JP2022531622A5 - - Google Patents

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Publication number
JP2022531622A5
JP2022531622A5 JP2021576430A JP2021576430A JP2022531622A5 JP 2022531622 A5 JP2022531622 A5 JP 2022531622A5 JP 2021576430 A JP2021576430 A JP 2021576430A JP 2021576430 A JP2021576430 A JP 2021576430A JP 2022531622 A5 JP2022531622 A5 JP 2022531622A5
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JP
Japan
Prior art keywords
substrate
support
reaction chamber
susceptor
flow
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2021576430A
Other languages
English (en)
Japanese (ja)
Other versions
JP2022531622A (ja
JP7300527B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/FI2019/050492 external-priority patent/WO2020260742A1/en
Publication of JP2022531622A publication Critical patent/JP2022531622A/ja
Publication of JP2022531622A5 publication Critical patent/JP2022531622A5/ja
Priority to JP2023059904A priority Critical patent/JP2023085420A/ja
Application granted granted Critical
Publication of JP7300527B2 publication Critical patent/JP7300527B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2021576430A 2019-06-25 2019-06-25 基板の裏面保護 Active JP7300527B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2023059904A JP2023085420A (ja) 2019-06-25 2023-04-03 基板の裏面保護

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/FI2019/050492 WO2020260742A1 (en) 2019-06-25 2019-06-25 Substrate backside protection

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2023059904A Division JP2023085420A (ja) 2019-06-25 2023-04-03 基板の裏面保護

Publications (3)

Publication Number Publication Date
JP2022531622A JP2022531622A (ja) 2022-07-07
JP2022531622A5 true JP2022531622A5 (https=) 2022-11-14
JP7300527B2 JP7300527B2 (ja) 2023-06-29

Family

ID=74060031

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2021576430A Active JP7300527B2 (ja) 2019-06-25 2019-06-25 基板の裏面保護
JP2023059904A Pending JP2023085420A (ja) 2019-06-25 2023-04-03 基板の裏面保護

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2023059904A Pending JP2023085420A (ja) 2019-06-25 2023-04-03 基板の裏面保護

Country Status (6)

Country Link
EP (1) EP3990680A4 (https=)
JP (2) JP7300527B2 (https=)
KR (1) KR102412341B1 (https=)
CN (1) CN114026268A (https=)
TW (1) TWI762931B (https=)
WO (1) WO2020260742A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112853316B (zh) * 2020-12-31 2023-03-14 拓荆科技股份有限公司 镀膜装置及其承载座
FI130020B (en) 2021-05-10 2022-12-30 Picosun Oy Substrate processing apparatus and method
FI130543B (en) * 2021-08-13 2023-11-08 Beneq Oy An atomic layer deposition apparatus and method

Family Cites Families (33)

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JPH08191097A (ja) * 1995-01-11 1996-07-23 Touyoko Kagaku Kk 高速熱処理装置
JPH0927538A (ja) * 1995-07-13 1997-01-28 Sharp Corp 四隅が支持されて持ち上げられた基板のたわみ軽減方法および枚葉式基板処理装置
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JP4200844B2 (ja) * 2003-08-11 2008-12-24 東京エレクトロン株式会社 熱処理装置
KR101196197B1 (ko) * 2004-01-20 2012-11-02 주성엔지니어링(주) 기판 지지부재, 이를 포함하는 증착 장치 및 이를 이용한기판의 이송 방법
JP2006080148A (ja) * 2004-09-07 2006-03-23 Hitachi Kokusai Electric Inc 基板処理装置
US8211235B2 (en) * 2005-03-04 2012-07-03 Picosun Oy Apparatuses and methods for deposition of material on surfaces
JP2008198739A (ja) * 2007-02-09 2008-08-28 Tokyo Electron Ltd 載置台構造、これを用いた処理装置及びこの装置の使用方法
KR20080092766A (ko) * 2007-04-13 2008-10-16 (주)소슬 기판 지지대 및 이를 구비하는 플라즈마 처리 장치
JP5195370B2 (ja) * 2008-12-05 2013-05-08 株式会社Ｓｕｍｃｏ エピタキシャルウェーハの製造方法
KR101536257B1 (ko) * 2009-07-22 2015-07-13 한국에이에스엠지니텍 주식회사 수평 흐름 증착 장치 및 이를 이용한 증착 방법
TWI563589B (en) * 2009-11-27 2016-12-21 Jusung Eng Co Ltd Tray, substrate processing apparatus using the same, and manufacturing method of tray
JP5604907B2 (ja) * 2010-02-25 2014-10-15 信越半導体株式会社 気相成長用半導体基板支持サセプタおよびエピタキシャルウェーハ製造装置およびエピタキシャルウェーハの製造方法
EP2481832A1 (en) * 2011-01-31 2012-08-01 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Apparatus for atomic layer deposition
CN103930985B (zh) * 2011-10-13 2017-03-29 株式会社爱发科 真空处理装置
RU2620230C2 (ru) * 2012-11-23 2017-05-23 Пикосан Ой Способ загрузки подложки в реактор асо
KR20160024882A (ko) * 2013-06-27 2016-03-07 피코순 오와이 원자층 증착 반응기 내 기판 웹 트랙의 형성
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WO2015112467A1 (en) * 2014-01-21 2015-07-30 Applied Materials, Inc. Atomic layer deposition processing chamber permitting low-pressure tool replacement
KR101809141B1 (ko) * 2014-05-29 2018-01-19 에이피시스템 주식회사 히터 블록 및 기판 열처리 장치
KR101557590B1 (ko) 2014-08-19 2015-10-05 주식회사 엘지실트론 에피택셜 성장장치 및 이를 이용한 에피택셜 성장방법
CN107112267B (zh) * 2015-01-12 2020-09-22 应用材料公司 用于基板背侧变色控制的支撑组件
JP6054470B2 (ja) * 2015-05-26 2016-12-27 株式会社日本製鋼所 原子層成長装置
JP6539929B2 (ja) * 2015-12-21 2019-07-10 昭和電工株式会社 ウェハ支持機構、化学気相成長装置およびエピタキシャルウェハの製造方法
IT201600099783A1 (it) * 2016-10-05 2018-04-05 Lpe Spa Reattore per deposizione epitassiale con riflettore esterno alla camera di reazione e metodo di raffreddamento di un suscettore e di substrati
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WO2018189413A1 (en) * 2017-04-10 2018-10-18 Picosun Oy Uniform deposition

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