TWI766791B - 雙面冷卻功率封裝結構 - Google Patents

雙面冷卻功率封裝結構 Download PDF

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TWI766791B
TWI766791B TW110129753A TW110129753A TWI766791B TW I766791 B TWI766791 B TW I766791B TW 110129753 A TW110129753 A TW 110129753A TW 110129753 A TW110129753 A TW 110129753A TW I766791 B TWI766791 B TW I766791B
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double
cooling
cooling substrate
package structure
power package
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TW202213656A (zh
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資重興
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敦南科技股份有限公司
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Abstract

一種雙面冷卻功率封裝結構包括第一冷卻基板、第二冷卻基板、至少一半導體晶片以及多個第一導電帶。第二冷卻基板與第一冷卻基板相對設置。所述半導體晶片接合在第一冷卻基板和第二冷卻基板其中一個上。所述第一導電帶設置於第一冷卻基板與第二冷卻基板之間，其中每個第一導電帶包括第一部分、第二部分以及連接第一部分和第二部分的可彎折部分。所述可彎折部分於所述第一部分的邊緣形成閉環。第一部分和第二部分中的一個與所述半導體晶片直接接觸，而第一部分和第二部分中的另一個遠離所述半導體晶片延伸。

Description

雙面冷卻功率封裝結構
本發明是有關於一種功率封裝結構，且特別是有關於一種雙面冷卻功率封裝結構。
功率元件一般在操作期間會產生大量的熱，因此散熱問題是待改善的主要議題之一。
近來，一種雙面冷卻功率封裝結構已被廣泛應用為有效的散熱器(heat sink)。例如，在功率元件的兩面上設置兩個散熱器，因此能提高散熱效率。
然而，如果雙面冷卻功率封裝結構因為熱膨脹係數的差異而遭遇壓應力以及/或是熱應力，則其可能會被破裂或損壞。
本發明提供一種雙面冷卻功率封裝結構，能解決壓應力以及/或是熱應力所導致的問題。
本發明的雙面冷卻功率封裝結構包括第一冷卻基板、第二冷卻基板、至少一半導體晶片以及多個第一導電帶。所述第二 冷卻基板與所述第一冷卻基板相對設置。所述半導體晶片接合在第一冷卻基板和第二冷卻基板其中一個上。所述第一導電帶設置於第一冷卻基板與第二冷卻基板之間，其中每個所述第一導電帶包括第一部分、第二部分以及連接所述第一部分和所述第二部分的可彎折部分(bendable portion)。所述可彎折部分於所述第一部分的邊緣形成閉環(closed loop)。第一部分和第二部分中的一個與所述半導體晶片直接接觸，而第一部分和第二部分中的另一個遠離所述半導體晶片延伸。
在本發明的一實施例中，所述多個第一導電帶是不連續結構。
在本發明的一實施例中，所述第一導電帶是連續結構。
在本發明的一實施例中，所述第一部分與所述半導體晶片直接接觸。
在本發明的一實施例中，所述第一部分經由第一焊料耦接至所述半導體晶片。
在本發明的一實施例中，所述半導體晶片接合在所述第一冷卻基板上，且每個第一導電帶的所述第二部分與所述第二冷卻基板直接接觸。
在本發明的一實施例中，所述半導體晶片接合在所述第一冷卻基板上，且每個第一導電帶的所述第二部分經由第二焊料耦接至所述第二冷卻基板。
在本發明的一實施例中，所述第二部分與所述半導體晶 片直接接觸。
在本發明的一實施例中，所述第二部分經由第一焊料耦接至所述半導體晶片。
在本發明的一實施例中，所述半導體晶片接合在所述第一冷卻基板上，且每個第一導電帶的所述第一部分與所述第二冷卻基板直接接觸。
在本發明的一實施例中，所述半導體晶片接合在所述第一冷卻基板上，且每個第一導電帶的所述第二部分經由第二焊料耦接至所述第二冷卻基板。
在本發明的一實施例中，所述封裝結構更包括多個金屬預成型體設置於所述第二冷卻基板與所述半導體晶片之間，其中所述金屬預成型體與所述第二冷卻基板直接接觸，且第一部分和第二部分中的一個設置在所述金屬預成型體與所述半導體晶片之間。
在本發明的一實施例中，所述封裝結構更包括至少一第二導電帶設置於所述第一冷卻基板與所述第二冷卻基板之間，其中所述第二導電帶具有與每個所述第一導電帶相同的形狀，且所述第二導電帶不接觸所述半導體晶片。
在本發明的一實施例中，所述第二導電帶與所述第一導電帶是不連續結構。
在本發明的一實施例中，所述第二導電帶與所述第一導電帶是連續結構。
在本發明的一實施例中，所述第一冷卻基板與所述第二冷卻基板是直接覆銅陶瓷(DBC)基板。
基於上述，本發明在雙面冷卻功率封裝結構中提供了一種特定的導電帶。具體而言，所述導電帶的可彎折部分在熱壓縮過程中會發生彈性變形，因此能吸收不同材料之間的熱壓縮與熱應力所產生的應力。因此，可改善封裝結構和半導體晶片的堅固性(robustness)。此外，本發明在製程成本(僅需一次或兩次迴焊步驟)和理想的散熱性能方面也具有優勢。
為使前述內容更易於理解，以下結合附圖對數個實施例進行詳細說明。
所附圖式提供對本發明的進一步理解，並且被併入並構成說明書的一部分。所附圖式顯示了本發明的示例性實施例並且與描述一起用於解釋本發明的原理。
10、20、30、40、50、60、70、80、90:雙面冷卻功率封裝結構
100:第一冷卻基板
100a、102a:上金屬層
100b、102b:下金屬層
100c、102c:介電板
102:第二冷卻基板
104:半導體晶片
106:第一導電帶
106a、400a、800a:第一部分
106b、400b、800b:第二部分
106c、400c、800c:可彎折部分
108、200、602、700、802、902:焊料
400、800:第二導電帶
600、900:金屬預成型體
E:邊緣
h:高度差
t1、t2:厚度
圖1A是依照本發明的第一實施例的一種雙面冷卻功率封裝結構的側視示意圖。
圖1B是圖1A的雙面冷卻功率封裝結構中的第一導電帶的立體圖。
圖2是依照本發明的第二實施例的一種雙面冷卻功率封裝結構的側視示意圖。
圖3是依照本發明的第三實施例的一種雙面冷卻功率封裝結構的側視示意圖。
圖4是依照本發明的第四實施例的一種雙面冷卻功率封裝結構的側視示意圖。
圖5是依照本發明的第五實施例的一種雙面冷卻功率封裝結構的側視示意圖。
圖6是依照本發明的第六實施例的一種雙面冷卻功率封裝結構的側視示意圖。
圖7是依照本發明的第七實施例的一種雙面冷卻功率封裝結構的側視示意圖。
圖8是依照本發明的第八實施例的一種雙面冷卻功率封裝結構的側視示意圖。
圖9是依照本發明的第九實施例的一種雙面冷卻功率封裝結構的側視示意圖。
以下將參考實施例和圖式來充分理解本發明。然而，本發明仍可以按照多種不同形式來實施，且不應被解釋為限於下文描述的實施例。在圖式中，為了清楚起見，元件及其相對尺寸可能不按比例縮放。為便於理解，以下實施例中相同的元件可採用相同的元件符號表示。
圖1A是依照本發明的第一實施例的一種雙面冷卻功率 封裝結構的側視示意圖。圖1B是圖1A的雙面冷卻功率封裝結構中的第一導電帶的立體圖。
請參照圖1A與圖1B，第一實施例的雙面冷卻功率封裝結構10包括第一冷卻基板100、第二冷卻基板102、至少一半導體晶片104以及多個第一導電帶106。所述第二冷卻基板102與所述第一冷卻基板100相對設置。在本實施例中，所述第一冷卻基板100與所述第二冷卻基板102例如是直接覆銅陶瓷(DBC)基板。第一冷卻基板100至少包括上金屬層100a、下金屬層100b以及位在上金屬層100a與下金屬層100b之間的介電板100c。第二冷卻基板102至少包括上金屬層102a、下金屬層102b以及位在上金屬層102a與下金屬層102b之間的介電板102c。所述半導體晶片104經由一焊料108接合在第一冷卻基板100上，但本發明並不限於此；在另一實施例中，半導體晶片104是通過超音波壓合(ultrasonic compression，UC)接合在第一冷卻基板100上。所述半導體晶片104例如是IGBT、MOSFET、FRD(fast recovery diode)或寬帶隙晶片。所述第一導電帶106設置於第一冷卻基板100與第二冷卻基板102之間，其中每個第一導電帶106包括第一部分106a、第二部分106b以及連接所述第一部分106a和所述第二部分106b的可彎折部分(bendable portion)106c。第一導電帶106以與圖1A-1B所示的相同幾何形狀沿Y方向延伸。第一導電帶106的材料例如銅。具體而言，第一實施例中有兩條第一導電帶106，且為連續結構，其中連接部是其第二部分106b，而且由於採用連 續結構，預期可進一步提高所述雙面冷卻功率封裝結構10的電流量(current capacity)和熱容量(thermal capacity)。所述可彎折部分106c於第一部分106a的邊緣E形成閉環(closed loop)，且可彎折部分106c為可彈性變形的結構，因此當雙面冷卻功率封裝結構10受到熱膨脹或壓縮應力的影響時，可吸收應力或壓力。在本實施例中，所述第一部分106a通過UC接合與半導體晶片104直接接觸，但本發明並不限於此；在另一實施例中，第一部分106a可通過焊料(未繪示)接合至半導體晶片104。所述第二部分106b遠離所述半導體晶片104延伸，且每個第一導電帶106的第二部分106b直接接觸第二冷卻基板102。由於第一導電帶106與下金屬層102b的材料可相同，所以所述第二部分106b與第二冷卻基板102的接合方法包括UC接合或雷射焊接等。然而本發明並不限於此；在另一實施例中，第二部分106b可通過焊料(未繪示)接合至第二冷卻基板102。另外，每個第一導電帶106的尺寸可根據需求改變；例如，第一導電帶106的厚度t1、半導體晶片104的厚度t2以及第二部分106b和第一部分106a之間的高度差h可以根據需要而改變。
圖2是依照本發明的第二實施例的一種雙面冷卻功率封裝結構的側視示意圖，其中使用與第一實施例相同的元件符號來表示相同或近似的構件。相同或近似的構件內容也可參照上述第一實施例的相關說明，不再贅述。
請參照圖2，第一與第二實施例的差異在於半導體晶片 104與每個第一導電帶106的第一部分106a之間設置有一個額外的焊料200。如果焊料200的成分與焊料108的成分相同，則第二實施例的雙面冷卻功率封裝結構20的製造過程中可以進行單一迴焊製程(reflow process)。舉例來說，先將焊料108施加在第一冷卻基板100上，再將半導體晶片104附著在焊料108上，然後將額外的焊料200施加在第一部分106a上，層壓所述第一冷卻基板100和所述第二冷卻基板102，以將半導體晶片104接合到焊料200，並且執行上述單一迴焊製程。在另一實施例中，如果焊料200的成分與焊料108的成分不同，則焊料108可以具有比焊料200更高的熔點，並且可以在製造第二實施例的雙面冷卻功率封裝結構20的過程中進行二次迴焊製程。舉例來說，先將焊料108施加在第一冷卻基板100上，再將半導體晶片104附著在焊料108上，然後進行第一迴焊製程，並於第一迴焊製程後將額外的焊料200施加在第一部分106a上，再層壓所述第一冷卻基板100和所述第二冷卻基板102，以將半導體晶片104接合到焊料200，並執行第二迴焊製程。由於焊料108的熔點高於焊料200的熔點，因此焊料108在第二迴焊製程期間不會熔化變形。
圖3是依照本發明的第三實施例的一種雙面冷卻功率封裝結構的側視示意圖，其中使用與第一實施例相同的元件符號來表示相同或近似的構件。相同或近似的構件內容也可參照上述第一實施例的相關說明，不再贅述。
請參照圖3，第三實施例的雙面冷卻功率封裝結構30中 的第一導電帶106是不連續結構，其中不同的第一導電帶106的第二部分106b是分開的。因此，根據電路的容量，半導體晶片104以及第一導電帶106的位置可以改變。在另一實施例中，雙面冷卻功率封裝結構30中的第一導電帶106可以是連續結構和不連續結構的組合。
圖4是依照本發明的第四實施例的一種雙面冷卻功率封裝結構的側視示意圖，其中使用與第一實施例相同的元件符號來表示相同或近似的構件。相同或近似的構件內容也可參照上述第一實施例的相關說明，不再贅述。
請參照圖4，第一與第四實施例的差異在於第四實施例的雙面冷卻功率封裝結構40中還有第二導電帶400。第二導電帶400設置於所述第一冷卻基板100與所述第二冷卻基板102之間，其中所述第二導電帶400具有與每個第一導電帶106相同的形狀，但尺寸上可能有一點差異。舉例來說，第二導電帶400包括第一部分400a、第二部分400b以及連接第一部分400a和第二部分400b的可彎折部分400c，其中第一部分400a與第一冷卻基板100直接接觸，而第二部分400b與第二冷卻基板102直接接觸。所述第二導電帶400不接觸半導體晶片104，因此根據電路或拓撲的設計，其可為電流和熱量提供額外的路徑。在本實施例中，所述第二導電帶400與所述第一導電帶106是連續結構，其中第二部分400b連接到一個第二部分106b。
圖5是依照本發明的第五實施例的一種雙面冷卻功率封 裝結構的側視示意圖，其中使用與第四實施例相同的元件符號來表示相同或近似的構件。相同或近似的構件內容也可參照上述第四實施例的相關說明，不再贅述。
請參照圖5，第五與第四實施例的差異在於第五實施例的雙面冷卻功率封裝結構50中的第二導電帶400與第一導電帶106是不連續結構，其中第二部分106b和400b是分開的。因此，根據電路的容量，可以改變半導體晶片104的位置以及第一導電帶106與第二導電帶400的位置。
圖6是依照本發明的第六實施例的一種雙面冷卻功率封裝結構的側視示意圖，其中使用與第一實施例相同的元件符號來表示相同或近似的構件。相同或近似的構件內容也可參照上述第一實施例的相關說明，不再贅述。
請參照圖6，第一與第六實施例的差異在於第六實施例的雙面冷卻功率封裝結構60中還有多個金屬預成型體600。所述金屬預成型體600設置於第二冷卻基板102與半導體晶片104之間，且金屬預成型體600較佳是對應形成於每個半導體晶片104的中央。所述金屬預成型體600例如通過雷射焊接或UC接合(也稱為超音波焊接)如超音波熱壓接合(thermal ultrasonic compression)，與第二冷卻基板102的下金屬層102b直接接觸。此外，第一導電帶106的第一部分106a設置在金屬預成型體600與半導體晶片104之間，而第一部分106a可通過焊料602接合至金屬預成型體600。在一實施例中，金屬預成型體600的厚度小於或等於第二部分 106b和第一部分106a之間的高度差。由於金屬預成型體600例如由具有優異熱傳導性的銅製得，因此半導體晶片104產生的熱可通過金屬預成型體600有效地傳遞至第二冷卻基板102。
圖7是依照本發明的第七實施例的一種雙面冷卻功率封裝結構的側視示意圖，其中使用與第一實施例相同的元件符號來表示相同或近似的構件。相同或近似的構件內容也可參照上述第一實施例的相關說明，不再贅述。
請參照圖7，第七實施例的雙面冷卻功率封裝結構70同樣包括第一冷卻基板100、第二冷卻基板102、至少一半導體晶片104以及多個第一導電帶106。然而，第一導電帶106的第二部分106b通過焊料700耦接至半導體晶片104，但本發明不限於此。在另一實施例中，可通過超音波壓合(UC)接合，將半導體晶片104接合在第二部分106b上。第一導電帶106的第一部分106a則與第二冷卻基板102直接接觸。由於第一導電帶106和下金屬層102b的材料可以相同，因此第一部分106a與第二冷卻基板102的接合方法包括UC接合或雷射焊接等。然而本發明並不限於此；在另一實施例中，第一部分106a可通過其他焊料(未繪示)接合至第二冷卻基板102。
圖8是依照本發明的第八實施例的一種雙面冷卻功率封裝結構的側視示意圖，其中使用與第七實施例相同的元件符號來表示相同或近似的構件。相同或近似的構件內容也可參照上述第七實施例的相關說明，不再贅述。
請參照圖8，第八與第七實施例的差異在於第八實施例的雙面冷卻功率封裝結構80中還包括第二導電帶800。第二導電帶800設置於所述第一冷卻基板100與所述第二冷卻基板102之間，其中所述第二導電帶800具有與第一導電帶106相同的形狀，但尺寸上可能有一點差異。舉例來說，第二導電帶800包括第一部分800a、第二部分800b以及連接第一部分800a和第二部分800b的可彎折部分800c。第一部分106a與800a可通過焊料802接合至第二冷卻基板102。第二導電帶800不接觸半導體晶片104，因此根據電路或拓撲的設計，其可為電流和熱量提供額外的路徑。在本實施例中，所述第二導電帶800與所述第一導電帶106是不連續結構，其中第二部分800b與106b是分開的。或者，第二導電帶800與第一導電帶106是連續結構，或是連續結構和不連續結構的組合。
圖9是依照本發明的第九實施例的一種雙面冷卻功率封裝結構的側視示意圖，其中使用與第七實施例相同的元件符號來表示相同或近似的構件。相同或近似的構件內容也可參照上述第七實施例的相關說明，不再贅述。
請參照圖9，第九與第七實施例的差異在於第九實施例的雙面冷卻功率封裝結構90中還有多個金屬預成型體900。所述金屬預成型體900設置於第二冷卻基板102與半導體晶片104之間，其中金屬預成型體900與第二冷卻基板102的下金屬層102b直接接觸。所述金屬預成型體9可通過UC接合或雷射焊接等形成。此 外，第一導電帶106的第二部分106b設置在金屬預成型體900與半導體晶片104之間，而第二部分106b可通過焊料902接合至金屬預成型體900。由於金屬預成型體900例如由具有優異熱傳導性的銅製得，因此半導體晶片104產生的熱可通過金屬預成型體900有效地傳遞至第二冷卻基板102，進而有利於雙面冷卻功率封裝結構90的散熱。
綜上所述，根據本發明的雙面冷卻功率封裝結構可以通過特定的導電帶吸收不同材料之間的熱壓縮與熱應力所產生的應力。具體而言，導電帶的可彎折部分在熱壓縮過程中會發生彈性變形，從而提高封裝和半導體晶片的堅固性。此外，本發明在製程成本(僅需一次或兩次迴焊步驟)方面以及通過導電帶的理想散熱性能方面也具有優勢。
雖然本發明已以實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明的精神和範圍內，當可作些許的更動與潤飾，故本發明的保護範圍當視後附的申請專利範圍所界定者為準。
10:雙面冷卻功率封裝結構
100:第一冷卻基板
100a、102a:上金屬層
100b、102b:下金屬層
100c、102c:介電板
102:第二冷卻基板
104:半導體晶片
106:第一導電帶
106a:第一部分
106b:第二部分
106c:可彎折部分
108:焊料
t2:厚度

Claims (16)

  1. 一種雙面冷卻功率封裝結構，包括：第一冷卻基板；第二冷卻基板，與所述第一冷卻基板相對設置；至少一半導體晶片，接合在所述第一冷卻基板和所述第二冷卻基板其中一個上；以及多個第一導電帶，設置於所述第一冷卻基板與所述第二冷卻基板之間，其中每個所述第一導電帶包括第一部分、第二部分以及連接所述第一部分和所述第二部分的可彎折部分，所述可彎折部分於所述第一部分的邊緣形成閉環，所述第一部分和所述第二部分中的一個與所述半導體晶片直接接觸，而所述第一部分和所述第二部分中的另一個遠離所述半導體晶片延伸。
  2. 如請求項1所述的雙面冷卻功率封裝結構，其中所述多個第一導電帶是不連續結構。
  3. 如請求項1所述的雙面冷卻功率封裝結構，其中所述第一導電帶是連續結構。
  4. 如請求項1所述的雙面冷卻功率封裝結構，其中所述第一部分與所述半導體晶片直接接觸。
  5. 如請求項1所述的雙面冷卻功率封裝結構，其中所述第一部分經由第一焊料耦接至所述半導體晶片。
  6. 如請求項1所述的雙面冷卻功率封裝結構，其中所述半導體晶片接合在所述第一冷卻基板上，且每個所述第一導電帶的所述第二部分與所述第二冷卻基板直接接觸。
  7. 如請求項1所述的雙面冷卻功率封裝結構，其中所述半導體晶片接合在所述第一冷卻基板上，且每個所述第一導電帶的所述第二部分經由第二焊料耦接至所述第二冷卻基板。
  8. 如請求項1所述的雙面冷卻功率封裝結構，其中所述第二部分與所述半導體晶片直接接觸。
  9. 如請求項1所述的雙面冷卻功率封裝結構，其中所述第二部分經由第一焊料耦接至所述半導體晶片。
  10. 如請求項1所述的雙面冷卻功率封裝結構，其中所述半導體晶片接合在所述第一冷卻基板上，且每個所述第一導電帶的所述第一部分與所述第二冷卻基板直接接觸。
  11. 如請求項1所述的雙面冷卻功率封裝結構，其中所述半導體晶片接合在所述第一冷卻基板上，且每個所述第一導電帶的所述第二部分經由第二焊料耦接至所述第二冷卻基板。
  12. 如請求項1所述的雙面冷卻功率封裝結構，更包括多個金屬預成型體，設置於所述第二冷卻基板與所述半導體晶片之間，其中所述金屬預成型體與所述第二冷卻基板直接接觸，且所述第一部分和所述第二部分中的所述一個設置在所述金屬預成型體與所述半導體晶片之間。
  13. 如請求項1所述的雙面冷卻功率封裝結構，更包括至少一第二導電帶，設置於所述第一冷卻基板與所述第二冷卻基板之間，其中所述第二導電帶具有與每個所述第一導電帶相同的形狀，且所述第二導電帶不接觸所述半導體晶片。
  14. 如請求項13所述的雙面冷卻功率封裝結構，其中所述第二導電帶與所述第一導電帶是不連續結構。
  15. 如請求項13所述的雙面冷卻功率封裝結構，其中所述第二導電帶與所述第一導電帶是連續結構。
  16. 如請求項1所述的雙面冷卻功率封裝結構，其中所述第一冷卻基板與所述第二冷卻基板包括直接覆銅陶瓷(DBC)基板。
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