TWI762931B - 基板背側保護技術 - Google Patents

基板背側保護技術 Download PDF

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Publication number
TWI762931B
TWI762931B TW109116429A TW109116429A TWI762931B TW I762931 B TWI762931 B TW I762931B TW 109116429 A TW109116429 A TW 109116429A TW 109116429 A TW109116429 A TW 109116429A TW I762931 B TWI762931 B TW I762931B
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TW
Taiwan
Prior art keywords
substrate
base
support
reaction chamber
support portion
Prior art date
Application number
TW109116429A
Other languages
English (en)
Chinese (zh)
Other versions
TW202101544A (zh
Inventor
尼可拉斯 荷蒙
朱哈娜 寇斯特摩
馬可 普達斯
Original Assignee
芬蘭商皮寇桑公司
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Publication date
Application filed by 芬蘭商皮寇桑公司 filed Critical 芬蘭商皮寇桑公司
Publication of TW202101544A publication Critical patent/TW202101544A/zh
Application granted granted Critical
Publication of TWI762931B publication Critical patent/TWI762931B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3306—Horizontal transfer of a single workpiece
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45519—Inert gas curtains
    • C23C16/45521—Inert gas curtains the gas, other than thermal contact gas, being introduced the rear of the substrate to flow around its periphery
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0462—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7612—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
TW109116429A 2019-06-25 2020-05-18 基板背側保護技術 TWI762931B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
WOPCT/FI2019/050492 2019-06-25
PCT/FI2019/050492 WO2020260742A1 (en) 2019-06-25 2019-06-25 Substrate backside protection

Publications (2)

Publication Number Publication Date
TW202101544A TW202101544A (zh) 2021-01-01
TWI762931B true TWI762931B (zh) 2022-05-01

Family

ID=74060031

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109116429A TWI762931B (zh) 2019-06-25 2020-05-18 基板背側保護技術

Country Status (6)

Country Link
EP (1) EP3990680A4 (https=)
JP (2) JP7300527B2 (https=)
KR (1) KR102412341B1 (https=)
CN (1) CN114026268A (https=)
TW (1) TWI762931B (https=)
WO (1) WO2020260742A1 (https=)

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CN112853316B (zh) * 2020-12-31 2023-03-14 拓荆科技股份有限公司 镀膜装置及其承载座
FI130020B (en) 2021-05-10 2022-12-30 Picosun Oy Substrate processing apparatus and method
FI130543B (en) * 2021-08-13 2023-11-08 Beneq Oy An atomic layer deposition apparatus and method

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TW201839165A (zh) * 2017-04-10 2018-11-01 芬蘭商皮寇桑公司 均勻沉積技術

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JPH0927538A (ja) * 1995-07-13 1997-01-28 Sharp Corp 四隅が支持されて持ち上げられた基板のたわみ軽減方法および枚葉式基板処理装置
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TW201542861A (zh) * 2014-01-21 2015-11-16 應用材料股份有限公司 允許低壓汰換工具之原子層沉積處理腔室及具有其之處理系統
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TW201839165A (zh) * 2017-04-10 2018-11-01 芬蘭商皮寇桑公司 均勻沉積技術

Also Published As

Publication number Publication date
JP2022531622A (ja) 2022-07-07
KR102412341B1 (ko) 2022-06-23
KR20220010073A (ko) 2022-01-25
EP3990680A4 (en) 2023-01-11
EP3990680A1 (en) 2022-05-04
WO2020260742A1 (en) 2020-12-30
CN114026268A (zh) 2022-02-08
JP2023085420A (ja) 2023-06-20
JP7300527B2 (ja) 2023-06-29
TW202101544A (zh) 2021-01-01

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