and the protective film 19 are removed from the cladding sheet 2S, and the entire surface is cleaned. In this way, a metal mask can be manufactured. The main body of the metal mask includes a base portion 10M containing an iron-based alloy A. In the metal mask, a frame portion 11f is arranged in a ring shape at an edge portion on the Z1 side of the base portion 10M. This frame portion 11f includes a portion of the first carrier layer 11. The metal mask is, for example, a metal mask 1Ma as shown in FIG. 7, and is, for example, a metal mask 1Ma having a thickness T _1Ma of the mask pattern 1f (a third modification of the first product example). The main body of the metal mask 1Ma has a single-layer structure. The cladding material for metal masks such as the cladding material 3S is sufficiently easy to handle, and there is a high possibility that the metal mask can be sufficiently thinned. In addition, according to the manufacturing method of the metal mask shown in FIG. 17 and FIG. 20 using the cladding sheet 3S, the operation is sufficiently easy, a sufficiently thinned metal mask can be manufactured, and sufficient productivity improvement can be expected. .

1f, 1fa, 2f, 3f, 100f, 200f: mask pattern (etched hole) 1M: metal mask (the first product example) 1Ma: metal mask (a modification of the first product example) 1Mb: metal mask ( The second modification of the first product example) 1S: Cladding sheet material (first embodiment, metal masking sheet material) 2M: Metal mask (second product example) 2Ma: Metal mask (second product example) Modifications of 2S: Cladding sheet (second embodiment) 3M: Metal mask (third product example) 3Ma: Metal mask (modification of third product example) 3S: Cladding sheet (third embodiment) ) 10: Base material layer 10a, 11a, 12a, 201a, 202a: Surface 10b, 10c, 11b, 11c, 12b, 100d, 100e, 201b, 202b: Etched holes 10f, 11f: Frame part 10M: Base part 11: First carrier layer 11M: carrier part (first carrier part) 12: second carrier layer 12M: carrier part (second carrier part) 13-20, 101-104, 203, 204: protective film 100, 200: metal mask Mold 100a: sheet metal 100b: first surface 100c: second surface 200a: cladding sheet 201: first layer 202: second layer T _1M , T _1Ma , T _1Mb , T _1S , T _2M , T _2Ma , T _2S , T _3M , T _3Ma , T _3S , T ₁₀₀ , T ₂₀₀ , T _X , T _Y , T _Y1 , T _Y2 , t0, t1, t2: thickness Z: direction Z1, Z2: side

FIG. 1 is a diagram for explaining a method of manufacturing a metal mask using a metal sheet material of a single-layer structure containing a single type of metal as a prior art. Fig. 2 is a view showing a conventional technique for explaining a method of manufacturing a metal mask using a two-layer structure cladding sheet formed by joining two kinds of metals. Fig. 3 is a diagram showing an example of a cladding sheet for a metal mask having a two-layer structure as an embodiment of the present invention. Fig. 4 is a diagram showing an example of a cladding sheet for a metal mask having a three-layer structure as an embodiment of the present invention. Fig. 5 is a diagram showing another example of a cladding sheet for a metal mask having a three-layer structure as an embodiment of the present invention. FIG. 6 is a diagram showing an example of a metal mask of a single-layer structure as an embodiment of the present invention. FIG. 7 is a diagram showing another example of a metal mask of a single-layer structure as an embodiment of the present invention. FIG. 8 is a diagram showing an example of a metal mask of a two-layer structure as an embodiment of the present invention. FIG. 9 is a diagram showing another example of a metal mask of a two-layer structure as an embodiment of the present invention. FIG. 10 is a diagram showing an example of a metal mask of a three-layer structure as an embodiment of the present invention. FIG. 11 is a diagram showing another example of a metal mask of a three-layer structure as an embodiment of the present invention. 12 is a diagram for explaining a method of manufacturing a metal mask using a cladding sheet material for a metal mask having a two-layer structure. FIG. 13 is a diagram for explaining a method of manufacturing a metal mask using a cladding sheet material for a metal mask having a two-layer structure. 14 is a diagram for explaining a method of manufacturing a metal mask using a cladding sheet material for a metal mask having a two-layer structure. 15 is a diagram for explaining a method of manufacturing a metal mask using a cladding sheet material for a metal mask having a two-layer structure. FIG. 16 is a diagram for explaining a method of manufacturing a metal mask using a cladding sheet material for a metal mask having a two-layer structure. FIG. 17 is a diagram for explaining a method of manufacturing a metal mask using a cladding sheet material for a metal mask having a three-layer structure. 18 is a diagram for explaining a method of manufacturing a metal mask using a cladding sheet material for a metal mask having a three-layer structure. 19 is a diagram for explaining a method of manufacturing a metal mask using a cladding sheet material for a metal mask having a three-layer structure. FIG. 20 is a diagram for explaining a method of manufacturing a metal mask using a cladding sheet material for a metal mask having a three-layer structure.

1S: Coating sheet (first embodiment, coating sheet for metal mask)

10: Substrate layer

11: The first carrier layer

T _1S , t0, t1: thickness

Z: direction

Z1, Z2: side

Claims (7)

A cladding sheet for a metal mask, in a cross-sectional view cut in the thickness direction, includes: a base material layer including an iron base containing at least one of nickel and cobalt in a range of 30% by mass to 50% by mass Alloy; and a first carrier layer, crimped on one side of the substrate layer, The substrate layer and the first carrier layer can be etched by a homogeneous etching solution, and the substrate layer is more resistant to the etching solution than the first carrier layer. The cladding sheet for metal masks as described in the first item of the scope of patent application, wherein the etching is performed in the same environment using a homogeneous etching solution, the corrosion loss of the substrate layer is set to M _b , and the first When the corrosion loss of one carrier layer is set to _Mc1 , the substrate layer and the first carrier layer satisfy the relationship of M _b /M _c1 ≦0.9. A cladding sheet for a metal mask, in a cross-sectional view cut in the thickness direction, includes: a base material layer including an iron base containing at least one of nickel and cobalt in a range of 30% by mass to 50% by mass Alloy; a first carrier layer crimped on one side of the substrate layer; and a second carrier layer crimped on the other side of the substrate layer, The substrate layer, the first carrier layer, and the second carrier layer can be etched by a homogeneous etching solution, and the substrate layer is compared with the first carrier layer and the second carrier layer The etching liquid is more resistant to corrosion. The cladding sheet for a metal mask as described in the third item of the scope of patent application, wherein the etching is performed under the same environment with a homogeneous etching solution, the corrosion loss of the substrate layer is set to M _b , and the first When the corrosion loss of one carrier layer is set to _Mc1 and the corrosion loss of the second carrier layer is set to _Mc2 , the substrate layer, the first carrier layer, and the second carrier layer satisfy M _b / The relationship between M _c1 ≦0.9 and M _b /M _{c2 ≦0.9.} A metal mask is formed by using the cladding plate for metal masks described in any one of items 1 to 4 of the scope of patent application, and The iron-based alloy constituting the base material layer is included. A metal mask is formed by using the cladding plate for metal masks described in any one of items 1 to 4 of the scope of patent application, and It includes: a first metal layer including the iron-based alloy constituting the base layer; and a second metal layer including the metal constituting the first carrier layer, and the metal mask is the first metal The layer is joined with the second metal layer. A metal mask is formed by using the cladding sheet for metal masks as described in item 3 or item 4 of the scope of patent application, and It includes: a first metal layer including the iron-based alloy constituting the base layer; a second metal layer including the metal constituting the first carrier layer; and a third metal layer including the second carrier And the metal mask is formed by sequentially joining the second metal layer, the first metal layer, and the third metal layer.

Images